CN105116599A - Thin film transistor liquid crystal display - Google Patents
Thin film transistor liquid crystal display Download PDFInfo
- Publication number
- CN105116599A CN105116599A CN201510589721.5A CN201510589721A CN105116599A CN 105116599 A CN105116599 A CN 105116599A CN 201510589721 A CN201510589721 A CN 201510589721A CN 105116599 A CN105116599 A CN 105116599A
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- CN
- China
- Prior art keywords
- polaroid
- thin film
- film transistor
- polarizer
- lcd
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
- G02F1/133531—Polarisers characterised by the arrangement of polariser or analyser axes
Abstract
The invention provides a thin film transistor liquid crystal display which comprises a first polarizer, an array substrate, a colored filter substrate, a second polarizer and conductive glue. The array substrate is located above the first polarizer, the colored filter substrate is opposite to the array substrate, a liquid crystal layer is clamped between the colored filter substrate and the array substrate, the second polarizer is located above the colored filter substrate, the side edge of the second polarizer is cut into a special shape, and the conductive glue is arranged between the second polarizer and the colored filter substrate in a coating mode. The side edge of the second polarizer, the side edge of the conductive glue and the side edge of the colored filter substrate further comprise silver glue which is electrically coupled with the second polarizer. Compared with the prior art, the side edge of the second polarizer is cut into the special shape such as a corrugated shape, so that the contact area of the conductive silver glue and the second polarizer is increased along with increasing of the length of a curve on the side edge of the second polarizer, smaller grounded impedance is obtained, and a more reliable electrostatic discharge path is formed.
Description
Technical field
The present invention relates to a kind of lcd technology, particularly relate to a kind of Thin Film Transistor-LCD.
Background technology
Liquid crystal indicator mainly comprises colored optical filtering substrates (colorfiltersubstrate), array base palte (arraysubstrate), liquid crystal layer (liquidcrystallayer), sealed plastic box (frame) and printed circuit board (PCB) (printedcircuitboard, PCB).Normally, colored optical filtering substrates is provided with black matrix and photoresistance, and array base palte is provided with thin film transistor (TFT) (ThinFilmTransistor, TFT), is provided with chock insulator matter in liquid crystal layer.In the making and use procedure of liquid crystal indicator, easy generation electrostatic is also gathered in colored optical filtering substrates, when electrostatic accumulation will produce electrostatic field to a certain extent, this electrostatic field will disturb the electric field of the inner liquid crystal molecule of liquid crystal panel, and then causes display frame abnormal.In this sense, shielding or eliminate extraneous static extremely important to liquid crystal indicator.
In the prior art, eliminate electrostatic influence and roughly comprise two kinds of approach: one is reduce or electrostatic isolation source, but the method can not eliminate the problem of electrostatic accumulation completely; Two is that electrostatic is derived by the specific structure of design or circuit in time, thus eliminates electrostatic completely.Be provided with antistatic backing at the outside surface of color membrane substrates, by coating electrically conductive elargol, antistatic backing be connected with the earth terminal on array base palte, thus reach the effect preventing electrostatic.For the latter, current a solution is, by the polaroid edge coating electrically conductive elargol above colored optical filtering substrates, and the zero potential of this conductive silver glue with the thin film transistor (TFT) of array base palte is connected, to eliminate the electrostatic be accumulated on colored optical filtering substrates.But, this scheme, when conductive silver glue breaks glue, often causes the ground wire loose contact of polaroid and array base palte, thus cannot be derived by the electrostatic on colored optical filtering substrates in time, also by making the arrangement of liquid crystal molecule be affected time serious, cause pixel light leak.In addition, the too small conduction that yet easily causes of the contact area of conductive silver glue and polaroid is not good, or application place can cause the edge of polaroid to occur the bad situations such as foaming.
In view of this, how to design a kind of ground structure for Thin Film Transistor-LCD, effectively to remove the electrostatic accumulation on colored optical filtering substrates, thus to overcome above-mentioned defect of the prior art or deficiency, it is the problem that person skilled is urgently to be resolved hurrily in the industry.
Summary of the invention
For Thin Film Transistor-LCD of the prior art existing above-mentioned defect when eliminating electrostatic, that the invention provides a kind of novelty, that conductive silver glue and upper polaroid can be increased contact area and the excellent Thin Film Transistor-LCD of electric conductivity.
According to one aspect of the present invention, provide a kind of Thin Film Transistor-LCD, comprising:
One first polaroid;
Array basal plate, is positioned at the top of described first polaroid;
One colored optical filtering substrates, is oppositely arranged with described array base palte, is clamped with liquid crystal layer between described colored optical filtering substrates and described array base palte;
One second polaroid, is positioned at the top of described colored optical filtering substrates, and the side of described second polaroid is that abnormity cuts and is made; And
One conducting resinl, coats between described second polaroid and described colored optical filtering substrates,
Wherein, the side of the side of described second polaroid, the side of described conducting resinl and described colored optical filtering substrates also comprises an elargol, the second polaroid described in this elargol electric property coupling.
An embodiment wherein, the side of described second polaroid is waveform.
An embodiment wherein, the contact area of described second polaroid and described elargol is the product of the length of curve of the side of described second polaroid and the thickness of described second polaroid.
An embodiment wherein, one end of described elargol is electrically coupled to described second polaroid, and the other end is electrically coupled to the grounding circuit on described array base palte.
An embodiment wherein, described grounding circuit is a flexible PCB (FlexiblePrintedCircuit, FPC).
An embodiment wherein, this Thin Film Transistor-LCD is touch control display.
An embodiment wherein, described Thin Film Transistor-LCD also comprises a cover-plate glass, is positioned at the top of described second polaroid.
Adopt Thin Film Transistor-LCD of the present invention, array base palte is positioned at the top of the first polaroid, colored optical filtering substrates and array base palte are oppositely arranged, second polaroid is positioned at the top of colored optical filtering substrates, the side of the second polaroid is that abnormity cuts and is made, conducting resinl is coated between the second polaroid and colored optical filtering substrates, and the side of the side of the second polaroid, the side of conducting resinl and colored optical filtering substrates also comprises an elargol, this elargol electric property coupling second polaroid.Compared to prior art, second polaroid side of the present invention adopts abnormity to cut mode and makes such as wave-like, the contact area of conductive silver glue and polaroid is made to increase and increase because of the length of curve of polaroid side, thus obtain less impedance ground, form more reliable Electro-static Driven Comb path.
Accompanying drawing explanation
Reader, after having read the specific embodiment of the present invention with reference to accompanying drawing, will become apparent various aspects of the present invention.Wherein,
Figure 1A illustrates the view of a kind of upper polaroid of Thin Film Transistor-LCD of the prior art and the connected mode of conductive silver glue;
The view of the connected mode of polaroid and conductive silver glue on the another kind that Figure 1B illustrates Thin Film Transistor-LCD of the prior art;
Fig. 1 C illustrate Thin Film Transistor-LCD of the prior art another on the view of connected mode of polaroid and conductive silver glue;
Fig. 1 D illustrates the schematic diagram of the contact area between upper polaroid in Fig. 1 C and conductive silver glue;
Fig. 2 A illustrates in the Thin Film Transistor-LCD according to one embodiment of the present invention, the view of the connected mode of upper polaroid and conductive silver glue; And
Fig. 2 B illustrates the schematic diagram of the contact area between upper polaroid in Fig. 2 A and conductive silver glue.
Embodiment
The technology contents disclosed to make the application is more detailed and complete, and can refer to accompanying drawing and following various specific embodiment of the present invention, mark identical in accompanying drawing represents same or analogous assembly.But those of ordinary skill in the art should be appreciated that hereinafter provided embodiment is not used for limiting the scope that contains of the present invention.In addition, accompanying drawing, only for being schematically illustrated, is not drawn according to its life size.
With reference to the accompanying drawings, the embodiment of various aspects of the present invention is described in further detail.
Figure 1A to Fig. 1 C respectively illustrates the view of three kinds of upper polaroids of Thin Film Transistor-LCD of the prior art and the connected mode of conductive silver glue.Below respectively the conductive silver glue part in Figure 1A, Figure 1B and Fig. 1 C is described in detail.
With reference to Figure 1A, Thin Film Transistor-LCD comprises array base palte (thinfilmtransistorarraysubstrate) 100, colored optical filtering substrates (colorfiltersubstrate) 102, upper polaroid (upperpolarizer) 104, conductive layer (conductivelayer) 106 and conductive silver glue (conductiveAgpaste) 108.Wherein, conductive layer 106 is positioned at the top of polaroid 104, conductive silver glue 108 coat the upper surface of conductive layer 106 and side, the side of upper polaroid 104, the upper surface of colored optical filtering substrates 102 and side and array base palte 100 grounding circuit (such as, grounding circuit can be a flexible PCB.As mentioned before, by upper polaroid 104 edge coating electrically conductive elargol 108, and this conductive silver glue 108 is connected with the zero potential of the thin film transistor (TFT) of array base palte, thus the electrostatic be accumulated on colored optical filtering substrates can be eliminated.But, a part due to conductive silver glue 108 is coated on the upper surface of conductive layer 106, when assembling the cover-plate glass (coverglass) 110 be positioned on conductive layer 106, easily occur that cover-plate glass 110 attaches irregular problem, as shown in the filled black part of Figure 1A.
With reference to Figure 1B, it is different from Figure 1A, conductive layer 106 and upper polaroid 104 have been exchanged position by this Thin Film Transistor-LCD, namely, conductive layer 106 is positioned at the top of colored optical filtering substrates 102, and upper polaroid 104 is arranged on the top of conductive layer 106, conductive silver glue 108 is coated on the grounding circuit of upper surface of the lower surface of conductive layer 106, the side of colored optical filtering substrates 102 and array base palte 100.Although this design can't occur that such as cover-plate glass attaches irregular problem, the edge of polaroid 104 is easily caused to occur the bad situations such as foaming.
With reference to Fig. 1 C, it has done fine setting on the basis of Figure 1B, conductive layer 106 is positioned at the top of colored optical filtering substrates 102, and upper polaroid 104 is positioned at the top of conductive layer 106, conductive silver glue 108 coats the grounding circuit of upper surface of the side of polaroid 104, the side of conductive layer 106, the upper surface of colored optical filtering substrates 102 and side and array base palte 100 continuously.But, conductive silver glue 108 is not good with the too small conduction that yet may cause of contact area of upper polaroid 104, polaroid 104 is made to occur loose contact with the earthing potential of array base palte 100, if cannot in time the electrostatic on colored optical filtering substrates 102 be derived, by making the arrangement of liquid crystal molecule be affected, time serious, also there will be pixel light leak.As shown in figure ip, the contact area between conductive silver glue 108 and upper polaroid 104 is the product of the thickness of length L1 and upper polaroid 104, and wherein, L1 represents the contact length between conductive silver glue 108 and upper polaroid 104.
In order to solve above-mentioned many puzzlements of the prior art and harmful effect, the conductive silver glue that the invention provides a kind of Thin Film Transistor-LCD is connected with the modified of upper polaroid and designs.Fig. 2 A illustrates in the Thin Film Transistor-LCD according to one embodiment of the present invention, the view of the connected mode of upper polaroid and conductive silver glue, and Fig. 2 B illustrates the schematic diagram of the contact area between upper polaroid in Fig. 2 A and conductive silver glue.
With reference to Fig. 2 A, similar to Fig. 1 C, Thin Film Transistor-LCD of the present invention to comprise on array basal plate 200, colored optical filtering substrates 202, a polaroid 204, conductive layer 206, conductive silver glue 208 and once polaroid (lowerpolarizer) 210.Wherein, conductive layer 206 is positioned at the top of colored optical filtering substrates 202, and upper polaroid 204 is arranged on the top of conductive layer 206, and lower polaroid 210 is arranged on the below of array base palte 200.Colored optical filtering substrates 202 and array base palte 200 are oppositely arranged, and are clamped with liquid crystal layer (not shown) therebetween.
It should be noted that, it is be that the present invention is different from prior art, has carried out improvement design to the side edge shape of upper polaroid 204, that is, the side of upper polaroid 204 is designed to abnormity and cuts be made (e.g., waveform or serrate etc.).As shown in Figure 2 B, when conductive silver glue 208 coat the side of upper polaroid 204, the upper surface of conductive layer 206 and side, the upper surface of colored optical filtering substrates 202 and side and array base palte 200 grounding circuit time, side due to upper polaroid 204 is waveform, its contact length L2 can be greater than the contact length L1 in Fig. 1 D, thus the contact area between conductive silver glue 208 and upper polaroid 204 be can increase, less impedance ground and more reliable ground connection realized.At this, contact area is the product of the length of curve L2 of the side of upper polaroid 204 and the thickness of upper polaroid 204.
Adopt Thin Film Transistor-LCD of the present invention, array base palte is positioned at the top of the first polaroid, colored optical filtering substrates and array base palte are oppositely arranged, second polaroid is positioned at the top of colored optical filtering substrates, the side of the second polaroid is that abnormity cuts and is made, conducting resinl is coated between the second polaroid and colored optical filtering substrates, and the side of the side of the second polaroid, the side of conducting resinl and colored optical filtering substrates also comprises an elargol, this elargol electric property coupling second polaroid.Compared to prior art, second polaroid side of the present invention adopts abnormity to cut mode and makes such as wave-like, the contact area of conductive silver glue and polaroid is made to increase and increase because of the length of curve of polaroid side, thus obtain less impedance ground, form more reliable Electro-static Driven Comb path.
Above, the specific embodiment of the present invention is described with reference to the accompanying drawings.But those skilled in the art can understand, when without departing from the spirit and scope of the present invention, various change and replacement can also be done to the specific embodiment of the present invention.These change and replace and all drop in claims of the present invention limited range.
Claims (7)
1. a Thin Film Transistor-LCD, is characterized in that, this Thin Film Transistor-LCD comprises:
One first polaroid;
Array basal plate, is positioned at the top of described first polaroid;
One colored optical filtering substrates, is oppositely arranged with described array base palte, is clamped with liquid crystal layer between described colored optical filtering substrates and described array base palte;
One second polaroid, is positioned at the top of described colored optical filtering substrates, and the side of described second polaroid is that abnormity cuts and is made; And
One conducting resinl, coats between described second polaroid and described colored optical filtering substrates,
Wherein, the side of the side of described second polaroid, the side of described conducting resinl and described colored optical filtering substrates also comprises an elargol, the second polaroid described in this elargol electric property coupling.
2. Thin Film Transistor-LCD according to claim 1, is characterized in that, the side of described second polaroid is waveform.
3. Thin Film Transistor-LCD according to claim 2, is characterized in that, the contact area of described second polaroid and described elargol is the product of the length of curve of the side of described second polaroid and the thickness of described second polaroid.
4. Thin Film Transistor-LCD according to claim 1, is characterized in that, one end of described elargol is electrically coupled to described second polaroid, and the other end is electrically coupled to the grounding circuit on described array base palte.
5. Thin Film Transistor-LCD according to claim 4, is characterized in that, described grounding circuit is a flexible PCB.
6. Thin Film Transistor-LCD according to claim 1, is characterized in that, described Thin Film Transistor-LCD is a touch control display.
7. Thin Film Transistor-LCD according to claim 6, is characterized in that, described Thin Film Transistor-LCD also comprises a cover-plate glass, is positioned at the top of described second polaroid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510589721.5A CN105116599A (en) | 2015-09-16 | 2015-09-16 | Thin film transistor liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510589721.5A CN105116599A (en) | 2015-09-16 | 2015-09-16 | Thin film transistor liquid crystal display |
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| Publication Number | Publication Date |
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| CN105116599A true CN105116599A (en) | 2015-12-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510589721.5A Pending CN105116599A (en) | 2015-09-16 | 2015-09-16 | Thin film transistor liquid crystal display |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105487283A (en) * | 2016-01-28 | 2016-04-13 | 武汉华星光电技术有限公司 | LCD and LCD panel thereof |
| CN105573557A (en) * | 2016-02-02 | 2016-05-11 | 武汉华星光电技术有限公司 | Touch display panel and touch display device |
| CN109031800A (en) * | 2017-06-12 | 2018-12-18 | 三星显示有限公司 | Display device including backlight assembly |
| CN109116649A (en) * | 2018-09-26 | 2019-01-01 | 上海中航光电子有限公司 | Display panel and display device |
| CN109785746A (en) * | 2018-12-28 | 2019-05-21 | 友达光电（昆山）有限公司 | A kind of display device |
| CN111240074A (en) * | 2020-01-15 | 2020-06-05 | 南京中电熊猫平板显示科技有限公司 | Touch screen |
| CN111766732A (en) * | 2020-07-30 | 2020-10-13 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN111930263A (en) * | 2020-09-14 | 2020-11-13 | 武汉华星光电技术有限公司 | Touch display panel and touch display device |
| CN112198695A (en) * | 2020-10-28 | 2021-01-08 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN113179623A (en) * | 2021-04-06 | 2021-07-27 | 武汉华星光电半导体显示技术有限公司 | Display module |
-
2015
- 2015-09-16 CN CN201510589721.5A patent/CN105116599A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017128525A1 (en) * | 2016-01-28 | 2017-08-03 | 武汉华星光电技术有限公司 | Liquid crystal display device and liquid crystal display panel thereof |
| CN105487283A (en) * | 2016-01-28 | 2016-04-13 | 武汉华星光电技术有限公司 | LCD and LCD panel thereof |
| CN105573557A (en) * | 2016-02-02 | 2016-05-11 | 武汉华星光电技术有限公司 | Touch display panel and touch display device |
| CN105573557B (en) * | 2016-02-02 | 2018-12-21 | 武汉华星光电技术有限公司 | Touch-control display panel and touch control display apparatus |
| CN109031800A (en) * | 2017-06-12 | 2018-12-18 | 三星显示有限公司 | Display device including backlight assembly |
| CN109116649B (en) * | 2018-09-26 | 2022-03-11 | 上海中航光电子有限公司 | Display panel and display device |
| CN109116649A (en) * | 2018-09-26 | 2019-01-01 | 上海中航光电子有限公司 | Display panel and display device |
| CN109785746A (en) * | 2018-12-28 | 2019-05-21 | 友达光电（昆山）有限公司 | A kind of display device |
| CN109785746B (en) * | 2018-12-28 | 2022-02-01 | 友达光电（昆山）有限公司 | Display device |
| CN111240074A (en) * | 2020-01-15 | 2020-06-05 | 南京中电熊猫平板显示科技有限公司 | Touch screen |
| CN111766732A (en) * | 2020-07-30 | 2020-10-13 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN111930263A (en) * | 2020-09-14 | 2020-11-13 | 武汉华星光电技术有限公司 | Touch display panel and touch display device |
| CN112198695A (en) * | 2020-10-28 | 2021-01-08 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN113179623A (en) * | 2021-04-06 | 2021-07-27 | 武汉华星光电半导体显示技术有限公司 | Display module |
| CN113179623B (en) * | 2021-04-06 | 2022-11-01 | 武汉华星光电半导体显示技术有限公司 | Display module |
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| WD01 | Invention patent application deemed withdrawn after publication |