CN105119511B - A kind of MMC submodular circuits with DC side failure blocking ability - Google Patents
A kind of MMC submodular circuits with DC side failure blocking ability Download PDFInfo
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Abstract
A kind of MMC submodular circuits with DC side failure blocking ability.It is related to protecting electrical power system control field.Can fully locking short circuit current, simple in construction, required device is few, integrated level is high.Power switch pipe one and diode including two half-bridge submodules, with anti-parallel diodes.Half-bridge submodule one is connected with the emitter stage of the power switch pipe one with anti-parallel diodes, and another is connected with the colelctor electrode of the power switch pipe one with anti-parallel diodes.The negative pole of diode with and with the power switch pipe two with anti-parallel diodes in the half-bridge submodule that is connected of emitter stage of the power switch pipe one of anti-parallel diodes colelctor electrode connection, positive pole is connected with the emitter stage of the power switch pipe three with anti-parallel diodes in another half-bridge submodule.Small product size is small, and stability is high；Topological structure is simple, and cost is low, easily realizes；Configuration is flexible, reduces power consumption；When can disconnect DC side, response is rapid.
Description
Technical field
The present invention relates to protecting electrical power system control field, more particularly to it is a kind of with DC side failure blocking ability
MMC submodular circuits.
Background technology
Electric energy quality synthesis compensation apparatus output-voltage levels number of the tradition using three-phase half-bridge as main circuit is restricted simultaneously
And it is limited to the compensation ability of negative-sequence current, cause its final compensation result can not reach required effect, and its
Switching frequency is higher, loss is big.Sometimes for improving system pressure-resistant, it is necessary to multiple switch devices in series partial pressure, but this can band
The problems such as carrying out switching device action consistency and pressing.
Application for a patent for invention (the application number that State Intellectual Property Office 2015-5-13 is announced：201410848005X names
Claim：With DC Line Fault current limiting capacity MMC transverters improved structure and partition method) one kind is disclosed with DC Line Fault current limliting
The MMC transverters of ability, including current limliting module, gate-controlled switch, resistance and dc circuit breaker.When DC side breaks down, lead to
Quick, comprehensive failure current limit is crossed, reduces the requirement of the responsiveness and excision capacity to dc circuit breaker.Have a disadvantage in that
Required device is various, and pressure voltage is low, and dc circuit breaker reaction time length, operating frequency is high, big to device loss.It is short in DC side
Lu Shi, due to diode afterflow act on, cause DC side can not in time complete locking short circuit current, it is necessary to breaker cooperation
Realize that direct current lateral circuit disconnects.
The content of the invention
The present invention be directed to problem above, there is provided a kind of DC side can in time, fully locking short circuit current, and structure
Simply, the MMC submodular circuits with DC side failure blocking ability that required device is few, integrated level is high.
The technical scheme is that：
Power switch pipe one and diode including two half-bridge submodules, with anti-parallel diodes, half-bridge submodule
Power switch pipe three and electric capacity of voltage regulation including the power switch pipe two with anti-parallel diodes, with anti-parallel diodes,
Power switch pipe two with anti-parallel diodes is connected in series with the power switch pipe three with anti-parallel diodes, voltage stabilizing electricity
The positive terminal of appearance is connected with the colelctor electrode of the power switch pipe two with anti-parallel diodes, negative pole end with reverse parallel connection
The power switch pipe three of diode emitter stage connection, the emitter stage of the power switch pipe two with anti-parallel diodes with anti-
To being submodule end of incoming cables between the colelctor electrode of the power switch pipe three of parallel diode；The negative pole end of electric capacity of voltage regulation is submodule
Leading-out terminal, it is characterised in that the half-bridge submodule one of them with the power switch pipe one with anti-parallel diodes
Emitter stage connection, another is connected with the colelctor electrode of the power switch pipe one with anti-parallel diodes；
The negative pole of the diode with and with the power switch pipe one of anti-parallel diodes the half-bridge that is connected of emitter stage
The colelctor electrode of the power switch pipe two with anti-parallel diodes in submodule connects, in positive pole and another half-bridge submodule
The power switch pipe three with anti-parallel diodes emitter stage connection.
Including end of incoming cables and leading-out terminal；
The end of incoming cables with and with the power switch pipe one of anti-parallel diodes the half-bridge submodule that is connected of emitter stage
Submodule end of incoming cables it is identical, leading-out terminal with and with the power switch pipe one of anti-parallel diodes the half-bridge that is connected of colelctor electrode
The submodule leading-out terminal of submodule is identical.
Also include N number of half-bridge submodule for increase-volume.
During N=1, for increase-volume the half-bridge submodule submodule end of incoming cables with and work(with anti-parallel diodes
The submodule end of incoming cables of the half-bridge submodule of the colelctor electrode connection of rate switching tube one is connected；
Negative pole end for electric capacity of voltage regulation in the half-bridge submodule of increase-volume is new leading-out terminal.
During N=2, the end of incoming cables of the half-bridge submodule for increase-volume and the previous half-bridge submodule for increase-volume are increased newly
The leading-out terminal of block is connected；
The negative pole end of electric capacity of voltage regulation is new leading-out terminal in the increase-volume module newly increased.
The electric capacity of voltage regulation is electrochemical capacitor.
The present invention is using power switch pipe as switching device, and integrated level is high, and small product size is small, and stability is high；Avoid making
With dc circuit breaker, the problem of dc circuit breaker loss is big is evaded；Required device is few, and topological structure is simple, and control algolithm is difficult
Degree reduces；Required device is few, and cost is low, easily realizes；Using modularization making, can be reduced according to flexible configuration is actually needed
Power consumption；Configuring direct current breaker is not needed just to disconnect DC side in fault, response is rapid, disconnects DC side, enters
Row Fault Isolation.
Brief description of the drawings
Fig. 1 is the circuit diagram of the present invention,
Fig. 2 is the circuit diagram of half-bridge submodule,
Circuit diagram of the present invention when Fig. 3 is N=1,
Circuit diagram of the present invention when Fig. 4 is N=2,
Fig. 5 is the simulation waveform of the present invention,
Fig. 6 is the circulation path schematic diagram that the sense of current is timing electric current,
Fig. 7 is the circulation path schematic diagram of electric current when the sense of current is negative,
Fig. 8 is the structural representation of the power switch pipe with anti-parallel diodes；
1 is the power switch pipe one with anti-parallel diodes in figure,
2 be diode,
3 be half-bridge submodule,
4 be end of incoming cables,
5 be leading-out terminal,
301 be the power switch pipe two with anti-parallel diodes,
302 be the power switch pipe three with anti-parallel diodes,
303 be electric capacity of voltage regulation (C1, C2, C3, C4),
304 be submodule end of incoming cables,
305 be submodule leading-out terminal.
3011 be power switch pipe (T1, T2, T3, T4, T5, T6, T7, T8, T9),
3012 be diode one (D1, D2, D3, D4, D5, D6, D7, D8, D9).
Embodiment
The present invention is as shown in figure 1, the and of power switch pipe 1 including two half-bridge submodules 3, with anti-parallel diodes
Diode 2, half-bridge submodule 1 include the power switch pipe 2 301 with anti-parallel diodes, the work(with anti-parallel diodes
Rate switching tube 3 302 and electric capacity of voltage regulation 303, the power switch pipe 2 301 with anti-parallel diodes with the pole of reverse parallel connection two
The power switch pipe 3 302 of pipe is connected in series, and the positive terminal of electric capacity of voltage regulation 303 is opened with the power with anti-parallel diodes
The colelctor electrode connection of pipe 2 301 is closed, negative pole end is connected with the emitter stage of the power switch pipe 3 302 with anti-parallel diodes,
The emitter stage of power switch pipe 2 301 with anti-parallel diodes and the power switch pipe 3 302 with anti-parallel diodes
Colelctor electrode between be submodule end of incoming cables 304；The negative pole end of electric capacity of voltage regulation is submodule leading-out terminal 305, it is characterised in that institute
Stating half-bridge submodule 3, one of them is connected with the emitter stage of the power switch pipe 1 with anti-parallel diodes, another
It is connected with the colelctor electrode of the power switch pipe 1 with anti-parallel diodes；
The negative pole of the diode 2 with and with the power switch pipe 1 of anti-parallel diodes emitter stage be connected half
The colelctor electrode connection of the power switch pipe 2 301 with anti-parallel diodes in bridge submodule 3, positive pole and another half-bridge
The emitter stage connection of the power switch pipe 3 302 with anti-parallel diodes in module.
The present invention has end of incoming cables 4 and leading-out terminal 5.End of incoming cables 4 with and power switch pipe 1 with anti-parallel diodes
The submodule end of incoming cables 304 of the connected half-bridge submodule 3 of emitter stage is identical, leading-out terminal 4 and and the work(with anti-parallel diodes
The submodule leading-out terminal 5 of the connected half-bridge submodule 3 of the colelctor electrode of rate switching tube 1 is identical.
The present invention, by the way that submodule is in series, it is direct to avoid switching device using modularization making multilevel converter
Connect the unbalanced-voltage-division weighing apparatus brought the problem of, and MMC is easy to by pressing strategy to realize between each submodule accordingly
DC voltage it is balanced, MMC output levels number can increase to the quantity specified in theory in addition so that the switch frequency of device
Rate substantially reduces.There is DC side failure blocking ability compared to conventional half-bridge submodule, can avoid MMC DC sides that short circuit occurs
The problem of locking fault current is unable to during failure, so as to improve the stability of system.
The present invention can increase N number of half-bridge submodule 3 for increase-volume according to actual use situation.
As shown in figure 3, as N=1, for increase-volume half-bridge submodule 3 submodule end of incoming cables 304 with and with reversely simultaneously
The submodule end of incoming cables 304 of the half-bridge submodule 3 of the colelctor electrode connection of the power switch pipe one of di- pole pipe is connected, for increase-volume
Half-bridge submodule 3 in the negative pole end of electric capacity of voltage regulation be new leading-out terminal 5.
As shown in figure 4, during N=2, the new half-bridge submodule 3 for increase-volume is added on the basis of N=1.New half
The submodule end of incoming cables 304 of bridge submodule 3 is connected with the submodule end of incoming cables 304 of first half-bridge submodule 3 for being used for increase-volume,
The submodule leading-out terminal 305 of new half-bridge submodule 3 is as new leading-out terminal 3.By that analogy, when N takes 3,4,5 ... when
Wait, often increase a new half-bridge submodule 3 for increase-volume, the submodule inlet wire of the new half-bridge submodule 3 for increase-volume
End 304 is all connected with previous submodule end of incoming cables 304, with the conduct of submodule leading-out terminal 305 of stylish half-bridge submodule 3
New leading-out terminal 5.
In order to which timely, complete locking short circuit current flows through half-bridge submodule, it is only necessary to make the both end voltage value of diode 2
Less than 0.In the present invention, when dc-side short-circuit fault occurs for MCC, the power switch pipe 1 with anti-parallel diodes,
Power switch pipe 2 301 with anti-parallel diodes and the power switch pipe with anti-parallel diodes 3 302 are all in lock
Closed state.No matter electric current is in positive half cycle or negative half period, it can be seen from Kirchhoff's law, diode 2 in this state
The magnitude of voltage at both ends is respectively less than 0, so the present invention can realize that complete locking short circuit current flows through when dc-side short-circuit fault
Half-bridge submodule, so as to serve protection circuit, the effect that increases the service life.
When MMC occur dc-side short-circuit fault when, all switching tubes of locking, research now fault current in integrated submodule
Circulation path in block is the key for weighing DC Line Fault ride-through capability.
As shown in fig. 6, when the sense of current for flowing into integrated submodule is timing, the circulation path of electric current includes 5 two poles
Pipe 1 (D1, D3, D5, D6, D8) and 4 electric capacity (C1, C2, C3, C4).
As shown in fig. 7, when the sense of current for flowing through submodule is bears, the circulation path of electric current includes 5 diodes
(D2, D4, D7, D8, D9) and 2 electric capacity (C1, C2).
By taking A, C phase as an example, if DC side breaks down, fault current i>When 0, fault current flow through 10 diodes (D1,
D3, D5, D6, D8), 8 electric capacity (C1, C2, C3, C4) and 2 reactor L.According to Kirchhoff's second law, have
uac=10uD+8Uc+2uL (1)
In formula：uacFor the instantaneous value of ac line voltage；uLFor reactor both end voltage instantaneous value；uDFor the voltage of diode
Instantaneous value；UCFor submodule DC voltage.
Obtained by formula (1)
Therefore, in order to block fault current to flow through submodule, as long as uD<0 can be achieved.
It can be seen from MMC basic theories：
Udc=4UC uac＜ 4UC (3)
Assuming that ignore inductive drop uLInfluence, by formula (2) can obtain that fault current (i.e. u can be blockedD<0) condition is
uac＜ 8UC (4)
It can be obtained according to formula (3), uac<4Uc<8Uc, it is possible to theoretically prove the validity of such scheme.
When the quantity of the conventional half-bridge submodule contained by integrated submodule is respectively 2,3, it is straight can equally to reach suppression
The purpose of side fault current is flowed, therefore in order to reduce cost, 2 or 3 half-bridge submodules can be made to an integrated son
The integrated submodule that module is formed with 4 half-bridge submodules is used cooperatively.Because when half-bridge submodule number contained by integrated submodule
For 2 or 3 when, can similarly reach block MMC direct-current short circuit failures requirement, but now integrate submodule must include
The first two half-bridge submodule, opposite direction switching tube and backward dioded.In addition, when half-bridge submodule number contained by integrated submodule is big
When 4, according to similar to the analysis that half-bridge submodule number is 4, it can be deduced that integrated submodule now can not meet to block
The condition of DC side fault current.
Power switch pipe 1 with anti-parallel diodes, the power switch pipe with anti-parallel diodes in the present invention
2 301 and the power switch pipe 3 302 with anti-parallel diodes be full-control type transistor device, it is preferred to use insulated gate bipolar
Transistor npn npn (IGBT).Insulated gate bipolar transistor (IGBT) reaction time is short, and break-make speed is fast, can realize to failure electricity
Flow rapid locking；Driving power is small, reduces the power consumption of whole circuit, saves the energy；Heat endurance is good, in high temperature environments can
Steady operation.
Staff just can reduce the present invention in reality according to the quantity of actual use situation flexible configuration half-bridge submodule
Power consumption in use, reduces production cost.Improve control efficiency.
As shown in figure 5, it is the simulation waveform of the present invention.The simulation parameter of MMC system models is：DC voltage is
20kV, it is 1kV, DC bus capacitor 15mF to integrate half-bridge submodule DC voltage in submodule.The emulation ginseng of load module
Number is：Resistance is 10 Ω, inductance value 65mH.
In 0.13s, MMC DC sides the two poles of the earth are subjected to short circuit, and by all power switch with anti-parallel diodes
The gate signal shut-off of pipe；In 0.148s, MMC DC side the two poles of the earth short trouble is removed, and using power network to MMC DC sides
Electric capacity is charged；In 0.15s, start MMC and sent out to the gate pole of all power switch pipes with anti-parallel diodes
Send trigger signal.
From simulation waveform as can be seen that before 0.13s, MMC exports the current waveform of three-phase symmetrical, in 0.13s
To between 0.15s, because short trouble occurs for MMC DC sides, submodule is integrated using the blocking direct fault current of itself
Characteristic so that during this period, MMC bridge arm circuits and output current are reduced to rapidly 0, and the delay for avoiding A.C. contactor action is led
Cause it to fail disengagement failure electric current, reach the purpose for blocking DC side failure, and barrier effect is good, is swift in response.
Claims (5)
1. a kind of MMC submodular circuits with DC side failure blocking ability, including two half-bridge submodules, band reverse parallel connection
The power switch pipe one and diode of diode, half-bridge submodule include power switch pipe two, band with anti-parallel diodes
The power switch pipe three and electric capacity of voltage regulation of anti-parallel diodes, the power switch pipe two with anti-parallel diodes with reverse
The power switch pipe three of parallel diode is connected in series, the positive terminal of electric capacity of voltage regulation and the power with anti-parallel diodes
The colelctor electrode connection of switching tube two, negative pole end are connected with the emitter stage of the power switch pipe three with anti-parallel diodes, and band is anti-
To the power switch pipe two of parallel diode emitter stage and the power switch pipe three with anti-parallel diodes colelctor electrode it
Between be submodule end of incoming cables；The negative pole end of electric capacity of voltage regulation is submodule leading-out terminal,
Characterized in that, one of them hair with the power switch pipe one with anti-parallel diodes of the half-bridge submodule
Emitter-base bandgap grading connects, and another is connected with the colelctor electrode of the power switch pipe one with anti-parallel diodes；
The negative pole of the diode with and with the power switch pipe one of anti-parallel diodes the half-bridge submodule that is connected of emitter stage
The colelctor electrode connection of the power switch pipe two with anti-parallel diodes in block, positive pole and the band in another half-bridge submodule
The emitter stage connection of the power switch pipe three of anti-parallel diodes, in addition to N number of half-bridge submodule for increase-volume, using mould
Blockization makes multilevel converter and submodule is in series, and avoid that switching device directly connects that the unbalanced-voltage-division that brings weighs asks
Topic, and MMC submodular circuits realize the equilibrium of the DC voltage between each submodule, in addition MMC by pressing strategy
Submodular circuits output level number increases to the quantity specified so that the switching frequency of device reduces.
2. a kind of MMC submodular circuits with DC side failure blocking ability according to claim 1, its feature exist
In, including end of incoming cables and leading-out terminal；
The end of incoming cables with and with the power switch pipe one of anti-parallel diodes the son of half-bridge submodule that is connected of emitter stage
Module end of incoming cables is identical, leading-out terminal with and with the power switch pipe one of anti-parallel diodes the half-bridge submodule that is connected of colelctor electrode
The submodule leading-out terminal of block is identical.
3. a kind of MMC submodular circuits with DC side failure blocking ability according to claim 1, its feature exist
When, N=1, for increase-volume the half-bridge submodule submodule end of incoming cables with and power switch with anti-parallel diodes
The submodule end of incoming cables of the half-bridge submodule of the colelctor electrode connection of pipe one is connected；
Negative pole end for electric capacity of voltage regulation in the half-bridge submodule of increase-volume is new leading-out terminal.
4. a kind of MMC submodular circuits with DC side failure blocking ability according to claim 3, its feature exist
When, N=2, the end of incoming cables of the half-bridge submodule for increase-volume and going out for the previous half-bridge submodule for increase-volume are increased newly
Line end is connected；
The negative pole end of electric capacity of voltage regulation is new leading-out terminal in the half-bridge submodule newly increased.
5. a kind of MMC submodular circuits with DC side failure blocking ability according to claim 1, its feature exist
In the electric capacity of voltage regulation is electrochemical capacitor.
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| CN106877698A (en) * | 2015-12-10 | 2017-06-20 | 特变电工新疆新能源股份有限公司 | Topological structure of flexible direct-current power transmission system |
| CN105897026A (en) * | 2016-06-16 | 2016-08-24 | 叶亚萱 | Modular multilevel converter |
| CN107947610B (en) * | 2016-10-12 | 2020-05-19 | 特变电工新疆新能源股份有限公司 | MMC module topological structure applied to flexible direct-current power transmission system and modulation method thereof |
| CN107257171A (en) * | 2017-08-22 | 2017-10-17 | 成都银河磁体股份有限公司 | A kind of integral type rotor assembly with sensor magnet and driving magnet |
| CN108631633B (en) * | 2018-05-30 | 2020-08-25 | 上海海事大学 | MMC-based hybrid capacitor voltage type dual-sub-module series connection topological structure |
| CN110417290B (en) | 2019-07-23 | 2020-09-04 | 国网江苏省电力有限公司扬州供电分公司 | Novel modular multilevel converter submodule topological circuit and control method thereof |
| CN113193774B (en) * | 2021-05-10 | 2023-10-31 | 昆明理工大学 | MMC five-level half-bridge anti-serial sub-module FLHASM topological structure |
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| CN103997232A (en) * | 2014-04-29 | 2014-08-20 | 西南交通大学 | Single-phase and three-phase conversion system based on MMC units |
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| CN204906215U (en) * | 2015-08-28 | 2015-12-23 | 江苏省电力公司扬州供电公司 | MMC module circuit with ability is blocked to direct current side trouble |
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| WO2012040257A1 (en) * | 2010-09-21 | 2012-03-29 | Curtiss-Wright Electro-Mechanical Corporation | Two terminal multilevel converter |
| US9431918B2 (en) * | 2012-09-28 | 2016-08-30 | General Electric Company | Grounding scheme for modular embedded multilevel converter |
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| CN104009661A (en) * | 2014-04-08 | 2014-08-27 | 华南理工大学 | Method for controlling voltages of direct current capacitors of six-switching-group or nine-switching-group MMC converter |
| CN103944430A (en) * | 2014-04-25 | 2014-07-23 | 中国科学院电工研究所 | Modularization multi-level current converter subunit topology part |
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Address after: 225009 Weiyang Road, Jiangsu, China, No. 179, No. Applicant after: YANGZHOU POWER SUPPLY COMPANY, STATE GRID JIANGSU ELECTRIC POWER COMPANY Applicant after: State Grid Corporation of China Address before: 225009 Weiyang Road, Jiangsu, China, No. 179, No. Applicant before: Yangzhou Power Supply Company of Jiangsu Electric Power Company Applicant before: State Grid Corporation of China |
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Inventor after: Wang Jing Inventor after: Wu Zhijian Inventor after: Li Peipei Inventor after: Shen Fei Inventor after: Ren Hongqiang Inventor after: Xu Huanhuan Inventor after: Bo Yang Inventor after: Chen Guoyu Inventor before: Shen Fei Inventor before: Wu Zhijian Inventor before: Li Peipei Inventor before: Wang Jing Inventor before: Ren Hongqiang Inventor before: Xu Huanhuan Inventor before: Bo Yang Inventor before: Chen Guoyu |
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