CN105261703B - One kind is with Cu:CrOxThe perovskite photovoltaic cell of film as hole transmission layer and preparation method thereof - Google Patents
One kind is with Cu:CrOxThe perovskite photovoltaic cell of film as hole transmission layer and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to thin-film material and devices field, has and is related to one kind with Cu:CrOxThe perovskite photovoltaic cell of film as hole transmission layer and preparation method thereof.Perovskite photovoltaic cell of the present invention includes transparent conductive substrate, hole transmission layer Cu successively from down to up:CrOx, perovskite photosensitive activity layer, cathode interface layer and metal electrode.The hole transmission layer Cu:CrOxIt is using copper chromium composition target as target, is obtained by reacting radio frequency cosputtering method deposition.The structure of the copper chromium composition target is：1 or several metal copper wire annulus are directly placed in effective sputtering zone of chromium target, the sectional area of each metal copper wire annulus is identical, and the sectional area of each metal copper wire annulus effectively sputters the 1/40 of area for chromium target.The preparation-obtained hole transmission layer Cu of the present invention:CrOxFilm is as organic material PEDOT:The replacer of PSS, preparation method is simple, and technique simplifies, and preparation process cost is low.
Description
Technical field
The invention belongs to thin-film material and devices field, has and is related to one kind with Cu:CrOxFilm is as hole transmission layer
Perovskite photovoltaic cell and preparation method thereof.
Background technology
Solar energy has caused extensive concern as a kind of cleaning renewable sources of energy.Recent years, the calcium of metal halide
The photovoltaic cell of perovskite like structure is a dark horse.This kind of battery has larger carrier mobility, stronger light absorbing ability
With larger open-circuit voltage.In 2015, the power conversion efficiency (pce) of perovskite structure break through 20% (W.S.Yang, J.H.Noh,
N.J.Jeon,Y.C.Kim,S.Ryu,J.Seo,S.I.Seok,High-performance photovoltaic
perovskite layers fabricated through intramolecular exchange,Science 2015,
348,1234-1237), the efficiency of the perovskite structure photovoltaic cell of planar structure also be up to 18.1% (Jin Hyuck Heo,
Hye Ji Han, Dasom Kim, Tae Kyu Ahn, Sang Hyuk Im, 18.1%hysteresis-less inverted
CH3NH3PbI3planar perovskite hybrid solar cells,Energy Environ.Sci.,2015,8,
1602-1608), flexible battery efficiency is also up to 10% (K.Wojciechowski, M.Saliba, T.Leijtens, A.
Abate,H.J.Snaith,Energy Environ.Sci.2014,7,1142.).In addition, raw material sources are extensive, cryogenic fluid
Prepare and stability preferably causes it to have widely commercialized prospect.
In the semiconductors, the mobility of the mobility ratio electronics in hole is low.Select appropriate material with preparation process in sun
It is the key that perovskite photovoltaic cell obtains stability that hole transmission layer is inserted between pole and photosensitive layer.
The complex manufacturing technology of common organic material hole transmission layer spiro-OMeTAD, cost is higher, by water oxygen shadow
Ring so as to be difficult to commercially produce.Selection derives from a wealth of sources, cost is relatively low and competitive organic material PEDOT:PSS
The replacer of (Jeng et al, Advanced Materials 2013,25,3727.) as spiro-OMeTAD, but by
In in atmospheric environment, PEDOT:PSS is influenced by water oxygen and acid person's character, the performance that have impact on respective battery play.It is inorganic
Material C uI (Christians et al, J.Am.Chem.Soc., 2014,136,758.) stability is poor, in the effect of illumination
Under decompose, it is difficult to select as appropriate choice.CuSCN( et al, Nature Communications
5,2015,3834) there is sterilization (anti-corrosion) and insecticidal activity, be somewhat harmful to water, nor suitable replacer.
Inorganic oxide has relatively stable mechanical performance, good electrical property, relatively low cost, saturating in visible light part
It is bright, have the advantages that good heat endurance and carrier mobility ability, be easier in nanometer to micron size range control, draw
The research interest of researcher is played.At present by NiO (Jeng et al Adv.Mater.2014,26,4107-
4113), NiO (Jen et al, Advanced Materials, 2015,27,695-701), the Cu of Cu doping2O and CuO
(C.Zuo,L.Ding,Small,2015,DOI:10.1002/smll.201501330) substitute organic matter PEDOT:PSS conducts
The hole transmission layer of battery.CrO prepared by magnetron sputtering methodxFilm be a multivalent state complex (Ingle et al,
J.Appl.Phys.2001,89:4631-4635.), with good stability, bandwidth is about 3.7eV, but is collected empty
The ability in cave is poor.At certain temperature and oxygen pressure condition, cuprous oxide quite stable, 2.1-2.3 eV bandwidths with
CH3NH3PbI3100cm can be up to preferably matching, p-type hole mobility2/Vs.Using these advantages of cuprous oxide, to CrOxIt is thin
Film is doped, to improve its hole conduction ability, so as to be conducive to improve the efficiency of battery.At present, by this Cu:CrOxUsing
Had not been reported in the hole transmission layer of perovskite battery.
The content of the invention
The present invention is in view of the deficiencies of the prior art, and it is an object of the present invention to provide one kind is with Cu:CrOxFilm is as hole transmission layer
Perovskite photovoltaic cell and preparation method thereof.
For achieving the above object, the technical solution adopted by the present invention is：
One kind is with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, it is characterised in that from down to up according to
It is secondary including transparent conductive substrate, hole transmission layer Cu:CrOx, perovskite photosensitive activity layer, cathode interface layer and metal electrode.
In such scheme, the hole transmission layer Cu:CrOxIt is using copper chromium composition target as target, passes through radio frequency cosputtering
Method deposition obtains.
In such scheme, the structure of the copper chromium composition target is：Using the chromium target center of circle as the center of circle, in effective sputtering zone of chromium target
It is interior directly to place the different metal copper wire annulus of 1 metal copper wire annulus, 2 diameters or the different metal copper wire circle of 3 diameters
Ring.
In such scheme, the sectional area of each metal copper wire annulus is identical, and concrete operations are：With the metallic copper filament winding slightly put into
A little bit smaller annulus of diameter, with the metallic copper filament winding of choice refreshments into the bigger annulus of diameter.
In such scheme, the sectional area of each metal copper wire annulus effectively sputters the 1/40 of area for chromium target.
In such scheme, the technological parameter of the radio frequency cosputtering method is：Background vacuum 1 × 10-4~6 × 10-3Pa；
With high-purity Ar and O2Gas is respectively as sputtering and reacting gas, O in sputter procedure2Content be 20~80%, sputtering pressure is
1.0Pa；Sputtering power is 80~120W；Underlayer temperature is 30~400 DEG C during sputtering；Sputtering time is 1~5 minute.
In such scheme, the transparent conductive substrate is ITO electro-conductive glass, FTO electro-conductive glass or is coated with the flexibility of ITO thoroughly
Bright plastics.
In such scheme, the perovskite organic photosensitive layer is CH3NH3PbI3；The cathode interface layer is PCBM.
In such scheme, the metal electrode is Al electrodes, Au electrodes or Ag electrodes.
It is above-mentioned with Cu:CrOxPreparation method of the film as the perovskite photovoltaic cell of hole transmission layer, including following step
Suddenly；
(1) clean transparent conductive substrate and dry；
(2) deposition of hole transport layer Cu in transparent conductive substrate is deposited on using radio frequency cosputtering method:CrOxFilm；
(3) perovskite photosensitive activity layer is prepared on hole transmission layer；
(4) PCBM cathode interface layers are prepared using the method for spin coating on perovskite photosensitive activity layer；
(5) finally in perovskite photosensitive activity layer surface evaporated metal electrode.
Beneficial effects of the present invention are as follows：Hole transmission layer Cu prepared by the present invention:CrOxFilm has higher current-carrying
Transport factor, its energy level are preferably matched with perovskite photosensitive activity layer energy level, can improve its hole collection ability, Cu:CrOx
Film is as organic material PEDOT:The replacer of PSS, in preparation process, method is simple, is influenced by O2 to Ar ratio smaller；The present invention
Technique is simplified, reduces preparation process cost.
Brief description of the drawings
Fig. 1 is the structure diagram of chromium-copper composition target described in embodiment 3；1 is chromium target, and 2 be copper wire, and 3 be effectively to splash
Penetrate area.
Fig. 2 is Cu:CrOxPerovskite photovoltaic cell structure schematic diagram of the film as hole transmission layer；4 be electrically conducting transparent
Substrate, 5 be Cu:CrOxFilm, 6 be perovskite CH3NH3PbI3Photosensitive layer, 7 be PCBM cathode interface layers, and 8 be metal electrode.
Fig. 3 is embodiment 1-4 preparations with Cu:CrOxJ-V of the film as the perovskite photovoltaic cell of hole transmission layer
Curve.
Embodiment
For a better understanding of the present invention, with reference to the embodiment content that the present invention is furture elucidated, but the present invention
Content is not limited solely to the following examples.
In following embodiments, with Cu:CrOxPreparation method of the film as the perovskite photovoltaic cell of hole transmission layer, bag
Include following steps：
(1) preparation of target：It is that to cut into thickness be 2 millimeters of circular targets to 99.99% crome metal block by purity；By purity
The annulus circle of three different-diameters is prepared into for the metal copper wire of 99.9999% 3 kind of different thicknesses：With the metal copper wire slightly put
A little bit smaller annulus of diameter is coiled into, with the metallic copper filament winding of choice refreshments into the bigger annulus of diameter；Three metal copper wire annulus
Cross section metal product is identical, and the cross section metal of each metal copper wire annulus effectively sputters the 1/40 of area for chromium target.
(2) transparent conductive substrate is handled：The transparent conductive substrate used in experiment is conductive for ITO Conducting Glass, FTO
Glass substrate, flexible transparent plastic (such as polyester resin) substrate for being coated with ITO, are commercial product or known technology, are testing
Before transparent conductive substrate should be cleaned first：Transparent conductive substrate is cut into suitable shape size first, uses detergent
Cleaned up, then tap water rinse, deionized water rinsing, then place it in ultrasonic cleaner spend successively from
Sub- water, ethanol, acetone are respectively cleaned by ultrasonic 20 minutes, finally with deionized water rinsing, are dried up and are dried with dry high pure nitrogen
It can obtain the transparent conductive substrate of clean surface.
(3) Cu is deposited in transparent conductive substrate:CrOxThe depositing operation of film
A. the relevant position being put into sputtering target, copper wire ring, substrate in settling chamber, adjusts sample rack position, is allowed to and target
In face of standard, and keep appropriately distance.
B. vacuum system is vacuumized：Cooling water is opened first, opens mechanical pump, low vacuum is taken out, when system vacuum is less than
After 10Pa, molecular pump pumping high vacuum is opened, until system vacuum is less than 6 × 10-3Pa。
C. suitable high purity oxygen gas and argon gas are passed through into settling chamber, oxygen and ar pressure is reached required deposition gas
Pressure.
D. general radio frequency planar magnetic control sputtering process deposits are used：High-purity Ar and O2Gas is respectively as sputtering and reaction gas
Body, in whole process oxygen content in 20%~80% change, sputtering contrast temperature in 30~400 DEG C of changes, sputtering pressure
1.0Pa, 80~120W of sputtering power, control film thickness, sputtering time is 1~5 minute by sedimentation time.
E. after the completion of thin film deposition, sample is taken out in shutdown.
(4) prepared by solar cell
a.CH3NH3The preparation of I：By hydriodic acid aqueous solution (57wt%, Alfa Aesar) dense 15.0mL and 13.5mL first
Amine (CH3NH2) (40wt%in aqueous solution, Alfa Aesar) reacted, at 0 DEG C, stirred in nitrogen atmosphere
Mix 2 it is small when；Then solvent is removed using rotary evaporator, obtains ammonium methyl crystalline white powder CH3NH3I；Finally, recycle
After ether (Alfa Aesar) washing three times, a night is being dried in vacuo, it is stand-by.
B. perovskite photosensitive activity layer is prepared using one-step method：The CH that 0.395g is synthesized3NH3I and 1.15g PbI2
(Aldrich) mixed dissolution is in 2mL dimethylformamides (DMF, Alfa Aesar), and when stirring 12 is small at 60 DEG C；
In the gas tank of inert gas shielding, by the solution prepared in a manner of spin coating, exist by the parameter of 2,000 rpms, 30s
CrOx/ substrates prepare CH3NH3PbI3Film, then anneals 15 minutes at 100 DEG C；Or
Perovskite photosensitive activity layer is prepared using two-step method：By PbI2Powder is dissolved in dimethyl with the ratio of 550mg/ml
Formamide, when stirring 12 is small at 70 DEG C, obtains PbI2Solution for later use；By the CH of synthesis3NH3I white powders press 10.0mg/ml
Ratio is dissolved in isopropanol (traditional Chinese medicines) and obtains CH3NH3I solution；In the gas tank of inert gas shielding, the PbI that will prepare2
The mode of solution spin coating has CrO in depositionxPbI is prepared in the transparent conductive substrate of film2Film, high rotating speed control exist
2000rpm, duration 45s；Then it is annealed 30 minutes at 70 DEG C.The PbI that will finally prepare2/CrOx/ electrically conducting transparent serves as a contrast
Bottom is in CH3NH3Soak 5 minutes in I solution, dried up with nitrogen, and anneal 30 minutes at 70 DEG C in atmosphere, obtain
CH3NH3PbI3Film.
(5) PCBM of 20mg is dissolved in the chlorobenzene solution of 1ml, with spin-coating method in photosensitive layer CH3NH3PbI3On film
Prepare PCBM cathode interface layers；
(6) in photosensitive layer CH3NH3PbI3Evaporated metal electrode on film surface.
The present invention is using 2400 testers of Keithley to Cu:CrOxPerovskite photovoltaic of the film as hole transmission layer
Battery carries out the test of J-V curves.
Embodiment 1
One kind is with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, is prepared via a method which：
(1) FTO (SnO of doping fluorine are cleaned2) electro-conductive glass piece：First electro-conductive glass is put into and fills detergent (as stood in vain
Board liquid detergent) solution in soak 10 minutes, clear water rinses after then cleaning repeatedly；Then it is polished with polishing powder
Processing；Then ultrasound 20 minutes respectively are respectively put into the vessel equipped with deionized water, acetone and alcohol；Finally put deionization into
After water rinses twice, dried up and be put into baking oven with nitrogen gun and dried to eliminate stress for 80 DEG C.
(2) Cu is prepared on FTO substrates:CrOxFilm：Chromium target, a metal copper wire annulus and FTO substrates are loaded into magnetic
Control in sputtering equipment, wherein metal copper wire annulus is placed directly on chromium target, is sputtered with radio-frequency power supply；Operating condition is：This
Bottom vacuum：1×10-4Pa；O2/(Ar+O2)=40%, underlayer temperature：200 DEG C, sputtering pressure：1.0Pa, sputtering power exist
120W, sputtering time 1min.
(3) perovskite photosensitive activity layer is prepared using one-step method：The CH that 0.395g is synthesized3NH3I and 1.15g PbI2
(Aldrich) mixed dissolution is in 2mL dimethylformamides (DMF, Alfa Aesar), and when stirring 12 is small at 60 DEG C；
In the gas tank of inert gas shielding, by the solution prepared in a manner of spin coating, exist by the parameter of 2,000 rpms, 60s
CrOx/FTO substrates prepare CH3NH3PbI3Film, then anneals 15 minutes at 100 DEG C；
(4) preparation of cathode interface layer PCBM：With the method for spin coating by 2,000 rpms, the parameter of 60s in photosensitive layer
CH3NH3PbI3PCBM cathode interface layers are prepared on film.
(5) preparation of electrode：In the metal silver electrode of PCBM cathode interfaces layer surface evaporation about 150nm thickness.
The test of J-V curves, test result are carried out to battery manufactured in the present embodiment using 2400 testers of Keithley
See Fig. 3, the performance specification of battery：Open-circuit voltage is：0.85V；The short circuit current flow of battery is：12.22mA/cm2, fill factor, curve factor
For：56.3%, energy conversion efficiency is：5.87%.
Embodiment 2
One kind is with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, is prepared via a method which：
(1) ito glass is cleaned：With embodiment 1；
(2) Cu is prepared on ITO substrates:CrOxFilm：Chromium target, two metal copper wire annulus and ITO substrates are loaded into magnetic
Control in sputtering equipment, wherein metal copper wire annulus is placed directly on chromium target, is sputtered with radio-frequency power supply, and operating condition is：This
Bottom vacuum：6×10-3Pa；O2/(Ar+O2)=20%, underlayer temperature：200 DEG C, sputtering pressure：1.0Pa, sputtering power is 100
W, sputtering time 2min.
(3) perovskite photosensitive activity layer is prepared using two-step method：By PbI2Powder is dissolved in two with the ratio of 550mg/ml
Methylformamide, when stirring 12 is small at 70 DEG C, obtains PbI2Solution for later use；By the CH of synthesis3NH3I white powders press 10.0
Mg/ml ratios are dissolved in isopropanol (traditional Chinese medicines) and obtain CH3NH3I solution；In the gas tank of inert gas shielding, by what is prepared
PbI2The mode of solution spin coating has CrO in depositionxPbI is prepared on the ITO electro-conductive glass of film2Film, high rotating speed control exist
2000rpm, duration 45s；Then it is annealed 30 minutes at 70 DEG C.The PbI that will finally prepare2/CrOx/ ITO conduction glass
Glass is in CH3NH3Soak 5 minutes in I solution, dried up with nitrogen, and anneal 30 minutes at 70 DEG C in atmosphere, obtain CH3NH3PbI3
Film.
(4) preparation of cathode interface layer PCBM：With the method for spin coating by 5,000 rpms, the parameter of 60s in photosensitive layer
CH3NH3PbI3Film preparation PCBM cathode interface layers.
(5) preparation of electrode：In the metal aluminium electrode of the surface evaporation about 150nm thickness of PCBM cathode interface layers.
The test of J-V curves, test result are carried out to battery manufactured in the present embodiment using 2400 testers of Keithley
See Fig. 3, the performance specification of battery：0.97V, the short circuit current flow of battery are：12.48mA/cm2, fill factor, curve factor is：65.0%, energy
Measuring transfer efficiency is：7.84%.
Embodiment 3
One kind is with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, is prepared via a method which：
(1) it is coated with the cleaning of the flexible transparent plastic substrate of ITO：With embodiment 1.
(2) Cu is prepared on the flexible transparent plastic substrate for being coated with ITO:CrOxFilm：By chromium target, three metal copper wire circles
Ring is fitted into magnetron sputtering apparatus with the flexible transparent plastic substrate for being coated with ITO, and wherein metal copper wire annulus is placed directly in chromium target
On, sputtered with radio-frequency power supply, operating condition is：Base vacuum：6×10-3Pa；O2/(Ar+O2)=40%, underlayer temperature：
30 DEG C, sputtering pressure：1.0Pa, sputtering power is in 80W, sputtering time 5min.
(3) perovskite photosensitive activity layer is prepared using two-step method：With embodiment 2.
(4) preparation of cathode interface layer PCBM：With embodiment 1.
(5) preparation of electrode：In the gold electrode of the surface evaporation about 200nm thickness of PCBM cathode interface layers.
The test of J-V curves, test result are carried out to battery manufactured in the present embodiment using 2400 testers of Keithley
See Fig. 3, the performance parameter explanation of battery：Opens voltage is：0.91V, the short circuit current flow in pond are：11.79mA/cm2, filling because
Son is：60.5%, energy conversion efficiency is：6.49%.
Embodiment 4
One kind is with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, is prepared via a method which：
(1) FTO glass is cleaned：With embodiment 1.
(2) Cu is prepared in FTO glass substrates:CrOxFilm：By chromium target, a metal copper wire annulus and FTO glass lineds
Bottom is fitted into magnetron sputtering apparatus, and wherein metal copper wire annulus is placed directly on chromium target, is sputtered with radio-frequency power supply.Work bar
Part is：Base vacuum：1×10-4Pa；O2/(Ar+O2)=80%, underlayer temperature：400 DEG C, sputtering pressure：1.0 Pa, sputter work(
Rate is in 100W, sputtering time 3min.
(3) perovskite photosensitive activity layer is prepared using two-step method：With embodiment 2.
(4) preparation of cathode interface layer PCBM：With embodiment 1.
(5) preparation of electrode：With embodiment 1.
The test of J-V curves, test result are carried out to battery manufactured in the present embodiment using 2400 testers of Keithley
See Fig. 3, the performance parameter explanation of obtained battery：Open-circuit voltage is 0.90V, short-circuit current density 10.8mA/cm2, filling
The factor is 35.8%, photoelectric conversion efficiency 3.48%.
Obviously, above-described embodiment is only intended to clearly illustrate made example, and is not the limitation to embodiment.For
For those of ordinary skill in the art, other various forms of changes or change can also be made on the basis of the above description
It is dynamic.There is no necessity and possibility to exhaust all the enbodiments.And the obvious changes or variations therefore amplified
Within the protection domain of the invention.
Claims (9)
1. one kind is with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, it is characterised in that from down to up successively
Including transparent conductive substrate, hole transmission layer Cu:CrOx, perovskite photosensitive activity layer, cathode interface layer and metal electrode；It is described
Perovskite photosensitive activity layer is CH3NH3PbI3；The hole transmission layer Cu:CrOxIt is using copper chromium composition target as target, passes through
Radio frequency cosputtering method deposition obtains.
It is 2. according to claim 1 with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, its feature exist
In the structure of the copper chromium composition target is：Using the chromium target center of circle as the center of circle, 1 gold is directly placed in effective sputtering zone of chromium target
Belong to the different metal copper wire annulus of copper wire annulus, 2 diameters or the different metal copper wire annulus of 3 diameters.
It is 3. according to claim 2 with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, its feature exist
In the sectional area of each metal copper wire annulus is identical, and concrete operations are：With the metallic copper filament winding slightly put into a little bit smaller circle of diameter
Ring, with the metallic copper filament winding of choice refreshments into the bigger annulus of diameter.
It is 4. according to claim 2 with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, its feature exist
In the sectional area of each metal copper wire annulus effectively sputters the 1/40 of area for chromium target.
It is 5. according to claim 1 with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, its feature exist
In the technological parameter of the radio frequency cosputtering method is：Background vacuum 1 × 10-4~6 × 10-3 Pa；With high-purity Ar and O2Qi leel
It Zuo Wei not sputter and reacting gas, O in sputter procedure2Content be 20 ~ 80%, sputtering pressure is 1.0 Pa；Sputtering power is 80
~120 W；The temperature of transparent conductive substrate is 30~400 DEG C during sputtering；Sputtering time is 1~5 minute.
It is 6. according to claim 1 with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, its feature exist
In the transparent conductive substrate is ITO electro-conductive glass, FTO electro-conductive glass or the flexible transparent plastic for being coated with ITO.
It is 7. according to claim 1 with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, its feature exist
In the cathode interface layer is PCBM.
It is 8. according to claim 1 with Cu:CrOxPerovskite photovoltaic cell of the film as hole transmission layer, its feature exist
In the metal electrode is Al electrodes, Au electrodes or Ag electrodes.
9. claim 1 ~ 8 is any described with Cu:CrOxPreparation side of the film as the perovskite photovoltaic cell of hole transmission layer
Method, it is characterised in that include the following steps：
（1）Cleaning transparent conductive substrate is simultaneously dried；
（2）Deposition of hole transport layer Cu in transparent conductive substrate is deposited on using radio frequency cosputtering method:CrOxFilm；
（3）Perovskite photosensitive activity layer is prepared using one-step method or two-step method on hole transmission layer；
（4）PCBM cathode interface layers are prepared using spin-coating method on perovskite photosensitive activity layer；
（5）In PCBM cathode interface layer surface evaporated metal electrodes.
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| CN106252517B (en) * | 2016-10-10 | 2018-08-24 | 武汉工程大学 | One kind is with CuyCrzO2Film is the perovskite photovoltaic cell and preparation method thereof of hole transmission layer |
| CN106876596B (en) * | 2017-02-21 | 2019-01-22 | 华侨大学 | With Cr2O3For the preparation method of the perovskite solar battery of electron-transporting material |
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| CN101771132A (en) * | 2009-12-31 | 2010-07-07 | 武汉大学 | Organic photovoltaic battery with Cr2O3 as HTL (hole transport layer) and preparation method thereof |
| CN101779290A (en) * | 2007-09-25 | 2010-07-14 | 第一太阳能有限公司 | Photovoltaic devices including an interfacial layer |
| CN104332320A (en) * | 2014-11-04 | 2015-02-04 | 武汉大学深圳研究院 | Perovskite photovoltaic cell with oxide thin film of chromium as hole transport layer and preparation method thereof |
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Patent Citations (3)
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| CN101779290A (en) * | 2007-09-25 | 2010-07-14 | 第一太阳能有限公司 | Photovoltaic devices including an interfacial layer |
| CN101771132A (en) * | 2009-12-31 | 2010-07-07 | 武汉大学 | Organic photovoltaic battery with Cr2O3 as HTL (hole transport layer) and preparation method thereof |
| CN104332320A (en) * | 2014-11-04 | 2015-02-04 | 武汉大学深圳研究院 | Perovskite photovoltaic cell with oxide thin film of chromium as hole transport layer and preparation method thereof |
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| High-Performance and Environmentally Stable Planar Heterojunction Perovskite Solar Cells Based on a Solution-Processed Copper-Doped Nickel Oxide Hole-Transporting Layer;Jong H. Kim等;《Advanced marials》;20141129(第27期);正文部分第2页左栏第2段 * |
| Low-Temperature Sputtered Nickel Oxide Compact Thin Film as Effective Electron Blocking Layer for Mesoscopic NiO/CH3NH3PbI3 Perovskite Heterojunction Solar Cells;Kuo-Chin Wang等;《Applied Materials & interfaces》;20140723(第6期);全文 * |
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