CN105281189A - Wide temperature range laser based on hexagon plate strip structure - Google Patents
Wide temperature range laser based on hexagon plate strip structure Download PDFInfo
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- CN105281189A CN105281189A CN201510837290.XA CN201510837290A CN105281189A CN 105281189 A CN105281189 A CN 105281189A CN 201510837290 A CN201510837290 A CN 201510837290A CN 105281189 A CN105281189 A CN 105281189A
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Abstract
A wide temperature range laser based on hexagon plate strip structure comprises a large power laser diode light source, two orthogonally placed porro prisms, a laser gain medium, a polarization beam splitter, 0.57 wave sheet and 1/4 wave sheet, wherein the laser gain medium is a hexagon plate strip structure formed by a rectangle together with an isosceles trapezoid; the large power laser diode light source comprises a plurality of conduction-cooled laser diode arrays; the orthogonally placed porro prisms, the laser gain medium, the polarization beam splitter, the 0.57 wave sheet and the 1/4 wave sheet are used to construct a resonant cavity for producing laser; and the 0.57 wave sheet and the 1/4 wave sheet are zero-order wave sheets outputting laser with corresponding wavelengths. According to the invention, the structure is compact; the performance is stable; and the wide temperature range laser can work stably under the condition of no cooling with the temperature range of minus 30 to plus 70 DEG C.
Description
Technical field
The present invention relates to laser, particularly a kind of wide temperature laser based on hexagon battened construction, this laser can in-30-+70 DEG C of temperature range Non-water-cooled condition under steady operation.
Background technology
Generally, laser is by water cooling plant temperature control, but water cooling plant is bulky, and power consumption is high, and the laser obviously for some outdoors is particularly inconvenient.China is vast in territory, and the laser of some special purposes requires to adapt to different environmental changes, and this just proposes new requirement to the design of laser, these require to include easy to carry, low in energy consumption, conversion efficiency is high and temperature resistance and antidetonation ability is strong.The laser of the wide temperature work of Non-water-cooled has great importance for the demand of reality.
Along with the development of semiconductor laser technique, laser diode is extensively used as the pumping source of solid-state laser with the advantage of its uniqueness.The centre wavelength that laser diode is launched can be drifted about along with temperature change, and the coefficient of temperature drift is generally 0.3nm/ DEG C.Therefore will in Non-water-cooled situation, it is comparatively difficult that the laser of laser diode pumping realizes wide temperature work, general solution includes the emission wavelength of insertosome Bragg grating to laser diode and locks, the absorption path of TEC controlling temperature and increase pump light.The laser diode of insertosome Bragg grating is expensive, and can the temperature range of wavelength locking also limited; TEC temperature control will consume larger power, and this is not obviously desired by us; The method increasing the absorption path of pump light is then used to some extent in the laser of some end pumps, but the power output that the mode of employing end pump determines laser is limited.
Summary of the invention
The object of the invention is to the shortcoming that the power output temperature influence of all solid state laser overcoming existing laser diode pumping is large, a kind of wide temperature laser based on hexagon battened construction is provided, the compact conformation of this laser, stable performance, can in 100 DEG C of temperature ranges of-30-+70 DEG C steady operation.
Technical solution of the present invention is as follows:
Based on a wide temperature laser for hexagon battened construction, its feature is that its formation comprises the first Porro prism, 0.57 wave plate, polarization beam apparatus, quarter wave plate, gain medium, high power laser diode and the second Porro prism; The optical axis of the first described Porro prism is successively 0.57 wave plate, polarization beam apparatus, the quarter wave plate of same optical axis; Described gain medium is the hexagon battened construction synthesized by a rectangle and isosceles trapezoid, and two waists of isosceles trapezoid are Brewster angle with the angle of vibration light beam respectively; The second described Porro prism is zero degree with the angle of vibration light beam; Described high power laser diode is made up of the Laser diode array of several Conduction cooled, is arranged in lath side and an end face; 0.57 described wave plate and quarter wave plate are the zero-th order waveplates that Output of laser wavelength is corresponding.
Described high power laser diode is made up of the Laser diode array of Conduction cooled, and this array can be intervally arranged by the laser diode of one or more different emission and form.
Described gain medium is Nd:YAG, Nd:YVO of hexagon battened construction
4or the crystal of Yb:YAG or pottery, laser can at the inner multiple total reflection of lath in transmission in a zigzag.
Pockels cell is provided with between 0.57 described wave plate and polarization beam apparatus.
Compared with the prior art the present invention has following advantage:
1, laser diode does not have insertosome Bragg grating, and can the work of high conversion efficiency in wide temperature range, and fully can be absorbed by laser medium, and can avoid water-cooled and TEC refrigeration, structure is simple, is easy to carry.
2, the Porro prism polarization coupled output cavity of orthogonal placement is adopted, due to respectively in one direction can autoregistration, just can realize coupling output by a wave plate/polarizer combination, make laser structure simple, large variations in temperature is kept insensitive.
3, adopt the laser diode of several different wave length as pumping source, the emission spectra of pump light is wider, absorbs energy to temperature-insensitive, can weaken the impact of temperature drift.
4, adopt the battened construction of transmission in a zigzag, have good heat treatment, the output of laser has the advantage of high-peak power and high light beam quality.
5, the pump mode adopting profile pump and end pumping to combine, has enough spatial arrangement LD, can ensure large power output.
6, adopt the zero-th order waveplates corresponding with Output of laser wavelength, can ensure that laser coupling output rate is to the insensitivity of temperature.
Accompanying drawing explanation
Fig. 1 is the light path schematic diagram of the wide temperature laser embodiments 1-that the present invention is based on hexagon battened construction when operating without Q switching;
Fig. 2 is the arrangement schematic diagram in an array of the laser diode of ABC tri-kinds of emission wavelengths;
Fig. 3 is middle plate strip structure of the present invention and the laser schematic diagram at lath internal communication;
Light path schematic diagram when Fig. 4 is the present invention's wide wide temperature laser embodiments 2-Q switch operation based on hexagon battened construction;
Fig. 5 is under different pump absorption length, the relative adsorption efficiency variation with temperature curve chart of pump light.
In Fig. 1 and Fig. 4,1 is the first Porro prism, and 2 is 0.57 wave plates, and 3 is polarization beam apparatus, and 4 is quarter wave plates, and 5 is gain mediums, and 6 is high power laser diode, and 7 is second Porro prisms, and 8 is Pockels cells.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with drawings and Examples, the present invention will be further described, but should not limit the scope of the invention with this.
Embodiment 1
As shown in Figure 1, the present invention is based on the wide temperature laser embodiments 1 of hexagon battened construction, comprise the first Porro prism 1,0.57 wave plate 2, polarization beam apparatus 3, quarter wave plate 4, gain medium 5, high power laser diode 6 and the second Porro prism 7.Described high power laser diode 6 is made up of the laser diode of several Conduction cooled, is arranged in around laser medium for providing pump light; Described the first Porro prism 1,0.57 wave plate 2, polarization beam apparatus 3, quarter wave plate 4, gain medium 5 and the second Porro prism 7 are arranged in order and form polarization coupled output cavity, the output rating of resonant cavity can be changed, the first Porro prism 1 and the orthogonal placement of the second Porro prism 7 by rotating quarter wave plate; Described gain medium 5 is the Nd:YAG medium of hexagon battened construction, and the plane of incidence of optical axis and lath and the angle of exit facet are all Brewster angles; 0.57 described wave plate 2 and quarter wave plate 4 are the zero-th order waveplates that Output of laser wavelength is corresponding.
High power laser diode 6 pumping laser gain media 5, produces light in resonant cavity, and in chamber, light forms the linearly polarized light in horizontal direction (p direction) by polarization beam apparatus 3; After 0.57 wave plate 2 (this wave plate is for compensating the depolarization of the first Porro prism) and the first Porro prism 1, becoming the linearly polarized light of horizontal direction (p direction) and passing through polarization beam apparatus 3 again; After quarter wave plate 4, become elliptically polarized light; Through the reflection of laser medium 5 and the second Porro prism 7, become elliptically polarized light twice; Eventually pass polarization beam apparatus 3, the polarised light of vertical component (s direction) exports, and the polarised light (p direction) of horizontal component then continues to vibrate inside chamber.
Fig. 2 is the arrangement schematic diagram in an array of the laser diode of ABC tri-kinds of emission wavelengths.The width of emission spectra can be increased by the spectral component changing laser diode thus reduce temperature drift to the impact absorbed; The coefficient of deviation of the center wavelength with temperature of these laser diodes is less than 0.3nm/ DEG C, and can at the temperature range high light photoelectric transformation efficiency ground steady operation of-30-+70 DEG C.
Fig. 3 is the index path that battened construction and laser transmit in lath.The non-pumped side of lath plates the high-reflecting film of pump light, is beneficial to round trip and absorbs, and adopt the pump mode that profile pump and end pumping combine, pump light has enough absorption lengths.
The present invention is by increasing the absorption path of pump light and overcome laser diode the impact caused because of temperature drift.Fig. 5 is under different pump absorption length, the relative adsorption efficiency variation with temperature of pump light, the medium in calculating to be doping content be 0.1% Nd:YAG crystal.From figure, clearly can find out that absorption efficiency is very large with temperature fluctuation when absorption length only has 3mm; When absorption length reaches 46mm, absorption efficiency varies with temperature less, can both fully absorb at very large temperature range inside-pumping energy.
Embodiment 2
As shown in Figure 4, as seen from the figure, the present invention is based on the wide temperature laser embodiments 2 of hexagon battened construction, comprise the first Porro prism 1,0.57 wave plate 2, polarization beam apparatus 3, quarter wave plate 4, gain medium 5, high power laser diode 6, second Porro prism 7 and Pockels cell 8.Described the first Porro prism 1,0.57 wave plate 2, Pockels cell 8, polarization beam apparatus 3, quarter wave plate 4, gain medium 5 and the second Porro prism 7 are arranged in order and form polarization coupled output cavity, the output rating of resonant cavity can be changed, the first Porro prism 1 and the orthogonal placement of the second Porro prism 7 by rotating quarter wave plate; Described gain medium 5 is the Nd:YAG medium of hexagon battened construction, and the plane of incidence of optical axis and lath and the angle of exit facet are all Brewster angles; Described quarter wave plate 4 is coupling output wave plates, and 0.57 wave plate 2 is cut-off wave plates, and 0.57 wave plate 2 and quarter wave plate 4 are the zero-th order waveplates that Output of laser wavelength is corresponding; Q switching running is realized by Pockels cell 8, adopts voltage addition Q-switch.
First Porro prism 1,0.57 wave plate 2, Pockels cell 8 and polarization beam apparatus 3 form the reflecting wall of resonant cavity; Second Porro prism 7, gain medium 5, quarter wave plate 4 and polarization beam apparatus 3 form the output wall of resonant cavity.Before running up to maximum to the particle inverted population density in gain medium 5 after from pumping, not making alive on Pockels cell.When Pockels cell does not have making alive, in chamber, light there occurs upset by reflecting wall rear polarizer state, and the horizontal polarization light (p direction) originally through polarization beam apparatus 3 becomes orthogonal polarized light (s direction).So light is after reflecting wall, reflect resonant cavity by polarization beam apparatus 3, cavity loss is very big, and can not form vibration, Q switching is in closed condition.At certain moment t, the particle inverted population density in gain medium 3 runs up to maximum, now adds on Pockels cell
voltage.On Pockels cell during making alive, in chamber, light is not changed by reflecting wall rear polarizer state, originally enters output wall completely through the horizontal polarization light (p direction) of polarization beam apparatus 3 or horizontal polarization light.Horizontal polarization light becomes elliptically polarized light twice after exporting wall, the perpendicular polarisation components of elliptically polarized light exports after polarization beam apparatus 3, horizontal polarization part then continues to vibrate in chamber, at this time cavity loss sharply declines, Q switching is in opening, laser starts quick oscillation, and then produces tune Q giant pulse laser.The output rating of resonant cavity can be regulated by the quarter wave plate 4 exported in wall.
Experiment shows, compact conformation of the present invention, stable performance, can in 100 DEG C of temperature ranges of-30-+70 DEG C steady operation.
Claims (4)
1., based on a wide temperature laser for hexagon battened construction, be characterised in that its formation comprises the first Porro prism (1), 0.57 wave plate (2), polarization beam apparatus (3), quarter wave plate (4), gain medium (5), high power laser diode (6) and the second Porro prism (7); The optical axis of described the first Porro prism (1) is successively 0.57 wave plate (2), polarization beam apparatus (3), the quarter wave plate (4) of same optical axis; Described gain medium (5) is the hexagon battened construction synthesized by a rectangle and isosceles trapezoid, and two waists (5-4,5-6) of isosceles trapezoid are Brewster angle with the angle of vibration light beam respectively; Described the second Porro prism (7) is zero degree with the angle of vibration light beam; Described high power laser diode (6) is made up of the Laser diode array of several Conduction cooled, is arranged in a side (5-3) and an end face (5-2) of the hexagon battened construction of described gain medium (5); Described 0.57 wave plate (2) and quarter wave plate (4) are zero-th order waveplates corresponding to Output of laser wavelength.
2. the wide temperature laser based on hexagon battened construction according to claim 1, it is characterized in that: described high power laser diode (6) is made up of the Laser diode array of Conduction cooled, this array can be intervally arranged by the laser diode of one or more different emission and form, the coefficient of deviation of the center wavelength with temperature of described laser diode is less than 0.3nm/ DEG C, can have high light photoelectric transformation efficiency ground steady operation the temperature range of-30-+70 DEG C.
3. the wide temperature laser based on hexagon battened construction according to claim 1, is characterized in that: Nd:YAG, Nd:YVO that described gain medium (5) is hexagon battened construction
4or the crystal of Yb:YAG or pottery, laser can at the inner multiple total reflection of lath in transmission in a zigzag; The non-pumped side (5-1) of lath plates the high-reflecting film of pump light, is beneficial to round trip and absorbs, and adopt the pump mode that profile pump and end pumping combine, pump light has enough absorption lengths.
4. the wide temperature laser based on hexagon battened construction according to any one of claims 1 to 3, is characterized in that: between described 0.57 wave plate (2) and polarization beam apparatus (3), be provided with Pockels cell (8).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221832A (en) * | 2017-08-01 | 2017-09-29 | 南京先进激光技术研究院 | A kind of U-shaped cavity laser that can efficiently debug and its adjustment method |
| CN112490838A (en) * | 2020-11-30 | 2021-03-12 | 北京超快光子科技有限公司 | Regenerative amplification resonant cavity and laser system using same |
| CN112636156A (en) * | 2020-12-24 | 2021-04-09 | 北京遥测技术研究所 | Satellite-borne high-energy dual-wavelength all-solid-state pulse laser |
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| US20080080584A1 (en) * | 2006-09-29 | 2008-04-03 | Usa Of America As Represented By The Administrator Of The National Aeronautics & Space Adm. | Solid-state laser gain module |
| CN104917046A (en) * | 2015-06-04 | 2015-09-16 | 中国科学院上海光学精密机械研究所 | All-solid-state laser device operating in wide temperature range |
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Patent Citations (2)
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| US20080080584A1 (en) * | 2006-09-29 | 2008-04-03 | Usa Of America As Represented By The Administrator Of The National Aeronautics & Space Adm. | Solid-state laser gain module |
| CN104917046A (en) * | 2015-06-04 | 2015-09-16 | 中国科学院上海光学精密机械研究所 | All-solid-state laser device operating in wide temperature range |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107221832A (en) * | 2017-08-01 | 2017-09-29 | 南京先进激光技术研究院 | A kind of U-shaped cavity laser that can efficiently debug and its adjustment method |
| CN112490838A (en) * | 2020-11-30 | 2021-03-12 | 北京超快光子科技有限公司 | Regenerative amplification resonant cavity and laser system using same |
| CN112636156A (en) * | 2020-12-24 | 2021-04-09 | 北京遥测技术研究所 | Satellite-borne high-energy dual-wavelength all-solid-state pulse laser |
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Application publication date: 20160127 |