CN105140093A - Ion implantation machine with double ion sources - Google Patents
Ion implantation machine with double ion sources Download PDFInfo
- Publication number
- CN105140093A CN105140093A CN201510374130.6A CN201510374130A CN105140093A CN 105140093 A CN105140093 A CN 105140093A CN 201510374130 A CN201510374130 A CN 201510374130A CN 105140093 A CN105140093 A CN 105140093A
- Authority
- CN
- China
- Prior art keywords
- filament
- feeding unit
- ion
- sidewall
- voltage feeding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention relates to an ion implantation machine with double ion sources. The ion implantation machine comprises an arc starting chamber, a first filament, a first reflector, a second filament, a second reflector, a slit, a source gas inlet and a cleaning gas inlet, wherein the first filament is arranged at the first sidewall, the two ends of the first filament are connected with electrodes, the first reflector is arranged at the second sidewall, and connected with the cathode of a third voltage supply unit, the anode of the third voltage supply unit is connected with the sidewall, the second filament is arranged at the third sidewall, the two ends of the second filament are connected with electrodes, the second reflector is arranged at the fourth sidewall, and connected with the cathode of a fourth voltage supply unit, and the anode of the fourth voltage supply unit is connected with the sidewall. The first filament and the second filament which can be electrically connected with a thermion power supply in a switchable manner and the first reflector and the second reflector which can be electrically connected with an electric field power source in the switchable manner are arranged, so that the period of ion source cleaning and replacement is reduced, the maintenance frequency is reduced, the service life and online time of the ion implantation machine are both prolonged, and the production power of the machine is improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of ion implantor with dual ion sources.
Background technology
Ion implantation is a kind of technology be optionally injected into by impurity material in semiconductor technology in semi-conducting material.Impurity material is ionized in ionization chamber, these ions is accelerated to form the ion beam with setting energy, ion beam bombardment crystal column surface, and enters in wafer, arrive the depth relevant to energy.
The impurity material of gas or solid is converted into plasma by ion implantor usually in starting the arc chamber, then plasma is drawn from starting the arc chamber, form ion beam, this ion beam can be carried out quality analysis optionally to accelerate to the energy of expection, and guides to crystal column surface.
But existing ion implantor all only has an independent ion source, and adaptive magnetic deflection field analyzer is set at described ion source outlet place.When the ion source life limit reaches, need to carry out maintaining to ion source, and ion implantor now will process stopped status.Visible, ionogenic maintaining is the key factor affecting the ion implantor online production time.
Seek a kind of maintaining convenience, structure is simple, and the ion injection machine table that can extend ionogenic useful life becomes one of those skilled in the art's technical problem urgently to be resolved hurrily.
Therefore for prior art Problems existing, this case designer is by means of being engaged in the industry experience for many years, and active research improves, so there has been a kind of ion implantor with dual ion sources of the present invention.
Summary of the invention
The present invention be directed in prior art, existing ion implantor all only has an independent ion source, when the ion source life limit reaches, need to carry out maintaining to ion source, the frequency is too high, and affecting the defects such as ion implantor online production time provides a kind of ion implantor with dual ion sources.
For realizing the object of the present invention, the invention provides a kind of ion implantor with dual ion sources, described in there is the ion implantor of dual ion sources, comprising: starting the arc chamber, for accommodating plasma; First filament, is arranged on the first side wall of described starting the arc chamber, and at the two ends connecting electrode of described first filament; First repellel, what be arranged on described starting the arc chamber is towards on the second sidewall arranged with described the first side wall, described first repellel is connected with the negative pole of tertiary voltage feeding unit, and the positive pole of described tertiary voltage feeding unit is connected with the sidewall of described starting the arc chamber; Second filament, is arranged on the 3rd sidewall differing from described the first side wall and described second sidewall of described starting the arc chamber, and at the two ends connecting electrode of described second filament; Second repellel, what be arranged on described starting the arc chamber is towards on the 4th sidewall arranged with described 3rd sidewall, described second repellel is connected with the negative pole of the 4th voltage feeding unit, and the positive pole of described 4th voltage feeding unit is connected with the sidewall of described starting the arc chamber; Slit is the outlet of described plasma; Source gas passes into mouth, for passing into ion source gas; Clean air passes into mouth, for passing into inert clear gas.
Alternatively, the positive voltage scope that the positive pole of described tertiary voltage feeding unit applies is 50 ~ 200 volts, and the voltage that negative pole applies is-5 ~-10 volts.
Alternatively, the positive voltage scope that the positive pole of described 4th voltage feeding unit applies is 50 ~ 200 volts, and the voltage that negative pole applies is-5 ~-10 volts.
Alternatively, described first filament is electrically connected with the first voltage feeding unit, and described second filament is electrically connected with the second voltage feeding unit.
Alternatively, the described first voltage feeding unit of described first filament electrical connection is connected described tertiary voltage feeding unit with described first reflector potential and uses simultaneously, is the first ion source; The described second voltage feeding unit of described second filament electrical connection is connected described 4th voltage feeding unit and uses simultaneously with described second reflector potential, be the second ion source.
Alternatively, when the second voltage feeding unit that the first voltage feeding unit that described first filament connects is connected with described second filament is same hot electron power supply source, described hot electron power supply source carries out electrode switching when described first filament or described second filament are used alone.
Alternatively, when connecting described first repellel and being same electric field power supply source with the tertiary voltage feeding unit of the sidewall of described starting the arc chamber with the 4th voltage feeding unit of the sidewall being connected described second repellel and described starting the arc chamber, described electric field power supply source carries out electrode switching when described first repellel and described second repellel are used alone.
Alternatively, described first repellel and described second reflects one of them material preparation of very tantalum, molybdenum, niobium, zirconium, tungsten ytterbium alloy, tungsten zirconium alloy.
In sum, the ion implantor that the present invention has a dual ion sources can carry out switching with hot electron power supply source described first filament and described second filament that are electrically connected by arranging, and carry out switching with electric field power supply source described first repellel and described second emitter that are electrically connected, the cycle not only reduce ion source cleaning, changing, reduce and safeguard frequency, and extend the useful life of the ion implantor with dual ion sources and produce line duration, improve the production capacity of board.
Accompanying drawing explanation
Figure 1 shows that the present invention has the structural representation of the ion implantor of dual ion sources.
Embodiment
By describe in detail the invention technology contents, structural feature, reached object and effect, coordinate accompanying drawing to be described in detail below in conjunction with embodiment.
Refer to Fig. 1, Figure 1 shows that the present invention has the structural representation of the ion implantor of dual ion sources.The described ion implantor 1 with dual ion sources, comprising: starting the arc chamber 11, and described starting the arc chamber 11 is for accommodating plasma; First filament 12, described first filament 12 is arranged on the first side wall 111 of described starting the arc chamber 11, and at the two ends connecting electrode (not shown) of described first filament 12, for generation of hot electron, make the source gas ions passed in described starting the arc chamber 11 turn to plasma; First repellel 13, what described first repellel 13 was arranged on described starting the arc chamber 11 is towards on the second sidewall 112 arranged with described the first side wall 111, for reflecting the hot electron that described first filament 12 produces; Second filament 14, described second filament 14 is arranged on the 3rd sidewall 113 differing from described the first side wall 111 and described second sidewall 112 of described starting the arc chamber 11, and at the two ends connecting electrode (not shown) of described second filament 14, for generation of hot electron, the source gas ions passed in described starting the arc chamber 11 is made to turn to plasma; Second repellel 15, what described second repellel 15 was arranged on described starting the arc chamber 11 is towards on the 4th sidewall 114 arranged with described 3rd sidewall 113, for reflecting the hot electron that described second filament 14 produces; Slit (not shown), described slit is the outlet of described plasma; Source gas passes into mouth (not shown), and described source gas passes into mouth for passing into ion source gas; Clean air passes into mouth (not shown), and described clean air passes into mouth for passing into inert clear gas.
Please continue to refer to Fig. 1, described first filament 12 is electrically connected with the first voltage feeding unit 16, described first voltage feeding unit 16 is for applying voltage to described first filament 12, make in described first filament 12 by enough electric currents, and form the high temperature of several thousand degree, and then launch hot electron from described first filament 12.Described second filament 14 is electrically connected with the second voltage feeding unit 17, described second voltage feeding unit 17 is for applying voltage to described second filament 14, make in described second filament 14 by enough electric currents, and form the high temperature of several thousand degree, and then launch hot electron from described second filament 14.
As those skilled in the art, easy understand ground, the the first voltage feeding unit 16 be connected with described first filament 12 and the second voltage feeding unit 17 be connected with described second filament 14 can be same hot electron power supply source, and described hot electron power supply source carries out electrode switching when described first filament 12 or described second filament 14 are used alone.
Please continue to refer to Fig. 1, the described ion implantor 1 with dual ion sources, comprise further: tertiary voltage feeding unit 18, the positive pole of described tertiary voltage feeding unit 18 is connected with the sidewall of described starting the arc chamber 11, for providing accelerating field, the hot electron that described first filament 12 is occurred has enough energy, clashes into the ion source gas passing into starting the arc chamber 11, makes source gas ions turn to plasma; 4th voltage feeding unit 19, the positive pole of described 4th voltage feeding unit 19 is connected with the sidewall of described starting the arc chamber 11, for providing accelerating field, the hot electron that described second filament 14 is occurred has enough energy, clash into the ion source gas passing into starting the arc chamber 11, make source gas ions turn to plasma.
In order to make described hot electron obtain enough energy, the positive voltage scope that the positive pole of described tertiary voltage feeding unit 18 applies is 50 ~ 200 volts.The negative pole of described tertiary voltage feeding unit 18 is connected with described first repellel 13, the voltage that described negative pole applies is-5 ~-10 volts, the hot electron reflection that described first filament 12 is launched returns starting the arc chamber 11, prevents hot electron excessive by starting the arc chamber 11.Similarly, the positive voltage scope that the positive pole of described 4th voltage feeding unit 19 applies is 50 ~ 200 volts.The negative pole of described 4th voltage feeding unit 19 is connected with described second repellel 15, the voltage that described negative pole applies is-5 ~-10 volts, the hot electron reflection that described second filament 14 is launched returns starting the arc chamber 11, prevents hot electron excessive by starting the arc chamber 11.
As those skilled in the art, easy understand ground, connect described first repellel 13 and can be same electric field power supply source with the tertiary voltage feeding unit 18 of the sidewall of described starting the arc chamber 11 with the 4th voltage feeding unit 19 of the sidewall being connected described second repellel 15 and described starting the arc chamber 11, described electric field power supply source carries out electrode switching when described first repellel 13 and described second repellel 15 are used alone.More specifically, described first repellel 13 and described second repellel 15 are one of them material preparation of tantalum, molybdenum, niobium, zirconium, tungsten ytterbium alloy, tungsten zirconium alloy.
Described clean air passes into mouth for passing into inert clear gas, it is the first plasma that inert clear gas can be ionized, first plasma is sluggish chemical characteristic under having stronger stability and hot environment, the second plasma after the first plasma can not dissociate with ion source gas and accessory substance or particle generation chemical reaction.More specifically, described inert clear gas is argon gas or helium.
In order to disclose the technical scheme of the present invention more intuitively, highlight the beneficial effect of the present invention, the operation principle now the present invention in conjunction with embodiment to the ion implantor of dual ion sources is set forth.In a specific embodiment, the described first voltage feeding unit 16 be electrically connected with described first filament 12 and the described tertiary voltage feeding unit 18 be electrically connected with described first repellel 13 use simultaneously, have the first ion source of the ion implantor 1 of dual ion sources as the present invention; The described second voltage feeding unit 17 be electrically connected with described second filament 14 and the described 4th voltage feeding unit 19 be electrically connected with described second repellel 15 use simultaneously, have the second ion source of the ion implantor 1 of dual ion sources as the present invention.
When the first voltage feeding unit 16 be connected with described first filament 12 and the second voltage feeding unit 17 of being connected with described second filament 14 are for same hot electron power supply source, described hot electron power supply source carries out electrode switching when described first filament 12 or described second filament 14 are used alone; When connecting described first repellel 13 and being same electric field power supply source with the tertiary voltage feeding unit 18 of the sidewall of described starting the arc chamber 11 with the 4th voltage feeding unit 19 of the sidewall being connected described second repellel 15 and described starting the arc chamber 11, described electric field power supply source carries out electrode switching when described first repellel 13 and described second repellel 15 are used alone.
The ion implantor 1 with dual ion sources of the present invention is when carrying out ion implantation technology, without limitation, such as first enter work with described first ion source, namely described first filament 12 is electrically connected described hot electron power supply source, described first repellel 13 is electrically connected described electric field power supply source and carries out technical process, when described first filament 12 life cycle terminates, then switched by the electrode of described hot electron power supply source and described electromagnetism power supply source, realize described second ion source and enter work, namely described second filament 14 is electrically connected described hot electron power supply source, described second repellel 15 is electrically connected described electric field power supply source and carries out technical process.
Significantly, the ion implantor 1 that the present invention has a dual ion sources can carry out switching with hot electron power supply source described first filament 12 and described second filament 14 that are electrically connected by arranging, and carry out switching described first repellel 13 and described second be electrically connected with electric field power supply source and launch emitter 15, the cycle not only reduce ion source cleaning, changing, reduce and safeguard frequency, and extend the useful life of the ion implantor with dual ion sources and produce line duration, improve the production capacity of board.
In sum, the ion implantor 1 that the present invention has a dual ion sources can carry out switching with hot electron power supply source described first filament 12 and described second filament 14 that are electrically connected by arranging, and carry out switching with electric field power supply source described first repellel 13 and described second emitter 15 that are electrically connected, the cycle not only reduce ion source cleaning, changing, reduce and safeguard frequency, and extend the useful life of the ion implantor with dual ion sources and produce line duration, improve the production capacity of board.
Those skilled in the art all should be appreciated that, without departing from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thus, if when any amendment or modification fall in the protection range of appended claims and equivalent, think that these amendment and modification are contained in the present invention.
Claims (8)
1. there is an ion implantor for dual ion sources, it is characterized in that, described in there is the ion implantor of dual ion sources, comprising:
Starting the arc chamber, for accommodating plasma;
First filament, is arranged on the first side wall of described starting the arc chamber, and at the two ends connecting electrode of described first filament;
First repellel, what be arranged on described starting the arc chamber is towards on the second sidewall arranged with described the first side wall, described first repellel is connected with the negative pole of tertiary voltage feeding unit, and the positive pole of described tertiary voltage feeding unit is connected with the sidewall of described starting the arc chamber;
Second filament, is arranged on the 3rd sidewall differing from described the first side wall and described second sidewall of described starting the arc chamber, and at the two ends connecting electrode of described second filament;
Second repellel, what be arranged on described starting the arc chamber is towards on the 4th sidewall arranged with described 3rd sidewall, described second repellel is connected with the negative pole of the 4th voltage feeding unit, and the positive pole of described 4th voltage feeding unit is connected with the sidewall of described starting the arc chamber;
Slit is the outlet of described plasma;
Source gas passes into mouth, for passing into ion source gas;
Clean air passes into mouth, for passing into inert clear gas.
2. have the ion implantor of dual ion sources as claimed in claim 1, it is characterized in that, the positive voltage scope that the positive pole of described tertiary voltage feeding unit applies is 50 ~ 200 volts, and the voltage that negative pole applies is-5 ~-10 volts.
3. have the ion implantor of dual ion sources as claimed in claim 1, it is characterized in that, the positive voltage scope that the positive pole of described 4th voltage feeding unit applies is 50 ~ 200 volts, and the voltage that negative pole applies is-5 ~-10 volts.
4. have the ion implantor of dual ion sources as claimed in claim 1, it is characterized in that, described first filament is electrically connected with the first voltage feeding unit, and described second filament is electrically connected with the second voltage feeding unit.
5. have the ion implantor of dual ion sources as claimed in claim 4, it is characterized in that, the described first voltage feeding unit of described first filament electrical connection is connected described tertiary voltage feeding unit with described first reflector potential and uses simultaneously, is the first ion source; The described second voltage feeding unit of described second filament electrical connection is connected described 4th voltage feeding unit and uses simultaneously with described second reflector potential, be the second ion source.
6. there is the ion implantor of dual ion sources as claimed in claim 5, it is characterized in that, when the second voltage feeding unit that the first voltage feeding unit that described first filament connects is connected with described second filament is same hot electron power supply source, described hot electron power supply source carries out electrode switching when described first filament or described second filament are used alone.
7. there is the ion implantor of dual ion sources as claimed in claim 5, it is characterized in that, when connecting described first repellel and being same electric field power supply source with the tertiary voltage feeding unit of the sidewall of described starting the arc chamber with the 4th voltage feeding unit of the sidewall being connected described second repellel and described starting the arc chamber, described electric field power supply source carries out electrode switching when described first repellel and described second repellel are used alone.
8. have the ion implantor of dual ion sources as claimed in claim 1, it is characterized in that, described first repellel and described second reflects one of them material preparation of very tantalum, molybdenum, niobium, zirconium, tungsten ytterbium alloy, tungsten zirconium alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510374130.6A CN105140093A (en) | 2015-06-30 | 2015-06-30 | Ion implantation machine with double ion sources |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510374130.6A CN105140093A (en) | 2015-06-30 | 2015-06-30 | Ion implantation machine with double ion sources |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105140093A true CN105140093A (en) | 2015-12-09 |
Family
ID=54725402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510374130.6A Pending CN105140093A (en) | 2015-06-30 | 2015-06-30 | Ion implantation machine with double ion sources |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105140093A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933507A (en) * | 2020-08-18 | 2020-11-13 | 泉芯集成电路制造(济南)有限公司 | Ion source structure with double filaments and control method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040144932A1 (en) * | 2001-12-03 | 2004-07-29 | Adrian Murrell | Ion sources for ion implantation apparatus |
| CN203325833U (en) * | 2013-06-03 | 2013-12-04 | 上海华力微电子有限公司 | Ion implanter with dual ion sources |
| CN103887132A (en) * | 2012-12-20 | 2014-06-25 | 中芯国际集成电路制造(上海)有限公司 | Ion source of injection device and ion injection method |
-
2015
- 2015-06-30 CN CN201510374130.6A patent/CN105140093A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040144932A1 (en) * | 2001-12-03 | 2004-07-29 | Adrian Murrell | Ion sources for ion implantation apparatus |
| CN103887132A (en) * | 2012-12-20 | 2014-06-25 | 中芯国际集成电路制造(上海)有限公司 | Ion source of injection device and ion injection method |
| CN203325833U (en) * | 2013-06-03 | 2013-12-04 | 上海华力微电子有限公司 | Ion implanter with dual ion sources |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933507A (en) * | 2020-08-18 | 2020-11-13 | 泉芯集成电路制造(济南)有限公司 | Ion source structure with double filaments and control method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9530615B2 (en) | Techniques for improving the performance and extending the lifetime of an ion source | |
| US8702920B2 (en) | Repeller structure and ion source | |
| TWI518733B (en) | An ion source, ion implantation system and method of generating multiply charged ions in ion source | |
| KR20110039247A (en) | Techniques for providing a multimode ion source | |
| JP2015524606A5 (en) | Ion source and method for cleaning an ion source | |
| US11232925B2 (en) | System and method for improved beam current from an ion source | |
| KR20170045397A (en) | Ion bombardment device and method for using the same to clean substrate surface | |
| Nikolaev et al. | Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow | |
| KR20210128009A (en) | Indirectly heated cathode ion source and method of operating the same | |
| US9824846B2 (en) | Dual material repeller | |
| CN111681936B (en) | Tip field negative hydrogen ion source device for high-energy ion implanter | |
| CN105140093A (en) | Ion implantation machine with double ion sources | |
| CN109192641A (en) | A kind of penning cold-cathode source | |
| US11120966B2 (en) | System and method for improved beam current from an ion source | |
| CN204497191U (en) | A kind of Kaufman power supply with anti-static coating | |
| CN105448630A (en) | Ion source for generating aluminum ion beam | |
| CN106498360B (en) | Ion forms container and ion source | |
| CN104480447A (en) | Multifunctional ion source | |
| CN109300757A (en) | Microwave ECR plasma cathode annular beam electron gun and 3D printing method | |
| US11600473B2 (en) | Ion source with biased extraction plate | |
| JP5625965B2 (en) | X-ray tube | |
| Smirnov et al. | Plasma spraying metal-porous cathodes for high-power microwave devices | |
| JP2018018609A (en) | Plasma processing device | |
| EP2838323A1 (en) | Plasma generation device, vapor deposition device, and plasma generation method | |
| WO2023091267A1 (en) | Shield for filament in an ion source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151209 |
|
| RJ01 | Rejection of invention patent application after publication |