Embodiment
Be described principle of the present invention and feature below, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Compound containing furan structure provided by the present invention, its synthetic route is as follows, R
1and R
2all be selected from carbonatoms be 6 ~ 36 aromatic hydrocarbyl, aromatic heterocyclic radical, containing substituent aryl or containing any one in substituent aryl, R
1and R
2identical or different.
As implied above, a kind of preparation method of the photoelectric material containing furan structure, with raw material 1 for starting raw material, after reacting with n-BuLi/Hex, after adding Isosorbide-5-Nitrae-hexichol formaldehyde reaction, then obtain target compound by acidic substance process (such as trifluoroacetic acid).
Above reaction raw materials material, catalyzer and provide the material of alkaline environment to be the art to commonly use material or easy commercially material.
Preparation embodiment
The part-structure of the concrete furans photoelectric material of the present invention's synthesis is as follows:
For ease of quoting hereafter, by numeric suffix under the structural formula of each compound above, and it is corresponding with compound in embodiment, such as, the compound (i.e. compound 1) of the corresponding embodiment 1 of structural formula 1, the compound (i.e. compound 2) of the corresponding embodiment 2 of structural formula 2, remaining by that analogy.In addition, after the molecular formula in each embodiment, also there is corresponding mark.
The synthesis of embodiment 1 compound 1:
19.90g (40mmol) 7-phenyl-5-((2-phenyl-1 is added in there-necked flask; 3-dimercapto-2-base) ethynyl) THF of-7H-benzo [c] carbazole and 200mL drying; under nitrogen protection; slow cooling is to-78 DEG C; drip 16mL (2.5mol/L) butyllithium hexane solution; within 1.0 hours, drip and finish, insulation reaction 3.0hrs.In controlling, temperature is less than-78 DEG C, drips the 100mLTHF solution of 2.68g (20mmol) Isosorbide-5-Nitrae-terephthal aldehyde, within 30 minutes, drips and finishes.Drip after finishing, system-78 DEG C of insulated and stirred 1.0 hours, are then slowly warming up to 20 ~ 25 DEG C, stirring reaction 2 hours.And backward reaction solution adds 3mL (39mmol) trifluoroacetic acid, then reaction solution 20 ~ 25 DEG C stirs 10.0 hours, adds saturated aqueous ammonium chloride cancellation reaction.Successively with the sodium bicarbonate aqueous solution of massfraction 10%, saturated aqueous common salt and deionized water wash.Anhydrous sodium sulfate drying, decompression desolventizing is extremely without cut, and gained crude product, by Gossypol recrystallized from chloroform, obtains 10.9g compound 1, yield 27.7%.DEI-MS is used to identify this compound, molecular formula C
70h
44n
2o
2, detected value [M+1]
+=946.49, calculated value 945.11.
The synthesis of embodiment 2 compound 2
With 2-phenyl-2-((4-phenylnaphthalene-1-base) ethynyl)-1,3-dimercapto replaces 7-phenyl-5-((2-phenyl-1,3-dimercapto-2-base) ethynyl)-7H-benzo [c] carbazole, prepare by the synthetic method of compound 1 in embodiment 1.DEI-MS is used to identify this compound, molecular formula C
58h
38o
2, detected value [M+1]
+=767.56, calculated value 766.92.
The synthesis of embodiment 3 compound 3
With 2-([1,1'-xenyl]-4-base-ethynyl)-2-phenyl-1,3-dimercapto replaces 7-phenyl-5-((2-phenyl-1,3-dimercapto-2-base) ethynyl)-7H-benzo [c] carbazole, prepares by the synthetic method of compound 1 in embodiment 1.DEI-MS is used to identify this compound, molecular formula C
50h
34o
2, detected value [M+1]
+=667.93, calculated value 666.80.
The synthesis of embodiment 4 compound 4
With 2-((7,7-dimethyl-7H-benzo [c] fluorenes-5-base) ethynyl)-2-phenyl-1,3-dimercapto replaces 7-phenyl-5-((2-phenyl-1,3-dimercapto-2-base) ethynyl)-7H-benzo [c] carbazole, prepare by the synthetic method of compound 1 in embodiment 1.DEI-MS is used to identify this compound, molecular formula C
64h
46o
2, detected value [M+1]
+=847.69, calculated value 847.05.
The synthesis of embodiment 5 compound 5
With 7-phenyl-5-(2-(phenylene-ethynylene)-1,3-dimercapto-2-base)-7H-benzo [c] carbazole replacement 7-phenyl-5-((2-phenyl-1,3-dimercapto-2-base) ethynyl)-7H-benzo [c] carbazole, prepare by the synthetic method of compound 1 in embodiment 1.DEI-MS is used to identify this compound, molecular formula C
70h
44n
2o
2, detected value [M+1]
+=946.41, calculated value 945.11.
The synthesis of embodiment 6 compound 6
With 2-(7,7-dimethyl-7H-benzo [c] fluorenes-5-base)-2-(phenylene-ethynylene)-1,3-dimercapto replaces 7-phenyl-5-((2-phenyl-1,3-dimercapto-2-base) ethynyl)-7H-benzo [c] carbazole, prepare by the synthetic method of compound 1 in embodiment 1.DEI-MS is used to identify this compound, molecular formula C
64h
46o
2detected value [M+1]
+=847.82, calculated value 847.05.
The synthesis of embodiment 7 compound 7
With 2-([1,1'-xenyl]-4-base)-2-(this ethyl-acetylene base)-1,3-dimercapto replaces 7-phenyl-5-((2-phenyl-1,3-dimercapto-2-base) ethynyl)-7H-benzo [c] carbazole, prepare by the synthetic method of compound 1 in embodiment 1.DEI-MS is used to identify this compound, molecular formula C
50h
34o
2detected value [M+1]
+=667.31, calculated value 666.80.
The synthesis of embodiment 8 compound 8
With 2-(phenylene-ethynylene)-2-(4-phenylnaphthalene-1-base)-1,3-dimercapto replaces 7-phenyl-5-((2-phenyl-1,3-dimercapto-2-base) ethynyl)-7H-benzo [c] carbazole, prepare by the synthetic method of compound 1 in embodiment 1.DEI-MS is used to identify this compound, molecular formula C
58h
38o
2detected value [M+1]
+=767.84, calculated value 766.92.
Embodiment prepared by device
Describe below in conjunction with Fig. 1.Organic electroluminescence device comprises transparent substrate layer 1, anode layer 2, hole injection layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6, electron injecting layer 7 and cathode layer 8, and each Rotating fields presses the order arrangement of transparent substrate layer 1, anode layer 2, hole injection layer 3, hole transmission layer 4, luminescent layer 5, electron transfer layer 6, electron injecting layer 7 and cathode layer 8 from bottom to up.
Making such electro-luminescence display device can use all known or be expected to the material that develops future as the material forming each layer, and material is made film to be formed by methods such as vapour deposition method, spin-coating method or teeming practices by each layer.The thickness of each layer formed in this way is not particularly limited, and may correspond to the character of material and is suitable for setting, being generally 2nm ~ 5000nm.Moreover, the method for luminescent material thin-film is easily obtained uniform rete and not easily generates the experience of pin hole, preferred vapour deposition method.Evaporation condition is generally preferred at boat, Heating temperature 50 DEG C ~ 400 DEG C, vacuum tightness 10
-6pa ~ 10
-3pa, evaporation rate 0.01nm/s ~ 50nm/s, substrate temperature-150 DEG C ~ 300 DEG C, thickness 5nm ~ 5um.
Anode layer 2 has function hole being injected into hole transmission layer 4, and anode layer 2 is made up of following material usually: as metals such as aluminium, gold and silver, nickel, palladium or platinum; As metal oxides such as Indium sesquioxide, stannic oxide, zinc oxide, indium tin composite oxides, indium zinc composite oxides; As metal halides such as cupric iodides; Carbon black; Or partially conductive polymer etc.
Hole injection layer 3 can be used for promoting that holes from anode is injected into luminescent layer 5, and according to device architecture of the present invention, hole injection layer 3 can use material provided by the invention to be formed.
Hole transmission layer 3 is high-level efficiency from anode layer 2 injected hole and effectively can transmits the material of injected holes.Therefore, needing that the ionizing potential of this material is low, high to the perviousness of visible ray, hole mobility is high, stable in properties, also needing the light not easily produced when preparing or use to become the impurity of trap (trap).In addition owing to contacting with luminescent layer 5, hole transmission layer 4 is needed not make the light delustring of light emitting layer 5, and not and form exciplex between luminescent layer 5 and the common hole mobile material that lowers efficiency can enumerate with, N, N '-phenylbenzene-N, N '-(1-naphthyl)-1, the aromatic diamine containing plural tertiary amine that 1 '-biphenyl-4,4 '-diamines (NPB) is representative, triphen amine have the aromatic amine compounds, carbazoles derivative etc. of star radial configuration.
Luminescent layer 5 is formed by luminophore, wherein, between the electrode being applied with electric field, this luminophore because of hole and electronics combination again and excite, thus show strong luminescence.Usual luminescent layer 5 is containing as the doping type material of luminophore and substrate material.In order to obtain high-level efficiency electroluminescent device, the adoptable a kind of dopant material of its luminescent layer 5, or adopt multiple dopant material.Dopant material can be simple fluorescence or phosphor material, or is formed by different fluorescence and phosphorescence matched combined, and luminescent layer 5 can be single emitting layer material, also can for the recombination luminescence layer material be superimposed.
The material of main part of luminescent layer 5 not only needs to possess ambipolar transferring charge character, need appropriate energy rank simultaneously, excitation energy is delivered to guest emitting material effectively, and the material of this class can enumerate diphenylethyllene aryl derivatives, stibene derivative, carbazole derivative, triarylamine derivatives, anthracene derivant, pyrene derivatives, coronene derivative etc.
Relative to material of main part, the weight of mixing of guest materials is preferably 0.01%-20%.The material of this class can enumerate the metal complexes of iridium, nail, platinum, rhenium, palladium etc.
Form the material of the electron transfer layer 6 of above-mentioned electroluminescent device, can select to use arbitrarily by the electroluminescent material possessing electronic transport property, such material can be enumerated as 1,3, the benzimidazoles derivatives such as 5-tri-(1-naphthyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), three (oxine) aluminium (Alq
3) etc. metal complexes, 2-(4
,-trimethylphenylmethane base)-5-(4
,-xenyl)-1,3,4-oxadiazoles (oxadiazole derivative such as PBD) Deng, the phenanthroline derivatives such as 4,7-phenylbenzene-1,10-phenanthroline (BPhen), triazole derivative, quinoline, quinoxaline derivatives etc.
The optional work function of above-mentioned electroluminescent device spendable cathode layer 8 material is less than the metal of 4eV, alloy, conductive compound and their mixture.Its concrete example is aluminium, calcium, magnesium, lithium, magnesium alloy, aluminium alloy etc.In order to obtain electroluminescence efficiently, comparatively ideal is that the transmitance of at least one of electrode is set to more than 10%.Cathode layer 8 by dry method as vacuum evaporation, vapour deposition or sputtering formed.
Device embodiments and device comparative example
Below, describing compound provided by the present invention in detail by device embodiments 1-8 and comparative example 1 and 2 is material, prepares organic electroluminescence device provided by the invention and effect thereof.Wherein, device embodiments 1-8 using compound provided by the invention as the material of hole injection layer, and proves its beneficial effect with comparative example 1 and 2.
In addition, due to the method provided according to device embodiments 1, select compound provided by the invention to be the material of hole injection layer, can prepare, so summary.
Device embodiments 1
In conjunction with preparation method and the Figure of description of device, and compound provided by the invention is selected to be used as hole injection layer 3, its application and result in organic electroluminescence device hole injection layer 3 outstanding.
A) anode layer 2 on transparent substrate layer 1 is cleaned: clean each 15 minutes with deionized water, acetone, EtOH Sonicate respectively, then in plasma cleaner, process 2 minutes;
B) evaporation hole injection layer 3 on anode layer 2, compound 1 prepared by the embodiment of the present invention 1 is as the material of hole injection layer 3, and thickness is 30nm;
C) on hole injection layer 3, by vacuum evaporation mode evaporation TCTA, its thickness is 10nm, and this layer of organic materials uses as hole transmission layer 4.
D) on hole transmission layer 4 co-evaporation luminescent layer 5, CBP as material of main part, Ir (ppy)
3as phosphorescence dopant material, phosphor material doping ratio is 5% (phosphor material: material of main part=5wt%:95wt%), and thickness is 30nm;
E) on doping type luminescent layer compound, by vacuum evaporation mode evaporating Al q
3, thickness is 30nm, and this layer of organic materials uses as electron transfer layer 6;
F) on electron transfer layer 6, vacuum evaporation electron injecting layer LiF, thickness is 0.5nm, and this layer is electron injecting layer 7;
G) on electron injecting layer 7, vacuum evaporation negative electrode Al layer, thickness is 100nm, and this layer is cathode layer 8.
After completing electroluminescent device as above-mentioned, the driving voltage of measuring element, quantum yield, current efficiency, power efficiency and brightness, its result in Table 1.
Device embodiments 2
The difference of the present embodiment and device embodiments 1 is: the compound 2 that the hole injection layer of the organic electroluminescence device of preparation is prepared with the embodiment of the present invention 2 is for material.The result of the organic electroluminescence device made by device embodiments 2 in Table 1.
Device embodiments 3
The difference of the present embodiment and device embodiments 1 is: the compound 3 that the hole injection layer of the organic electroluminescence device of preparation is prepared with the embodiment of the present invention 3 is for material.The result of the organic electroluminescence device made by device embodiments 3 in Table 1.
Device embodiments 4
The difference of the present embodiment and device embodiments 1 is: the compound 4 that the hole injection layer of the organic electroluminescence device of preparation is prepared with the embodiment of the present invention 4 is for material.The result of the organic electroluminescence device made by device embodiments 4 in Table 1.
Device embodiments 5
The difference of the present embodiment device and device embodiments 1 is: the compound 5 that the hole injection layer of the organic electroluminescence device of preparation is prepared with the embodiment of the present invention 5 is for material.The result of the organic electroluminescence device made by device embodiments 5 in Table 1.
Device embodiments 6
The difference of the present embodiment device and device embodiments 1 is: the compound 6 that the hole injection layer of the organic electroluminescence device of preparation is prepared with the embodiment of the present invention 6 is for material.The result of the organic electroluminescence device made by device embodiments 6 in Table 1.
Device embodiments 7
The difference of the present embodiment device and device embodiments 1 is: the compound 7 that the hole injection layer of the organic electroluminescence device of preparation is prepared with the embodiment of the present invention 7 is for material.The result of the organic electroluminescence device made by device embodiments 7 in Table 1.
Device embodiments 8
The difference of the present embodiment and device embodiments 1 is: the compound 8 that the hole injection layer of the organic electroluminescence device of preparation is prepared with the embodiment of the present invention 8 is for material.The result of the electroluminescent device made by device embodiments 8 in Table 1.
Device comparative example 1
Device comparative example 1 and device embodiments 1 unlike: the hole injection layer of organic electroluminescence device is using HAT-CN as hole-injecting material.
Device comparative example 2
Device comparative example 2 and device embodiments 1 unlike: the organic electroluminescence device of preparation, does not form hole injection layer.
The result of the electroluminescent device made by device comparative example 1 and 2 in Table 1.
Table 1
Seen by table 1, photoelectric material of the present invention can be applicable to electroluminescent device and makes, and can obtain good performance.Device comparative example 1 uses existing conventional Hat-CN as hole-injecting material, and its driving voltage is significantly better than the device comparative example 2 without hole injection layer, and its driving voltage about reduces 16%; Material of the present invention uses as the hole-injecting material of electroluminescent device simultaneously, and its driving voltage is much better than device comparative example 1 and 2, and compared to device comparative example 2, the driving voltage of device embodiments 1 to 8 reduces 31%-38%;
In addition, compare with 2 with device comparative example 1, the quantum yield of device embodiments 1 to 8, current efficiency, power efficiency and brightness all obtain obvious improvement.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.