CN105177522B - Carbon-based nano particle film and preparation method with antireflective micro-nano structure - Google Patents
Carbon-based nano particle film and preparation method with antireflective micro-nano structure Download PDFInfo
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Abstract
The invention discloses a kind of carbon-based nano particle film of compound solid solution semiconductor coupling with antireflective micro-nano structure and preparation method thereof, this method includes selection and pre-treatment, the activation process of butterfly wing, and the nano particle that chemical deposition metal/semiconductor couples on butterfly wing, vacuum carburization butterfly wing and etc..The method that the present invention prepares the carbon-based nano particle film of the compound solid solution semiconductor coupling with antireflective micro-nano structure makes compound solid solution semiconductor nanoparticle film by using butterfly's wing, manufacturing process is simple, safe and stable, cost is low, energy consumption is low, prepared nanometer particle film realizes macroscopical large scale, and the antireflective microstructure with butterfly wing.This film has high-selenium corn reflection preventing ability in infrared spectrum wave band, and has excellent infrared photothermal conversion performance, and photoelectric effect, it is achieved thereby that infrared heat auxiliary infrared acquisition, can apply its infrared electro, infrared acquisition by it.
Description
Technical field
The present invention relates to metal, semiconductor nanoparticle film applications, and in particular to one kind has antireflective micro-nano structure
Compound solid solution semiconductor coupling carbon-based nano particle film and preparation method.
Background technology
Infrared sensing is an important technology, is widely used in the energy, environmental science, medical engineering and public safety
Deng field, such as energy measurement, environmental pollution monitoring, remote control, thermal imaging, night vision, hot photoelectricity, imaging of medical, optic communication, fire
Alert detection, monitoring, industrial stokehold, analysis detection etc..Most of infrared detections can be divided into three classes：Radiate heat type, thermoelectricity
Type and photoelectric type infrared detection.
Previously, it is refrigeration mode infrared sensor that can reach most of infrared sensing device of application request.But by
In the reason of cryogenic refrigerator so that refrigeration type infrared detector cost of manufacture is too high, while the service life of complete machine is limited, and
Volume is larger, heavier-weight, high energy consumption, so as to limit its extensive use.In order to reduce manufacture cost and Energy in use, science
Family non-refrigeration type infrared detector is prepared for using silicon materials, organic material.But infrared detector prepared by these materials
It is extremely low for the infrared acquisition performance of the infrared band beyond 800nm.In order to extend the spectral range of infrared detection, some nanometers
Material is applied to develop, prepares infrared sensing material, such as single-walled carbon nanotube, multi-walled carbon nanotube, carbon nanotube composite
Material, carbon nano-particle and graphite are dilute, its infrared acquisition sensitivity reaches 7%-52.9%.Meanwhile based on multicomponent composite Nano material
Material modulation, the light of optimization single component nano material, electric property mechanism, in past ten years, a large amount of metal nanos
Grain is (such as：Pt, Au, Ag nano particle) or semiconductor nanoparticle (such as CdSe, CdS, PdSn nano particle) by covalent or non-
Covalently come into being with the dilute compound infrared sensing material of carbon nanotubes or graphite, so as to effectively modulate, optimize carbon nanometer
The performance of pipe infrared sensor.However, for metal nanoparticle, although its plasma oscillation strengthens energy of electromagnetic field office
Amplification is collected in domain, but dispersed metal nano particle is compared with the absorption for being beneficial to promote visible ray；For CdSe, CdS, PdSn nanometers
Not only it is better than the ultraviolet absorption (250-500nm) to visible light wave region for grain, but also there is certain toxicity, therefore
Limit the exploitation of efficient, green infrared sensing material.Extensive use for green infrared sensing material, does not require nothing more than material
With excellent infrared absorption performance, it is also necessary to have nontoxicity.CuS、Cu2S nano semiconductor materials are not only cheap
Environmentally friendly material, also with broadband near-infrared absorption performance (800-1400nm), so as to be closed extensively by people
Note, and it is prepared for non-toxic infrared detecting materials.
However, current infrared sensing material micro-nano is simple in structure, and due to being limited by current preparation process, it is difficult to from
Assemble these nanometer of infrared sensing material and form macro-scale film or block infrared sensing with corresponding micro-nano functional structure
Material.
Bionical something lost state template, can effectively break through the limitation of traditional handicraft, and preparation has the fine functional structure of sub-micron
Nano-functional material because the evolution by hundreds of millions of years, nature has evolved a large amount of fine structures with corresponding function.
And the bionical infrared detecting materials largely with excellent infrared response characteristic are prepared for using bionical something lost state technology, are such as adulterated single
The infrared hot-probing material of blue flash butterfly wing of wall carbon nano tube, the infrared hot-probing material of blue flash butterfly wing of local deposition gold nano-material
And imitate pyrophilous beetle infrared detector etc..But these bionical something lost state infrared acquisition function elements belong to radiation heat type it is infrared
Detector, seldom has been reported that the bionical something lost state infrared detecting materials based on thermoelectricity or photoelectric type.
The content of the invention
It is an object of the present invention to provide a kind of compound solid solution semiconductor coupling with antireflective micro-nano structure
The preparation method of carbon-based nano particle film, to realize that preparing a kind of the carbon-based of macro-scale with antireflective micro-nano structure receives
Rice grain film, and the nano particle of the film is the nano particle with compound solid solution semiconductor coupling effect.
It is another object of the present invention to provide a kind of compound solid solution semiconductor coupling with antireflective micro-nano structure
Carbon-based nano particle film, it is a kind of film of macro-scale, can be used as infrared acquisition film, to realize compound solid solution half
The carbon-based nano particle film of conductor coupling has broadband absorbing properties, efficient photothermal conversion performance and well red
External photoeffect, and the purpose of heat auxiliary infrared acquisition performance.
To achieve the above object, technical solution proposed by the present invention is as follows：
A kind of preparation side of the carbon-based nano particle film of the compound solid solution semiconductor coupling with antireflective micro-nano structure
Method, comprises the following steps：
(1) selection one has the black light-absorbing butterfly wing of antireflective microstructure；
(2) the chemical deposition metal/semiconductor nano particle on the butterfly wing；
(3) the butterfly wing by chemical deposition after the metal/semiconductor nano particle carries out carbonization treatment, makes chitin base
Butterfly wing template switch is the carbon-based template of indefinite form, and the nano material for the metal/semiconductor coupling being deposited in template is changed into again
Solid solution semiconductor nano particle is closed, the butterfly wing after carbonization and compound solid solution semiconductor nanoparticle composition attached to it are compound
The carbon-based nano particle film of solid solution semiconductor coupling.
It is preferred that further included between the step (1) and step (2)：To butterfly wing carry out following steps pre-treatment and
Activation process：
A) the butterfly wing is placed in 15~30min of immersion in absolute ethyl alcohol；
B) clean；
C) the butterfly wing is impregnated in the HNO that volume fraction is 5%~15%31~3h in solution；
D) clean；
E) the butterfly wing is immersed in the solution of ethylenediamine and absolute ethyl alcohol, wherein the mass fraction of ethylenediamine for 10%~
40%, soak 3~10h；
F) clean.
It is preferred that the step (2) specifically includes：
A) the butterfly wing is impregnated in a beaker, metal ion solution is housed in the beaker；
The beaker is placed in drying box or in water bath with thermostatic control, is heated up and is protected by drying box or water bath with thermostatic control
Temperature.
It is preferred that the time that the butterfly wing is placed in metal ion solution is 0.1~24h, the metal reducing solution
Temperature is 25~50 DEG C.After the metal reducing solution is cooled to room temperature after the completion of dipping, take out the butterfly wing and clean.
B) the butterfly wing of the adsorbing metal ions is impregnated in a beaker, and metal reducing solution is housed in the beaker, system
The standby butterfly wing for obtaining being adsorbed with metal nanoparticle；
It is preferred that the time that the butterfly wing of the adsorbing metal ions is placed in metal reducing solution is 0.1-6h, the gold
The temperature for belonging to reducing solution is 25~50 DEG C.After the metal reducing solution is cooled to room temperature after the completion of dipping, described in taking-up
Butterfly wing simultaneously cleans.
C) the butterfly wing for being adsorbed with metal nanoparticle is impregnated in a hyperbaric environment, and wherein hyperbaric environment passes through high pressure
Chamber in-vivo medium ratio and heating and temperature control, the reaction solution equipped with synthesis semiconductor nanoparticle in the high-pressure chamber；
The reaction unit for providing above-mentioned hyperbaric environment for example can be autoclave.
It is preferred that the time for being impregnated in the reaction solution of synthesis semiconductor nanoparticle is 0.5-36h, high pressure chest is placed in
In body.The temperature of the high-pressure chamber is 50~90 DEG C.It is after the completion of dipping that the reaction of the synthesis semiconductor nanoparticle is molten
After liquid is cooled to room temperature, takes out the butterfly wing and clean.
It is preferred that after the completion of the step (2), to chemical deposition the nano particle butterfly wing of metal/semiconductor coupling into
Row drying process.
It is preferred that the butterfly wing is put into vacuum drying chamber, drying is vacuumized at room temperature.
It is preferred that the step (3) includes, the butterfly wing is placed in heatable device such as tube furnace, is vacuumized
Carbonization, carburizing temperature are 400~900 DEG C, and heating rate is 1~5 DEG C/min, 1~3h of soaking time.
It is preferred that the metal ion in the metal ion solution includes one in metal cation, complexation of metal ions
Kind is several.The metal reducing solution includes sodium citrate, lactic acid, dimethylamine borane, sodium succinate solution, and sodium borohydride is molten
One or more in liquid or solution of potassium borohydride.The reaction solution of synthesis semiconductor nanoparticle includes semiconductor cation,
Anion.
The metal is selected from the stronger noble metal of plasma resonance such as：Au、Ag、Cu；The semiconductor is selected from compound
Semiconductor, including the IIIth and the Vth compounds of group (GaAs, gallium phosphide etc.), the IIth and the VIth compounds of group (cadmium sulfide, vulcanization
Zinc etc.), oxide (manganese, chromium, iron, the oxide of copper), and consolidated by what III-V compounds of group and II-VI compounds of group formed
One or more in solution (gallium aluminum arsenide, gallium arsenic phosphide etc.).
A kind of the carbon-based of compound solid solution semiconductor coupling with antireflective micro-nano structure prepared using the above method is received
Rice grain film, the film have an antireflective microstructure, the particle diameter of the metal nanoparticle on the film for 15~
200nm。
It is preferred that the carbon-based nano particle film of the compound solid solution semiconductor coupling with antireflective micro-nano structure is
A kind of infrared Absorption, photo-thermal optoelectronic film, the film can be used as infrared Absorption and photo-thermal photoelectric converter integrated
Infrared light detecting film.
Any method commonly used in the trade can be selected in the method for above-mentioned cleaning, in a specific embodiment of the present invention,
Cleaned using deionized water.
The method of the present invention is by using the living organism i.e. butterfly wing with fine microstructure as template, butterfly wing template
Activate pre-treatment after, the butterfly wing of activation is placed in metal ion solution so that adsorption of metal ions on butterfly wing, after will absorption
The butterfly wing for having metal ion is impregnated in metal reducing solution, so as to prepare a kind of metal butterfly for depositing and having metal nanoparticle
Wing.The metal butterfly wing is placed in the reaction solution of synthesis semiconductor nanoparticle again, chemical deposition semiconductor nanoparticle, it
After carry out carbonization treatment.This method compares conventional nanometer particle film preparation method, and low with cost, energy consumption is low, prepares
Process is simple, safe and stable, time-consuming short, and the membrane structure of preparation is fine, grain graininess is uniform, easier realize it is more into
The advantages of dividing coupling.
A kind of the carbon-based of compound solid solution semiconductor coupling with antireflective micro-nano structure prepared by the method for the present invention is received
Rice grain film, is a kind of film for having coupled compound solid solution semiconductor nanoparticle and carbon-based butterfly wing template.The film combines
The broadband infrared light strong absorbent of compound solid solution semiconductor coupling nano particle can with the black of sub-micron micro-nano structure
Color butterfly wing to the high-absorbable of visible ray can advantage, and there is antireflective microstructure.The compound solid solution semiconductor coupling
Carbon-based nano particle film has broadband infrared light efficient absorption and excellent infrared photo-thermal, opto-electronic conversion performance, in addition
Its heat auxiliary photoelectric effect is notable, so that the compound solid solution semiconductor coupling with antireflective micro-nano structure prepared by the present invention
Carbon-based nano particle film there is excellent infrared light detecting performance as infrared acquisition film.
Compared with prior art, the compound solid solution semiconductor coupling with antireflective micro-nano structure that prepared by the method for the present invention
Carbon-based nano particle film had the beneficial effect that as infrared acquisition film：
First, the carbon-based nano particle of the compound solid solution semiconductor coupling with antireflective micro-nano structure prepared by the present invention
Film realizes macroscopical large scale, and the antireflective microstructure with butterfly wing (butterfly's wing), the film are red in broadband
Exterior domain has high-selenium corn reflection preventing ability, especially has stronger suction in red color optical band, near-infrared and middle infrared band
Receipts and reflection preventing ability, and also there is excellent photo-thermal, opto-electronic conversion performance；
Second, due to the carbon-based nano particle of the compound solid solution semiconductor coupling with antireflective micro-nano structure of the present invention
The excellent broadband infrared Absorption of film and efficient photothermal conversion performance, infrared acquisition film prepared therefrom have good
Infrared photo-thermal, photoelectric effect, its photo-thermal auxiliary photoelectric effect illustrates excellent heat auxiliary infrared light detecting performance；
3rd, utilize the carbon-based nano particle of the compound solid solution semiconductor coupling with antireflective micro-nano structure of the present invention
The good infrared Absorption performance of film can prepare high performance infrared light application material；Using its good light absorbs and
Photo-thermal, opto-electronic conversion performance can prepare high performance infrared light detecting material.
Brief description of the drawings
Fig. 1 (a) is the optical picture of skirt swallowtail butterfly fore wing；Fig. 1 (b) is the SEM figures of skirt swallowtail butterfly fore wing；Fig. 1 (c) is of the invention real
Apply 1 products therefrom Cu of example 1.96 S-Cu 2 The SEM figures of S@C_T_FW；
Fig. 2 (a)-(c) is respectively the following product of the gained of the embodiment of the present invention 1 and comparative example Cu 1.96 S/Cu 2 S@C_T_FW、
Cu 1.96 S-Cu 2 S@C_T_FW and Cu1.96The XRD data analysis figures of S@C_T_FW；
Fig. 3 (a), (b), the TEM image that (d) is 1 products therefrom of the embodiment of the present invention, the illustration of (d) are implemented for the present invention
The diffraction ring photo of 1 products therefrom of example；(c) it is the full resolution pricture of 1 products therefrom of the embodiment of the present invention；
Fig. 4 is 1 products therefrom of the embodiment of the present invention and the light absorbs figure for contrasting sample；
Fig. 5 (a) be different luminous powers 980nm Infrared irradiations under 1 products therefrom infrared sensing of the embodiment of the present invention it is thin
The photoelectric current of film changes over time curve map, sets 5V biass during the test, it in luminous power is respectively 0 He that Fig. 5 (b), which is,
0.166mW/mm2980nm Infrared irradiation under 1 products therefrom infrared sensing film of the embodiment of the present invention photoelectric current at any time
Between change curve, during the test set 5V bias；
It in luminous power is respectively 0 and 12.1mW/mm that Fig. 6, which is,2980nm Infrared irradiation under the institute of the embodiment of the present invention 1
Obtain the I-V curve of product infrared sensing film；
Fig. 7 is the infrared incident light work(of photoelectric current vs.980nm of the infrared sensing film of 1 products therefrom of the embodiment of the present invention
The data analysis figure of rate.
Embodiment
With reference to specific embodiment, the present invention is further explained.It should be understood that these embodiments are merely to illustrate this hair
It is bright, rather than limit protection scope of the present invention.Those skilled in the art, can be according to this area under the guidance of the present invention
General knowledge applies it to the other metal/semiconductors of preparation, the carbon-based nano particle film of compound solid solution semiconductor coupling, therefore
Following embodiments cannot limit the scope of the invention.
Embodiment 1
The carbon-based nano particle film of the compound solid solution semiconductor coupling of the present embodiment (is labeled as Cu1.96S-Cu2S@C_T_
FW preparation method), comprises the following steps：
(1) fore wing of skirt swallowtail butterfly is selected as the black light-absorbing butterfly wing with antireflective microstructure；
(2) following pre-treatment and activation process are carried out to the fore wing of selected skirt swallowtail butterfly：Butterfly wing is placed in first anhydrous
30min, deionized water cleaning are soaked in ethanol；Then butterfly wing is immersed in the HNO that volume fraction is 15vol%32h in solution,
Take out and clean；Butterfly wing is put into the ethylenediamine ethanol solution that mass fraction is 40% again and soaks 6h, is taken out afterwards, is used
Deionized water is cleaned for several times；Above-mentioned steps improve its surface adsorption property to remove depigmentation and impurity；
(3) Au nano particles are deposited：Above-mentioned butterfly wing after activation process is immersed into gold chloride presoma under 30 DEG C of constant temperature
4h in solution, afterwards taking-up are cleaned several times with deionized water；Then by butterfly wing 0.1M concentration NaBH4Solution is gone back at 30 DEG C
Former 30min, is cleaned with deionized water, obtain depositing the butterfly wing for having Au nano particles several times afterwards again；
(4) CuS nano particles are deposited：Au butterfly wings obtained by step 3) are impregnated in containing Cu2+And S2-80 DEG C of high pressures of solution
In kettle, 2h is kept the temperature, room temperature is cooled to room temperature afterwards, and after taking-up, deionized water is cleaned several times, and obtaining deposition there are Au-CuS nanometers
The butterfly wing Au-CuS_T_FW of grain；
(5) the butterfly wing Au-CuS_T_FW that the deposition prepared by the above there are Au-CuS nano particles is placed in vacuum tube furnace
In, by vacuumizing, furnace chamber is kept vacuum environment.Using the programming rate of 3 DEG C/min, 450 DEG C are heated to from room temperature, and
1h is kept the temperature at a temperature of 450 DEG C and carries out carbonization treatment.Then cooled to room temperature.Obtain final compound solid solution semiconductor coupling
The carbon-based nano particle film Cu of conjunction1.96S-Cu2S@C_T_FW。
The comparative example preparation method of the present embodiment is as follows:
(a) comparative example 1：Using the carbonisation identical with above-mentioned steps (5), to T_FW processing, carbon is prepared
The T_FW of change；
(b) comparative example 2：Above-mentioned steps (3) the Au depositing nano-materials processes of removal, are prepared using step (1), (2), (4)
CuS_T_FW is obtained, and is carbonized using the carbonization technique identical with above-mentioned steps (5), obtains carbon-based composite semiconductor " butterfly
Wing " functional material Cu 1.96 S/Cu2S@C_T_FW。
(c) comparative example 3：Increase the content of gold nano-material, after step (3) Au depositing nano-materials processes, make
Cleaned with deionized water, continued at a temperature of 30 DEG C in chemical plating Au nano-solutions (chemical plating Au nano-solution component contents
For：Gold chloride (1g), sodium chloride (0.6g), tartaric acid (0.4g), sodium hydroxide (5.14g), absolute ethyl alcohol (7ml), deionization
Water (100ml)) in, chemical deposition 12min.Deionized water is cleaned.Deposition CuS nano particles in step (4) are placed in again, prepare Au
(12min)-CuS_T_FW.And be carbonized using identical carbonization technique, it is carbonized, obtains to Au (12min)-CuS_T_FW
Obtain carbon-based solid solution semiconductor " butterfly wing " functional material Cu1.96S@C_T_FW。
The above method through this embodiment prepares the compound solid solution semiconductor coupling with antireflective microstructure of gained
The carbon-based nano particle film Cu of conjunction1.96S-Cu2Shown in pattern such as Fig. 1 (c) of S@C_T_FW, from Fig. 1 with pair of butterfly fin structure
Than as it can be seen that the nanometer particle film of the compound solid solution semiconductor coupling perfectly replicates the microcosmic knot of antireflective of skirt swallowtail butterfly fore wing
Structure；
Fig. 2 is following product manufactured in the present embodiment and comparative example：The carbon-based composite semiconductor of comparative example " butterfly wing "
(Cu1.96S/Cu2S@C_T_FW), the carbon-based compound solid solution semiconductor of product " butterfly wing " (Cu1.96S-Cu2S@C_T_FW) and comparative example
Carbon-based solid solution semiconductor " butterfly wing " (Cu1.96S@C_T_FW) XRD data analysis figures.
By analyzing XRD data, to butterfly wing tables of the CuS_T_FW after 450 DEG C of vacuum-sintering carbonization treatment
Face component thing phase change is studied (Fig. 2 (a)).By Fig. 2 (a) Suo Shi, CuS_T_FW into after crossing 450 DEG C of vacuum-sintering,
The XRD diagram picture of its resulting product shows as square phase Cu1.96S (JCPDS card no.29-0578) and hexagonal phase Cu2S
(JCPDS card no.26-1116).Because AQPS surfaces deposition CuS is hexagonal phase nano particle (JCPDS card
no.06-0464).Cu is decomposed into when be heated to 220 DEG C to CuS2S and elemental sulfur, as shown in formulas below：
In addition, the boiling point of sulphur is 444.6 DEG C.When up to 450 DEG C of sintering temperature, the sulphur that is decomposed thermally to form is with vacuumizing
Process is volatilized.So that hexagonal phase CuS nano materials are converted to hexagonal phase Cu2S nano materials.Again due to Cu2S is in air ambient
Lower thermodynamic instability, occurs oxidation and forms Cu under air1.96S.And with Cu2S-phase ratio, the Cu under air ambient1.96S's
Thermodynamic stability is more preferable.Therefore, CuS_T_FW is after carbonization, due to being aoxidized under air ambient, or in carbonisation by
Penetrate into and develop in a little oxygen of the limitation of vacuum, form carbon-based composite semiconductor " butterfly wing " (Cu1.96S/Cu2S@C_T_
FW)。
However, by Fig. 2 (b) Suo Shi, Au-CuS_T_FW after 450 DEG C of vacuum-sintering, its resulting product
XRD diagram picture also shows as square phase Cu1.96S (JCPDS card no.29-0578) and hexagonal phase Cu2S(JCPDS card
no.26-1116).In addition, and Cu1.96S/Cu2The XRD diffraction maximums of S@C_T_FW are compared, Cu1.96The diffraction maximum of S is stronger, and has more
Cu1.96(215) and (109) crystallographic plane diffraction peak of S.And Cu1.96(104) and (200) crystallographic plane diffraction peak of S is significantly to the right
Offset, as shown by the dash line in figure 2.This is because Emission in Cubic Au nano particles in high-temperature sintering process, are dissolved into square phase
Cu1.96In S nano particles, solid solution Cu is formed1.96S nano particles.Au atomic radiuses are less than Cu1.96The atomic radius of S, works as Au
When being dissolved into inside Cu1.96S nano materials, solid solution Cu is formed1.96S nano materials, make Cu1.96The lattice constant of S nano materials
Diminish, so as to cause XRD diffraction maximums to be deviated to high angle.And the catalytic oxidative of nanometer Au promotes Cu2S oxidations are converted to heat
The more stable Cu of mechanics1.96S.Again since XRD is only capable of analyzing solid solution parent phase component, solid solution enters Cu1.96In S-phase
Forming the Au phases of solid solution can not show from XRD data；Further, since the content of Au is relative to CuS's in Au-CuS_T_FW
Content is inherently relatively low, along with Au phases are dissolved into Cu after 450 DEG C of vacuum-sinterings1.96In S-phase, the Au contents made reduce, from
And make the too low presence for making XRD can not show Au phases of Au contents retained.Therefore, Au-CuS_T_FW is burnt by 450 DEG C of vacuum
The Cu obtained after knot1.96S-Cu2The XRD diffraction maximums of S@C_T_FW show as square phase Cu1.96S and hexagonal phase Cu2S。
Catalytic oxidative in order to further illustrate gold nano in high temperature cabonization sintering process promotes Cu2S oxidations are converted to
The more stable Cu of thermodynamics1.96S, and gold nano grain is dissolved into Cu1.96S forms solid solution, (1)-(4) step with more than
The Au-CuS_T_FW of preparation is compared, the present embodiment increase Au granule contents, prepares the comparative sample of Au (12min)-CuS_T_FW,
And it is carbonized by identical high temperature cabonization sintering process to Au (12min)-CuS_T_FW, obtains carbon-based solid solution and partly lead
" butterfly wing " (Cu1.96S@C_T_FW), shown in its XRD diffraction pattern such as Fig. 2 (c).By Fig. 2 (c) Suo Shi, Cu2The XRD diffraction maximums of S are basic
Disappear, Cu1.96The diffraction maximum of S becomes apparent.So as to illustrate that gold nano grain catalytic oxidative promotes Cu2S oxidations are converted to heat
The more stable Cu of mechanics1.96S.Wherein Cu1.96The Cu of S@C_T_FW1.96(104), (200), (215) and (109) crystal face of S spreads out
Peak is penetrated relative to Cu1.96S-Cu2The XRD diffraction maximums of S@C_T_FW further deviate to the right.So as to illustrate more Au nano particles
It is dissolved into Cu1.96S forms more Cu1.96S solid solution, further reduces Cu1.96S lattice constants, XRD diffraction maximums are to high angle
Offset.
Fig. 3 is carbon-based compound solid solution semiconductor nanoparticle film (Cu 1.96 S-Cu 2 S@C_T_FW) transmission electron microscope picture, thoroughly
Radio mirror is by the analysis of morphology observation and high-resolution, diffraction ring to Cu1.96S-Cu2The pattern and thing of S@C_T_FW mutually carries out
Analysis more directly perceived and deep.Shown in Fig. 3 (a), (b) and (d), Cu1.96S-Cu2S composite parts nano particle uniform folds
On the AQPS surfaces of T_FW, close-packed arrays are gathered into nano thin-film.By Fig. 3 (c) Suo Shi, can clearly be seen from HRTEM figures
Observe interplanar distance dCu2S (102)=0.24nm, dCu1.96The high-resolution lattice fringe of S (110)=0.28nm.By Cu1.96S-
Cu2Shown in the SAED figures (Fig. 3 (d) illustrations) of S@C_T_FW, Cu1.96S-Cu2S@C_T_FW transmission electron microscope diffraction rings correspond respectively to
Hexagonal phase Cu2(002) of S (JCPDS card no.26-1116), (110) crystal face and square phase Cu1.96S(JCPDS card
No.29-0578 (110)), (104), (115) crystal face.In conclusion prepared carbon-based compound solid solution semiconductor " butterfly wing "
For nanometer Cu1.96S and Cu2S composite functional materials.
Respectively write a Chinese character in simplified form in the literary neutralization figure of the present embodiment and be with the implication of label：
Au-CuS_T_FW is：Deposition with antireflective microstructure has the butterfly wing of Au-CuS nano particles；
CuS_T_FW is：Deposition with antireflective microstructure has the butterfly wing of CuS nano particles；
Cu1.96S/Cu2S@C_T_FW are：Carbon-based composite semiconductor nano-granular system with antireflective microstructure is (right
Ratio)；
Cu 1.96 S-Cu 2 S@C_T_FW are：The carbon-based nano of compound solid solution semiconductor coupling with antireflective microstructure
Particle film (embodiment)；
Cu1.96S@C_T_FW are：Nano-granular system (comparative example) is partly led in carbon-based solid solution with antireflective microstructure；
Au(12min)-CuS_T_FW：Compared to Au-CuS_T_FW, increase Au contents have antireflective microstructure
Au-CuS nano-granular systems；
T_FW is：Skirt swallowtail butterfly fore wing with antireflective microstructure；
C_T_FW is：Carbon-based skirt swallowtail butterfly fore wing with antireflective microstructure；
AQPS is：Antireflective quasi periodic micro-nano structure；
BlueTec eta plus_Cu are：The copper-based blue film of German Bruce.
Fig. 4 is the present embodiment product Cu1.96S-Cu2S@C_T_FW and other samples C_T_FW, T_FW and BlueTec
Eta plus_Cu are in the optical absorption map that wave-length coverage is 300-2500nm.In order to study Cu1.96S-Cu2The optics of S@C_T_FW
Performance, compared for Cu herein1.96S-Cu2S@C_T_FW, C_T_FW, T_FW and BlueTec eta plus_Cu are in wave-length coverage
The optical absorption map of 300-2500nm.As shown in figure 4, compared with other samples in figure, Cu1.96S-Cu2S@C_T_FW are in near-infrared
Optical band has most excellent absorbing properties.And there is a less optical absorption peak and one at 476nm and 608nm
The optical absorption peak (being shown in Fig. 4 illustrations) of broad peak waist, the smaller optical absorption peak wherein at 476nm come from Cu2The light of S nano materials
Absorb, the broad peak waist optical absorption peak at 608nm comes from Cu1.96The light absorbs of S nano materials.Simultaneously as Cu2S and Cu1.96S
The plasma concussion effect of the charge carrier of semiconductor nano material, promotes it to have good absorbability near infrared light wave band
Energy.In addition Cu2S and Cu1.96S semiconductor charge carriers plasma oscillation, exciton transition, and neighbour's Plasma Interaction and carbon
Base AQPS is coupled, and realizes that functional structure is integrated with functional material, so as to further strengthen broadband light absorbs, is particularly strengthened
Broadband infrared Absorption.With the BlueTec eta plus_Cu phases with the absorption of excellent solar energy, photothermal conversion performance
Than, in the optical wavelength range of 300-2500nm, Cu1.96S-Cu2The average light of S@C_T_FW is drawn and improves 78.5%.
Fig. 5 (a) is Cu under the 980nm Infrared irradiations of different luminous powers1.96S-Cu2S@C_T_FW infrared sensing films
Photoelectric current changes over time curve map, sets 5V biass during the test；(b) it in luminous power is respectively 0 and 0.166mW/ to be
mm2980nm Infrared irradiation under Cu1.96S-Cu2The photoelectric current of S@C_T_FW infrared sensing films changes over time curve
Figure, sets 5V biass during the test.In order to study Cu1.96S-Cu2The infrared acquisition performance of S@C_T_FW, this research use
980nm infrared lasers normal incidence irradiates Cu1.96S-Cu2The center of S@C_T_FW infrared sensing films, spot diameter are
5mm.By Fig. 5 (a) Suo Shi, with the luminous power increase of incident light, photoelectric current gradually rises.And show good repeat
Property.And by Fig. 5 (a) as it can be seen that at illumination initial stage, electric current raises rapidly, and particularly when closing light source, electric current is almost under straight line
Drop, so as to illustrate the generation of photogenerated current.In the illumination intermediary and later stages, increase in current speed slows down gradually, and occurs slowly increasing
Gesture；And in the intermediary and later stages that infrared laser is closed, current reduction speed also gradually slows down, and electric current slowly reduces, its current transformation
Trend is similar to temperature changing trend, so as to illustrate that photo-thermal effect causes material temperature to raise, resistance reduces, electric current increase.
Cu1.96S-Cu2The infra red photo electric effect process of S@C_T_FW infrared sensing materials is as follows：1. photon is absorbed, generation exciton (electronics-
Hole to)；2. thermic or electric field action cause the electron-hole pair separation of light-generated excitons, photogenerated current is formed, increases conductance；3.
Photo-thermal effect promotes material temperature to raise, and causes conductance to increase, while photo-thermal effect, lifts electronics-sky of thermic light-generated excitons
Cave promotes separation the generation of photogenerated current.In conclusion as the Infrared irradiation Cu of 980nm1.96S-Cu2S@C_T_FW are infrared
During sense film, Cu is promoted by photoelectric effect and photo-thermal effect jointly1.96S-Cu2The electric current liter of S@C_T_FW infrared sensing films
Height, so as to form photo-thermal auxiliary photoelectric effect.Under non-asymmetric irradiation, incident optical power 20.8mW/mm2When, Cu1.96S-
Cu2The infrared response of S@C_T_FW infrared sensing materials changes up to 44.9%.Than the infrared light of carbon nanotubes 0.7%, 4.26%
Respond that changing value will be big is more, than single-walled carbon nanotube-vulcanization carbon/carbon-copper composite material in symmetrical infrared radiation 28.7% it is red
Outer light response variations value is big, 43% infrared light during infrared radiation more symmetrical than redox graphene-vulcanization lead composite material
It is also big to respond changing value.In addition, when incident optical power is 20.8mW/mm2When only illumination 25s (the 8.3% of total irradiation time)
When electric current increase the 50% of total increase electric current.By Fig. 5 (b) Suo Shi, when luminous power is reduced to 0.166mW/mm2When,
Still there is obvious photoelectric respone.
Fig. 6 is Cu1.96S-Cu2S@C_T_FW infrared sensings materials shine (980nm, 12.1mW/mm in infrared light2) and it is non-red
I-V curve comparison diagram in the case of outer illumination.As shown in Figure 6, product Cu1.96S-Cu2S@C_T_FW show " line " type metal
Characteristic I-V curve.When Infrared irradiation, the slope of I-V lines significantly increases (conductance rise), makes when closing light source, I-V lines are extensive
The multiple state to pre-irradiation.And by continuous 3 times repeated light sources I-V curve is opened and closed to test, what it was mutually covered
I-V lines further surfaces Cu1.96S-Cu2The repeatability of the infrared response of S@C_T_FW infrared sensing films.Fig. 7 is
Cu1.96S-Cu2The data analysis figure of the infrared incident optical powers of photoelectric current vs.980nm of S@C_T_FW infrared sensing films.By Fig. 7
It is shown, Cu1.96S-Cu2The photo-current intensity and incident power of S@C_T_FW infrared sensing films are linear.When incident light work(
During rate increase, Cu1.96S-Cu2The photoelectric current of S@C_T_FW infrared sensing films is linearly increasing.Cu1.96S-Cu2S@C_T_FW are infrared
Sense film has similar linear relationship with single-walled carbon nanotube-vulcanization carbon/carbon-copper composite material of document report before.
The present embodiment is prepared for the carbon-based nano particle film of the composite semiconductor coupling with AQPS, and photo-thermal can be used as auxiliary
Help infrared light detecting film material with function.The Cu of preparation1.96S-Cu2S C_T_FW have excellent broadband infrared absorption performance
With infrared heat auxiliary photoelectric response characteristic.With there is excellent light absorbs and photothermal conversion performance in 0.29 μm of -2.5 μm of optical band
BlueTec eta plus_Cu compare, in 300-2500nm wavelength regions, its average light absorption strengthens 78.5%；
In addition, the infrared response change of Cu1.96S-Cu2S@C_T_FW infrared sensing materials is up to 44.9% and with well can weighing
Renaturation.Its low cost production thereof and its excellent broadband infrared absorption performance and infrared heat auxiliary photoelectric response characteristic are to new
Design, the preparation of type non-refrigeration type infrared detecting materials have important directive significance.
The present embodiment combination chemical synthesis and biology lose morphotype plate technique, using with excellent light absorbs structure (AQPS)
T_FW as template, prepare the carbon-based nano particle film Cu of the compound solid solution semiconductor coupling with AQPS1.96S-Cu2S@
C_T_FW, it can be used as heat auxiliary photoelectric type infrared sensing, detecting function material, breach the bionical infrared acquisition work(of heat radiation type
The design philosophy of energy material.Cu1.96S-Cu2S@C_T_FW realize compound solid solution semiconductor nanoparticle and AQPS extinction functions
Structure, and combine the electrical conductance and infrared Absorption performance of carbon material.
In addition, the system of the carbon-based nano particle system of the coupling of the composite semiconductor with AQPS of the present invention and the present embodiment
Preparation Method is without using special installation, and energy consumption is low, so that products obtained therefrom is cheap.
Embodiment 2
The carbon-based compound Cd of the present embodiment2The preparation method of S nano-granular systems, comprises the following steps：
(1) skirt swallowtail butterfly fore wing is selected as the butterfly wing with antireflective microstructure；
(2) following pre-treatment and activation process are carried out to selected skirt swallowtail butterfly fore wing：Butterfly wing is placed in anhydrous second first
15min, deionized water cleaning are soaked in alcohol；Then butterfly wing is immersed in the HNO that volume fraction is 5vol%32h in solution, takes
Go out clean；Butterfly wing is put into the ethylenediamine ethanol solution that mass fraction is 10% again and soaks 6h, is taken out afterwards, using going
Ionized water cleans for several times；Above-mentioned steps improve its surface adsorption property to remove depigmentation and impurity；
(3) Au nano particles are deposited：Above-mentioned butterfly wing after activation process is immersed into gold chloride presoma under 15 DEG C of constant temperature
10h in solution, afterwards taking-up are cleaned several times with deionized water；Then by butterfly wing 0.1M concentration NaBH4Solution is at 30 DEG C
30min is reduced, is cleaned again with deionized water, obtain depositing the butterfly wing for there are Au nano particles several times afterwards；
(4) CdS nano particles are deposited：Au butterfly wings obtained by step 3) are impregnated in containing Cd2+And S2-100 DEG C of height of solution
Press in kettle, keep the temperature 0.5h, room temperature is cooled to room temperature afterwards, and after taking-up, deionized water is cleaned several times, obtains the Au- of the present embodiment
CdS nano-granular systems.
(5) the Au-CdS nano-granular systems prepared by the above are placed in vacuum tube furnace, by vacuumizing, make furnace chamber
Keep vacuum environment.Using the programming rate of 3 DEG C/min, 450 DEG C are heated to from room temperature, and 1h is kept the temperature at a temperature of 450 DEG C.
Then cooled to room temperature.Obtain final carbon-based compound Cd2S " butterfly wing " functional material.
Under the teachings of the present invention, those skilled in the art will envision that, each raw material and method cited by the present invention are all
It can realize that the present invention, and the bound value of each raw material and technique, interval value can realize the present invention, it is numerous to list herein
Embodiment.
Claims (9)
1. a kind of preparation method of the carbon-based nano particle film of the compound solid solution semiconductor coupling with antireflective micro-nano structure,
It is characterised in that it includes following steps：
（1）Selection one has the black light-absorbing butterfly wing of antireflective micro-nano structure；
（2）The nano particle that chemical deposition metal/semiconductor couples on the butterfly wing；
（3）By chemical deposition, the butterfly wing of the nano particle of the metal/semiconductor coupling carries out carbonization treatment, makes chitin base
Butterfly wing template switch is the carbon-based template of indefinite form, the metal/semiconductor being deposited in template lead coupling nano material be changed into it is compound
Solid solution semiconductor nano particle, the butterfly wing after carbonization subtract with compound solid solution semiconductor nanoparticle composition attached to it
Reflect the carbon-based nano particle film of the compound solid solution semiconductor coupling of micro-nano structure；Wherein, the carbonization treatment is：
To the butterfly wing vacuumize carbonization, carburizing temperature is 400~700 DEG C, and heating rate is 1~5 DEG C/min, during insulation
Between 1~3h.
2. the carbon-based nano particle of the compound solid solution semiconductor coupling according to claim 1 with antireflective micro-nano structure
The preparation method of film, it is characterised in that in the step（1）And step（2）Between further include to butterfly wing carry out following steps
Pre-treatment and activation process：
Ⅰ）The butterfly wing is placed in 15~30min of immersion in absolute ethyl alcohol；
Ⅱ）Cleaning；
Ⅲ）The butterfly wing is impregnated in the HNO that volume fraction is 5%~15%31~3h in solution；
Ⅳ）Cleaning；
Ⅴ）The butterfly wing is immersed in the solution of ethylenediamine and absolute ethyl alcohol, wherein the mass fraction of ethylenediamine is 10%~40%,
Soak 3~10h；
Ⅵ）Cleaning.
3. the carbon-based nano particle of the compound solid solution semiconductor coupling according to claim 1 with antireflective micro-nano structure
The preparation method of film, it is characterised in that the step（2）Specifically include：
A) the butterfly wing is impregnated in a metal ion solution, and heats up and keep the temperature and carry out adsorption reaction；
B) clean；
C) the butterfly wing of metal ion will be adsorbed with, is impregnated in a metal reducing solution, and heating and insulation reduce instead
Answer, obtain being adsorbed with the butterfly wing of metal nanoparticle；
D) clean；
E) the butterfly wing of metal nanoparticle will be adsorbed with, is impregnated in the reaction solution of synthesis semiconductor nanoparticle, and carry out
Heating and insulation, obtain metal/semiconductor coupling butterfly wing；
F) clean；
G) it is dry.
4. the carbon-based nano particle of the compound solid solution semiconductor coupling according to claim 3 with antireflective micro-nano structure
The preparation method of film, it is characterised in that
In the step a), the time that the butterfly wing is placed in metal ion solution is 0.1~24h, and the metal ion is molten
The temperature of liquid is 25~50 DEG C；
In the step c), the time that the butterfly wing for being adsorbed with metal ion is placed in metal reducing solution is 0.1-6h,
The temperature of the metal reducing solution is 25~50 DEG C；
In the step e), the butterfly wing for being adsorbed with metal nanoparticle, is impregnated in the anti-of synthesis semiconductor nanoparticle
It is 0.5-36h to answer the time in solution, and temperature is 50~90 DEG C；
In the step g), the metal/semiconductor coupling butterfly wing is placed in vacuum drying chamber and is dried, the drying box
Temperature is 25~60 DEG C.
5. the carbon-based nano particle of the compound solid solution semiconductor coupling according to claim 3 with antireflective micro-nano structure
The preparation method of film, it is characterised in that the step（2）Cleaning process be：It is after the completion of dipping that the metal ion is molten
After the reaction solution of liquid, metal reducing solution and synthesis semiconductor nanoparticle is cooled to room temperature, takes out the butterfly wing and clean.
6. the carbon-based nano particle of the compound solid solution semiconductor coupling according to claim 3 with antireflective micro-nano structure
The preparation method of film, it is characterised in that
Metal ion in the metal ion solution includes the one or more in metal cation, complexation of metal ions；
The metal reducing solution include sodium citrate, lactic acid, dimethylamine borane, sodium succinate solution, sodium borohydride solution or
One or more in solution of potassium borohydride；
The reaction solution of synthesis semiconductor nanoparticle includes semiconductor cation and anion.
7. the carbon-based nano particle of the compound solid solution semiconductor coupling according to claim 1 with antireflective micro-nano structure
The preparation method of film, it is characterised in that the metal is selected from the stronger noble metal of plasma resonance；The semiconductor is selected from
Compound semiconductor, including the IIIth and the Vth compounds of group, the IIth and the VIth compounds of group, oxide or by III-V race's chemical combination
One or more in the solid solution of thing and II-VI compounds of group composition.
It is 8. a kind of using the compound solid solution with antireflective micro-nano structure that in claim 1~7 prepared by any method
The carbon-based nano particle film of semiconductor coupling, it is characterised in that the film has an antireflective micro-nano structure, on the film
The particle diameter of compound solid solution semiconductor nanoparticle be 15~200 nm.
9. the carbon-based nano particle of the compound solid solution semiconductor coupling according to claim 8 with antireflective micro-nano structure
Film, it is characterised in that the film is infrared photo-thermal fill-in light electrical effect film, and the film is infrared Absorption and photo-thermal
Conversion, the infrared light detection film of optoelectronic integration.
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| CN107270554B (en) * | 2017-06-27 | 2024-03-01 | 中车工业研究院有限公司 | Photo-thermal evaporation device based on plasma resonance and preparation method thereof |
| CN107421131A (en) * | 2017-06-27 | 2017-12-01 | 中车工业研究院有限公司 | Photothermal conversion system based on biological fine structure and surface plasma resonance effect |
| CN109972093B (en) * | 2019-03-22 | 2021-06-15 | 中车工业研究院有限公司 | High polymer bionic configuration photothermal conversion material and preparation method and application thereof |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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-
2015
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| Publication number | Priority date | Publication date | Assignee | Title |
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Non-Patent Citations (3)
| Title |
|---|
| Bioinspired Au/TiO2 photocatalyst derived from butterfly wing(Papilio Paris);Jianjun Chen et. al;《Journal of Colloid and Interface Science》;20111229;Page117-123 * |
| Super black and ultrathin amorphous carbon film inspired by anti-reflection architecture in butterfly wing;Qibin Zhao et. al;《Carbon》;20101027;Page877-883 * |
| 仿蝶翅微纳结构金属功能材料的制备及光响应特性研究;谭勇文;《中国博士学位论文全文数据库 工程科技I辑》;20130815(第08期);B020-259 * |
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