CN105262467B - The circuit and method of body bias - Google Patents
The circuit and method of body bias Download PDFInfo
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- CN105262467B CN105262467B CN201510404151.8A CN201510404151A CN105262467B CN 105262467 B CN105262467 B CN 105262467B CN 201510404151 A CN201510404151 A CN 201510404151A CN 105262467 B CN105262467 B CN 105262467B
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Abstract
Each exemplary embodiment, which is directed toward, to be reduced due to the method and circuit of conducting resistance change and signal attenuation in the transistor of bulk effect.In some embodiments, a kind of device includes transistor, is configured to provide data-signal from another of first in source electrode or grid into source electrode or grid in response to providing the control signal to grid.Body bias circuit is configured to, and the body end of transistor is biased based on the voltage of data-signal, to reduce the change of the conducting resistance shown by the first transistor.In one embodiment, which includes body-biased transistors and switch, and the grid of body-biased transistors is connected to protect body-biased transistors from the influence of static discharge (ESD) event.
Description
The application is to be connect for the part on April 18th, 2014, the U.S. Patent application of Application No. 14/256799 applying date
Continuous application, the U.S. Patent application require entitled " MOS Body Effect Compensation for a High-Speed
MOS Switch ", the applying date on December 19th, 2013 U.S. Provisional Patent Application 61/918529 rights and interests, the two all with
Combine in full herein.
Technical field
Each aspect of the present invention directing switch circuit, is specifically directed to the on-off circuit based on transistor.
Background technology
Transistor is used for various circuits and equipment, with the communication between the source electrode of transistor and drain electrode for data-signal
Switchable path is provided.The threshold voltage that transistor is switched to conducting state (low resistance) from off state (high resistance) is source
The function of polar body voltage, this is referred to as bulk effect.Due to the bulk effect, the resistance of transistor in the on-state (referred to as turns on
Resistance) it is different such as the different voltages of the data-signal to communicate between transistor source and drain electrode.Due to electric conduction
The change of resistance, the data-signal of the communication may be attenuated.
The content of the invention
Each exemplary embodiment, which is directed toward, to be reduced due to conducting resistance change in the transistor of bulk effect and signal attenuation
Method and circuit.In some embodiments, a kind of device includes transistor, and transistor has source electrode, drain electrode, grid and body
End.Transistor is configured to, and in response to providing the control signal to grid, is provided from first in source electrode or drain electrode to another
Data-signal.Body bias circuit is configured to, and the body end of transistor is biased based on the voltage of data-signal, to reduce data-signal
Decay.In one embodiment, which includes body-biased transistors and switch, and the grid of body-biased transistors is connected
To protect body-biased transistors from the influence of static discharge (ESD) event.
In one embodiment, first switch is connected in source electrode or the drain electrode of second transistor and the first transistor
Between first, second switch be connected to third transistor and the first transistor source electrode or drain electrode in another between.Into
One step, the grid of second transistor is connected between second switch and third transistor, and the grid of third transistor connects
It is connected between first switch and second transistor.
In some embodiments, there is provided the method for data switching.Using transistor, data-signal is by the source of transistor
Communicate between pole and the drain electrode of transistor in response to control signal.Voltage based on data-signal, the body end of transistor
Biased, to reduce decay of the transistor to data-signal.This method is also related to by opening switch by body bias crystal
One of the grid of pipe and the source electrode of transistor or drain electrode disconnect, and the grid of wherein body-biased transistors is connected to the source electrode of transistor
Or between one of drain electrode and one of the source electrode of body-biased transistors or drain electrode.
Discussion/summary above should not be considered as each embodiment or all embodiments that the invention has been described.With
Under attached drawing and description also illustrate various embodiments.
Brief description of the drawings
By the detailed description carried out below in conjunction with each attached drawing, each exemplary embodiment can be more fully understood from, its
In：
Fig. 1 shows the first switch circuit with body bias circuit of one or more embodiments according to the present invention；
Fig. 2 shows the biasing body ends of one or more embodiments according to the present invention to reduce the stream of signal attenuation
Journey；
Fig. 3 has gone out the second switch circuit with body bias circuit of one or more embodiments according to the present invention；With
And
Shown in Fig. 4 is the switch electricity of the 3rd with body bias circuit of one or more embodiments according to the present invention
Road；
Shown in Fig. 5 is the switch electricity of the 4th with body bias circuit of one or more embodiments according to the present invention
Road.
Embodiment
The aspect of each embodiment is shown by the example in attached drawing, and is described in detail, each reality described herein
Apply mode and also may be adapted to modification and alternative forms.It is to be understood, however, that the present invention is not limited to described particular implementation
Mode.On the contrary, it is intended to cover fall with including define all modifications of the invention in each side in the claims,
Equivalent and replacement.In addition, " example " signified in text of the statement is only that statement is used, it is non-for limitation.
It is believed that each aspect of the present invention can be applicable to a variety of different types of dresses for being related to transistor switching circuit
Put, in system and method.The many aspects of the present invention can show that the present invention is not by the described a variety of examples of context
It is limited to the example.
Each exemplary embodiment, which is directed toward, to be reduced since conducting resistance change declines with signal in transistor caused by bulk effect
The method and circuit subtracted.In some embodiments, a kind of device includes transistor, transistor have source electrode, drain electrode, grid with
Body end.Transistor is configured to, and in response to providing the control signal to grid, is carried from first in source electrode or drain electrode to another
For data-signal.As described above, due to bulk effect, change occurs in the conducting resistance of transistor.Due in conducting resistance
On change, data-signal may decay by transistor.Body bias circuit is configured to, and is biased based on the voltage of data-signal
The body end of transistor, to reduce the change of the conducting resistance shown by the first transistor.Due to conducting resistance change reduction,
The decay of data-signal can be reduced.
Each embodiment can differently bias N-type transistor or the body end of P-type transistor.In some implementations, body is inclined
Circuits are configured to, by by transistor towards source electrode source voltage or drain electrode drain voltage in smaller bias, come
Bias the body end of N-type transistor.In other realization, body bias circuit is configured to, the source electrode by transistor towards source electrode
Voltage is biased with the greater in the drain voltage of drain electrode, to bias the body end of P-type transistor.
In some implementations, body bias circuit includes the first and second on-off circuits.To bias N-type transistor, first opens
Powered-down road is configured to, and is less than source voltage in response to drain voltage, the body end of transistor is connected to the drain electrode of transistor.Second
On-off circuit is configured to, and is more than source voltage in response to drain voltage, the body end of transistor is connected to the source electrode of transistor.
In turn, to bias P-type transistor, first switch circuit is configured to, and is more than drain voltage in response to drain voltage,
The body end of transistor is connected to the drain electrode of transistor.Second switch circuit is configured to, and is less than source electrode electricity in response to drain voltage
The body end of transistor, is connected to the source electrode of transistor by pressure.
In some embodiments, body bias circuit is configured and arranged to bias the body end of the first transistor, to follow
The voltage of input data signal.For example, body bias circuit can increase in response to the voltage of the data-signal of input and increase and apply
The voltage being added in body end, and reduced in response to the voltage of the data-signal of input and reduce the voltage being applied in body end.
The method for further disclosing data switch.Using transistor, data-signal is by the source electrode and transistor in transistor
Communicate between drain electrode in response to control signal.Voltage based on data-signal, the body end of transistor are biased, to reduce
Decay of the transistor to data-signal.If transistor is N-type transistor, body end is by the source voltage towards source electrode or the leakage of drain electrode
Smaller biases in pole tension.If transistor is P-type transistor, body end is by inclined towards the greater in source voltage or drain circuit
Put.Body end can be exemplified by by body end be connected respectively to source electrode either drain electrode and inclined towards source voltage or drain voltage
Put.
As shown above, each embodiment can be used for biasing N-type or P-type transistor.Although each embodiment is not
This is defined in, is illustrated to simplify, each example shows and describes all referring to N-type transistor substantially.
Referring now to diagram, Fig. 1 shows the body bias circuit that has of one or more embodiments according to the present invention
On-off circuit.On-off circuit 100 includes transistor 110, and transistor 110 has source electrode (S), drain electrode (D), grid (G) and body
Hold (B).Transistor 110 is configured to, in response to providing control signal (Cntl) on grid, first from source electrode or drain electrode
A another offer data-signal (Data) into source electrode or drain electrode.It is as described above, due to bulk effect, transistor 110
Conducting resistance change occurs.Due to the change in conducting resistance, data-signal (Data) may be decayed by transistor.
Body bias circuit 120 is configured to, the source voltage (Vs) of drain voltage (Vd) and source electrode based on drain electrode, biases the body of transistor
End, to reduce the change for the conducting resistance that transistor 110 is shown.Due to the reduction of conducting resistance change, data can be reduced
The decay of signal (Data).
Fig. 2 shows the biasing body ends of one or more embodiments according to the present invention to reduce the stream of signal attenuation
Journey.For example, the flow can be realized by the body bias circuit shown in Fig. 1.Module 210, monitors the source voltage of transistor
With drain voltage.In the flow, the biasing of P-type transistor and N-type transistor is different.For N-type transistor, mould is determined
Block 212 flow be directed to determining module 214.If drain voltage Vd is less than source voltage Vs, determining module 214 flow be directed to mould
Block 218, body end is biased towards drain voltage.If drain voltage Vd is not less than source voltage Vs, determining module 214 is by flow
Module 220 is directed toward, body end is biased towards source voltage.
For P-type transistor, determining module 212 flow be directed to determining module 216.If drain voltage Vd is less than source electrode
Voltage Vs, determining module 216 flow be directed to module 220, and body end is biased towards source voltage.If drain voltage Vd is not small
In source voltage Vs, determining module 216 flow be directed to module 218, and body end is biased towards drain voltage.In module 218 or
After module 220 biases body end, which returns to module 210, and repeats.The flow can be repeated continuously.
Pass through the source electricity by body end towards smaller in the source voltage, drain voltage of N-type transistor and towards P-type transistor
The greater biases in pressure, drain voltage, and the change of conducting resistance can be reduced.In a kind of emulation realized, nmos pass transistor
By the data-signal of 0V-2V, by the change that the change of conducting resistance is reduced to about 0.3 ohm from about 0.8 ohm of change
Change.
In this example, which is configured to biasing p-type or N-type transistor.In some implementations, which can configure
Only to bias a type of transistor (p-type or N-type).
Fig. 3 shows that the another kind of one or more embodiments according to the present invention has the on-off circuit of body bias circuit.
On-off circuit 300 includes transistor 310, and transistor 110 has source electrode (S), drain electrode (D), grid (G) and body end (B).Crystal
Pipe 310 is configured to, in response to providing control signal (Cntl) on grid, from first in source electrode or drain electrode to source electrode or
Another in drain electrode provides data-signal (Data).Due to bulk effect, change occurs in the conducting resistance of transistor 310.By
In the change in conducting resistance, data-signal (Data) may be decayed by transistor.Body bias circuit 320 is configured to, base
In the drain voltage (Vd) of drain electrode and the source voltage (Vs) of source electrode, the body end of transistor is biased, is opened up with reducing transistor 310
The change for the conducting resistance shown.In this example, transistor 310 is nmos pass transistor.Body bias circuit 320 is configured to body end
Towards smaller's biasing in source voltage or drain voltage.
In this example, body bias circuit 320 includes the first transistor 322, it is configured to be less than in response to drain voltage
Source voltage and the drain electrode that the body end of transistor 310 is connected to transistor 310.Body bias circuit 320 also includes the second crystal
Pipe 324, it is configured to be less than drain voltage in response to source voltage and the body end of transistor 310 is connected to transistor 310
Source electrode.So as to which the body end of transistor 310 is pulled to source voltage and the smaller in drain voltage by body bias circuit 320.
In this example, due to the biasing, body end is not fully towards drain electrode or source voltage charge/discharge.But
It is brilliant when the difference between the voltage of body end and source/drain voltage is less than the threshold switching voltage of transistor 322 and 324
Body pipe 322 and 324 (also referred to as body-biased transistors) disconnects body end and source electrode with drain electrode.This maintain by drain/source to
Just (being negative for PMOS) voltage of body end, and help to prevent ghost effect, such as breech lock, drain-source directly leak etc..
Shown in Fig. 4 is the switch electricity of the 3rd with body bias circuit of one or more embodiments according to the present invention
Road.On-off circuit 400 includes transistor 410 and body bias circuit 420, and body bias circuit 420 has transistor 422 and 424, its
The element 310,320,322 and 324 being configured and arranged in the on-off circuit shown in reference Fig. 3.In this example, switch
Circuit further comprises that a kilo-ohm level resistor 440 is configured to over the ground discharge isolation well potential, this can further reduce switch
Ghost effect in circuit.In some implementations, on-off circuit 400 can also include switch 430,432, by transistor 422
It is connected/disconnects with 424 source/drain terminal with the source electrode and drain electrode end of transistor 410.By by the source of transistor 422 and 424/
The source electrode and drain electrode end of drain terminal and transistor 410 disconnect, and body bias circuit 420 is not enabled.In some embodiments, body is inclined
Circuits 420 can be enabled/do not enabled by user's control or control circuit.In one embodiment, 430 Hes are switched
432 can be controlled by gate voltage, which is far above the gate voltage for controlling transistor 422 and 424.For example, switch 430
Gate voltage with 432 can be in scope X-Y volts, and the gate voltage of transistor 422 and 424 can be in scope 0-4 volts.Often
And it can be MOS transistor to switch 430 and 432, it can have than 422 and 424 much higher breakdown voltage of transistor, example
Such as it is higher than twice of rank of transistor 422 and 424.
In one embodiment, the influence of possible electric discharge (ESD) event susceptible to static electricity of on-off circuit, this may cause electricity
Road does not meet specific ESD specifications.For example, please refer to Fig.4, when transistor 422 and 424 is directly connected to external input/output
During pad, transistor 422 and 424 is easily influenced by esd event.In one embodiment, by the way that the grid of body-biased transistors are connected
It is connected on after switch 430 and 432, the grid opposite outer I/o pad of body-biased transistors 422 and 424 is hidden, protects
Protect influence of the body-biased transistors from esd event.
Shown in Fig. 5 is the switch electricity of the 4th with body bias circuit of one or more embodiments according to the present invention
Road, wherein the grid of body-biased transistors be connected to after switch, to protect body-biased transistors from the influence of esd event.
On-off circuit 500 includes transistor 510 and body bias circuit 520, and body bias circuit 520 has transistor 522 and 524, it is matched somebody with somebody
Put and be arranged as the element 410,420,422 and 424 in the on-off circuit shown in reference Fig. 4.In the embodiment of Fig. 5
In, the grid of transistor 522 and 524 is connected between the source/drain of switch and opposite transistor.For example, the grid of transistor 522
It is connected between the drain electrode of transistor 524 and switch 532, the grid of transistor 524 are connected to drain electrode and the switch of transistor 522
Between 530.In the embodiment of Fig. 5,530 and 532 are switched by the source/drain terminal and transistor 510 of transistor 522,524
Source electrode/disconnection is connected with drain electrode end.By by the source electrode of the source/drain terminal of transistor 522 and 524 and transistor 510 and drain electrode
End disconnects, and body bias circuit 520 is not enabled.In some embodiments, body bias circuit 520 can by user's control or
Person's control circuit is enabled/not enabled.
The embodiment of the description can be adapted for the types of applications using transistor switching circuit, including but not limited to use
In the switch of high-speed communication, transmitter, input/output circuitry, and/or line drive.High-speed applications can use various communications
Agreement, into row data communication, to include but not limited to：DDR, SATA, display interface, PCIe, USB, MIPI, HDMI, v-by-one
And Ethernet.
Various modules, module or other circuits can be also realized for carrying out the action shown in described herein and/or figure
One or more of with behavior.In such cases, " module " (being sometimes " logic circuit " or " module ") is a kind of circuit,
It carries out one or more of these or relevant action/behavior (such as voltage bias).For example, more discussed above
In embodiment, one or more modules are discrete logic circuit or programmable logic circuit, are configured and arranged to carry out such as
These action/behaviors of circuit module in Fig. 2.In certain embodiments, such programmable circuit is one or more
Computer circuits, are programmed to perform one group (or multigroup) and instruct (and/or configuration data).Described instruction (and/or configuration number
According to) memory (circuit) can be stored in the form of firmware or software, and can be read from the memory (circuit).As one kind
Example, the first module and the second module include the collection instructed as existing for the hardware based circuits of CPU and one group with form of firmware
Close, wherein the first module includes the first CPU hardware circuit and one group of instruction, the second module is including the second CPU hardware circuit and separately
One group of instruction.
Specific embodiment is directed toward computer program product (such as non-volatile memory device), it include machine or
Computer readable medium, is stored with instruction, instruction can be run by computer (or other electronic equipments), to perform this on it
A little action/behaviors.
From the above discussion and description, person of ordinary skill in the field need not can strictly conform to foregoing implementation
Various modifications or variation are made to the present invention in the case of mode and application.For example, in some cases aspect of the invention and
Feature is shown in single attached drawing, but it is to be understood that, although may not be clearly in the attached drawing or explanation of the present invention
Pointed out in book, but some features in a wherein width attached drawing can be incorporated into the feature of another attached drawing and implement.These modifications
Without departing from true spirit and scope of the present invention, including shown in following claims.
Claims (19)
- A kind of 1. circuit device of body bias, it is characterised in that including：The first transistor, has source electrode, drain electrode, grid and body end, and the first transistor is configured and arranged to, and is arrived in response to providing The control signal of grid, from first in source electrode or drain electrode into source electrode or drain electrode another provide data-signal, first Transistor decay of data signals due to bulk effect；AndBody bias circuit, is configured and arranged to bias the body end of the first transistor based on the voltage of data-signal, and reduces Decay of the first transistor to data-signal, wherein the body bias circuit includes：Second transistor with source electrode, drain and gate, wherein source electrode and drain electrode are connected to the body end of the first transistor and the Between first in the source electrode of one transistor or drain electrode；Third transistor with source electrode, drain and gate, wherein source electrode and drain electrode are connected to the body end of the first transistor and the Between another in the source electrode of one transistor or drain electrode；The device further comprises：First switch, be connected to second transistor and the first transistor source electrode or drain electrode in first between；Second switch, be connected to third transistor and the first transistor source electrode or drain electrode in another between；The grid of wherein second transistor is connected between second switch and third transistor, and the grid of third transistor is connected to Between first switch and second transistor.
- 2. device as claimed in claim 1, it is characterised in that：The first transistor is N-type transistor, and due to bulk effect, the conducting resistance between its source electrode and drain electrode is for data-signal Different voltages change；AndBody bias circuit is configured and arranged to the source voltage and the drain voltage of drain electrode to source electrode by the body end of the first transistor Between smaller bias, so as to reduce the change of the conducting resistance showed by the first transistor.
- 3. device as claimed in claim 2, it is characterised in that：Body bias circuit is configured and arranged toIt is less than source voltage in response to drain voltage and biases the body end of the first transistor to the drain voltage of drain electrode；AndIt is less than drain voltage in response to source voltage and biases the body end of the first transistor to source voltage.
- 4. device as claimed in claim 2, it is characterised in that：Second transistor is configured and arranged to be less than source voltage in response to drain voltage and connect the body end of the first transistor To the drain electrode of the first transistor；AndThird transistor is configured and arranged to be more than source voltage in response to drain voltage and connect the body end of the first transistor To the source electrode of the first transistor.
- 5. device as claimed in claim 1, it is characterised in that：The first transistor is P-type transistor, and due to bulk effect, the conducting resistance between its source electrode and drain electrode is for data-signal Different voltages change；AndBody bias circuit is configured and arranged to the source voltage and the drain voltage of drain electrode to source electrode by the body end of the first transistor Between the greater bias, so as to reduce by the change for the conducting resistance that the first transistor is showed.
- 6. device as claimed in claim 5, it is characterised in that：Body bias circuit is configured and arranged toIt is more than source voltage in response to drain voltage and biases the body end of the first transistor to drain voltage；AndIt is more than drain voltage in response to source voltage and biases the body end of the first transistor to source voltage.
- 7. device as claimed in claim 6, it is characterised in that：Second transistor is configured and arranged to be more than source voltage in response to drain voltage and connect the body end of the first transistor To the drain electrode of the first transistor；AndThird transistor is configured and arranged to be less than source voltage in response to drain voltage and connect the body end of the first transistor To the source electrode of the first transistor.
- 8. device as claimed in claim 1, it is characterised in that：Body bias circuit is configured and arranged to biasing the first transistor Body end, to follow the voltage of data-signal.
- A kind of 9. circuit device of body bias, it is characterised in that including：The first transistor, has source electrode, drain electrode, grid and body end, due to bulk effect, the source electrode of the first transistor and leakage Conducting resistance between pole changes for the different voltages of the data-signal of input；AndBody bias circuit, is configured and arranged to the body end of biasing the first transistor, to reduce the conducting that the first transistor is showed The change of resistance, so as to reduce the decay of the data-signal of input；Body bias circuit includes：Second transistor with source electrode, drain and gate, wherein source electrode and drain electrode are connected to the body end of the first transistor and the Between first in the source electrode of one transistor or drain electrode；Third transistor with source electrode, drain and gate, wherein source electrode and drain electrode are connected to the body end of the first transistor and the Between another in the source electrode of one transistor or drain electrode；The device further comprises：First switch, be connected to second transistor and the first transistor source electrode or drain electrode in first between；Second switch, be connected to third transistor and the first transistor source electrode or drain electrode in another between；The grid of wherein second transistor is connected between second switch and third transistor, and the grid of third transistor is connected to Between first switch and second transistor.
- 10. device as claimed in claim 9, it is characterised in that further comprise：Switch, including the first transistor, and with the I/O node for being connected to drain electrode, the output for being connected to source electrode/ Input node and the control node for being connected to grid, switchgear distribution and are disposed to respond to control node and exceed threshold voltage And the data-signal of input is transmitted between I/O node and input/output node；AndWherein body bias circuit is configured to the body end of biasing the first transistor to follow the data-signal of input.
- 11. device as claimed in claim 9, it is characterised in that：The first transistor is N-type transistor；AndBody bias circuit is configured and arranged to the source voltage and the drain voltage of drain electrode to source electrode by the body end of the first transistor Between smaller bias.
- 12. device as claimed in claim 9, it is characterised in that：The first transistor is N-type transistor；AndSecond transistor is configured and arranged to be less than source voltage in response to drain voltage and connect the body end of the first transistor To the drain electrode of the first transistor；AndThird transistor is configured and arranged to be more than source voltage in response to drain voltage and connect the body end of the first transistor To the source electrode of the first transistor.
- 13. device as claimed in claim 9, it is characterised in that：The first transistor is P-type transistor；AndSecond transistor is configured and arranged to be more than source voltage in response to drain voltage and connect the body end of the first transistor To the drain electrode of the first transistor；AndThird transistor is configured and arranged to be less than source voltage in response to drain voltage and connect the body end of the first transistor To the source electrode of the first transistor.
- A kind of 14. method of body bias, it is characterised in that including：Data-signal is transmitted between the drain electrode of the source electrode and transistor of transistor in response to control signal, due to bulk effect, The decay of transistor data signals；The body end of transistor is biased based on the voltage of data-signal, to reduce decay of the transistor to data-signal；AndOne of source electrode or drain electrode of the grid of body-biased transistors and transistor are disconnected by opening switch, wherein body bias The grid of transistor is connected between one of source electrode and drain electrode of one of source electrode and drain electrode of transistor and body-biased transistors.
- 15. method as claimed in claim 14, it is characterised in that：Transistor is N-type transistor；AndBiasing body end includes biasing body end to the source voltage of source electrode and the drain voltage smaller of drain electrode.
- 16. method as claimed in claim 15, it is characterised in that biasing body end includes：It is less than source voltage in response to drain voltage and biases the body end of transistor to the drain voltage of drain electrode；AndIt is less than drain voltage in response to source voltage and biases the body end of the first transistor to source voltage.
- 17. the method described in claim 16, it is characterised in that：Drain voltage biasing of the body end of transistor to drain electrode is included：Body end is connected to drain electrode；AndSource voltage biasing of the body end of transistor to source electrode is included：Body end is connected to source electrode.
- 18. method as claimed in claim 14, it is characterised in that：Transistor is P-type transistor；AndIt is more than the source voltage of source electrode in response to the drain voltage of drain electrode, the body end of transistor is inclined to the drain voltage of drain electrode Put；AndIt is more than drain voltage in response to source voltage, the body end of transistor is biased to source voltage.
- A kind of 19. circuit device of body bias, it is characterised in that including：The first transistor, has source electrode, drain electrode, grid and body end, and the first transistor is configured and arranged to, and is arrived in response to providing The control signal of grid, data-signal, the first transistor data signals due to bulk effect are provided from input to output Decay；AndBody bias circuit, is configured and arranged to bias the body end of the first transistor based on the voltage of data-signal, to reduce Decay of one transistor to data-signal, wherein body bias circuit include：First body-biased transistors, have source electrode, drain and gate, and wherein source electrode and drain electrode is connected to the body end of the first transistor Between the input of the first transistor；Second body-biased transistors, have source electrode, drain and gate, and wherein source electrode and drain electrode is connected to the body end of the first transistor Between the output of the first transistor；The device further comprises：The first switch being connected between the first body-biased transistors and the input of the first transistor；The second switch being connected between the second body-biased transistors and the output of the first transistor；The grid of wherein the first body-biased transistors is connected between second switch and the second body-biased transistors, and the second body The grid of biasing transistor is connected between first switch and the first body-biased transistors.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/328,472 US9264034B2 (en) | 2013-12-19 | 2014-07-10 | Circuit and method for body biasing |
| US14/328,472 | 2014-07-10 |
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| CN105262467A CN105262467A (en) | 2016-01-20 |
| CN105262467B true CN105262467B (en) | 2018-05-04 |
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| CN110212900A (en) * | 2019-06-10 | 2019-09-06 | 桂林电子科技大学 | A kind of double trap CMOS complementary switch for eliminating bulk effect and substrate leakage |
| CN115395939A (en) * | 2022-07-25 | 2022-11-25 | 上海唯捷创芯电子技术有限公司 | Radio frequency switch circuit supporting high power mode, chip and electronic equipment thereof |
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| CN104769844A (en) * | 2012-11-15 | 2015-07-08 | 德州仪器公司 | Wide common mode range transmission gate |
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