CN1050778A - The electrostatic printing carrier of image - Google Patents
The electrostatic printing carrier of image Download PDFInfo
- Publication number
- CN1050778A CN1050778A CN 89108360 CN89108360A CN1050778A CN 1050778 A CN1050778 A CN 1050778A CN 89108360 CN89108360 CN 89108360 CN 89108360 A CN89108360 A CN 89108360A CN 1050778 A CN1050778 A CN 1050778A
- Authority
- CN
- China
- Prior art keywords
- resistant strata
- electrostatic printing
- conductor layer
- temperature
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Printing Plates And Materials Therefor (AREA)
Abstract
The present invention relates to electrophotography.
Image electrostatic printing carrier is by metal base plate (1), and middle conduction resistant strata (2) and photoelectrical body layer (3) are formed.Middle conduction resistant strata composition material is fine-grained structure and the density that has kept the constituent between photoelectric conductor layer (3) and middle conduction resistant strata (2) because of its plastic deformation ability.
Description
The present invention relates to electrophotography, more specifically say, relate to the electrostatic printing carrier of image.
The present invention can use in the electrophotography directly related with X-ray production apparatus with producing duplicating machine, medical treatment and industrial flaw detection, the device that also can be used for recorded electronic computing machine output data, the laser recorder that directly prepares galley, laser camera output unit-printer, Linofilm, seismoscope, weld seam control device and aeroplane photography.Existing problem is, invent a kind of electrostatic printing carrier of image, this carrier is still can keep its usability, life-span and photoelectric parameter under the service condition of 293～318 ° of K in temperature range, when under temperature is the condition of 223 ° of K, transporting, still can keep its low temperature resistance and winter resistance.
The electrostatic printing carrier (SUA1191877) of known image is by metal base plate, and photoelectric conductor layer and middle conduction resistant strata are formed.This intermediate stable layer is between metal base plate and the photoelectric conductor layer, by can hinder from metal base plate separate out crystal, with the combining of photoelectric conductor layer than forming with the more firm material that combines of metal base plate.
In known this carrier, owing to the different plastic yield that cause of the linear expansion coefficient of layers of material have destroyed the density that photoelectric conductor layer combines with middle conduction resistant strata.Therefore, when this class electrostatic printing carrier uses under the condition of temperature rise to 318 ° K, the photoelectric parameter poor stability of its photoelectric conductor layer, serviceable life is short, and when carrying under temperature is reduced to the condition of 223 ° of K, can damage photoelectric conductor layer again.
Task of the present invention is to invent the image electrostatic printing carrier with conduction resistant strata in the middle of a kind of like this, this resistant strata, when producing plastic yield because of the line of material expansion coefficient of photoelectric conductor layer and resistant strata is different, the close material that still can keep this two-layer combination, thereby guarantee to improve the stability of the photoelectric parameter of photoelectric conductor layer, and then guaranteed the reliability of image electrostatic printing carrier.
The objective of the invention is to improve the stability of photoelectric parameter of the photoelectric conductor layer of image electrostatic printing carrier.
Another object of the present invention is to improve the usability of image electrostatic printing carrier.
Another purpose of the present invention is after the carrying and/or still can guarantee the usability of copying image carrier after standing rugged surrounding temperature influence.
The solution of task of the present invention is, image electrostatic printing carrier is by metal base plate and photoelectric conductor layer, and be configured in electrical ties on the metal base plate and that can guarantee this two interlayer in the middle of the conduction resistant strata form.According to the present invention, this resistant strata is made of the microparticle material that is of a size of 0.5～5 μ m.This material between 0.5～0.6 times of temperature of its temperature of fusion of calculating with absolute temperature the time its rate of deformation be 10
-1-10
-4Mm/min.
Preferably select for use Lead-tin alloy as centre conduction resistant strata material.
Also can select the material of bismuth-ashbury metal for use as this resistant strata.
Can also select bismuth-lead alloy material of resistant strata for this reason for use.
The present invention by constitute by the fine material of 0.5～5 μ m, when being 10 in its rate of deformation with between 0.5～0.6 times of the temperature of fusion of Kelvinometer the time
-4-10
-4Reliability and serviceable life that the middle conduction resistant strata that the material of mm/min is made improves image electrostatic printing carrier.This be because, even photoelectric conductor layer and the middle resistant strata that conducts electricity also can not destroy the ability to work of photoelectric conductor layer when producing bigger plastic yield because of the polar expansion derivative is different.Therefore, this has just reduced the consumption of very rare aluminium base and valuable photoelectric conductor material.Adopt this resistant strata, can stop non-metallic impurities and compound to penetrate in the photoelectric conductor layer.Like this, because the galvanochemistry operation when having removed the preparation sheet metal, and simplified the manufacture craft of image electrostatic printing carrier.And, reducing labour intensity for utilizing metal base plate to take off from it in the process of useless photoelectric conductor layer again.
Below, by specific embodiment and corresponding accompanying drawing the present invention being described, this accompanying drawing is the longitudinal diagram of image electrostatic printing carrier of the present invention.
Image electrostatic printing carrier is configured on the metal base plate 1 by metal base plate 1, and middle conduction resistant strata 2 and being configured on the resistant strata 2 and with its photoelectric conductor layer 3 by electrical ties is formed.Resistant strata 2 is to be made by the fine material that is of a size of 0.5～5 μ m, and with in during 0.6～0.5 times of the temperature of fusion of Kelvinometer, its rate of deformation is 10 to this material at it
-1-10
-4Mm/min.
Photoelectric conductor layer 3 as make by the glassy selenium that adds oxide, resistant strata 2, by as the tin-lead alloy making, the combination of this two interlayer is very firm.
Protect the tin-lead alloy atomic energy that looses in selenium electric conductor 3 and impel the horizontal binding that forms between middle element, reach when under cryogenic conditions, transporting and storing injury-free so can guarantee the stability that image electrostatic printing carrier is worked under hot conditions.Even arrive the low temperature below-100 ℃, brittle rupture can not take place in tin-plumbous eutectic alloy yet.The particle size that is coated in resistant strata on the metal base plate, that made by tin-plumbous eutectic alloy should not surpass 5 μ m.Like this, it also can keep fine-grain structure when 0.6 times of being heated to the tin-lead alloy temperature of fusion of Kelvinometer.Requirement is heated to this temperature, at first is in order to develop diffusion mass transfer.Secondly, be in order in crystal boundary, to produce climbing and drifting about of lattice dislocation.The 3rd, be for pan-shift error on crystal boundary, otherwise, just can not slippage on crystal boundary.
Resistant strata 2 stops non-metallic impuritiess to penetrate in the photoelectric conductor layer 3 and chemical combination with it, but also the topped a large amount of crystal nucleus of separating out on the surface of metal base plate 1 of living.Thereby it can improve the stability of photoelectric conductor layer, and then has improved the reliability of copying image carrier.
When needs take off photoelectric conductor layer 3 that used or mechanical damage, image electrostatic printing carrier should be heated to fixed temperature.For example, when the photoelectric conductor layer of changing by glassy making 3, this carrier should be heated to 353 ° of K.Under this temperature, the rapid deliquescing of selenium has reduced between the atom that penetrates into the composition in the resistant strata 2 in conjunction with fastness, has also strengthened the combination of their photoelectric conductor layers 3.Therefore, separated from metal base plate by layer 2 and 3 constituents that form.After this, metal base plate 1 can be reused for construction drawing again as the electrostatic printing carrier.
The reliable usability of the image electrostatic printing carrier of conduction resistant strata is explained as follows in the middle of having.
The atom that penetrates into the alloy-layer 2 of photoelectric conductor layer 3 has promoted intermolecular formation laterally to connect, thereby can guarantee under the condition of 232 ° of K, to store in the transportation in that temperature is low, or photoelectric conductor layer 3 when the temperature conditions of height to 318 ° K uses and the reliable binding between the resistant strata 2.
In use, when temperature high to this material with 0.6 times of the temperature of fusion of Kelvinometer the time because the difference of linear expansion coefficient produces plastic yield on the neat face of the branch of resistant strata 2 and photoelectric conductor layer.
When transportation and the temperature of storing image electrostatic printing carrier up to this material with 0.5 times of the temperature of fusion of Kelvinometer the time, particle size is that the material of the resistant strata 2 of 0.5～5.0 μ m has this enough plastic deformation ability that is approximately 30% relative elongation, and the constituent density of 2 of photoelectric conductor layer 3 and resistant stratas is destroyed.
When the plastic yield speed of resistant strata greater than 10
-1During mm/min, can produce sizable imperfection at layer 2 and 3 borderline lattice of layer, cause breaking that atom links, this is the reason that causes this constituent density between two-layer to destroy.Thereby, the root that image electrostatic printing carrier structure is damaged.
When resistant strata 2 material plastic yield speed hour, as, equal 10
-4During mm/min, resistant strata material at this moment has relative elongation to be approximately 2000% plastic deformation ability, can not break so the atom on the neat face of branch between resistant strata 2 and the photoelectric conductor layer 3 links.Exactly because resistant strata 2 has big like this relative elongation, so the constituent on the interface between the layer 2 and layers 3 is broken.
In temperature when being it, often with up to 10 with 0.5 to 0.6 times of the temperature of fusion of Kelvinometer
-1The speed of mm/min is carried out the material of the resistant strata 2 of plastic yield, and its size should be 0.5 to 5 μ m.Because material particle size is thin more, toughness is good more, and its plasticity_resistant deformation ability is also just big more.
Obtaining ultra-fine grain is the thing of part complexity.In order to guarantee that resistant strata 2 is with prerequisite adhesion between the metal base plate 1, need carrying out condensation deposition (material of resistant strata 2 is deposited on the base plate 1) under the temperature of 353 ° of K, nucleus grows up to structure cell (OCTPOBKa), and is condensed under said temperature and is of a size of 0.5 or bigger crystal grain.It is inappropriate producing ultra-fine grain.Because just do not have enough plastic flow as fruit granule is too thin.The ability of material plasticity_resistant deformation surpasses what times of wishing plastic deformation ability, and this also will be decided by the slip on the grain boundary.This slip is to produce by the non-fracture dislocation motion of climbing and slippage forms in the interface.For the crystal grain that has greater than 5 μ m, can detect on its crystal boundary has bigger resistance to exist to slip.This can cause the forfeiture of the abnormal deformation ability that resistant strata 2 had.
When the plastic deformation velocity greater than 10
-1During mm/min, the slippage process is preponderated; When the plastic deformation velocity less than 10
-4During mm/min, diffusion creep is exactly main; When plastic yield speed 10
-1To 10
-4In the time of between the mm/min, preponderate gradually along the slippage of grain boundary.
When high speed plastic is out of shape, displacement multiplication, more long-pending bigger, thus making it sclerosis, plasticity reduces, until completely losing deformability.
In order to understand the present invention better, provided the embodiment of following several image electrostatic printing carriers.
Example 1.
Used in copy machines electrostatic printing image-carrier is made by aluminum alloy bottom plate, tin-lead alloy, and thickness is that 5 μ m, particle size are the middle conduction resistant strata of 3 μ m and the selenium electric conductor layer composition that thickness is 65 μ m.When this carrier used under the temperature conditions of 293 ° of K, the relative elongation of middle conduction resistant strata was approximately 2000%, and co-variation shape speed equals 10
-2Mm/min.This just can keep the density of selenium-Xi-plumbous constituent, thereby can guarantee that the image electrostatic printing is loaded in the reliability under the above-mentioned condition of work.
Example 2.
Used in copy machines image electrostatic printing carrier is by aluminum alloy bottom plate, and bismuth-ashbury metal is made, particle size is that 5 μ m, thickness are the middle conduction resistant strata of 3 μ m, and thickness is the selenium electric conductor layer composition of 80 μ m.When carrier was worked under 318 ° of K conditions, the relative elongation of middle conduction resistant strata was 700%, and rate of deformation is 10
-1Mm/min, this can reduce the density of the plumbous one-tenth of selenium-Sn-Bi thing, thereby guarantees the stability of the photoelectric parameter of image electrostatic printing carrier under above-mentioned service condition and prolonged serviceable life
Example 3.
Duplicate a used in copy machines image electrostatic printing carrier by aluminum alloy bottom plate, make by bismuth-aluminium alloy, particle size be 0.5 μ m, thickness be 4 μ m in the middle of the conduction resistant strata, and thickness is that the selenium matter photoelectric conductor layer of 53 μ m is formed.When carrier under the temperature of 223 ° of K, during transportation, the relative elongation of middle conduction resistant strata is 35%, rate of deformation is 10
-4Mm/min can keep the density of selenium-bismuth-plumbous constituent like this, and then can guarantee that this image electrostatic printing carrier is intact in transportation, and can need not closely knit packing and just can store under the temperature conditions of 223 ° of K.
Claims (4)
1, image electrostatic printing carrier is by metal base plate (1), photoelectric conductor layer (3) and with both electrical ties and be configured on the metal base plate (1) in the middle of conduction resistant strata (2) form, it is characterized in that, middle conduction resistant strata is to be made by the fine material that is of a size of 0.5～5 μ m, when temperature be this material with 0.5～0.6 times of the temperature of fusion of Kelvinometer the time, its rate of deformation is 10
-1To 10
-4Mm/min.
2, carrier according to claim 1 is characterized in that, the material of middle conduction resistant strata (2) is a tin-lead alloy.
3, carrier according to claim 1 is characterized in that, the material of middle conduction resistant strata (2) is bismuth-ashbury metal.
According to the described carrier of claim 1, it is characterized in that 4, the material of middle conduction resistant strata (2) is bismuth-lead alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 89108360 CN1050778A (en) | 1989-02-24 | 1989-10-05 | The electrostatic printing carrier of image |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/SU1989/000051 WO1990010256A1 (en) | 1989-02-24 | 1989-02-24 | Electrographic image carrier |
| CN 89108360 CN1050778A (en) | 1989-02-24 | 1989-10-05 | The electrostatic printing carrier of image |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1050778A true CN1050778A (en) | 1991-04-17 |
Family
ID=25742591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 89108360 Pending CN1050778A (en) | 1989-02-24 | 1989-10-05 | The electrostatic printing carrier of image |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1050778A (en) |
-
1989
- 1989-10-05 CN CN 89108360 patent/CN1050778A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tu | Cu/Sn interfacial reactions: thin-film case versus bulk case | |
| Sunwoo et al. | The growth of Cu-Sn intermetallics at a pretinned copper-solder interface | |
| US6787012B2 (en) | Apparatus for the synthesis of layers, coatings or films | |
| US6593213B2 (en) | Synthesis of layers, coatings or films using electrostatic fields | |
| US6736986B2 (en) | Chemical synthesis of layers, coatings or films using surfactants | |
| US6500733B1 (en) | Synthesis of layers, coatings or films using precursor layer exerted pressure containment | |
| Kim et al. | Morphology of instability of the wetting tips of eutectic SnBi, eutectic SnPb, and pure Sn on Cu | |
| US20050186805A1 (en) | Synthesis of layers, coatings or films using collection layer | |
| EP0045195B1 (en) | Semiconductor device, a method of making a low-resistance contact between a metal and a layer of polycrystalline p-type cdte in said semiconductor device and a cadmium-selective etchant which is useful for said method | |
| US4796083A (en) | Semiconductor casing | |
| Sankey et al. | Dangling bonds and Schottky barriers | |
| CN88103198A (en) | The method of surface bonding of ceramic bodies | |
| Kuchař et al. | Purification methods of Cd, Te and CdTe and periodicity of segregation coefficients of admixtures | |
| CN1050778A (en) | The electrostatic printing carrier of image | |
| Philofsky et al. | A review of the limitations of aluminum thin films on semiconductor devices | |
| Chen et al. | Microstructure of polycrystalline CuInSe2/Cd (Zn) S heterojunction solar cells | |
| Yost | Soldering to gold films: The importance of lead-indium alloys | |
| EP0036113B1 (en) | Solution for dissolving noble metal alloys which include tin and re-work method of removing said alloys from a substrate | |
| Mader | Metal/metal-oxide interfaces: structure and chemical composition using HRTEM | |
| Su et al. | Morphology and growth kinetics of Ag 3 Sn during soldering reaction between liquid Sn and an Ag substrate | |
| Ruddle et al. | Reduction in mechanical strength of copper by the presence of a thin epitaxial overgrowth of nickel | |
| Miller et al. | Superconductivity at the Surface of PbTe | |
| EP1470593A2 (en) | Photovoltaic devices and compositions for use therein | |
| Cox et al. | Deformation microfabric development in chalcopyrite in fault zones, Mt. Lyell, Tasmania | |
| Blair et al. | Manufacturing concerns of the electronic industry regarding intermetallic compound formation during the soldering stage |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |