CN105048785A - Voltage equalizing control circuit of high voltage inverter - Google Patents
Voltage equalizing control circuit of high voltage inverter Download PDFInfo
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- CN105048785A CN105048785A CN201510397731.9A CN201510397731A CN105048785A CN 105048785 A CN105048785 A CN 105048785A CN 201510397731 A CN201510397731 A CN 201510397731A CN 105048785 A CN105048785 A CN 105048785A
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Abstract
The present invention provides a voltage equalizing control circuit of a high voltage inverter. The voltage equalizing control circuit is characterized in that the voltage equalizing control circuit comprises multiple sub circuits in cascade, each of the sub circuits comprises a transistor, two dynamic voltage equalizing capacitors which are connected in series are arranged between the collector and the emitter of the transistor, the two dynamic voltage equalizing capacitors are a first capacitor and a second capacitor, the connection point of the two dynamic voltage equalizing capacitors is an A point, the gate of the transistor is connected to the A point, and a driving circuit is connected to the gate of the transistor. According to the voltage equalizing control circuit, a transistor gate auxiliary circuit is formed, the gate load of the transistor with first turn-off and second turn-on is adjusted and controlled through the transistor gate auxiliary circuit, the voltage balance of the transistor in a turn-off instant and a turn-on instant is realized, the damage of a whole series cascade transistor module caused by the overvoltage of a single transistor is solved, and the stability of the whole inverter output is improved. The voltage equalizing control circuit has the advantages of fast response speed, low power consumption and excellent static and dynamic voltage characteristics.
Description
Technical field
The invention belongs to frequency converter field, be specifically related to a kind of voltage-equalizing control circuit of high voltage converter.
Background technology
Transistor has the advantages such as on-state voltage drop is low, operating rate is fast, drive circuit is simple, in Electric Machine Control, intermediate frequency and Switching Power Supply, and requires to be widely used in quick, low-loss field.Although the current capacity of transistor and electric pressure improve constantly, (the maximum amount definite value of current commercialization transistor modular is 3300V, 1200A), but the withstand voltage of single transistor still can not meet the demands in the high-tension application scenario of Large Copacity (high voltage converter), want in the field of more high pressure, use transistor just to need transistor modular to be together in series for this reason, sometimes inverter is even needed to connect, to form the higher convertor assembly of electric pressure, similar application is in high voltage converter.
Transistor generally has four kinds of operating states, namely blocking state (stablizing off-state), open transient state, conducting state (stablizing on-state), turn off transient state.Wherein blocking state and conducting state are static processes, and opening transient state and turning off transient state is dynamic process.The transistor of series connection cascade, due to the static volt ampere of each single transistor and the difference of dynamic parameter, will cause voltage distribution between each device uneven and produce overvoltage balance phenomenon, and causing the damage of transistor device, even damage high-tension apparatus.The present invention is exactly the improvement carried out for this defect, provides a kind of starting with from transistor gate to carry out the control circuit of passive equalizing control.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of voltage-equalizing control circuit of high voltage converter, there is fast response time, lower power loss and good Static and dynamic and all press characteristic.
For achieving the above object, technical scheme of the present invention is as follows: a kind of voltage-equalizing control circuit of high pressure frequency power transformer, it is characterized in that: a plurality of electronic circuits comprising cascade of connecting successively, each described electronic circuit includes the transistor V by drive circuit driving work, dynamic voltage balancing electric capacity is provided with between the collector and emitter of described transistor V, described dynamic voltage balancing electric capacity has two that are arranged in series, and is respectively
First electric capacity C1 and the second electric capacity C2, the tie point described in two between dynamic voltage balancing electric capacity is A point, and the grid of described transistor is connected with A point, and described drive circuit connects the grid of transistor V.
In a preferred embodiment of the present invention, comprise further between the grid of described transistor V and A point and be also provided with diode D, the positive pole of described diode connects A point, and its negative pole connects the grid of described transistor V.
In a preferred embodiment of the present invention, static divider resistance is provided with between the collector and emitter comprising described transistor V further, described static divider resistance has two that are arranged in series, be respectively the first resistance R1 and the second resistance R2, tie point described in two between static divider resistance is B point, and B point is connected with A point.
In a preferred embodiment of the present invention, the grid comprising described transistor V is further provided with grid shunt resistance, described grid shunt resistance is two that are arranged in parallel, be respectively first grid resistance Rg1 and second grid resistance Rg2, between the grid that described first grid resistance Rg1 is arranged on transistor V and drive circuit, described second grid resistance Rg2 is arranged between the grid of transistor V and diode D.
In a preferred embodiment of the present invention, comprise further between the grid of described transistor V and emitter and be provided with clamp diode Dz.
In a preferred embodiment of the present invention, comprise a plurality of described electronic circuit entirety after cascade of connecting successively further and be also in series with load inductance L and load resistance R
l.
In a preferred embodiment of the present invention, comprise described load inductance and load resistance R further
ltwo ends after series connection are also parallel with sustained diode
l.
The invention has the beneficial effects as follows: the voltage-equalizing control circuit that the invention provides a kind of high voltage converter, transistor formed grid auxiliary circuit, by grid auxiliary circuit to first to turn off and the gate charge of the rear transistor opened carries out regulation and control, realize transistor at the balance of voltage opening moment and shutdown moment, solve the damage of the whole module that series cascode transistors module causes because of the overvoltage of single transistor, improve the stability that whole frequency converter exports.There is fast response time, lower power loss and good Static and dynamic and all press characteristic.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in embodiment of the present invention technology, be briefly described to the accompanying drawing used required in the description of embodiment technology below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the circuit diagram of the preferred embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment
As shown in Figure 1, disclose a kind of voltage-equalizing control circuit of high voltage converter in the present embodiment, comprise a plurality of electronic circuits of cascade of connecting successively, for convenience of description, preferably adopt two electronic circuits to be described in the present embodiment, be respectively the first electronic circuit and the second electronic circuit:
First electronic circuit comprises: the first drive circuit M1, the first transistor V1, two dynamic voltage balancing electric capacity C1, C2, two static divider resistance R1, R2, first grid diode Dg1, a first clamp diode Dz1, two grid shunt resistances Rg1, Rg2.
Two dynamic capacity C1, C2 connects, tie point is between the two A1 point, two static divider resistance R1, R2 connects, tie point is between the two B1, two dynamic capacity C1, with two that connect static divider resistance R1 after C2 series connection, R2 is in parallel, be arranged between the collector electrode C of the first transistor V1 and emitter E after parallel connection, A1 with B1 is connected simultaneously, by first grid diode Dg1 after A1 with B1 is connected, grid shunt resistance Rg2 is connected to the grid G of the first transistor V1, the forward end of first grid diode Dg1 connects B1 point, its negative pole end connects grid shunt resistance Rg2, first drive circuit is connected to the grid G of the first transistor V1 by grid shunt resistance Rg1, the first clamp diode Dz1 is provided with between the grid G of the first transistor V1 and emitter E.
Second electronic circuit comprises: the second drive circuit M2, transistor seconds V2, two dynamic voltage balancing electric capacity C3, C4, two static divider resistance R3, R4, second grid diode Dg2, a second clamp diode Dz2, two grid shunt resistances Rg3, Rg4.
Two dynamic capacity C3, C4 connects, tie point is between the two A2 point, two static divider resistance R3, R4 connects, tie point is between the two B2, two dynamic capacity C3, with two that connect static divider resistance R3 after C4 series connection, R4 is in parallel, be arranged between the collector electrode C of transistor seconds V2 and emitter E after parallel connection, A2 with B2 is connected simultaneously, by second grid diode Dg2 after A2 with B2 is connected, grid shunt resistance Rg4 is connected to the grid G of transistor seconds V2, the forward end of second grid diode Dg2 connects B2 point, its negative pole end connects grid shunt resistance Rg4, second drive circuit is connected to the grid G of transistor seconds V2 by grid shunt resistance Rg3, the second clamp diode Dz2 is provided with between the grid G of transistor seconds V2 and emitter E.
The electronic circuit structure forming the voltage-equalizing control circuit of high voltage converter of the present invention is all identical.
Entirety after two sub-circuit connected in series cascades is also in series with load inductance L and load resistance R
l, described load inductance L and load resistance R
ltwo ends after series connection are also parallel with sustained diode
l.
Based on above-mentioned circuit structure, the operation principle realizing Pressure and Control of the present invention is as follows: set voltage on C1, C3 as U
e/ 2, C1, C3 are identical and much larger than C2, C4, therefore can think that C1, C3 are constant pressure source, and suppose that transistor seconds V2 is open-minded prior to the first transistor V1, the first transistor V2 turns off prior to the first transistor V1, then the course of work of voltage-equalizing control circuit is divided into following several stages:
(1) when the first transistor V1 and transistor seconds V2 opens completely, if ignore tube voltage drop, then the terminal voltage of the first transistor V1 and transistor seconds V2 is zero.Because the voltage on C1, C3 is U
e/ 2, the voltage therefore on C2, C4 is charged to-U by counter
e/ 2, gated diode Dg1, Dg2 are reverse-biased;
(2) grid voltage starts decline the first transistor V1 and transistor seconds V2 is turned off, and while collector circuit declines, the current potential on collector electrode starts to rise, but the rising of the first transistor V1 terminal voltage is later than transistor seconds V2;
(3) due to the first transistor V1 terminal voltage lower than transistor seconds V2 terminal voltage and the two is all lower than U
e/ 2, so the terminal voltage of the first transistor V1 and transistor seconds V2 continues to increase, when
The terminal voltage of transistor seconds V2 is more than U
ewhen/2, the voltage of C4 becomes upper just lower negative, this voltage is added on the grid of transistor seconds V2 by gated diode Dg2 and grid shunt resistance Rg4, if now this voltage has exceeded the cut-in voltage of transistor seconds V2, then transistor seconds V2 is in micro-logical state and makes the terminal voltage of transistor seconds V2 start to decline, the terminal voltage of the first transistor V1 rises fast simultaneously, after the voltage drop of C4 is below cut-in voltage, be that transistor seconds V2 turns off again, finally make the terminal voltage on the first transistor V1 and transistor seconds V2 maintain U
eon/2, complete dynamic turn off process;
(4) when the first transistor V1 and transistor seconds V2 turns off completely, U is born respectively
ethe forward blocking voltage of/2, the electric current now in load inductance L passes through sustained diode
lwith load resistance R
lafterflow, completes whole turn off process;
(5) as the first transistor V1 and transistor seconds V2 conducting, conducting as first in transistor seconds V2, conducting after the first transistor V1, because the first conducting of transistor seconds V2 makes the terminal voltage of the first transistor V1 rise rapidly, when the terminal voltage of the first transistor V1 is more than U
ewhen/2, voltage on electric capacity C2 becomes upper just lower negative, this voltage is added on the grid of the first transistor V1 by gated diode Dg1 and grid shunt resistance Rg2, the first transistor V1 is made to accelerate conducting, thus the terminal voltage of the first transistor V1 is declined fast, achieve the balance of voltage of the first transistor V1 and transistor seconds V2 conducting moment.Separately, in the first transistor V1 and transistor seconds V2 conducting moment, the existence due to load inductance L makes on state current not suddenly change, and improves di/dt when series crystal tube module is opened, thus the turn-on consumption of transistor is reduced greatly;
(6) when the complete conducting of the first transistor V1 and transistor seconds V2, the terminal voltage of the first transistor V1 and transistor seconds V2 is that the voltage of zero, C2 gets back to-U again
e/ 2, complete the Pressure and Control of one-period.
Above-mentioned is only be restricted to two for the convenience described to electronic circuit of the present invention, but this does not form restriction of the present invention.
The invention provides a kind of voltage-equalizing control circuit of high voltage converter, transistor formed grid auxiliary circuit, by grid auxiliary circuit to first turn off and the gate charge of the rear transistor opened carry out adjustment with
Control, realize transistor and opening moment and the balance of voltage of shutdown moment, solve the damage of the whole module that series cascode transistors module causes because of the overvoltage of single transistor, improve the stability of whole frequency converter output.There is fast response time, lower power loss and good Static and dynamic and all press characteristic.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. the voltage-equalizing control circuit of a high pressure frequency power transformer, it is characterized in that: a plurality of electronic circuits comprising cascade of connecting successively, each described electronic circuit includes by the transistor of drive circuit driving work (V), dynamic voltage balancing electric capacity is provided with between the collector and emitter of described transistor (V), described dynamic voltage balancing electric capacity has two that are arranged in series, be respectively the first electric capacity (C1) and the second electric capacity (C2), tie point described in two between dynamic voltage balancing electric capacity is A point, the grid of described transistor is connected with A point, described drive circuit connects the grid of transistor (V).
2. the voltage-equalizing control circuit of a kind of high pressure frequency power transformer according to claim 1, it is characterized in that: between the grid of described transistor (V) and A point, be also provided with diode (D), the positive pole of described diode connects A point, and its negative pole connects the grid of described transistor (V).
3. the voltage-equalizing control circuit of a kind of high pressure frequency power transformer according to claim 1, it is characterized in that: between the collector and emitter of described transistor (V), be provided with static divider resistance, described static divider resistance has two that are arranged in series, be respectively the first resistance (R1) and the second resistance (R2), tie point described in two between static divider resistance is B point, and B point is connected with A point.
4. the voltage-equalizing control circuit of a kind of high pressure frequency power transformer according to claim 2, it is characterized in that: the grid of described transistor (V) is provided with grid shunt resistance, described grid shunt resistance is two that are arranged in parallel, be respectively first grid resistance (Rg1) and second grid resistance (Rg2), between the grid that described first grid resistance (Rg1) is arranged on transistor (V) and drive circuit, described second grid resistance (Rg2) is arranged between the grid of transistor (V) and diode (D).
5. the voltage-equalizing control circuit of a kind of high pressure frequency power transformer according to claim 1, is characterized in that: be provided with clamp diode (Dz) between the grid of described transistor (V) and emitter.
6. the voltage-equalizing control circuit of a kind of high pressure frequency power transformer according to any one of claim 1-5, is characterized in that: a plurality of described electronic circuit entirety after cascade of connecting successively is also in series with load inductance (L) and load resistance (R
l).
7. the voltage-equalizing control circuit of a kind of high voltage converter according to claim 6, is characterized in that: described load inductance and load resistance (R
l) two ends after series connection are also parallel with fly-wheel diode (D
l).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510397731.9A CN105048785A (en) | 2015-07-08 | 2015-07-08 | Voltage equalizing control circuit of high voltage inverter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510397731.9A CN105048785A (en) | 2015-07-08 | 2015-07-08 | Voltage equalizing control circuit of high voltage inverter |
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| Publication Number | Publication Date |
|---|---|
| CN105048785A true CN105048785A (en) | 2015-11-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510397731.9A Pending CN105048785A (en) | 2015-07-08 | 2015-07-08 | Voltage equalizing control circuit of high voltage inverter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105978300A (en) * | 2016-07-13 | 2016-09-28 | 西安交通大学 | Cascading type high-voltage solid-state switch |
| CN107248857A (en) * | 2017-05-27 | 2017-10-13 | 浙江大学 | A kind of IGBT series connection compound equalizer circuit of gate electrode side and load-side control |
| CN110492727A (en) * | 2019-07-18 | 2019-11-22 | 武汉大学 | A kind of driving circuit for IGBT series average-voltage |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6320362B1 (en) * | 1999-11-26 | 2001-11-20 | Korea Electrotechnology Research Institute | Passive auxiliary circuit for series connection of a power switch |
| CN2785244Y (en) * | 2005-03-16 | 2006-05-31 | 刘文辉 | IGBT series connection operating voltage average compensating circuit |
| CN202260996U (en) * | 2011-10-17 | 2012-05-30 | 湖州电力局 | Driving circuit of series-connection insulated gate bipolar transistor (IGBT) |
| CN202940722U (en) * | 2012-11-30 | 2013-05-15 | 南京南瑞继保电气有限公司 | Dynamic/static voltage-sharing circuit with voltage overshoot threshold limit for series connection of IGBTs |
-
2015
- 2015-07-08 CN CN201510397731.9A patent/CN105048785A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6320362B1 (en) * | 1999-11-26 | 2001-11-20 | Korea Electrotechnology Research Institute | Passive auxiliary circuit for series connection of a power switch |
| CN2785244Y (en) * | 2005-03-16 | 2006-05-31 | 刘文辉 | IGBT series connection operating voltage average compensating circuit |
| CN202260996U (en) * | 2011-10-17 | 2012-05-30 | 湖州电力局 | Driving circuit of series-connection insulated gate bipolar transistor (IGBT) |
| CN202940722U (en) * | 2012-11-30 | 2013-05-15 | 南京南瑞继保电气有限公司 | Dynamic/static voltage-sharing circuit with voltage overshoot threshold limit for series connection of IGBTs |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105978300A (en) * | 2016-07-13 | 2016-09-28 | 西安交通大学 | Cascading type high-voltage solid-state switch |
| CN107248857A (en) * | 2017-05-27 | 2017-10-13 | 浙江大学 | A kind of IGBT series connection compound equalizer circuit of gate electrode side and load-side control |
| CN110492727A (en) * | 2019-07-18 | 2019-11-22 | 武汉大学 | A kind of driving circuit for IGBT series average-voltage |
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Application publication date: 20151111 |
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