CN105158417A - Structure analysis method for SiP (system in package) device - Google Patents
Structure analysis method for SiP (system in package) device Download PDFInfo
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Abstract
The invention relates to a structure analysis method for a SiP (system in package) device. On the basis of structural unit decomposition of the SiP device, the SiP device is subjected to simulated analysis and evaluation of force, heat, force-heat coupling and electromagnetism, and influences, including force, heat, force-heat coupling, electromagnetism and the like, of structure units of the SiP device are considered during evaluation; then an environmental stress test is performed, and the SiP device is comprehensively and overall analyzed and evaluated. The reliability of an analysis result is improved, and the reliability requirements of space application are met.
Description
Technical field
The present invention relates to a kind of component structure analytical approach, the particularly structure analysis method of system in package components and parts.
Background technology
Along with the development of electronic information technology and the demand of society, spacecraft electronic product is little to size gradually, thickness is thin, lightweight and high-performance, multi-functional microminaturization develop, the fast development of Advanced Packaging assembling and system integration technology, makes the system in package device meeting microminaturization development trend arise at the historic moment.System in package device (SiP) adopts any combination, multiple active electronic device with difference in functionality and optionally other devices such as passive element and optical device are assembled into the single standard packaging part that can provide several functions, form a system or subsystem.The function that realizes of previous printed circuit board assembly only need now a system in package device to complete, greatly meet the application demand of microminaturization.
From package assembly, system in package device is also be integrated in a packaging body by multiple variety classes components and parts, but no matter functionally or structurally have the difference of matter with hydrid integrated circuit it, is mainly manifested in the following aspects:
(1) systematicness of function.What SiP realized is the function of a unit and even a system, and hydrid integrated circuit can only complete the function of a device;
(2) high density layouts of components and parts brings qualitative leap in integrated level.The requirement of function system makes the kind of SiP internal component and number ratio hydrid integrated circuit present the growth of the order of magnitude, and package body sizes does not have significant change, and thus the layout density of internal component improves greatly.
(3) the advanced interconnected application with package technique.In order to realize the layout of high density in packaging body, multiple types, large quantity components and parts, apply the interconnected package technique that LTCC (LTCC) substrate, chip-stacked, multi-layered high-density bonding etc. are advanced in SiP, this does not possess in other components and parts such as hydrid integrated circuit.
Propose in the applied environment of highly reliable strict demand at spacecraft etc. to components and parts, the inherent reliability of components and parts is the key factors determining whole engineering success or failure.The inherent reliability of components and parts depends on structural design, material selection, the production technology of components and parts, progress and heavy losses are economically caused in order to avoid giving the Important Project such as aerospace project, assay must be carried out to the factor selecting the design of components and parts, structure, technique, material etc. to affect component reliability, by analyzing potential failure mode and mechanism excavates reliability hidden danger, object meets to components and parts the ability evaluating requirement and relevant item service requirement to judge, and the unsuitable components and parts avoiding reliability not high are for aerospace.
International aerospace circle proposes the concept of structure analysis in early 1990s, and has morely in early days carried out some structural analysis work for semiconductor devices, but analytical work is only for concrete device, does not form universal method.Abroad mainly serve as theme with pilot project for the structural analysis work of device, the structure that can obtain according to the experiment process preset and pilot project, design, technique and material information carry out structure analysis.
More abroad start to walk evening though domestic, but part aerospace components and parts quality guarantee unit has also carried out the technique study of structure analysis and carried out related work, structural analysis work has just penetrated in the quality-assurance processes of space flight components and parts gradually as a more and more important project.The common method of structure analysis is summarized in achievement in research " structure analysis is at the application and practice of space flight reliability engineering " on Shanghai Aerospace Technology Institute is published in " quality and reliability ", achievement in research " structure analysis method of digital signal processor " (patent No.: ZL201110409851.8) of the Chinese Academy of Space Technology provides a kind of structure analysis method of digital signal processor, comprise and digital signal processor is resolved into each structural unit, from design, every textural element of technique and each structural unit of material aspect identification, textural element for each structural unit is evaluated.
Because SiP and commonplace components (comprising hydrid integrated circuit) exist notable difference, analyze the structure analysis method pointed out in above-mentioned patent and article, find what time not enough main existence is following:
(1) method proposed in this patent is only the individual devices of representative for digital signal processor, the method splitting structural unit is adopted to evaluate respectively, and SiP is the combination of a large amount of multiple types components and parts, the different layout type of components and parts can produce the different (power that influences each other, heat, electromagnetism etc.), and then determine the reliability of whole SiP, thus not only tackle the method flow that all components and parts in SiP propose according to patent and carry out assay, and assay is carried out in the impact of reply components' placement on power thermoelectricity magnetic reliability, flow and method in patent lacks corresponding assay method, and also only propose in document to use infrared thermal imagery to observe heat distribution, on the impact of power thermoelectricity magnetic reliability, the full current techique method of spreadability is not proposed to components' placement,
(2) environmental stress test is lacked in the structure analysis flow and method proposed in this patent and document, authentic assessment cannot be carried out to the environmental stress resistance (power thermal reliability) of SiP device in actual environment uses, and this is also the important content of device architecture reliability, the evaluation for the structural environment stress test of SiP inside multiple types components and parts high density layouts is more important;
To sum up, above-mentioned patent Problems existing is: the deficiency of spreadability and degree of depth when analyzing SiP device, and more fully do not test and assay, analysis result reliability is not high.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, and provide a kind of structure analysis method for system in package device, the method considers the feature of SiP device, improves the reliability of SiP device, to meet the requirement of AEROSPACE APPLICATION.
Technical solution of the present invention is: a kind of structure analysis method of system in package device, and performing step is as follows:
(1) structural unit decomposition is carried out to system in package device and SiP device, obtain the structural unit after decomposing, and identify textural element wherein;
(2) in the SiP device obtained step (1), each structural unit carries out reliability evaluation, whether meets AEROSPACE APPLICATION requirement; If met, enter step (3), if do not met, then this SiP device is not suitable for AEROSPACE APPLICATION, then structure analysis process terminates;
(3) power, heat, power thermal coupling, the simulation analysis of electromagnetism and evaluation are carried out to SiP device, wherein power simulation analysis with evaluate comprise SiP device vibrating, to impact and whether mechanical response in constant acceleration and product withstand strength meet the reliability margin requirement of AEROSPACE APPLICATION, find out the mechanics thin spot of SiP device simultaneously; The simulation analysis of heat with evaluate the reliability margin requirement comprising the temperature stress limit that the heat distribution of SiP device internal component of SiP device under different temperatures working environment, different working modes and components and parts tolerate and whether meet AEROSPACE APPLICATION; Power thermal coupling simulation analysis and evaluation comprise in temperature shock and cyclic test process, and whether the internal component of SiP device and the thermal stress of dress coproduction life meet the reliability margin requirement of AEROSPACE APPLICATION; Electromagnetic Simulation A+E comprises the reliability margin requirement whether electromagnetic compatibility between the internal component of SiP device and electromagnetic interference (EMI) meet AEROSPACE APPLICATION; If SiP device have passed simulation analysis and the evaluation of above-mentioned all power, heat, power thermal coupling, electromagnetism, enter step (4), otherwise strong, heat, power thermal coupling, electromagnetism any one do not pass through, then this SiP device is not suitable for AEROSPACE APPLICATION, then structure analysis process terminates;
(4) carry out environmental stress test to SiP device, environmental stress test comprises mechanical environment stress test and thermal environment stress test, adds the function of pyroelectric monitor SiP device in environmental stress test; Simultaneously in mechanical environment stress test, the mechanics thin spot found out in step (3) lays mechanics sensor monitoring mechanical response; In thermal environment stress test, the heat distribution in the stress test of record thermal environment in SiP device; If SiP device have passed mechanical environment stress test and thermal environment stress test and mechanical response and heat distribution all meet the reliability margin requirement of AEROSPACE APPLICATION, then total analytic process terminates, and this SiP device is applicable to AEROSPACE APPLICATION; Otherwise have mechanics environmental stress test and thermal environment stress test any one do not pass through, then this SiP device is not suitable for AEROSPACE APPLICATION, and structure analysis process terminates.
Different temperatures working environment in described step (3) refers to high temperature, low temperature and normal temperature that SiP device handbook provides.
Different working modes in described step (3) refers to that SiP device handbook provides the internal component duty realizing difference in functionality and export.
Mechanical environment stress test involving vibrations in described step (4), impact, constant acceleration.
Thermal environment stress test in described step (4) comprises high temperature, low temperature, temperature shock and cyclic test.
The present invention's advantage is compared with prior art: the present invention is on the basis that SiP device structural unit decomposes, to SiP device carry out power, heat, power thermal coupling, electromagnetism simulation analysis with evaluate after, in evaluation, consider the impact between each structural unit of SiP device, comprise power, heat, power thermal coupling and electromagnetism etc.; Then carry out environmental stress test again, to the comprehensive comprehensively assay of SiP device, improve the reliability of analysis result.And prior art just carries out separately evaluation and application to structural unit, do not consider comprehensively to analyze, the reliability requirement of AEROSPACE APPLICATION can not be met.
Accompanying drawing explanation
Fig. 1 is SiP device structure analysis method process flow diagram of the present invention;
Fig. 2 is the structural unit exploded view of the hermetically sealed SiP device of certain metallic ceramics in the embodiment of the present invention;
Fig. 3 is the structural unit exploded view of the stacking class SiP device of certain plastic device in the embodiment of the present invention;
Embodiment
Below in conjunction with accompanying drawing, by specific embodiment, the present invention will be further described.
The structure analysis of the hermetically sealed SiP device of certain metallic ceramics of embodiment 1
Performing step of the present invention is as follows:
1, the decomposition of structural unit and key element, discrimination and evaluation
SiP device in the present invention adopts metallic ceramics hermetically sealed, each structural unit is broken down into according to the design feature of SiP device, as shown in Figure 2, comprise mark, sealing technology, exit and mounting means, HTTC shell and innerly to connect, thick film substrate, film substrate, ltcc substrate, bonding, weld, bonding, internal component.(as shown in table 1 from every textural element of design, technique and each structural unit of material aspect identification, table 1 is the textural element matrix of the hermetically sealed SiP device of certain metallic ceramics in the embodiment of the present invention), the textural element wherein identified comprises the methods of mark and uses applicability, information correctness, integrality and mark firmness, home position, marking materials and processing quality; The textural element of sealing technology comprises sealing technology and material, airtight quality; The textural element of exit and mounting means comprises mounting means, terminal material, exit size and structure, sealing-in form between exit and shell; HTTC shell and the inner textural element connected comprise the material of shell and applicability thereof, shell size and crudy, the wiring of shell internal metallization and arrange with drawing shell; The textural element of thick film substrate comprises the processing quality of thick film substrate material and applicability, thick film substrate; The textural element of film substrate comprises the processing quality of the material of film substrate and applicability, film substrate; The textural element of ltcc substrate comprises the processing technology quality of the Material selec-tion of ltcc substrate and structural design, ltcc substrate; Bonding textural element comprises adhesives and technique; Welded structure key element comprises welding material and technique; The textural element of bonding comprises bonding material and technique, bonding size and layout; The textural element of internal component comprises the quality grade of semi-conductor chip, mounting process adaptability and space adaptability, the quality grade of passive element and mounting process adaptability.
2, to the reliability evaluation of structural unit
Reliability evaluation is carried out to each structural unit that step 1 obtains, all meets AEROSPACE APPLICATION requirement, enter step 3.
3, the simulation analysis of power, heat, power thermal coupling, electromagnetism and evaluation
Physical modeling is carried out to this SiP device and uses the finite simulation element analysis software of specialty to carry out power, heat, power thermal coupling and Electromagnetic Simulation A+E, the simulation analysis result of power show this SiP device in vibration, to impact and the withstand strength of mechanical response in constant acceleration and product meets the reliability margin requirement of AEROSPACE APPLICATION, there is not mechanics thin spot; The simulation analysis result of heat shows the reliability margin requirement that the temperature stress limit that the heat distribution of this SiP device internal component under different temperatures working environment, different working modes and components and parts tolerate meets AEROSPACE APPLICATION; Power thermal coupling simulation analysis result displays temperature impacts with the internal component of this SiP device in cyclic test process and fill the thermal stress that coproduction gives birth to and meet the reliability margin requirement of AEROSPACE APPLICATION; Electromagnetic Simulation analysis result shows the electromagnetic compatibility between the internal component of this SiP device and disturbs the reliability margin requirement meeting AEROSPACE APPLICATION.This SiP device have passed all power, heat, power thermal coupling, Electromagnetic Simulation A+E, enters step 4.
4, environmental stress test:
Mechanics and thermal environment stress test are carried out to SiP device, all adds in test the function of pyroelectric monitor SiP device.There is not mechanics thin spot owing to showing this SiP device at simulation analysis, thus do not lay mechanics sensor monitoring.In thermal environment stress test, use the heat distribution of thermal infrared imager record SiP device inside.Test findings shows this SiP device and have passed mechanics and thermal environment stress test, and heat distribution meets the reliability margin requirement of AEROSPACE APPLICATION.Total analytic process terminates, and this SiP device is applicable to AEROSPACE APPLICATION.
The textural element matrix of the hermetically sealed SiP device of table 1 metallic ceramics
The structure analysis of the hermetically sealed SiP device of certain metallic ceramics of embodiment 2
Performing step of the present invention is as follows:
1, the decomposition of structural unit and key element, discrimination and evaluation
SiP device in the present invention adopts metallic ceramics hermetically sealed, each structural unit is broken down into according to the design feature of SiP device, as shown in Figure 2, comprise mark, sealing technology, exit and mounting means, HTTC shell and innerly to connect, thick film substrate, film substrate, ltcc substrate, bonding, weld, bonding, internal component.(as shown in table 1 from every textural element of design, technique and each structural unit of material aspect identification, table 1 is the textural element matrix of the hermetically sealed SiP device of certain metallic ceramics in the embodiment of the present invention), the textural element wherein identified comprises the methods of mark and uses applicability, information correctness, integrality and mark firmness, home position, marking materials and processing quality; The textural element of sealing technology comprises sealing technology and material, airtight quality; The textural element of exit and mounting means comprises mounting means, terminal material, exit size and structure, sealing-in form between exit and shell; HTTC shell and the inner textural element connected comprise the material of shell and applicability thereof, shell size and crudy, the wiring of shell internal metallization and arrange with drawing shell; The textural element of thick film substrate comprises the processing quality of thick film substrate material and applicability, thick film substrate; The textural element of film substrate comprises the processing quality of the material of film substrate and applicability, film substrate; The textural element of ltcc substrate comprises the processing technology quality of the Material selec-tion of ltcc substrate and structural design, ltcc substrate; Bonding textural element comprises adhesives and technique; Welded structure key element comprises welding material and technique; The textural element of bonding comprises bonding material and technique, bonding size and layout; The textural element of internal component comprises the quality grade of semi-conductor chip, mounting process adaptability and space adaptability, the quality grade of passive element and mounting process adaptability.
2, to the reliability evaluation of structural unit
Reliability evaluation is carried out to each structural unit that step 1 obtains, all meets AEROSPACE APPLICATION requirement, enter step 3.
3, the simulation analysis of power, heat, power thermal coupling, electromagnetism and evaluation
Physical modeling is carried out to this SiP device and uses the finite simulation element analysis software of specialty to carry out power, heat, power thermal coupling and Electromagnetic Simulation A+E, the simulation analysis result of power show this SiP device in vibration, to impact and the withstand strength of mechanical response in constant acceleration and product meets the reliability margin requirement of AEROSPACE APPLICATION, there is not mechanics thin spot; Calorifics simulation analysis finds that two pieces of power chip riding positions of this SiP device inside are unreasonable, temperature rise is serious, because the temperature rise caused of generating heat has exceeded the tolerant temperature stress limit of chip under room temperature and high-temperature work environment, do not meet the reliability margin requirement of AEROSPACE APPLICATION, this SiP device is not by calorifics simulation analysis and evaluation, be not suitable for AEROSPACE APPLICATION, structure analysis process terminates.
The structure analysis of the stacking class SiP device of certain plastic device of embodiment 3
Performing step of the present invention is as follows:
1, the decomposition of structural unit and key element, discrimination and evaluation
SiP device in the present invention adopts the stacking form of plastic device, each structural unit is broken down into according to the design feature of SiP device, as shown in Figure 3, comprise mark, exit is connected with side wall with mounting means, potting compound, PCB base plate, the side wall that insulate, bonding, the stacking device wire of stacking device, stacking device.(as shown in table 2 from every textural element of design, technique and each structural unit of material aspect identification, table 2 is textural element matrixes of the stacking class SiP device of certain plastic device in the embodiment of the present invention), the textural element wherein identified comprises the methods of mark and uses applicability, information correctness, integrality and mark firmness, home position, marking materials and processing quality; The textural element of exit and mounting means comprises mounting means, terminal material, exit size and structure, type of attachment between exit and pcb board; The textural element of potting compound comprises the material of potting compound, technique and quality; The textural element of PCB base plate comprises the material of pcb board, the processing quality of pcb board; The textural element of insulation side wall comprises material, the insulation insulation clearance of side wall, the processing technology quality of side wall of insulation side wall; The bonding textural element of stacking device comprises adhesives and technique; The textural element that stacking device wire is connected with side wall comprises connected mode and processing quality; The textural element of stacking device comprises the quality grade of epoxy seal semiconductor chip, mounting process adaptability and space adaptability.
2, to the reliability evaluation of structural unit
Reliability evaluation is carried out to each structural unit that step 1 obtains, all meets AEROSPACE APPLICATION requirement, enter step 3.
3, the simulation analysis of power, heat, power thermal coupling, electromagnetism and evaluation
Physical modeling is carried out to this SiP device and uses the finite simulation element analysis software of specialty to carry out power, heat, power thermal coupling and Electromagnetic Simulation A+E, the simulation analysis result of power show this SiP device in vibration, to impact and the withstand strength of mechanical response in constant acceleration and product meets the reliability margin requirement of AEROSPACE APPLICATION, there is not mechanics thin spot; The simulation analysis result of heat shows the reliability margin requirement that the temperature stress limit that the heat distribution of this SiP device internal component under different temperatures working environment, different working modes and components and parts tolerate meets AEROSPACE APPLICATION; Power thermal coupling simulation analysis result displays temperature impacts with the internal component of this SiP device in cyclic test process and fill the thermal stress that coproduction gives birth to and meet the reliability margin requirement of AEROSPACE APPLICATION; Electromagnetic Simulation analysis result shows the electromagnetic compatibility between the internal component of this SiP device and disturbs the reliability margin requirement meeting AEROSPACE APPLICATION.This SiP device have passed all power, heat, power thermal coupling, Electromagnetic Simulation A+E, enters step 4.
4, environmental stress test:
Mechanics and thermal environment stress test are carried out to this SiP device, all adds in test the function of pyroelectric monitor SiP device.There is not mechanics thin spot owing to showing this SiP device at simulation analysis, thus do not lay mechanics sensor monitoring.In thermal environment stress test, use the heat distribution of thermal infrared imager record SiP device inside.Test findings shows this SiP device and have passed mechanical environment stress test, but in the temperature shock of thermal environment stress test with circulation, there occurs insulation side wall and the cracking that goes between of plastic device, and then cause this SiP device disabler.This SiP device is not by thermal environment stress test, and be not suitable for AEROSPACE APPLICATION, structure analysis process terminates.
The textural element matrix of the stacking class SiP device of table 2 plastic device
The unspecified part of the present invention belongs to general knowledge as well known to those skilled in the art.
Claims (5)
1. a structure analysis method for system in package device, is characterized in that performing step is as follows:
(1) structural unit decomposition is carried out to system in package device and SiP device, obtain the structural unit after decomposing, and identify textural element wherein;
(2) in the SiP device obtained step (1), each structural unit carries out reliability evaluation, whether meets AEROSPACE APPLICATION requirement; If met, enter step (3), if do not met, then this SiP device is not suitable for AEROSPACE APPLICATION, then structure analysis process terminates;
(3) power, heat, power thermal coupling, the simulation analysis of electromagnetism and evaluation are carried out to SiP device, wherein power simulation analysis with evaluate comprise SiP device vibrating, to impact and whether mechanical response in constant acceleration and product withstand strength meet the reliability margin requirement of AEROSPACE APPLICATION, find out the mechanics thin spot of SiP device simultaneously; The simulation analysis of heat with evaluate the reliability margin requirement comprising the temperature stress limit that the heat distribution of SiP device internal component of SiP device under different temperatures working environment, different working modes and components and parts tolerate and whether meet AEROSPACE APPLICATION; Power thermal coupling simulation analysis and evaluation comprise in temperature shock and cyclic test process, and whether the internal component of SiP device and the thermal stress of dress coproduction life meet the reliability margin requirement of AEROSPACE APPLICATION; Electromagnetic Simulation A+E comprises the reliability margin requirement whether electromagnetic compatibility between the internal component of SiP device and electromagnetic interference (EMI) meet AEROSPACE APPLICATION; If SiP device have passed simulation analysis and the evaluation of above-mentioned all power, heat, power thermal coupling, electromagnetism, enter step (4), otherwise strong, heat, power thermal coupling, electromagnetism any one do not pass through, then this SiP device is not suitable for AEROSPACE APPLICATION, then structure analysis process terminates;
(4) carry out environmental stress test to SiP device, environmental stress test comprises mechanical environment stress test and thermal environment stress test, adds the function of pyroelectric monitor SiP device in environmental stress test; Simultaneously in mechanical environment stress test, the mechanics thin spot found out in step (3) lays mechanics sensor monitoring mechanical response; In thermal environment stress test, the heat distribution in the stress test of record thermal environment in SiP device; If SiP device have passed mechanical environment stress test and thermal environment stress test and mechanical response and heat distribution all meet the reliability margin requirement of AEROSPACE APPLICATION, then total analytic process terminates, and this SiP device is applicable to AEROSPACE APPLICATION; Otherwise have mechanics environmental stress test and thermal environment stress test any one do not pass through, then this SiP device is not suitable for AEROSPACE APPLICATION, and structure analysis process terminates.
2. the structure analysis method of system in package device according to claim 1, is characterized in that: the different temperatures working environment in described step (3) refers to high temperature, low temperature and normal temperature that SiP device handbook provides.
3. the structure analysis method of system in package device according to claim 1, is characterized in that: the different working modes in described step (3) refers to that SiP device handbook provides the internal component duty realizing difference in functionality and export.
4. the structure analysis method of system in package device according to claim 1, is characterized in that: the mechanical environment stress test involving vibrations in described step (4), impact, constant acceleration.
5. the structure analysis method of system in package device according to claim 1, is characterized in that: the thermal environment stress test in described step (4) comprises high temperature, low temperature, temperature shock and cyclic test.
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