CN105093811A - Method and system for estimation of large mask error enhancement factor (MEEF) graph - Google Patents
Method and system for estimation of large mask error enhancement factor (MEEF) graph Download PDFInfo
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Abstract
The invention discloses a method and system for estimation of a large mask error enhancement factor (MEEF) graph. The method comprises the following steps of overall increasing an offset amount a and decreasing an offset amount b of an original optical mask layer to obtain an optical mask layer graph A of an overall increasment offset amount a and an optical mask layer graph B of an overall reduction offset amount b; simulating the optical mask layer graph A and the optical mask layer graph B by using an optical proximity correction (OPC) model to obtain a simulation silicon wafer graph AA of the optical mask layer graph A and a simulation silicon wafer graph BB of the optical mask layer graph B; carrying out logic operation of the simulation silicon wafer graph AA and the simulation silicon wafer graph BB to obtain a different graph; and calculating the width of the different graph, and selecting the position with a large width of the different graph. By the method and the system, the problem that certain graphs are not considered to become new hot points on a silicon wafer because an MEFF is large and can be combined with an error of an optical mask during conventional hot point detection of the silicon wafer can be effectively avoided, and an important basis is provided for subsequent hot point verification and process optimization.
Description
Technical field
The present invention relates to OPC (OpticalProximityCorrection, optics closes on correction) method, particularly relate to a kind of change light shield side-play amount, the method and system estimating the larger figure of MEEF of MEEF (MaskErrorEnhancementFactor, mask error enhancer) are calculated according to OPC analog result.
Background technology
MEEF (MaskErrorEnhancementFactor, mask error enhancer) is usually used as one of standard weighing photoetching process processing procedure.MEEF is defined as MEEF=△ CD silicon chip/△ (CD light shield/M), and CD is the abbreviation of CriticalDimension (critical dimension).Wherein, M is the enlargement factor of light shield, the variable quantity of M is 4, CD light shield be under normal circumstances 4 times of light shield CD, CD light shield/M to be 1 times of light shield CD, △ (CD light shield/M) be CD on 1 times of light shield, and △ CD silicon chip is the variable quantity of CD on silicon chip).MEFF also can be understood as 1 times of light shield CD and changes 1nm, the variable quantity of CD on silicon chip.MEEF is larger, illustrates that on silicon chip, CD is larger by the impact of light shield variable quantity.
Because the minimum design rule of every one deck is different, namely the minimum CD of every one deck is different, and for the consideration of precision and cost, the light shield grade that different lithography layer uses is also different.Light shield higher grade, and the error of actual light shield CD and desirable light shield CD is less.But the light shield of any grade, always there is error in actual light shield CD and desirable light shield CD.The error of MEEF and light shield combines, and can produce larger impact, △ CD silicon chip=MEEF* △ (CD light shield/M) to silicon chip CD.
Photoetching process exploitation and the inspection of silicon chip focus concentrate on the smaller indivedual figures of lithographic process window under normal circumstances, and on actual light shield, pattern class is a lot, and the MEEF of conventional pattern is difficult to the MEEF accurately representing actual graphical.
Summary of the invention
For overcoming the deficiency that above-mentioned prior art exists, the object of the present invention is to provide a kind of method and system estimating the larger figure of MEEF, it is when OPC checks, the method utilizing OPC model to simulate filters out the figure that in all light mask images, MEEF is larger, subsequent authentication is carried out as the focus on silicon chip, effectively prevent in the inspection of conventional silicon wafers focus do not consider some figure due to MEFF larger, may combine with the error of light shield, become the problem of focus new on silicon chip, for follow-up hotspot validates and process optimization provide important evidence.
For reaching above-mentioned and other object, the present invention proposes a kind of method estimating the larger figure of MEEF, comprises the steps:
Step one, on the basis of original mask layer, side-play amount (a) and overall reduction side-play amount (b) are increased to original mask layer entirety, obtains overall the mask layer figure (A) and the mask layer figure (B) that increase side-play amount (a) and overall reduction side-play amount (b);
Step 2, utilize OPC model to simulate this mask layer figure (A) and mask layer figure (B), obtain simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB) of mask layer figure (A) and mask layer figure (B);
Step 3, carries out logical operation to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB), obtains the difference picture (CC) of this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB);
Step 4, calculates the width of this difference picture (CC), selects the position that this difference picture (CC) width is larger.
Further, in step 3, logical not operation is carried out to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB).
Further, the width of this difference picture (CC) is that 1 times of light shield CD changes, the variable quantity of CD on simulation silicon chip.
Further, the width of this difference picture (CC) is larger, then illustrate that MEEF is larger, on silicon chip, CD is larger by the impact of light shield variable quantity.
Further, in step 4, select the position of 10% maximum figure of this difference picture (CC) width.
Further, this entirety increases side-play amount a with overall reduction side-play amount b is 0.5nm.
For achieving the above object, the present invention also provides a kind of system estimating the larger figure of MEEF, comprising:
Convergent-divergent module, on the basis of original mask layer, side-play amount (a) and overall reduction side-play amount (b) are increased to original mask layer entirety, obtains overall the mask layer figure (A) and the mask layer figure (B) that increase side-play amount a and overall reduction side-play amount b;
OPC simulates module, utilize OPC model to simulate this mask layer figure (A) and mask layer figure (B), obtain simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB) of this mask layer figure (A) and mask layer figure (B);
Logical operation module, logical operation is carried out to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB), obtains the difference picture (CC) of this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB);
Width calculation module, for calculating the width of this difference picture (CC), selects the position that this difference picture (CC) width is larger.
Further, this logical operation module carries out logical not operation to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB).
Further, this width calculation module selects the position of 10% maximum figure of this difference picture (CC) width.
Further, this entirety increases side-play amount a with overall reduction side-play amount b is 0.5nm.
Compared with prior art, the method and system of the larger figure of a kind of MEEF of estimating of the present invention are when OPC checks, mimic diagram after utilizing OPC model simulation to increase mask layer overall offset amount on silicon chip and the mimic diagram after reducing mask layer overall offset amount on silicon chip, calculate the MEEF of equal value of all mask layer figures, filter out the figure that in all light mask images, MEEF is larger, and determine in conjunction with DOF the figure that lithographic process window is less, effectively prevent in the inspection of conventional silicon wafers focus do not consider some figure due to MEFF larger, may combine with the error of light shield, become the problem of focus new on silicon chip, for follow-up hotspot validates and process optimization provide important evidence, the present invention can as the reference of photoetching process exploitation, also subsequent authentication can be carried out as the focus on silicon chip.
Accompanying drawing explanation
Fig. 1 is a kind of method estimating the larger figure of MEEF of the present invention;
Fig. 2 is original mask layer figure in present pre-ferred embodiments;
Fig. 3 increases side-play amount a and overall reduction side-play amount b to mask layer entirety in present pre-ferred embodiments;
Fig. 4 is the overall mask layer figure A increasing side-play amount a in present pre-ferred embodiments;
Fig. 5 is the overall mask layer figure B increasing side-play amount b in present pre-ferred embodiments;
Fig. 6 is the simulation silicon slice pattern AA of mask layer figure A in present pre-ferred embodiments;
Fig. 7 is the simulation silicon slice pattern BB of mask layer figure B in present pre-ferred embodiments;
Fig. 8 is difference picture CC in present pre-ferred embodiments;
Fig. 9 is the graph position schematic diagram that in present pre-ferred embodiments, original mask layer figure MEEF is larger;
Figure 10 is a kind of system construction drawing estimating the system of the larger figure of MEEF of the present invention.
Embodiment
Below by way of specific instantiation and accompanying drawings embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by content disclosed in the present specification.The present invention is also implemented by other different instantiation or is applied, and the every details in this instructions also can based on different viewpoints and application, carries out various modification and change not deviating under spirit of the present invention.
Fig. 1 is a kind of flow chart of steps estimating the method for the larger figure of MEEF of the present invention.As shown in Figure 1, a kind of method estimating the larger figure of MEEF of the present invention, comprises the steps:
Step 101, on the basis of original mask layer, increases side-play amount a and overall reduction side-play amount b to original mask layer entirety, obtains overall the mask layer figure A and the mask layer figure B that increase side-play amount a and overall reduction side-play amount b.The scope of side-play amount a and side-play amount b is: be more than or equal to 1 OPC and calculate lattice point, be less than minimum design rule.Suppose that Fig. 2 is original mask layer figure, first side-play amount a and overall reduction side-play amount b is increased to original mask layer entirety, as shown in Figure 3, the overall side-play amount a of increasing and overall mask layer figure A and the mask layer figure B reducing side-play amount b is obtained, as shown in Figure 4 and Figure 5.
Step 102, utilizes OPC model to simulate mask layer figure A and mask layer figure B, obtains simulation silicon slice pattern AA and the simulation silicon slice pattern BB of mask layer figure A and mask layer figure B, as shown in Figure 6 and Figure 7.
Step 103, does logical not operation to simulation silicon slice pattern AA and simulation silicon slice pattern BB, obtains the difference picture CC of mimic diagram AA and mimic diagram BB.Difference picture CC as shown in Figure 8.The width of difference picture CC is that 1 times of light shield CD changes (a+b), the variable quantity of CD on simulation silicon chip.The width of difference picture CC is larger, then illustrate that MEEF is larger, on silicon chip, CD is also larger by the impact of light shield variable quantity.
Step 104, the width of calculated difference figure CC, select the position that difference picture CC width is larger, namely the graph position that original mask layer figure MEEF is larger, as the position irised out in Fig. 8 and Fig. 9, graph position larger for MEEF in Fig. 8 is amplified by Fig. 9, if the figure that MEEF is larger is also DOF (DepthOfFocus simultaneously, depth of focus) less figure, then this type of figure is the figure that lithographic process window is less, as the reference of photoetching process exploitation, also can carry out subsequent authentication as the focus on silicon chip.
Below cooperation Fig. 2 to Fig. 9 is further illustrated the present invention by a specific embodiment: on the basis of original mask layer, suppose that Fig. 2 is original mask layer figure, first side-play amount a (a=0.5nm) and overall reduction side-play amount b (b=0.5nm) are increased to original mask layer entirety, as shown in Figure 3, obtain the overall side-play amount a of increasing and overall mask layer figure A and the mask layer figure B reducing side-play amount b, as shown in Figure 4 and Figure 5.
By OPC model, mask layer figure A and mask layer figure B is simulated again, obtain simulation silicon slice pattern AA and the simulation silicon slice pattern BB of mask layer figure A and mask layer figure B, as shown in Figure 6 and Figure 7.
Then logical not operation is done to simulation silicon slice pattern AA and simulation silicon slice pattern BB, obtain the difference picture CC of mimic diagram AA and mimic diagram BB, as shown in Figure 8.The width of difference picture CC is that 1 times of light shield CD changes a+b=1nm, and on simulation silicon chip, the variable quantity of CD, namely simulates the MEEF obtained.The width of difference picture CC is larger, then illustrate that MEEF is larger, on silicon chip, CD is also larger by the impact of light shield variable quantity.
The width of last calculated difference figure CC, select the position of the larger figure of difference picture CC width, the i.e. position of the larger figure of original mask layer figure MEEF, as the position irised out in Fig. 8 and Fig. 9, Fig. 9 amplifies the position of larger for MEEF in Fig. 8 figure, if the larger figure of MEEF is also the figure that DOF is less simultaneously, then this type of figure is the figure that lithographic process window is less, as the reference of photoetching process exploitation, also can carry out subsequent authentication as the focus on silicon chip.
Figure 10 is a kind of system architecture diagram estimating the system of the larger figure of MEEF of the present invention.As shown in Figure 1, a kind of system estimating the larger figure of MEEF of the present invention, comprising: convergent-divergent module 10, OPC simulate module 11, logical operation module 12 and width calculation module 13.
Wherein, convergent-divergent module 10, on the basis of original mask layer, increases side-play amount a and overall reduction side-play amount b to original mask layer entirety, obtains overall the mask layer figure A and the mask layer figure B that increase side-play amount a and overall reduction side-play amount b; OPC simulates module 11 and utilizes OPC model to simulate mask layer figure A and mask layer figure B, obtains simulation silicon slice pattern AA and the simulation silicon slice pattern BB of mask layer figure A and mask layer figure B; Logical operation module 12 does logical not operation to simulation silicon slice pattern AA and simulation silicon slice pattern BB, obtain the difference picture CC of mimic diagram AA and mimic diagram BB, particularly, the width of difference picture CC is that 1 times of light shield CD changes a+b=1nm, the variable quantity of CD on simulation silicon chip, namely simulate the MEEF obtained, the width of difference picture CC is larger, then illustrate that MEEF is larger, on silicon chip, CD is also larger by the impact of light shield variable quantity; Width calculation module 13, for the width of calculated difference figure CC, selects the position that difference picture CC width is larger, the graph position that namely original mask layer figure MEEF is larger.
In sum, the method and system of the larger figure of a kind of MEEF of estimating of the present invention are when OPC checks, mimic diagram after utilizing OPC model simulation to increase mask layer overall offset amount on silicon chip and the mimic diagram after reducing mask layer overall offset amount on silicon chip, calculate the MEEF of equal value of all mask layer figures, filter out the figure that in all light mask images, MEEF is larger, and determine in conjunction with DOF the figure that lithographic process window is less, effectively prevent in the inspection of conventional silicon wafers focus do not consider some figure due to MEFF larger, may combine with the error of light shield, become the problem of focus new on silicon chip, for follow-up hotspot validates and process optimization provide important evidence, the present invention can as the reference of photoetching process exploitation, also subsequent authentication can be carried out as the focus on silicon chip.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any those skilled in the art all without prejudice under spirit of the present invention and category, can carry out modifying to above-described embodiment and change.Therefore, the scope of the present invention, should listed by claims.
Claims (10)
1. estimate a method for the larger figure of MEEF, comprise the steps:
Step one, on the basis of original mask layer, side-play amount (a) and overall reduction side-play amount (b) are increased to original mask layer entirety, obtains overall the mask layer figure (A) and the mask layer figure (B) that increase side-play amount (a) and overall reduction side-play amount (b);
Step 2, utilize OPC model to simulate this mask layer figure (A) and mask layer figure (B), obtain simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB) of mask layer figure (A) and mask layer figure (B);
Step 3, carries out logical operation to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB), obtains the difference picture (CC) of this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB);
Step 4, calculates the width of this difference picture (CC), selects the position that this difference picture (CC) width is larger.
2. a kind of method estimating the larger figure of MEEF as claimed in claim 1, is characterized in that: in step 3, carries out logical not operation to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB).
3. a kind of method estimating the larger figure of MEEF as claimed in claim 2, is characterized in that: the width of this difference picture (CC) is that 1 times of light shield CD changes, the variable quantity of CD on simulation silicon chip.
4. a kind of method estimating the larger figure of MEEF as claimed in claim 3, is characterized in that: the width of this difference picture (CC) is larger, then illustrate that MEEF is larger, and on silicon chip, CD is subject to the impact of light shield variable quantity larger.
5. a kind of method estimating the larger figure of MEEF as claimed in claim 4, is characterized in that: in step 4, selects the position of 10% maximum figure of this difference picture (CC) width.
6. a kind of method estimating the larger figure of MEEF as claimed in claim 5, is characterized in that: this entirety increases side-play amount a and overall to reduce side-play amount b be 0.5nm.
7. estimate a system for the larger figure of MEEF, comprising:
Convergent-divergent module, on the basis of original mask layer, side-play amount (a) and overall reduction side-play amount (b) are increased to original mask layer entirety, obtains overall the mask layer figure (A) and the mask layer figure (B) that increase side-play amount a and overall reduction side-play amount b;
OPC simulates module, utilize OPC model to simulate this mask layer figure (A) and mask layer figure (B), obtain simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB) of this mask layer figure (A) and mask layer figure (B);
Logical operation module, logical operation is carried out to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB), obtains the difference picture (CC) of this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB);
Width calculation module, for calculating the width of this difference picture (CC), selects the position that this difference picture (CC) width is larger.
8. a kind of system estimating the larger figure of MEEF as claimed in claim 7, is characterized in that: this logical operation module carries out logical not operation to this simulation silicon slice pattern (AA) and simulation silicon slice pattern (BB).
9. a kind of system estimating the larger figure of MEEF as claimed in claim 8, is characterized in that: this width calculation module selects the position of 10% maximum figure of this difference picture (CC) width.
10. a kind of system estimating the larger figure of MEEF as claimed in claim 8, is characterized in that: this entirety increases side-play amount a and overall to reduce side-play amount b be 0.5nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20050164095A1 (en) * | 2003-02-17 | 2005-07-28 | Ken Ozawa | Mask correcting method |
| CN101398859A (en) * | 2007-09-29 | 2009-04-01 | 上海华虹Nec电子有限公司 | Method for introducing light shield partial increment magnification coefficient into optical proximity effect model building |
| CN102043326A (en) * | 2009-10-20 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Mask graph correcting method |
| CN102692812A (en) * | 2011-03-25 | 2012-09-26 | 台湾积体电路制造股份有限公司 | Extreme UV-Light photomask, manufacturing method for the same, and method for patterning base material |
| CN103576444A (en) * | 2012-08-07 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method for mask |
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- 2015-08-13 CN CN201510497384.7A patent/CN105093811B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050164095A1 (en) * | 2003-02-17 | 2005-07-28 | Ken Ozawa | Mask correcting method |
| CN101398859A (en) * | 2007-09-29 | 2009-04-01 | 上海华虹Nec电子有限公司 | Method for introducing light shield partial increment magnification coefficient into optical proximity effect model building |
| CN102043326A (en) * | 2009-10-20 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Mask graph correcting method |
| CN102692812A (en) * | 2011-03-25 | 2012-09-26 | 台湾积体电路制造股份有限公司 | Extreme UV-Light photomask, manufacturing method for the same, and method for patterning base material |
| CN103576444A (en) * | 2012-08-07 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method for mask |
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