CN105220121B - A kind of target material assembly and preparation method thereof - Google Patents
A kind of target material assembly and preparation method thereof Download PDFInfo
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- CN105220121B CN105220121B CN201510706333.0A CN201510706333A CN105220121B CN 105220121 B CN105220121 B CN 105220121B CN 201510706333 A CN201510706333 A CN 201510706333A CN 105220121 B CN105220121 B CN 105220121B
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Abstract
The invention belongs to target preparing technical fields, and in particular to a kind of target material assembly and preparation method thereof.The target material assembly is made of backboard, target and backing plate, and preparation method is：The powder of direct cold spraying backboard material on the assembly of target and backing plate realizes that prepared by backboard and the welding of backboard and target is compound with synchronous；Finally, machining finished product target material assembly.The preparation method is simple for process, it is compound after target material assembly overall deformation it is small, without cracking, backboard density can reach 99.5% or more, backboard and 99% or more target welded rate, weld strength 50Mpa or more.
Description
Technical field
The invention belongs to target preparing technical fields, and in particular to a kind of target material assembly and preparation method thereof.
Background technology
In microelectronics plated film field, magnetic control spattering target is mostly the welding composite component of target and backboard.Backboard material is logical
Often there are Al alloys, Cu alloys, Ti alloys, austenitic stainless steel, Mo alloys etc..On the one hand, the use of backboard can reduce cost
The input of relatively high target material；On the other hand, backboard material usually has good heat conduction, electric conductivity, can pass through
Cooling water takes away rapidly the amount of heat that particle bombardment target surface in magnetron sputtering process generates.The welding method of target and backboard
There are soldering, diffusion welding (DW) etc..In, the Sn and its solder for being brazed generally use low melting point are welded, simple for process, but are welded
Intensity is relatively low (within 10MPa), and solder melt point is low, easily occurs target during use and cracks with backboard, falls situations such as target, reliably
Property is relatively poor.Diffusion welding (DW) has many advantages, such as that welded rate is high, weld strength is high, especially suitable for high-power, high efficiency sputtering plating
Film target, reliability are high.Diffusion welding (DW) is typically to fit closely molding solid-state target with backboard, in certain temperature and pressure
Lower holding a period of time, make the mutual scattering and permeating of atom between contact surface, to realize metallurgical binding, such as uses jacket by target
After material and backboard Vacuum Package, then to carry out hot isostatic pressing (HIP) diffusion compound.But common Ti alloys, W alloy, Cr are closed
Different melting points are larger between the targets such as gold, Mo alloys, target and Al alloys, Cu alloy backboard materials, exist and are not easy to spread, after welding
The big even problems of crack of flexural deformation.In addition, HIP diffusion technology for welding is very high to the requirement of jacket manufacturing technology, technique is multiple
Miscellaneous, there are the risks that jacket gas leakage leads to not soldering.
The operation principle of cold spraying is：Gas (air, nitrogen, helium etc.) is compressed to 0.5~5MPa by compressor,
The nozzle that high pressure gas is heated after (200~1000 DEG C) towards spray chamber in spray chamber washes away, and passes through the contraction of nozzle
Effect accelerates gas, on the way meets with the powder inputted by powder supply drum, forms the powder of supersonic speed (400~600m/s) together
Last particle flux is sprayed on matrix surface and is deposited into close coating securely.
The patent of invention for using cold spraying to carry out target material assembly manufacture is summarized as follows：US20131569, CN104040020
Using cold spraying target material, residual target feed supplement is renovated；WO2008/13768, US2008/062434, CN101801565 are used
Cold spraying prepares targets and the film coatings such as Ta, Nb, W-Cu, MoTi；WO2013/054521, CN103930591, using cold spray
It applies and prepares CuGa targets；CN102747329 uses cold spraying target material, to residual target feed supplement.It follows that existing patent is mostly
The fields such as solar energy manufacture with target, renovation method, and integrated circuit fields usually require that higher purity with target
(99.995%), consistency, cold spraying method is difficult to meet the direct preparation of such target, but can be prepared and be used with cold spraying method
In support target, the back board module of thermal conductivity.
The invention that target material assembly manufacture is carried out using cold spraying at present is mainly divided to two classes.The first kind is that target is sprayed on backboard
Material material, as WO2008/13768, US2008/062434, CN101801565 using cold spraying sprayed on backboard prepare Ta,
The targets such as Nb, W-Cu, MoTi and film coating；WO2013/054521, CN103930591 are sprayed using cold spraying on backboard
Prepare CuGa targets.Second class is renovated for residual target feed supplement：Residual target surface after sputtering consumption use can form the sputtering ditch of recess
Road, and remaining target clout can reach 40~80%, waste is very big.And cold spraying is used to carry out filler, feed supplement to sputtering raceway groove,
It is machined out renovation again, cost can be substantially reduced.As US20131569, CN104040020 are turned over using cold spraying method feed supplement
The targets such as new Mo, Ti, Nb, Ta, CN102747329 realize the feed supplement renovation of target using cold spraying method.
Above two class be target preparation or feed supplement renovation, be used for field of solar energy, to the purity of target, consistency,
The requirements such as gas content are general, and the integrated circuit fields target that the present invention is applicable in usually requires that higher purity
(99.995%), the requirement is not achieved in consistency and lower gas content, target performance prepared by cold spraying method.This hair
Bright that the back board module for being used to support target, thermal conductivity is prepared using cold spraying method, which is not involved in sputter coating,
To requirements such as its purity, consistency, gas contents far below target requirement.It yet there are no the report of related fields.
Invention content
The present invention provides a kind of preparation method of target material assembly, the target material assembly is made of backboard, target and backing plate,
Target and two pieces of backing plates form assembly, are as follows：
(1) corresponding backboard alloy powder is prepared according to backboard material；
(2) the backboard alloy powder of gained in step (1) is packed into the powder supply drum of cold spray apparatus, then target with
Cold spraying forms backboard on the assembly of backing plate；0.5~5MPa of operating air pressure at cold spraying nozzle, 200~1000 DEG C of temperature, the back of the body
3~20mm of plate layer thickness；
(3) gained in step (2) is machined out, prepares finished product target；
The backboard material is Al alloys or Cu alloys；
When preparing the assembly of target and backing plate, the target periphery processes Flange-shaped Parts, is overlapped on the backing plate of annular
On, realize close fit between the two；
Operating air pressure is 0.5~2MPa, 200~450 DEG C of temperature, backboard thickness at cold spraying nozzle in the step (2)
Spend 12~20mm；
Cold spraying described in step (2) carries out at room temperature.
The Al alloys are 6061Al or 5052Al, and the Cu alloys are CuCr, CuZn or CuNiSiCr.
When the backboard material is Al alloys, the backing plate material is 6061Al, 2~15mm of thickness；The backboard material
For Cu alloys when, the backing plate material be oxygen-free copper, 2~15mm of thickness.
The target material assembly being prepared according to the above method is without cracking, and backboard density is 99.5% or more, backboard and target
99% or more welded rate, weld strength 50Mpa or more.
The invention has the advantages that：
(1) target material assembly overall deformation is small, and weld strength is high：Due to being cold spraying at room temperature, the target base being sprayed-on
Generated on body surface face temperature (<200 DEG C) far below conventional HIP welding temperatures, thus because of material difference between target and backboard
Caused by deform it is very small.Further, since being supersonic speed powder particle flow, the backboard consistency of preparation is high, target and backboard
Weld strength is high, and up to 50Mpa or more meets the follow-up use of target.
(2) simple for process, it is suitble to large-scale industrial production：The present invention uses cold spraying method, by backboard material powder
It is sprayed on target matrix, the welding for synchronizing the preparation for realizing backsheet layer and backboard and target is compound, simple for process, is not present
Jacket gas leakage equivalent risk, and it is suitble to large-scale industrial production.And tradition HIP combination process, it needs to carry out HIP jackets processing system
Make, jacket exhaust, jacket sealing, HIP is compound, the multisteps process such as jacket is gone in leveling, processing, close to jacket processing and fabricating, jacket
Envelope requires technology very high.
Description of the drawings
Fig. 1 is the target and backing plate bridging arrangement schematic diagram before cold spraying of the present invention.
Fig. 2 is the target material assembly structural schematic diagram after cold spraying of the present invention.
Specific implementation mode
Below by the drawings and specific embodiments, the present invention will be further described, but is not meant to protect the present invention
Protect the limitation of range.
1 target material of embodiment is Ti, and backboard material is the target material assembly of 6061Al
(1) it stocks up：Prepare 6061Al alloy powders, powder size is 100 mesh.
(2) cold spraying backboard：
Backboard alloy powder is packed into the powder supply drum of cold spray apparatus, the then cold spray on the assembly of target and backing plate
Painting forms backboard.Backing plate material is 6061Al, thickness 10mm.Operating air pressure 0.5MPa at cold spraying nozzle, 500 DEG C of temperature, the back of the body
Plate layer thickness 15mm.
(3) it machines：Target material assembly after spraying is integrally machined, finished product target is prepared.
2 target material of embodiment is W, and backboard material is the target material assembly of CuZn
(1) it stocks up：Prepare CuZn alloy powders, powder size is 100 mesh.
(2) cold spraying backboard：
Alloy powder is packed into the powder supply drum of cold spray apparatus, then the cold spraying shape on the assembly of target and backing plate
At backboard.Backing plate material is OFC, thickness 5mm.Operating air pressure 3MPa at cold spraying nozzle, 600 DEG C of temperature, backboard layer thickness
12mm。
(3) it machines：Target material assembly after spraying is integrally machined, finished product target is prepared.
3 target material of embodiment is Cr, and backboard material is the target material assembly of CuCr
(1) it stocks up：Prepare CuCr alloy powder, powder size is 100 mesh.
(2) cold spraying backboard：
Alloy powder is packed into the powder supply drum of cold spray apparatus, then the cold spraying shape on the assembly of target and backing plate
At backboard.Backing plate material is OFC, thickness 2mm.Operating air pressure 5MPa at cold spraying nozzle, 800 DEG C of temperature, backboard layer thickness
5mm。
(3) it machines：Target material assembly after spraying is integrally machined, finished product target is prepared.
4 target material of embodiment is Mo, and backboard material is the target material assembly of 5052Al
(1) it stocks up：Prepare 5052Al alloy powders, powder size is 100 mesh.
(2) cold spraying backboard：
Alloy powder is packed into the powder supply drum of cold spray apparatus, then the cold spraying shape on the assembly of target and backing plate
At backboard.Backing plate material is 6061Al, thickness 15mm.Operating air pressure 2Mpa at cold spraying nozzle, 450 DEG C of temperature, backboard thickness
Spend 20mm.
(3) it machines：Target material assembly after spraying is integrally machined, finished product target is prepared.
5 target material of embodiment is WTi, and backboard material is the target material assembly of CuNiSiCr
(1) it stocks up：Prepare CuNiSiCr alloy powders, powder size is 100 mesh.
(2) cold spraying backboard：
Alloy powder is packed into the powder supply drum of cold spray apparatus, then the cold spraying shape on the assembly of target and backing plate
At backboard.Backing plate material is OFC, thickness 8mm.Operating air pressure 5MPa at cold spraying nozzle, 1000 DEG C of temperature, backboard layer thickness
3mm。
(3) it machines：Target material assembly after spraying is integrally machined, finished product target is prepared.
6 target material of embodiment is Ti, and backboard material is the target material assembly of OFC
(1) it stocks up：Prepare OFC alloy powders, powder size is 100 mesh.
(2) cold spraying backboard：
Alloy powder is packed into the powder supply drum of cold spray apparatus, then the cold spraying shape on the assembly of target and backing plate
At backboard.Backing plate material is OFC, thickness 5mm.Operating air pressure 3MPa at cold spraying nozzle, 700 DEG C of temperature, backboard layer thickness
10mm。
(3) it machines：Target material assembly after spraying is integrally machined, finished product target is prepared.
Table 1, Examples 1 to 6 target material assembly results of property
| Number | Target | Backboard | Density | Welded rate | Weld strength |
| Embodiment 1 | Ti | 6061Al | 99.8% | 99.9% | 120MPa |
| Embodiment 2 | W | CuZn | 99.9% | 99.5% | 60MPa |
| Embodiment 3 | Cr | CuCr | 99.6% | 99.7% | 65MPa |
| Embodiment 4 | Mo | 5052Al | 99.9% | 99.8% | 100MPa |
| Embodiment 5 | WTi | CuNiSiCr | 99.8% | 99.7% | 70MPa |
| Embodiment 6 | Ti | OFC | 99.8% | 99.9% | 110MPa |
Claims (4)
1. a kind of preparation method of target material assembly, the target material assembly are made of backboard, target and backing plate, target and two pieces of backing plates
Assembly is formed, steps are as follows：
(1) corresponding backboard alloy powder is prepared according to backboard material；
(2) the backboard alloy powder of gained in step (1) is packed into the powder supply drum of cold spray apparatus, then in target and backing plate
Assembly on cold spraying formed backboard；
(3) gained in step (2) is machined out, prepares finished product target；
It is characterized in that, the backboard material is Al alloys or Cu alloys；
When preparing the assembly of target and backing plate, the target periphery processes Flange-shaped Parts, is overlapped on the backing plate of annular, real
Now close fit between the two；
Operating air pressure is 0.5~2MPa, 200~450 DEG C of temperature, backboard layer thickness 12 at cold spraying nozzle in the step (2)
~20mm；
Cold spraying described in step (2) carries out at room temperature.
2. preparation method according to claim 1, which is characterized in that the Al alloys are 6061Al or 5052Al, described
Cu alloys are CuCr, CuZn or CuNiSiCr.
3. preparation method according to claim 1, which is characterized in that when the backboard material is Al alloys, the backing plate
Material is 6061Al, 2~15mm of thickness；The backboard material be Cu alloys when, the backing plate material be oxygen-free copper, thickness 2~
15mm。
4. the target material assembly that any one of the claim 1-3 preparation methods obtain, which is characterized in that the target material assembly is without opening
It splits, backboard density is 99.5% or more, backboard and 99% or more target welded rate, weld strength 50Mpa or more.
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| CN201510706333.0A CN105220121B (en) | 2015-10-27 | 2015-10-27 | A kind of target material assembly and preparation method thereof |
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| CN201510706333.0A CN105220121B (en) | 2015-10-27 | 2015-10-27 | A kind of target material assembly and preparation method thereof |
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| CN105220121A CN105220121A (en) | 2016-01-06 |
| CN105220121B true CN105220121B (en) | 2018-08-03 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108620812B (en) * | 2017-03-17 | 2019-10-22 | 宁波江丰电子材料股份有限公司 | The manufacturing method of target material assembly |
| CN111118460B (en) * | 2020-01-10 | 2022-06-03 | 广州市尤特新材料有限公司 | Rotary titanium target and preparation method thereof |
| CN112877653A (en) * | 2020-12-24 | 2021-06-01 | 有研稀土高技术有限公司 | Aluminum-scandium alloy diffusion welding target material and preparation method and application thereof |
| CN112894111B (en) * | 2021-01-18 | 2023-02-17 | 有研亿金新材料有限公司 | Diffusion welding method of high-scandium-content aluminum-scandium alloy target material and prepared welding assembly |
| CN114231918A (en) * | 2021-12-31 | 2022-03-25 | 东莞市精研粉体科技有限公司 | Preparation method of large-size planar metal target |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220864A (en) * | 1985-07-19 | 1987-01-29 | Showa Denko Kk | Target for sputtering |
| CN103343321A (en) * | 2012-03-12 | 2013-10-09 | 有研亿金新材料股份有限公司 | Method of manufacturing sputtering target |
| CN103422063A (en) * | 2012-05-25 | 2013-12-04 | 大同特殊钢株式会社 | Method for manufacturing target with flange |
| CN203683651U (en) * | 2014-01-02 | 2014-07-02 | 昆山全亚冠环保科技有限公司 | Target assembly |
-
2015
- 2015-10-27 CN CN201510706333.0A patent/CN105220121B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6220864A (en) * | 1985-07-19 | 1987-01-29 | Showa Denko Kk | Target for sputtering |
| CN103343321A (en) * | 2012-03-12 | 2013-10-09 | 有研亿金新材料股份有限公司 | Method of manufacturing sputtering target |
| CN103422063A (en) * | 2012-05-25 | 2013-12-04 | 大同特殊钢株式会社 | Method for manufacturing target with flange |
| CN203683651U (en) * | 2014-01-02 | 2014-07-02 | 昆山全亚冠环保科技有限公司 | Target assembly |
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