CN105084292A - Vacuum packaging structure and vacuum packaging method of MEMS device - Google Patents
Vacuum packaging structure and vacuum packaging method of MEMS device Download PDFInfo
- Publication number
- CN105084292A CN105084292A CN201410201623.5A CN201410201623A CN105084292A CN 105084292 A CN105084292 A CN 105084292A CN 201410201623 A CN201410201623 A CN 201410201623A CN 105084292 A CN105084292 A CN 105084292A
- Authority
- CN
- China
- Prior art keywords
- mems
- layer
- gas barrier
- vacuum
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Micromachines (AREA)
Abstract
The invention provides a vacuum packaging structure and a vacuum packaging method of an MEMS device. The vacuum packaging structure of the MEMS device comprises a substrate; the MEMS device located on the substrate; a sealing cover, wherein the sealing cover is bonded with the substrate to vacuum package the MEMS device between the substrate and the sealing cover; and the substrate comprises at least one gas barrier layer, which is used for blocking escapable gas generated by the substrate in a process before vacuum packaging. According to the vacuum packaging structure in the technical scheme provided by the application, unbeneficial influence of the escapable gas generated by the substrate where the MEMS device is located in the process before vacuum packaging on the vacuum environment where the MEMS device is located can be reduced.
Description
Technical field
The application relates to MEMS (MEMS, Micro-Electro-MechanicalSystems) technical field, more specifically, relates to a kind of vacuum encapsulation structure and vacuum packaging method of MEMS.
Background technology
MEMS (calling MEMS in the following text) is a kind of micro electro mechanical device or device of comprising the micromechanics essential parts such as microsensor, microactrator, micro-energy and high performance electronics integrated circuit, is a kind of acquisition, process information and the mechanically operated integrated device of execution.
The vacuum sealing technique of MEMS is the important content that current MEMS studies.The characteristic size of MEMS is small, generally in micron dimension, is easily subject to the impact of extraneous environmental noise, or is subject to staining of moisture in air, dust, so that the hydraulic performance decline of MEMS, even loses efficacy time serious.Such as, for some MEMS product, resonator, microthrust test etc., Vacuum Package can significantly improve the quality factor (Q-factor) of device and sensitivity, reduces the impact of ambient noise, increase substantially the overall performance of MEMS.Such as, the quality factor of MEMS resonator under atmospheric environment is about 20 ~ 400, but when it is operated in the vacuum environment of 7.5 × 10-8, its quality factor can up to 50000.
The Vacuum Package of MEMS can be divided into device level to encapsulate and wafer level packaging.Device level encapsulation technology relative maturity, adopts ceramic package or metal shell to encapsulate individual devices usually, but encapsulation process relative complex, expend time in length, and packaging cost accounts for the large percentage of whole device cost.Therefore, the development trend of the vacuum sealing technique of current MEMS turns to simple, the lower-cost wafer-level vacuum package technology of technique gradually, mainly comprises silicon silicon melting bonding, positive level bonding, gold silicon eutectic bonding etc.
Although adopt and the Wafer-Level Packaging Technology of the wafer as capping together with the wafer bonding being provided with MEMS with a cavity can be formed a vacuum environment.But, because these bonded interface place defectiveness and hole cause Leakage Gas, the gas molecule of chamber wall material absorption resolves venting in bonding process, and the low vacuum of the micropore permeation Deng Douhuishi bonding rear chamber of bonding material itself is in the vacuum needed for normal work, the method improving the vacuum of the vacuum environment of MEMS in prior art is the exhaust of reserved air vent, or as the wafer of capping is arranged absorption can the getter of emergent gas as Titanium (Ti), metal zirconium (Zr), zirconium alloy or nanoscale getter etc., when bonding, activated degasser absorbs foreign gas.
Fig. 1 and Fig. 2 is a kind of MEMS of the prior art---the structural representation of the vacuum encapsulation structure of MEMS resonator.As shown in Figure 1, in this MEMS, comprise first wafer 100 ' at MEMS place and the second wafer 200 ' as capping.
The MEMS 120 ' that first wafer 100 ' comprises matrix 110 ' and is arranged on matrix 110 ', in this example, MEMS 120 ' is MEMS resonator.Matrix 110 ' has multiple layer, illustrate only the first insulating barrier 119 ' being positioned at the superiors in FIG.Be provided with the first metal layer 130 ' in the surrounding of MEMS 120 ', the first metal layer 130 ' is aluminum metal layer in this example.In addition, also metal lead wire 140 ' is provided with in the periphery of the first metal layer 130 '.
Fig. 2 shows the structural representation of the matrix 110 ' of the example in Fig. 1.Matrix 110 ' comprises multiple layer, the structure sheaf being wherein positioned at the bottom is substrate layer 111 ', be positioned at the structure sheaf of most top layer is the first insulating barrier 119 ', also multiple layer is comprised between substrate layer 111 ' and the first insulating barrier 119 ', in this example, different structure sheafs is represented with 112 ', 113 ', 114 ' and 115 '.
Second wafer 200 ' comprises lid main body 210 ', the lid main body 210 ' side relative with the first wafer 100 ' has groove type structure, lid main body 210 ' is upper is provided with bulge loop accordingly with the first metal layer 130 ' on the first wafer 100 ', and bulge loop surrounds aforementioned grooves shape structure.The surface of the side relative with the first wafer 100 ' of lid main body 210 ' except bulge loop is coated with layer of titanium metal 220 ' as getter, and on bulge loop, set gradually the second insulating barrier 230 ' and the second metal level 240 ', the second metal level 240 ' is germanium metal (Ge) in this example.The first metal layer 130 ' and the second metal level 240 ' mutually merge and form fused layer B ' after eutectic bonding (Eutecticbonding).
In the process realizing the application, inventor finds that above prior art at least exists following problem: adopt separately getter to absorb the mode of gas, owing to being subject to the restriction of getter self-characteristic, foreign gas can not be absorbed in time, fully when the environment residing for MEMS changes.
Fig. 3 to utilize in the vacuum environment of the MEMS of the prior art shown in residual gas analyzer (RGA, ResidualGasAnalyzer) analysis chart 1 and Fig. 2 several representative gases with the situation of change of its concentration of change of environment.In figure 3, abscissa represents time T, and ordinate represents gas concentration C.T1 represents the initial time heated MEMS, and T2 represents the finish-time of heating MEMS.In Fig. 3, curve 1 represents N
2concentration curve, curve 2 represents H
2concentration curve, curve 3 represents the concentration curve of Ar, and curve 4 represents the concentration curve of F.
As shown in Figure 3, within initial a period of time of MEMS heating, the concentration of several gas has raising by a relatively large margin, and through after a period of time due to getter generation effect, the concentration of each gas falls after rise again gradually to some extent.Therefore, in above MEMS of the prior art, vacuum can worsen to some extent along with the change of environment (raising as temperature), though be provided with getter can not in time, effectively control this deterioration if having time.
Through in depth to analyze and study, inventor finds that the reason that the concentration of above various gas changes is further: in above MEMS, the multiple layer of the first insulating barrier below 119 ' is due to reasons such as manufacturing process, can produce in matrix 110 ' can emergent gas (outgassing), when environmental condition changes (when such as temperature raises), these can be overflowed from matrix 110 ' inside by emergent gas, enter in the vacuum environment residing for MEMS, thus reduce the vacuum of the vacuum environment at MEMS place, affect the quality factor of MEMS.
Summary of the invention
The application's object is the vacuum encapsulation structure and the vacuum packaging method that provide a kind of MEMS, be intended to reduce in the wafer technique before encapsulation at MEMS place result from the intrinsic silicon of wafer can the release of emergent gas to the adverse effect of the vacuum of the vacuum environment residing for MEMS.
The first aspect of the application provides a kind of vacuum encapsulation structure of MEMS, and the vacuum encapsulation structure of MEMS comprises: matrix; MEMS, is positioned on matrix; Capping, capping and matrix bonding with by MEMS Vacuum Package between matrix and capping; Matrix comprises at least one deck gas barrier layer, for stop produce in the technique of matrix before Vacuum Package can emergent gas.
Further, gas barrier layer is formed by dielectric material.
Further, gas barrier layer is by Al
2o
3, Ti, TiN, Cr or Au formed.
Further, gas barrier layer is formed by atom layer deposition process.
Further, matrix comprises substrate layer and the multiple layer between substrate layer and MEMS, wherein, at least one deck gas barrier layer between MEMS and multiple layer or between the double-layer structure layer that at least one deck gas barrier layer is adjacent in multiple layer.
Further, time between the double-layer structure layer that at least one deck gas barrier layer is adjacent in multiple layer, multiple layer comprises first insulating barrier adjacent with MEMS.
Further, at least one deck gas barrier layer and the first insulating barrier adjoin.
Further, MEMS is MEMS resonator, sensor or oscillator.
The second aspect of the application also provides a kind of vacuum packaging method of MEMS, the vacuum packaging method of MEMS comprises: make matrix, matrix comprises at least one deck gas barrier layer, for stop produce in the technique of matrix before Vacuum Package can emergent gas; Matrix arranges MEMS; Capping is provided; By matrix and capping bonding with by MEMS Vacuum Package between matrix and capping.
Further, gas barrier layer is formed with dielectric material.
Further, gas barrier layer is formed with Al2O3, Ti, TiN, Cr or Au.
Further, gas barrier layer is formed by atom layer deposition process.
Further, the step making matrix comprises: provide substrate layer; Multiple layer and at least one deck gas barrier layer is formed successively on substrate layer; MEMS is formed at least one deck gas barrier layer.
Further, the step making matrix comprises: provide substrate layer; Substrate layer forms multiple layer and at least one deck gas barrier layer, wherein, between the double-layer structure layer that at least one deck gas barrier layer is adjacent in multiple layer; Multiple layer forms MEMS.
Further, the step making matrix comprises: provide substrate layer; Substrate layer is formed multiple layer and at least one deck gas barrier layer, and makes between double-layer structure layer that at least one deck gas barrier layer is adjacent in multiple layer, wherein in multiple layer, outermost structure sheaf is the first insulating barrier; First insulating barrier forms MEMS.
Further, at least one deck gas barrier layer and the first insulating barrier is made to adjoin.
Further, MEMS is MEMS resonator, sensor or oscillator.
According to vacuum encapsulation structure and the vacuum packaging method of the MEMS of the application, due to matrix comprise at least one deck be set to stop produce in the technique of matrix before Vacuum Package can the gas barrier layer of emergent gas, can can be stopped by gas barrier layer after Vacuum Package by emergent gas, when environment residing for MEMS changes, can prevent from can entering in the vacuum environment of MEMS by emergent gas accordingly, thus result from the wafer that can reduce MEMS place technique before encapsulation in matrix can the release of emergent gas to the adverse effect of the vacuum of the vacuum environment residing for MEMS.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 is the structural representation of the vacuum encapsulation structure of MEMS in prior art;
Fig. 2 is the structural representation of each structure sheaf of the first wafer in the vacuum encapsulation structure of the MEMS of the prior art shown in Fig. 1;
Fig. 3 to utilize in the vacuum environment of the vacuum encapsulation structure of the MEMS of the prior art shown in residual gas analyzer analysis chart 1 several representative gases with the situation of change schematic diagram of the change gas concentration of environment;
Fig. 4 is the structural representation of the vacuum encapsulation structure of the MEMS of the application's preferred embodiment;
Fig. 5 is the structural representation of each structure sheaf of the first wafer in the vacuum encapsulation structure of the MEMS of the preferred embodiment shown in Fig. 4;
Fig. 6 to utilize in the vacuum environment of the vacuum encapsulation structure of the MEMS of the preferred embodiment shown in residual gas analyzer analysis chart 4 several representative gases with the situation of change schematic diagram of the change gas concentration of environment.
Detailed description of the invention
Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
It should be noted that used term is only to describe detailed description of the invention here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
Introduce as background technology, prior art also exists the reason of the multiple layer in MEMS in matrix due to manufacturing process, can produce matrix 110 in can emergent gas, thus when the environmental change of MEMS the technical problem of the vacuum of the vacuum environment at reduction MEMS place.For solving this technical problem, present applicant proposes a kind of vacuum encapsulation structure of MEMS.
As shown in Figure 4, the vacuum encapsulation structure of the MEMS of the application comprises matrix 110, MEMS 120 and capping 200.MEMS 120 is positioned on matrix 110.Capping 200 and matrix 110 bonding with by MEMS 120 Vacuum Package between matrix 110 and capping 200.Wherein, matrix 110 comprises at least one deck gas barrier layer 117, for stop produce in the technique of matrix 110 before Vacuum Package can emergent gas.
According to vacuum encapsulation structure and the vacuum packaging method of the MEMS of the application, because matrix 110 comprises at least one deck gas barrier layer 117, gas barrier layer 117 be set to stop in the technique of matrix 110 before Vacuum Package result from matrix 110 can emergent gas.Therefore, can can be stopped by gas barrier layer by emergent gas in matrix 110, when the environment residing for MEMS changes, can prevent from can entering in the vacuum environment of MEMS by emergent gas accordingly, thus can reduce aforementioned can the release of emergent gas to the adverse effect of the vacuum of the vacuum environment residing for MEMS.
Fig. 4 and Fig. 5 is the MEMS of a preferred embodiment of the invention---the vacuum encapsulation structure of MEMS resonator.In the present embodiment only for wafer level packaging illustrate the employing gas barrier layer of the application be blocked in Vacuum Package before technique in produce can the thought of emergent gas, but the application is not limited to wafer level packaging, is also applicable to device level encapsulation.
As shown in Figure 4, in this MEMS, comprise first wafer 100 at MEMS place and the second wafer 200 as capping.
The MEMS 120 that first wafer 100 comprises matrix 110 and is arranged on matrix 110.In this preferred embodiment, MEMS 120 is resonator.Matrix 110 has multiple layer, illustrate only the first insulating barrier 119 of being positioned at the superiors in the diagram and is positioned at the first insulating barrier 119 times and one deck gas barrier layer 117 adjacent with the first insulating barrier 119.Be provided with the first metal layer 130 in the surrounding of MEMS 120, the first metal layer 130 adopts aluminum metal layer in the present embodiment.In addition, aluminium lead wire 140 is also provided with in the periphery of the first metal layer 130.
Fig. 5 shows the structural representation of the matrix 110 of the vacuum encapsulation structure of the MEMS in Fig. 4.Matrix 110 comprises multiple layer.Wherein the structure sheaf of the bottom is substrate layer 111, the structure sheaf of most top layer is the first insulating barrier 119, also multiple layer is comprised between substrate layer 111 and the first insulating barrier 119, in this example, different structure sheafs is represented with 112,113,114 and 115 respectively.Structure sheaf number, and the materials and structures etc. of every Rotating fields layer specifically can be arranged according to the needs of MEMS, and such as, as required, structure sheaf can be set to metal level, SiON layer, SiO
2layer or SiN layer etc.Such as in the present embodiment, substrate layer 111 is layer-of-substrate silicon; First insulating barrier 119 is SiO
2layer or ethyl orthosilicate (TEOS, tetraethylorthosilicate) layer.
Second wafer 200 comprises lid main body 210, and lid main body 210 side relative with the first wafer 100 has groove type structure.Lid main body 210 is provided with bulge loop accordingly with the first metal layer 130 on the first wafer 100, and bulge loop defines aforesaid groove type structure.The surface of the side relative with the first wafer 100 of lid main body 210 except bulge loop is coated with layer of titanium metal 220 as getter, and on bulge loop, sets gradually the second insulating barrier 230 and the second metal level 240.Second insulating barrier 230 is SiO in the preferred embodiment
2layer, the second metal level 240 is germanium metal (Ge).The first metal layer 130 and the second metal level 240 mutually merge and form fused layer B after eutectic bonding.
Gas barrier layer 117 is preferably formed by dielectric material.As can by Al
2o
3formed.But also can be formed by materials such as Ti, TiN, Cr or Au.In addition preferably, gas barrier layer 117 is formed by ald (ALD, Atomiclayerdeposition) technique.
In the present embodiment, namely use the Al of ALD technique
2o
3form gas barrier layer 117.The Al that atom layer deposition process is formed
2o
3layer is a kind of well insulating materials, the more important thing is the Al of ALD technique
2o
3there is fine and close characteristic, therefore can as the gas barrier layer 117 added in the front procedure of the first wafer 100, with stop produce in the technique of matrix 110 before Vacuum Package can emergent gas.
In the embodiment above, in matrix 110, one deck is only provided with below the first insulating barrier 119 and the gas barrier layer 117 adjacent with the first insulating barrier 119.In other unshowned embodiment, matrix 110 comprises away from the substrate layer 111 of MEMS 120 and the multiple layer between substrate layer 111 and MEMS 120, matrix 110 can comprise multilayer gas barrier layer, wherein, at least one deck gas barrier layer 117 can between MEMS 120 and aforenoted multi-layer structure sheaf, or between the double-layer structure layer that at least one deck gas barrier layer 117 is adjacent in multiple layer.
Fig. 6 to utilize in the vacuum environment of the MEMS of the preferred embodiment shown in residual gas analyzer analysis chart 4 and Fig. 5 several representative gases with the situation of change of its concentration of change of environment.In figure 6, abscissa represents time T, and ordinate represents gas concentration C.T3 represents the initial time heated MEMS, and T4 represents the finish-time of heating MEMS.Curve 1 represents N
2concentration curve, curve 2 represents H
2concentration curve, curve 3 represents the concentration curve of Ar, and curve 4 represents the concentration curve of F.Visible, within the whole period that the MEMS of above preferred embodiment heats, the change of the concentration of several gas is very small all the time.Visible, be provided with by the Al of ALD technique
2o
3after the gas barrier layer 117 formed, reduce in the front layer process of the matrix 110 of first wafer 100 at MEMS place because of result from matrix 110 can emergent gas on the impact of the vacuum of the vacuum environment at MEMS place, thus, the quality factor of MEMS can be improved.It should be noted that, in Fig. 6, only have chosen several gases that relative concentration is higher, in fact, gas barrier layer 117 to can remaining gas in emergent gas as CO
2, Cl
2deng also having good inhibitory action.
MEMS 120 in above embodiment is MEMS resonator.But the thought of the application can also be used for the vacuum encapsulation structure of other MEMS such as sensor or oscillator.In addition, in above embodiment, be the wafer-level vacuum package technology that have employed metal eutectic bonding, but in other unshowned embodiment, also may be used for the vacuum sealing technique of other kinds such as silicon silicon melting bonding, positive level bonding, gold silicon eutectic bonding.
The application also provides a kind of vacuum packaging method of MEMS, and the vacuum packaging method of MEMS comprises: provide substrate layer 111; Multiple layer and at least one deck gas barrier layer is formed successively on substrate layer; MEMS is formed at least one deck gas barrier layer 117.
In the vacuum packaging method example of concrete MEMS, this vacuum packaging method comprises:
Step S10: prepare the first wafer 100.Step S10 comprises sub-step S11 and sub-step S13, makes matrix 110 in sub-step S11, in sub-step S13, matrix 110 on MEMS 120 is set.
In sub-step S11, substrate layer 111 is provided, substrate layer 111 is formed multiple layer and at least one deck gas barrier layer 117, thus make matrix 110 comprise at least one deck gas barrier layer 117, gas barrier layer 117 be set to stop produce in the technique of matrix 110 before Vacuum Package can emergent gas.Preferably, in sub-step S11, Al can be used
2o
3, the material such as Ti, TiN, Cr or Au forms gas barrier layer 117.In addition preferably, gas barrier layer 117 is formed by atom layer deposition process.
Preferably, sub-step S11 comprises: on substrate layer 111, form multiple layer and make at least one gas barrier layer 117 be positioned on multiple layer, MEMS is formed at least one gas barrier layer 117, or on substrate layer 111, form multiple layer and make between double-layer structure layer that at least one deck gas barrier layer 117 is adjacent in multiple layer, and in multiple layer, outermost structure sheaf forming MEMS 120.More preferably, sub-step S11 comprises: on substrate layer 111, form multiple layer and between the double-layer structure layer making at least one gas barrier layer 117 adjacent in multiple structure sheaf, wherein in multiple layer, outermost structure sheaf is the first insulating barrier 119, and forms MEMS 120 on the first insulating barrier 119.A gas barrier layer 117 adjoined with the first insulating barrier 119 is preferably set.
The surrounding being also included in MEMS 120 in step S10 arranges the sub-step S15 of the first metal layer 130 and arranges the sub-step S17 of metal lead wire 140 in the periphery of the first metal layer 130.
Step S30: capping is provided.Preferably using the second wafer 200 as capping.Step S30 comprises the sub-step S31 forming lid main body 210, and lid main body 210 side relative with the first wafer 100 has groove type structure, and lid main body 210 is provided with the first metal layer 130 on the first wafer 100 bulge loop surrounding groove type structure accordingly; The surface of the side relative with the first wafer 100 that step S30 is included in lid main body 210 except bulge loop is coated with the sub-step S33 of layer of titanium metal 220; And be included in sub-step S37 bulge loop being arranged the second insulating barrier 230 and sub-step S37 that the second metal level 240 is set on the second insulating barrier 230.
Step S50: make matrix 110 and capping 200 bonding with by MEMS 120 Vacuum Package between matrix 110 and capping 200.
The above embodiment of the application utilizes Al
2o
3etc. having in vacuum encapsulation structure and vacuum packaging method that bubble-tight dielectric material is applied in MEMS as gas barrier layer, before can effectively stopping MEMS Vacuum Package matrix 110 processing technology in produce can emergent gas, thus improve the vacuum of the vacuum environment of MEMS.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection domain that all should be included in the application.
Claims (17)
1. a vacuum encapsulation structure for MEMS, comprising:
Matrix;
MEMS, is positioned on described matrix;
Capping, described capping and described matrix bonding with by described MEMS Vacuum Package between described matrix and described capping;
It is characterized in that,
Described matrix comprises at least one deck gas barrier layer, for stop produce in the technique of described matrix before Vacuum Package can emergent gas.
2. the vacuum encapsulation structure of MEMS according to claim 1, is characterized in that, described gas barrier layer is formed by dielectric material.
3. the vacuum encapsulation structure of MEMS according to claim 1, is characterized in that, described gas barrier layer is by Al
2o
3, Ti, TiN, Cr or Au formed.
4. the vacuum encapsulation structure of MEMS according to claim 1, is characterized in that, described gas barrier layer is formed by atom layer deposition process.
5. the vacuum encapsulation structure of MEMS according to claim 1, it is characterized in that, described matrix comprises substrate layer and the multiple layer between described substrate layer and described MEMS, wherein, at least gas barrier layer described in one deck between described MEMS and described multiple layer or between the double-layer structure layer that at least gas barrier layer described in one deck is adjacent in described multiple layer.
6. the vacuum encapsulation structure of MEMS according to claim 5, it is characterized in that, time between the double-layer structure layer that at least gas barrier layer described in one deck is adjacent in described multiple layer, described multiple layer comprises first insulating barrier adjacent with described MEMS.
7. the vacuum encapsulation structure of MEMS according to claim 6, is characterized in that, at least gas barrier layer described in one deck and described first insulating barrier adjoin.
8. the vacuum encapsulation structure of MEMS according to any one of claim 1 to 7, is characterized in that, described MEMS is MEMS resonator, sensor or oscillator.
9. a vacuum packaging method for MEMS, is characterized in that, comprising:
Make matrix, described matrix comprises at least one deck gas barrier layer, for stop produce in the technique of described matrix before Vacuum Package can emergent gas;
Matrix makes MEMS;
Capping is provided;
By described capping and matrix bonding with by described MEMS Vacuum Package between described matrix and described capping.
10. the vacuum packaging method of MEMS according to claim 9, is characterized in that, forms described gas barrier layer with dielectric material.
The vacuum packaging method of 11. MEMS according to claim 9, is characterized in that, use Al
2o
3, Ti, TiN, Cr or Au form described gas barrier layer.
The vacuum packaging method of 12. MEMS according to claim 9, is characterized in that, forms described gas barrier layer by atom layer deposition process.
The vacuum packaging method of 13. MEMS according to claim 9, is characterized in that, the step making matrix comprises:
Substrate layer is provided;
Multiple layer and at least one deck gas barrier layer is formed successively on substrate layer;
Described MEMS is formed on described at least one deck gas barrier layer.
The vacuum packaging method of 14. MEMS according to claim 9, is characterized in that, the step making matrix comprises:
Substrate layer is provided;
Substrate layer forms multiple structure sheaf and at least one deck gas barrier layer, wherein, between the double-layer structure layer that at least gas barrier layer described in one deck is adjacent in described multiple structure sheaf;
Described multiple structure sheaf forms described MEMS.
The vacuum packaging method of 15. MEMS according to claim 9, is characterized in that, the step of described making matrix comprises:
Substrate layer is provided;
Described substrate layer is formed multiple layer and at least one deck gas barrier layer, and makes between double-layer structure layer that at least gas barrier layer described in one deck is adjacent in described multiple layer, wherein in multiple layer, outermost structure sheaf is the first insulating barrier;
Described first insulating barrier forms described MEMS.
The vacuum packaging method of 16. MEMS according to claim 15, is characterized in that, at least gas barrier layer described in one deck and described first insulating barrier are adjoined.
The vacuum packaging method of 17. MEMS according to any one of claim 9 to 16, it is characterized in that, described MEMS is MEMS resonator, sensor or oscillator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410201623.5A CN105084292A (en) | 2014-05-13 | 2014-05-13 | Vacuum packaging structure and vacuum packaging method of MEMS device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410201623.5A CN105084292A (en) | 2014-05-13 | 2014-05-13 | Vacuum packaging structure and vacuum packaging method of MEMS device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105084292A true CN105084292A (en) | 2015-11-25 |
Family
ID=54565753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410201623.5A Pending CN105084292A (en) | 2014-05-13 | 2014-05-13 | Vacuum packaging structure and vacuum packaging method of MEMS device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105084292A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107851618A (en) * | 2015-10-20 | 2018-03-27 | 雷神公司 | Encapsulation pressure is reduced using external air suction agent |
| CN111422822A (en) * | 2020-04-03 | 2020-07-17 | 苏州研材微纳科技有限公司 | Preparation process of nano forest getter |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040126953A1 (en) * | 2002-10-23 | 2004-07-01 | Cheung Kin P. | Processes for hermetically packaging wafer level microscopic structures |
| US20040140557A1 (en) * | 2003-01-21 | 2004-07-22 | United Test & Assembly Center Limited | Wl-bga for MEMS/MOEMS devices |
| CN1578911A (en) * | 2001-10-29 | 2005-02-09 | 奥地利微系统股份公司 | Micro-sensor |
| US20070099395A1 (en) * | 2005-11-03 | 2007-05-03 | Uppili Sridhar | Wafer level packaging process |
| US7579663B2 (en) * | 2002-08-07 | 2009-08-25 | Chang-Feng Wan | Hermetic packaging and method of manufacture and use therefore |
| CN103253625A (en) * | 2012-02-17 | 2013-08-21 | 台湾积体电路制造股份有限公司 | Micro-electro mechanical systems (mems) structures and methods of forming the same |
-
2014
- 2014-05-13 CN CN201410201623.5A patent/CN105084292A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1578911A (en) * | 2001-10-29 | 2005-02-09 | 奥地利微系统股份公司 | Micro-sensor |
| US7579663B2 (en) * | 2002-08-07 | 2009-08-25 | Chang-Feng Wan | Hermetic packaging and method of manufacture and use therefore |
| US20040126953A1 (en) * | 2002-10-23 | 2004-07-01 | Cheung Kin P. | Processes for hermetically packaging wafer level microscopic structures |
| US20040140557A1 (en) * | 2003-01-21 | 2004-07-22 | United Test & Assembly Center Limited | Wl-bga for MEMS/MOEMS devices |
| US20070099395A1 (en) * | 2005-11-03 | 2007-05-03 | Uppili Sridhar | Wafer level packaging process |
| CN103253625A (en) * | 2012-02-17 | 2013-08-21 | 台湾积体电路制造股份有限公司 | Micro-electro mechanical systems (mems) structures and methods of forming the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107851618A (en) * | 2015-10-20 | 2018-03-27 | 雷神公司 | Encapsulation pressure is reduced using external air suction agent |
| CN111422822A (en) * | 2020-04-03 | 2020-07-17 | 苏州研材微纳科技有限公司 | Preparation process of nano forest getter |
| CN111422822B (en) * | 2020-04-03 | 2023-09-01 | 苏州研材微纳科技有限公司 | Preparation process of nano forest getter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20080128841A1 (en) | Semiconductor device carrying micro electro mechanical system | |
| US9428378B2 (en) | Component including two semiconductor elements between which at least two hermetically tightly sealed cavities having different internal pressures are formed and method for manufacturing such a component | |
| JP6254700B2 (en) | Package structure of microelectronic device with improved hermeticity by diffusion barrier layer | |
| US9554471B2 (en) | Structure with several cavities provided with access channels of different heights | |
| JP5792106B2 (en) | Micro-electromechanical system sensor and manufacturing method thereof | |
| US10384932B2 (en) | Device including micromechanical components in cavities having different pressures and method for its manufacture | |
| EP2897162B1 (en) | Encapsulation structure including trenches partially filled with getter material | |
| US8621929B2 (en) | Manufacturing method for a micromechanical component and micromechanical component | |
| TW201427890A (en) | Process to produce a cap for an MENS-component and hybrid integrated part with such a cap | |
| JP2017516989A (en) | Sensor structure element with two sensor functions | |
| US20160137487A1 (en) | Package structure including a cavity coupled to an injection gas channel composed of a permeable material | |
| US20130105959A1 (en) | Structure for hermetic encapsulation of a device and an electronic component | |
| US9511998B2 (en) | MEMS device having a getter | |
| CN105084292A (en) | Vacuum packaging structure and vacuum packaging method of MEMS device | |
| JP2007141685A (en) | Sealing structure and manufacturing method of the same | |
| US9878902B2 (en) | Cavity pressure modification using local heating with a laser | |
| TWI715689B (en) | Sensor element with laser-activated getter material | |
| US20140291011A1 (en) | Electronic device and method for fabricating the same | |
| US10336608B2 (en) | Methods for fabricating electronic devices including substantially hermetically sealed cavities and getter films | |
| US11014807B2 (en) | Method for producing a system including a first microelectromechanical element and a second microelectromechanical element, and a system | |
| US10994989B2 (en) | Method for producing a microelectromechanical component and wafer system | |
| US10221063B2 (en) | Multi-level getter structure and encapsulation structure comprising such a multi-level getter structure | |
| TWI771434B (en) | Micromechanical apparatus comprising a first cavity and a second cavity | |
| US10468541B2 (en) | Semiconductor device with through-substrate via and corresponding method of manufacture | |
| CN101362586A (en) | MEMS encapsulation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151125 |
|
| RJ01 | Rejection of invention patent application after publication |