CN105154985A - Double-structure textured Cu2O thin film and preparation method thereof - Google Patents
Double-structure textured Cu2O thin film and preparation method thereof Download PDFInfo
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- CN105154985A CN105154985A CN201510520212.7A CN201510520212A CN105154985A CN 105154985 A CN105154985 A CN 105154985A CN 201510520212 A CN201510520212 A CN 201510520212A CN 105154985 A CN105154985 A CN 105154985A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 title abstract description 7
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 58
- 238000004544 sputter deposition Methods 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 238000004062 sedimentation Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000011148 porous material Substances 0.000 claims description 6
- 230000006698 induction Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 235000008216 herbs Nutrition 0.000 description 12
- 210000002268 wool Anatomy 0.000 description 12
- 238000000034 method Methods 0.000 description 6
- 239000003513 alkali Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012876 topography Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001341 grazing-angle X-ray diffraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
Abstract
The invention relates to metal oxide thin films and preparation methods thereof, in particular to a double-structure textured Cu2O thin film and a preparation method thereof. According to the preparation method, a radio frequency balanced magnetron sputtering coating system is used, positive and negative substrate bias is applied, on one hand, sputtered Cu atoms are induced to be subjected to selective priority deposition in a tip position of the surface of a thin film subjected to deposition, then the Cu atoms are contacted with residual oxygen in a cavity to be oxidized into Cu2O molecules, on the other hand, a thin film system is induced to reduce energy as far as possible and grows in the (111) direction, a pyramid structure having the (111) surface is formed on the surface of the thin film, and the double-structure textured Cu2O thin film is obtained. The visible light mean reflectance of the prepared Cu2O thin film is closely related with the applied substrate bias, the double-structure textured Cu2O thin film with different reflectance can be controllably prepared through control of the substrate bias, and the thin film has the advantages of environmental protection, simplicity, good anti-reflection performance and the like and has potential application prospects in the fields of thin film solar cells and the like.
Description
Technical field
The present invention relates to metal oxide film and preparation method thereof, especially relate to a kind of geminus matte Cu
2o film and preparation method thereof.
Background technology
Making the battery materials such as silicon chip absorb sunlight as much as possible by matte process, is the effective way increasing solar cell photoelectric efficiency of conversion; In the mode of silicon wafer suede process, silicon single crystal generally adopts alkali making herbs into wool to manufacture " pyramid " shape matte, polysilicon then more adopts sour making herbs into wool to corrode, form the porous silicon of similar " worm hole " dell, in acid, alkali making herbs into wool process, owing to employing high-concentration alkali liquor, Virahol or the chemical substance such as nitric acid, hydrofluoric acid in a large number, this can cause certain influence to ecotope; Beyond deacidification, alkali making herbs into wool, we also have other making herbs into wool mode, such as electrochemistry making herbs into wool, reactive ion etching making herbs into wool, laser making herbs into wool, mask making herbs into wool etc., but, because cost is relatively costly, fail to form industrialization (see document: 1. Baidupedia, entry: making herbs into wool), and, what is more important is in above-mentioned etching method, what we generally obtained is single suede structure, and as pyramid structure or vesicular structure, they have some limitations for the absorption of solar spectrum; Want to realize solar spectrum to absorb more up hill and dale, being combined by different two kinds of suede structures is a kind of more satisfactory selection scheme, due to Red copper oxide (Cu
2o) film is a kind of solar transmission material very with using value, have higher photoelectricity theoretical conversion efficiencies (can up to 18%, see document: 1.LoferskiJJ, JApplPhys, 1956,27:777-784), and the advantage such as nontoxic, cheap and copper source is abundant, the present invention is with Cu
2o film is example, provides a kind of and there is not the preparation method that pollution, only a step just realize the geminus matte hull cell material of thin film deposition and making herbs into wool.
Summary of the invention
The object of this invention is to provide a kind of geminus matte Cu
2o film and relative environmental protection, easy preparation method, geminus matte Cu of the present invention
2o film, has pyramid and porous geminus matte, has significantly (111) preferred orientation simultaneously.
Technical scheme of the present invention utilizes radio frequency unbalanced magnetron sputter coating system, by applying positive and negative substrate bias, lure that sputtering Cu atom carries out selectivity preferential deposition at the most advanced and sophisticated place of the film surface deposited on the one hand into, then come in contact with the oxygen of remnants in chamber and be oxidized to Cu
2o molecule, lures that thin film system reduces energy as much as possible on the other hand, the pyramidal structure along the growth of (111) direction and in film surface formation (111) face, thus obtains geminus matte Cu
2o film.
Geminus matte Cu
2the preparation method of O film, comprises the following steps:
1) unbalanced magnetron sputter coating system is adopted, first clean slide glass substrate is fixed in sample disc, then by purity be 99.99% copper target be arranged on the magnetic controlling target that power 13.56MHz radio-frequency power supply connects, and regulate the distance between substrate and copper target to be 15cm.
2) pumping chamber base vacuum to 5.0 × 10
-4pa, then through-current capacity be 15sccm, purity be 99.999% high-purity Ar gas, and keep chamber pressure to be 0.1pa.
3) first pre-sputtering 10min, then applies positive and negative direct current substrate bias, and removes sample baffle plate at room temperature sputtering sedimentation 90min, prepares geminus matte Cu
2o film.
In described step 1), the magnetic induction density of magnetic controlling target is 6kGs; The power sputtered in described step 3) is radio frequency 80W, and the speed of deposition is 0.037nm/s; Substrate bias in described step 3) is-150V ~+150V; Cu in described step 3)
2the thickness of O film is 200nm, and crystal orientation is (111), is 12.5 ~ 14.4% at the average reflectance of visible light wave range.
Advantage of the present invention and novelty are:
(1) Cu for preparing of the present invention
2o film has pyramid and porous geminus matte, and reflection preventing ability is good.
(2) Cu for preparing of the present invention
2o film has good (111) preferred orientation.
(3) the inventive method is simple, and processing ease, only a step just achieves Cu
2the deposition of O hull cell material and making herbs into wool.
(4) there is not the problem of pollution in the present invention, compares environmental protection.
(5) the present invention is without the need to additionally passing into oxygen, and copper source is cheap simultaneously, has saved cost to a certain extent.
Accompanying drawing explanation
The geminus matte Cu of Fig. 1 prepared by embodiment 1
2the surface topography map of O film.
The geminus matte Cu of Fig. 2 prepared by embodiment 2
2the surface topography map of O film.
The geminus matte Cu of Fig. 3 prepared by embodiment 5
2the surface topography map of O film.
The geminus matte Cu of Fig. 4 prepared by embodiment 1-5
2the x-ray diffraction spectrogram of O film.
Fig. 5 is embodiment 1,2,4, the geminus matte Cu prepared by 5
2the ultraviolet-visible reflected light spectrogram of O film.
Embodiment
Below by embodiment, the invention will be further described by reference to the accompanying drawings.
Embodiment 1:
1) unbalanced magnetron sputter coating system is adopted, first clean slide glass substrate is fixed in sample disc, then by purity be 99.99% copper target be arranged on that power 13.56MHz radio-frequency power supply connects, magnetic induction density is on the magnetic controlling target of 6kGs, and regulates the distance between substrate and copper target to be 15cm.
2) pumping chamber base vacuum to 5.0 × 10
-4pa, then through-current capacity be 15sccm, purity be 99.999% high-purity Ar gas, and keep chamber pressure to be 0.1pa.
3) first use the power pre-sputtering 10min of radio frequency 80W, then apply-50V direct current substrate bias, and remove sample baffle plate at room temperature sputtering sedimentation 90min, preparation geminus matte Cu
2o film.
Geminus matte Cu prepared by the present embodiment
2in O film, the average side length of pyramid is 50nm, and the mean pore size of porous is 15nm, is 14.4% at the average reflectance of visible light wave range.
Embodiment 2:
1) with embodiment 1.
2) with embodiment 1.
3) bias voltage is+50V, and all the other are with embodiment 1.
Geminus matte Cu prepared by the present embodiment
2in O film, the average side length of pyramid is 48nm, and the mean pore size of porous is 13nm, is 13.6% at the average reflectance of visible light wave range.
Embodiment 3:
1) with embodiment 1.
2) with embodiment 1.
3) bias voltage is+100V, and all the other are with embodiment 1.
Geminus matte Cu prepared by the present embodiment
2in O film, the average side length of pyramid is 71nm, and the mean pore size of porous is 21nm, is 13.1% at the average reflectance of visible light wave range.
Embodiment 4:
1) with embodiment 1.
2) with embodiment 1.
3) bias voltage is-150V, and all the other are with embodiment 1.
Geminus matte Cu prepared by the present embodiment
2in O film, the average side length of pyramid is 68nm, and the mean pore size of porous is 20nm, is 13.7% at the average reflectance of visible light wave range.
Embodiment 5:
1) with embodiment 1.
2) with embodiment 1.
3) bias voltage is+150V, and all the other are with embodiment 1.
Geminus matte Cu prepared by the present embodiment
2in O film, the average side length of pyramid is 69nm, and the mean pore size of porous is 20nm, is 12.5% at the average reflectance of visible light wave range.
As can be seen from embodiment 1 ~ 5, the geminus matte Cu prepared by the present invention
2o film has the feature of pyramid and porous geminus, and closely related at the substrate bias of average reflectance all with applied of visible light wave range, and such as bias voltage is higher, and the average reflectance of film is lower; Under positive bias, the average reflectance of film is lower than the identical negative bias of absolute value, and therefore, in actual fabrication process, we can control geminus matte Cu preferably by controlling substrate bias
2the visible reflectance of O film.
As can be seen from the x-ray diffraction spectrogram of Fig. 4, the geminus matte Cu prepared by the present invention
2o film has good (111) preferred orientation, due to employing during test is the outer glancing incidence x-ray diffraction (GIXRD) of plane, x-ray will the pyramidal surface inciding film surface be deep into the inside of film further, therefore the reflection of x-ray diffraction spectrogram is the inner crystal face situation along the direction of growth of film surface pyramidal surface and film, this illustrates pyramidal surface and film growth direction is all mainly (111) direction.
In addition, the present invention does not pass into oxygen in addition, and the main oxygen source of copper atom oxidation is oxygen remaining in high-vacuum chamber, and calculation result shows, is 5.0 × 10 at base vacuum
-4pa and purity are 99.999wt.%, chamber pressure is in the high-purity argon gas of 0.1Pa, and in chamber, the concentration of residual oxygen atom is ~ 10
10/ cm
3; And for the copper atom of 0.037nm/s sedimentation rate, it the atomic percent of substrate proximity be only ~ 10
9/ cm
3, this illustrates under vacuum condition of the present invention, and not needing to pass into oxygen in addition just has enough oxygen sources to realize the oxidation of copper atom.
Certainly, be not sedimentation products under above-mentioned vacuum condition must be just pure Cu
2o, this also with other sputtering sedimentation relating to parameters, the present invention selects that the magnetic induction density of magnetic controlling target is 6kGs, sputtering power is 80W, sedimentation rate is 0.037nm/s, and object is to ensure that sedimentation products is pure Cu
2o, because experiment shows, if the magnetic induction density of radio frequency target is 4.5kGs, sedimentation products major part is Cu
2the mixture of O and CuO; If selection magnetically controlled DC sputtering, then sedimentation products is pure Cu or Cu and Cu
2o mixture; If sputtering power is bigger than normal, sedimentation rate is fast, and sedimentation products then may contain Cu composition because of non-complete oxidation.
The present invention prepares geminus matte Cu
2o film has the advantages such as environmental protection, simple and easy and reflection preventing ability be good, and it has potential application foreground in fields such as thin-film solar cells.
Claims (10)
1. a geminus matte Cu
2o film, is characterized in that: described Cu
2o film surface pyramid and porous geminus are also deposited, and wherein the average side length of pyramid is 48 ~ 71nm, and the mean pore size of porous is 13 ~ 21nm.
2. a kind of geminus matte Cu as claimed in claim 1
2o film, is characterized in that: described film thickness is 200nm.
3. a kind of geminus matte Cu as claimed in claim 1
2o film, is characterized in that: described film has significantly (111) preferred orientation.
4. a kind of geminus matte Cu as claimed in claim 1
2o film, is characterized in that: described Cu
2o film is 12.5 ~ 14.4% at the average reflectance of visible light wave range.
5. a kind of geminus matte Cu as claimed in claim 1
2the preparation method of O film, it is characterized in that: utilize radio frequency unbalanced magnetron sputter coating system, by applying positive and negative substrate bias, lure that sputtering Cu atom carries out selectivity preferential deposition at the most advanced and sophisticated place of the film surface deposited on the one hand into, then come in contact with the oxygen of remnants in chamber and be oxidized to Cu
2o molecule, lures that thin film system reduces energy as much as possible on the other hand, the pyramidal structure along the growth of (111) direction and in film surface formation (111) face, thus obtains geminus matte Cu
2o film.
6. a kind of geminus matte Cu as claimed in claim 5
2the preparation method of O film, is characterized in that: control geminus matte Cu by controlling substrate bias
2the visible reflectance of O film.
7. a kind of geminus matte Cu as claimed in claim 6
2the preparation method of O film, is characterized in that: bias voltage is higher, and the average reflectance of film is lower; Under positive bias, the average reflectance of film is lower than the identical negative bias of absolute value.
8. a kind of geminus matte Cu as claimed in claim 5
2the preparation method of O film, is characterized in that concrete steps are as follows:
1) unbalanced magnetron sputter coating system is adopted, first clean slide glass substrate is fixed in sample disc, then by purity be 99.99% copper target be arranged on the magnetic controlling target that power 13.56MHz radio-frequency power supply connects, and regulate the distance between substrate and copper target to be 15cm;
2) pumping chamber base vacuum to 5.0 × 10
-4pa, then through-current capacity be 15sccm, purity be 99.999% high-purity Ar gas, and keep chamber pressure to be 0.1pa;
3) first pre-sputtering 10min, then applies positive and negative direct current substrate bias, and removes sample baffle plate at room temperature sputtering sedimentation 90min, preparation geminus matte Cu
2o film.
9. a kind of geminus matte Cu as claimed in claim 8
2the preparation method of O film, is characterized in that: in described step 1), the magnetic induction density of magnetic controlling target is 6kGs; The power sputtered in described step 3) is radio frequency 80W, and the speed of deposition is 0.037nm/s.
10. a kind of geminus matte Cu as claimed in claim 8
2the preparation method of O film, is characterized in that: the substrate bias in described step 3) is-150V ~+150V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510520212.7A CN105154985B (en) | 2015-08-24 | 2015-08-24 | A kind of double structure matte Cu2O films and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510520212.7A CN105154985B (en) | 2015-08-24 | 2015-08-24 | A kind of double structure matte Cu2O films and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105154985A true CN105154985A (en) | 2015-12-16 |
| CN105154985B CN105154985B (en) | 2017-12-01 |
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ID=54796018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112517004A (en) * | 2020-12-14 | 2021-03-19 | 长春大学 | Cu/Cu2O composite film and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376783A (en) * | 2011-12-02 | 2012-03-14 | 刘畅 | Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof |
| CN103882494A (en) * | 2014-03-12 | 2014-06-25 | 浙江大学 | Preparation method of Cu2O/ZnO heterojunction material |
-
2015
- 2015-08-24 CN CN201510520212.7A patent/CN105154985B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376783A (en) * | 2011-12-02 | 2012-03-14 | 刘畅 | Cuprous oxide solar battery with surface self-texture structure and manufacturing method thereof |
| CN103882494A (en) * | 2014-03-12 | 2014-06-25 | 浙江大学 | Preparation method of Cu2O/ZnO heterojunction material |
Non-Patent Citations (2)
| Title |
|---|
| A. SIVASANKAR ET AL.: "Influence of substrate bias voltage on the properties of magnetron sputtered Cu2O films", 《PHYSICA B》 * |
| SHOGO ISHIZUKA ET AL.: "Thin-film Deposition of Cu2O by Reactive Radio-Frequency Magnetron Sputtering", 《JPN. J. APPL. PHYS.》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112517004A (en) * | 2020-12-14 | 2021-03-19 | 长春大学 | Cu/Cu2O composite film and preparation method and application thereof |
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