CN105112890A - Film capacitor manufacturing technology and equipment - Google Patents
Film capacitor manufacturing technology and equipment Download PDFInfo
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- CN105112890A CN105112890A CN201510460257.XA CN201510460257A CN105112890A CN 105112890 A CN105112890 A CN 105112890A CN 201510460257 A CN201510460257 A CN 201510460257A CN 105112890 A CN105112890 A CN 105112890A
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Abstract
The invention discloses a film capacitor manufacturing technology and equipment, in particular a technology and equipment for manufacturing a film capacitor on the surface of an aluminum foil by adopting a vacuum plasma chemical vapor deposition diamond-like film and amorphous aluminum film technology, and belongs to the technical field of manufacturing of electronic elements. As an amorphous aluminum film has a larger surface area to store more electric power, and a diamond-like film is excellent in insulation performance, heat impact resistance and toughness, the film capacitor manufactured by compounding the two film materials has the characteristics of high-voltage resistance, high-temperature resistance, small volume, light weight and high capacitance, and is suitable for the manufacturing industry of various high-grade microelectronic products.
Description
1, technical field
The present invention adopts gas phase deposition technology to prepare the membrane capacitance of amorphous aluminum film composite diamond thin film fabrication, there is high voltage withstanding, high temperature resistant, that volume is little, lightweight, electrical capacity is large feature, be applicable to microelectronic product manufacturing, belong to manufacture field of electronic elements.
2, technical background
The diamond like carbon film adopting normal temperature gas phase deposition technology to prepare has high specific inductivity and thermal conductivity, its excellent insulation performance, and resistance to sudden heating is good, is the splendid insulation, the heat-eliminating medium that manufacture high-side capacitance.The amorphous aluminum film adopting low temperature vapor deposition technology to prepare has larger specific surface area, is beneficial to and stores more electricity, both compounds be may be used for manufacturing the high-grade electrical condenser of high voltage withstanding, high temperature resistant, volume is little, lightweight, electrical capacity is large a new generation.
3, summary of the invention
Adopt vacuum plasma chemical vapor depsotition equipment to produce the device of capacitor plate as preparation and composite diamond film and amorphous aluminum film, be beneficial to the ultra-thin capacitor plate of manufacture.
Adopt aluminium foil as the substrate of vapor deposition reaction settling amorphous aluminum film, not only conductivity is good, and settling has good bonding force on its surface.
Adopting volatility aluminum contained compound as preparing amorphous aluminum film raw material, being beneficial to the aluminum ion produced in plasma cvd reactor process and being reduced to gaseous aluminum atom.
Adopt carbon containing mixed gas as preparation diamond like carbon film raw material, be beneficial to deposition and generate and there is certain toughness be not easy the diamond like carbon film come off that chaps.
Adopt settling shutter to be used for preventing settling diamond like carbon film to be deposited on the specific weld of substrate, affect the conductivity of capacitor plate.
The plasma flat electrode adopting liquid nitrogen circulation device to make to have hollow structure keeps low temperature, and gaseous metal aluminium atom can be made to keep the aluminum substrates surface rapid solidification of low temperature, and orientated deposition is amorphous aluminum film.
Adopt the ultra-thin capacitor plate mode of the some parallel superpositions of welding in parallel, the technique manufacturing miniature high energy capacitor can be simplified.
4, accompanying drawing explanation
Accompanying drawing 1: the vacuum plasma chemical vapor depsotition equipment that the present invention uses is made up of vacuum chamber (1), high frequency bias power supply (2), vacuum pump (3), carbon containing mixed gas (4) feeding mechanism (5), aluminum contained compound (6) gasification installation (7), liquid nitrogen cooling back installation (8), high frequency plasma plate electrode (9), aluminum substrates (10), shutter (11), feeding gate (18).
Accompanying drawing 2: ultra-thin capacitor plate (12) all deposits a layer thickness by upper and lower surface and is about the aluminium foil (10) that the amorphous aluminum film (14) of 0.1-1 micron and a layer thickness be about the diamond like carbon film (13) of 0.1-0.5 micron and forms.Aluminium foil (10) upper and lower surface of capacitor plate (12) weld (15), there is no diamond like carbon film (13) and amorphous aluminum film (14) settling because the plate (11) that is blocked in deposition process covers, derive UNICOM's contact of pole plate (12) and wire (16) as electric capacity.
Accompanying drawing 3: by capacitor plate (12) according to producing the specification requirement of electric capacity after weld (15) medullary ray cuts, by some chip capacitor pole plates (12) according to weld (15) antiparallel superposition, after parallel form welding lead (16) and wire (17), using wire (16) and wire (17) the leading-out end external wire as electric capacity.
5, specific embodiments
Open vacuum plasma chemical vapor depsotition equipment feeding gate (18), capacitor stage aluminum substrates (10) is placed on the surface being in high frequency plasma plate electrode (9) bias voltage negative plate, place shutter (11) on aluminum substrates (10) surface, close feeding gate (18).
Start the gas that vacuum pump (3) pumps vacuum chamber (1).
Start gas supply device (7) and pass into aluminum contained compound aluminum chloride (6) gas to vacuum chamber (1).
Start high frequency and grid bias power supply (2), between plate electrode (9), plasma cvd reactor occurs.
Start liquid nitrogen cycle device (8) passes into liquid nitrogen to plate electrode (9) bias voltage negative plate internal passages, the bias voltage negative plate of plate electrode (9) is cooled rapidly, during aluminum substrates (10) of gaseous aluminum atomic contacts plate electrode (9) bias voltage negative plate surface coverage, quick cooling, is condensed into the amorphous aluminum film (14) that thickness is about 0.1-1 micron.
Close aluminum compound (6) gas supply device (7) and liquid nitrogen circulation device (8).
Start gas (4) feeding mechanism (5) and pass into carbon containing mixed gas (4) to vacuum chamber (1), gaseous carbon atom generates at crystallite aluminium film (14) surface deposition the diamond like carbon film (13) that thickness is about 0.1-0.5 micron.
According to above-mentioned same process by aluminum substrates (10) another side deposited amorphous state aluminium film (14) and diamond like carbon film (13).
The capacitor plate (12) prepared is taken out from vacuum chamber (1), according to producing the specification requirement of electric capacity after capacitor plate (12) is cut into some small area capacitor plates (12) along center line by weld (15), to be parallel to each other superposition according to weld (15) reverse sequence, with parallel way, weld, the same side (15) are welded on wire (16), opposite side weld (15) be welded on wire (17), wire (16) and wire (17) are respectively as the external wire of electric capacity.
After encapsulation, make electric capacity finished product.
Claims (6)
1. the membrane capacitance of diamond thin and these two kinds of mould material composite manufacturings of amorphous aluminum film is exclusive, technical characteristic is unlike the prior art: ultra-thin capacitor plate (12) all deposits by upper and lower surface the amorphous aluminum film (14) that a layer thickness is about 0.1-1 micron, and a layer thickness is about capacitor stage aluminium foil (10) formation of the diamond like carbon film (13) of 0.1-0.5 micron.
2. the membrane capacitance according to claim 1, its technical characteristic is that aluminium foil (10) upper and lower surface of capacitor plate (12) weld (15) does not have settling diamond like carbon film (13) and amorphous aluminum film (14), is capacitor plate (12) and the conducting contact of external wire (16), external wire (17).
3. the membrane capacitance according to claim 1, its technical characteristic is according to producing the specification requirement of electric capacity after weld (15) cut by capacitor plate (12), by some chip capacitor pole plates (12) according to weld (15) antiparallel superposition, with wire (16) and wire (17) by it with after parallel form welding, using wire (16) and wire (17) the leading-out end external wire as electric capacity.
4. the membrane capacitance according to claim 1, its technical characteristic is that the vacuum plasma chemical vapor depsotition equipment used is made up of vacuum chamber (1), high frequency bias power supply (2), vacuum pump (3), carbon containing mixed gas (4) feeding mechanism (5), aluminum contained compound (6) gasification installation (7), liquid nitrogen cooling back installation (8), high frequency plasma plate electrode (9), capacitor stage aluminum substrates (10), shutter (11), feeding gate (18).
5. the membrane capacitance according to claim 1, its technical characteristic utilizes to include but not limited to as dielectric compound, diamond like carbon film (13) includes but not limited to that the non-crystalline state of amorphous aluminum film (14) or microcrystalline metal film form ultrathin membrane capacitive means as storage electric charge pole plate (12).
6. the membrane capacitance according to claim 1, its technical characteristic utilizes to include but not limited to that aluminium foil (10) manufactures the capacitor plate (12) of plasma activated chemical vapour deposition diamond like carbon film (13) and amorphous metal film (14) as substrate material (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510460257.XA CN105112890A (en) | 2015-07-25 | 2015-07-25 | Film capacitor manufacturing technology and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510460257.XA CN105112890A (en) | 2015-07-25 | 2015-07-25 | Film capacitor manufacturing technology and equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105112890A true CN105112890A (en) | 2015-12-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510460257.XA Pending CN105112890A (en) | 2015-07-25 | 2015-07-25 | Film capacitor manufacturing technology and equipment |
Country Status (1)
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| CN (1) | CN105112890A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565067A (en) * | 2019-09-25 | 2019-12-13 | 郑州华晶新能源科技有限公司 | Metallized diamond nano composite plating film and preparation method thereof |
| CN110983300A (en) * | 2019-12-04 | 2020-04-10 | 江苏菲沃泰纳米科技有限公司 | Coating equipment and application thereof |
| CN115386856A (en) * | 2022-10-19 | 2022-11-25 | 季华实验室 | Diamond thin film capacitor, manufacturing method thereof, vacuum gauge and manufacturing method thereof |
-
2015
- 2015-07-25 CN CN201510460257.XA patent/CN105112890A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110565067A (en) * | 2019-09-25 | 2019-12-13 | 郑州华晶新能源科技有限公司 | Metallized diamond nano composite plating film and preparation method thereof |
| CN110983300A (en) * | 2019-12-04 | 2020-04-10 | 江苏菲沃泰纳米科技有限公司 | Coating equipment and application thereof |
| CN115386856A (en) * | 2022-10-19 | 2022-11-25 | 季华实验室 | Diamond thin film capacitor, manufacturing method thereof, vacuum gauge and manufacturing method thereof |
| CN115386856B (en) * | 2022-10-19 | 2023-06-02 | 季华实验室 | Diamond thin film capacitor, method for manufacturing the same, vacuum gauge and method for manufacturing the same |
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| C06 | Publication | ||
| PB01 | Publication | ||
| CB02 | Change of applicant information |
Address after: 104 2A, 518017 village, Futian District, Shenzhen, Guangdong, Yitian Applicant after: Liu Nanlin Address before: 421800 Leiyang City, Hunan Province Hunan Prison fourteen prison area Applicant before: Liu Nanlin |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151202 |
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| WD01 | Invention patent application deemed withdrawn after publication |