CN105177533B - A kind of method of utilization plasma situ cleaning MWCVD nacelles - Google Patents
A kind of method of utilization plasma situ cleaning MWCVD nacelles Download PDFInfo
- Publication number
- CN105177533B CN105177533B CN201510563596.0A CN201510563596A CN105177533B CN 105177533 B CN105177533 B CN 105177533B CN 201510563596 A CN201510563596 A CN 201510563596A CN 105177533 B CN105177533 B CN 105177533B
- Authority
- CN
- China
- Prior art keywords
- plasma
- nacelle
- mwcvd
- oxygen
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510563596.0A CN105177533B (en) | 2015-09-07 | 2015-09-07 | A kind of method of utilization plasma situ cleaning MWCVD nacelles |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510563596.0A CN105177533B (en) | 2015-09-07 | 2015-09-07 | A kind of method of utilization plasma situ cleaning MWCVD nacelles |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105177533A CN105177533A (en) | 2015-12-23 |
CN105177533B true CN105177533B (en) | 2017-11-03 |
Family
ID=54899942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510563596.0A Active CN105177533B (en) | 2015-09-07 | 2015-09-07 | A kind of method of utilization plasma situ cleaning MWCVD nacelles |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105177533B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109183146B (en) * | 2018-10-17 | 2020-08-07 | 哈尔滨工业大学 | Method for eliminating surface defects of single crystal diamond seed crystal by utilizing inductive coupling plasma technology |
CN113564562A (en) * | 2021-07-08 | 2021-10-29 | 哈工大机器人(中山)无人装备与人工智能研究院 | MPCVD cavity cleaning method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN102899635A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN104775154A (en) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | Method for controlling surface temperature in homoepitaxial growth of monocrystal diamond |
-
2015
- 2015-09-07 CN CN201510563596.0A patent/CN105177533B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN102899635A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN104775154A (en) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | Method for controlling surface temperature in homoepitaxial growth of monocrystal diamond |
Also Published As
Publication number | Publication date |
---|---|
CN105177533A (en) | 2015-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104988578B (en) | A kind of method that utilization plasma screen optimizes single-crystal diamond isoepitaxial growth | |
CN103489967B (en) | The preparation method of a kind of gallium oxide epitaxial film and gallium oxide epitaxial film | |
CN109545657A (en) | A kind of method of the gallium oxide film grown in improvement silicon carbide substrates | |
Li et al. | Atomic layer deposition Al2O3 thin films in magnetized radio frequency plasma source | |
CN101805891B (en) | Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films | |
CN105177533B (en) | A kind of method of utilization plasma situ cleaning MWCVD nacelles | |
CN108871890B (en) | Method for preparing TEM sample by using graphene as protective layer | |
CN103456603A (en) | Method for preparing gallium oxide film on gallium series heterogeneous semiconductor substrate and gallium oxide film | |
CN103924208A (en) | Method for preparing multilayer graphene thin film | |
CN103469147B (en) | A kind of titanium alloy action of low-voltage pulse vacuum nitriding method and device | |
CN105386002B (en) | A kind of low temperature preparation method of amorphous carbon film material | |
CN110257798A (en) | A kind of ICP-CVD prepares the deposition method of amorphous carbon film | |
Popovich et al. | Low-temperature deposition of tin (IV) oxide films for thin-film power sources | |
CN107557753B (en) | A kind of room temperature magnetism two dimension VSe2Film chemical vapor deposition growth method | |
CN205188486U (en) | Two dimension nanometer film preparation device | |
CN109183146B (en) | Method for eliminating surface defects of single crystal diamond seed crystal by utilizing inductive coupling plasma technology | |
KR20150004664A (en) | Pre-processes for diamond film coating and diamond film coating method using the same | |
CN105755449A (en) | Method for preparing nanocrystalline diamond film by adopting helicon wave plasma technology | |
CN113213774B (en) | Graphene glass and preparation method thereof | |
CN104561906A (en) | Gradient boron carbide film and preparation method thereof | |
Ali | Mechanisms of the growth of nanocrystalline Si: H films deposited by PECVD | |
Maoyang et al. | Preparation of Al-Al2O3 composite coating by dual-target magnetron sputtering and study on deuterium permeability | |
CN108220912A (en) | It is a kind of it is Ni-based on prepare the method for hydrophilic graphene film | |
CN113564562A (en) | MPCVD cavity cleaning method | |
CN103388130A (en) | Method for preparing InN films through low temperature deposition on ZnO buffer layers / diamond films / multilayer film-structured Si substrates by means of ECR-PEMOCVD |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220130 Address after: 100000 No. 5679, 5th floor, building 4, No. 7, Fengxian Middle Road, Haidian District, Beijing Patentee after: Carbon era (Beijing) Technology Co.,Ltd. Address before: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin Patentee before: HARBIN INSTITUTE OF TECHNOLOGY |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220316 Address after: 214070 room 401-1, 4th floor, 599-5 (Building 1), Jianzhu West Road, Binhu District, Wuxi City, Jiangsu Province Patentee after: Wuxi niuyuan material technology partnership (L.P.) Address before: 100000 No. 5679, 5th floor, building 4, No. 7, Fengxian Middle Road, Haidian District, Beijing Patentee before: Carbon era (Beijing) Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221021 Address after: No. 1-2, Deyang Road, Weihai Comprehensive Bonded Zone (South Zone), Wendeng District, Weihai City, Shandong Province 264400 Patentee after: Jiuhuan Carbon Structure (Weihai) New Materials Co.,Ltd. Address before: 214070 room 401-1, 4th floor, 599-5 (Building 1), Jianzhu West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: Wuxi niuyuan material technology partnership (L.P.) |