CN105068106A - Scintillator photonic crystal structure and manufacturing method therefor - Google Patents
Scintillator photonic crystal structure and manufacturing method therefor Download PDFInfo
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- CN105068106A CN105068106A CN201510386257.XA CN201510386257A CN105068106A CN 105068106 A CN105068106 A CN 105068106A CN 201510386257 A CN201510386257 A CN 201510386257A CN 105068106 A CN105068106 A CN 105068106A
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Abstract
The invention discloses a scintillator photonic crystal structure and a manufacturing method therefor, and is used for solving a technical problem that a conventional scintillator is low in efficiency of light output. The technical scheme is that the scintillator photonic crystal structure comprises a scintillator and a photonic crystal; the photonic crystal consists of a series of hexagonal or quadrangular periodically-arranged photonic crystal microstructures. The method comprises the steps: positive template manufacturing, negative template manufacturing, polymer coating and solidifying, and demolding. The surface of the scintillator is provided with a periodically-arranged photonic crystal microstructure layer, wherein the size of the periodically-arranged photonic crystal microstructure layer is equivalent to the wavelength of light of the scintillator. The photonic crystal composed of the photonic crystal microstructures achieves the modulation of fluorescent light of the scintillator, thereby reducing the total reflection of the fluorescent light of the scintillator at an interface and the multiple scattering of internal light of the scintillator, enabling the fluorescent light of the scintillator to be transmitted outside from the surface of the scintillator, and improving the light output efficiency of the scintillator.
Description
Technical field
The present invention relates to a kind of scintillator, particularly relate to a kind of scintillator photons crystal structure.The invention still further relates to the method for making of above-mentioned scintillator photons crystal structure.
Background technology
In radiation detection field, scintillator refer to the radiation effects such as ray or particle after can produce the material of fluorescence.Popular says, scintillator function is exactly energy conversion radiation be deposited on wherein is that fluorescent photon discharges.Scintillation detector is generally made up of scintillator and photodetector, and the energy conversion that wherein scintillator makes radiation deposit is fluorescent photon, and photodetector detection scintillator fluorescence is also converted into electric signal output, thus realizes the detection to radiation.The information such as kind, time, energy, position, momentum of radiation field particle can be obtained from the electric signal that photodetector exports.Therefore, scintillation detector is widely used in ground nuclear radiation detection, space ray detection and particle physics and nuclear physics experiment research etc.
The energy resolution, intrinsic detection efficiency etc. of light output to scintillation detector of scintillator have decisive influence.The scintillator of High Light Output is that domestic and international nuclear radiation detection field important one of pursues a goal always.The light output of scintillator is determined jointly by scintillator intrinsic photoyield and light extraction efficiency.Most of commercial scintillators intrinsic photoyield of current use, close to the theoretical limit of its intrinsic luminescence efficiency, improves scintillator intrinsic photoyield by growth technique and becomes more and more difficult.But the light extraction efficiency on the other hand in practical application is not high.This is because the refractive index of most of scintillator is larger, its specific refractivity is usually between 1.4 ~ 3.0, light is from less to angle of total reflection when air or other medium transmissions in scintillator, and causing most of blinking to be limited in cannot directly outgoing in scintillator.Be the scintillator of 2.0 for refractive index, the angle of total reflection in itself and Air Interface is 30 °, theory calculate shows to only have the passage of scintillation light of 13% freely to shine air from scintillator, and remaining blinking is then absorbed by scintillator or from the outgoing of scintillator edge after multiple reflections.The process of this multiple reflections reduces the light output of scintillator, is the key factor that the energy resolution of restriction scintillator, time performance and scintillator are applied to low energy ray detection.
The fluorescent photon that can utilize photon crystal structure to regulate and manipulate scintillator changes scintillator luminous parameters.Photonic crystal is that a class has the engineer of periodic dielectric structures and the crystal of manufacture on optics yardstick.Similar with the modulation of semiconductor lattice to electron wave function, photonic crystal can modulate the electromagnetic wave with respective wavelength.When utilizing emitted light arrives scintillator-Air Interface along the direction being greater than the angle of total reflection, can be totally reflected in interface, which has limited the outgoing of light.When there is total reflection, electromagnetic field can form the energy distribution of non-propagating form at the At The Height of the about wavelength in the air side at interface, the field that dies of namely declining.If arrange in this region the photonic crystal that one deck has periodic structure, decline field and the photon crystal coupled effect of dying, when the geometric parameter of photonic crystal meets certain condition, the electromagnetic field of these non-propagating forms will by photonic crystal diffraction, become electromagnetic field and the photo emissions of mode of propagation, thus achieve the extraction to light.
Document 1 " Broadbandlightoutputenhancementforscintillatorusingwhisp ering-gallerymodesinnanospheres.Phys.StatusSolidiA.2014; 211 (7), 1583 ~ 1588 " disclose the photon crystal structure that a kind of micro-sphere array adopting self-assembling method to prepare in scintillator surface is formed; and applied for national inventing patent (a kind of highlight extract efficiency scintillator utilizing surface photon structure to realize " (Chinese patent, application number 201410496266.X).The method is by swimming in the polystyrene microsphere on deionized water surface under molecular force effect, and self assembly forms the photon crystal structure of hexagonal periodic arrangement.These photon crystal structures can improve scintillator light extraction efficiency.The photon crystal structure prepared due to self-assembling method is raised by many locals with different orientation to form on macroscopical area, the luminous dependence to direction of the photon crystal structure that this makes the method make is perfect not as theoretical simulation result, limits the application of such photonic crystal.
Nano impression is a kind of micro-nano structure manufacturing technology that semiconductor applications is emerging nearly ten years.In document 2 " a kind of method utilizing nanometer embossing to prepare sapphire pattern substrate fast " (Chinese patent, application number 201210483894.5), the graphics of nanometer dimension of Sapphire Substrate that utilized nanometer embossing to make; In document 3 " a kind of method preparing GaN base photonic crystal LED based on nano impression " (Chinese patent, application number 201110087571.X), prepare the photonic crystal LED of GaN base.Also the patent much utilizing nanometer embossing to make the device of photonic crystal is on the semiconductor had, as document 4 " for the patterned nano-imprinting device of Sapphire Substrate and method " (Chinese patent, application number 20110049910.X), document 5 " a kind of full wafer circle nanometer stamping and photoetching machine " (Chinese patent, application number 201110266251.0), document 6 " device of Integral wafer nano-imprinting " (Chinese patent, application number 201220673702.3) etc.In the above documents, its nanometer embossing is all finally make micro-nano structure on the semiconductor, and photoresist (a kind of organic polymer) mainly plays the mask plate effect of photoetching process wherein.In fact, the such transparence organic polymer being similar to photoresist can be formed directly in the structure of periodic distribution by nanometer embossing, use as photonic crystal.
Summary of the invention
In order to overcome the low deficiency of existing scintillator light output efficiency, the invention provides a kind of scintillator photons crystal structure.This scintillator photons crystal structure comprises scintillator and photonic crystal two parts, and photonic crystal is made up of a series of one-tenth hexangle type or four limit type periodic arrangement photon crystal microstructures.Photonic crystal method for making comprises force plate making, negative template making, polymer-coated and the step such as solidification, demoulding process.To arrange photon crystal microstructure owing to making one deck yardstick cycle suitable with scintillator emission wavelength in scintillator surface, the photonic crystal consisted of photon crystal microstructure is to the modulating action of scintillator fluorescence, reduce the total reflection of scintillator fluorescence in interface and the Multiple Scattering of scintillator interior lights, make blinking go out to shoot out from scintillator surface as early as possible, improve the defeated efficiency of scintillator light.
The present invention also provides the method for making of above-mentioned scintillator photons crystal structure.
The technical solution adopted for the present invention to solve the technical problems is: a kind of scintillator photons crystal structure, be characterized in comprising scintillator 2 and photon crystal 1, photon crystal 1 fits tightly the surface in scintillator 2, photon crystal 1 is made up of the photon crystal microstructure 101 being sexangle or quadrilateral periodic arrangement, and photon crystal 1 is formed by ultraviolet lighting, heating or radiation mode solidification by transparent organic polymer material.
Described photon crystal microstructure 101 is any one of column type, taper, cuboid-type or polyhedral.
Described photon crystal microstructure 101 spacing is 200 ~ 2000nm, is highly 50 ~ 800nm.
When described photon crystal microstructure 101 is column types, its diameter is 100 ~ 1000nm.
When described photon crystal microstructure 101 is tapers, its maximal side is 100 ~ 1000nm.
When described photon crystal microstructure 101 is cuboid-type, its width and length are 100 ~ 1000nm.
When described photon crystal microstructure 101 is polyhedrals, its length of side is 100 ~ 1000nm.
A method for making for above-mentioned scintillator photons crystal structure, is characterized in adopting following steps:
Step one, the fluorescence of foundation scintillator 2 transmitting and the electromagnetic action rule of medium, obtain the size with the photon crystal microstructure 101 of scintillator 2 characteristics of luminescence Optimum Matching, and the forward microstructure 301 measure-alike with the photon crystal microstructure 101 calculated is made on substrate, the substrate with forward microstructure 301 is force plate 3.
Step 2, there is surface casting one deck dimethyl silicone polymer of forward microstructure 301 at force plate 3, dimethyl silicone polymer naturally will launch and is full of the gap of forward microstructure 301, after waiting for dimethyl silicone polymer solidification, itself and force plate 3 are separated, obtain that a dimethyl silicone polymer is made, that one side has trans microstructure 401 negative template 4.
Step 3, organic polymer 5 in the surperficial spin coating layer of transparent of scintillator 2, negative template 4 is overlying on organic polymer 5 with the one side of trans microstructure 401, applying pressure to negative template 4 makes organic polymer 5 be full of the gap of trans microstructure 401, utilizes ultraviolet lighting, irradiation or heating means to make organic polymer 5 curing molding gradually.
Step 4, maintain organic polymer 5 and fit with scintillator 2 intimate surface, and negative template 4 is separated with the organic polymer 5 after solidification, fill the organic polymer 5 entering trans microstructure 401 gap and solidify i.e. formation photon crystal microstructure 101, the whole organic polymer 5 after solidification is photon crystal 1.
The substrate of described making force plate 3, its surfaceness is less than 1000nm.
The dimethyl silicone polymer thickness that described force plate 3 is built is not less than forward microstructure 301 height of force plate 3; Organic polymer 5 thickness of the surperficial spin coating of scintillator 2 is not more than the height of the forward microstructure 301 of force plate 3.
The invention has the beneficial effects as follows: this scintillator photons crystal structure comprises scintillator and photonic crystal two parts, photonic crystal is made up of a series of one-tenth hexangle type or four limit type periodic arrangement photon crystal microstructures.Photonic crystal method for making comprises force plate making, negative template making, polymer-coated and the step such as solidification, demoulding process.To arrange photon crystal microstructure owing to making one deck yardstick cycle suitable with scintillator emission wavelength in scintillator surface, the photonic crystal consisted of photon crystal microstructure is to the modulating action of scintillator fluorescence, reduce the total reflection of scintillator fluorescence in interface and the Multiple Scattering of scintillator interior lights, make blinking go out to shoot out from scintillator surface as early as possible, improve the defeated efficiency of scintillator light.
Below in conjunction with the drawings and specific embodiments, the present invention is elaborated.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of scintillator photons crystal structure of the present invention.
Fig. 2 is the process flow diagram of scintillator photons crystal structure method for making of the present invention.
Fig. 3 is the scanning electron micrograph of the scintillator photons crystal structure that the inventive method makes.
Fig. 4 is the scintillator light output comparison diagram under ultraviolet excitation of surface with or without photon crystal structure.
Fig. 5 is the scintillator light output comparison diagram under excitation of X-rays of surface with or without photon crystal structure.
In figure, 1-photonic crystal, 101-photon crystal microstructure, 2-scintillator, 3-force plate, 301-forward microstructure, 4-negative template, the trans microstructure of 401-, 5-organic polymer.
Embodiment
Following examples are with reference to Fig. 1-5.
Embodiment 1.Scintillator photons crystal structure of the present invention comprises scintillator 2 and photon crystal 1, photon crystal 1 fits tightly the surface in scintillator 2, photon crystal 1 is made up of the photon crystal microstructure 101 being sexangle or quadrilateral periodic arrangement, and single photonic crystal microstructure 101 is column, taper, cuboid or polyhedron-shaped; Photon crystal microstructure 101 spacing is 200 ~ 2000nm, be highly 50 ~ 800nm, photon crystal microstructure 101 diameter of column type is 100 ~ 1000nm, the maximal side of the photon crystal microstructure 101 of taper is 100 ~ 1000nm, photon crystal microstructure 101 width of cuboid-type and length is 100 ~ 1000nm, photon crystal microstructure 101 length of side of polyhedral is 100 ~ 1000nm; Photon crystal 1 to be solidified by modes such as ultraviolet lighting, heating or irradiation by transparent organic polymer material and forms; Photon crystal microstructure 101 optimal size provides after optimizing calculating after scintillator 2 characteristics of luminescence and organic polymer material characteristic.
Embodiment 2.Concrete steps are progressively carried out according to (a) ~ (f) according to arrow instruction order.The first step, according to the material behavior of scintillator 2 and the last size of characteristics of luminescence design photon crystal microstructure 101, substrate makes, arrange rule identical forward microstructure 301 measure-alike with photon crystal microstructure 101, forms the force plate 3 of photon; Second step, the one side of forward microstructure 301 is had to apply one deck dimethyl silicone polymer (PDMS) at force plate 3, dimethyl silicone polymer naturally launches and fills up the gap between forward microstructure 301, and dimethyl silicone polymer thickness is greater than the height of forward microstructure 301; 3rd step, negative template 4 is formed after dimethyl silicone polymer spontaneous curing, form trans microstructure 401 after filling the dimethyl silicone polymer spontaneous curing in forward microstructure 301 gap, namely become negative template 4 after whole dimethyl siloxane solidification, negative template 4 and force plate 3 are separated; 4th step, at the organic polymer 5 of scintillator 2 surface coating layer of transparent, the thickness of organic polymer 5 is greater than the height of forward microstructure 301; 5th step, the one side of trans microstructure 401 is had by negative template 4 to be overlying on organic polymer 5, and make organic polymer 5 be full of the gap of trans microstructure 401 to the even pressure that applies of negative template 4, utilize ultraviolet lighting or heating or ray irradiation method to make organic polymer 5 curing molding; 6th step, maintain organic polymer 5 to fit tightly with scintillator 2, be separated with organic polymer 5 by negative template 4, be photon crystal microstructure 101 after being full of organic polymer 5 solidification in trans microstructure 401 gap, the organic polymer 5 after whole solidification is exactly the photon crystal 1 made.
The surfaceness making the substrate of force plate 3 is less than 1000nm.
The dimethyl silicone polymer thickness of force plate 3 upper is not less than forward microstructure 301 height of force plate 3; Organic polymer 5 thickness of the surperficial spin coating of scintillator 2 is not more than the height of the forward microstructure 301 of force plate 3.
Embodiment 3.Scintillator 2 is diameter 3cm, the thickness 1mm Plastic scintillation material EJ212 that ELJEN company of the U.S. produces; Photon crystal 1 is made up of the cylindric photon crystal microstructure 101 becoming hexagonal periodic to arrange, adjacent cylindrical photon crystal microstructure 101 spacing 600nm, single photonic crystal microstructure 101 diameter 300nm, height 310nm; The substrate material of force plate 3 is semiconductor silicon, and the forward microstructure 301 on it adopts electron beam lithography technique to make.Negative template 4 adopts the dimethyl silicone polymer spontaneous curing being coated in force plate 3 surface to be formed; At the PMMA photoresist that the organic polymer 5 of the surperficial spin coating of scintillator 2 is Britain EMResistLtd Company; Had by negative template 4 one side of trans microstructure 401 to be pressed on organic polymer 5, apply pressure to negative template 4, and adopt the mode of heating that organic polymer 5 is solidified, working temperature during solidification is 250 DEG C, and the solidification working time is 10min; Negative template 4 is separated with the organic polymer 5 (PMMA photoresist) after solidification, and maintain organic polymer 5 be close to scintillator 2 surface, originally defined photon crystal microstructure 101 after being packed into organic polymer 5 solidification in trans microstructure 401 gap, whole organic polymer is photon crystal 1.As can be seen from Figure 3, scintillator surface is photon crystal structure.
As can be seen from Figure 4, there are the scintillator 2 corresponding to scintillator and the photon crystal 1 thereof of photonic crystal in surface, without surface photon crystal structure scintillator refer to same batch produce, the Plastic scintillation material EJ212 of same size.Line centered by scintillation material EJ212 normal to a surface, within the scope of 0 ° ~ 60 °, experimental result shows that surface has scintillator 2 surface light of photon crystal 1 to export and been significantly enhanced, 0 ° of direction and normal direction light output enhance 52%, on the direction of 20 °, light output increases maximum, reaches 105%.
As can be seen from Figure 5, photon crystal 1 is consistent with scintillator 2 and Fig. 4.With scintillator 2 normal for benchmark, experimental result shows that scintillator 2 light output within the scope of-90 ° ~ 90 ° has significant enhancing, and 0 ° of direction and normal direction luminescence enhancement 60%, on the transmit direction of ± 20 °, light output strengthens maximum, reach 105%.
Embodiment 4.Scintillator 2 is diameter 2cm, the thickness 2mm yttrium silicate inorganic scintillation material that Shanghai silicate research institute produces; Photon crystal 1 is made up of the rectangular parallelepiped photon crystal microstructure 101 of quadrangularly periodic arrangement, adjacent cylindrical photon crystal microstructure 101 spacing 500nm, single photonic crystal microstructure 101 length of side 350nm, height 350nm; The substrate material of force plate 3 is semiconductor silicon, and the forward microstructure 301 on it adopts electron beam lithography technique to make.Negative template 4 adopts the dimethyl silicone polymer spontaneous curing being coated in force plate 3 surface to be formed; At the PMMA photoresist that the organic polymer 5 of the surperficial spin coating of scintillator 2 is Britain EMResistLtd Company; Had by negative template 4 one side of trans microstructure 401 to be pressed on organic polymer 5, apply pressure to negative template 4, and adopt the mode of UV-irradiation that organic polymer 5 is solidified, the ultraviolet lighting time is 15min; Negative template 4 is separated with the organic polymer 5 after solidification, and maintain organic polymer 5 be close to scintillator 2 surface, originally defined photon crystal microstructure 101 after being packed into organic polymer 5 solidification in trans microstructure 401 gap, whole organic polymer is photon crystal 1.
The scintillator surface photon crystal structure of this invention and method for making all applicable for the solid scintillator of other kinds, do not enumerate specific embodiment at this.
Claims (10)
1. a scintillator photons crystal structure, it is characterized in that: comprise scintillator (2) and photonic crystal (1), photonic crystal (1) fits tightly the surface in scintillator (2), photonic crystal (1) is made up of the photon crystal microstructure (101) being sexangle or quadrilateral periodic arrangement, and photonic crystal (1) is formed by ultraviolet lighting, heating or radiation mode solidification by transparent organic polymer material.
2. scintillator photons crystal structure according to claim 1, is characterized in that: described photon crystal microstructure (101) is any one of column type, taper, cuboid-type or polyhedral.
3. scintillator photons crystal structure according to claim 1, is characterized in that: described photon crystal microstructure (101) spacing is 200 ~ 2000nm, is highly 50 ~ 800nm.
4. scintillator photons crystal structure according to claim 1, is characterized in that: when described photon crystal microstructure (101) is column type, and its diameter is 100 ~ 1000nm.
5. scintillator photons crystal structure according to claim 1, is characterized in that: when described photon crystal microstructure (101) is taper, and its maximal side is 100 ~ 1000nm.
6. scintillator photons crystal structure according to claim 1, is characterized in that: when described photon crystal microstructure (101) is cuboid-type, and its width and length are 100 ~ 1000nm.
7. scintillator photons crystal structure according to claim 1, is characterized in that: when described photon crystal microstructure (101) is polyhedral, and its length of side is 100 ~ 1000nm.
8. a method for making for scintillator photons crystal structure described in claim 1, is characterized in that comprising the following steps:
Step one, electromagnetic action rule according to scintillator (2) fluorescence launched and medium, obtain the size with the photon crystal microstructure (101) of scintillator (2) characteristics of luminescence Optimum Matching, and the forward microstructure (301) measure-alike with the photon crystal microstructure (101) calculated is made on substrate, the substrate with forward microstructure (301) is force plate (3);
Step 2, there is surface casting one deck dimethyl silicone polymer of forward microstructure (301) at force plate (3), dimethyl silicone polymer naturally will launch and is full of the gap of forward microstructure (301), after waiting for dimethyl silicone polymer solidification, itself and force plate (3) are separated, obtain that a dimethyl silicone polymer is made, that one side has trans microstructure (401) negative template (4);
Step 3, organic polymer (5) in the surperficial spin coating layer of transparent of scintillator (2), negative template (4) is overlying on organic polymer (5) with the one side of trans microstructure (401), applying pressure to negative template (4) makes organic polymer (5) be full of the gap of trans microstructure (401), utilizes ultraviolet lighting, irradiation or heating means to make organic polymer (5) curing molding gradually;
Step 4, maintain organic polymer (5) and scintillator (2) intimate surface and fit, and negative template (4) is separated with the organic polymer (5) after solidification, namely organic polymer (5) solidification that filling enters trans microstructure (401) gap forms photon crystal microstructure (101), and the whole organic polymer (5) after solidification is photonic crystal (1).
9. the method for making of scintillator photons crystal structure according to claim 8, is characterized in that: the substrate of described making force plate (3), its surfaceness is less than 1000nm.
10. the method for making of scintillator photons crystal structure according to claim 8, is characterized in that: the dimethyl silicone polymer thickness that described force plate (3) is built is not less than the forward microstructure (301) of force plate (3) highly; Organic polymer (5) thickness of scintillator (2) surperficial spin coating is not more than the height of the forward microstructure (301) of force plate (3).
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| CN106054229A (en) * | 2016-05-20 | 2016-10-26 | 同济大学 | Scintillator device regulated and controlled by plasmon crystal |
| CN106094003A (en) * | 2016-05-20 | 2016-11-09 | 同济大学 | A kind of photonic crystal with composite structure scintillator |
| CN106842384A (en) * | 2017-03-13 | 2017-06-13 | 同济大学 | A kind of composite photonic crystal structure scintillator |
| CN108152848A (en) * | 2017-11-01 | 2018-06-12 | 同济大学 | A kind of micro-structure scintillation component with highlight extract efficiency |
| CN108594288A (en) * | 2018-04-25 | 2018-09-28 | 西北核技术研究所 | A kind of surface has the plastic scintillant and preparation method thereof of microlens array |
| CN109061711A (en) * | 2018-08-14 | 2018-12-21 | 同济大学 | Directional transmissions scintillation component with surface micro-structure array and preparation method thereof |
| CN109407139A (en) * | 2018-12-21 | 2019-03-01 | 苏州瑞派宁科技有限公司 | Combine scintillation crystal and radiation detector assembly and system including combining scintillation crystal |
| CN110976250A (en) * | 2019-12-26 | 2020-04-10 | 上海大学 | Scintillator preparation method |
| CN112716511A (en) * | 2020-12-21 | 2021-04-30 | 华中科技大学 | Novel scintillation crystal detector and design method and application thereof |
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| CN106054229A (en) * | 2016-05-20 | 2016-10-26 | 同济大学 | Scintillator device regulated and controlled by plasmon crystal |
| CN106094003A (en) * | 2016-05-20 | 2016-11-09 | 同济大学 | A kind of photonic crystal with composite structure scintillator |
| CN106094003B (en) * | 2016-05-20 | 2018-05-08 | 同济大学 | A kind of photonic crystal with composite structure scintillator |
| CN106842384A (en) * | 2017-03-13 | 2017-06-13 | 同济大学 | A kind of composite photonic crystal structure scintillator |
| CN106842384B (en) * | 2017-03-13 | 2018-08-24 | 同济大学 | A kind of composite photonic crystal structure scintillator |
| CN108152848A (en) * | 2017-11-01 | 2018-06-12 | 同济大学 | A kind of micro-structure scintillation component with highlight extract efficiency |
| CN108594288A (en) * | 2018-04-25 | 2018-09-28 | 西北核技术研究所 | A kind of surface has the plastic scintillant and preparation method thereof of microlens array |
| CN109061711A (en) * | 2018-08-14 | 2018-12-21 | 同济大学 | Directional transmissions scintillation component with surface micro-structure array and preparation method thereof |
| CN109061711B (en) * | 2018-08-14 | 2022-08-16 | 同济大学 | Directional emission scintillator device with surface microstructure array and preparation method thereof |
| CN109407139A (en) * | 2018-12-21 | 2019-03-01 | 苏州瑞派宁科技有限公司 | Combine scintillation crystal and radiation detector assembly and system including combining scintillation crystal |
| CN109407139B (en) * | 2018-12-21 | 2024-03-22 | 苏州瑞派宁科技有限公司 | Combined scintillation crystal and radiation detection device and system comprising same |
| CN110976250A (en) * | 2019-12-26 | 2020-04-10 | 上海大学 | Scintillator preparation method |
| CN110976250B (en) * | 2019-12-26 | 2021-10-08 | 上海大学 | Scintillator preparation method |
| CN112716511A (en) * | 2020-12-21 | 2021-04-30 | 华中科技大学 | Novel scintillation crystal detector and design method and application thereof |
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