CN105141327B - Digital near field communication transmitter and implantation medical equipment - Google Patents
Digital near field communication transmitter and implantation medical equipment Download PDFInfo
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- CN105141327B CN105141327B CN201510445451.0A CN201510445451A CN105141327B CN 105141327 B CN105141327 B CN 105141327B CN 201510445451 A CN201510445451 A CN 201510445451A CN 105141327 B CN105141327 B CN 105141327B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The present invention relates to a kind of digital near field communication transmitter and implantation medical equipment.The emitter includes：Digital modulator and power amplifier；Digital modulator is used to modulate data to be sent to obtain digital radio signal and generate enable signal；Power amplifier is used to carry out digital radio signal when enable signal is low level power amplification generation differential radio frequency signals.Digital near field communication transmitter provided by the invention is simple in construction, low in energy consumption, can reduce the power of Medical Devices.
Description
Technical field
The present invention relates to intelligent medical instrument, more particularly to a kind of digital near field communication transmitter and implantable medical instrument
Device.
Background technology
Intelligent implantation medical equipment typically has bio-sensing and biology two class functions of excitation.Bio-sensing is to be used to examine
Survey biology character information, such as collection brain electric nerve signal；Biology excitation is to be used to adjust biology character, such as offsets heart flesh
Meat is irregular to tremble.In order to realize above-mentioned two classes function, implantation medical equipment generally includes external device and implantation human body
Inside equipment form.Wherein, external device provides wireless energy for in-vivo device and adjusts therapeutic state, including wireless confession
The parts such as energy, near-field communication and control unit；In-vivo device is used to realize that bio-sensing and biology encourage, including wireless capacitation,
The parts such as near-field communication, sensor, driver and control unit.
Communication distance is referred to as near-field communication when being less than ten times of carrier wavelength, different from far-field communication, electromagnetic field no longer with
Radiate and communication is realized in the form of coupling.For the body that in the near-field communication of implantation medical equipment, in-vivo device is gathered
Sign data (data to be sent) are real-time monitoring sign data and adjust the important evidence of therapeutic state according to this, therefore, how real
When efficiently data to be sent are sent to be in vitro be currently needed for solve technical problem.
In the prior art, it is most using load modulation system for implantation medical equipment, by changing people's in-vivo device
The middle size for obtaining coil and connecting load, changes the impedance variations of inducting that coil is energized in external device, so as to realize coil
The changes in amplitude of middle energy supply carrier wave, realizes uplink communication.This method realizes that circuit is relatively easy and can be easily integrated in implanted
In system.The uplink communication method of load modulation needs the coil of inside and outside to have larger and more stable coupled system, and
And need energy supply in vitro coil to generate larger load impedance change, (it is more than with the amplitude modulation(PAM) change for producing enough
2%) noise and interference are overcome, so as to realize external device and in-vivo device reliable communication.However, coil inside implanting
Size can not be too big so that it is little with the coupled system that energizes coil, and the coupling of internal coil can be made during physical activity
Coefficient is unstable, causes load impedance change to influence the stability of in-vivo device energy supply, while reduce the effect of wireless energy supply
Rate.Also technical literature is by setting multipair induction coil to realize that energy supply and uplink and downlink communication, the program can improve logical respectively
Letter circuit needs to dispose internal coil in human body with leading to energizing the influence of efficiency and obtaining wider telecommunications band
Believe coils special, improve the complexity of in-vivo device and the difficulty of implant surgery.
The content of the invention
The present invention one of purpose be to provide a kind of digital near field communication transmitter and implantation medical equipment,
It is bigger and be not suitable for the technology of near-field communication and ask using analog circuit power consumption to solve general emitter in the prior art
Topic.
For this purpose, the present invention proposes a kind of digital near field communication transmitter, including：Digital modulator and power are put
Big device, wherein,
The digital modulator is used to data to be sent being modulated to up-link carrier to obtain digital radio signal and generate
Enable signal；
The power amplifier is used to carry out power amplification to the digital radio signal when enable signal is low level
Produce differential radio frequency signals.
Alternatively, the power amplifier includes：Drive signal generating subunit and power gain subelement, the driving
The signal input part of signal generating subunit is connected with the signal output part of the digital modulator, and the drive signal produces
The signal output part of subelement is connected with the signal input part of the power gain subelement, the power gain subelement
Signal output part is connected with the signal input part of internal coil；
The drive signal generating subunit is used to produce drive signal according to enable signal and digital radio signal；
The power gain subelement is used to produce differential radio frequency signals according to the drive signal.
Alternatively, the drive signal generating subunit includes：OR gate, with the NOT gate of door and the first NOT gate~the 3rd, wherein,
The signal input part connection enable signal of first NOT gate, signal output part connection first signal with door
Input；
Described that radiofrequency signal is connected with the secondary signal input of door, signal output part connects the 3rd NOT gate；
The first input end connection enable signal of the OR gate, the second input connection signal output part with door,
Signal output part connects the signal input part of the second NOT gate.
Alternatively, the power gain subelement includes：The electric capacity of first resistor~second resistance, the first electric capacity~second,
The nmos pass transistor of the PMOS transistor of first PMOS transistor~second and the first nmos pass transistor~second, wherein,
The signal output part of the grid connection OR gate of first PMOS transistor, source electrode connection power supply, drain electrode connection institute
State the drain electrode of the first nmos pass transistor；
The grid connection of first nmos pass transistor and the signal output part of door, source electrode connect public terminal voltage；
The grid of second PMOS transistor connects the signal output part of the 3rd NOT gate, source electrode connection power supply, and drain electrode connects
Connect the drain electrode of second nmos pass transistor；
The grid of second nmos pass transistor connects the signal output part of the second NOT gate, and source electrode connects public terminal voltage；
The drain electrode of first PMOS transistor is connected described with the tie point of the drain electrode of first nmos pass transistor
The first end of one resistance, the second end of the first resistor connect the first end of first electric capacity；
The drain electrode of second PMOS transistor is connected described with the tie point of the drain electrode of second nmos pass transistor
The first end of two resistance, the second end of the second resistance connect the first end of second electric capacity；
Differential radio frequency signals are formed between second end of first electric capacity and the second end of second electric capacity.
Second aspect, the embodiment of the present invention additionally provide a kind of implantation medical equipment, utilize above-mentioned digital near field
Communication transmitter is made.
Digital near field communication transmitter provided in an embodiment of the present invention is simple in construction, the work when enable signal is low level
Make on off state, it is not necessary to DC bias current；When enable signal is high level, emitter does not work, power amplifier
Quiescent dissipation is zero, can reduce the power of Medical Devices.
Brief description of the drawings
The features and advantages of the present invention can be more clearly understood by reference to accompanying drawing, accompanying drawing is schematically without that should manage
Solve to carry out any restrictions to the present invention, in the accompanying drawings：
Fig. 1 is a kind of implantation medical equipment block diagram provided in an embodiment of the present invention；
Fig. 2 is the power amplifier circuit schematic diagram shown in Fig. 1；
Fig. 3 is the digital modulator processing procedure schematic diagram shown in Fig. 1.
Embodiment
With reference to the accompanying drawings and examples, the embodiment of the present invention is described in further detail.Implement below
Example is used to illustrate the present invention, but is not limited to the scope of the present invention.
Embodiment one
As shown in Figures 1 to 3, the embodiments of the invention provide a kind of digital near field communication transmitter, including：Digital modulation
Device 11 and power amplifier 12, wherein,
Digital modulator 11 is used to data to be sent being modulated to up-link carrier to obtain digital radio signal and generate to make
Can signal；
Power amplifier 12 is used to carry out power amplification to digital radio signal when enable signal is low level to produce
Differential radio frequency signals.
For implantation medical equipment, the factor of overriding concern is low invasive, low-power consumption and highly reliable during design.Now
Transmitter circuitry in technology is generally used for far-field communication, and the carrier frequency used is higher, it is necessary to be filtered comprising frequency mixer and shaping
The analog modules such as ripple device, circuit is complicated, power consumption is larger and is not applied for near-field communication.And it is applicable for near-field communication
RFID (Radio Frequency Identification, radio frequency identification) technology is realized up using load modulator approach
Communication, although transmitter circuitry is simple, can not ensure the stability of wireless energy supply and uplink communication, it is impossible to meet that intelligence is planted
Enter demand of the Medical Instruments to reliability.And digital near field communication transmitter provided in an embodiment of the present invention is simple in construction, when
Enable signal is operated on off state when being low level, it is not necessary to DC bias current；Launch when enable signal is high level
Machine does not work, and the quiescent dissipation of power amplifier is zero, can reduce the power of Medical Devices, and wireless energy supply leads to up
Believe reliable and stable.
Digital near field communication transmitter 10 forms implantation medical equipment with internal coil 20.Wherein, digital modulator
10 and the interface of internal coil 20 are WR (writing enabled), Payload (load) and Busy (busy indication).When internal coil 20 is wished
When sending upstream data, first check for whether Busy signals are high, represented if now Busy signals are high level digital near
Field communication transmitter 10 is in busy state, i.e., is sending previous frame data to be sent；If now Busy signals are low level
Then represent and export the load data for sending 10 bit wides to Payload, and WR signals are arranged to high level, the time is kept for one
Clock.As shown in figure 3, data adjuster 20 detects WR signals when being high level, it is high level to set Busy signals, is read simultaneously
Enter Payload load datas.First in the original position insertion synchronous head " 1110101110010 " of data to be sent, stop bits
Insertion even parity bit is put, so as to which data to be sent are formed into physical frame to be sent.Digital modulator by the physical frame to be sent from
Head is to tail using code check as 1953.125bps Serial output numerals BPSK (Binary Phase Shift Keying, binary phase
Keying) modulating unit.The physical frame to be sent is modulated to frequency as the logical of 62.5KHz by the BPSK modulating units in a manner of BPSK
Believe and digital radio signal RF is formed on carrier wave, while enable signal/EN of power amplifier is arranged to low level, when this is treated
When transmission physical frame is sent, then enable signal/EN is arranged to high level to close power amplifier, while Busy is believed
Number being arranged to low level, now digital transmitter 10 is now idle to inform internal coil 20.
Alternatively, as shown in Fig. 2 digital near field communication transmitter 10 provided in an embodiment of the present invention, power amplifier
12 include：Drive signal generating subunit 121 and power gain subelement 122.The signal of drive signal generating subunit 121 is defeated
Enter end with the signal output part of digital modulator 11 to be connected, the signal output part and power of drive signal generating subunit 121
The signal input part of gain subelement 122 is connected, the letter of the signal output part of power gain subelement 122 and internal coil 20
Number input is connected；
Drive signal generating subunit 121 is used to produce drive signal according to enable signal/EN and digital radio signal；
Power gain subelement 122 is used to produce differential radio frequency signals generation differential radio frequency signals according to drive signal.
Alternatively, as shown in Fig. 2 digital near field communication transmitter provided in an embodiment of the present invention is produced including drive signal
Raw subelement 121.The drive signal generating subunit 121 includes：It is first NOT gate 1211, non-with door 1212, OR gate 1213, second
The NOT gate 1215 of door 1214 and the 3rd, wherein,
Signal input part connection enable signal/EN of first NOT gate 1211, signal output part connection and the first of door 1212
Signal input part；
Digital radio signal is connected with the secondary signal input of door 1212, signal output part connects the 3rd NOT gate 1215；
The first input end connection enable signal of OR gate 1213, the connection of the second input and the signal output part of door 1212,
Signal output part connects the signal input part of the second NOT gate 1214.
Alternatively, as shown in Fig. 2 digital near field communication transmitter provided in an embodiment of the present invention also includes power gain
Subelement 122.The power gain subelement 122 includes：The electric capacity of first resistor R1~second resistance R2, the first electric capacity C1~second
The nmos pass transistor N2 of the PMOS transistor P2 and the first nmos pass transistor N1 of C2, the first PMOS transistor P1~second~second, its
In,
The signal output part of first PMOS transistor P1 grid connection OR gate 1213, source electrode connection power supply VCC, drain electrode connect
Connect the first nmos pass transistor N1 drain electrode；
First nmos pass transistor N1 grid connection and the signal output part of door 1212, source electrode connect public terminal voltage GND；
Second PMOS transistor P2 grid connects the signal output part of the 3rd NOT gate 1215, source electrode connection power supply VCC, leakage
Pole connects the second nmos pass transistor N2 drain electrode；
Second nmos pass transistor N2 grid connects the signal output part of the second NOT gate 1214, and source electrode connects public terminal voltage
GND；
First PMOS transistor P1 drain electrode is connected first resistor R1 with the tie point of the first nmos pass transistor N1 drain electrode
First end, first resistor R1 the second end connects the first electric capacity C1 first end；
Second PMOS transistor P2 drain electrode is connected second resistance R2 with the tie point of the second nmos pass transistor N2 drain electrode
First end, second resistance R2 the second end connects the second electric capacity C2 first end；
Differential radio frequency signals are formed between first electric capacity C1 the second end and the second electric capacity C2 the second end.
In practical application, public terminal voltage GND can be module ground, digitally or other can provide reference voltage
Signal.Those skilled in the art can be set according to situation, and the present invention is not construed as limiting.
As shown in Fig. 2 in the embodiment of the present invention, the PMOS transistor P2 and the first NMOS of the first PMOS transistor P1~second
Transistor N1~tetra- field-effect transistors of the second nmos pass transistor N2 are operated in saturation conduction or stopping state.When making
When energy signal/EN is high level, no matter digital radio signal RF level is high or low, the output signal of the first NOT gate 1211
For low level, the output signal with door 1212 is low level, and the output signal of OR gate 1213 is high level, the second NOT gate 1214
Output signal is low level, and the output signal of the 3rd NOT gate 1215 is high level.Because the first PMOS transistor P1 grid connects
Connect the output signal (being now high level) of OR gate 1213, the first PMOS transistor P1 stoppings；Due to the 2nd PMOS crystal
Pipe P2 grid connects the output signal (being now high level) of the 3rd NOT gate 1215, the second PMOS transistor P2 stoppings；
Grid connection and the signal output part (being now low level) of door 1212, the first NMOS crystal due to the first nmos pass transistor N1
Pipe N1 stoppings；Because the second nmos pass transistor N2 grid connects the signal output part of the second NOT gate 1214 (now to be low
Level), the second nmos pass transistor N2 stoppings.So four MOS transistors are turned off closing, ideally MOS crystal
Infinite when pipe turns off between source and drain, leakage current are very small (negligible).Therefore, when enable signal/EN is height
The power amplifier of digital near field communication transmitter does not work during level, and now the power consumption of power amplifier is almost nil.
When enable signal/EN is low level and digital radio signal RF is high level, the output of the first NOT gate 1211
Signal is high level, and the output signal with door 1212 is high level, and the output signal of OR gate 1213 is high level, the second NOT gate
1214 output signal is low level, and the output signal of the 3rd NOT gate 1215 is low level.First PMOS transistor P1 and second
Nmos pass transistor N2 stoppings, the second PMOS transistor P2 and the first nmos pass transistor N1 saturation conductions.So electric current is from electricity
Source VCC, the second PMOS transistor P2, second resistance R2, the second electric capacity C2, output end V-, output end V+, the first electric capacity C1,
One resistance R1, the first nmos pass transistor N1 reach public terminal voltage GND, negative so as to be formed between output end V+ and output end V-
The differential radio frequency signals of potential.Similarly, when enable signal/EN is low level and digital radio signal RF is low level, the
The output signal of one NOT gate 1211 is high level, and the output signal with door 1212 is low level, and the output signal of OR gate 1213 is
Low level, the output signal of the second NOT gate 1214 is high level, and the output signal of the 3rd NOT gate 1215 is high level.First PMOS
Transistor P1 and the second nmos pass transistor N2 saturation conductions, the second PMOS transistor P2 and the first nmos pass transistor N1 cut-offs are closed
Close, electric current is from power supply VCC, the first PMOS transistor P1, first resistor R1, the first electric capacity C1, output end V+, output end V-,
Two electric capacity C2, second resistance R2, the second nmos pass transistor N2 reach public terminal voltage GND, so as in output end V+ and output end
The differential radio frequency signals of positive potential are formed between V-.By said process, when enable signal/EN is low level, power amplifier
12 output signal is the difference radio-frequency signal with BPSK modulation intelligences identical with digital radio signal RF.
4 MOS transistors are only used only in the embodiment of the present invention and 5 logic units constitute digital near-field communication transmitting
The power amplifier of machine, simple in construction relative to analog circuit of the prior art, convenient design；And power amplifier
Amplifying device is field-effect transistor, is operated in saturation conduction or stopping state, unlike analogue amplifier needs direct current
Biasing or quiescent point, if ignoring the minimum leakage current of field-effect transistor, power amplifier provided in an embodiment of the present invention
Quiescent dissipation when not working is zero, therefore can reduce the power consumption of implantation medical equipment.In addition, in order to reduce implanted
Difficulty when Medical Instruments is to the invasive of human body and operation, it is necessary to reduce the volume size for being implanted into equipment, this hair as far as possible
Bright embodiment can be by adjusting first resistor R1 and second resistance R2 resistance, and the output impedance for improving emitter (is higher than 10K
Europe) so that the emitter can be multiplexed internal coil with wireless energy supply, therefore reduce in people's et al. Ke aerial coil
Number, reduce the invasive and operating difficulty of right human body.In prototype experiment, emitter power consumption is 0.6mW, to nothing
The influence of line energy supply efficiency is less than 14%, and the outer near field receiver of ligand realizes communication distance and is less than for the 70mm bit error rates
1.0E-7 reliable uplink communication, implantation medical equipment can be met to power consumption, the demand of communication distance and reliability.
Embodiment two
To embody the superiority of digital near field communication transmitter provided in an embodiment of the present invention, the embodiment of the present invention also carries
A kind of implantation medical equipment, including digital near field communication transmitter described above have been supplied, in addition to has been arranged in human body
Inside coil.Because the implantation medical equipment can be with digital near field communication transmitter described above based on same
Goal of the invention, solve same technical problem, reach same technique effect, the embodiment of the present invention no longer repeats one by one.
In the present invention, term " first ", " second ", " the 3rd " are only used for describing purpose, and it is not intended that instruction or
Imply relative importance.Term " multiple " refers to two or more, is limited unless otherwise clear and definite.
Although being described in conjunction with the accompanying embodiments of the present invention, those skilled in the art can not depart from this hair
Various modifications and variations are made in the case of bright spirit and scope, such modifications and variations are each fallen within by appended claims
Within limited range.
Claims (4)
- A kind of 1. digital near field communication transmitter, it is characterised in that including：Digital modulator and power amplifier, wherein,The digital modulator is used to modulate data to be sent to obtain digital radio signal and generate enable signal；The power amplifier is used to carry out power amplification generation to the digital radio signal when enable signal is low level Differential radio frequency signals；The power amplifier includes：Drive signal generating subunit and power gain subelement, the drive signal produce son The signal input part of unit is connected with the signal output part of the digital modulator, the letter of the drive signal generating subunit Number output end is connected with the signal input part of the power gain subelement, the signal output part of the power gain subelement It is connected with the signal input part of internal coil；The drive signal generating subunit is used to produce drive signal according to enable signal and digital radio signal；The power gain subelement is used to produce differential radio frequency signals according to the drive signal.
- 2. digital near field communication transmitter according to claim 1, it is characterised in that it is single that the drive signal produces son Member includes：OR gate, with the NOT gate of door and the first NOT gate~the 3rd, wherein,The signal input part connection enable signal of first NOT gate, signal output part connection is described to be inputted with the first signal of door End；Described that radiofrequency signal is connected with the secondary signal input of door, signal output part connects the 3rd NOT gate；The first input end connection enable signal of the OR gate, the second input connection signal output part with door, signal Output end connects the signal input part of the second NOT gate.
- 3. digital near field communication transmitter according to claim 1, it is characterised in that the power gain subelement bag Include：The PMOS transistor of the electric capacity of first resistor~second resistance, the first electric capacity~second, the first PMOS transistor~second and first The nmos pass transistor of nmos pass transistor~second, wherein,The signal output part of the grid connection OR gate of first PMOS transistor, source electrode connection power supply, drain electrode connection described the The drain electrode of one nmos pass transistor；The grid connection of first nmos pass transistor and the signal output part of door, source electrode connect public terminal voltage；The grid of second PMOS transistor connects the signal output part of the 3rd NOT gate, source electrode connection power supply, drain electrode connection institute State the drain electrode of the second nmos pass transistor；The grid of second nmos pass transistor connects the signal output part of the second NOT gate, and source electrode connects public terminal voltage；The drain electrode of first PMOS transistor is connected first electricity with the tie point of the drain electrode of first nmos pass transistor The first end of resistance, the second end of the first resistor connect the first end of first electric capacity；The drain electrode of second PMOS transistor is connected second electricity with the tie point of the drain electrode of second nmos pass transistor The first end of resistance, the second end of the second resistance connect the first end of second electric capacity；Differential radio frequency signals are formed between second end of first electric capacity and the second end of second electric capacity.
- 4. a kind of implantation medical equipment, it is characterised in that utilize the digital near field described in any one of claims 1 to 33 Communication transmitter is made.
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| CN201510445451.0A CN105141327B (en) | 2015-07-27 | 2015-07-27 | Digital near field communication transmitter and implantation medical equipment |
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| CN201510445451.0A CN105141327B (en) | 2015-07-27 | 2015-07-27 | Digital near field communication transmitter and implantation medical equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506900A (en) * | 2002-12-10 | 2004-06-23 | 伟 陈 | Electronic shelf label system and its electronic label |
| CN1820800A (en) * | 2006-01-06 | 2006-08-23 | 清华大学 | Two-way radio communication device for implanting type medical instrument |
| CN101651369A (en) * | 2009-09-09 | 2010-02-17 | 重庆大学 | Wireless energy supply and wireless acquisition system of nerve tract implanted electrode based on vlsivery large scale integrated circuit |
| CN102170296A (en) * | 2011-04-22 | 2011-08-31 | 北京大学 | A radio frequency front-end circuit structure |
| CN202524172U (en) * | 2012-02-09 | 2012-11-07 | 邹磊 | Implantable wireless power receiving and transmitting signal circuit |
| CN102832927A (en) * | 2012-08-31 | 2012-12-19 | 华南理工大学 | Implanted AM (Amplitude Modulation) transmission method and system suitable for being implemented by CMOS (Complementary Metal Oxide Semiconductor) process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104168042B (en) * | 2014-01-20 | 2016-05-04 | 中国海洋大学 | Human body implantation type communication means and system based on inductance coupling high |
-
2015
- 2015-07-27 CN CN201510445451.0A patent/CN105141327B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506900A (en) * | 2002-12-10 | 2004-06-23 | 伟 陈 | Electronic shelf label system and its electronic label |
| CN1820800A (en) * | 2006-01-06 | 2006-08-23 | 清华大学 | Two-way radio communication device for implanting type medical instrument |
| CN101651369A (en) * | 2009-09-09 | 2010-02-17 | 重庆大学 | Wireless energy supply and wireless acquisition system of nerve tract implanted electrode based on vlsivery large scale integrated circuit |
| CN102170296A (en) * | 2011-04-22 | 2011-08-31 | 北京大学 | A radio frequency front-end circuit structure |
| CN202524172U (en) * | 2012-02-09 | 2012-11-07 | 邹磊 | Implantable wireless power receiving and transmitting signal circuit |
| CN102832927A (en) * | 2012-08-31 | 2012-12-19 | 华南理工大学 | Implanted AM (Amplitude Modulation) transmission method and system suitable for being implemented by CMOS (Complementary Metal Oxide Semiconductor) process |
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