CN1051825A

CN1051825A - Solid-state, quantum mechanics electronics and hole wave devices

Info

Publication number: CN1051825A
Application number: CN89108621A
Authority: CN
Inventors: 托马斯·凯·盖洛德; 埃拉斯·尼·格里特斯; 凯文·弗·布莱那
Original assignee: Georgia Tech Research Corp
Current assignee: Georgia Tech Research Corp
Priority date: 1989-11-14
Filing date: 1989-11-14
Publication date: 1991-05-29

Abstract

Solid-state, the quantum mechanics, electronics or the hole wave devices that form by superlattice structure, can be on the energy that is higher than the superlattice potential barrier in superlattice structure, carrying out essentially no scattered electron or the hole provides energy selectivity.This device is by becoming the design transformation of optical thin film filter the design of semiconductor device to be designed to.For Election Wave Devices, this conversion comprises the light phase altered refractive index is directly proportional in a subduplicate solid-state phase index of electronic kinetic energy and electron effective mass product, and the light amplitude altered refractive index is directly proportional in electronic kinetic energy subduplicate another solid-state amplitude refractive index divided by electron effective mass.

Description

Solid-state, quantum mechanics electronics and hole wave devices

The present invention relates to solid-state, quantum mechanics electronics and hole wave devices and manufacture method thereof, be specifically related to: (a) solid-state quantum mechanics electron waves and hole wave devices such as low pass filter, high pass filter, arrowband and broadband notch filter, arrowband and broadband band-pass filter and impedance transformer; (b) such as tunable, voltage bias, can be as voltage bias semiconductor superlattice structure the electron waves interference filter/reflector of the heat emission utmost point of ballistic transistor; (c) semiconductor quantum well electronics and hole wave conduit.

Semiconductor growth techniques progress in recent years, especially the progress in molecular beam epitaxy (MBE) and the metal-organic compound vapor deposition (MOCVD) make in the art those of ordinary skill can situation in accurate control individual layer component under growth multilayer superlattice structure.For example, people produce such as G _aA _sAnd Ga _1-xAl _xA _sAnd so on arrowband and the broadband bandgap semiconductor material polylayer forest of growing successively and forming, and be widely used for constituting multi-quantum pit structure.In fact, some prior art document has related to the application of these superlattice structures in resonant tunneling effect, superlattice structure/multiple quantum well devices.Specifically, in this device, form superlattice structure by grow successively with extensional mode multilayer arrowband and broadband bandgap semiconductor material, the width of these materials and each material layer all passes through selection, and the feasible quantum state that produces owing to the space quantization effect of adjacent trap can intercouple.In addition, in these devices, these mutually the interaction of the quantum states of coupling cause having the little formation that can band of allowed energy that charge carrier can wear tunnel.

The resonant tunneling effect superlattice structure device great majority as described above that disclose in the prior art comprise single quantum well, two barrier structures-for example, can be referring to following author's article: T. English nanotesla, S. be spy, Y. Na Kate, S. Sa Sha, T. Fuji and S. Xi Yamizi not, be published in Japanese applicating physical magazine, 26, L 1332(1987); M.A. Reed, Lee J.W. and H-L Cai are published in the Applied Physics communication, and 49,158(1986); S.Y. the week and J.S. Harris, the Applied Physics communication, 52,1442(1988), and these devices are extremely significant one for example as the high-frequency microwave oscillator, can be referring to following author's article: T.C.L.G. Suo Na, W.D. Gourde(G) China, P.E. Tener Hua De, C.D. Parker and those grams of D.D., Applied Physics communication, 43,588(1983); T.C.L.G. Suo Na, E.R. Blang, W.D. Gourde(G) China and Lee H.Q., the Applied Physics communication, 50,333(1987).But, have recently the people in Ga As/Al Ga As material system with experimental results show that in the sandwich construction with three traps and four potential barriers resonant tunneling effect one for example, can be referring to C.J. Sa Mosi, K.F. Robert Brenner, the special Lapie of A. and H.M. Harris's article, the Applied Physics communication, 52,132(1988).In addition, these structures are at electroluminescent device, photodetector and potential application-for example arranged aspect the high energy injector of ballistic transistor fast, can be referring to following author's article: C.J. Sa Mosi and K.F. Robert Brenner, Applied Physics communication, 48,806(1986); K.F. Robert Brenner and C.J. Sa Mosi, applicating physical magazine, 61,5410(1987); C.J. Sa Mosi and K.F. Robert Brenner, IEEE quantum e-magazine, QE-23,320(1987).

In addition, following prior art list of references has disclosed superlattice structure and has exceeded the little band of barrier height and forbid be with to produce aspect the negative dynamic differential electricresistance effect or in the application aspect the low transmissivity obstruction contact constituting carrier energy: the article of T. Na Kajiahua, H. Yi Mamotuo, T. Sa Jiamotuo, T. Ku Xima, K. Austria spy and N.J. Ka Huayi, the electronics communication, 21 volumes, the 19th phase, 882(1985); T. Na Kajiahua, N.J. Ka Huayi and the K. article that is entitled as " design principle of CHIRP superlattice structure device " difficult to understand special, " superlattice and micro-structural " magazine the 1st volume that academic publishing Co., Ltd publishes, the 2nd phase, 1985,187 pages to 192 pages.

Except that above-mentioned, at present people are extremely interested in the device that presents high operation speed at structure in the art.Specifically, the principal element that influences semiconductor speed is the transit time of electronics from the input to the output.Can predict, if having the people to provide to pass semiconductor any scattering not take place, in other words, make " trajectory " or " collisionless " ELECTRON OF MOTION, so, the transit time can reach minimum, and it is maximum that the speed of device will reach.Recently, experimental result in Ga As provides the possibility of ballistic movement in semi-conducting material, this experimental result is entitled as at one piece by M. Hai Bomu in the article in " observed ballistic electron and hole in the semiconductor " and discloses, optics news, 1988,13 pages to 16 pages, this article does not constitute prior art.Therefore, can predict, zone length of passing through when electronics and electron mean free path (mfp) are when being in same order, and quite most electronics will pass through it with trajectory mode (collision-free motion mode).For example, though the electron mean free path mfp in silicon materials is in the order of magnitude of 100 dusts, the mfp of electronics is approximate in Ga As decuples this.

In order to test the validity of making this ballistic electron device, in prior art, disclosed a plurality of experiments, wherein, Ga As layer is clipped in the middle of the two-layer Al Ga As alloy.It is reported that Al Ga As is the material that is suitable for being used in wherein, because it has identical lattice constant with Ga As, thereby, can on Ga As, grow with extensional mode.In addition, further experiment report shows that the trajectory hole also takes place moves in Ga As, though because the unique texture of Ga As valence band compares with corresponding electron motion, the motion of trajectory hole is that less part takes place.

In view of this, in the art, need electronics and/or hole filtering device, as low pass, high pass, trap and band pass filter, they can be used to make the solid state device that needs the energy selective power, such as field () electroluminescence device, photodetector, ballistic transistor with as the filter/emitter structures of high energy electron injector in these devices, and the electronics or the hole waveguide device that are used for making the similar device of integrated optical device.

Each embodiment of the present invention has satisfied the demand of prior art, and they relate to three types embodiment: (1) no-bias device; (2) the bias voltage device is arranged; (3) waveguide.

The no-bias device

Embodiments of the invention satisfy demand noted before in the art, and the solid-state quantum mechanics electron waves and the hole wave devices that possess the energy selective power are provided.Specifically, embodiments of the invention comprise solid-state low pass filter, high pass filter, arrowband and broadband notch filter, arrowband and broadband band-pass filter, be similar to anti-optical reflection coating impedance transformer, be similar to the high reflectance device of plane mirror.

Embodiments of the invention comprise the multilayer superlattice structure of being made up of the material that can support significant ballistic electron conduction.When electronics injects this structure with the energy that is higher than corresponding potential barrier, the electron interference effect of all fours that this structure generation is taken place when propagating in dielectric film with electromagnetic wave.These embodiment creative method according to the present invention designs, adopt one first solid-state refractive index (index) as the phasor that is directly proportional with the long-pending square root of electronic kinetic energy and electron effective mass, and the amplitude amount that adopts conduct of one second solid-state refractive index (index) and electronic kinetic energy to be directly proportional divided by the square root after the electron effective mass.These indexes (rate) provide accurate similitude between quantum mechanics electron waves and the electromagnetism light wave, wherein, and the electronics wave vector:

k＝[2m ^＊（E-V）] ^1/2/

（1）

Similar to the light wave arrow, and electron waves amplitude refractive index:

n _e(amplitude) ∝ [(E-V)/m ^*] ^1/2(2)

Similar to optical index.These indexes are used in the expression formula of edge reflection rate and transmissivity in the known Electromagnetic Design of common those of skill in the art in those present technique fields, so that a kind of method with existing light interferencing filter design conversion cost invention semiconductor device design to be provided.For example, these conversions between light quantity and the solid-state amount can be used for well-known optical design is transformed into have that the Bart is fertile now, the design of the simulation solid-state wave filter spare of Qi Bishefu, elliptic function or other well-known filtering characteristic.Specifically, solid-state electronic wave device of the present invention embodiment comprises the solid-state analogue system made from Al Ga As and Ga As alloy of the special optical interference filter in Fabry-Perot Lip river.In addition, solid-state wave filter spare of the present invention can integral body be incorporated in the transistor arrangement, to improve its speed.

The validity of changing between electromagnetism light wave and the quantum mechanics electron waves depends on the existence of the conduction of electron-trajectory in the solid-state material, that is to say, electronics passes through solid-state material and not by the scattering of crystal defect institute.This ballistic electron has the energy that is higher than potential barrier in the solid-state material, and shows quantum-mechanical plane wave behavior (characteristic).In addition, because these plane waves keep its phase place in entire device, these coherent waves will reflect, reflect, interference and diffraction, and the behavior during by dielectric of its mode and electromagnetic wave is similar.

For embodiments of the invention, semiconductor doping is unessential, yet, preferably avoid mixing in the active region (zone of action) at device, to prevent the scattering in the material.This provides a further advantage for device of the present invention, does not make that device is easier to make because do not mix.

Though, we find, energy is higher than the electron waves of potential barrier and propagates and can describe with mathematical way by quantum mechanics electron waves in the semiconductor and the conversion between the electromagnetism light wave in the dielectric, but, for example just reprint of thin film optical filter design of semiconductor superlattice interference filter design.This be because, although the optical design that can realize is subjected to the constraint of the material refractive index that can obtain or use, the design of simulation semiconductor device, for example, the design of superlattice structure interference filter, to be subjected to the restriction of the following fact: (a) thickness limits of each level is the integral multiple of thickness in monolayer in the superlattice structure, and (b) requirement of the essentially no collision of charge carrier conduction has been limited available material component scope.Producing a kind of constraint in back is to use the material component with indirect band gap because collisionless conduction requirement has usually hindered.Yet, as in the art those of ordinary skill knew clearly, people can utilize the method (trial-and-error method) of repetition test to determine which design is practicable.But the preferred embodiment of the inventive method that will be described in detail provides the superlattice structure designed system method of determining suitably to satisfy physical constraints.

The bias voltage device is arranged

Embodiments of the invention have satisfied the demand in present technique field.The invention provides a kind of have bias voltage, semi-conductive, superlattice structure, tunable electron interference filter/emitter, for example can be used as the filter/emitter of the thermionic electron emitter of ballistic transistor.Specifically, one embodiment of the present of invention comprise a semiconductor superlattice Structure Filter/emitter that bias voltage is arranged, and the propagation of ballistic electron ripple provides the energy selective power for the electronic energy that is higher than the superlattice structure potential barrier is done basically for it.In addition, there is each level of the superlattice structure of bias voltage alternately to have high and low electronics refractive index, wherein the thickness of each layer is the integral multiple of electron wavelength 1/4th or 1/2nd values, and the quantum well barrier width is adjusted to transmit direction, so that the energy needed selective power to be provided.

Semiconductor superlattice structure wave-wave device/emitter that bias voltage arranged of the present invention is the method according to this invention design, the optical thin film interference filter design that is about to utilize existing optical interference filter design method to determine converts semiconductor device of the present invention to, with the front to the no-bias device discussed similar.Yet under the situation that the bias voltage device is arranged, owing to be added with bias voltage, the V in front equation (1) and (2) is the function of position in the semi-conducting material.

Waveguide

Embodiments of the invention provide semiconductor quantum well electronics or hole slab waveguide, have satisfied aforementioned need in the art.For example, this electron waves conduit should can be used in the high speed circuit, and can be used as the center part in guiding electron waves or the hole wave integrated circuit.Specifically, the electronic plane waveguide covers semiconductor layer by lining (base) end semiconductor layer, a thin film semiconductive layer and and forms, wherein each semiconductor layer provides the trajectory conduction haply of electronics, and the thickness of each semiconductor layer and component are determined according to the inventive method, to form a potential well.

Specifically, according to the present invention, there are the electronic waveguide pattern respectively in electronic energy in the trap and the electronic energy that is higher than one or all substrate layers and tectal potential barrier.In addition, because scattering, guided electromagnetic wave has only a low energy to end, and is opposite with this behavior of guided electromagnetic wave, and each electronic waveguide pattern also has a high energy to end, and at this, electron waves are refracted into substrate layer and/or cover layer.

Connection with figures is done to consider to following detailed description, can be obtained to complete understanding of the present invention, wherein:

Fig. 1 has shown superlattice structure electron interference filter constructed in accordance with diagramatic way;

Fig. 2 has shown the energy diagram and the material component of the superlattice structure electron interference filter of Fig. 1 with diagramatic way;

Fig. 3 has shown the index of refraction diagram of an optical thin film interference filter, this optical filter of superlattice structure electron interference filter optical analog among Fig. 1 with diagramatic way;

Fig. 4 has shown the transmissivity of superlattice structure electron interference filter among Fig. 1 with diagramatic way;

Fig. 5 has shown energy diagram and material component that bias voltage superlattice structure electron waves interference filter/reflector is arranged constructed in accordance with diagramatic way;

Fig. 6 illustrates the transmissivity of the superlattice structure electron interference filter of Fig. 5 with diagramatic way;

Fig. 7 forms with energy diagram and material that diagramatic way illustrates asymmetric quantum well slab waveguide constructed in accordance;

Fig. 8 is that it illustrates by Ga as the electronic guidance mode propagation constant curve chart of the function of whole electron energies _0.85Al _0.15As substrate layer, Ga As thin layer and Ga _0.70Al _0.30Evanescent mode (non-communication mode) district of the quantum well slab waveguide that the As cover layer is formed, guided mode district, substrate pattern district and an emission mode district, and for the pattern scattering curve of the basic mode Mo of various thin layer thickness; With

The wave function Uv curve chart of the various electron energy levels of the slab waveguide Mo pattern that Fig. 9 is made up of Ga Al As material system, Ga Al As material is to comprise that one has the Ga As thin layer of 10 single monolayer thick.

For the ease of understanding, part common in each accompanying drawing is represented with identical numbering.

Embodiments of the invention are described below, and embodiment relates to three types: (1) no-bias device; (2) the bias voltage device is arranged; (3) waveguide.

The no-bias device

Fig. 1 illustrates superlattice structure electron waves interference filter 100 constructed in accordance with diagramatic way.Filter 100 of the present invention provides the narrow bandpass transmission filter that is used for specific incident electron kinetic energy, and this electronic kinetic energy is greater than the barrier height of the material of each thin layer 101-109, input layer 131 and the output layer 132 of forming superlattice structure 120.To describe in detail below, the thickness of thin layer 101-109, composition and the barrier height of forming the material of thin layer 101-109 are the method according to this invention, utilize in semiconductor internediate quantum mechanics electron waves and the dielectric conversion between the optics electromagnetic wave to determine.Method of the present invention is advantageously utilized this conversion, makes people existing Film Optics designing technique and existing optical design can be applied to the design of corresponding solid-state quantum mechanics Election Wave Devices.

Fig. 2 illustrates the energy diagram and the material composition of the superlattice structure electron waves interference filter 100 of Fig. 1 with diagramatic way.As shown in Figure 2, input and

output layer

131 and 132 is respectively by Ga _0.55Al _0.45As constitutes.Superlattice structure 120 comprises quarter-wave Ga As layer 101, quarter-wave Ga _0.55Al _0.45As layer 102, quarter-wave Ga As layer 103, quarter-wave Ga _0.55Al _0.45The Ga As layer 105 of As layer 104, half-wavelength, quarter-wave Ga _0.55Al _0.45As layer 106, quarter-wave Ga As 107, quarter-wave Ga _0.55Al _0.45As layer 108 and quarter-wave Ga As layer 109.Quarter-wave and half-wavelength will define below.In addition, for the filter among Fig. 1 100, each thin layer 101,103,107 and 109 is made of 6 Ga As individual layers respectively, thereby, they all be that 16.9599 dusts are thick, and each thin layer 102,104,106 and 108 is all by 9 Ga _0.55Al _0.45The As individual layer constitutes, thereby all is that 25.4398 dusts are thick.In this embodiment, we give Ga As and Ga _0.55Al _0.45It is 2.82665 dusts that the As individual layer is all got thickness.Have, for the filter 100 of Fig. 1, the thickness of layer 105 doubles layer 101 thickness again.

Fig. 4 illustrates the transmissivity of superlattice structure electron waves interference filter 100 among Fig. 1 with graphic form.Kinetic energy by electronics is 0.139ev, and it determines that mode will be below with reference to injecting Ga _0.55Al _0.45The kinetic energy of the electronics of As layer 131 describes.Passband has the half maximum full bandwidth (FWHM) of 0.003ev, only is 2.2% of the kinetic energy by electronics.In addition, the very important point is that filter of the present invention provides when maximum and has been substantially equal to 100% transmissivity.

Now, we will illustrate method of the present invention, and it has utilized the conversion of the amount between the electromagnetism light wave in semi-conducting material internediate quantum mechanics electron waves and the dielectric.As following illustrated, this kind conversion is used for existing optical design method and existing optical design are converted to the method and the design of similar solid state device.The method according to this invention, this conversion comprises: (1) uses " electron waves phase place refractive index " n _eThe optical phase change effect that (phase place) comes conversion to produce because of path length difference, refractive index n _e(phase place) is [m with the long-pending square root of electron effective mass and electronic kinetic energy ^*(E-V)] ^1/2Be directly proportional and (2) usefulness " electron waves amplitude refractive index " n _e(amplitude) conversion optics amplitude effect such as transmissivity and reflectivity, refractive index n _eThe square root of (amplitude) and the ratio of electronic kinetic energy and electron effective mass, and promptly [(E-V)/m ^*] ^1/2Be directly proportional.

This kind conversion has utilized a discovery, and promptly the quantum mechanics electron waves in the semiconductor are similar fully to transmission, reflection, interference and diffraction characteristic that electromagnetism light wave in the dielectric shows.Thereby had with existing optical device designs mutually the equity electron waves and hole wave devices.This kind conversion is owing to recognizing that the following fact draws: (a) quantum wave function is similar to the borderline continuity of electric field tangential component between dielectric in the borderline continuity of potential energy, and is similar to the conservation perpendicular to the power circuit on border between dielectric perpendicular to the conservation of the electronics probability current on potential energy border with (b).Adopt the inventive method of the conversion of existing optical design method and existing optical design to be presented below again: in edge reflection rate and transmissivity expression formula, (1) uses electron waves vector K=[2m ^*(E-V)] ^1/2/

Replacement optics wave vector and (2) electron waves amplitude refractive index [(E-V)/m ^*] ^1/2Substitute light refractive index.

Importantly, above-mentioned conversion is applicable to the situation of the electron waves in the semi-conducting material, and this situation depends on the following fact again: (1) electronics has the energy of the potential barrier that is higher than semi-conducting material-present trajectory or collision-free motion referring to the electron energy level E-among Fig. 2 and (2) electronics in semi-conducting material.In addition, note the key factor of the conversion of following relevant the inventive method: (1) is even the electromagnetism light wave has polarization (polarization) phenomenon, and the conversion of amplitude effect is the single parameter that dimension is arranged, because in the transmissivity of electron waves and reflectivity expression formula, the dimensionless ratio of electron waves amplitude refractive index only occurs, so there is not inconsistent situation to occur; (2) phase effect and amplitude effect electron waves refractive index all present " normally " scattering, that is they reduce along with wavelength or energy increases and increases; (3) although semi-conducting material (a) at E-K, it is the band structure that has non-parabola shape in the energy-momentum function, (b) have, but these effects can be utilized an anisotropic effective mass m relevant with energy with the electron waves band structure that the concrete direction of propagation changes in material ^*Be incorporated into method of the present invention.Like this, even the wave-vector surface that allows under anisotropic situation no longer is sphere shape, as long as adopt the anisotropic effective mass relevant with energy in parsing, all methods for designing of the present invention in this proposition stand good.

According to above-mentioned discovery, determine, electron waves superlattice structure device of the present invention, for example interference filter has the characteristic identical with the Film Optics interference filter.Thereby some main performance of recalling these optical filters is useful, and meanwhile, we will look back the characteristic of superlattice structure electron waves interference filter of the present invention.

A kind of simple types of narrow bandpass optical interference filter is a Fabry-Perot rood filter.It is clipped between the reflector by the half-wavelength layer that often is called " interlayer " in optical literature and constitutes.In full dielectric Fabry-Perot rood filter, reflector is to be piled up with the low index quarter-wave layer that is designated as L by the high index quarter-wave layer that is designated as H to form.The FWHM of the passband of this type filter can reduce by increasing the borderline reflectivity of each layer.This can be by increasing high reflectance n _HWith antiradar reflectivity n _LRatio realize.In addition, for the layer of giving determined number, higher reflects in the present filter external boundary high reflectance H layer.Half-wavelength resonant layer at filter center can be high reflectance n _HMaterial or antiradar reflectivity n _LMaterial.The full dielectric Fabry-Perot rood interference filter that two kinds of fundamental types like this, are just arranged.In optical literature, their symbolicallies are [HL] ^NHH[LH] ^NAnd H[LH] ^NLL[HL] ^NH, wherein, H and L represent the quarter-wave layer of high reflectance and antiradar reflectivity material respectively, and N is illustrated in the number of repetition of material in the square brackets.

The method according to this invention, the common those of skill in the art in those present technique fields are known, be applicable to that also other key property of the full dielectric interference filter of the similar solid-state electronic wave filter of the present invention is: (CH ₁) maximum transmission rate of filter is 100%; (CH ₂) max transmissive appears at a wavelength place, (a) when measuring this wavelength in interlayer material, interlayer be that half of this wavelength is thick and (b) when this wavelength of measurement in reflector material, the reflector is the 1/4th thick of this wavelength, and this will be called below wavelength and pass through wavelength; (CH ₃) FWHM and resolution (definition) are subjected to the control of quarter-wave layer number on every side, that is when adding more quater-wave section, FWHM reduces, and resolution improves; (CH ₄) when transmissison characteristic drew curve as the function at the wavelength inverse of measuring in the material of filter, transmissison characteristic had been symmetrical by the wavelength both sides; (CH ₅) when the thickness of all layers changed pro rata, transmission (transmission) characteristic that is drawn as curve as the function of wavelength inverse produced a displacement simply; (CH ₆) if the thickness of all layers increases according to odd integer multiple, will a passband occur at the initial wavelength place that passes through, and FWHM will reduce; (CH ₇) when the incident angle that is incident on filter increases, become less by wavelength; (CH ₈) transmissison characteristic is more insensitive to the variation of the thickness of each layer and reflectivity; (CH ₉) normal scattering narrows down FWHM; (CH ₁₀) because all sideband will inevitably occur in the both sides of passband, filter is only effective in a limited range.

Be given in the known buzz word of those those skilled in the art when mentioning this filter below: (1) is from being called free spectral range FSR by passband peak value nearest under the wavelength to the scope by passband peak value nearest on the wavelength; (2) resolution equals FSR/FWHM; (3) resolution capability equals by wavelength/1/2nd FWHM.

Utilize above-mentioned conversion, we can determine the characteristic of multiple barrier semiconductor superlattice structural system.In the appendix I, the chain matrix method that employing is used always in electromagnetism, with the present invention the given electron waves vector of the conversion of phase mass is replaced light wave vector, the given electron waves amplitude refractive index of the conversion of refractive index in the expression formula is replaced edge reflection rate and transmissivity in the expression formula with the present invention.

Following example illustrates how to convert optical design to solid-state design.In this embodiment, one optical thin film design is published in book " thin film physics " the 5th volume that the A. Cyren shown, this book is by G. Haas and R.E. plug grace editor, new york academic publishing house published in 1969, above-mentioned optical thin film design occurs in a chapter of the 47th page of beginning, and it is converted into the electron waves Filter Design.This optical design is a kind of eleventh floor structure, demonstrates the FWHM band that equals to design by wavelength 2.2% and leads to.On the symbol of optical thin film design, this optical filter 1.0HL HH LHLHL HH L ' H1.0 acute pyogenic infection of finger tip; Wherein, the air in 1.0 indication input and output zones, H are represented the thick high index of a quarter-wave (in medium) measurement layer, and L represents low index (measuring) layer that a quarter-wave is thick in media.Like this, symbol HH represents the high index layer of half wavelength thickness.For optical design, n _H=4.0, n _L=1.35, n _L'=1.83.For the wavelength that passes through of 1.00 μ m, the actual (real) thickness of each layer of optical filter provides in the table I.

According to the conversion of the present invention that proposes previously, obtain corresponding electron waves superlattice Design of Filter in the following manner.At first, under calculate establishing an equation with input area in required electron waves by wavelength 1am _{E, 0}Electronics in the relevant input area is by kinetic energy (E-V ₀), m=0,

（E-V ₀）＝

²/2m ₀ ^＊lam _e，0 ²（1）

Wherein, m ^* ₀It is the electron effective mass in input area or m=0 zone.The second, go out scale factor D from following Equation for Calculating, with the amount of m layer [(E-Vm)/m * _m] ^1/2Convert the n of this layer to _{E, m}(amplitude).

D＝n ₀/[（E-V ₀）/m ＊ ₀] ^1/2（2）

Wherein, n ₀It is the refractive index in the input m=0 zone of optical design.The 3rd, go out each needed value of m layer (E-Vm) from following Equation for Calculating

（E-V _m）＝（n _m/D） ²m ＊ _m（3）

Wherein, n _mBe the refractive index in m zone in the optical design, m ^* _mIt is the electron effective mass in m zone.The 4th, utilize electron waves phase place index meter to calculate the thickness of quarter-wave layer, draw the actual (real) thickness of m layer.

d _m＝ /｛2 ^5/2[m ＊ _m（E-V _m）] ^1/2｝（4）

Like this, by these programs, the design of optical thin film interference filter design just being transformed into electron waves interference filter.Select the wavelength that passes through of 100 dusts to solid-state wave filter, listed corresponding kinetic energy (E-V) and one-tenth-value thickness 1/10 in the table II, for simplicity, in all layers of this example, all the sub-effective mass of power taking is the free electron quality.

If the thickness that calculates is too little, reality can not be selected such semiconductor superlattice structure, and perhaps degree of depositing is less than thickness in monolayer, and then the thickness of all layers can increase with a strange integral multiple.As the description that the front is done the optical interference filter, this can make the FWHM of solid-state wave filter reduce with identical multiple, the result, and solid-state wave filter can become the narrower filter of passband.For example, for the above-mentioned interference Design of Filter, solid layer thickness is increased 3 or 5 times can be reduced to 0.73% or 0.44% respectively from 2.2% of passband wavelength with FWHM.Yet, when selecting these bigger thickness, the resolution of filter, promptly bandwidth of Pai Chuing and the ratio that passes through wavelength have also reduced.In addition, it is also noted that as the optical thin film interference filter,, thereby increase the angle of leaving normal incidence as long as by the mechanical rotation filter, superlattice structure electron interference filter of the present invention can be adjusted to the lower wavelength that passes through continuously, thereby also just is adjusted to higher energy.

Said method once was used for neoteric filter 100 shown in the design drawing 1.Fig. 3 then is the design of the interference of light wave filter corresponding with solid-state wave filter 100 among Fig. 1, and as previously discussed, filter 100 comprises by Ga As layer and Ga _0.55Al _0.45The superlattice structure 100 that the As layer forms, this superlattice structure 100 is by input and output Ga _0.55Al _0.45As

layer

131 and 132 surrounds.Used effective mass in these filter 100 designs is got m according to existing document ^*(Ga As)=0.067m ₀, m ^*(Ga _0.55Al _0.45As)=0.10435m ₀, wherein, m ₀It is the free electron quality.Used conduction band edge energy is V(Ga As)=0.0000ev and V(Ga _0.55Al _0.45As)=and 0.3479ev, each Ga As individual layer and Ga _0.55Al _0.45The thickness of As all is 2.82665

As a result, concerning these materials, the Ga As(d of 6 individual layers ₁=16.9599 ) and the Ga of 9 individual layers _0.55Al _0.45As(d=25.4398 ) all approach very much 101.652A electron wavelength quarter-wave layer or at circumjacent Ga _0.55Al _0.45The 0.139456ev electronic kinetic energy that records among the As.

Above-mentioned neoteric structure can be made of the technology that those of ordinary skill in this field is known, for example, make of molecular beam epitaxy technique, and, according to the present invention, can become to assign to change the kinetic energy that passes through by reasonably select material, for example, by selecting in the above-mentioned example Ga to the ratio of Al.Like this, in order to obtain the specific kinetic energy that passes through, design process will be such: (1) is to F _1-xThe material system of GxH type is found out the X value, makes this material of whole individual layer equal the quarter-wave of passing through kinetic energy (E-V) measured in this material; (2) select the X value that those separate as far as possible, so that each borderline reflectivity reaches maximum (for example, in above-mentioned example, by selecting X=0 and 0.45 to realize); (3) primordial band pass filter originally, as in optics, one 1/2nd wavelength layer is clipped between the quarter-wave layer of types of material alternately and (controls FWHM and resolution with the quarter-wave number that centers on, promptly, when increasing more quarter-wave section, FWHM reduces, and resolution increases).Concerning those skilled in the art, should be very clear, except for example by this class shown in Figure 1 only the device by the superlattice structure that forms of layer of two kinds of different materials, this superlattice structure device of being invented also can be made up of the layer with multiple different materials component, and the design with layer of two or more different materials can be the needs for the solid state device of the simulated optical thin-film device of making particular type.

When designing according to solid state device of the present invention, can select suitable material component by trial-and-error method, with quarter-wave and 1/2nd wavelength layers of realizing that specific Design of Filter is required, but, we will narrate a most preferred embodiment of method of the present invention now, and it provides a kind of systems approach of selecting this component under a concrete situation.Supposing has a material system, and it forms one group of continuous F _1-xG _xH class alloy, the scope of available component is provided by the scope from 0 to Xmax of X for example.This situation occurs and be owing to conversion may occur at Xmax place, as at Ga from the DIRECT ENERGY band gap material to indirect energy bandgaps material _1-xAl _xWhat occur among the As is such.Although do not ban use of indirect bandgap material in theory, but they need change under the situation of momentum in the conversion between the conversion between direct and the indirect bandgap material or the two kinds of indirect bandgap material be out of use, this be because we related be the wave effect of collision-free motion in fact.

When the systems approach of selecting material component is discussed, suppose that the solid-state electronic wave filter comprises three kinds of materials: (1) around the material of superlattice structure, the i=0 zone has component X ₀, the material in the high reflective index district of the superlattice structure that (2) these two kinds of materials are formed, the i=1 zone has component X ₁, and, the material in the low reflection index district of the superlattice structure that (3) these two kinds of materials are formed, the i=2 zone has component X ₀, the thickness in monolayer in i=1 and the i=2 zone is respectively r ₁And r ₂, the electronic potential those skilled in the art know by following formula and provide in three zones:

Vi＝del E _c＝Axi i＝0、1、2 （5）

Here, del Ec is the energy changing of conduction band edge, and A is a constant.And same, those skilled in the art that know that the electron effective mass in the three class zones is:

m ^＊＝（B+Cxi）m ₀i＝0、1、2 （6）

Here, B and C are constants, m ₀It is the free electron quality.Electronic kinetic energy in the i district be (E-Vi)=

²/ 2m ^* _iLam ² _iTo represent that the kinetic energy that passes through that records is by total electron energy of filter in each zone by Ep:

Ep-Vi＝h ²/2m ^＊ _i（lam _p） ² _ii＝0、1、2 （7）

Here, (lam _p) _iBeing the wavelength that passes through that records in the i zone, is Ep-V at the total kinetic energy that passes through of filter that records in the material of superlattice structure ₀This is the kinetic energy that passes through of user's appointment, the just starting point of design process.Go out by wavelength with above-mentioned solution of equation, obtain:

（lam _p）i＝

/｛2m _o[-ACX ² _i+（CEp-AB）X _i+BEp]｝ ^1/2

i＝0、1、2 （8）

The thickness d of super lattice structure layers _iExpression, wherein, i=1,2.These thickness must be the integral multiples of thickness in monolayer ri, and these thickness must be the quarter-wave odd-multiple that records in these zones, and these restrictions can be expressed as following form:

di＝Piri＝（2qi-1）（lam _p） _i/4，i＝1、2 （9）

Here, pi is the integer to the individual layer in i zone, qi be

positive integer

1,2,3 ...Provide following 2 equation of n th order n by above-mentioned two equations about composition Xi:

ACX ² _i+（AB-CEp）X _i+（ ²/32m ₀）＊

[2q _i-1） ²/P 2 _ir ² _i]-BEp＝0 （10）

This equation can solve with 2 known equation of n th order n formula, in order to design the interference filter of a superlattice structure, separates for must find out Xi at least in 0 to Xmax scope two, and the minimum value of Xi will become X in this scope ₁, the composition of promptly high (reflection) index material, the pi value that produces Xi becomes p ₁, promptly be used for making the single index of the first kind material of quarter-wave layer.Similarly, the maximum of Xi will become X in this scope ₂, the composition of promptly low (reflection) index material produces X ₂The pi value become p ₂, promptly be used for making the individual layer number of the 2nd class material of quarter-wave layer.

In order to obtain separating of maximum magnitude, V ₀Be made as Vmax, then, appointment passed through kinetic energy (E-V ₀) decision Ep value.And, in order to make the total thickness minimum of filter, at the beginning qi is set at and equals 1, then, repeatedly to pi=1,2,3 ... separate this quadratic equation, all the positive real roots in finding out 0 to Xmax scope, if only find out a root or unrooted, that just changes parameter and restarts this process, the amount that can change is integer qi, change Ep around material composition Xo, and the crystalline growth direction that changes ri.

Separate by above method and to have decided X ₁, p ₁, X ₂And p ₂After, other parameter of filter can be calculated.Can be according to potential energy Vi, the effective mass m in above-mentioned Equation for Calculating first kind zone ^* _i, electron waves vector value Ki and electron waves amplitude reflection index n _e(amplitude) _i

As an example, Ga below considering _1-xAl _xThe As material system.This is a kind of very favourable material, because all the components all is complementary with the lattice of these alloys.For the growth along [100] direction, thickness in monolayer is r=r ₁=r ₂=2.282665

, X is less than or equal at 0.45 o'clock, and this material is direct gap semiconductor, the result, the composition range that this expression is available, in addition, to Ga _1-xAl _xAs, A=0.77314ev, B=0.067, C=0.083.

As an example, design a Ga _1-xAl _xAs superlattice interference filter, and have the kinetic energy that passes through of the 0.20ev that can be used for high speed ballistic transistor emitter, it is calculated as follows.Make X ₀=Xmax=0.45, Vo=0.347913 like this, because Ep-Vo=0.20ev, so Ep=0.547913ev.Make qi=1, to pi=1,2,3 ... calculating composition Xi, all the positive real roots in finding out 0 to 0.45 scope.To this example, two roots, i.e. X are arranged ₂=0.3984, with p ₂=6 correspondences, and X ₁=0.2063, corresponding with pi=7.The smaller value of Xi is used as X ₁, higher value is as X ₂Ga _0.79Al _0.21The thickness of As quarter-wave layer is d ₁=p ₁R=19.7866

, 7 individual layers.Ga _0.60Al _0.40The thickness of As quarter-wave layer is d ₂=p ₂R=16.9599

, 6 individual layers.It is m that electron effective mass in three zones calculates ^* ₀=0.10435m ₀, m ^* ₁=0.084126m ₀, and m ^* ₂=0.10007m ₀The kinetic energy that passes through in three zones is Ep-V ₀=0.2000ev, Ep-V ₁=0.3884ev, and Ep-V ₂=0.2399ev.Normalizing to around the electron waves amplitude refractive index in i=0 zone is n _e(amplitude) ₀=1.00000 ₀, n _e(amplitude) ₁=1.552027, and n _e(amplitude) ₂=1.118372, to 13 layers [HL] ³HH[LH] type Fa Buluo-Perot interference filter, these material behaviors that calculate form to have and are generally 0.20ev and FWHM is the filter of 15.4meV.

Repeat said process, design is the Ga of 0.14ev to 0.20ev by kinetic energy _1-xAl _xAs superlattice filter, this energy range are the scopes the most useful to ballistic transistor.The positive real root of 6 to 10 thickness in monolayer is shown in the table III, and these roots must at the low side 0.14ev of this energy range, have four roots in 0 to 0.45 scope, at the high-end 0.20ev of this energy range, two roots are arranged.

Sizable flexibility is arranged in the design of semiconductor superlattice interference filter, and for example, the quarter-wave of other odd-multiple also can be used qi=2,3,4 ..., can change to change V around material ₀, other lattice growth direction also can adopt, to change ri.

Though those skilled in the art can make other embodiments of the invention fully under the situation of not leaving spirit of the present invention, for example,, multiple hole wave devices and Election Wave Devices can be proposed according to spirit of the present invention.In addition, also having in spirit scope of the present invention can be manufactured on various electronics or the hole wave devices of doing electronics or hole wave propagation on the potential barrier, and these devices are analogue devices of electromagnetic wave device.In addition, according to method of the present invention, these devices can adopt the method for existing definite optical design and the conversion method of the invention described above to be made.Specifically, these devices are low pass filter, high pass filter, notch filter (arrowband and broadband), band pass filter (arrowband and broadband), impedance transformer (antireflection device), and, high reflecting surface (minute surface).In addition, filter can have the characteristic of knowing of Butterworth (the most smooth), Qi Bishefu, elliptic function or other type.Further, these devices of the present invention can be used to provide the electron source of single energy, are used for a whole class device such as electrochromic fluorescent devices, photodetector and ballistic transistor.Have, these devices of the present invention can be used for controlling, be shaped, filter the free space electron beam to realize the electron diffraction analysis of electron spectrograph, electric lithography and crystal again.

In addition, according to the present invention, can for example, inject the semiconductor layer that is clipped between the superlattice that design according to the method described above to them, to realize total reflection by following method guiding electronics or hole.

Aspect buzzword, those skilled in the art should be clear, and the described electron energy that is higher than potential barrier is corresponding to the energy that is higher than conduction band shown in Figure 2.The energy that is noted that described hole to one skilled in the art equally is corresponding to the energy that is lower than valence band.

The bias voltage device

Fig. 5 represents made in accordance with the present invention to be made up of energy diagram and material thereof bias voltage, electronics, superlattice, interference filter/reflector 100.Filter/reflector 100 of the present invention comprises M layer individual layer, promptly 200 ₁-200 _MLayer.200 ₁-200 _MIndividual layer is body semiconductor (semiconductor piece) material 110 ₁With 1100 ₂Layer centers on, predetermined bias voltage V _Bias/ q is added to 200 by a voltage source (not shown) ₁-200 _MBetween the layer, q is an electron charge.

As shown in Figure 5, electronics 250 is from 1100 ₁Layer injection filter/reflector 200 _M, in addition, have only those one should be in by near the narrow energy bands the ENERGY E p by ENERGY E p greater than 200 ₁-200 _MThe potential barrier one of layer, the electronics that promptly has kinetic energy (KE) in just can pass filter/reflector 100, is launched into 1100 ₂Go in the layer.In addition, these electronics are transmitted into 1100 with output kinetic energy (KE) out greater than input kinetic energy (KE) in ₂Go in the layer.

According to the present invention, because (KE) in of out＞(KE), filter/reflector of the present invention (emitter) 100 provides the function of emitter for the electronics with incident kinetic energy (KE) in.

People's easy to understand, electronics is by filter being applied bias voltage V from device of the present invention with the kinetic energy emission greater than its input kinetic energy _Bias/ q realizes.The characteristic of this filter is subjected to the potential energy V of bias voltage _BiasThe influence and by its decision.In other words, filter/reflector 100 provides a kind of transmission filter/reflector of narrow bandpass for the electronics with a certain incident kinetic energy, and the gross energy of these electronics is greater than constituting superlattice 200 ₁-200 _MThe barrier height of the material of layer.

As following will be described in detail, according to method of the present invention, 200 ₁-200 _MThe thickness of layer, formation 200 ₁-200 _MThe composition of the material of layer, and 200 ₁-200 _MThe barrier height of layer, the conversion that all is electromagnetism light wave in electron waves by adopting above-described semiconductor internediate quantum mechanics and the dielectric is determined, the present invention utilizes this conversion, Film Optics design with existing optical filter designing technique design is used to simulate solid-state quantum-mechanical electron waves filter/emitter device.

The basic structure of filter/reflector 100 of the present invention is superlattice electron waves interference filters of a kind of no-bias, is similar in the above narrated in the paragraph that is entitled as " no-bias device " the sort of.Specifically, determine suitable no-bias superlattice electron waves interference filter with the method that is similar to optical filter, this superlattice electron waves interference filter comprises the quarter-wave layer of the electronics of multilayer odd-multiple and even-multiple, for example, the Fa Buluo of above-mentioned narrow bandpass-Perot optical interference filter.

As further showing among Fig. 5, the thickness of j potential barrier or quantum well is by d _jExpression, the potential energy when zero-bias is by V _jExpression.In the present embodiment, (a) perisphere 1100 ₁With 1100 ₂Select to such an extent that have a same zero-bias potential energy V ₀, (b) 200 ₁-200 _MLayer is selected to such an extent that alternately have low-potential energy such as a V ₁With high potential energy such as V ₂These selections that more than exemplify are not limitations of the present invention, but in order to be easy to understand the working method of this embodiment of the present invention.As these regioselective results, and according to the conversion of above-mentioned equation (2), wherein, n _eBe proportional to the square root of (E-V), i.e. the kinetic energy of electronics, 200 ₁-200 _MAlternately have high reflective index and low reflection index.

According to embodiments of the invention shown in Figure 5, predetermined bias voltage V _BiasBe added on filter/reflector 100 200 ₁-200 _R1Layer forms a reflector R1, and the thickness of each layer of reflector R1 is at 1/4th, 200 of the electron wavelength of being with logical ENERGY E p place to record in this layer _R1+1The thickness of layer is half of the electron wavelength that records at the logical ENERGY E p place of band in this layer, 200 _R1+2-200 _MLayer forms a reflector R2, and wherein the thickness of each layer of reflector R2 is 1/4th of the electron wavelength that records at the logical ENERGY E p place of band in this layer, and the electron wavelength of one deck is provided by following formula according to equation (1):

Electron wavelength=2 π

/ [2m ^*(E-V)] ^1/2(B3)

Embodiments of the invention shown in Figure 5 are by comprising one group of continuous F _1-xG _xThe material system of H type alloy forms.In general, the available composition scope of such material system has certain restriction, as available composition scope by 0≤x≤x _MaxExpression is because at x _MaxThe place has the conversion from direct gap (forbidden band) to indirect gap (forbidden band), as Ga _1-xAl _xA _sThe situation that material system occurs at the x=0.45 place is such.

In addition, in the embodiment of the present invention shown in figure 5, around 1100 of filter/reflector 100 ₁With 1100 ₂Layer is formed by same material system, contains x=x ₀Alloy.Such as known for the skilled artisan, comprising F _1-xG _xElectronic potential in the material layer of H can be provided by following formula:

V _j＝del E _c＝Ax _j（B4）

Here, del E _cBe the energy changing of conduction band edge in the material, A is a constant, according to equation (B4), in making embodiments of the invention, the potential energy scope of given material system is provided by 0≤V≤Vmax.The usable range of this potential energy is represented by the potential energy of dotted

line

150 and 170 distributions in Fig. 5,0 electronic potential of the given material system of dotted line 150 expressions, the Vmax electronic potential of the given material system of dotted line 170 expressions.

Moreover, can the actual device of realizing for filter/reflector 100 is become, 200 ₁-200 _MThe thickness d of each layer _jMust be the thickness in monolayer r of this layer material system _jIntegral multiple p _j

Provide the method for embodiments of the invention to comprise: the first step, select a suitable no-bias superlattice electron waves interference filter earlier, for example the filter that in the paragraph of narration no-bias device, discloses.Specifically, what wherein disclose is one 9 layers of filter, i.e. M=9, and 9 layers of semi-conducting material by 72 individual layers are wherein formed.How narration now designs embodiments of the invention according to all the other steps of the inventive method, promptly determines concrete material component and each layer thickness.Particularly, the embodiment of the filter/reflector of the present invention 100 that is disclosed will be the electronics of 0.10ev through having input kinetic energy, i.e. KEin=0.10ev, and with its function emission with 0.20ev, i.e. KEout=0.20ev.In this case, because V _BiasEqual the poor of output and input kinetic energy, promptly output kinetic energy (KE) out equals V _Bias+ (KE) in, so, V _BiasTo equal 0.10ev.

In the employed symbol of optical thin film design, H refers to the quarter-wave thick layer of height (reflection) index (when measuring) in medium, the quarter-wave thick layer of L refers to low (reflection) index (when measuring in medium).Like this, symbol HH represents the half-wavelength thick layer of height (reflection) index.The embodiment of the filter/reflector of the present invention 100 that is disclosed comprises 9 layers: (1) ground floor is high (reflection) index, quarter-wave layer (H); The second layer is low (reflection) index, quarter-wave layer (L); (3) the 3rd layers is high (reflection) index, quarter-wave layer (H); (4) the 4th layers is low (reflection) index, quarter-wave layer (L); (5) layer 5 is high (reflection) index, 1/2nd wavelength layers (HH); (6) layer 6 is low (reflection) index, quarter-wave layer (L); (7) layer 7 is high (reflection) index, quarter-wave layer (H), and (8) the 8th layers is low (reflection) index, quarter-wave layer (L), and (9) the 9th layers is high (reflection) index, quarter-wave layer (H).

The following describes method for designing of the present invention.At first, thickness how to determine semiconductor layer is described, this thickness is the integral multiple of given electronics by 1/4th electron wavelengths under the ENERGY E p.For the thickness that makes the j layer in filter/reflector 100 to being 1/4th electron wavelengths by ENERGY E p, the input border of j layer, i.e. Z among Fig. 5 _J-1, with the output boundary of j layer, i.e. E among Fig. 5 _jBetween the electron waves phase difference must be the odd-multiple of pi/2, i.e. (2q _j-1) pi/2, this condition can be write as following form:

Potential energy V in the j layer _j(z) provide by following formula:

V _j（z）＝V _bias（1-z/L）+V _j（B6）

Here L is the total length of superlattice 100, q _jIt is positive integer.

The energy that passes through of filter/reflector 100 is provided by following formula:

E _p＝V _bias+V _o+（KE） _in（B7）

Here (KE) _InIt is input layer 1100 ₁Pass through kinetic energy.

The effective mass of j layer is provided by following formula:

m ^＊j＝（B+Cx _j）m ₀（B8）

B in the formula and C are constants, m ₀It is the free electron quality.

By V _j=Ax _j, obtain following " quarter-wave " condition:

｛2L[2m _o（B+Cx _j）] ^1/2/3 V _bias｝ ^＊

｛[V _o+（KE） _in-Ax _j+V _biasz _j/L] ^3/2-[V _o+（KE） _in-Ax _j+V _biasz _j-1/L] ^3/2｝

＝（2q _j-1）Π/2 （B9）

Solve an equation (B9) to determine the component x of j layer _j

Order: (1) i represents to constitute the individual layer number of the material of filter/reflector 100 of the present invention,

(2) i _jThe sequence number of representing rightmost side individual layer in filter/reflector 100 j layers of the present invention,

(3) i _MThe sum of representing individual layer in filter/reflector 100 of the present invention.By above-mentioned label:

The thickness of (1) j layer is by d _j=p _jr _jProvide, wherein p _j=i _j-i _J-1Be the individual layer number in the j layer, r _iBe material component x in the j layer _jThe thickness of an individual layer,

(2) gross thickness of filter/reflector 100 of the present invention is by L=∑ p _jr _jProvide, to r _jHave the material system of same value r in all each layers, it equals i _MR;

(3) distance along filter/reflector 100 of the present invention since end to a j layer is by Z _J-1Provide, as all r _jWhen all equating, Z _J-1=(i _J-1/ i _M) * L;

(4) distance that finishes along filter/reflector 100 of the present invention from end to a j layer is by Z _jProvide, as all r _jWhen all equating, Z=(ij/iM) * L.

Use these symbols, method of the present invention comprises the following steps:

(1), establishes i to ground floor ₀Equal 0, establish j=0;

(2) i _jValue add 1 value that just obtains next j, for example, i ₁=1.To quarter-wave layer, make q _jEqual 1,, replace pi/2 with π to 1/2nd wavelength layers, here, (2q _j-1) be the quarter-wave long number of j layer,

(3) use j, the previous i that determines _j-1 value and i _jCurrency, by solving x in the equation (B9) _jx _jBe the component of j layer, to high electron reflection index layer, select x approach most zero just real-valued, to the layer of low electron reflection index, select the x that obtains _jReal-valued, this value near but less than the value of the conversion from direct band gap (forbidden band) to indirect band gap (forbidden band), for example, to Ga Al As material system, this value is 0.45, if also have more layer to handle, then get back to step 2, otherwise enter step 4.

(4) if the individual layer sum that draws after in the end step is finished more than or count i less than the individual layer of initial supposition _M, then must revise initial supposition, get back to step 1 and attempt again.

Said process repeats, until with the x that approaches most zero _mThe i of initial supposition when the optimum thickness of the corresponding last one deck of value makes filter/reflector 100 of the present invention produce with design _mTill the consistent gross thickness.

We have used method of the present invention and have designed filter/reflector 100 of the present invention.As mentioned above, in this embodiment, layer 200 ₁To 200 ₉With surrounding layer 1100 ₁With 1100 ₂By Ga _1-xAl _xThe material of As material system is formed (component).This is a favourable material system, because all compositions are the lattices that mates with these alloys, and because, for the growth along [100] direction, the thickness of individual layer is identical, that is, and and r _j=r=2.82665

Again, the composition (component) in this material system, being less than or equal to 0.45 for X is direct gap semiconductor, the result, this has represented spendable composition (component) scope.Further, for Ga _1-xAl _xAs, A=0.77314ev, B=0.067 and C=0.083.Further again, in this embodiment, we will use by identical component (has X ₀=0.45 Ga _0.55Al _0.45As) surrounding layer 1100 of Zu Chenging ₁With 1100 ₂

For having input kinetic energy is that 0.10ev and output kinetic energy are the Ga of 0.20ev _1-xAl _xThe design of 9 layers of embodiment of the filter/reflector in the As system is listed among the table B-A, and this embodiment may be useful as an emitter in high speed ballistic transistor (high speed ballistic transistor).The effective mass of using in the design of this filter/reflector 100 is taken as m according to the document of prior art ^*(Ga As)=0.067m ₀And m ^*(Ga _0.55Al _0.45As)=0.10435m ₀, here, m ₀It is the quality of free electron.The energy on conduction band border is V(Ga As)=0.0000ev and V(Ga _0.55Al _0.45As)=0.3479ev.In this design, the gross thickness of the filter/reflector 100 of invention is 71 individual layers, and this thickness is corresponding to length L=20.0692nm.This illustrates such fact, that is, the length of such an embodiment of filter/reflector 100 of the present invention is enough weak points, to such an extent as to can make with the thin layer of ballistic semiconductor material.

As a kind of inspection to said method, we have calculated the electronic current transmission coefficient (transmittance) that the superlattice design of bias voltage is arranged among the table B-A.Because bias voltage provides the potential drop of a linearity, in arbitrary layer of filter/reflector 100, electron wave function can be expressed as Airy function Ai(

) and complementary Airy function Bi(

) linear combination, new here variable

_jIn the j layer, determine by following formula:

_j＝（2m ^＊jV _bias/

²L） ^1/3｛Z+（E-V _bias-V _j）L/V _bias｝（B10）

For the heap layer of the M layer that is shown in Fig. 5, electronic transmission coefficient Te multiply by square providing of electronics amplitude transmission coefficient by following coefficient:

[（E-V _o-V _bias）/M ^＊o] ^1/2/[（E-V _o）/M ^＊M+1] ^1/2（B11）

The Te of bias voltage superlattice design is shown in Fig. 6 among the table B-A.At design bias voltage V _Bias=0.10ev is in the curve 300, and the electronics of this device emission (KE) out=0.20ev is to output layer 1100 ₂Half maximum full bandwidth (FWHM) is 15.35% of 30.7m ev or a central energy.

Further, the output kinetic energy of filter/reflector 100 of the present invention is continuously adjustable, that is, the peak energy of curve enough is shifted and makes curve can keep a shape that filter function is provided.More particularly, the peak of output kinetic energy can be added on the bias energy V of filter/reflector 100 of the present invention by means of change _BiasAnd move.Because the HH resonant layer is in the central authorities of device, when measuring in the electronic light path-length, output kinetic energy peak mobile equals half of bias energy changing, that is, when bias energy change 50mev, the mobile of this output kinetic energy peak is 25mev.Like this, as shown in Figure 6, for V _BiasThe variation of ± 50mev, curve 301 and 302 shows: the peak of output kinetic energy moves ± 25mev.But notice that to different curves, transmission coefficient is different.This continuously adjustable characteristic except flexibility, also provides a kind of significant advantage for filter/reflector of the present invention, that is, the bias potential energy can change to regulate and produced already but depart from the embodiment of predetermined design output characteristic.

Some important characteristic at the all-dielectric optically interference filter of above-mentioned no-bias device portions discussion also is applicable to solid-state electronic wave filter/reflector of the present invention, that is, and and (CH ₂); (CH ₃); (CH ₄); (CH ₅); (CH ₆); (CH ₇); (CH ₈); (CH ₉) and (CH ₁₀).

Should be clear in the art those skilled in the art, superlattice device of the present invention can be made up of the layer with multiple different materials component.In addition, general technical staff also knows, can be by for example to the layer 200 of Fig. 5 ₁With 200 _MElectrode is set and between these electrodes, adds power supply and provide bias potential V to filter/reflector 100 of the present invention _Bias

It will be apparent to those skilled in the art, do not break away from design of the present invention and can also make other embodiment according to the present invention.For example, in design of the present invention, can also provide multiple hole to involve Election Wave Devices.In addition, in design of the present invention, can also make the filter/emitter device of multiple electron waves or hole wave.Further, this class device of the present invention can be applied to providing the semiconductor superlattice interference filter/reflector of narrowband, is used as thermionic electron emitter in resembling whole class devices such as electroluminescent device, photodetector and ballistic transistor.In addition, the device of these inventions can be used for control, is shaped and filters the free space electron beam to provide electronic spectrograph, the electron diffraction analysis of electronic printing (electron lithography) and crystal.

For not having biasing and bias device, be noted that importantly matching degree between design discussed here and the practical embodiments of the present invention depends on the quantity of the collision-free motion that material took place that is used for making.This means that if the migration of electronics in material is essentially no collision scattering, then the performance of device of the present invention is with more approaching desirable and designed characteristic.But, it is also important that to be noted that device of the present invention also will be by the characteristic operation of design if the migration of electronics is not essentially no collision scattering, certainly, performance will decrease, that is and, their performance reduces " appropriateness ".However, present molecular beam epitaxy (MBE) and Organometallic Chemistry evaporation (MOCVD) technology can make in the art that those of ordinary skill also can grow the super crystal structure of multilayer that has accurate individual layer component control and have the material that essentially no collision scattering electron transfer is provided.In addition, to embodiments of the invention, it is unessential that semiconductor mixes up, but, be preferably in to get rid of in the effective coverage of device and mix up in order to avoid the scattering in the material.This provides further facility to device of the present invention, does not make them be easy to make because mix up.

Though do not ban use of indirect bandgap material in principle, they can not be applied between direct band gap and indirect bandgap material or the transition (transfer) between two kinds of indirect bandgap material need to change the place of momentum.This is because the wave effect that we handle takes place in basic collision-free motion.

Notice that as their Film Optics homologue, the filter/reflector of super brilliant interference filter of the semiconductor of no bias conditions and bias conditions is insensitive to the variation of design team's score value comparatively speaking.Further: (1) is though semi-conducting material (a) can be at the E-K(energy-momentum) aspect have non-parabolic band structure and (b) can have the band structure that changes along with the specific direction of electron waves in material, promptly has anisotropic band structure, these phenomenons if, can depend on the anisotropic effective mass m of energy and they are incorporated in the method for designing of the present invention by using one.Like this, even the wave vector of permission surface no longer is spherical owing to anisotropic existence, aforesaid all methods for designing of the present invention stand good, and depend on that the anisotropic effective mass of energy is just passable as long as use in analysis.

At last, for not having the biasing and the two class devices of setovering, the people who has general technology in the art should be clear, the solid-state material that is fit to that is used for the embodiments of the invention manufacturing comprises for example binary, ternary and the quaternary component of III-group and II-VI family element, but is not limited to this class material.

Fig. 7 represents the energy diagram and the structure of asymmetric quantum well planar waveguide 2100 with graphic form.In the narration of this embodiment of the present invention, we will use following symbol:

(a) layer 2200 is called basalis S, and layer 2201 is called thin layer f and layer 2202 is called cover layer C;

(b) represent with Xw with the direction perpendicular to ducting layer 2200-2202 of arrow 2100 expressions;

(c) be that the electronic potential of bottom of the quantum well among the thin layer f is with V at layer 2201 _fExpression;

(d) layer 2200 is that basalis S and layer 2202 are that the electronic barrier height of cover layer C is respectively with V _sAnd V _cExpression.

(e) layer 2200-2202 is by F _1-xG _xThe material system of H type is formed, the result, and we are layer 2200-2202 basalis S, the component of thin layer f and cover layer C is expressed as X respectively _{S '}, X _{F '}And X _{C '}

(f) direction of propagation with the guided mode (guided mode) of arrow 2110 expression is expressed as Zw;

(g) ducting layer 2201 is that the thickness of thin layer f is represented with d;

(h) incidence angle that constitutes two plane wave components of electronic guidance ripple is represented with zigzag angle (Zig-Zag angle) θ;

(i) in layer 2200-2202 the amplitude of the electron waves vector in any by formula Ki=[2m ^* _i(E-Vi)] ^1/2/

Provide, in the formula, to the i.e. i.e. i.e. layer 2202 of layer 2201 and cover layer C of layer 2200, thin layer f of basalis S, i is respectively S, f, C, m in the formula ^* _iBe electron effective mass, V _iIt is electronic potential and E is total electron energy.

More particularly, in the narration below, layer 2200-2202 is by Ga _1-xAl _xThe material of As material system is formed, the result, and in the layer 2200-2202 of waveguide 2100, electronic potential is V _{S '}, V _{F '}And V _{C '}Provide by conduction band edge respectively:

V _i＝Ax _ii＝s，f，c （S3）

Further, in the layer 2200-2202 of waveguide 2100, electron effective mass is provided by following formula:

m ^＊＝（B+CX _i）m _Oi＝s，f，c （S4）

M in the formula ₀It is the free electron quality.

Before the method for the present invention of the specific embodiment that is described in detail design planar waveguide of the present invention, we will describe the working method of planar waveguide 2100 of the present invention qualitatively, and this can methods of this invention will be better understood.Again, be applicable to the notion of the critical angle among the present invention by understanding, people can understand the working method of planar waveguide 2100 of the present invention better.

Specifically, electron waves equivalence with Si Nieer (Snell) law, getting in touch planar waveguide 2100 of the present invention is extended, requirement be parallel to two layers the border the electron waves vector component the reflection with the refraction before and after be identical, that is, require along the transmission of the border between two layers identical with the phase place of incident electron ripple with the phase place of the electron waves of reflection.Thus, when incidence angle is above-mentioned zigzag angle when equaling critical angle, inner full-reflection begins to take place.Critical angle is provided by following formula:

For V _i＜E＜E _If

θ′ _if＝sin ^-1｛[m ^＊i（E-V _i）]/[m ^＊f（E-V _f）]｝ ^1/2（S5）

In the formula:

(a) for being the critical angle i=S on the border between basalis S and the thin layer f at layer 2200 and 2201;

(b) for 2202 being the critical angle i=C on the border between thin layer f and the cover layer c at layer 2201 and layer;

（c）E _if＝（m ^＊iV _i-m ^＊fV _f）/（m ^＊i-m ^＊f）

This being explained as follows physically, electron waves with one greater than θ ' _IfThe angle incide on the border, if the layer of the opposite side on border is an infinite thickness, then it will be by total reflection.Like this, when stable state, all for example incide the basalis of infinite thickness or the supratectal incident electron electric current of infinite thickness will be reflected back toward thin layer from thin layer.We point out with great interest, if the kinetic energy of electron waves is less than or equal to 0, that is, (E-V _i)≤0 then to any incidence angle, comprises that the normal incidence inner full-reflection can both take place.This point is different with electromagnetic situation, and the latter is when normal incidence, because the nonzero value of refractive index, inner full-reflection will never take place.

Fig. 8 represents to work as planar waveguide 2100 basalises 2200 by Ga with illustrated form _0.85Al _0.15As forms, and thin layer 2201 is made up of Ga As, and cover layer 2202 is by Ga _0.70Al _0.30When AS forms, the curve of electron-propagation constant and total electron energy.To an infinite medium, the electron-propagation constant is determined by following formula: b _i=[2m ^* _i(E-V _i)] ^1/2/

, in the formula, to the i.e. layer 2200 of basalis S, thin layer f i.e. layer 2201, and cover layer C i.e. layer 2202; Be respectively S, f, c.As shown in Figure 8: (a) curve 500 is to be the b of layer 2200 for basalis S _sCurve; (b) curve 501 is to be the b of layer 2201 for thin layer f _fCurve; (c) curve 502 is to be the b of layer 2202 for cover layer c _cCurve.Be shown in being explained as follows of information that the curve 500-502 of Fig. 8 provided.For a given total electron energy E, the propagation constant of guided mode can be not more than b _fThus, the zone 600 on curve 501 left sides is corresponding to the pattern of that die down or non-physics, and the guided mode that this electronic waveguide is allowed must be positioned at the right-hand of curve 501.But the guided mode of a permission must satisfy following condition: its zigzag angle must be greater than critical angle θ ' at the boundary of cover layer one thin layer _Cf, and must be greater than critical angle θ ' at the boundary of basalis one thin layer _Sf, that is, in Fig. 8, the scope of angle and gross energy must satisfy condition in a zigzag: θ＞max[θ ' _{Cf '}θ ' _Sf].Thus, the guided mode of permission must be arranged in the zone 601 on curve 500 left sides.

Below, we will discuss the phenomenon of ending of planar waveguide 2100 of the present invention qualitatively.An electronic guidance ripple can end by reducing electron energy, and we are called low energy to this energy when producing and end.Along with energy reduces, the zigzag angle of the plane wave component of electron waves reduces, and when zigzag angle θ=0, low energy is by taking place.The propagation constant b of V guided mode _vProvided by following formula, V is an integer since 0 here:

b _v＝[2m ^＊f（E-V）/ ²] ^1/2sinθ （S6）

As a result, work as b _v=0 o'clock, low energy was by taking place.At this moment, wave function thin layer f promptly layer 2201 be sinusoidal, basalis s promptly layer 2200 and cover layer c promptly layer 2202 are index decay.In this sense, low energy by to the hollow metal waveguide with limited conductive wall in the electromagnetism guided mode by similar, wherein, the plane wave component of electromagnetism guided wave is come back reflective to waveguide border normal incidence the time.

When the electron energy of guided mode increases, high energy also will take place end.It can be three types that high energy ends: (1) ends the substrate pattern in the zone 602 of Fig. 8, this is similar to ending in the asymmetric dielectric waveguide that basalis refractive index at electromagnetism is higher than tectal refractive index, (2) end radiation mode in 603 zones of Fig. 8, this is similar to ending in having the electromagnetism symmetry dielectric waveguide of equal basalis and tectal refractive index; (3) by replace mode, this is similar to having tectal refractive index and is higher than ending in the asymmetric dielectric waveguide of electromagnetism of basalis refractive index.Occur in the type that the high energy in the planar waveguide 2100 of the present invention ends and depend on propagation constant b ^' _s, b ^' _fAnd b _cIntersection point.Specifically, b _fAnd b _sThe crossing ENERGY E that occurs in _SfThe place, this energy is provided by following formula:

E _sf＝（m ^＊sV _s-m ^＊fV _f）/（m ^＊s-m ^＊f）（S7）

At this energy, for the i.e. i.e. layer 2200 of layer 2201 and basalis S of thin layer f, electron waves phase place refractive index equates, when arriving this energy, even electron waves along waveguide 2100 wall phase grazing incidences, planar waveguide 2100 of the present invention also no longer can guide electron waves.This ENERGY E _Sf' be equivalent to the critical angle θ ' of substrate-thin layer _Sf=90 °.

Similarly, b _fAnd b _cThe crossing ENERGY E that occurs in _CfThe place, this energy is provided by following formula:

E _cf＝（m ^＊cV _c-m ^＊fV _f）/（m ^＊c-m ^＊f）（S8）

At this energy, be that layer 2201 and cover layer c are layer 2202 for thin layer f, electron waves phase place refractive index equates.This ENERGY E _Cf' be equivalent to cover the critical angle θ ' of a thin layer _Cf=90 °.

Similarly, b _sAnd b _cIntersect in ENERGY E _CsThe place takes place, and this energy is provided by following formula:

E _cs＝（m ^＊cV _c-m ^＊sV _s）/（m ^＊c-m ^＊s）（S9）

At this energy, be that layer 2200 and cover layer C are layer 2202 for basalis S, electron waves phase place refractive index equates.

Usually, this high energy of the generation type of ending depends on material parameter.Specifically, in the embodiment described in Fig. 8, high energy will be by being the substrate mode cutoff, because b ^' _s(shown in curve 500) generally occurs in more low-yield, is usually less than b ^' _c(shown in curve 502).

In sum, for an electronic guidance pattern, when electron energy increased, angle θ also increased in a zigzag.Reach critical angle θ ' as zigzag angle θ again, _SfIn ' time, the electronic guidance ripple begins to be refracted into the i.e. layer 2200 of basalis, and exponential damping there not.Then, electron energy equals critical angle θ ' greater than zigzag angle θ _{Sf '}Energy the time, electron waves are propagated in basalis S and thin layer f simultaneously.This situation is called the substrate pattern.At last, when further increasing, electron energy make zigzag angle θ reach critical angle θ ' _{Sf '}The time, electron waves begin to be refracted into cover layer C i.e. layer 2202 and basalis S.At this moment, electron waves are promptly propagated among the layer 2200-2202 at all three layers, and this is called radiation mode.Note that to different material parameter groups when electron energy increased, possible electron waves were refracted and enter cover layer C, this is called replace mode.

Narrate method of the present invention below, this method is used for the specific embodiment of planar waveguide 2100 of the present invention is measured thickness and component.

As mentioned above, the amplitude and the electron waves phase place refractive index n of the electron waves vector of the electron waves in arbitrary layer in layer 2200-2202 _e(amplitude) provided by equation (1) and (2).Again, to two dimension (Xw, Zw) wave function of quantum well guiding electron waves has sine relation and can be expressed as follows in the Zw direction:

U _v（x _w，z _w）＝U _v（x _w）exp（jb _vz _w）（S10）

In the formula, b _vIt is the guided mode propagation constant.

Use equation (S10), Schrodinger's time individual waves equation (the Schroedinger time-independent wave equation) becomes:

d ²U _v（x _w）/dx 2 _w+（2m ^＊/h ²）[E _v-V（x _w）]-b 2 _v）U _v（x _w）＝0 （S11）

Like this, for a guided mode, basalis S promptly the wave function amplitude in the layer 2200 provide by following formula:

U _vs（x _w）＝A _sexp（g _sx _w）（S12）

At thin layer f is that the amplitude of wave function is provided by following formula in the layer 2201:

U _vf（x _w）＝A _f1exp（jk _fx _w）+A _f2exp（-jk _fx _w）（S13）

At cover layer C is that the amplitude of wave function is provided by following formula in the layer 2202:

U _vc（x _w）＝A _cexp（-g _c（x _w-d））（S14）

In the formula:

g 2 _c＝b 2 _v-[（2m ^＊c/ ²）（E _v-V _c）]

k 2 _f＝[（2m ^＊f/

²）（E _v-V _f）]-b 2 _v（S15）

g 2 _s＝b 2 _v-[（2m ^＊s/

²）（E _v-V _s）]

Promptly the scattering equation of guided mode can be by using U and (1/m in the layer 2201 at thin layer f ^*) (du/dx) when cross over covering a thin layer and substrate one thin layer border continuous boundary condition and being determined.

The scattering equation formula of guided mode is among the thin layer f:

k _fd-tan ^-1[（g _s/m ^＊s）/（k _f/m ^＊f）]

-tan ^-1[（g _c/m ^＊c）/（k _f/m ^＊f）]＝vΠ （S16）

In the formula, V is the pattern count of integer.Again, we will be expressed as Mv to the electron waves of guiding.

As discussed above, when electron energy reduces and guided wave propagation constant b _vGoing to zero makes when pattern is no longer propagated, and low energy takes place guided mode Mv ends.Fig. 8 represents this only when electron energy is lower than the low barrier energy of planar waveguide 2100, promptly during E＜Vs, could take place.

The electron energy of low energy when taking place is expressed as E _LCO, and the condition that low energy is ended can be passed through b _v=0 substitution scattering equation formula (S16) and determining.As a result, low energy cut-off condition can be by separating the E corresponding to the Mv pattern _LCOFollowing surmount function equation and determined:

[2m ^＊f（E _LCO-V _f）] ^1/2d/

-tan ^-1[m ^＊f（V _s-E _LCO）/m ^＊s（E _LCO-V _f）] ^1/2

-tan ^-1[m ^＊f（V _c-E _LCO）/m ^＊c（E _LCO-V _f）] ^1/2＝vΠ （S17）

Discuss as above-mentioned, when electron energy increase and for example at the guiding electron waves Mv high energy of substrate-when thin layer boundary inner full-reflection no longer takes place by taking place.Like this, when electron energy be increased to above high energy by the time, electron waves are refracted into substrate.That is, when electron energy be increased to above high energy by the time, the electron wave function amplitude is that exponential damping changes to propagation and promptly changes into sinusoidal from fading away in substrate.This low barrier energy that can only be higher than planar waveguide 2100 at electron energy could take place when being E＞Vs.As a result, pattern " leakage " enters substrate.

Electron energy when high energy ends is expressed as E _UCO, high energy cut-off condition can be passed through g _s=0 substitution scattering equation formula (S16) and being determined.As a result, by separating E corresponding to the Mv pattern _UCOFollowing surmount function equation and determine the high energy cut-off condition of substrate mode cutoff:

｛2[m ^＊sV _s-m ^＊fV _f-（m ^＊s-m ^＊f）E _UCO]｝ ^1/2d/

-tan ^-1（A/B） ^1/2＝vΠ （S18）

In the formula: A=[m ^*CV _c-m ^*SV _s-(m ^*C-m ^*S) E _UCO] m ^{* 2}f

B＝[m ^＊sV _s-m ^＊fV _f-（m ^＊s-m ^＊f）E _UCO]m ^＊2c

For given one group of layer component and potential energy, when the thick end d of waveguide increased, when promptly the thickness d of layer f or layer 2201 increased, guided mode Mv at first began to propagate with ENERGY E Vs.The highest probable value of the cut-off energy that this energy ends corresponding to low energy and the minimum probable value of the cut-off energy that high energy ends.Thickness d when E=Vs substitution scattering equation formula (S16) the pattern Mv of providing is at first begun to propagate:

d＝｛ /2m ^＊f（V _s-V _f）] ^1/2｝

^＊｛tan ^-1[m ^＊f（V _c-V _s）/m ^＊c（V _s-V _f）] ^1/2+vΠ｝（S19）

And the thickness range that only can produce the waveguide of each pattern of supporting to comprise V pattern is provided by following formula:

K ₁＊[K ₂+vΠ]＜d＜K ₁＊[K ₂+（v+1）Π] （S20）

In the formula: K ₁=

/ [2m ^*F(V _s-V _f)] ^1/2

K ₂＝tan ^-1[m ^＊f（V _c-V _s）/m ^＊c（V _s-V _f）] ^1/2

Like this, the thickness range of can applicable equations (S20) (V=0) determining layer 2201 only makes, and lowest mode is that Mo is directed to.Can easily understand from people here, the same with the asymmetric media plate waveguide of electromagnetism, arbitrary pattern will be propagated, and a minimum thickness all must be arranged.

In Fig. 8, curve 2300-2302 is the pattern scattering curve, promptly the propagation constant b of the minimum electronic guidance pattern Mo of a specific embodiment of planar waveguide 2100 of the present invention.Curve as the function of total electron energy.Specifically: (a) layer 2200 is that basalis S is by Ga _0.85Al _0.5As(X _s=0.15) forms; (b) layer 2201 is that thin layer f is by Ga As(X _f=0) forms; (c) layer 2202 is that cover layer c is by Ga _0.70Al _0.30As(Xc=0.30) form.We have used equation (S3) and the conduction band discontinuity have been taken as about 60% of band gap (forbidden band) variation with A=0.7731 and have determined layer 2200, Vs=0.115971ev; To layer 2201, V _f=0.0000ev; To layer 2202, Vc=0.231942ev.In addition, we have used equation (S4) with B=0.067 and C=0.083, determine layer 2202, m ^* _s=0.07945m ₀; To layer 2201, m ^* _f=0.067m ₀With to layer 2202, m ^* _c=0.0919m.In addition, to this embodiment, we get the growth of layer along [100] direction, the result, and to waveguide 2100, each individual layer of material has the thickness of 0.28267nm.

Use equation (S19), we find, when thin layer f has the thickness d of 6 individual layers, and fundamental mode M ₀Begin to propagate.In using equation (S19), we find that also when the thickness of 31 individual layers, next pattern M1 begins to propagate.As a result, to this embodiment, planar waveguide 2100 becomes single mode waveguide when thickness from 5 to 30 individual layers of Ga As layer 2201.

The curve 2300-2302 that is shown in Fig. 8 is the different-thickness d for thin layer f, b ₀As separating of scattering equation (S16) of the function of total electron energy.Specifically: (a) curve 2300 is corresponding to promptly 2201 layers of thin layer f, and the thickness of Ga As is that 10 individual layers are d=2.82665nm; (b) curve 2301 is d=5.6533nm corresponding to the thickness of 20 individual layer Ga As; (c) curve 2302 is d=8.47995nm corresponding to the thickness of 30 individual layer Ga As.

Understood easily by Fig. 8, as thin layer f, when promptly 2201 layer thicknesses increased, pattern scattering curve 2300-2302 moved to the upper left side.Again, when the thickness d of thin layer f increased, low energy was by descending, and promptly curve 2301 is lower than the energy of the intersection of curve 2300 with the energy of energy axes intersection, and high energy ends increase, and promptly the energy of curve 2301 and curve 500 intersections is higher than the energy of curve 2300 and curve 500 intersections.Notice that even when the thickness of 10 individual layers, it is E＞V that an energy is higher than two potential barriers _sAnd E＞V _cGuided mode M for example ₀Also can propagate.This can from curve 2300 and curve 500 joinings be positioned at Vc and this fact of Vs top is found out.

Different-thickness high energy cut-off energy E for curve 2300-2303 _UCO(substrate mode cutoff) and low energy cut-off energy E _LCO(end in b _v=0) poor △ E places table S-I.The high energy cut-off energy is drawn by equation (S18) and corresponding to Fig. 8 M ₀The joining of curve 2300-2302 and curve 500.The low energy cut-off energy is drawn by equation (S17) and corresponding to M ₀The intersection point of curve 2300-2302 and energy axes.

In the embodiment of (being Vc=Vs) planar waveguide 2100 of symmetry of the present invention, basalis and cover layer scattering curve b _sAnd b _cCoincide, here, basalis scattering curve b _s=[2m ^* _s(E-Vs)] ^1/2/

And cover layer scattering curve b _c=[2m ^* _c(E-V _c) ^1/2/

In this case, as electron energy minimizing and propagation constant b _v=0 o'clock, low energy was by taking place once more.This only is lower than electron energy and could takes place when barrier energy is E＜Vs=Vc.Work as b _v=0 o'clock, in a zigzag angle θ also equal 0 and the plane wave component of guided wave come back reflective, normal incidence is on the waveguide border.

To symmetrical waveguide, when energy increased, high energy became radiation mode by generation and guided mode.When high energy ended, inner full-reflection did not neither take place at cover layer one thin layer boundary on substrate one thin layer border yet.Electron waves are refracted into basalis S i.e. promptly 2202 layers of 2200 layers and cover layer C.When electron energy be increased to above high energy by the time, promptly 2200 layers and cover layer C are promptly in 2202 layers at basalis S, the electron wave function amplitude becomes propagation from disappearance.This only is higher than barrier energy for electron energy, promptly could take place during E＞Vs=Vc.Work as g _s=g _c=0 o'clock, mold leakage was gone into basalis S i.e. promptly 2202 layers of 2200 layers and cover layer C.This is similar to ending of in symmetrical media plate waveguide electromagnetism guided mode.When the zigzag angle equals the critical angle of the critical angle of basalis-thin layer and cover layer-thin layer simultaneously, such by taking place.

When electron energy E=Vs=Vc, electronic guidance ripple Mv occurs first.As a result, as thin layer f when promptly 2201 layers thickness d is increased to the value of following formula, electronic guidance ripple Mv at first begins to propagate:

d＝v

Π/[2m ^＊f（V _s-V _f）] ^1/2（S21）

Equally, i.e. (v=0) the pattern M of lowest order mode formula is only supported in generation ₀The thickness range of waveguide can obtain by following formula:

o＜d＜

Π/[2m ^＊f（V _s-V _f）] ^1/2（S22）

Can understand from equation (S22), the symmetrical electron planar waveguide is that similar in appearance to electromagnetism symmetry planar waveguide part there is not the requirement of minimum thickness in the propagation of lowest order mode formula, that is, any thickness can both be kept M ₀Pattern.But to very thin electronic plane waveguide, the afterbody of the exponential damping of wave function might stretch far basalis and the cover layer of entering.

Fig. 9 has represented a GaAs rete f that 10 thickness in monolayer are arranged with graphic form, that is rete 2201, for the wave function of the Mo mould of different electron energies; (a) curve 401 is corresponding to electron energy E ₁=E _LCO, end during b=0; (b) corresponding to electron energy V _s＜E ₂＜V _c; (c) corresponding to electron energy V _c＜E ₃＜E _UCO; (d) corresponding to electron energy E ₄=E _UCO; And (e) corresponding to electron energy E _s＞E _UCOCurve 401-404 shows the performance of guided mode in those electron energy scopes, and curve 405 expressions are for the wave function of the energy that is higher than cut-off energy, with the performance of expression substrate mould.

Obviously, the technical staff in the present technique field can recognize that the present invention also can have other embodiment, and they all still drop within the spirit scope of the present invention.For example, both can form the electronic plane waveguide according to the present invention and also can form the hole planar waveguide.

Aspect term, the those skilled in the art in present technique field should be clear, and the said here electron energy that is higher than potential barrier is corresponding to as shown in Figure 7 energy, and they are on conduction band.And the those skilled in the art in the present technique field also should be clear, and for the hole, similarly, they are corresponding to the energy under the valence band.

In addition, the those skilled in the art in the present technique field will be appreciated that electronics and/or hole are how to be injected in the rete of planar waveguide to go.

Again, the those skilled in the art in the present technique field should be clear, and embodiments of the invention can be made like this: rete is made up of the material of essentially no scattering, and basalis and/or cover layer do not comprise this material.Yet in such embodiments, basalis and/or cover layer mix enough few, thereby do not cause excessive loss in these layers, and this will be favourable.

Moreover the those skilled in the art in the present technique field should be clear, the desirable basically any value of the thickness of basalis and tectal thickness.Yet in fact, the thickness of these layers should be even as big as supporting the exponential tail of the guiding ripple in the rete.This thickness is generally much smaller than thicknesses of layers.In general, basalis and/or tectal thickness are the thickness of two, three layers of individual layer, and in fact, the thickness of basalis is inessential because basalis generally than on it the growth or deposit the layer much thick.Physically, these requirements can be understood as and proposed such requirement: the guiding ripple in the rete otherwise there is a border in " feeling " on for example tectal top.

At last, the those skilled in the art in the present technique field should be clear, and h is a Planck's constant,

Be Planck's constant divided by 2 π, the suitable solid-state material that can be used for making embodiments of the invention comprises the semi-conducting material such as III-group and II-VI family element two yuan, ternary and quaternary composition, but is not limited to these material compositions.

The table I

1.0HL HH LHLHL HH L ' H 1.0 types

The design parameter of narrow band light interference filter

Optical thin film filter

(wavelength that passes through=1.00 micron)

Refractive index thickness ( )

Input area 1.00

Zone 1(H) 4.00 625.000

Zone 2(L) 1.35 1851.852

Zone 3(L ') 1.83 1366.120

Output area 1.00

The table II

Corresponding to 1.0 HL HH LHLHL HH L ' H, 1.0 types

The design parameter of the arrowband electronic superlattices interference filter of light interferencing filter

The electronic superlattices filter

(the wavelength that passes through=100 )

Kinetic energy (ev) thickness ( )

Input area 0.015037

Zone 1(H) 0.240592 6.25000

Zone 2(L) 0.027405 18.51852

Zone 3(L ') 0.050357 13.66120

Output area 0.015037

The table III

For kinetic energy shown in the table and the individual layer number calculating component that can produce quarter-wave layer, promptly at Ga _1-xAl _xX numerical value among the As.In all cases, peripheral material all is Ga _0.55Al _0.45As, individual layer are crystalline state (100) planes, and only use the composition of X≤0.45.

The individual layer number

Transmission kinetic energy-

（ev） 6 7 8 9 10

0.140 0.0015 0.2902 0.3923 0.4513 0.4898

0.145 0.0278 0.2996 0.4004 0.4588 0.4970

0.150 0.0502 0.3088 0.4084 0.4663 0.5042

0.155 0.0702 0.3180 0.4164 0.4738 0.5115

0.160 0.0885 0.3272 0.4244 0.4813 0.5187

0.165 0.1057 0.3363 0.4324 0.4888 0.5259

0.170 0.1219 0.3453 0.4403 0.4963 0.5331

0.175 0.1373 0.3543 0.4482 0.5037 0.5403

0.180 0.1520 0.3632 0.4561 0.5112 0.5475

0.185 0.1662 0.3721 0.4640 0.5186 0.5547

0.190 0.1800 0.3809 0.4718 0.5260 0.5619

0.195 0.1933 0.3897 0.4797 0.5334 0.5690

0.200 0.2063 0.3984 0.4875 0.5408 0.5762

Table B-A

That form by [H L H L HH L H L H] 9 layers, by Ga _0.55Al _0.45That As surrounds and be designed to launch during for 0.100ev the design parameter of the electron interference filter/reflector of 0.200ev electronics when bias voltage.

The initial single end of number of plies layer type only bed thickness aluminium becomes the normalization of no-bias electricity

Number of plies i _J-1Number of plies i _jNumber of degrees p _jPart x _jSub-potential energy v _jEffective matter

Amount m ^*J/m ₀

1 H 0 7 7 0.2222 0.1718 0.0854

2 L 7 16 9 0.4151 0.3209 0.1015

3 H 16 23 7 0.2663 0.2059 0.0891

4 L 23 32 9 0.4493 0.3473 0.1043

5 HH 32 44 12 0.0639 0.0494 0.0723

6 L 44 52 8 0.4364 0.3374 0.1032

7 H 52 58 6 0.1442 0.1115 0.0790

8 L 58 65 7 0.3748 0.2898 0.0981

9 H 65 71 6 0.1951 0.1508 0.0832

Table S-I

At one with Ga _0.85Al _0.15As is that substrate, GaAs are rete, Ga _0.70Al _0.30As is in the tectal quantum well waveguide, for different thicknesses of layers, and the last cut-off energy of minimum wave guide mode Mo, following cut-off energy and energy range

Guide membrane thickness (Ga As)

d（nm） 2.8267 5.6533 8.4800

D(individual layer number) 10 20 30

Last cut-off energy, 0.4979 0.6536 0.6926

E（ev）

Following cut-off energy, 0.0973 0.0551 0.0341

E（ev）

Broadcast energy range 0.4006 0.5985 0.6585 partially

E（ev）

The appendix I

The following describes the method that a kind of design transformation with electromagnetism light wave device becomes the design of solid-state quantum mechanics Election Wave Devices.

According to the present invention, use the conversion between quantum mechanics electron waves and electromagnetism light wave of the invention described above, by directly being applied in the electromagnetism in order to design technology such as devices such as interference filters, particularly, can measure the characteristic of the solid-state superlattice of multiple barrier system by using the method for the known chain type matrix design of technical staff in the present technique field.

Said method is described as follows.Imagine a solid-state superlattice structure of being made up of the M layer, the one side is the boundary with the input medium that is called layer O, and opposite side is the boundary with the output medium that is called layer M+1.At the m-1 layer of superlattice, be incident on the m layer and and be called U with the electronics wave amplitude that forward is advanced _{I, m}At the m-1 layer, be called U from m layer reflection and with the electronics wave amplitude of negative line feed _{R, m}These compound wave amplitudes can be with on the border of inciding between m layer and the m+1 layer and the amplitude U of the correspondence that reflects from this border _{I, m+1}And U _{I, m+1}Be expressed as follows:

（AI-1）：

Wherein, t _{E, m}Be the amplitude transmittance of the interface between m-1 layer and the m layer, r _{E, m}Be the amplitude reflectance of same interface, k _{E, m}The size of electron waves vector in the m layer, d _mBe the thickness of m layer, ρ m is the angle of wave vector direction in the m layer.For a superlattice structure of forming by the M layer, at the total normalization transmitted electron wave-amplitude U of output layer M+1 _{T, m+1}With at the total normalization reflection electronic wave-amplitude U of input layer O _{R, o}The M+1 pattern chain that can carry out formula AI-1 by each layer to the M layer is taken advantage of and output layer is carried out a chain take advantage of and obtain.The result is:

（AI-2）：

Electron waves amplitude transmittance U _{T, m+1}With electronics wave amplitude reflectivity U _{R, o}, can directly draw from this formula.

Formula with form of formula AI-1 and AI-2 is widely used in Film Optics coating and Filter Design for many years.The kind of having discussed and had the device that a large amount of designs exist comprises low pass filter, high pass filter, notch filter (arrowband and broadband) impedance transformer (antireflection coating) and high reflecting surface (dielectric mirror).

Claims

1, a kind of electron waves semiconductor device that comprises a superlattice structure is characterized in that, above-mentioned superlattice structure supports electronics to do the conduction of collisionless scattering trajectory with the energy that is higher than the superlattice potential barrier fully.

2, by the described device of claim 1, it is characterized in that above-mentioned superlattice structure has the kinetic energy selective power, to select to have the electronics of the kinetic energy that is higher than the superlattice potential barrier.

3, by the described device of claim 1, it is characterized in that above-mentioned superlattice structure provides predetermined transmissivity and reflectivity for the electronics with the kinetic energy that is higher than the superlattice potential barrier.

4, by the described device of claim 3, it is characterized in that, have the thickness of each layer of superlattice structure material of predetermined transmissivity and reflectivity and composition and be and use the method for releasing from the light wave thin-film device class of forming by dielectric material to be determined that this light wave thin-film device provides predetermined transmissivity and reflectivity for electromagnetism light wave wherein.

5, by the described device of claim 3, it is characterized in that above-mentioned superlattice structure is made up of the multi-lager semiconductor material of predetermined arrangement, wherein the thickness of each layer is substantially equal to electron waves quarter-wave long number predetermined in this layer material.

6, by the described device of claim 5, it is characterized in that above-mentioned superlattice structure comprises a kind of so predetermined arrangement:

First kind of semi-conducting material of multilayer, wherein the thickness of first kind of semi-conducting material of each layer is substantially equal to electron waves quarter-wave long number predetermined in this layer material, and

Second kind of semi-conducting material of multilayer, wherein the thickness of second kind of semi-conducting material of each layer is substantially equal to electron waves quarter-wave long number predetermined in this layer material.

7, by the described device of claim 5, it is characterized in that above-mentioned semi-conducting material is binary, ternary or quaternary semiconductor composition.

By the described device of claim 5, it is characterized in that 8, the semi-conducting material that above-mentioned superlattice structure is had a predetermined conduction band height surrounds.

9, a kind of electron waves semiconductor device that is used to guide electronics, it comprises semi-conductor layer, it is characterized in that, above-mentioned semiconductor layer is surrounded by at least one superlattice structure, the trajectory that this superlattice structure can support electronics to do the collisionless scattering with the energy that is higher than its superlattice potential barrier fully conducts, and this superlattice structure total reflection electronics.

10, a kind of manufacturing comprises that abundant support electronics makes the method for electron waves semiconductor device of the superlattice structure of collisionless shot road conduction with the energy that is higher than the superlattice potential barrier, and this method comprises the steps: to form the extensional superlattice lattice structure of being made up of the semi-conducting material of predetermined number of layers; It is characterized in that, thickness of each layer and composition are so selected: the electromagnetism light wave designs of utilizing its parameter to determine according to optical design method becomes the optical device designs parameter transformation divided by the subduplicate second solid-state refractive index of electron effective mass the thickness and the composition of each layer of superlattice structure to by phase mass the light phase altered refractive index being directly proportional the light amplitude altered refractive index to be directly proportional with the subduplicate first solid-state refractive index of electron effective mass product and to the amplitude amount in electronic kinetic energy in electronic kinetic energy.

11, by the described method of claim 10, it is characterized in that at least one is to change with the quarter-wave odd integer multiple of electron waves in the thickness that obtains by conversion, be substantially equal to up to thickness till the integral multiple of thickness in monolayer of this layer material.

12, by the described method of claim 10, it is characterized in that at least a composition is changed, so that a kind of direct band gap material composition is provided.

13, by the described method of claim 10, it is characterized in that superlattice structure is by first kind of materials A _1-xB _xC and second kind of materials A _1-yB _yC forms, wherein:

Conduction band height in two kinds of materials roughly is directly proportional with X and Y, that is, be respectively V ₁=AX, V ₂=AY;

Effective electron mass in two kinds of materials and X and Y are roughly linear, that is are respectively m ^* ₁=(B+CX _i) m ₀And m ^* ₁=(B+CX _i) m ₀;

X and Y are determined by the root of following formula:

ACX ²+（AB-CE _p）X+（h ²/32m ₀）[2q ₁-1） ²/P ² ₁r ² ₁]-BE _p＝O

ACY ²+ (AB-CE _p) Y+(h ²/ 32m ₀) [(2q ₂-1) ²/ P ² ₂r ² ₂]-BE _p=O wherein Ep is the electron energy that incides on the superlattice, and h is a Planck's constant, m ₀Be the free electron quality, r ₁And r ₂Be the thickness in monolayer of material, d ₁And d ₂Be the thickness of superlattice layer, it must be the integral multiple of thickness in monolayer, and d ₁=P ₁r ₁, d ₂=P ₂r ₂Q wherein ₁And q ₂Respectively do for oneself since 1 integer.

14, a kind of hole wave semiconductor device that comprises a superlattice structure is characterized in that, above-mentioned superlattice structure supports the hole to do the conduction of collisionless scattering trajectory with the energy that is higher than the superlattice potential barrier fully.

15, by the described device of claim 1, it is characterized in that, this device also comprise one apply a predetermined inclined to one side potential energy in superlattice structure so that the filter that can select to have the predetermined kinetic energy electronics to be provided.

16, by the described device of claim 15, it is characterized in that above-mentioned superlattice structure is made up of the multi-lager semiconductor material of predetermined arrangement, wherein the thickness of each layer is substantially equal to the electron waves quarter-wave long number of being scheduled in this layer material under bias voltage.

17, by the described device of claim 16, it is characterized in that above-mentioned superlattice structure comprises first reflector, interlayer and second reflector, wherein:

First reflector comprises the layer of predetermined logarithm, and the thickness of each layer of centering is substantially equal to the electron waves quarter-wave long number of being scheduled in this layer material under bias voltage;

Interlayer is made of one deck, and its thickness is substantially equal to the electron waves half-wave long number of being scheduled in this layer material under bias voltage;

Second reflector comprises the layer of predetermined logarithm, and the thickness of each layer of centering is substantially equal to the electron waves quarter-wave long number of being scheduled in this layer material under bias voltage.

18, by the described device of claim 17, it is characterized in that,

Each has different electron waves amplitude refractive indexes to level two-layer in first reflector;

Each has different electron waves amplitude refractive indexes to level two-layer in second reflector.

19, by the described device of claim 18, it is characterized in that,

In first reflector each to level two-layer be arranged in from first end of device under the direction of second end of device, the higher level of refractive index is preceding, refractive index imitate low level after;

Each is arranged under the direction to second end from first end the two-layer of level in second reflector, and the lower level of refractive index is preceding, the higher level of refractive index after;

Interlayer is made of the higher layer of refractive index.

20, by the described device of claim 18, it is characterized in that,

In first reflector each to level two-layer be arranged in from first end of device under the direction of second end of device, the lower level of refractive index is preceding, the higher level of refractive index after;

Each is arranged under the direction to second end from first end the two-layer of level in second reflector, and the higher level of refractive index is preceding, the lower level of refractive index after;

Interlayer is made of the lower layer of refractive index; And

The higher arrangement layer of first refractive index is in front, first reflector, and second higher level of refractive index is arranged in back, second reflector.

21,, it is characterized in that superlattice structure comprises first kind of semi-conducting material and second kind of semi-conducting material, and the semi-conducting material that superlattice structure is had a predetermined conduction band height surrounds by the described device of claim 15.

22, by the described device of claim 21, it is characterized in that above-mentioned first kind and second kind of binary, ternary or quaternary semiconductor composition that semi-conducting material is III-group or II-VI family.

23,, it is characterized in that each of superlattice structure layer comprises that the level that the electronics refractive index just replaces, the thickness of each layer are substantially equal under bias voltage electron waves quarter-wave long number predetermined in this layer material by the described device of claim 15; And the quantum well barrier width of superlattice structure is predefined in the electronics transmit direction to form predetermined kinetic energy filter.

24, by the described device of claim 15, it is characterized in that, this device also comprise one apply a predetermined inclined to one side potential energy in superlattice structure so that the filter that can select to have the predetermined kinetic energy electronics to be provided.

25, a kind of manufacturing comprises that abundant assurance electronics makes method superlattice structure, biased electron waves semiconductor filter/reflector of collisionless scattering trajectory conduction with the energy that is higher than the superlattice potential barrier, and this method comprises the steps: to form the extensional superlattice structure of being made up of the semi-conducting material of predetermined number of layers; It is characterized in that, thickness of each layer and composition are determined according to iterative method, the electromagnetism light wave designs that this iterative method is determined according to optical design method with its parameter is done according to a preliminary estimate, and divided by the subduplicate second solid-state refractive index of electron effective mass the optical device designs parameter transformation is become the thickness and the composition of each layer of superlattice structure in electronic kinetic energy by phase mass is directly proportional the light phase altered refractive index light amplitude altered refractive index to be directly proportional with the subduplicate first solid-state refractive index of electron effective mass product and to the amplitude amount in electronic kinetic energy.

26, by the described method of claim 25, it is characterized in that, above-mentioned iterative method also comprises, in each step of iteration, determine the thickness of this one deck at least of superlattice structure by the wavelength of determining the one deck under bias voltage, and require the thickness of this layer under bias voltage to be substantially equal to the integral multiple of the thickness in monolayer of this layer material.

27, by the described method of claim 26, it is characterized in that above-mentioned iterative method further comprises the varied in thickness that makes the one deck at least in the quarter-wave odd integer multiple, be substantially equal to the integral multiple of the thickness in monolayer of this layer material until this thickness.

28,, it is characterized in that above-mentioned iterative method also comprises and changes the material composition of one deck at least, so that a kind of direct band gap material composition to be provided by the described method of claim 27.

29, by the described method of claim 28, it is characterized in that,

(a) each of superlattice structure is layer by A _1-xB _xThe material of C form is formed:

(b) the conduction band height of j layer roughly is proportional to X _j, that is V _j-AX _j;

(c) effective electron mass in the material and X _jRoughly linear, that is m ^* _j=(B+CX _j) m ₀; And

(d) thickness at the next level of bias voltage equals with kinetic energy (KE) _InThe such condition of the quarter-wave multiple of electronics that enters filter/reflector is provided by following formula:

｛2L[2m ₀（B+Cx _j）] ^1/2/3 V _bias｝ ^＊

｛[V ₀+（KE） _in-Ax _j+V _biasz _j/L] ^3/2-[V ₀+（KE） _in-Ax _j+V _biasz _j-1/L] ^3/2｝

＝（2q _j-1）Π/2

Wherein L is the thickness of superlattice structure, Z _J-1Be to survey to the spacing of the section start of j layer, Z from the section start of superlattice structure _jBe distance from the end of section start to the j layer of superlattice structure, V _BiasBe bias potential, qi is an integer,

Be Planck's constant divided by 2 π, mo is the free electron quality, V ₀It is the conduction band height of the material that enters the place of contiguous superlattice structure.

30, a kind of electron waves conduit, it comprises a base semiconductor layer, the thin film semiconductive layer of a contiguous base semiconductor layer, and the covering semiconductor layer of an adjacent films semiconductor layer, this device is characterised in that;

The covering semiconductor layer of base semiconductor layer, thin film semiconductive layer and a part of adjacent films semiconductor layer of part adjacent films semiconductor layer is supported electronics to make the collisionless bullet fully and is led conduction;

The thickness of predetermined thin film semiconductive layer and the composition of each semiconductor layer are to provide a potential well, make for electron energy in potential well and the electron energy that is higher than one of base semiconductor layer and covering semiconductor layer or both potential barriers, have the electron waves guided mode respectively.

31, by the described waveguide of claim 30, it is characterized in that the electronics barrier layer height of the covering semiconductor layer of this semiconductor device and base semiconductor layer is roughly the same.

32, by the described waveguide of claim 31, it is characterized in that the covering semiconductor layer of this semiconductor device and base semiconductor layer are to be made of same material.

By the described waveguide of claim 30, it is characterized in that 33, covering semiconductor layer, thin film semiconductive layer and base semiconductor layer is Ga by type _1-xAl _xThe composition of As is made.

34, by the described waveguide of claim 33, it is characterized in that thin film semiconductive layer is made of GaAs.

35, by the described waveguide of claim 30, it is characterized in that, determine the thickness d of thin film semiconductive layer, at least the V electron waves guided mode propagated, wherein V is an integer; D be substantially equal to or greater than;

d＝｛

/2m ^＊ _f（V _s-V _f）] ^1/2｝ ^＊

＊｛tan ^-1[m ^＊f（V _c-V _s）/m ^＊c（V _s-V _f）] ^1/2+vΠ｝

M wherein ^* _c, m ^* _fAnd m ^* _sBe respectively the electron effective mass that covers in semiconductor layer, thin film semiconductive layer and the base semiconductor layer, V _c, V _fAnd V _sBe respectively the electronic barrier height that covers semiconductor layer, thin film semiconductive layer and base semiconductor layer,

Be that Planck's constant is divided by 2 π.

36, by the described waveguide of claim 35, wherein waveguide only supports not to be higher than the mould of V mould, it is characterized in that,

K ₁＊[K ₂+vΠ]＜d＜K ₁＊[K ₂+（v+1）Π]

Wherein

K ₁＝

/[2m ^＊f（V _s-V _f）] ^1/2

K ₂＝tan ^-1[m ^＊f（V _c-V _s）/m ^＊c（V _s-V _f）] ^1/2

37, by the described waveguide of claim 31, it is characterized in that, determine the thickness of thin film semiconductive layer, at least the V electron waves guided mode propagated, wherein V is an integer; D be substantially equal to or greater than

D=V

π/[2m ^* _f(V _s-V _f)] ^1/2M wherein ^* _c, m ^* _fAnd m ^* _sIt is respectively the electron effective mass that covers in semiconductor layer, thin film semiconductive layer and the base semiconductor layer; V _c, V _fAnd V _sBe respectively and the electronic barrier height that covers semiconductor layer, thin film semiconductive layer and base semiconductor layer;

Be that Planck's constant is divided by 2 π.

38, by the described waveguide of claim 37, wherein waveguide is only supported apotype of the end, that is V=0, it is characterized in that

o＜d＜

Π/[2m ^＊f（V _s-V _f）] ^1/2

39, by the described device of claim 30, it is characterized in that semi-conducting material wherein is binary, ternary or the quaternary semiconductor composition of III-group or II-VI family element.

40, a kind of electron waves conduit, it comprises, a base semiconductor layer, the thin film semiconductive layer of a contiguous base semiconductor layer, and the covering semiconductor layer of an adjacent films semiconductor layer, this device be characterised in that,

Thin film semiconductive layer supports electronics to do the conduction of collisionless scattering trajectory fully;

The thickness of predetermined thin film semiconductive layer and the composition of each semiconductor layer to be to provide a potential well, make in potential well electron energy and be higher than base semiconductor layer and cover one of semiconductor layer or the electron energy of both potential barriers, have the electron waves guided mode respectively.

41, hole wave conduit, it comprises the thin film semiconductive layer of a base semiconductor layer, a contiguous base semiconductor layer, and the covering semiconductor layer of an adjacent films semiconductor layer, this device is characterised in that,

The base semiconductor layer of part adjacent films semiconductor layer, thin film semiconductive layer, and the covering semiconductor layer of a part of adjacent films semiconductor layer fully supports the hole to do the conduction of collisionless scattering trajectory;

The thickness of predetermined thin film semiconductive layer and the composition of each semiconductor layer are to provide a potential well, make for hole energy in potential well and the hole energy that is higher than one of base semiconductor layer and covering semiconductor layer or both potential barriers, have the hole wave guided mode respectively.