CN105225939B - Improve the method for the polishing wafer uniformity - Google Patents
Improve the method for the polishing wafer uniformity Download PDFInfo
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- CN105225939B CN105225939B CN201410236044.4A CN201410236044A CN105225939B CN 105225939 B CN105225939 B CN 105225939B CN 201410236044 A CN201410236044 A CN 201410236044A CN 105225939 B CN105225939 B CN 105225939B
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Abstract
The present invention relates to a kind of methods for improving the polishing wafer uniformity, essentially consist in the zone of reasonableness of determining initial speed ω, and under a certain given initial speed ω value, control the revolving speed of other each points in X-axis to realize the purpose for carrying out uniform polish to wafer.Corresponding ω value is chosen according to the method for the present invention, wafer is polished according to the polishing mode that this method determines simultaneously, wafer after can guaranteeing polishing meets wafer uniformity requirement in " the V-arrangement looks " of central area, the each point other than central area also can be polished uniformly simultaneously, substantially increase the yields of subsequent product manufacture.
Description
Technical field
The present invention relates to semi-conductor electricity subdomains, more specifically to a kind of method for improving the polishing wafer uniformity.
Background technique
In semiconducter process, when carrying out non-stress polishing processing to wafer, control crystal column surface polishes uniform
Everywhere, the thickness that the center and peripheral region of especially wafer is skimmed is suitable, to subsequent work for degree, as much as possible guarantee crystal column surface
Skill goes on smoothly and all has outstanding meaning to the raising of product yield.
In existing SFP (Stress-free-polish) technology, vacantly using wafer (wafer), two poles point
The polishing fluid connection not sprayed by spray head is on wafer, and in actual polishing process, wafer is first in vertical direction
Reach polishing position, then carry out the rotary motion and translational motion in horizontal direction, to reach the mesh of global polishing uniformity
's.In this process, when polishing fluid spray head reaches wafer different radii position, polishing point is in wafer fixed disk
(chuck) circle ring area where can polishing radius under the action of rotating causes since radius size is different in same rotational speed
Under, the area size polished in the unit time is not just identical, then under the action of identical current density, the metal layer skimmed
(generally layers of copper) thickness will be different；On the other hand, it since the liquid outlet of polishing fluid spray head has certain area, is polishing
When the position of crystal circle center, since current density is unevenly distributed, it just will appear some special " V at the wafer polishing center of circle
Pattern ".It can be seen that the different appearance with " V " type polishing pattern of polishing speed can all cause the uniformity of polishing to be deteriorated.
Summary of the invention
It is an object of the present invention in SFP technical process, by the speed of rotation ω, Lai Tigao that rationally adjust chuck
To the uniformity of polishing wafer；Further, the zone of reasonableness of determining ω is also resided in, with reduction " V-arrangement looks " to wafer uniform
The influence of property.
In order to achieve the above object, the method applied in the present invention includes the following steps:
(1) a polishing chamber is provided, includes at least a wafer fixed disk and a polishing fluid spray head, institute in the working chamber
Stating wafer fixed disk has the freedom degree around the straight line Y rotation perpendicular to disk and across the fixed disk center O of wafer, the wafer
Fixed disk at least can its planar along one cross center O rectilinear direction X relative to polishing fluid spray head translate；
(2) wafer is fixed on the fixed panel surface of the wafer, the center of the wafer and the wafer fixed disk
Center O be in together on straight line Y；
(3) relative initial position for adjusting the wafer fixed disk and polishing fluid spray head, makes in the polishing fluid spray head
The heart and the center O of wafer fixed disk are in together on straight line Y；
(4) it is ω that the wafer fixed disk, which is arranged, around the initial speed that straight line Y rotates；
(5) Xiang Suoshu polishing chamber energizes, and drives the wafer fixed disk to rotate around straight line Y, while along straight line side
It is translated to X relative to the polishing fluid spray head, the wafer is polished, in the central area for polishing the wafer
When, the revolving speed of the wafer fixed disk meets the relationship of ω x=ω, at the part other than wafer polishing central area, wafer
The revolving speed of fixed disk meets ω x=(a/RX) * ω relationship；
(6) stop the energy supply to polishing chamber and the polishing removal thickness of the wafer surface everywhere is surveyed
Amount；
(7) according to the measurement result of step (6), judge whether " V-arrangement looks " feature resulting under the revolving speed of the ω meets
Wafer uniformity requirement；
(8) according to the judging result of step (7), if " V-arrangement looks " are unsatisfactory for wafer uniformity requirement under the revolving speed of ω,
Step (3)-(7) are then repeated, wherein give initial speed ω ', ω ' the > ω again in step (4), until obtain
Initial speed ω min, " the V-arrangement looks " generated at this initial speed ω min meet wafer uniformity requirement；
(9) according to the judging result of step (7), if " V-arrangement looks " meet wafer uniformity requirement under the revolving speed of ω,
Step (3)-(7) are repeated, wherein initial velocity ω ", ω " the < ω are given again in step (4), until obtaining initial
Rotational speed omega min, " the V-arrangement looks " generated at this initial speed ω min have been unable to meet wafer uniformity requirement；
(10) ω min and ω max are recorded, the ω max is wafer fixed disk maximum (top) speed allowed, to obtain
Meet the zone of reasonableness of the initial speed ω of wafer uniformity requirement；
(11) it within the scope of step (10) determine, chooses a value and wafer is polished；
Wherein, the ω x is that wafer fixed disk moves to wafer fixed disk corresponding revolving speed when certain is put on straight line X, a
It is the side length of polishing fluid spray head, the Rx is the center O of wafer fixed disk along the position that straight line X occurs relative to polishing fluid spray head
It moves, the central area of the wafer refers to the region for being less than polishing fluid spray head side length on wafer using center O as the center of circle and radius.
Detailed description of the invention
Fig. 1 is to study the illustraton of model that the method for the present invention is established；
Fig. 2 is the schematic diagram of spray head and the variation of the relative position chuck in the present invention；
Fig. 3 is a=20mm, under the conditions of R=150mm, when giving an initial speed ω=300RPM, and X-axis forward direction each point
Angular velocity omega x and position x corresponding relationship schematic diagram；
Fig. 4 be with Fig. 3 under the same conditions, the polishing removal thickness and x pairs of position of crystal column surface each point along the x axis
The schematic diagram that should be related to；
It is identical that Fig. 5 is to maintain other conditions in Fig. 4, when only giving an initial speed ω=500RPM again, wafer table
Face along the x axis each point polishing removal thickness and position x corresponding relationship schematic diagram；
It is identical that Fig. 6 is to maintain other conditions in Fig. 5, when only giving an initial speed ω=700RPM again, wafer table
Face along the x axis each point polishing removal thickness and position x corresponding relationship schematic diagram；
Fig. 7 is the step block diagram of the method for the present invention specific embodiment；
Fig. 8 is the pattern schematic diagram of the crystal column surface polished according to the specific embodiment of Fig. 7 to wafer.
Specific embodiment
The principle for solving technical problem below for the method for the present invention is disclosed:
1, model as shown in Figure 1 is established, the cathode of power supply 11 is connected to cathode spray head 12, and 11 anode of power supply is connected to crystalline substance
13 edges of circle；The polishing fluid 14 that the polishing fluid spray head 12 of cathode sprays reaches 13 surface of wafer, for convenience of calculation, it will be assumed that
The square that the liquid significant surface that spray head 12 sprays is a*a (closing by the side length that a is square, the shape and size of another spray head 12
Manage and change in range and will not generate fundamental effect to the correctness of following conclusions), which can approximatively be considered polishing fluid
The area of spray head 12,13 surface of wafer have metal layer (generally layers of copper).Material is thus formed circuits, when 11 loading of power supply
When, 13 surface of wafer can react with polishing fluid 14, the equation of electronics transfer are as follows: Cu-2e-=Cu2-,2H++2e-=
H2.In this way, the layers of copper on 13 surface of wafer will be polished the polishing of liquid 14.
2, as shown in Figure 1, in polishing process, wafer 13 rotates in the horizontal direction, at the same in the horizontal direction relative to
The polishing fluid spray head 12 of cathode forms the displacement of X-direction, realizes the polishing of 13 surface global of wafer.
3, as shown in Fig. 2, when spray head is moved to the wafer point position A, instantaneous polishing point also in wafer location A, then by
There is turning effort in wafer 13, polishing area is circular A polishing area 21, if annular radii is ROA；When spray head is moved to
When the wafer point position B, instantaneous polishing point is also in wafer B location, and polishing area is circular B polishing area 22, if annulus
Radius is ROB；
4, when being located at the wafer point position A, the angular speed that wafer 13 rotates is ωOA；Then spray head is at the wafer point position A,
The wafer area that unit time is inswept is SOA=ROA*ωOA*a；Similarly, for spray head at the wafer point position B, the unit time is inswept
Wafer area be SOB=ROB*ωOB*a；Due to ROA<ROB, assume ωOA=ωOB；Then SOA<SOB。
5, because electric current uses constant-current source, then the total metal content skimmed in the device unit time is certain.But
According to above-mentioned 4 it is found that the device works as ω when on 13 different radii position of waferOA=ωOBWhen, the area of unit time polishing
Be it is different, which results in unit area, the metal thickness of device polishing is different.In order to guarantee uniformity, just
It is required that SOA=SOB, i.e. ROA*ωOA* a=ROB*ωOB*a；ω can be releasedOB=(ROA/ROB)*ωOA。
6, in entire polishing process, we set up a virtual X-axis in spray head horizontal rectilinear motion side, if brilliant
The center of circle O point of circle 13 is 0 position of X-axis, if the direction of motion of spray head is the positive direction of X-axis.Chuck rotation is arranged in we now
The relationship of rotary speed X-axis corresponding with spray head position: when (1) setting technical process and starting, the starting point of spray head is O point, chuck just
Beginning revolving speed is as initial speed ω (RPM)；During spray head reaches A point from O point, chuck remains a constant speed rotary motion, turns
Speed maintains ω always, it is desirable that 0≤ROA≤ a, a are the side length of effective liquid level of spray head；(2) when spray head moves to B point from A point
In the process, the angular speed of chuck according to above-mentioned 5 description, it is desirable that keep ωOB=(ROA/ROB)*ωOAThat is ωOB=(ROA/ROB)*
The relationship of ω, it is desirable that ROA≤ROB≤ R (radius that R is wafer).According to the above-mentioned available chuck angular speed of relationship and spray
It is thick can to guarantee that spray head moves to the layers of copper skimmed everywhere in B point process from A point under this relational expression for the relationship of the corresponding X-axis of head
Spend identical, (this a=20mm for being as shown in Figure 3；Gained under the conditions of R=150mm).Extraly, from motion composition angle
For, we, which can set in X-axis, an x point, the instantaneous angular speed of the point and be respectively ω along the speed that X-axis movesxAnd Vx, it is
Guarantee crystal column surface each point can be polished by spray head, and spray head does not leak throwing point in crystal column surface, then ωxAnd VxIt should meetRelational expression, i.e., above-mentioned inference (1), (2) set up basis be ωxAnd VxIt should meetIt can see
It arrives, at O to A sections of Fig. 2, due to the non-uniform influence of spray head current density, ωOAIt needs to maintain under initial speed ω, without
It is able to satisfy relationship described in (2), this is also " V-arrangement looks " Producing reason；And when we are given an initial rotational speed omega
Later, at A to B sections, as long as adjusting revolving speed meets ωOB=(ROA/ROB)*ωOAThat is ωOB=(ROA/ROB) * ω relationship, energy
Enough guarantee that the thickness of A to B sections of each point polishing is identical, to ensure that the uniformity of A to B sections of polishing, and it is apparent that ωOB<
ωOA." V " shape looks said before, in particular to inconsistent due to polishing speed, cause more to lean in the central area of wafer 13
The copper that the position of 13 center O of smectic circle is skimmed is fewer, namely the residual thickness of the position wafer 13 closer to 13 center O of wafer is got over
Greatly, and due to being face down when wafer 13 is fixed on chuck, so when facing wafer 13 at this time, 13 surface of wafer
The protrusion of approximation " V " type will be formed within the scope of central area, it for convenience, can be fixed by the protrusion of this " V " type
Justice is " V-arrangement looks " feature of wafer 13.
7 and in order to reduce the influence of O to A sections " V-arrangement looks " to wafer uniformity, inventor is found through experiments that, improve just
Beginning rotational speed omega has positive influence to the elimination or reduction of " V-arrangement looks ".Thus it needs to be determined that the zone of reasonableness of ω, as shown in figure 4,
The polishing curve graph made when we set ω=300RPM under certain process conditions, since spray head has certain area, and
Chuck rotate when center origin be substantially it is motionless, which results in the V-type indicated in figure polishing pattern, this " V " type
Pattern is difficult to reconcile in the case where not changing chuck revolving speed, causes polishing uniformity poor.It can see in figure, it will be initial
Revolving speed is set as ω=300RPM and polishes by 6 rules to wafer, the polishing of obtained O point removal with a thickness ofAnd the part other than crystal circle center region, polishing removal thickness reach" V-arrangement looks " feature at this time is discontented
Our indexs to wafer uniformity of foot, because the polishing removal thickness of O point is only each point other than wafer central area at this time
The 80% of the average value of polishing removal thickness, the marginal requirements less than 90%, therefore we need to further increase initial speed
ω。
8, as shown in figure 5, under above-mentioned 7 identical process conditions and process, initial speed ω is only improved, at this time
ω=500RPM, as can be seen from the figure " V " the type polishing pattern of crystal circle center's point is obviously improved, and in the revolving speed
Under, the polishing of O point removal with a thickness ofAnd central area with the polishing of outer portion removal with a thickness ofAt this time
" V-arrangement looks " feature has met our indexs to wafer uniformity, other than the polishing of O point removes with a thickness of wafer central area
The 90% of the average value of each point polishing removal thickness, has reached marginal requirements, i.e., under this initial speed, " V-arrangement looks " can
Enough meet our requirements to wafer uniformity.As shown in fig. 6, ω=700RPM at this time, as can be seen from the figure crystal circle center
" V " the type polishing pattern of point O is smaller, and polishing uniformity has obtained further raising.
Although 9, theoretically, the ω the big more facilitates the elimination of " V-arrangement looks ", the intensity by mechanical structure is limited,
And prevent chuck from acutely shaking because of high speed rotation, so ω has on one the considerations of stability when for chuck rotation
Limit, i.e., corresponding polishing apparatus allow the maximum (top) speed of its interior chuck rotation, and providing inventor's instrument here allows
The maximum (top) speed of chuck rotation, it is for reference: ω max=1500RPM.So the zone of reasonableness in order to determine ω, Wo Menke
It is polished so that an initial revolving speed is first arranged, test result, the value of ω is improved if polishing pattern centre " V " type is larger,
Continue verifying " V " type among polishing pattern to disappear or smaller and reach uniformity requirement；Using the maximum value of above-mentioned ω as base
Plinth, slowly reduces revolving speed until finding lower ω revolving speed, same to meet " V " type among polishing pattern and disappear or smaller and reach
Uniformity requirement.
10, in summary, our available following chuck angular velocity omegas correspond to the relationship of X axis coordinate x with spray head: I
In the zone of reasonableness of previously determined initial speed ω, pick out a determining ω value, using this ω as initial speed:
ω x=ω is wherein: 0≤ROX≤ROA=a；A is the side length that spray head sprays liquid level, i.e., at O-A sections with initial speed
ω uniform rotation；
ω x=(ROA/ROX) * ω wherein: ROA=a≤ROX≤ R, i.e., and when chuck horizontal movement is more than A point, into A-B
ω x is by this rule variation when section；
Chuck is continuously, it is right according to above-mentioned rule to adjust chuck revolving speed from O-A sections, then by the whole process of section A-B
Wafer is polished, and " the V-arrangement looks " of crystal circle center can be made to meet the requirements, and the most areas other than central area is thrown
The thickness gone is identical, thus just improves the polishing uniformity of wafer.
In summary technical solution, it can be seen that the present invention does not only give the reasonable model of determining chuck initial speed ω
The method enclosed gives under the initial speed ω value of a certain determination, the corresponding relationship of rotational speed omega x corresponding to X-axis each point,
Make it possible that those skilled in the art improve the polishing uniformity of wafer during SFP by adjusting chuck revolving speed.
In order to help those skilled in the art to more fully understand the method for the present invention, below with reference to a specific embodiment and figure
7-8 is further described the technical solution:
As shown in fig. 7, being the step block diagram of specific embodiment of the present invention.
(1) firstly, providing a polishing chamber, which includes a wafer fixed disk and polishing fluid spray head, the crystalline substance
Circle fixed disk can fix disk center O around wafer is passed through and rotate perpendicular to the straight line Y of disk, meanwhile, the wafer fixed disk is also
It being capable of translating radially with respect to polishing fluid spray head along wafer fixed disk；
(2) wafer fixed disk is manipulated, wafer, the center of the wafer and the center of wafer fixed disk are drawn and fix
O is in together on straight line Y；
(3) relative initial position for adjusting wafer fixed disk and polishing fluid spray head, makes center and the wafer of polishing fluid spray head
The center O of fixed disk is in together on straight line Y；
(4) the initial velocity ω that setting wafer fixed disk is rotated around straight line Y, such as ω=1000RPM or ω=300RPM；
(5) to polishing chamber energize, driving wafer fixed disk around straight line Y rotate, while along straight line X-direction relative to
The translation of polishing fluid spray head, polishes wafer, at the central area of wafer polishing, the revolving speed of wafer fixed disk meets ω x
The relationship of=ω, at the part other than wafer polishing central area, the revolving speed of wafer fixed disk meets ω x=(a/RX)*ω
Relationship；
(6) stop energizing to polishing chamber and the polishing removal thickness of crystal column surface everywhere is measured；
(7) according to the measurement result of step (6), judge whether resulting under the revolving speed of the ω " V-arrangement looks " meet wafer
Uniformity requirement；
(8) it according to the judging result of step (7), finds under the revolving speed of ω=300RPM, feature is or not " the V-arrangement looks " of generation
Meet wafer uniformity requirement, i.e. the polishing removal thickness of O point is only each point polishing removal thickness other than crystal circle center region
The 80% of average value wherein gives initial velocity ω " so repeating step (3)-(7) again in step (4), the ω " is greater than
300RPM finally obtains ω min=500RPM, and under this revolving speed, " the V-arrangement looks " of generation meet just to wafer uniformity requirement
Index minimum, if continue improve initial speed ω, " the V-arrangement looks " of wafer can meet wafer uniformity and want after polishing
It asks, and " V-arrangement looks " can be smaller and smaller；
(9) according to the judging result of step (7), " V-arrangement looks " feature of generation under the revolving speed of ω=1000RPM is found
Meet the uniformity requirement of wafer, i.e. the polishing removal thickness of O point reaches each point polishing removal thickness other than crystal circle center region
Average value 97.3%, so repeat step (3)-(7), wherein in step (4) again give initial velocity ω ', the ω '
Less than 1000RPM, ω min=500RPM is finally obtained, under this revolving speed, " the V-arrangement looks " of generation are down to meeting wafer
The minimum of the index of uniformity requirement, if reducing initial speed ω again, serious " V-arrangement looks " are will be present in the wafer after polishing
Feature influences the yields of subsequent product；
(10) ω min and ω max are recorded, the ω max is wafer fixed disk maximum (top) speed allowed, ω max=
1500RPM, so that the zone of reasonableness for obtaining initial speed ω is 500-1500RPM；
(11) step (10) determine within the scope of, choose ω=800RPM, by step (5) mode to wafer into
Row polishing.
Above-mentioned specific embodiment is in polishing fluid spray head side length a=20mm, wafer radius R=150mm, and ωxAnd VxIt is full
FootUnder conditions of carry out.
Fig. 8 is under the above conditions, to show when choosing ω=800RPM the pattern of the crystal column surface obtained after polishing wafer
It is intended to.It can be seen that before polishing, the original thickness of wafer is everywhereAfter above-mentioned polishing process,
Other than the central area of wafer, each point is skimmedAnd polishing removal thickness is less than in central area
So being centrally formed " V-arrangement looks " feature such as figure in wafer.But according to above-mentioned analysis it is found that because of ω=
800RPM is greater than ω min=500RPM, so " V-arrangement looks " at this time are characterized in meeting to wafer uniformity requirement.
The claims book and content recorded in specification are intended to be described in detail the design of technical solution of the present invention
Be intended to, action principle and progress effect, mentioned in partial parameters and step, be convenient for public understanding summary of the invention institute
With can not protection scope for the purpose of limiting the invention.For the basis of technical solution of the present invention up conversion data or wait
Effect replacement some of which step, is regarded as falling within the scope and spirit of the invention.
Claims (10)
1. a kind of method for improving the polishing wafer uniformity, which comprises the following steps:
(1) a polishing chamber is provided, includes at least a wafer fixed disk and a polishing fluid spray head, the crystalline substance in the working chamber
Circle fixed disk has the freedom degree around the straight line Y rotation perpendicular to disk and across the fixed disk center O of wafer, and the wafer is fixed
Disk at least can its planar along one cross center O rectilinear direction X relative to polishing fluid spray head translate；
(2) wafer is fixed on the fixed panel surface of the wafer, in the center of the wafer and the wafer fixed disk
Heart O is in together on straight line Y；
(3) relative initial position for adjusting the wafer fixed disk and polishing fluid spray head, make the polishing fluid spray head center and
The center O of wafer fixed disk is in together on straight line Y；
(4) it is ω that the wafer fixed disk, which is arranged, around the initial speed that straight line Y rotates；
(5) Xiang Suoshu polishing chamber energizes, and drives the wafer fixed disk to rotate around straight line Y, while along rectilinear direction X phase
The polishing fluid spray head is translated, the wafer is polished, it is described when polishing the central area of the wafer
The revolving speed of wafer fixed disk meets the relationship of ω x=ω, at the part other than wafer polishing central area, wafer fixed disk
Revolving speed meets ω x=(a/RX) * ω relationship；
(6) stop the energy supply to polishing chamber and the polishing removal thickness of the wafer surface everywhere is measured；
(7) according to the measurement result of step (6), judge whether " V-arrangement looks " feature resulting under the revolving speed of the ω meets wafer
Uniformity requirement；
(8) it according to the judging result of step (7), if " V-arrangement looks " are unsatisfactory for wafer uniformity requirement under the revolving speed of ω, weighs
Multiple step (3)-(7), wherein initial speed ω ', ω ' the > ω are given again in step (4), until obtaining initial
Rotational speed omega min, " the V-arrangement looks " generated at this initial speed ω min meet wafer uniformity requirement；
(9) it according to the judging result of step (7), if " V-arrangement looks " meet wafer uniformity requirement under the revolving speed of ω, repeats
Step (3)-(7), wherein initial velocity ω ", ω " the < ω are given again in step (4), until obtaining initial speed
ω min, " the V-arrangement looks " generated at this initial speed ω min have been unable to meet wafer uniformity requirement；
(10) ω min and ω max are recorded, the ω max is wafer fixed disk maximum (top) speed allowed, to be met
The zone of reasonableness for the initial speed ω that wafer uniformity requires；
(11) it within the scope of step (10) determine, chooses a value and wafer is polished；
Wherein, the ω x is that wafer fixed disk moves to wafer fixed disk corresponding revolving speed when certain is put on straight line X, and a is to throw
The side length of light liquid spray head, the Rx are the displacement that the center O of wafer fixed disk occurs along straight line X relative to polishing fluid spray head, institute
The central area for stating wafer refers on wafer using center O as the center of circle and radius is less than the region of the side length of polishing fluid spray head.
2. the method according to claim 1, wherein " V-arrangement looks " described in step (7) meet wafer uniformity
Index be center O polishing removal thickness be other than wafer central area each point polishing removal thickness average value 90% and
More than.
3. the method according to claim 1, wherein the polishing of wafer surface everywhere described in step (6) is gone
Except thickness is measured using four probe machines.
4. the method according to claim 1, wherein wafer fixed disk described in step (1) is vacuum chuck.
5. the method according to claim 1, wherein plane where wafer in step (5) described polishing process
There are the spacing of 2mm for plane with where the nozzle of polishing fluid spray head.
6. the method according to claim 1, wherein the center O of wafer fixed disk described in step (1) is by initial
Make change speed linear motion relative to polishing fluid spray head along straight line X in position.
7. the method according to claim 1, wherein polishing fluid used in step (1)-(6) is acid molten
Liquid, the range of viscosities of the acid solution is in 5-20cp.
8. the method according to claim 1, wherein the side length of the polishing fluid spray head is 20mm, wafer half
Diameter is 150mm, and the ratio of the area of the area and wafer of polishing fluid spray head is 0.02%-0.6%.
9. the method according to claim 1, wherein wafer fixed disk described in step (10) is allowed most
Big rotational speed omega max is 1500RPM.
10. the method according to claim 1, wherein the range of ω described in step (10) is 300RPM-
1500RPM。
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| CN103692293A (en) * | 2012-09-27 | 2014-04-02 | 盛美半导体设备（上海）有限公司 | Stress-free polishing device and polishing method |
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| CN105225939A (en) | 2016-01-06 |
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