CN105084298A - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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Publication number
CN105084298A
CN105084298A CN201410190671.9A CN201410190671A CN105084298A CN 105084298 A CN105084298 A CN 105084298A CN 201410190671 A CN201410190671 A CN 201410190671A CN 105084298 A CN105084298 A CN 105084298A
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Prior art keywords
layer
aluminum pad
semiconductor substrate
cleaning
germanium silicon
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CN201410190671.9A
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CN105084298B (en
Inventor
袁俊
何昭文
郑召星
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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Abstract

The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device comprises the steps of: providing a semiconductor substrate, wherein the semiconductor substrate is provided with an aluminum bonding pad, a passivation layer is formed on the surface of the semiconductor substrate, and the passivation layer has an opening for exposing the aluminum bonding pad; forming a sacrificial layer on a region of the passivation layer where a suspended micro-structure is pre-formed; forming a germanium-silicon layer for covering the sacrificial layer; patterning the germanium-silicon layer and removing the sacrificial layer to form the suspended micro-structure; and carrying out hydrophobic treatment on the aluminum bonding pad. According to the method of enabling the surface of the aluminum bonding pad to be hydrophobic, corrosion from hydrofluoric acid to the aluminum bonding pad is prevented efficiently, and the performance and the yield rate of the device are further improved.

Description

A kind of preparation method of semiconductor devices
Technical field
The present invention relates to semiconductor fabrication process, particularly relate to a kind of preparation method of semiconductor devices.
Background technology
The technological challenge integrating CMOS (CMOS) and MEMS (MEMS) circuit in single-chip broken through by CMOSMEMS device, progressively breaking quartz crystal in the complete monopoly situation of FREQUENCY CONTROL with timing product scope, compared with the method for any other integrated MEMS, CMOSMEMS technology directly can carry out the modularization post processing of MEMS on cmos circuit, and this is unique.Such as, but the making of CMOSMEMS device still faces a lot of problem, in CMOSMEMS dispose procedure, aluminum pad is easily by problem that hydrofluoric acid corrodes.
The preparation method of prior art CMOSMEMS comprises: step one, provide Semiconductor substrate, described Semiconductor substrate is formed with aluminum pad, be formed with cmos device in Semiconductor substrate, described semiconductor substrate surface is formed with passivation layer, and described passivation layer has the opening exposing described aluminum pad; The passivation layer of described Semiconductor substrate is formed sacrifice layer germanium layer and germanium silicon layer.Step 2, removal germanium layer, discharge CMOSMEMS; Step 3, employing HF solution, remove the particle below germanium silicon layer, and make germanium silicon surface become hydrophobic surface, but in this step, because hydrofluoric acid has corrosiveness to Al pad, what its surface was become is coarse, and then can affect the electrical property of device.
Therefore, in order to solve the problems of the technologies described above, be necessary to propose a kind of new method.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
In order to solve problems of the prior art, the present invention proposes a kind of preparation method of semiconductor devices, comprising the following steps:
There is provided Semiconductor substrate, described Semiconductor substrate is formed with aluminum pad, described semiconductor substrate surface is formed with passivation layer, and described passivation layer has the opening exposing described aluminum pad;
The region of the pre-formed free standing structure of described passivation layer forms sacrifice layer;
Form the germanium silicon layer covering described sacrifice layer;
Germanium silicon layer described in patterning also removes described sacrifice layer to form described free standing structure;
Hydrophobization process is carried out to described aluminum pad.
Alternatively, described hydrophobization process comprises and adopts the hexane solution of stearic hexane solution and dicyclohexylcarbodiimide to carry out hydrophobization process to described aluminum pad successively.
Alternatively, before described hydrophobization process, pretreated step is also comprised.
Alternatively, described pretreatment comprises employing HNO 3/ H 2o 2described aluminum pad is processed.
Alternatively, the step that described aluminum pad is cleaned also is comprised before described pretreatment.
Alternatively, described cleaning adopts the cleaning way of ultrasonic wave vibration.
Alternatively, described ultrasonic wave vibration is carried out in ethanolic solution.
Alternatively, carry out described hydrophobization process after also comprise the step of carrying out drying.
Alternatively, perform described hydrophobization process after also comprise the step that described germanium silicon layer is cleaned.
Alternatively, hydrofluoric acid is adopted to carry out described cleaning.
Alternatively, described germanium silicon surface hydrophobization is made after performing described cleaning.
Alternatively, described sacrifice layer is germanium layer.
To sum up, according to the method by making aluminum pad surface-hydrophobicized of the present invention, effectively prevent hydrofluoric acid to the corrosion of aluminum pad, and then improve performance and the yield of device.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.
In accompanying drawing:
Figure 1A-1B implements the generalized section of obtained device successively for exemplary embodiment of the present;
Fig. 2 is the flow chart of step implemented successively of method according to an exemplary embodiment of the present invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed step is proposed, to explain the manufacturing process of the present invention of the present invention's proposition.Obviously, the specific details that the technical staff that execution of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Should be understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
[exemplary embodiment]
Below in conjunction with accompanying drawing, the present invention is described in more detail, wherein denotes the preferred embodiments of the present invention, should be appreciated that those skilled in the art can modify the present invention described here, and still realize advantageous effects of the present invention.
First, with reference to shown in Figure 1A, perform step 201, provide Semiconductor substrate 100, Semiconductor substrate is formed with aluminum pad 101, semiconductor substrate surface is formed with passivation layer 102, and passivation layer 102 has the opening exposing described aluminum pad.
Semiconductor substrate 100 can be at least one in following mentioned material: SiGe (SGOI) etc. on Si, SiGe, SiC, SiGeC, silicon-on-insulator (SOI) or insulator.Be formed with cmos device in Semiconductor substrate, cmos device is such as transistor (such as, NMOS and/or PMOS) etc.Can also form isolation structure in the semiconductor substrate, described isolation structure is that shallow trench isolation is from (STI) structure or selective oxidation silicon (LOCOS) isolation structure.In addition, described Semiconductor substrate 100 is formed with aluminum pad 101.
Described passivation layer 102 is silicon oxide layer, silicon nitride layer or phosphorosilicate glass layer etc.Passivation layer has the opening exposing described aluminum pad.
Perform step 202, the region of the pre-formed free standing structure of described passivation layer forms sacrifice layer; Form the germanium silicon layer covering described sacrifice layer.
Described sacrificial layer material comprises germanium, porous silicon, silica, photoresist and polyimides etc.In one example, sacrifice layer is preferably germanium layer.
Forming the method for germanium silicon layer, can be Low Pressure Chemical Vapor Deposition (LPCVD) or other suitable methods.Alternatively, the method forming germanium silicon layer is Low Pressure Chemical Vapor Deposition, forms germanium silicon layer by the mode of thermal decomposition.Wherein, the temperature of technique controls at 450 ~ 800 DEG C, and Stress control is in 1 ~ 100 holder (Torr).Further, reacting gas comprises SiH 4(or Si 2h 6) and GeH 4.
Perform step 203, germanium silicon layer described in patterning also removes described sacrifice layer to form described free standing structure.
Germanium silicon layer described in patterning, namely according to the figure of pre-formed free standing structure, etches described germanium silicon layer, such as, by dry method or wet etching germanium silicon layer.As shown in Figure 1A, after germanium silicon layer etching, sacrifice layer 103 forms the germanium silicon layer 104 consistent with free standing structure figure.
As shown in Figure 1B, remove described sacrifice layer 103, release CMOSMEMES device, forms free standing structure 104.General employing oxidizing acid solution etches sacrifice layer, such as, adopt hydrogen peroxide to carry out selective etch to sacrifice layer.Described free standing structure can be used as mobilizable micro-structural or unsettled micro-structural, the such as element such as resonator, cantilever beam of MEMS.
Then, perform step 204, aluminum pad is cleaned.
The aluminum pad of exposure is placed in ethanolic solution and carries out sonic oscillation cleaning, to remove the pollutant etc. that aluminum pad surface exists.
Then, perform step 205, pretreatment is carried out to aluminum pad.
At room temperature, aluminum pad is immersed in HNO 3/ H 2o 2in mixed liquor, chemical etching is carried out to it and obtains rough surface.
Then, perform step 206, hydrophobization process is carried out to aluminum pad, dries afterwards.
Pretreated aluminum pad is immersed in respectively in the hexane solution containing stearic acid and carbodicyclo hexylimide (DCCI), dries after 24h, just make aluminum pad create hydrophobic surface.After treatment, there is micron and nanoscale structures in aluminum pad surface, can catch a large amount of air, makes its surface form a layer of air hydrophobic layer, strengthen hydrophobic properties of the surface.Not only in pure water, and there is hydrophobic performance on this surface at etchant solution such as acid, alkali and salting liquid, and the hydrophobic properties of the surface made are stablized, and the time is long, also has good repellence to etchant solution.
Then, perform step 207, germanium silicon layer is cleaned.
Perform after removing sacrifice layer process step, because the germanium silicon surface contacted with sacrifice layer still exists some particle residue things, therefore need clean germanium silicon layer, to remove particle residue thing.As an example, the present invention adopts hydrofluoric acid to clean germanium silicon layer, also can make germanium silicon surface hydrophobization after cleaning.Due to after step 206, aluminum pad is provided with hydrophobic surface, and hydrophobic surface still works in acid, therefore when effectively can avoid this step, hydrofluoric acid is to the corrosion of aluminum pad.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.

Claims (12)

1. a preparation method for semiconductor devices, comprising:
There is provided Semiconductor substrate, described Semiconductor substrate is formed with aluminum pad, described semiconductor substrate surface is formed with passivation layer, and described passivation layer has the opening exposing described aluminum pad;
The region of the pre-formed free standing structure of described passivation layer forms sacrifice layer;
Form the germanium silicon layer covering described sacrifice layer;
Germanium silicon layer described in patterning also removes described sacrifice layer to form described free standing structure;
Hydrophobization process is carried out to described aluminum pad.
2. the method for claim 1, is characterized in that, described hydrophobization process comprises and adopts the hexane solution of stearic hexane solution and dicyclohexylcarbodiimide to carry out hydrophobization process to described aluminum pad successively.
3. the method for claim 1, is characterized in that, before described hydrophobization process, also comprise pretreated step.
4. method as claimed in claim 3, is characterized in that, described pretreatment comprises employing HNO 3/ H 2o 2described aluminum pad is processed.
5. method as claimed in claim 3, is characterized in that, also comprise the step of cleaning described aluminum pad before described pretreatment.
6. method as claimed in claim 5, is characterized in that, described cleaning adopts the cleaning way of ultrasonic wave vibration.
7. method as claimed in claim 6, is characterized in that, described ultrasonic wave vibration is carried out in ethanolic solution.
8. the method for claim 1, is characterized in that, also comprises the step of carrying out drying after carrying out described hydrophobization process.
9. the method for claim 1, is characterized in that, also comprises the step of cleaning described germanium silicon layer after performing described hydrophobization process.
10. method as claimed in claim 9, is characterized in that, adopts hydrofluoric acid to carry out described cleaning.
11. methods as claimed in claim 10, is characterized in that, make described germanium silicon surface hydrophobization after performing described cleaning.
12. the method for claim 1, is characterized in that, described sacrifice layer is germanium layer.
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