CN105226076B - Display panel - Google Patents

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Publication number
CN105226076B
CN105226076B CN201510562474.XA CN201510562474A CN105226076B CN 105226076 B CN105226076 B CN 105226076B CN 201510562474 A CN201510562474 A CN 201510562474A CN 105226076 B CN105226076 B CN 105226076B
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China
Prior art keywords
material block
luminescent material
layer
region
area
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CN201510562474.XA
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CN105226076A (en
Inventor
沐俊应
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Wuhan China Star Optoelectronics Technology Co Ltd
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Wuhan China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd, Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201510562474.XA priority Critical patent/CN105226076B/en
Priority to PCT/CN2015/089790 priority patent/WO2017041316A1/en
Priority to US14/891,226 priority patent/US10115923B2/en
Publication of CN105226076A publication Critical patent/CN105226076A/en
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Publication of CN105226076B publication Critical patent/CN105226076B/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8051Anodes
    • H10K59/80516Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/16Electron transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • H10K50/171Electron injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/10Triplet emission
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/27Combination of fluorescent and phosphorescent emission

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a kind of display panel, including display unit, display unit is divided into first, second, third, fourth and the 5th region, and display unit includes anode layer, hole injection layer, hole transmission layer, luminous material layer, electron transfer layer, electron injecting layer and cathode layer.Luminous material layer includes first, second, third, fourth and the 5th illuminating part;First illuminating part is the part that the first luminescent material block is located at first area;Second illuminating part by the first luminescent material block is located at the part of second area and the second luminescent material block is located at the part of second area and stacks and form;3rd illuminating part is the part that the second luminescent material block is located at the 3rd region;4th illuminating part, which by the second luminescent material block is located at four-range part and the 3rd luminescent material block and is located at four-range part and stacks, to be formed;5th illuminating part is the part that the 3rd luminescent material block is located at the 5th region.The present invention advantageously allows the smaller of the pixel of display panel.

Description

Display panel
【Technical field】
The present invention relates to display technology field, more particularly to a kind of display panel.
【Background technology】
Traditional OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) display panel typically wraps Include anode layer, cathode layer, hole injection layer, hole transmission layer, electron injecting layer, electron transfer layer, luminous material layer etc..Its In, the different subpixel in the display panel corresponds to different luminescent materials.
Luminescent material in each sub-pixel is generally by FMM (Fine Metal Mask, fine metal mask) work Skill is formed, but is constrained to FMM minimum open dimension, the luminescent material corresponding to sub-pixel in the display panel Size can not become smaller.This is unfavorable for the lifting of resolution ratio.
Therefore, it is necessary to a kind of new technical scheme is proposed, to solve above-mentioned technical problem.
【The content of the invention】
It is an object of the invention to provide a kind of display panel, and it can cause the smaller of the pixel of display panel, carry The resolution ratio of high display panel.
To solve the above problems, technical scheme is as follows:
A kind of display panel, the display panel include:An at least display unit, the display unit are divided into the firstth area Domain, second area, the 3rd region, the 4th region and the 5th region, the display unit include:Anode layer, the anode layer bag Include:The first anode, the first anode are arranged at the first area;Second plate, the second plate are arranged at described Two regions;Third anode, the third anode are arranged at the 3rd region;4th anode, the 4th anode are arranged at institute State the 4th region;And the 5th anode, the 5th anode are arranged at the 5th region;Hole injection layer;Hole transmission layer; Luminous material layer, the luminous material layer include:First illuminating part, first luminous site are described in the first area First illuminating part is the part that the first luminescent material block is located at the first area;Second illuminating part, second luminous site In the second area, second illuminating part is located at the part and second of the second area by the first luminescent material block The part stacking that luminescent material block is located at the second area forms;3rd illuminating part, the 3rd luminous site is in described Three regions, the 3rd illuminating part are the part that the second luminescent material block is located at the 3rd region;4th illuminating part, institute State the 4th luminous site and the 4th area is located at by the second luminescent material block in the 4th region, the 4th illuminating part The part in domain is located at four-range part stacking with the 3rd luminescent material block and formed;And the 5th illuminating part, described In the 5th region, the 5th illuminating part is that the 3rd luminescent material block is located at the 5th region for five luminous sites Part;Electron transfer layer;Electron injecting layer;And cathode layer;The luminous material layer is other including first layer, and described first is luminous During material block, the second luminescent material block and the 3rd luminescent material block are respectively positioned on the first layer not;First hair The part that luminescent material block is located at the second area has the first breach, and the second luminescent material block is located at the second area Part there is the second breach, first breach and second breach are oppositely arranged;The second luminescent material block is located at The four-range part has the 3rd breach, and the 3rd luminescent material block, which is located at the four-range part, has the Four breach, the 3rd breach and the 4th breach are oppositely arranged.
In above-mentioned display panel, the first luminescent material block is located at the first area and the second area;Institute State the second luminescent material block and be located at the second area, the 3rd region and the 4th region;3rd luminescent material Block is located at the 4th region and the 5th region.
In above-mentioned display panel, the luminous material layer includes the second layer not and third layer is other, the described first luminous material During material block and the 3rd luminescent material block are respectively positioned on the second layer not, the second luminescent material block is located at the third layer Not in.
In above-mentioned display panel, the luminous material layer include the 4th layer not, layer 5 is other and layer 6 is other, described the During one luminescent material block is located at described 4th layer not, during the second luminescent material block is located at the layer 5 not, the described 3rd During luminescent material block is located at the layer 6 not.
In above-mentioned display panel, the first luminescent material block, the second luminescent material block, the 3rd luminous material Material block is one of red illuminating material block, green luminescent material block, blue emitting material block, also, described first is luminous Material block, the second luminescent material block, the 3rd luminescent material block are different.
In above-mentioned display panel, the first luminescent material block is the red illuminating material block, the green emitting One of material block, the 3rd luminescent material block are in the red illuminating material block, the green luminescent material block Another one, the second luminescent material block are the blue emitting material block.
In above-mentioned display panel, the first luminescent material block, the second luminescent material block, the 3rd luminous material Expect that block is formed by material of main part and luminescent material, the luminescent material is doped in the material of main part;Wherein, described first The material of main part of luminescent material block, the material of main part of the second luminescent material block, the material of main part of the 3rd luminescent material The luminescent material of all same, the luminescent material of the first luminescent material block and the 3rd luminescent material block is phosphorescence material Material, the luminescent material of the second luminescent material block is fluorescent material.
In above-mentioned display panel, the display unit also includes:Switching device layer, the switching device layer include:The One thin film transistor switch, the first film transistor switch are connected with the first anode;Second thin film transistor switch, Second thin film transistor switch is connected with the second plate;3rd thin film transistor switch, the 3rd film crystal Pipe switch is connected with the third anode;4th thin film transistor switch, the 4th thin film transistor switch and the described 4th Anode connects;And the 5th thin film transistor switch, the 5th thin film transistor switch are connected with the 5th anode.
Compared with the prior art, the present invention advantageously allows the smaller of the pixel of display panel, improves display panel Resolution ratio, that is to say, that improve the display quality of display panel.
For the above of the present invention can be become apparent, preferred embodiment cited below particularly, and coordinate institute's accompanying drawings, make Describe in detail as follows.
【Brief description of the drawings】
Fig. 1 is the schematic diagram of the first embodiment of the display panel of the present invention;
Fig. 2 is the schematic diagram of the second embodiment of the display panel of the present invention;
Fig. 3 is the schematic diagram of the 3rd embodiment of the display panel of the present invention;
Fig. 4 is the schematic diagram of the chromaticity coordinates of each sub-pixel in display panel of the invention.
【Embodiment】
Word used in this specification " embodiment " means example, example or illustration.In addition, this specification and appended power Profit require used in article " one " can usually be interpreted " one or more ", unless otherwise or from context It can understand and determine singulative.
The display panel of the present invention can be OLED (Organic Light Emitting Diode, organic light-emitting diodes Pipe display panel) etc..
With reference to figure 1, Fig. 1 is the schematic diagram of the first embodiment of the display panel of the present invention.
The display panel of the present embodiment includes an at least display unit, and the display unit is divided into first area 101, Two regions 102, the 3rd region 103, the 4th region 104 and the 5th region 105, the first area 101, the second area 102nd, the 3rd region 103, the 4th region 104 and the 5th region 105 are arranged in order.
The display unit includes substrate 111, switching device layer 112, anode layer 113, hole injection layer 114, hole biography Defeated layer 115, luminous material layer 116, electron transfer layer 117, electron injecting layer 118, cathode layer 119.The switching device layer 112 It is arranged between the substrate 111 and the anode layer 113, the hole injection layer 114 is arranged at the anode layer 113 and institute Between stating hole transmission layer 115, the luminous material layer 116 is arranged at the hole transmission layer 115 and the electron transfer layer Between 117, the electron injecting layer 118 is arranged between the electron transfer layer 117 and the cathode layer 119.
The anode layer 113 includes the first anode 1131, second plate 1132, third anode 1133, the 4th anode 1134 And the 5th anode 1135.The first anode 1131 is arranged at the first area 101, and the second plate 1132 is arranged at The second area 102, the third anode 1133 are arranged at the 3rd region 103, and the 4th anode 1134 is arranged at 4th region 104, the 5th anode 1135 are arranged at the 5th region 105.
The luminous material layer 116 includes the first illuminating part 1161, the second illuminating part 1162, the 3rd illuminating part 1163, the Four illuminating parts 1164 and the 5th illuminating part 1165.First illuminating part 1161 is located at the first area 101, and described first Illuminating part 1161 is the part that the first luminescent material block is located at the first area 101.Second illuminating part 1162 is located at institute Second area 102 is stated, second illuminating part 1162 is located at the part of the second area 102 by the first luminescent material block The part stacking for being located at the second area 102 with the second luminescent material block forms.3rd illuminating part 1163 is positioned at described 3rd region 103, the 3rd illuminating part 1163 are the part that the second luminescent material block is located at the 3rd region 103. 4th illuminating part 1164 is located at the 4th region 104, and the 4th illuminating part 1164 is by the second luminescent material block The part stacking for being located at the 4th region 104 with the 3rd luminescent material block positioned at the part in the 4th region 104 forms.Institute State the 5th illuminating part 1165 and be located at the 5th region 105, the 5th illuminating part 1165 is the 3rd luminescent material block position In the part in the 5th region 105.That is, the first luminescent material block with the second luminescent material block described Second area 102 is overlapping, and the first luminescent material block is in the part of the second area 102 and the second luminescent material block Second illuminating part 1162, the second luminescent material block and the described 3rd hair are formed in the part of the second area 102 Luminescent material block is overlapping in the 4th region 104, the second luminescent material block the part in the 4th region 104 with it is described 3rd luminescent material block forms the 4th illuminating part 1164 in the part in the 4th region 104.
The switching device layer 112 includes first film transistor and switchs the 1121, second thin film transistor switch 1122, the Three thin film transistor switch 1123, the 4th thin film transistor switch 1124 and the 5th thin film transistor switch 1125.
The first film transistor switch 1121 is connected with the first anode 1131.Second thin film transistor (TFT) is opened 1122 are closed to be connected with the second plate 1132.3rd thin film transistor switch 1123 connects with the third anode 1133 Connect.4th thin film transistor switch 1124 is connected with the 4th anode 1134.5th thin film transistor switch 1125 are connected with the 5th anode 1135.
In the present embodiment, the first luminescent material block is located at the first area 101 and the second area 102. The second luminescent material block is located at the second area 102, the 3rd region 103 and the 4th region 104.Described Three luminescent material blocks are located at the 4th region 104 and the 5th region 105.
Wherein, the luminous material layer 116 includes first layer other 121, and the first luminescent material block, described second light Material block and the 3rd luminescent material block are respectively positioned in the first layer other 121.
In this case, the part that the first luminescent material block is located at the second area 102 has the first breach, The part that the second luminescent material block is located at the second area 102 has the second breach, first breach and described Two breach are oppositely arranged, and are aligned and be combined as second illuminating part 1162.The second luminescent material block is located at the described 4th The part in region 104 has the 3rd breach, and the part that the 3rd luminescent material block is located at the 4th region 104 has the 4th Breach, the 3rd breach and the 4th breach are oppositely arranged, and are aligned and be combined as the 4th illuminating part 1164.
In the present embodiment, the first luminescent material block, the second luminescent material block, the 3rd luminescent material block For one of red illuminating material block, green luminescent material block, blue emitting material block, also, first luminescent material Block, the second luminescent material block, the 3rd luminescent material block are different.
Preferably, the first luminescent material block is in the red illuminating material block, the green luminescent material block One, the 3rd luminescent material block are the red illuminating material block, the other of the green luminescent material block, described Second luminescent material block is the blue emitting material block.
In the present embodiment, the first luminescent material block, the second luminescent material block, the 3rd luminescent material block Formed by material of main part and luminescent material, the luminescent material is doped in the material of main part.
Wherein, the material of main part of the first luminescent material block, the material of main part of the second luminescent material block, described The material of main part all same of three luminescent materials, the luminescent material of the first luminescent material block and the 3rd luminescent material block Luminescent material is phosphor material, and the luminescent material of the second luminescent material block is fluorescent material.
In the present embodiment, the first luminescent material block, the second luminescent material block, the 3rd luminescent material block Formed by optical cover process.Mask corresponding to the optical cover process is fine metal mask (FMM, Fine Metal Mask)。
In the present embodiment, the display unit includes the first sub-pixel, the second sub-pixel, the 3rd sub-pixel, the 4th son Pixel and the 5th sub-pixel.The part that first sub-pixel is located at the first area 101 with the display unit is corresponding, institute Stating the first sub-pixel includes the first film transistor, the first anode 1131, the hole injection layer 114 positioned at described The part of first area 101, the hole transmission layer 115 are located at the part of the first area 101, first illuminating part 1161st, the electron transfer layer 117 is located at the part of the first area 101, the electron injecting layer 118 is located at described first The part in region 101, the cathode layer 119 are located at the part of the first area 101.
The part that second sub-pixel is located at the second area 102 with the display unit is corresponding, second son Pixel includes second thin film transistor (TFT), the second plate 1132, the hole injection layer 114 and is located at the second area 102 part, the hole transmission layer 115 are located at the part of the second area 102, second illuminating part 1162, described Electron transfer layer 117 is located at the part of the second area 102, the electron injecting layer 118 is located at the second area 102 Partly, the cathode layer 119 is located at the part of the second area 102.
The part that 3rd sub-pixel is located at the 3rd region 103 with the display unit is corresponding, the 3rd son Pixel includes the 3rd thin film transistor (TFT), the third anode 1133, the hole injection layer 114 and is located at the 3rd region 103 part, the hole transmission layer 115 are located at the part in the 3rd region 103, the 3rd illuminating part 1163, described Electron transfer layer 117 is located at the part in the 3rd region 103, the electron injecting layer 118 is located at the 3rd region 103 Partly, the cathode layer 119 is located at the part in the 3rd region 103.
The part that 4th sub-pixel is located at the 4th region 104 with the display unit is corresponding, the 4th son Pixel includes the 4th thin film transistor (TFT), the 4th anode 1134, the hole injection layer 114 and is located at the 4th region 104 part, the hole transmission layer 115 are located at the part in the 4th region 104, the 4th illuminating part 1164, described Electron transfer layer 117 is located at the part in the 4th region 104, the electron injecting layer 118 is located at the 3rd region 103 Partly, the cathode layer 119 is located at the part in the 4th region 104.
The part that 5th sub-pixel is located at the 5th region 105 with the display unit is corresponding, the 5th son Pixel includes the 5th thin film transistor (TFT), the 5th anode 1135, the hole injection layer 114 and is located at the 5th region 105 part, the hole transmission layer 115 are located at the part in the 5th region 105, the 5th illuminating part 1165, described Electron transfer layer 117 is located at the part in the 5th region 105, the electron injecting layer 118 is located at the 5th region 105 Partly, the cathode layer 119 is located at the part in the 5th region 105.
In the above-mentioned technical solutions, any one in first illuminating part 1161, second illuminating part 1162 Size (area) is respectively less than the size (area) of the first luminescent material block, second illuminating part 1162, the 3rd hair The size of any one (area) in light portion 1163, the 4th illuminating part 1164 is respectively less than the second luminescent material block Size (area), the size of any one (area) in the 4th illuminating part 1164, the 5th illuminating part 1165 are small In the size (area) of the 3rd luminescent material block, the first luminescent material block, the second luminescent material block and described 3rd luminescent material block can be made using FMM, it is assumed that the accessible minimum open dimensions of FMM (area) are S, then The minimum dimension (area) of the first luminescent material block, the second luminescent material block and the 3rd luminescent material block is S, So, first illuminating part 1161, second illuminating part 1162, the 3rd illuminating part 1163, the 4th illuminating part 1164 and the size (area) of the 5th illuminating part 1165 be respectively less than S, i.e. first sub-pixel, second sub-pixel, The size (area) of 3rd sub-pixel, the 4th sub-pixel and the 5th sub-pixel can reach than the FMM energy The minimum open dimension (area) accomplished wants small state.Above-mentioned technical proposal is advantageous to produce smaller pixel, carries The high resolution ratio of display panel, that is to say, that above-mentioned technical proposal is advantageous to significantly be lifted the display quality of display panel.
In addition, in the above-mentioned technical solutions, can be by controlling the second sub-pixel RB, the 4th sub-pixel GB institutes The light sent is combined into white light, so as to improve the brightness of the display panel, reduces energy consumption.
With reference to figure 4, Fig. 4 is the schematic diagram of the chromaticity coordinates of each sub-pixel in display panel of the invention.Assuming that described first Luminescent material block is red illuminating material block, and the second luminescent material block is blue emitting material block, the described 3rd luminous material Material block is green luminescent material block.Then in Fig. 4, the first sub-pixel R, the 3rd sub-pixel B, the 5th sub-pixel G chromaticity coordinates position Distribution is put positioned at three angles of triangle.4th sub-pixel GB is sent out by the green luminescent material block G light sent and blueness The light that luminescent material block B is sent combines in proportion, and the 4th sub-pixel GB chromaticity coordinates is located at the 5th sub-pixel G, the 3rd On the line of sub-pixel B chromaticity coordinates point.Second sub-pixel RB is sent out by the red illuminating material block R light sent and blueness The light that luminescent material block B is sent combines in proportion, and the second sub-pixel RB chromaticity coordinates is located at the first sub-pixel R, the 3rd On the line of sub-pixel B chromaticity coordinates point.Second sub-pixel RB, the 4th sub-pixel GB line of chromaticity coordinates can pass through white light W Chromaticity coordinates region., can be by the second sub-pixel RB, the 4th son by controlling the second sub-pixel RB, the 4th sub-pixel GB GTG The chromaticity coordinates of pixel GB mixed light falls in white light W chromaticity coordinates position.
With reference to figure 2, Fig. 2 is the schematic diagram of the second embodiment of the display panel of the present invention.The present embodiment and above-mentioned first Embodiment is similar, and difference is:
In the present embodiment, the luminous material layer 116 includes the second layer other 122 and third layer other 123, first hair Luminescent material block and the 3rd luminescent material block are respectively positioned in the second layer other 122, and the second luminescent material block is located at institute State in third layer other 123.
With reference to figure 3, Fig. 3 is the schematic diagram of the 3rd embodiment of the display panel of the present invention.The present embodiment and above-mentioned first Embodiment is similar, and difference is:
In the present embodiment, it is other to include the 4th layer other 124, layer 5 other 125 and layer 6 for the luminous material layer 116 126, the first luminescent material block is located in described 4th layer other 124, and the second luminescent material block is located at the layer 5 In other 125, the 3rd luminescent material block is located in the layer 6 other 126.
Although the present invention, those skilled in the art have shown and described relative to one or more implementations Based on the reading to the specification and drawings and understand it will be appreciated that equivalent variations and modification.The present invention includes all such repair Change and modification, and be limited only by the scope of the following claims.In particular, to the various functions performed by said modules, use Being intended to correspond to the specified function of performing the component in the term of component as description, (such as it is functionally of equal value ) random component (unless otherwise instructed), with performing the exemplary realization of this specification shown in this article in structure The open structure of function in mode is not equivalent.In addition, although the special characteristic of this specification is relative to some realization sides Only one in formula is disclosed, but this feature can with as can be it is expected and favorably for given or application-specific Other one or more combinations of features of other implementations.Moreover, with regard to term " comprising ", " having ", " containing " or its deformation For being used in embodiment or claim, such term is intended to the bag in a manner of similar to term "comprising" Include.
In summary, although the present invention is disclosed above with preferred embodiment, above preferred embodiment simultaneously is not used to limit The system present invention, one of ordinary skill in the art, without departing from the spirit and scope of the present invention, it can make various changes and profit Decorations, therefore protection scope of the present invention is defined by the scope that claim defines.

Claims (8)

1. a kind of display panel, it is characterised in that the display panel includes:
An at least display unit, the display unit are divided into first area, second area, the 3rd region, the 4th region and Five regions, the display unit include:
Anode layer, the anode layer include:
The first anode, the first anode are arranged at the first area;
Second plate, the second plate are arranged at the second area;
Third anode, the third anode are arranged at the 3rd region;
4th anode, the 4th anode are arranged at the 4th region;
And
5th anode, the 5th anode are arranged at the 5th region;
Hole injection layer;
Hole transmission layer;
Luminous material layer, the luminous material layer include:
First illuminating part, in the first area, first illuminating part is the first luminescent material block for first luminous site Positioned at the part of the first area;
Second illuminating part, second luminous site is in the second area, and second illuminating part is by the described first luminous material Material block be located at the part of the second area and the second luminescent material block is located at the part stacking of the second area and formed;
3rd illuminating part, in the 3rd region, the 3rd illuminating part is the described second luminous material for the 3rd luminous site Material block is located at the part in the 3rd region;
4th illuminating part, the 4th luminous site is in the 4th region, and the 4th illuminating part is by the described second luminous material Material block, which be located at the four-range part and the 3rd luminescent material block and is located at four-range part stacking, to be formed;And
5th illuminating part, in the 5th region, the 5th illuminating part is the described 3rd luminous material for the 5th luminous site Material block is located at the part in the 5th region;
Electron transfer layer;
Electron injecting layer;And
Cathode layer;
It is other that the luminous material layer includes first layer, the first luminescent material block, the second luminescent material block and described the During three luminescent material blocks are respectively positioned on the first layer not;
The part that the first luminescent material block is located at the second area has the first breach, the second luminescent material block position There is the second breach in the part of the second area, first breach and second breach are oppositely arranged;
The second luminescent material block, which is located at the four-range part, has the 3rd breach, the 3rd luminescent material block position There is the 4th breach in the four-range part, the 3rd breach and the 4th breach are oppositely arranged.
2. display panel according to claim 1, it is characterised in that the first luminescent material block is located at firstth area Domain and the second area;
The second luminescent material block is located at the second area, the 3rd region and the 4th region;
The 3rd luminescent material block is located at the 4th region and the 5th region.
3. display panel according to claim 1 or 2, it is characterised in that the luminous material layer include the second layer not and Third layer is other, during the first luminescent material block and the 3rd luminescent material block are respectively positioned on the second layer not, described second During luminescent material block is located at the third layer not.
4. display panel according to claim 1 or 2, it is characterised in that the luminous material layer include the 4th layer not, the Five layers not and layer 6 it is other, the first luminescent material block be located at described 4th layer not in, the second luminescent material block is located at The layer 5 not in, during the 3rd luminescent material block is located at the layer 6 not.
5. display panel according to claim 1, it is characterised in that the first luminescent material block, described second light Material block, the 3rd luminescent material block are one in red illuminating material block, green luminescent material block, blue emitting material block Person, also, the first luminescent material block, the second luminescent material block, the 3rd luminescent material block are different.
6. display panel according to claim 5, it is characterised in that the first luminescent material block is the emitting red light One of material block, described green luminescent material block, the 3rd luminescent material block are the red illuminating material block, described The other of green luminescent material block, the second luminescent material block are the blue emitting material block.
7. display panel according to claim 6, it is characterised in that the first luminescent material block, described second light Material block, the 3rd luminescent material block are formed by material of main part and luminescent material, and the luminescent material is doped in the master In body material;
Wherein, the material of main part of the first luminescent material block, the material of main part of the second luminescent material block, the 3rd hair The material of main part all same of luminescent material, the luminescent material of the first luminescent material block and the 3rd luminescent material block light Material is phosphor material, and the luminescent material of the second luminescent material block is fluorescent material.
8. display panel according to claim 1, it is characterised in that the display unit also includes:
Switching device layer, the switching device layer include:
First film transistor is switched, and the first film transistor switch is connected with the first anode;
Second thin film transistor switch, second thin film transistor switch are connected with the second plate;
3rd thin film transistor switch, the 3rd thin film transistor switch are connected with the third anode;
4th thin film transistor switch, the 4th thin film transistor switch are connected with the 4th anode;And
5th thin film transistor switch, the 5th thin film transistor switch are connected with the 5th anode.
CN201510562474.XA 2015-09-07 2015-09-07 Display panel Active CN105226076B (en)

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