CN105244578B - Glass pinboard integrated waveguide and production method based on Quasi-TEM mode - Google Patents
Glass pinboard integrated waveguide and production method based on Quasi-TEM mode Download PDFInfo
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- CN105244578B CN105244578B CN201510688737.1A CN201510688737A CN105244578B CN 105244578 B CN105244578 B CN 105244578B CN 201510688737 A CN201510688737 A CN 201510688737A CN 105244578 B CN105244578 B CN 105244578B
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Abstract
The present invention provides a kind of glass pinboard integrated waveguide based on Quasi-TEM mode, including a parallel plate waveguide structure, the parallel plate waveguide structure includes glass pinboard, is equipped with two metal tapes parallel to each other in the upper and lower surface of glass pinboard, forms parallel-plate waveguide between two metal tapes；Side wall on parallel-plate waveguide both sides is respectively arranged an air-discharging through-hole array respectively, the metal tape of each air hole perforation glass pinboard and glass pinboard upper and lower surface in air hole array.Further, in air hole array, the hole center spacing of adjacent air hole is less than 0.1 λ；λ is the wavelength for the wave propagated in parallel-plate waveguide.The present invention supports the microwave propagation of quasi- TEM mould, and not cut-off frequency can support the transmission of direct current and low frequency signal；Structure of the invention only forms air hole and compares with the plated-through hole SIW of existing structure, simplifies the plating seed layer of through-hole, separation layer, and the techniques such as metal layer enormously simplify technique.
Description
Technical field
The present invention relates to a kind of encapsulating structure, especially a kind of glass pinboard integrated waveguide.
Background technique
Microwave transmission line is microwave, indispensable base in millimeter-wave technology as the structure for propagating electromagnetic wave and information
This structure comprising planar structure and nonplanar structure.Nonplanar structure mainly includes rectangular waveguide, circular waveguide, coaxial line etc.
Structure, these structures are widely used in radar, the neck such as communication because of the advantages that low-loss, high power capacity and small electromagnetic leakage
Domain, but there is also be not easy to carry out integrated problem with the circuit in encapsulation simultaneously.Planar structure includes microstrip line, strip line and altogether
Surface wave is led, these structures are now widely used in the signal interconnection in encapsulated on pinboard, they easily with the circuit list in encapsulation
Member is integrated, but its dielectric loss and conductor losses are big, and due to its open nature, electromagnetic energy is revealed and radiated more serious.
With the fast development of modern age semiconductor technology and circuit system, electronic system just promptly to high speed, it is highly dense, high
Complexity, miniaturization and cost effective development, requirement of the people to Electronic Packaging are higher and higher.
Traditional substrate integration wave-guide (Substrate Integrated Waveguide, SIW) mainly uses traditional printing
Circuit board (PCB) and low-temperature co-fired ceramics (Low Temperature Co-fired Ceramic, LTCC) technique are realized, domestic
More research has been carried out in outer colleges and universities and scientific research institution in this respect (referring to bibliography and patent).Montreal, CAN
The team of university Wu Ke professor has done more research in this respect and has taken the lead in that SIW technology has been applied successfully, and see reference document
[1],[2].But PCB and LTCC process is larger, is unfavorable for integrated inside encapsulation, the document that sees reference [3]-[6].In order to
Reduce the process complexity of SIW and improve the integrated level of planar integrated circuit, Microelectronics Institute, Singapore is sharp on silicon pinboard
With through silicon via, half module and a quarter mould SIW structure are devised to reduce process area, the document that sees reference [7] [8].
Bibliography is as follows:
[1] D. Deslandes and K. Wu, “Integrated Microstrip and Rectangular
Waveguide in Planar Form,” IEEE Microw. Wireless Compon. Lett, vol. 11, no. 2
, pp. 68-70, 2001.
[2] X. Chen, and K. Wu, “Substrate Integrated Waveguide Cross-Coupled
Filter With Negative Coupling Structure,” IEEE Trans. Microw. Theory and
Tech., vol. 56, no. 1, pp. 142-149, 2008.
[3] W. Shen, W-Y. Yin, X-W. Sun, L-S. Wu, "Substrate Integrated
Waveguide Bandpass Filters With Planar Resonators for System-on-Package,"
IEEE Trans. Comp. Packaging and Manufacturing Tech., vol. 3, no. 2, pp.253-
261, Feb. 2013.
[4] K.S. Chin, C-C. Chang, C-H. Chen, Z. Guo, D. Wang, W.Che W, "LTCC
Multilayered Substrate-Integrated Waveguide Filter With Enhanced Frequency
Selectivity for System-in-Package Applications," IEEE Trans. Comp. Packaging
and Manufacturing Tech., vol.PP, no.99, pp.1,2014.
[5] X-P. Chen, K. Wu, "Substrate Integrated Waveguide CrossCoupled
Filter With Negative Coupling Structure," IEEE Trans. Microw. Theory and
Tech. , vol. 56, no. 1, pp.142-149, Jan. 2008.
[6] X.-P. Chen, K. Wu, "Self-Packaged Millimeter-Wave Substrate
Integrated Waveguide Filter With Asymmetric Frequency Response," IEEE Trans.
Comp., Packaging and Manufacturing Tech. , vol. 2, no. 5, pp.775-782, May
2012.
[7] C. Jin, R. Li, A. Alphones, and X. Bao, “Quarter-Mode Substrate
Integrated Waveguide and Its Application to Antennas Design,” IEEE Trans.
Antennas Propagat., vol. 61, no. 6, pp. 2921-2928, 2013.
[8] C. Jin, and Z. Shen, “Compact Triple-Mode Filter Based on
Quarter-Mode Substrate Integrated Waveguide, ” IEEE Trans. Microw. Theory and
Tech., vol. 62, no. 1, pp. 37-45, 2014
Referenced patent is as follows:
1) application number: 201210590709.2 patent names: SIW electric bridge；Main contents: SIW electric bridge is related to microwave device
Part is made of the metal throuth hole on medium substrate and medium substrate, has high isolation in microwave band (40GHz~56GHz)
Performance, low insertion loss and port standing wave.
2) application number: 201410148212.4 patent names: the miniaturized substrate integrated waveguide based on supernormal medium；It is main
Want content: the miniaturized substrate integrated waveguide based on supernormal medium is related to a kind of substrate integration wave-guide based on supernormal medium.It
It is the miniaturization in order to realize integrated waveguide in the case where guaranteeing bandwidth of operation.The upper and lower part correspondence of the dielectric-slab is opened
There is 2N metal throuth hole；The interdigital capacitor line of rabbet joint is etched between the through-hole on the top of dielectric-slab and the through-hole of lower part.The present invention is suitable
For as integrated waveguide device.
SIW structure and its related patents presented above based on PCB, LTCC and silicon pinboard, is all the shape in substrate
The desired metallic side wall of rectangular waveguide is realized at two rows of (or a row) plated-through holes.Due to existing between each metal throuth hole
Gap has cut off surface current, so that the wave of TE mould only be supported to propagate, belongs to the waveguide of TE mode.The waveguiding structure, which possesses, to be cut
Only frequency does not support the transmission of direct current and low frequency signal, is equivalent to high-pass filter.On the other hand, the SIW knot based on through silicon via
Structure causes the decaying of its radio signal transmission serious since silicon substrate loss is very big.
Summary of the invention
It is an object of the present invention to overcome the shortcomings of the prior art and provide a kind of glass based on Quasi-TEM mode
Pinboard integrated waveguide, structure of the invention are to traditional substrate integration wave-guide (Substrate Integrated
Waveguide, SIW) structure improves and proposes, and technical problem solved by the invention is in conjunction with plane and non-planar
Type structure, to realize the interconnection structure that electromagnetic exposure is small, loss is small, easy of integration simultaneously in glass pinboard.The structure has
The high power capacity of conventional metals waveguide, the characteristic of low-loss and low electromagnetic exposure, while being easy to and active device, passive device
It is integrated.Based on Quasi-TEM mode integrated wave guide structure, people can also further design low-loss filter, resonator, coupling
Device, the passive structures such as antenna solve the problems, such as current passive device large scale, are not easy to be integrated into pinboard, to realize switching
Compact insertion passive device (Integrated Passive Devices, IPD) provides basic unit in plate.The present invention adopts
Technical solution is:
A kind of glass pinboard integrated waveguide based on Quasi-TEM mode, including a parallel plate waveguide structure, feature exist
In:
The parallel plate waveguide structure includes glass pinboard, is equipped with parallel to each other two in the upper and lower surface of glass pinboard
A metal tape forms parallel-plate waveguide between two metal tapes；
Side wall on parallel-plate waveguide both sides is respectively arranged an air-discharging through-hole array respectively, each sky in air hole array
The metal tape of vent hole perforation glass pinboard and glass pinboard upper and lower surface.
Further, in air hole array, the hole center spacing of adjacent air hole is less than 0.1 λ；λ is in parallel-plate
The wavelength for the wave propagated in waveguide.
A kind of production method of the glass pinboard integrated waveguide based on Quasi-TEM mode, includes the following steps:
Step S1 provides a glass substrate as glass pinboard, glass pinboard is cleaned, above and below glass pinboard
Surface plates metal layer respectively；
The metal layer of glass pinboard upper and lower surface is etched into the length L and width W of needs by step S2 respectively, is formed
Two metal tapes parallel to each other；
Step S3 forms insulating layer in glass pinboard upper surface spin coating photoresist；On insulating layer cover glass pinboard
The metal tape on surface and upper surface；
Step S4 is exposed the photoresist of glass pinboard upper surface, cleans to photoresist, by two air-dischargings
In the pattern transfer to photoresist of through-hole array；
Step S5 continues to perform etching to form air hole to glass pinboard according to the figure of air hole array；It is empty
The metal tape of vent hole perforation glass pinboard and glass pinboard upper and lower surface；
Step S6 cleans the photoresist of glass pinboard upper surface, i.e. removal insulating layer.
Further, in the step S5, specifically with plasma etching industrial or laser etching process to glass pinboard
It performs etching to form air hole.
The present invention has the advantages that
1) due to not having using plated-through hole, the microwave propagation of the quasi- TEM mould of this structural support, not cut-off frequency can
To support the transmission of direct current and low frequency signal；
2) this structure only forms air hole and compares with the plated-through hole SIW of existing structure, simplifies the plating of through-hole
The techniques such as seed layer, separation layer, metal layer, enormously simplify technique, to reduce cost and improve yield rate；
3) this structure is realized using glass pinboard, the silicon delivered with Microelectronics Institute, SIW(Singapore on existing silicon substrate
Pinboard SIW) it compares, loss is small, signal transmission quality is high.
Detailed description of the invention
Fig. 1 is structural upright schematic diagram of the invention.
Fig. 2 is glass pinboard metal cladding schematic diagram in production method of the invention.
Fig. 3 is that metal layer etches to form metal tape schematic diagram in production method of the invention.
Fig. 4 is spin coating photoresist schematic diagram in production method of the invention.
Fig. 5 is the pattern transfer of air hole array in production method of the invention to photoresist schematic diagram.
Fig. 6 is that etching forms air hole schematic diagram in production method of the invention.
Fig. 7 is the photoresist schematic diagram that glass pinboard upper surface is removed in production method of the invention.
Specific embodiment
Below with reference to specific drawings and examples, the invention will be further described.
The production method that the present embodiment introduces the glass pinboard integrated waveguide based on Quasi-TEM mode first, simple process,
It does not need plating and forms metal throuth hole, technique realizes that steps are as follows:
Step S1 provides a glass substrate as glass pinboard 1, glass pinboard 1 is cleaned, in glass pinboard 1
Upper and lower surface plates metal layer 2 respectively；As shown in Figure 2；
The metal layer 2 of 1 upper and lower surface of glass pinboard is etched into the length L and width W of needs, shape by step S2 respectively
At two metal tapes 21,22 parallel to each other；As shown in Figure 3；Length L is as shown in fig. 1.
Step S3 forms insulating layer 3 in 1 upper surface spin coating photoresist of glass pinboard；3 cover glass pinboard of insulating layer
The metal tape 21 of 1 upper surface and upper surface；As shown in Figure 4；
Step S4 is exposed the photoresist of 1 upper surface of glass pinboard, cleans to photoresist, by two emptyings
In the pattern transfer to photoresist of vent hole array 4；As shown in Figure 5；
Step S5 turns glass with plasma etching industrial or laser etching process according to the figure of air hole array 4
Fishplate bar 1 performs etching to form air hole 41；Air hole 41 penetrates through glass pinboard 1 and 1 upper and lower surface of glass pinboard
Metal tape 21,22, as shown in Figure 6.
Step S6 cleans the photoresist of 1 upper surface of glass pinboard, i.e. removal insulating layer 3；Glass based on Quasi-TEM mode
Glass pinboard integrated waveguide completes.As shown in Figure 7.Fig. 7 be equivalent to A-A in Fig. 1 to cross-sectional view.
Finally formed glass pinboard integrated waveguide is described flat as shown in Figure 1, include a parallel plate waveguide structure 100
Plate waveguide 100 includes glass pinboard 1, is equipped with two metal tapes parallel to each other in the upper and lower surface of glass pinboard 1
21,22, parallel-plate waveguide is formed between two metal tapes 21,22；Side wall on parallel-plate waveguide both sides is respectively arranged a row respectively
Air hole array 4, each air hole 41 in air hole array 4 penetrate through following table on glass pinboard 1 and glass pinboard 1
The metal tape 21,22 in face.
In air hole array 4, the hole center spacing of adjacent air hole 41 is less than 0.1 λ；λ is in parallel-plate waveguide
The wavelength of the wave of propagation.Adjacent 41 spacing of control through-hole cannot be excessive, to prevent electromagnetic exposure.
The present invention uses parallel plate waveguide structure, and intensive air hole array is arranged in parallel-plate waveguide two respectively
The side wall on side.These air holes are as ideal magnetic boundary (Perfect magnetic conductor, PMC), for reducing
Electromagnetic wave is from the leakage in parallel-plate waveguide.
After studying and comparing the electromagnetic exposure distribution in glass substrate, both sides are located at using intensive air hole array
The parallel-plate waveguide of side wall, compared to the electricity of the parallel-plate waveguide conventional without air hole (conventionally employed plated-through hole)
Field distribution situation, the electric field that the parallel-plate waveguide of side wall is made of air hole more converge inside waveguiding structure region,
Electromagnetic exposure is less than the Conventional parallel board waveguide of not air hole, this demonstrate that the dense via array of air filling can be with
Electromagnetic field is converged inside waveguide as the boundary PMC.The boundary PMC that this intensive air hole array is constituted inhibits its electricity
Magnetic dispersion, especially inhibitory effect is more significant when high frequency.The present invention overcomes traditional technical problems, and compare tradition
Structure electromagnetic exposure is smaller, and structure and production are simpler, and propagation loss is small, and support the microwave propagation of quasi- TEM mould.
Compared with existing SIW structure, the main advantage of this structure is:
1) due to not having using plated-through hole, the microwave propagation of the quasi- TEM mould of this structural support, not cut-off frequency can
To support the transmission of direct current and low frequency signal；
2) this structure only forms air hole and compares with the plated-through hole SIW of existing structure, simplifies the plating of through-hole
The techniques such as seed layer, separation layer, metal layer, enormously simplify technique, to reduce cost and improve yield rate；
3) this structure is realized using glass pinboard, the silicon delivered with Microelectronics Institute, SIW(Singapore on existing silicon substrate
Pinboard SIW) it compares, loss is small, signal transmission quality is high.
Claims (3)
1. a kind of glass pinboard integrated waveguide based on Quasi-TEM mode, including a parallel plate waveguide structure (100), feature
It is:
The parallel plate waveguide structure (100) includes glass pinboard (1), is equipped in the upper and lower surface of glass pinboard (1) mutual
Parallel two metal tapes (21,22) form parallel-plate waveguide between two metal tapes (21,22)；
Side wall on parallel-plate waveguide both sides is respectively arranged an air-discharging through-hole array (4) respectively, each in air hole array (4)
The metal tape (21,22) of air hole (41) perforation glass pinboard (1) and glass pinboard (1) upper and lower surface；
In air hole array (4), the hole center spacing of adjacent air hole (41) is less than 0.1 λ；λ is in parallel-plate waveguide
The wavelength of the wave of propagation.
2. a kind of production method of the glass pinboard integrated waveguide based on Quasi-TEM mode, which is characterized in that including following steps
It is rapid:
Step S1 provides a glass substrate as glass pinboard (1), cleans glass pinboard (1), in glass pinboard (1)
Upper and lower surface plate metal layer (2) respectively；
The metal layer (2) of glass pinboard (1) upper and lower surface is etched into the length L and width W of needs, shape by step S2 respectively
At two metal tapes (21,22) parallel to each other；
Step S3 forms insulating layer (3) in glass pinboard (1) upper surface spin coating photoresist；The switching of insulating layer (3) cover glass
The metal tape (21) of plate (1) upper surface and upper surface；
Step S4 is exposed the photoresist of glass pinboard (1) upper surface, cleans to photoresist, by two air-dischargings
In the pattern transfer to photoresist of through-hole array (4)；
Step S5 continues to perform etching to form air hole to glass pinboard (1) according to the figure of air hole array (4)
(41)；The metal tape (21,22) of air hole (41) perforation glass pinboard (1) and glass pinboard (1) upper and lower surface；
Step S6 removes the insulating layer (3) of glass pinboard (1) upper surface.
3. the production method of the glass pinboard integrated waveguide based on Quasi-TEM mode, feature exist as claimed in claim 2
In,
In the step S5, shape specifically is performed etching to glass pinboard (1) with plasma etching industrial or laser etching process
At air hole (41).
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103376505A (en) * | 2012-04-24 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Y-type bifurcated optical waveguide and manufacturing method thereof |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103376505A (en) * | 2012-04-24 | 2013-10-30 | 鸿富锦精密工业（深圳）有限公司 | Y-type bifurcated optical waveguide and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| "基片集成非辐射介质波导（SINRD）与平面电路的混合集成研究";李帆;《中国优秀硕士学位论文全文数据库信息科技辑》;20150515(第5期);第I135-138页 * |
| "玻璃通孔阵列电磁耦合的柱面波模式分解法";李军等;《2015年全国微波毫米波会议论文集》;20150530;第1702-1704页 * |
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