CN105236971A - Temperature stable low dielectric constant microwave dielectric ceramic Li2Sr2LaV3O12 - Google Patents
Temperature stable low dielectric constant microwave dielectric ceramic Li2Sr2LaV3O12 Download PDFInfo
- Publication number
- CN105236971A CN105236971A CN201510669361.XA CN201510669361A CN105236971A CN 105236971 A CN105236971 A CN 105236971A CN 201510669361 A CN201510669361 A CN 201510669361A CN 105236971 A CN105236971 A CN 105236971A
- Authority
- CN
- China
- Prior art keywords
- dielectric ceramic
- powder
- microwave dielectric
- microwave
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Inorganic Insulating Materials (AREA)
Abstract
The invention discloses a temperature stable low dielectric constant microwave dielectric ceramic Li2Sr2LaV3O12 and a preparation method thereof. The method includes: (1) weighing Li2CO3, SrCO3, La2O3 and V2O5 original powder with purity of over 99.9% (weight percentage) according to the composition of Li2Sr2LaV3O12; (2) subjecting the raw materials of step (1) to wet ball-milling mixing for 12h, taking distilled water as the ball-milling medium, performing drying, then conducting presintering in 750DEG C air atmosphere for 6h; and (3) adding a binder into the powder prepared in step (2) and conducting granulation, then performing compression moulding, and finally conducting sintering in 800-850DEG C air atmosphere for 4h. The binder adopts a polyvinyl alcohol solution with a mass concentration of 5%, and the adding amount of polyvinyl alcohol accounts for 3% of the total mass of the powder. The ceramic prepared by the method provided by the invention can be well sintered below 900DEG C, and has a dielectric constant up to 27.2-27.7, a quality factor Qf value up to 104000-143000GHz and a small temperature coefficient of resonant frequency, thus having enormous application value in industry.
Description
Technical field
The present invention relates to dielectric ceramic material, dielectric ceramic material particularly relating to resonator and the microwave device such as wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε
rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000GHz; (3) the temperature factor τ of resonant frequency
?little of as far as possible to ensure the thermostability that device has had, general requirement-10ppm/ DEG C≤τ
?≤+10ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO
2microwave dielectric filter, but its temperature coefficient of resonance frequency τ
?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε
rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al
2o
3-TiO
2, Y
2baCuO
5, MgAl
2o
4and Mg
2siO
4deng, its ε
r≤ 20, quality factor q × f>=50000GHz, τ
?≤ 10ppm/ ° of C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε
rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta
2o
5, BaO-ZnO-Ta
2o
5or BaO-MgO-Nb
2o
5, BaO-ZnO-Nb
2o
5system or the composite system MWDC material between them.Its ε
r=20 ~ 35, Q=(1 ~ 2) × 10
4(under f>=10GHz), τ
?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz as dielectric resonance device.
(3) medium ε
rwith the microwave dielectric ceramic of Q value, mainly with BaTi
4o
9, Ba
2ti
9o
20(Zr, Sn) TiO
4deng the MWDC material for base, its ε
r=35 ~ 45, Q=(6 ~ 9) × 10
3(under f=3 ~-4GHz), τ
?≤ 5ppm/ ° of C.Be mainly used in microwave military radar in 4 ~ 8GHz range of frequency and communication system as dielectric resonance device.
(4) high ε
rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln
2o
3-TiO
2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li
2o-Ln
2o
3-TiO
2series, lead base series material, Ca
1-xln
2x/3tiO
3be contour ε
rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2o
3-TiO
2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low melting point metal such as Ag and Cu burn formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperatureCo-firedCeramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and research, but due to three performance index (ε of microwave dielectric ceramic
rwith Qf and τ
?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requriementss and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot application request.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.Explore and low-temperature sintering can have near-zero resonance frequency temperature coefficient (-10ppm/ DEG C≤τ with exploitation simultaneously
?≤+10ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the microwave dielectric ceramic of higher figure of merit.
Summary of the invention
The object of this invention is to provide and a kind of there is good thermostability and low-loss, simultaneously low temperature sintering dielectric constant microwave dielectric ceramic material and preparation method thereof.
The chemical constitution of microwave dielectric ceramic material of the present invention is Li
2sr
2laV
3o
12.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than Li
2cO
3, SrCO
3, La
2o
3and V
2o
5starting powder press Li
2sr
2laV
3o
12composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 800 ~ 850 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
Advantage of the present invention: Li
2sr
2laV
3o
12ceramic sintering temperature is low, and raw materials cost is low; Specific inductivity reaches 27.2 ~ 27.7, its temperature coefficient of resonance frequency τ
?nearly zero, temperature stability is good; Quality factor q f value, up to 104000-143000GHz, can be widely used in the manufacture of the microwave devices such as various dielectric resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various dielectric resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:
Claims (1)
1. a temperature-stable dielectric constant microwave dielectric ceramic, is characterized in that the chemical constitution of described microwave dielectric ceramic is: Li
2sr
2laV
3o
12;
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be 99.9%(weight percent by purity) more than Li
2cO
3, SrCO
3, La
2o
3and V
2o
5starting powder press Li
2sr
2laV
3o
12composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 800 ~ 850 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510669361.XA CN105236971A (en) | 2015-10-18 | 2015-10-18 | Temperature stable low dielectric constant microwave dielectric ceramic Li2Sr2LaV3O12 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510669361.XA CN105236971A (en) | 2015-10-18 | 2015-10-18 | Temperature stable low dielectric constant microwave dielectric ceramic Li2Sr2LaV3O12 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN105236971A true CN105236971A (en) | 2016-01-13 |
Family
ID=55034852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510669361.XA Pending CN105236971A (en) | 2015-10-18 | 2015-10-18 | Temperature stable low dielectric constant microwave dielectric ceramic Li2Sr2LaV3O12 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105236971A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104876572A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | High-quality factor ultralow-dielectric constant microwave dielectric ceramic CaLi3La3Mo2O13 |
CN104876570A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | High-quality factor low-dielectric constant microwave dielectric ceramic BaLi3La3W2O13 |
CN104876569A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | High-quality factor low-dielectric constant microwave dielectric ceramic SrLiLaW2O9 |
CN104876578A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | Low-dielectric constant microwave dielectric ceramic SrLi3EuV8O24 and preparation method thereof |
CN104926302A (en) * | 2015-05-23 | 2015-09-23 | 桂林理工大学 | Low-dielectric-constant microwave dielectric ceramic CaLi3NdV8O24 and preparation method thereof |
-
2015
- 2015-10-18 CN CN201510669361.XA patent/CN105236971A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104876572A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | High-quality factor ultralow-dielectric constant microwave dielectric ceramic CaLi3La3Mo2O13 |
CN104876570A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | High-quality factor low-dielectric constant microwave dielectric ceramic BaLi3La3W2O13 |
CN104876569A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | High-quality factor low-dielectric constant microwave dielectric ceramic SrLiLaW2O9 |
CN104876578A (en) * | 2015-05-23 | 2015-09-02 | 桂林理工大学 | Low-dielectric constant microwave dielectric ceramic SrLi3EuV8O24 and preparation method thereof |
CN104926302A (en) * | 2015-05-23 | 2015-09-23 | 桂林理工大学 | Low-dielectric-constant microwave dielectric ceramic CaLi3NdV8O24 and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104311017B (en) | A kind of vanadium base temperature-stable low-temperature sintered microwave dielectric ceramic and preparation method thereof | |
CN104311031B (en) | Low temperature sintering dielectric constant microwave ceramic medium Ca 3y 4v 2o 14 | |
CN104844211A (en) | Temperature-stable medium-dielectric constant microwave dielectric ceramic Li2SmNbO5 | |
CN104311008B (en) | Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic BaNb 4v 2o 16and preparation method thereof | |
CN105314975A (en) | High-quality factor temperature stable type microwave dielectric ceramic BaLi2ZnGeO5 and preparation method thereof | |
CN104311020B (en) | A kind of temperature-stable ultralow dielectric microwave dielectric ceramic and preparation method thereof | |
CN104311022B (en) | Ultralow dielectric microwave dielectric ceramic Li 2bi 3v 7o 23and preparation method thereof | |
CN104725044A (en) | Temperature-stable microwave dielectric ceramic LiMg2V7O20 with ultra-low dielectric constant | |
CN104311025B (en) | A kind of ultralow dielectric microwave dielectric ceramic MgSi 4v 6o 24and preparation method thereof | |
CN104311019B (en) | A kind of temperature-stable ultralow dielectric microwave dielectric ceramic and preparation method thereof | |
CN104291820B (en) | The dielectric constant microwave ceramic medium AgNb of near-zero resonance frequency temperature coefficient 5bi 2o 16 | |
CN105503157A (en) | Temperature-stabilization type low-dielectric-constant microwave dielectric ceramic Ba3Li2Ge2O8 and preparation method thereof | |
CN105218084A (en) | Dielectric constant microwave dielectric ceramic Li 4ba 2biV 3o 13and preparation method thereof | |
CN105272241A (en) | Temperature-stable microwave dielectric ceramic LiCaVO4 with low dielectric constant | |
CN104844209A (en) | Temperature-stable low-dielectric constant microwave dielectric ceramic Li2NdV5O15 | |
CN104311027B (en) | Ultralow dielectric microwave dielectric ceramic Li 4siWO 7and preparation method thereof | |
CN104311028B (en) | Ultralow dielectric microwave dielectric ceramic Li 3ndWO 6and preparation method thereof | |
CN104311026B (en) | A kind of temperature-stable microwave dielectric ceramic ZnTi 2v 4o 15and preparation method thereof | |
CN105236972A (en) | Temperature stable low dielectric constant microwave dielectric ceramic LiSrSmV2O8 | |
CN105503173A (en) | Temperature-stable low-dielectric-constant microwave dielectric ceramic Ba3Bi2GeO8 and preparation method thereof | |
CN105218085A (en) | Dielectric constant microwave dielectric ceramic Li 4bi 3sb 3o 14and preparation method thereof | |
CN105218086A (en) | Dielectric constant microwave dielectric ceramic BaLi 3znBi 5o 11and preparation method thereof | |
CN105418069A (en) | Temperature-stable microwave dielectric ceramic LiGeV3O10 and preparation method therefor | |
CN105218093A (en) | Temperature-stable medium dielectric constant microwave medium microwave dielectric ceramic BaLi 2laVO 6 | |
CN105272250A (en) | Temperature-stable low-dielectric-constant microwave dielectric ceramic Li4Sm2TiO7 capable of being sintered at low temperature |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160113 |
|
WD01 | Invention patent application deemed withdrawn after publication |