CN105084290B - A kind of MEMS chip of the specimen holder for transmission electron microscope - Google Patents
A kind of MEMS chip of the specimen holder for transmission electron microscope Download PDFInfo
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- CN105084290B CN105084290B CN201510395317.4A CN201510395317A CN105084290B CN 105084290 B CN105084290 B CN 105084290B CN 201510395317 A CN201510395317 A CN 201510395317A CN 105084290 B CN105084290 B CN 105084290B
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Abstract
The invention provides a kind of MEMS chip of the specimen holder for transmission electron microscope, including：Dielectric layer；The first electrode of film like and second electrode, first electrode and second electrode are formed on the upper surface of dielectric layer and are spaced from each other；Wherein, first electrode have the first main part extending in a first direction and from the side of the first main part transverse to first direction multiple first fingers of stretching out of second direction；The terminal part of every one first fingers and/or sidepiece are adjacent to second electrode, thus mutually adjacent place between the first electrode and the second electrode defines electric field applying zone；With the through hole being formed in electric field applying zone, through hole upwardly penetrates through dielectric layer in the side of the upper surface perpendicular to dielectric layer.A kind of MEMS chip of specimen holder for transmission electron microscope of the present invention, by shape and the pattern of the electrode of design MEMS chip so as to sample can be powered up with field or heat added electric field simultaneously.
Description
Technical field
The present invention relates to the chip of transmission electron microscope, more particularly to a kind of sample for transmission electron microscope
The MEMS chip of bar.
Background technology
With the appearance of spherical aberration corrector, electron micrology enters sub- angstrom epoch, the spatial discrimination of 0.7 angstrom of even more high
Rate makes transmission electron microscope have enough abilities to go to differentiate most atoms, can complete on an atomic scale to material structure and
The comprehensive characterization of electronic structure.But want associating and find the physics law of its behind and then referring to of research material structure and performance
Lead the design of new material, the static structure of only research material is far from being enough it would be desirable to know that material stimulates in outfield
What kind of dynamic response under (power, heat, light, electrically and magnetically etc.) is.And material structure and performance study it is critical only that original position skill
Art, realizes observation while outfield stimulates, material structure developed in transmission electron microscope, and that is, In situ transmission electron microscopy grinds
Study carefully.
In situ transmission electron microscopy becomes one of main direction of studying of transmission electron microscopy in recent years, and
Emerge the achievement in research of a collection of In situ transmission electron microscopy in recent years, and significantly promote people that material structure is closed with performance
The understanding of connection.A critically important among these factor is the exploitation of transmission electron microscope original position specimen holder, makes a lot real in situ
Test and can realize in transmission electron microscope.At present, on example of transmission electron microscope bar, heating or added electric field are electric in situ
One important content of mirror technical research.But, the preparation process of example of transmission electron microscope bar of the prior art compares
Complexity, the requirement to operator is higher, and because the stability of transmission electron microscope example bench is not high, causes its one-tenth
Power is relatively low.Additionally, example of transmission electron microscope bar of the prior art can not be realized the heating to sample and power up simultaneously
Field function, this greatly limits the application of transmission electron microscope.
Content of the invention
It is an object of the present invention to provide a kind of MEMS chip of the specimen holder for transmission electron microscope, it is full
Foot applies required electric field to detected sample at work, thus lacking to overcome or at least to mitigate the above-mentioned of prior art
Fall into.
For achieving the above object, the present invention provides a kind of MEMS chip of the specimen holder for transmission electron microscope, uses
Treat the sample being detected by described transmission electron microscope in carrying, including：
Dielectric layer；
The first electrode of film like and second electrode, described first electrode and described second electrode are formed at described electrolyte
Layer upper surface on and be spaced from each other；Wherein, described first electrode have the first main part extending in a first direction and
From the side of described first main part transverse to described first direction multiple first fingers of stretching out of second direction；Each
The terminal part of the first fingers and/or sidepiece are adjacent to described second electrode, thus in described first electrode and described second electricity
Mutually adjacent place between pole defines electric field applying zone；With
The through hole being formed in described electric field applying zone, described through hole is in the described upper table perpendicular to described dielectric layer
The side in face upwardly penetrates through described dielectric layer；
Wherein, operationally, described sample is carried on described through hole and by described first electrode and described the
Two electrode applied voltages and to described sample apply required for electric field.
Alternatively, described second electrode has the second main part substantially extending along described first direction.
Alternatively, every one first fingers of described first electrode at its terminal part adjacent to described in described second electrode
Second main part；
Wherein, described electric field applying zone includes multiple first electric field applying zones, every one first electric field applying zone limit
It is scheduled between the terminal part position adjacent with described first fingers with described second electrode of first fingers；
Alternatively, in the plurality of first electric field applying zone at least two first electric field applying zones in described second party
Being differently sized upwards；
Alternatively, the described through hole at least two first electric field applying zones in the plurality of first electric field applying zone
It is of different sizes.
Alternatively, at the terminal part of described first fingers and/or in described second electrode and described first finger-like
Portion is formed with electric field modificationt part at adjoining position, applies in described first electric field for the shape by described electric field modificationt part
Plus in region, form desired Electric Field Distribution.
Alternatively, described second electrode also has from described second main part substantially along described second direction towards described
Multiple second fingers that first electrode is stretched out；Every one second fingers first finger-like corresponding with described first electrode
Portion is adjoining and face each other along described second direction；
Wherein, described electric field applying zone includes multiple second electric field applying zones, every one second electric field applying zone limit
It is scheduled between the terminal part of described first fingers and the terminal part of corresponding described second fingers；
Alternatively, in the plurality of second electric field applying zone at least two second electric field applying zones in described second party
Being differently sized upwards；
Alternatively, the described through hole at least two second electric field applying zones in the plurality of second electric field applying zone
It is of different sizes.
Alternatively, formed at the terminal part of described first fingers and/or at the terminal part of described second fingers
There is electric field modificationt part, formed for the shape by described electric field modificationt part desired in described second electric field applying zone
Electric Field Distribution.
Alternatively, described electric field modificationt part includes the lobe stretched out towards described electric field applying zone and/or towards institute
State the recessed recess of electric field applying zone；
Alternatively, described lobe and the female portion face each other；Wherein, still optionally further, described lobe is stretched
Enter in the female portion；
Alternatively, described lobe is configured to towards the tapered corners of described electric field applying zone.
Alternatively, the female portion is configured to opening towards the semicircular arc of described electric field applying zone or rectangular recess.
Alternatively, described second electrode also has from described second main part substantially along described second direction towards described
Multiple second fingers that first electrode is stretched out；The plurality of second fingers and the plurality of first fingers are substantially along institute
State first direction interlaced arrangement and overlap at least in part along described second direction, so that described first fingers and described
Two fingers are mutually adjacent at their sidepiece；
Wherein, described electric field applying zone includes multiple 3rd electric field applying zones, every one the 3rd electric field applying zone limit
It is scheduled between described first fingers and the sidepiece of described second fingers that is adjacent；
Alternatively, described first fingers and described second fingers have the spacing of change in said first direction,
So that at least two the 3rd electric field applying zones chi in said first direction in the plurality of 3rd electric field applying zone
Very little is different；
Alternatively, the described through hole at least two the 3rd electric field applying zones in the plurality of 3rd electric field applying zone
It is of different sizes.
Alternatively, also include the 3rd electrode of the film like as heating electrode, described 3rd electrode is formed at described electricity
It is spaced from each other on the upper surface of dielectric layer and with described first electrode and described second electrode, described 3rd electrode extends warp
Cross each electric field applying zone neighbouring described through hole in the inner, thus when described 3rd electrode is applied in electric current to described
The described sample of through hole provides required heat；
Alternatively, the plurality of 3rd electric field applying zone and/or the plurality of first electric field applying zone are arranged in one
On the individual path with the roundabout extension of S-shaped, described 3rd electrode continuously extends along described path, with succession through the plurality of 3rd
Electric field applying zone and/or the plurality of first electric field applying zone.
Alternatively, described specimen holder has four electrode catheters, and described MEMS chip also includes the electrode of four film like
Terminal, forms electrical contact for electrode catheter described with four of described specimen holder, to receive electric current and/or voltage.
Especially, present invention also offers a kind of technique making aforementioned MEMS chip, including：
One layer of silicon nitride is deposited on the front of monocrystalline silicon piece as described dielectric layer；
According to predetermined shape and position metal material evaporation described the at the described upper surface of described dielectric layer
One electrode and second electrode and optionally described 3rd electrode；
Form the described through hole penetrating described dielectric layer with dry etch process on said dielectric layer；
Described monocrystalline silicon piece is performed etching using dry etch process from the back side of described monocrystalline silicon piece, until at one
Dielectric layer described in exposing in window area；Wherein, the described first electrode of single described MEMS chip and second electrode with
And optionally described 3rd electrode and described through hole are respectively positioned in described window area.
A kind of MEMS chip of specimen holder for transmission electron microscope of the present invention, by designing the electricity of MEMS chip
The shape of pole and pattern, so as to sample can be powered up with field or heat added electric field simultaneously, meet different work requirements.This
Outward, the MEMS chip window of the present invention can also be adjusted selecting according to the species of sample and size, and the suitability is higher.Simultaneously
Because the present invention does not change the design of specimen holder, only change on chip window it is ensured that height of specimen stability it is ensured that
The atomic resolution of spherical aberration Electronic Speculum.
According to the detailed description to the specific embodiment of the invention below in conjunction with accompanying drawing, those skilled in the art will be brighter
The above-mentioned and other purposes of the present invention, advantages and features.
Brief description
Describe some specific embodiments of the present invention hereinafter with reference to the accompanying drawings by way of example, and not by way of limitation in detail.
In accompanying drawing, identical reference denotes same or similar part or part.It should be appreciated by those skilled in the art that these
Accompanying drawing is not necessarily drawn to scale.In accompanying drawing：
Fig. 1～Figure 14 is the structural representation of multiple embodiments of the MEMS chip of the present invention；
Figure 15 is the block diagram of the processing technology of the MEMS chip of the present invention.
Specific embodiment
Fig. 1 is a kind of MEMS (microcomputer of specimen holder for transmission electron microscope of first embodiment of the present invention
Electric system) chip structural representation, it includes dielectric layer 1, the first electrode 2 of film like and second electrode 3 in general manner.
First electrode 2 and second electrode 3 are spaced from each other in the upper surface of dielectric layer 1.Operationally, simultaneously to first electrode 2 He
Second electrode 3 applies different voltages and can produce electric field between first electrode 2 and second electrode 3.First electrode 1 also has
In the first direction 4 extension the first main parts 5 and from the side of the first main part 5 transverse to first direction 4 second direction 6
Multiple first fingers 7 stretching out, need exist for illustrating, multiple first fingers 7 are located at being adjacent to of the first main part 5
The side of second electrode 3, rather than the side away from second electrode 3.Second electrode 3 have substantially in the first direction 4 extension
Second main part 8 is that is to say, that the first main part 5 of first electrode 2 and the second main part 8 of second electrode 3 are substantially mutual
Parallel but not absolute parallel.Mutually adjacent place between the terminal part of each the first fingers 7 and second electrode 3 defines
Multiple first electric field applying zones 9.The through hole 10 for carrying detected sample is also included in the first electric field applying zone 9,
Through hole 10 upwardly penetrates through dielectric layer 1 in the upper surface side perpendicular to dielectric layer 1.
In a second embodiment of the present invention, as shown in Fig. 2 size in second direction 6 for multiple first fingers 7
It is not identical, correspondingly, size in second direction 6 for multiple first electric field applying zones 9 also and not exclusively phase
With therefore, when first electrode 2 is applied with a certain voltage, in various sizes of first electric field applying zone 9, its electric field intensity also can
Different.So, sample can be placed on the through hole 10 in suitable first electric field applying zone 9 by user as needed
On.Meanwhile, also due to size in second direction 6 for the first electric field applying zone 9 incomplete same so that corresponding through hole
10 size is also different, and such user can also select corresponding through hole according to the species of detected sample and size
10.
In the 3rd embodiment of the present invention, as shown in figure 3, at the terminal part of the first fingers 7 of first electrode 2
It is formed with electric field modificationt part 11, being shaped as towards the tapered corners of the first electric field applying zone 9 of electric field modificationt part 11.
Fig. 4 shows the 4th embodiment of the present invention, the second of the second electrode 3 adjoining with the first fingers 7
It is formed with electric field modificationt part 11, being shaped as towards the tapered point of the first electric field applying zone 9 of electric field modificationt part 11 at main part 8
Corner.Certainly, in addition to this it is possible at the second main part 8 of second electrode 3 weld probe electrode, probe electrode and
First fingers 7 of one electrode 2 are mutually corresponding, as shown in Figure 5.Probe electrode is generally Au needle point or Pt needle point.
In the 5th embodiment of the present invention, as shown in fig. 6, first electrode 2 the first fingers 7 terminal part and
It is each formed with electric field modificationt part 11 at second electrode 3 position adjoining with the first fingers 7.Electric field modificationt part at two
11 are respectively the lobe 12 stretched out towards the first electric field applying zone 9 and towards recessed recessed of the first electric field applying zone 9
Portion 13.Specifically, lobe 12 is towards the tapered corners of the first electric field applying zone 9, and recess 13 is opening towards the
The semi arch of one electric field applying zone 9.In another unshowned embodiment, recess 13 is that opening is applied towards the first electric field
Plus the rectangular recess in region 9.It is understood that the position of lobe 12 and recess 13 can be exchanged with each other, this does not affect
The using effect of the embodiment of the present invention.
In the 6th embodiment of the present invention, as shown in fig. 7, second electrode 3 also has from the second main part 8 substantially
6 multiple second fingers 14 stretching out towards first electrode 2 in a second direction, each second fingers 14 is right with first electrode 2
First fingers 7 answered are 6 adjoining and face each other in a second direction.The terminal part of each the first fingers 7 with corresponding
The terminal part of the second fingers 14 between define multiple second electric field applying zones 15.
In the 7th embodiment of the present invention, as shown in figure 8, multiple second electric field applying zone 15 is in second direction 6
On size incomplete same, therefore, when different voltages, different size are applied respectively to first electrode 2 and second electrode 3
The second electric field applying zone 15 in its electric field intensity would also vary from.So, user can as needed will be to be detected
Sample is placed on the through hole in suitable second electric field applying zone 15.Meanwhile, also due to the second electric field applying zone 15 exists
Size in second direction 6 is incomplete same so that the size of corresponding through hole 10 is also different, and such user also may be used
Corresponding through hole 10 is selected with the species according to detected sample and size.
In unshowned 8th embodiment of the present invention, formed at the terminal part of the first fingers 7 of first electrode 2
There is an electric field modificationt part 11, being shaped as towards the tapered corners of the second electric field applying zone 15 of electric field modificationt part 11.Equally may be used
To be understood by, electric field modificationt part 15 can also be formed with the terminal part of the second fingers 14 of second electrode 3, electric field is repaiied
Decorations portion 15 is shaped as towards the tapered corners of the second electric field applying zone 15.
Fig. 9 shows the 9th embodiment of the present invention.At the terminal part of the first fingers 7 of first electrode 2 and
It is each formed with electric field modificationt part 11, the electric field modificationt part 11 at two is respectively at the terminal part of the second fingers 14 of two electrodes 3
The lobe 12 stretched out towards the second electric field applying zone 15 and towards the recessed recess 13 of the second electric field applying zone 15, convex
Play portion 12 and recess 13 faces each other.Specifically, lobe 12 extend in recess 13, and the two forms corresponding relation.Convex
Playing portion 12 is towards the tapered corners of the second electric field applying zone 15, and recess 13 is opening towards the second electric field applying zone
15 rectangular recess.Additionally, as shown in Figure 10, recess 13 can also be the semicircle of opening direction the second electric field applying zone 15
Arc, this does not interfere with the effect of the embodiment of the present invention.
Figure 11 shows the tenth embodiment of the present invention.It is formed with electricity in the sidepiece of the first fingers 7 of first electrode 2
Field modificationt part 11, electric field modificationt part 11 is the lobe of the sidepiece of the second fingers 14 towards second electrode 3.Lobe is gradually
The corners of contracting.Certainly, in addition, electric field modificationt part 11 can also be arranged on 14 at the second fingers of second electrode 3, phase
Ying Di, electric field modificationt part 11 is the lobe of the sidepiece of the first fingers 7 towards first electrode 2.
In the 11st embodiment of the present invention, as shown in figure 12, the first fingers 7 and the second fingers 14 are substantially
4 interlaced arrangement 6 overlapping at least in part in a second direction in the first direction.Each first fingers 7 and be adjacent the
Two fingers 14 define multiple 3rd electric field applying zones 16 between their sidepiece.
In the 12nd embodiment of the present invention, as shown in figure 13, the first fingers 7 and the second fingers 14 are first
The spacing of change is had on direction 4, correspondingly, the size on 4 is not complete in a first direction for multiple 3rd electric field applying zones 16
Exactly the same.So, user can as needed detected sample be placed in suitable 3rd electric field applying zone 16
On through hole 10.Meanwhile, also due to the 3rd electric field applying zone 16 in a first direction the size on 4 incomplete same so that relatively
The size of the through hole 10 answered is also different, and such user can also select corresponding according to the species of detected sample and size
Through hole 10.
In the 13rd embodiment of the present invention, as shown in figure 14, also include the of the film like as heating electrode
Three electrodes 17 are formed at the upper surface of dielectric layer 1 and are spaced from each other with first electrode 2 and second electrode 3 respectively.3rd
Electrode 17 extends past each electric field applying zone neighbouring through hole 10 in the inner, thus being applied in electric current in the 3rd electrode 17
When can at through hole 10 detected sample provide required for heat.
In the 14th embodiment of the present invention, multiple 3rd electric field applying zones 16 and multiple first electric field applied area
Domain 9 is arranged on a path with the roundabout extension of S-shaped, and the 3rd electrode 17 continuously extends along described path, in succession to pass through
The plurality of 3rd electric field applying zone 16 and multiple first electric field applying zone 9.So, user can be to test sample to be checked
Product apply it can also be heated while electric field.
In the 15th embodiment of the present invention, specimen holder has four electrode catheters, referring back to Fig. 1, MEMS core
Piece also includes the electrode terminal 18 of four film like, forms electrical contact for four electrode catheters with specimen holder so that first
Electrode 2 and second electrode 3 can be with contact voltages, and the 3rd electrode 17 can be with pick-up current.
Additionally, present invention also offers a kind of technique making aforementioned MEMS chip, concrete steps as shown in figure 15, bag
Include：
S1, on the front of monocrystalline silicon piece deposit one layer of silicon nitride as dielectric layer 1；
Deposited silicon nitride by the method for plasma enhanced chemical vapor deposition method (PECVD) in monocrystalline silicon piece is just
Look unfamiliar and long there is certain thickness silicon nitride.Specifically, make the gas containing thin film composed atom composition by microwave or radio frequency
Volume ionization, being partially formed plasma, and plasma chemistry activity very strong it is easy to react, so can be in monocrystalline
The front of silicon chip deposits silicon nitride.It should be noted that the gas containing thin film composed atom composition mentioned herein is past
Toward the more active NH3 of character of use as N source reacting gas, but be not limited solely to NH3, can also be other contain N gas or
Mixture containing N gas.
S2, at the upper surface of dielectric layer 1, it is deposited with first electrode 2 and according to predetermined shape and position with metal material
Second electrode 3 and optional 3rd electrode 17；
The shape and size of metal electrode are defined in advance on the dielectric layer by the method for optical lithography.Specifically, light
Learn photoetching to comprise the steps：Apply one layer of corrosion resistant photoresist first on the dielectric layer, pass through one piece with relief high light and carve
Reservation shape and the hollowed-out mask plate of position is had to irradiate on the dielectric layer, the photoresist of illuminated part can go bad, and
Masked plate gear residence then will not be irradiated to, so photoresist still can stick in above；Then clear with corrosive liquids
Wash monocrystalline silicon piece, rotten photoresist can be removed, and expose following monocrystalline silicon piece, and the photoresist not being irradiated to will not be subject to
To impact；Finally particle deposition, mask, groove are carried out to monocrystalline silicon piece, thus can define institute in advance on the dielectric layer
The shape of metal electrode needing and position.
Alternatively, the method for deposit metal electrodes is electron beam evaporation.Electron beam evaporation specifically includes：Under vacuum
Carry out directly heating evaporated metal material using electron beam, so that metal material is gasified and transport, on its surface on dielectric layer 1
Upper condensation forms metal electrode thin film.
Usually, metal electrode is exotic material, and alternatively, metal electrode is gold, platinum, tantalum or some resistant to elevated temperatures conjunctions
Golden material.
S3, dielectric layer 1 is formed with dry etch process penetrate the through hole 10 of dielectric layer 1；
Through hole is the placement location of detected sample, and electron beam can be allowed to pass through herein.Specifically, dry etching
Method include reactive ion etching (RIE) and sense coupling (ICP).Similarly, the shape of through hole and position
Put and defined on dielectric layer 1 in advance by the method for optical lithography.
S4, monocrystalline silicon piece is performed etching using dry etch process from the back side of monocrystalline silicon piece, until in a window
Dielectric layer 1 in exposing in region；Wherein, the first electrode 2 of single MEMS chip and second electrode 3 and optional 3rd electricity
Pole 17 and through hole 10 are respectively positioned in window area.
Similarly, the method for optical lithography mentioned here is identical with the method for previously mentioned optical lithography.
So far, although those skilled in the art will appreciate that detailed herein illustrate and describe the multiple of the present invention and show
Example property embodiment, but, without departing from the spirit and scope of the present invention, still can be direct according to present disclosure
Determine or derive other variations or modifications of many meeting the principle of the invention.Therefore, the scope of the present invention is it is understood that and recognize
It is set to and cover other variations or modifications all these.
Claims (21)
1. a kind of MEMS chip of the specimen holder for transmission electron microscope, treats by described transmission electron microscope for carrying
The sample of detection, including：
Dielectric layer；
The first electrode of film like and second electrode, described first electrode and described second electrode are formed at described dielectric layer
On upper surface and be spaced from each other；Wherein, described first electrode has the first main part extending in a first direction and from institute
State the side of the first main part multiple first fingers that stretch out of second direction transverse to described first direction；Every one first
The terminal part of fingers and/or sidepiece are adjacent to described second electrode, thus described first electrode and described second electrode it
Between mutually adjacent place define electric field applying zone；
The through hole being formed in described electric field applying zone, described through hole is in the described upper surface perpendicular to described dielectric layer
Side upwardly penetrates through described dielectric layer；With
3rd electrode of the film like as heating electrode, described 3rd electrode is formed on the upper surface of described dielectric layer simultaneously
And be spaced from each other with described first electrode and described second electrode, described 3rd electrode extends past each electric field applying zone
And adjacent to described through hole in the inner, thus carrying to the described sample of described through hole when described 3rd electrode is applied in electric current
For required heat；
Wherein, operationally, described sample is carried on described through hole and by described first electrode and described second electricity
Pole applied voltage and to described sample apply required for electric field.
2. MEMS chip according to claim 1 is it is characterised in that described second electrode has substantially along described first
The second main part that direction extends.
3. MEMS chip according to claim 2 is it is characterised in that every one first fingers of described first electrode are at it
Adjacent to described second main part of described second electrode at terminal part；
Wherein, described electric field applying zone includes multiple first electric field applying zones, and every one first electric field applying zone is limited to
Between the terminal part of one the first fingers position adjacent with described first fingers with described second electrode.
4. MEMS chip according to claim 3 is it is characterised in that at least two in the plurality of first electric field applying zone
Individual first electric field applying zone being differently sized in this second direction.
5. MEMS chip according to claim 3 is it is characterised in that at least two in the plurality of first electric field applying zone
Described through hole in individual first electric field applying zone is of different sizes.
6. MEMS chip according to claim 3 it is characterised in that at the terminal part of described first fingers and/or
It is formed with electric field modificationt part at the described second electrode position adjoining with described first fingers, for by described electricity
The shape of field modificationt part forms desired Electric Field Distribution in described first electric field applying zone.
7. MEMS chip according to claim 2 is it is characterised in that described second electrode also has from described second main body
Multiple second fingers that portion substantially stretches out along described second direction towards described first electrode；Every one second fingers and institute
State corresponding first fingers of first electrode adjoining and face each other along described second direction；
Wherein, described electric field applying zone includes multiple second electric field applying zones, and every one second electric field applying zone is limited to
Between the terminal part of one described first fingers and the terminal part of corresponding described second fingers.
8. MEMS chip according to claim 7 is it is characterised in that at least two in the plurality of second electric field applying zone
Individual second electric field applying zone being differently sized in this second direction.
9. MEMS chip according to claim 7 is it is characterised in that at least two in the plurality of second electric field applying zone
Described through hole in individual second electric field applying zone is of different sizes.
10. MEMS chip according to claim 7 it is characterised in that at the terminal part of described first fingers and/or
It is formed with electric field modificationt part at the terminal part of described second fingers, for the shape by described electric field modificationt part described
Form desired Electric Field Distribution in second electric field applying zone.
11. MEMS chip according to claim 6 or 10 are it is characterised in that described electric field modificationt part includes towards described
Lobe that electric field applying zone is stretched out and/or towards the recessed recess of described electric field applying zone.
12. MEMS chip according to claim 11 are it is characterised in that the mutual face of described lobe and the female portion
Right.
13. MEMS chip according to claim 12 are it is characterised in that described lobe extend in the female portion.
14. MEMS chip according to claim 11 are it is characterised in that described lobe is configured to apply towards described electric field
Plus the corners that region is tapered.
15. MEMS chip according to claim 11 are it is characterised in that the female portion is configured to opening towards described electricity
The semicircular arc of field applying zone or rectangular recess.
16. MEMS chip according to any one of claim 2-6 it is characterised in that described second electrode also have from
Multiple second fingers that described second main part substantially stretches out along described second direction towards described first electrode；Described many
Individual second fingers and the plurality of first fingers are substantially along described first direction interlaced arrangement and along described second direction
Overlap at least in part, so that described first fingers and described second fingers are mutually adjacent at their sidepiece；
Wherein, described electric field applying zone includes multiple 3rd electric field applying zones, and every one the 3rd electric field applying zone is limited to
Between one described first fingers and the sidepiece of described second fingers that is adjacent.
17. MEMS chip according to claim 16 are it is characterised in that described first fingers and described second fingers
There is the spacing of change in said first direction, so that at least two the 3rd electricity in the plurality of 3rd electric field applying zone
Applying zone being differently sized in said first direction.
18. MEMS chip according to claim 16 are it is characterised in that in the plurality of 3rd electric field applying zone at least
Described through hole in two the 3rd electric field applying zones is of different sizes.
19. MEMS chip according to claim 1 are it is characterised in that the plurality of 3rd electric field applying zone and/or institute
State multiple first electric field applying zones to be arranged on a path with the roundabout extension of S-shaped, described 3rd electrode is along described path
Continuous extension, with succession through the plurality of 3rd electric field applying zone and/or the plurality of first electric field applying zone.
20. MEMS chip according to any one of claim 1-10 and 19 are it is characterised in that described specimen holder has four
Individual electrode catheter, described MEMS chip also includes the electrode terminal of four film like, for described in four of described specimen holder
Electrode catheter forms electrical contact, to receive electric current and/or voltage.
The processing technology of the MEMS chip any one of a kind of 21. claim 1-20, including：
One layer of silicon nitride is deposited on the front of monocrystalline silicon piece as described dielectric layer；
According to predetermined shape and position described first electricity of metal material evaporation at the described upper surface of described dielectric layer
Pole and second electrode and described 3rd electrode；
Form the described through hole penetrating described dielectric layer with dry etch process on said dielectric layer；
Described monocrystalline silicon piece is performed etching using dry etch process from the back side of described monocrystalline silicon piece, until in a window
Dielectric layer described in exposing in region；Wherein, the described first electrode of single described MEMS chip and second electrode and institute
State the 3rd electrode and described through hole is respectively positioned in described window area.
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| CN109856168A (en) * | 2019-02-02 | 2019-06-07 | 安徽泽攸科技有限公司 | One kind being used for electron microscope double shaft tilting original position specimen holder |
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| CN101217097A (en) * | 2008-01-18 | 2008-07-09 | 北京工业大学 | A transmission electron microscope measurement support grid based on phase change materials |
| CN102779712A (en) * | 2012-08-07 | 2012-11-14 | 中国石油大学(北京) | Thermally driven transmission electron microscope grid made of intelligent composite material |
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