CN105261545A - Plasma processing apparatus with multiple processing regions, and plasma technology monitoring method - Google Patents
Plasma processing apparatus with multiple processing regions, and plasma technology monitoring method Download PDFInfo
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Abstract
The invention discloses a plasma processing apparatus with multiple processing regions. The plasma processing apparatus comprises a plurality of processing regions; each processing region is used for performing plasma processing on each semiconductor substrate; each processing region comprises a monitoring unit and a data processing unit; the monitoring unit is used for monitoring at least one technological parameter or a correlated signal in the processing region where the monitoring unit is positioned; and the data processing unit is used for sending revised data to the monitoring unit when the processing region, where the data processing unit is positioned, has no technological state changes, and at least another one processing region has technological state changes, for correspondingly replacing the technological parameter or the correlated signal, monitored by the monitoring unit, with the same data length. The invention also provides a corresponding plasma technology monitoring method. The interference on the monitoring data caused by the technological state changes of different processing regions can be avoided.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical field, particularly a kind of multiprocessing area plasma body processing unit that can simultaneously process more semiconductor substrate and the process-monitor method being applied to this plasma processing apparatus.
Background technology
In the processing procedure of semiconductor chip, be increase the output of system, batch processing system usually can be adopted to exceed a slice semiconductor chip can process under at one time.A kind of typical two processing region plasma processing apparatus simultaneously processing two wafers shown in Fig. 1.As shown in Figure 1, plasma processing apparatus comprises one or more process chamber, and each process chamber 1 all has two or more treatment region 2 can isolated each other and preferably share air inlet system and exhaust system 3 (a common gas supply and a common emptying pump).The gas that these treatment regions are better also comprises separation distributes composition and RF electric power source to provide a uniform plasma density of the crystal column surface crossed in each treatment region.Process chamber is configured to allow process that is multiple, isolation to implement at least two treatment regions simultaneously so that at least two wafer can be distributed with the gas of the air inlet system and exhaust system be shared, separation a height processing controls that composition, the RF radio frequency source be separated and the Parameters Monitoring be separated and control system provide and process in a Room simultaneously.
For this vacuum flush system, owing to having shared some equipment and resource, as gas source, intake and exhaust equipment etc., and can simultaneously single treatment more semiconductor wafer, effectively can improve the defect of low production capacity and high production cost.
But but there is following defect when processing semiconductor chip in this type of batch processing vacuum flush system.To have two processing region in a process chamber, due to the difference of substrate itself or the matching difference of two processing regions, the treatment process of two substrates may terminate during difference, and the etching terminal such as etching processing procedure may occur in different time.If the Substrate treatment technique of one of them processing region is complete, the RF radio frequency source of this processing region will be closed, and no longer carry out substrate processing, and continue for the Substrate treatment technique in another processing region.But, because two processing regions are in same process chamber, and share same gas source and intake and exhaust equipment etc., stop the action of a processing region also directly can cause negative effect to technological parameter in another processing region.When Figure 2 shows that the RF radio frequency source of a process chamber interior closedown processing region of two processing region, the change curve of OES strength signal in two processing regions monitored.Accurately can judge etching terminal by OES strength signal, therefore it is widely used in plasma process.OES signal is with a function relevant to the technological parameter (as gas pressure) in process chamber.Owing to closing the moment of the RF radio frequency source of the first processing region, in this processing region, volume of plasma changes, and then causes process gas pressure inside to change.Therefore, to the also of short duration change of corresponding generation of OES strength signal in the second processing region, although can control system can automatically the technological parameters such as gas pressure in the second processing region be recovered afterwards, and make OES signal come back to stable state, but the short time disturbance of this OES signal probably causes the erroneous judgement of etching terminal, thus interference is caused to the technique of carrying out in the second processing region.
In prior art, for solving the problems of the technologies described above, normally adopt following technological means: after one of them processing region manufacturing process terminates, do not close RF radio frequency source at once, but just two RF radio frequency sources are closed together when the manufacturing process of another processing region also stops by the time.Although radio frequency source can be avoided so successively to close the change of the process chamber environment caused, if but the end time interval longer (especially may occur in the technique preparing different thickness) of manufacturing process in two processing regions, continuing the RF radio frequency source opened can cause damage to the substrate of process ends.
Therefore, need to propose the shake of the monitor signal that a kind of method occurs because of the difference of manufacturing process end time with indivedual processing region in the plasma processing apparatus eliminating multiprocessing region, also can ensure the processing quality of pending substrate in multiprocessing region simultaneously.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, provides a kind of plasma processing apparatus of multiprocessing region can eliminate because the change of part processing region technological parameter is to the interference of other processing region monitor signals.
For reaching above-mentioned purpose, the invention provides a kind of multiprocessing area plasma body processing unit, it comprises treatment chamber, air inlet system and exhaust system and trigger element.Treatment chamber comprises multiple processing region, and processing region described in each is configured with a radio frequency source and carries out plasma treatment to a semiconductor chip.Air inlet system and exhaust system comprise the shared air admission unit and shared exhaust unit that are communicated with described multiple processing region.Wherein, processing region described in each comprises a monitoring means and a data processing unit, and described monitoring means is for monitoring at least one technological parameter in this processing region or its coherent signal; Described trigger element is connected with each described data processing unit, for judging that the state of the art in processing region described at least one sends the data processing unit of the described processing region that triggering signal to state of the art does not change when changing; Described data processing unit is then revised data replace the described technological parameter of identical data length of being monitored by this monitoring means or its coherent signal, the technological parameter of monitoring with the described monitoring means of change to this processing region eliminating the state of the art in processing region described in other or the interference of its coherent signal with correspondence to described monitoring means for being sent when receiving described triggering signal.
Preferably, described in each, the data processing unit of processing region comprises memory module, correcting module and output module, described memory module be used for storing in advance each other described in the monitoring means of this processing region is monitored in the front and back certain hour section that changes of the state of the art of processing region technological parameter or its coherent signal; Described correcting module sets up corresponding data and curves according to the data that those are monitored, and the accidental data in described data and curves being modified to the steady state data meeting this data and curves shape, wherein said accidental data is the data corresponded in described data and curves in during described state of the art changes or the data corresponded to during described state of the art changes and thereafter in special time; Corresponding described steady state data is sent it to described monitoring means as described correction data according to described triggering signal by described processing region that described output module changes according to state of the art.
Preferably, described steady state data is adjacent with this accidental data in this data and curves and corresponds to outside during described state of the art changes or the data identical with described accidental data length corresponded to during described state of the art changes and thereafter outside special time.
Preferably, described accidental data is modified to described steady state data according to the shape of this data and curves by interpolation method or fitting process by described correcting module.
Preferably, described trigger element is connected with each described monitoring means, and sharply whether its technological parameter of being monitored by each described monitoring means or its signal change judge in each described processing region the change of whether generating process state.
Preferably, the technological parameter of current for described monitoring means monitoring or its coherent signal compare with the technological parameter of once monitoring before it or its coherent signal by described trigger element, if both differences exceed predetermined value, judge that the state of the art of the processing region residing for this monitoring means changes.
Preferably, when described radio frequency source is closed, the state of the art of the processing region that described trigger element judges residing for this radio frequency source changes.
Preferably, described technological parameter and coherent signal thereof comprise the light intensity signal of process gas pressure, process gas flow, chamber temp, radio frequency source power and specific wavelength.
Present invention also offers a kind of plasma process monitoring method being applied to above-mentioned plasma processing apparatus, it comprises the following steps:
S1: monitor technological parameter described at least one in processing region described in each or its coherent signal;
S2: when the state of the art of processing region changes described at least one, replace in described processing region that state of the art do not change follow-up by the described technological parameter of the identical data length of monitoring or its coherent signal with described correction data correspondence, the interference of the data of monitoring in the processing region this state of the art not changed with the change eliminating described state of the art.
Preferably, for processing region described in each, when its state of the art do not change but at least one other described in the operating state of processing region change time, replace the follow-up described correction data by the technological parameter of monitoring or its coherent signal in this processing region for correspondence and obtain by the following method:
Store in advance except this processing region each other described in this processing region is monitored in the front and back certain hour section that changes of the state of the art of processing region data; Data according to those monitorings set up corresponding data and curves, and the accidental data in described data and curves being modified to the steady state data meeting this data and curves shape, wherein said accidental data is the data corresponded in described data and curves in during described state of the art changes or the data corresponded to during described state of the art changes and thereafter in special time; And the described processing region to change according to state of the art using corresponding described steady state data as described correction data.
Preferably, described steady state data is adjacent with this accidental data in this data and curves and corresponds to outside during described state of the art changes or the data identical with described accidental data length corresponded to during described state of the art changes and thereafter outside special time.
Preferably, by interpolation method or fitting process, described accidental data is modified to described steady state data according to the shape of this data and curves.
Preferably, step S2 also comprise technological parameter by monitoring in each described processing region or its signal whether sharply change judge that the state of the art in each described processing region changes.
Preferably, the technological parameter of monitoring current in described processing region or its coherent signal are compared with the technological parameter of once monitoring before it or its coherent signal, if both differences exceed predetermined value, judge that the state of the art of this processing region changes.
Preferably, judge that the state of the art of this processing region changes when the radio frequency source of described processing region is closed.
Preferably, described technological parameter and coherent signal thereof comprise the light intensity signal of process gas pressure, process gas flow, chamber temp, radio frequency source power and specific wavelength.
Compared to prior art, multiprocessing area plasma body processing unit of the present invention configures a data processing unit be connected with monitoring means in each processing region, when the state of the art in other processing regions changes, can be replaced by the data revising the identical data length that next monitoring means will monitor by data in time, the change of other processing region state of the art can be avoided thus to the interference of Monitoring Data in the processing region of non-generating process state variation, also the actual process state in processing region can just accurately be reflected, prevent the fluctuation because of Monitoring Data from producing misoperation, further increase the reliability of multiprocessing area plasma body processing unit.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of two processing region plasma processing apparatus in prior art;
The curve chart of OES strength signal change in two processing regions that Fig. 2 monitors when closing the RF radio frequency source of a processing region for the plasma processing apparatus shown in Fig. 1;
Fig. 3 is the calcspar of the multiprocessing area plasma body processing unit of one embodiment of the invention;
Fig. 4 is the calcspar of the data processing unit of one embodiment of the invention;
Fig. 5 a and 5b is that the accidental data of data and curves is modified to the schematic diagram of steady state data by one embodiment of the invention;
Fig. 6 is that the accidental data of data and curves is modified to the schematic diagram of steady state data by another embodiment of the present invention;
Fig. 7 is the schematic flow sheet of the monitoring method of the plasma process of one embodiment of the invention;
Fig. 8 is the comparison diagram of the Monitoring Data utilizing the plasma Monitoring method of plasma process monitoring method of the present invention and prior art to obtain.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
In describing the invention, it should be noted that, unless otherwise prescribed and limit, term " is connected ", " connection " should be interpreted broadly, such as, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly be connected, also indirectly can be connected by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
In describing the invention, it should be noted that, term " gas ions processing unit " can be the devices such as plasma etching, plasma physical vapor deposition, plasma chemical vapor deposition, plasma surface cleaning.
The plasma processing apparatus in multiprocessing region of the present invention comprises treatment chamber, shared air inlet system and exhaust system and trigger element.Wherein, this treatment chamber comprises multiple processing region, and each processing region is all configured with a radio frequency source, and each processing region is used for a semiconductor chip and carries out plasma treatment.Air inlet system and exhaust system comprise the shared air admission unit and shared exhaust unit that are communicated with multiple processing region.
Each processing region comprises a monitoring means for monitoring at least one technological parameter in this processing region or its coherent signal, technological parameter mentioned here comprises the technological parameter relevant to plasma process such as process gas pressure, process gas flow, chamber temp, radio frequency source power, and the signal that technological parameter is correlated with can be the signal obtained by technological parameter, as the light intensity signal of specific wavelength judged for etching terminal, it is the function of technological parameter as air pressure, radio-frequency power.As previously mentioned, if the plasma process state in one of them processing region changes, and then cause the change of technological parameter of other processing regions, the technological parameter that other processing regions are monitored or its signal truly can not be reflected the state of the art in it.Therefore, design data processing unit of the present invention and trigger element are to eliminate this interference.
Concrete, each data processing unit is connected with each monitoring means one_to_one corresponding, for when the state of the art of at least one processing region changes, replace in the processing region that do not change of state of the art follow-up by the technological parameter of the identical data length of monitoring or its coherent signal to revise data correspondence, thus the interference of the data of monitoring in the change eliminating state of the art processing region that state of the art is not changed.Judgement for processing region whether generating process state variation is then completed by trigger element.Trigger element is connected with each data processing unit, it is when judging that the state of the art at least one processing region changes, send the data processing unit of the processing region that triggering signal to state of the art does not change, and these data processing units are once receive triggering signal with regard to the corresponding sending action carrying out revising data.Thus, even if the state of the art of indivedual processing region changes in plasma processing apparatus, the interior data monitored of the processing region do not changed also can not be caused to produce sudden change, ensure that the technique in these processing regions can normally be carried out.It should be noted that, the change of state of the art described in the present invention describes can comprise technique and terminate, starts or the switching of different process, the change of state of the art can be judged by the action of processing region relevant apparatus, as the closedown of RF radio frequency source, also can be whether technological parameter by monitoring in processing region or its signal occur sharply to change and judge.
Following by the present invention is described in detail in conjunction with specific embodiments.
Refer to Fig. 3, it is depicted as the calcspar of the multiprocessing area plasma body processing unit of one embodiment of the invention.The present embodiment is two processing region plasma processing apparatus, and have a process chamber 30, this process chamber 30 defines mutually isolated two processing regions 31 and 32.Process chamber 30 shares same air inlet system and exhaust system, and namely the shared air admission unit of air inlet system and exhaust system is all communicated with 32 with these two processing regions 31 with shared exhaust unit.Specifically, process gas is provided by the air admission unit shared, and the process gas from air admission unit is such as assigned in process chamber by spray head.Reacted process gas through discharge-channel by sharing exhaust unit, as process chamber discharged by vacuum pump, discharge-channel is connected to the suction channel of each processing region, can pressure between balanced two processing regions 31 and 32 by the suction of exhaust unit shared.All have a clamping device in each processing region 31 and 32, for placing pending substrate to carry out plasma process, clamping device can be any traditional clamping device, as electrostatic chuck.In addition, each processing region is all configured with a RF radio frequency source, such as, when adopting capacitance coupling type plasma processing apparatus, RF radio frequency source 310,320 is applied on the bottom electrode of the electrostatic chuck of processing region 31,32 respectively, to produce plasma respectively in two processing regions.
Please continue to refer to Fig. 3, in each processing region 31 (32), include a monitoring means 311 (321) and a data processing unit 312 (322).Wherein, monitoring means 311,321 is for monitoring at least one technological parameter in the processing region residing for it or its coherent signal.Trigger element 33 is connected with the data processing unit 213,322 of each processing region, when the state of the art that it judges in one of them processing region is as 31 change and another processing region as 32 non-generating process state variation time, send triggering signal to data processing unit 322, data processing unit 322 just will send corresponding data of revising to monitoring means 321 once receive triggering signal, carry out the data of the identical data length that next corresponding replacement monitoring means 321 will monitor.In each processing region, the change of state of the art is all judged by trigger element 33, specifically, whether the technological parameter that trigger element can be monitored according to each processing region or its signal are undergone mutation and are judged the change of state of the art, also can judge the change of state of the art according to the action of device in each processing region in addition.For example, when the state of the art of processing region 31 is etching state of termination from etching state variation, radio frequency source 310 can be closed, once find that radio frequency source 310 is closed, namely trigger element 33 judges that the state of the art of processing region 31 changes and sends the data processing unit 322 of triggering signal to processing region 32.Optionally, when the state of the art of processing region 31 is etching state of termination from etching state variation, the gas pressure that monitoring means 311 monitors can occur sharply to change, namely the gas pressure of current monitoring is compared with front gas pressure of once monitoring, difference DELTA is greater than predetermined value (predetermined value is such as the mean value far above the difference of adjacent monitoring air pressure), and so trigger element 33 also can judge the state of the art change of processing region 31 immediately and send triggering signal.
As shown in Figure 4, data processing unit 322 comprises memory module 3221, correcting module 3222 and output module 3223.The technological parameter that in the front and back certain hour section that the state of the art that memory module 3221 stores processing region 31 in advance changes, monitoring means 321 is monitored or its coherent signal, the data that correcting module 3222 is monitored according to those set up corresponding data and curves.The change state of the art of period or processing region 31 of the state of the art that can find when processing region 31 changes in period and subsequent special time, in data and curves, corresponding interval data can be undergone mutation, and therefore these accidental datas are modified to the steady state data meeting this data and curves shape by correcting module 3222.This steady state data is then sent to monitoring means 321 with correspondence replacement monitoring means 321 reality by the technological parameter of the identical data length of monitoring or its coherent signal as revising data according to triggering signal by output module 3223.It should be noted that, when there is more processing region, the data that in the front and back certain hour section that the state of the art that the memory module of data processing unit 322 can prestore each other processing region changes, monitoring means 321 is monitored, correcting module 3222 also can the corresponding multiple processing region of corresponding foundation multiple data and curves and calculate the corresponding steady state data of each data and curves, output module 3223 then responds triggering signal and according to the processing region (as being still processing region 32) of current generating process state variation, corresponding steady state data (namely corresponding to the steady state data calculated in the technological parameter of processing region 32 or the data and curves of its coherent signal) is sent to monitoring means 321 as correction data.
The calculating of correcting module 3222 pairs of steady state datas can be replaced by simple not mutated data and be realized.Specifically, suppose that accidental data is n, then correcting module 3222 directly using the individual not mutated data of n adjacent with n accidental data in data and curves as steady state data, outside during not mutated data mentioned here refer to and change corresponding to state of the art or the data corresponded to during state of the art changes and thereafter outside special time, that is to say in data and curves the data not needing to carry out revising.Adopt in this way, steady state data can be calculated quickly and easily.
One embodiment of the invention shown in Fig. 5 a and Fig. 5 b adopts not mutated data to replace schematic diagram accidental data in data and curves being modified to steady state data.As shown in the figure, accidental data m altogether, and the not mutated data before first accidental data are i-th data in data and curves, the not mutated data after last accidental data are the i-th+m+1 data in data and curves.Then correcting module can directly by the i-th-m+1, the i-th-m+2 ..., i-th data as steady state data, also can by the i-th+m+1, the i-th+m+2 ..., the i-th+2m data are as steady state data.
Figure 6 shows that in another preferred embodiment, correcting module 3222 calculates steady state data according to the shape of data and curves by interpolation method or fitting process, and the Monitoring Data obtained when adopting the steady state data obtained in this way and the interference do not changed by other processing region state of the art is more consistent.Fitting process such as can adopt fitting of a polynomial, Gauss curve fitting etc., and interpolation method can adopt the many algorithms such as Lagrange's interpolation, linear interpolation.
Comparatively simply linear interpolation method is adopted to calculate the steady state data for revising in Fig. 6.As shown in the figure, that data and curves reflects is OES strength signal I, accidental data m altogether, and the not mutated data before first accidental data are i-th data in data and curves, the not mutated data after last accidental data are the i-th+m+1 data in data and curves.Then this data slope of a curve
k＝{[I(i-2)+I(i-1)+I(i)]/3-[I(i+m+1)+I(i+m+2)+I(i+m+3)]/3}/[t(i+m+3)–t(i)]
Then steady state data I ' (i+1)=I (the i)+k* [t (i+1)-t (i)] of corresponding first accidental data I (i+1),
Steady state data I ' (i+2)=I (the i)+k* [t (i+2)-t (i)] of corresponding second accidental data I (i+2), the like, the steady state data that whole m accidental data is corresponding can be obtained.
In addition, the length revising data (i.e. steady state data) can set according to the actual requirements, in the present invention, accidental data (steady state data) not only comprises the data in during data and curves changes corresponding to state of the art, also comprise the data in the special time after during changing corresponding to state of the art, this is because, the During of state of the art may be very of short duration, such as RF radio frequency source is closed and is only needed 1 second, but the Monitoring Data of the monitoring means 321 caused by the change of this state of the art normal time from suddenling change to recovering is more of a specified duration, therefore needing suitably to increase the length of the revising data Design of length as revised data is 2 ~ 3 seconds.
Please refer to Fig. 7, be next described further to the plasma process monitoring method based on above-mentioned plasma processing apparatus.This monitoring method comprises the following steps:
Step 701, monitors at least one technological parameter in each processing region or its coherent signal.
Step 702, when the state of the art of at least one processing region changes, replaces in the processing region that do not change of state of the art follow-up by the technological parameter of the identical data length of monitoring or its coherent signal to revise data correspondence.
In above-mentioned steps, the change of processing region state of the art by the technological parameter of monitoring in this processing region or its signal whether sharply change judge, such as the technological parameter of current monitoring or its coherent signal are compared with the technological parameter of once monitoring before it or its coherent signal, if both differences exceed predetermined value, judge that the state of the art of this processing region changes; Can certainly be judged by the action of processing region relevant apparatus or equipment, if the radio frequency source such as putting on this processing region electrostatic chuck bottom electrode is closed, judge that the state of the art of this processing region changes.
For each processing region, when its state of the art does not change but the state of the art of at least one other processing region changes, replace the follow-up correction data by the technological parameter of monitoring or its coherent signal in this processing region for correspondence and obtain by the following method:
First, the data that in the front and back certain hour section that the state of the art storing each other processing regions except this processing region in advance changes, current processing region is monitored, these data obtain by experiment.
Then, data according to these monitorings set up corresponding data and curves, and the accidental data in data and curves being modified to the steady state data meeting this data and curves shape, accidental data mentioned here is in data and curves the data corresponding in during other processing region state of the art change or correspond in data and curves during other processing region state of the art change and thereafter in special time period.And steady state data mentioned here can be obtained by the replacement of simple nonmutationed data, such as, using adjacent with accidental data in data and curves and correspond to outside during state of the art changes or correspond to during state of the art changes and thereafter outside special time, identical with accidental data length data as steady state data; Also can be calculated by comparatively complicated interpolation method or fitting process according to the shape of data and curves.
When Fig. 8 shows the two processing region plasma processing apparatus processing region generating process state variation utilizing plasma process monitoring method of the present invention (right figure) to obtain with the plasma Monitoring method (left figure) of prior art, the comparison diagram of a certain Monitoring Data in another processing region of non-generating process state variation, can be clear that, the shake of the monitor signal of the processing region of non-generating process state variation is eliminated.
In sum, multiprocessing area plasma body processing unit of the present invention by configuring a data processing unit be connected with monitoring means in each processing region, when the state of the art in other processing regions changes, data processing unit in the processing region of non-generating process state variation can be replaced by the data revising the identical data length that next monitoring means will monitor by data in time, the change of other processing region state of the art can be avoided thus to the interference of Monitoring Data in the processing region of non-generating process state variation, also the actual process state in processing region can just accurately be reflected, prevent the fluctuation because of Monitoring Data from producing misoperation, further increase the reliability of multiprocessing area plasma body processing unit.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (16)
1. the plasma processing apparatus in multiprocessing region, is characterized in that, comprising:
Treatment chamber, it comprises multiple processing region, and processing region described in each is configured with a radio frequency source and carries out plasma treatment to a semiconductor chip;
Air inlet system and exhaust system, it comprises the shared air admission unit and shared exhaust unit that are communicated with described multiple processing region; And
Trigger element;
Wherein, processing region described in each comprises a monitoring means and a data processing unit; Described monitoring means is for monitoring at least one technological parameter in this processing region or its coherent signal; Described trigger element is connected with each described data processing unit, for judging that the state of the art in processing region described at least one sends the data processing unit of the described processing region that triggering signal to state of the art does not change when changing; Described data processing unit is used for sending when receiving described triggering signal to be revised data and replaces the described technological parameter of identical data length of being monitored by this monitoring means or its coherent signal, the technological parameter of monitoring with the described monitoring means of change to this processing region eliminating the state of the art in processing region described in other or the interference of its coherent signal with correspondence to described monitoring means.
2. plasma processing apparatus according to claim 1, it is characterized in that, described in each, the data processing unit of processing region comprises memory module, correcting module and output module, described memory module be used for storing in advance each other described in the monitoring means of this processing region is monitored in the front and back certain hour section that changes of the state of the art of processing region technological parameter or its coherent signal; Described correcting module sets up corresponding data and curves according to the data that those are monitored, and the accidental data in described data and curves being modified to the steady state data meeting this data and curves shape, wherein said accidental data is the data corresponded in described data and curves in during described state of the art changes or the data corresponded to during described state of the art changes and thereafter in special time; Corresponding described steady state data is sent it to described monitoring means as described correction data according to described triggering signal by described processing region that described output module changes according to state of the art.
3. multiprocessing area plasma body processing unit according to claim 2, it is characterized in that, described steady state data is adjacent with this accidental data in this data and curves and corresponds to outside during described state of the art changes or the data identical with described accidental data length corresponded to during described state of the art changes and thereafter outside special time.
4. multiprocessing area plasma body processing unit according to claim 2, it is characterized in that, described accidental data is modified to described steady state data according to the shape of this data and curves by interpolation method or fitting process by described correcting module.
5. multiprocessing area plasma body processing unit according to claim 1, it is characterized in that, described trigger element is connected with each described monitoring means, and sharply whether its technological parameter of being monitored by each described monitoring means or its signal change judge in each described processing region the change of whether generating process state.
6. multiprocessing area plasma body processing unit according to claim 5, it is characterized in that, the technological parameter of current for described monitoring means monitoring or its coherent signal compare with the technological parameter of once monitoring before it or its coherent signal by described trigger element, if both differences exceed predetermined value, judge that the state of the art of the processing region residing for this monitoring means changes.
7. multiprocessing area plasma body processing unit according to claim 1, is characterized in that, when described radio frequency source is closed, the state of the art of the processing region that described trigger element judges residing for this radio frequency source changes.
8. multiprocessing area plasma body processing unit according to claim 1, it is characterized in that, described technological parameter and coherent signal thereof comprise the light intensity signal of process gas pressure, process gas flow, chamber temp, radio frequency source power and specific wavelength.
9. a plasma process monitoring method, is applied to multiprocessing area plasma body processing unit as claimed in claim 1, it is characterized in that, comprise the following steps:
S1: monitor technological parameter described at least one in processing region described in each or its coherent signal;
S2: when the state of the art of processing region changes described at least one, replace in described processing region that state of the art do not change follow-up by the described technological parameter of the identical data length of monitoring or its coherent signal with described correction data correspondence, the interference of the data of monitoring in the processing region this state of the art not changed with the change eliminating described state of the art.
10. plasma process monitoring method according to claim 9, it is characterized in that, for processing region described in each, when its state of the art do not change but at least one other described in the state of the art of processing region change time, replace the follow-up described correction data by the technological parameter of monitoring or its coherent signal in this processing region for correspondence and obtain by the following method:
Store in advance except this processing region each other described in this processing region is monitored in the front and back certain hour section that changes of the state of the art of processing region data;
Data according to those monitorings set up corresponding data and curves, and the accidental data in described data and curves being modified to the steady state data meeting this data and curves shape, wherein said accidental data is the data corresponded in described data and curves in during described state of the art changes or the data corresponded to during described state of the art changes and thereafter in special time; And
The described processing region changed according to state of the art using corresponding described steady state data as described correction data.
11. plasma process monitoring methods according to claim 10, it is characterized in that, described steady state data is adjacent with this accidental data in this data and curves and corresponds to outside during described state of the art changes or the data identical with described accidental data length corresponded to during described state of the art changes and thereafter outside special time.
12. plasma process monitoring methods according to claim 10, is characterized in that, described accidental data is modified to described steady state data by interpolation method or fitting process by the shape according to this data and curves.
13. plasma process monitoring methods according to claim 9, it is characterized in that, step S2 also comprise technological parameter by monitoring in each described processing region or its signal whether sharply change judge that the state of the art in each described processing region changes.
14. plasma process monitoring methods according to claim 13, it is characterized in that, the technological parameter of monitoring current in described processing region or its coherent signal are compared with the technological parameter of once monitoring before it or its coherent signal, if both differences exceed predetermined value, judges that the state of the art of this processing region changes.
15. temperature-controlled process according to claim 9, is characterized in that, judge that the state of the art of this processing region changes when the radio frequency source of described processing region is closed.
16. temperature-controlled process according to claim 9, is characterized in that, described technological parameter and coherent signal thereof comprise the light intensity signal of process gas pressure, process gas flow, chamber temp, radio frequency source power and specific wavelength.
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| CN110785828A (en) * | 2017-04-27 | 2020-02-11 | 通快许廷格有限公司 | Power conversion unit, plasma processing apparatus, and method of controlling a plurality of plasma processes |
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| TWI553697B (en) | 2016-10-11 |
| TW201604917A (en) | 2016-02-01 |
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