CN105159598A - Method for reading total usage time from any device - Google Patents
Method for reading total usage time from any device Download PDFInfo
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- CN105159598A CN105159598A CN201510379046.3A CN201510379046A CN105159598A CN 105159598 A CN105159598 A CN 105159598A CN 201510379046 A CN201510379046 A CN 201510379046A CN 105159598 A CN105159598 A CN 105159598A
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Abstract
The invention provides a method for reading total usage time from any device. Under the circumstance that in an existing structure, any other auxiliary integrated circuit is not added and an original function is not changed, a temperature sensor is only used, and a temperature conversion function is separated from recording and data reading functions, so that the effect of reading the total usage time from any device is achieved.
Description
Technical field
The present invention relates to electronic device field, refer to a kind of method reading use T.T. in arbitrary equipment especially.
Background technology
The irradiation head of the UV-LED light curring unit on existing market is substantially all only only limitted to the using method of irradiating, can not independently use information be recorded in irradiation head, even if having the function reading and use T.T., its profile, cable will increase certain volume in proportion.
In addition, the implementation of existing record irradiation time is on equipment, to do the record of current channel, can not read the T.T. of the irradiation head of current any insertion.When inserting different irradiation heads, or doing cumulative service time according to the service time of this passage, real usage data can not be written to independently irradiation head completely and get on.So other equipment can only record the service time of respective channel, and the use T.T. development approach of real irradiation head can not be read exactly.
Therefore, there is following shortcoming in existing equipment:
1. when commercial unit uses and need to replace and in arbitrary equipment, can not check that irradiation current head uses information.
2. increase the volume that record use T.T. function will increase irradiation head.
3. increase the size that record function service time will increase transmission cable.
4., in commercial unit uses, accurately use can not be recorded to T.T. and often prop up irradiation head.
Summary of the invention
The present invention proposes a kind of method reading use T.T. in arbitrary equipment, based on temperature sensor, when not changing prior art, realizes in arbitrary equipment, read the effect using T.T..
Technical scheme of the present invention is achieved in that a kind of method reading use T.T. in arbitrary equipment, according to the memory areas structure of temperature sensor, carries out following steps:
A.Byte0 and Byte1 records read-only LSB position and the MSB position of temperature information, Byte2 and Byte3 is the copy of TH and TL, and Byte4 is configuration register data, and Byte5, Byte6, Byte7 are device reserve bytes, and Byte8 is the read-only CRC code of above 8 bytes;
B. be the copies data of TH and TL working storage according to Byte2 and Byte3 in steps A, copy instruction by working storage, realize the storage integration from TH and TL working storage to EEPROM, thus achieve data are recorded on described temperature sensor;
C. read and use T.T., utilize the EEPROM that powers on of described temperature sensor can copy feature in TH and TL working storage to, we use instruction fetch TH and TL working storage, then carry out integration and can check the time.
Further, storage integration in step B does Data Integration by TH and TL working storage as 8 high bytes of temporal summation and 8 low bytes and stores, the meaning of Data Integration is, if will in the use T.T. of irradiation head write, can with consolidation form: the T.T. that 16 bit representations stored in computing machine use, the data of 16 positions are divided into most-significant byte byte and least-significant byte byte, TH working storage is 8 the high byte positions using T.T., TL working storage is 8 the low byte positions using T.T., can carry out the data processing of specification in each equipment.
Further, in step B concrete steps as follows:
According to the copies data that Byte2 and Byte3 in steps A is TH and TL working storage, instruction [4EH] is write by working storage, write needs the data of record in TH and TL working storage, EEPROM instruction [48H] is copied to again by working storage, realize storage from TH and TL working storage to EEPROM, thus achieve data are recorded on described temperature sensor.
Further, in step C, read and use T.T., utilize the EEPROM that powers on of described temperature sensor, use the Byte0 of the working storage described in instruction [BEH] read step A, Byte1, Byte2, Byte3, Byte4, Byte5, Byte6, Byte7, 9 bytes of Byte8, then Byte2 is wherein extracted, Byte3 and TH and TL working storage, carry out use T.T. again to integrate, Integration Mode is: TH working storage is read 8 the high byte positions using T.T., TL working storage is read 8 the low byte positions using T.T., then carrying out moves to left the numerical value of most-significant byte 8 is added with least-significant byte data again, equipment can be utilized to be shown by liquid crystal display the use T.T. read.
Further, the DS18B20 temperature sensor of what described temperature sensor adopted is U.S. DALLAS.
Method of the present invention, by the deficiency of prior art, and sum up software for many years, hardware development experience, in conjunction with simple and easy, convenient and practicality is feature, and do not change existing design, function and profile principle of design, have employed different conventional method writing time, this method is in existing structure, when not adding other auxiliary integrated circuit any and do not change original function, only serviceability temperature sensor, by the translation function of its temperature and record, read data functions is separated, realize in arbitrary equipment, read the effect using T.T., thus, by method of the present invention, there is following beneficial effect:
1, exclusive hardware resource and this peculiar software algorithm of DS18B20 temperature sensor is made full use of.
2, do not affecting in original structure, record and the reading of time can realized.
3, the use T.T. of the current reality of this irradiation head can be read can be implemented in arbitrary equipment under our company's technology under.
4, dirigibility is high, the need of production of convenient product and technical maintenance cost.
5, facilitate client in the management to equipment, that is: aborning swing SWING time due to equipment more, it is that irradiation head is beyond recognition after pulling up for which kind of machine, so just cause client to the puzzlement of various present situation, and the present invention just can solve such problem, because the use information of equipment is recorded in irradiation head by the present invention.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet reading the steps A of the method using T.T. in arbitrary equipment a kind of described in the present invention;
Fig. 2 is the schematic flow sheet reading the step B of the method using T.T. in arbitrary equipment a kind of described in the present invention;
Fig. 3 is the schematic flow sheet reading the step C of the method using T.T. in arbitrary equipment a kind of described in the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, Figure 2 and Figure 3, a kind of reading in arbitrary equipment uses the method for T.T., according to the memory areas structure of temperature sensor, in the present embodiment, employing be the DS18B20 temperature sensor of U.S. DALLAS, carry out following steps:
A. as shown in Figure 1, Byte0 and Byte1 records read-only LSB position and the MSB position of temperature information, Byte2 and Byte3 is the copy of TH and TL, and Byte4 is configuration register data, Byte5, Byte6, Byte7 are device reserve bytes, and Byte8 is the read-only CRC code of above 8 bytes;
B. as shown in Figure 2, according to the copies data that Byte2 and Byte3 in steps A is TH and TL working storage, copy instruction by working storage, realize the storage integration from TH and TL working storage to EEPROM, thus achieve data are recorded on FW18U20 sensor;
C. as shown in Figure 3, read and use T.T., utilize the EEPROM that powers on of FW18U20 sensor can copy feature in TH and TL working storage to, we use instruction fetch TH and TL working storage, then carry out integration and can check the time.
Further, storage integration in step B does Data Integration by TH and TL working storage as 8 high bytes of temporal summation and 8 low bytes and stores, the meaning of Data Integration is, if will in the use T.T. of irradiation head write, can with consolidation form: the T.T. that 16 bit representations stored in computing machine use, the data of 16 positions are divided into most-significant byte byte and least-significant byte byte, TH working storage is 8 the high byte positions using T.T., TL working storage is 8 the low byte positions using T.T., can carry out the data processing of specification in each equipment.
Further, in step B concrete steps as follows:
According to the copies data that Byte2 and Byte3 in steps A is TH and TL working storage, instruction [4EH] is write by working storage, write needs the data of record in TH and TL working storage, EEPROM instruction [48H] is copied to again by working storage, realize the storage from TH and TL working storage to EEPROM, thus achieve data are recorded on temperature sensor, namely as shown in Figure 2.
Further, in step C, read and use T.T., utilize the EEPROM that powers on of temperature sensor, use the Byte0 of the working storage in instruction [BEH] read step A, Byte1, Byte2, Byte3, Byte4, Byte5, Byte6, Byte7, 9 bytes of Byte8, then Byte2 is wherein extracted, Byte3 and TH and TL working storage, carry out use T.T. again to integrate, Integration Mode is: TH working storage is read 8 the high byte positions using T.T., TL working storage is read 8 the low byte positions using T.T., then carrying out moves to left the numerical value of most-significant byte 8 is added with least-significant byte data again, equipment can be utilized to be shown by liquid crystal display the use T.T. read, namely as shown in Figure 3.
The total data of computing time, when not increasing other integrated circuit, is stored in the internal hardware resources utilizing original DS18B20 temperature sensor by this method, realizes reading at any commercial unit the storage format using T.T..
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. in arbitrary equipment, read the method using T.T., it is characterized in that: based on the memory areas structure of temperature sensor, carry out following steps:
Byte0 and Byte1 records read-only LSB position and the MSB position of temperature information, Byte2 and Byte3 is the copy of TH and TL, and Byte4 is configuration register data, and Byte5, Byte6, Byte7 are device reserve bytes, and Byte8 is the read-only CRC code of above 8 bytes;
According to the copies data that Byte2 and Byte3 in steps A is TH and TL working storage, copy instruction by working storage, realize the storage integration from TH and TL working storage to EEPROM, thus achieve data are recorded on described temperature sensor;
Read and use T.T., utilize the EEPROM that powers on of described temperature sensor can copy feature in TH and TL working storage to, we use instruction fetch TH and TL working storage, then carry out integration and can check the time.
2. read in arbitrary equipment as described in the appended claim 1 and use the method for T.T., it is characterized in that: the storage integration in step B does Data Integration by TH and TL working storage as 8 high bytes of temporal summation and 8 low bytes and stores.
3. in arbitrary equipment, read the method using T.T. as described in the appended claim 1, it is characterized in that: specifically comprise the following steps in step B:
According to the copies data that Byte2 and Byte3 in steps A is TH and TL working storage, instruction [4EH] is write by working storage, write needs the data of record in TH and TL working storage, EEPROM instruction [48H] is copied to again by working storage, realize storage from TH and TL working storage to EEPROM, thus achieve data are recorded on described temperature sensor.
4. in arbitrary equipment, read the method using T.T. as described in the appended claim 1, it is characterized in that: in step C, read and use T.T., utilize the EEPROM that powers on of described temperature sensor, use the Byte0 of the working storage described in instruction [BEH] read step A, Byte1, Byte2, Byte3, Byte4, Byte5, Byte6, Byte7, 9 bytes of Byte8, then Byte2 is wherein extracted, Byte3 and TH and TL working storage, carry out use T.T. again to integrate, Integration Mode is: TH working storage is read 8 the high byte positions using T.T., TL working storage is read 8 the low byte positions using T.T., then carrying out moves to left the numerical value of most-significant byte 8 is added with least-significant byte data again, equipment can be utilized to be shown by liquid crystal display the use T.T. read.
5. as described in arbitrary in claim 1-4, in arbitrary equipment, read the method using T.T., it is characterized in that: described temperature sensor is the DS18B20 temperature sensor of U.S. DALLAS.
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| CN201510379046.3A CN105159598B (en) | 2015-06-30 | 2015-06-30 | A method of it is read in arbitrary equipment and uses total time |
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| CN201510379046.3A CN105159598B (en) | 2015-06-30 | 2015-06-30 | A method of it is read in arbitrary equipment and uses total time |
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| CN105159598B CN105159598B (en) | 2018-11-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111797031A (en) * | 2020-06-17 | 2020-10-20 | 江西洪都航空工业集团有限责任公司 | Method for recording power-on accumulated time of task machine by using EEPROM (electrically erasable programmable read-Only memory) under battery-free condition |
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| US20130212431A1 (en) * | 2012-02-11 | 2013-08-15 | Adrian Ong | Method and system for providing a smart memory architecture |
| CN104267707A (en) * | 2014-10-17 | 2015-01-07 | 中国科学院计算技术研究所 | Environmental data multi-point real-time collecting system |
| CN204359448U (en) * | 2014-12-16 | 2015-05-27 | 成都问达茂源科技有限公司 | A kind of multifunction multipath temperature monitoring |
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|---|---|---|---|---|
| US20130212431A1 (en) * | 2012-02-11 | 2013-08-15 | Adrian Ong | Method and system for providing a smart memory architecture |
| CN104267707A (en) * | 2014-10-17 | 2015-01-07 | 中国科学院计算技术研究所 | Environmental data multi-point real-time collecting system |
| CN204359448U (en) * | 2014-12-16 | 2015-05-27 | 成都问达茂源科技有限公司 | A kind of multifunction multipath temperature monitoring |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111797031A (en) * | 2020-06-17 | 2020-10-20 | 江西洪都航空工业集团有限责任公司 | Method for recording power-on accumulated time of task machine by using EEPROM (electrically erasable programmable read-Only memory) under battery-free condition |
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| CN105159598B (en) | 2018-11-20 |
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