CN105047725A - Near infrared detector based on resonance tunneling effect - Google Patents
Near infrared detector based on resonance tunneling effect Download PDFInfo
- Publication number
- CN105047725A CN105047725A CN201510308843.2A CN201510308843A CN105047725A CN 105047725 A CN105047725 A CN 105047725A CN 201510308843 A CN201510308843 A CN 201510308843A CN 105047725 A CN105047725 A CN 105047725A
- Authority
- CN
- China
- Prior art keywords
- near infrared
- infrared detector
- tunneling effect
- resonance tunneling
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 24
- 230000005641 tunneling Effects 0.000 title claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
- H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a near infrared detector based on a resonance tunneling effect. The major structure of the near infrared detector is a resonance tunneling diode, yet a double-barrier structure frequently used by the resonance tunneling diode is changed to a three-barrier structure, so that shot noise of the detector is inhibited, and an absorption layer is grown in an epitaxial mode between the three-barrier structure and a collector electrode. According to the invention, positive bias is applied when the detector works, near infrared light is incident from the collector electrode, a photoproduction electron-hole pair is generated at the absorption layer, and a photoproduction hole drifts towards the direction of the three-barrier structure under the effect of an electric field and is accumulated at the interface between the double-barrier structure and the absorption layer, such that electric potential at the two sides of the three-barrier structure is changed. The detector provided by the invention has quite high responsibility at a room temperature.
Description
Technical field
The present invention relates near infrared detector, be specifically related to a kind of based on resonance tunneling effect, the high sensitivity near infrared detector device structure design that can at room temperature work.
Background technology
The detection of high sensitivity near infrared light has broad application prospects in lll night vision, precise guidance, laser three-dimensional imaging, space remote sensing etc., especially along with the develop rapidly of quantum information technology in the last few years, more and more higher requirement is proposed to the optical detector technology of 1310nm and 1550nm wave band.At present, type photodetector mainly avalanche diode comparatively is widely used near infrared band, its working mechanism is based on the doubling effect of photo-generated carrier in multiplication region, in order to realize higher sensitivity, avalanche diode needs to work in Geiger mode angular position digitizer, this needs very high operating voltage, and inevitably will increase excess noise and afterpulse counting.Therefore, the exploration of high-performance novel photodetector and research, have necessity and urgency very much.
In recent years, multiple research groups are all over the world studied the optical detection based on resonance tunneling effect, they add absorbed layer and quantum dot layer in resonance tunnel-through diode, photo-generate electron-hole pair is produced after incident light is absorbed by the absorption layer, photohole drifts to quantum dot layer and is caught by quantum dot, this, by the electromotive force of regulation and control double potential barrier both sides, causes the change of tunnelling current.Compare the single-photon detector of traditional type, based on the photodetector of resonance tunneling effect in operating voltage, quantum efficiency, dark counting etc., all there is unique advantage.In order to strengthen quantum dot to the constraint effect of photohole and restraint speckle, such detector often needs very low working temperature, this greatly limits the application of the type detector.
Summary of the invention
(1) technical problem that will solve
For the restraining factors that existing structure exists, the invention provides a kind of based on resonance tunneling effect, the high sensitivity photodetector device architecture that can at room temperature work.
The agent structure of the near infrared detector structure designed by the present invention is a resonance tunnel-through diode, but the dual potential barrier structure usually adopted by resonance tunnel-through diode changes to three barrier structures, be designed to substrate, electrode, emitter, separator, barrier layer, quantum well, barrier layer, quantum well, barrier layer, absorbed layer, collector electrode and electrode successively along epitaxial growth direction.
The preparation method of the near infrared detector structure designed by the present invention is: the material layer first adopting molecular beam epitaxy technique growth detector, need before growth first to carry out degasification and deoxidation treatment to substrate, epitaxially grown order is: emitter (N-shaped heavy doping), separator (undoping), barrier layer (undoping), quantum well (undoping), barrier layer (undoping), quantum well (undoping), barrier layer (undoping), absorbed layer (undoping), collector electrode (N-shaped heavy doping).Wherein absorber thickness scope is 0.1-2 μm, and employing material is InGaAs.The thickness range of separator is 2-20nm, and the thickness range of barrier layer is 1-7nm, and the thickness range of quantum well is 1-7nm.In three barrier structures, the potential well thickness near collector electrode side is less than the potential well thickness near emitter side.Then adopt lithographic technique to form table top, and adopt SiO
2passivation is carried out to device side wall, forms photosurface by wet etching in top device.
Metal sputtering and lift-off technology is finally adopted to form electrode.
Forward bias is added during detector work, near infrared light is incident from collector electrode, and produce photo-generate electron-hole pair at absorbed layer, light induced electron is to the drift of collector electrode direction under electric field action, and photohole drifts about, owing to being subject to the stop of hole barrier to three barrier structure directions under electric field action, photohole is piled up in the interface of dual potential barrier structure and absorbed layer, this is by the electromotive force of change three barrier structure both sides, and then increases tunnelling current, produces the detectable signal of telecommunication.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
(1) by dual potential barrier structure is changed to three barrier structures, the shot noise of detector is reduced;
(2) detector carries out optical detection based on resonance tunneling effect, can at room temperature maintain very high responsiveness;
(3) agent structure of the present invention is resonance tunnel-through diode, and this is a kind of common component in circuit, and therefore the present invention is convenient to other opto-electronic device integrated.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is the structure chart of the high sensitivity near infrared detector based on resonance tunneling effect;
Fig. 2 is the fundamental diagram of the high sensitivity near infrared detector based on resonance tunneling effect;
Fig. 3 a adopts the volt-ampere characteristic of sample when there being illumination that described in Fig. 1 prepared by structure;
Fig. 3 b adopts the volt-ampere characteristic of sample when unglazed photograph that described in Fig. 1 prepared by structure.
Embodiment
It should be noted that, the implementation not illustrating in accompanying drawing or describe, is form known to a person of ordinary skill in the art in art.In addition, although herein can providing package containing the demonstration of the parameter of particular value, should be appreciated that, parameter without the need to definitely equaling corresponding value, but can be similar to corresponding value in acceptable error margin or design constraint.In addition, the direction term mentioned in following examples is only the direction with reference to accompanying drawing.Therefore, the direction term of use is used to illustrate and is not used for limiting the present invention.
In one exemplary embodiment of the present invention, provide a kind of employing molecular beam epitaxy technique, structure according to Fig. 1, prepares the method for high sensitivity near infrared detector.
First InP substrate 1 Epitaxial growth thickness be 100nm, doping content is 2 × 10
18cm
-3n-shaped In
0.53ga
0.47as, as emitter 2, then grows the In of 20nm
0.53ga
0.47as separator 3, next grows 5MLAlAs barrier layer 4,8nmIn successively
0.53ga
0.47as quantum well 5,5MLAlAs barrier layer 4,5nmIn
0.53ga
0.47as quantum well 6 and 5MLAlAs barrier layer 4 form three barrier structures, then grow the In of 1000nm
0.53ga
0.47as absorbed layer 7, then growth thickness is 100nm, doping content is 1 × 10
18-2 × 10
18cm
-3n-shaped In
0.53ga
0.47as, as collector electrode 11, peels off Au finally by sputtering after photoetching and forms annular upper electrode 9 and bottom electrode 10.
Based on the high sensitivity near infrared detector of resonance tunneling effect detection mechanism as shown in Figure 2, detector work time add forward bias, near infrared light, after collector electrode 8 incidence, is absorbed at absorbed layer 7 and is produced light induced electron 11 and photohole 12.Light induced electron 11 is to the drift of collector electrode 8 direction under electric field action, and photohole 12 drifts about to emitter 2 direction under electric field action.Owing to being subject to the stop of AlAs barrier layer 4, photohole 12 is piled up in the interface of absorbed layer 7 and AlAs barrier layer 4, and this is by the electromotive force of change three barrier structure both sides, and then increases tunnelling current, produces the detectable signal of telecommunication.
In order to verify effect of the present invention, applicant tests detector photoresponse at room temperature.Fig. 3 a, 3b be adopt structure institute described in Fig. 1 grow sample having, unglazed photograph time volt-ampere characteristic, during test, the incident optical power of detector photosurface is 0.5pW.Can draw by calculating, when device bias is 0.44V, the optical responsivity of detector is 1.7 × 10
8a/W.And in report abroad, adopt GaAs/AlGaAs/GaAs dual potential barrier structure and GaInNAs absorbed layer, and after adopting resonant cavity enhancing technology, it is at room temperature 3.1 × 10 to the responsiveness of pW magnitude incident light
4a/W.[list of references: AndreasPfenning, etl.Cavity-enhancedresonanttunnelingphotodetectorattelec ommunication.wavelengths.APPLIEDPHYSICSLETTERS104,101109 (2014)]
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. the near infrared detector based on resonance tunneling effect, the agent structure of detector is resonance tunnel-through diode, it is characterized in that: resonance tunnel-through diode has three barrier structures, be designed to substrate, electrode, emitter, separator, barrier layer, quantum well, barrier layer, quantum well, barrier layer, absorbed layer, collector electrode and electrode successively along epitaxial growth direction.
2., as claimed in claim 1 based on the near infrared detector of resonance tunneling effect, it is characterized in that: wherein absorber thickness scope is 0.1-2 μm, employing material is InGaAs.
3., as claimed in claim 1 based on the near infrared detector of resonance tunneling effect, it is characterized in that: wherein launch very N-shaped heavy doping, separator and barrier layer undope, and quantum well and absorbed layer undope, current collection very N-shaped heavy doping.
4. as claimed in claim 3 based on the near infrared detector of resonance tunneling effect, it is characterized in that: wherein in three barrier structures, the potential well thickness near collector electrode side is less than the potential well thickness near emitter side.
5. as claimed in claim 1 based on the preparation method of the near infrared detector of resonance tunneling effect, it is characterized in that: the material layer first adopting molecular beam epitaxy technique growth detector, epitaxially grown order is: emitter, separator, barrier layer, quantum well, barrier layer, quantum well, barrier layer, absorbed layer and collector electrode;
Then adopt lithographic technique to form table top, and adopt SiO
2passivation is carried out to device side wall, forms photosurface by wet etching in top device;
Metal sputtering and lift-off technology is finally adopted to form electrode.
6., as claimed in claim 5 based on the preparation method of the near infrared detector of resonance tunneling effect, wherein absorber thickness scope is 0.1-2 μm, and employing material is InGaAs.
7., as claimed in claim 5 based on the preparation method of the near infrared detector of resonance tunneling effect, wherein, the thickness range of separator is 2-20nm, and the thickness range of barrier layer is 1-7nm, and quantum well thickness scope is 1-7nm.
8., as claimed in claim 7 based on the preparation method of the near infrared detector of resonance tunneling effect, wherein, in three barrier structures, the potential well thickness near collector electrode side is less than the potential well thickness near emitter side.
9., as claimed in claim 8 based on the preparation method of the near infrared detector of resonance tunneling effect, wherein, launch very N-shaped heavy doping, separator and barrier layer undope, and quantum well and absorbed layer undope, current collection very N-shaped heavy doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510308843.2A CN105047725A (en) | 2015-06-08 | 2015-06-08 | Near infrared detector based on resonance tunneling effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510308843.2A CN105047725A (en) | 2015-06-08 | 2015-06-08 | Near infrared detector based on resonance tunneling effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105047725A true CN105047725A (en) | 2015-11-11 |
Family
ID=54454113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510308843.2A Pending CN105047725A (en) | 2015-06-08 | 2015-06-08 | Near infrared detector based on resonance tunneling effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105047725A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019196008A1 (en) * | 2018-04-10 | 2019-10-17 | 雄安华讯方舟科技有限公司 | Resonant tunneling diode wafer structure having high peak-to-valley current ratio, and preparation method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120309113A1 (en) * | 2006-09-27 | 2012-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures |
| CN104659145A (en) * | 2015-03-06 | 2015-05-27 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
-
2015
- 2015-06-08 CN CN201510308843.2A patent/CN105047725A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120309113A1 (en) * | 2006-09-27 | 2012-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures |
| CN104659145A (en) * | 2015-03-06 | 2015-05-27 | 中国科学院半导体研究所 | Resonant tunneling diode based high-sensitivity detector with low dark current |
Non-Patent Citations (2)
| Title |
|---|
| GYUNGOCK KIM ET AL: "Evidence of the enhanced resonant tunneling effect in a triple-barrier heterostructure", 《SUPERLATTICES AND MICROSTRUCTURES》 * |
| H.C. LIU ET AL: "Intersubband Transitions in Quantum Wells And Triple-Barrier Diode Infrared detector concepts", 《SUPERLATTICES AND MICROSTRUCTURES》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019196008A1 (en) * | 2018-04-10 | 2019-10-17 | 雄安华讯方舟科技有限公司 | Resonant tunneling diode wafer structure having high peak-to-valley current ratio, and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Miao et al. | Avalanche photodetectors based on two-dimensional layered materials | |
| Decoster et al. | Optoelectronic sensors | |
| CN103545398B (en) | The double-heterojunctiophototransistor phototransistor detector of the unidirectional carrier transport of base district gradual change | |
| CN106299015B (en) | A kind of avalanche semiconductor photodetector using low-dimensional quantum point dynode layer | |
| CN105720130A (en) | Photoelectric detector based on quantum well inter-band | |
| US9748430B2 (en) | Staircase avalanche photodiode with a staircase multiplication region composed of an AIInAsSb alloy | |
| CN102820365A (en) | Semiconductor infrared up-conversion single photon detection equipment and method | |
| JPH022691A (en) | Semiconductor light receiving device | |
| CN104900731A (en) | Infrared photoelectric detector and manufacturing method thereof | |
| CN105957908A (en) | Multiplication region controlled avalanche photodiode and manufacturing method thereof | |
| KR100463416B1 (en) | Avalanche phototransistor | |
| JP2998375B2 (en) | Avalanche photodiode | |
| CN104659145A (en) | Resonant tunneling diode based high-sensitivity detector with low dark current | |
| CN105097964B (en) | A kind of active area Gauss doping type p π n ultraviolet detector | |
| CN113540273A (en) | High-speed high-gain avalanche photodetector and preparation method thereof | |
| TWI595678B (en) | Light detecting element | |
| US8143648B1 (en) | Unipolar tunneling photodetector | |
| CN101814545B (en) | InAs/GaSb superlattice infrared photoelectric detector for HPT (Hydrogenated Propylene Tetramer) structure | |
| CN105047725A (en) | Near infrared detector based on resonance tunneling effect | |
| Weng et al. | Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors | |
| JPS61229371A (en) | Photo diode | |
| CN104505421A (en) | Avalanche photodiode with self-extinguishing self-recovery function | |
| CN211700284U (en) | Infrared detector integrated with photovoltaic cell structure | |
| JP4927911B2 (en) | Quantum dot photodetector | |
| JP6206834B2 (en) | Quantum dot type high-speed photodiode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151111 |