CN105177533B - A kind of method of utilization plasma situ cleaning MWCVD nacelles - Google Patents
A kind of method of utilization plasma situ cleaning MWCVD nacelles Download PDFInfo
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- CN105177533B CN105177533B CN201510563596.0A CN201510563596A CN105177533B CN 105177533 B CN105177533 B CN 105177533B CN 201510563596 A CN201510563596 A CN 201510563596A CN 105177533 B CN105177533 B CN 105177533B
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CN201510563596.0A CN105177533B (en) | 2015-09-07 | 2015-09-07 | A kind of method of utilization plasma situ cleaning MWCVD nacelles |
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CN201510563596.0A CN105177533B (en) | 2015-09-07 | 2015-09-07 | A kind of method of utilization plasma situ cleaning MWCVD nacelles |
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CN105177533A CN105177533A (en) | 2015-12-23 |
CN105177533B true CN105177533B (en) | 2017-11-03 |
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Families Citing this family (2)
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CN109183146B (en) * | 2018-10-17 | 2020-08-07 | 哈尔滨工业大学 | Method for eliminating surface defects of single crystal diamond seed crystal by utilizing inductive coupling plasma technology |
CN113564562A (en) * | 2021-07-08 | 2021-10-29 | 哈工大机器人(中山)无人装备与人工智能研究院 | MPCVD cavity cleaning method |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
CN102899635A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN104775154A (en) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | Method for controlling surface temperature in homoepitaxial growth of monocrystal diamond |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
CN102899635A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
CN104775154A (en) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | Method for controlling surface temperature in homoepitaxial growth of monocrystal diamond |
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Effective date of registration: 20220130 Address after: 100000 No. 5679, 5th floor, building 4, No. 7, Fengxian Middle Road, Haidian District, Beijing Patentee after: Carbon era (Beijing) Technology Co.,Ltd. Address before: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin Patentee before: HARBIN INSTITUTE OF TECHNOLOGY |
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Effective date of registration: 20220316 Address after: 214070 room 401-1, 4th floor, 599-5 (Building 1), Jianzhu West Road, Binhu District, Wuxi City, Jiangsu Province Patentee after: Wuxi niuyuan material technology partnership (L.P.) Address before: 100000 No. 5679, 5th floor, building 4, No. 7, Fengxian Middle Road, Haidian District, Beijing Patentee before: Carbon era (Beijing) Technology Co.,Ltd. |
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Effective date of registration: 20221021 Address after: No. 1-2, Deyang Road, Weihai Comprehensive Bonded Zone (South Zone), Wendeng District, Weihai City, Shandong Province 264400 Patentee after: Jiuhuan Carbon Structure (Weihai) New Materials Co.,Ltd. Address before: 214070 room 401-1, 4th floor, 599-5 (Building 1), Jianzhu West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: Wuxi niuyuan material technology partnership (L.P.) |