CN105044812A - Double-layer asymmetric subwavelength dielectric grating Terahertz isolator - Google Patents
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Abstract
The invention discloses a double-layer asymmetric subwavelength dielectric grating Terahertz isolator. According to the invention, a double-layer asymmetric subwavelength dielectric grating structure is used; through different guided-mode resonance and a first-level diffraction effect in a subwavelength grating with different front and rear structures, forward and reverse transmission optical paths of a THz wave which normally comes into the grating are asymmetric, and one-way isolation transmission is realized. The maximum isolation degree of the device is close to 20dB, and the forward transmission loss is less than 5dB. Compared with a conventional magneto-optical isolator, the device has the advantages that an external magnetic field is not used; the device does not have special work temperature and environment requirements; and the usefulness of the device is greatly improved. Compared with a metal grating, the used dielectric grating has the advantage that material loss and insertion loss of the device are reduced. According to the device, two different dielectric gratings are skillfully encapsulated through ultraviolet glue; the service life and the stability of the device are improved; and the device can be applied to terahertz spectroscopy, imaging, communication, radar and other systems.
Description
Technical field
The invention belongs to Terahertz science and technology field, be specifically related to a kind of THz wave isolator and method of work thereof.
Background technology
Terahertz (THz, 1THz=10
12tHz) ripple refers to the electromagnetic wave of frequency in 0.1-10THz (corresponding wavelength is 3mm ~ 30 μm) scope, and this wave band, between microwave and light wave, is the crossing domain of electronics and photonics.Due to the specific position that it is residing in electromagnetic wave spectrum, THz wave has many advantageous characteristic such as perspectivity, security, high s/n ratio, has very important science and using value in spectrum, imaging and the field such as to communicate.Isolator is Two-port netwerk nonreciprocal device, forward light is allowed to pass through device efficiently, and forbid light back through, it is the Primary Component in all multi-application system such as communication, radar, be mainly used in the inter-stage isolation between device cell, impedance matching, decoupling, in anti-locking system, reflection echo and scattering cause the damage of active device, reduce the additional noise that echo brings, and improve system stability, reliability.But due to for a long time terahertz wave band lack be applicable to low-loss, broadband one-way transmission device, as isolator, circulator etc., in Terahertz application system, the reflection echo of element and scattered noise seriously limit the performance of system.
The performance of isolator decides primarily of two aspects: one be forward transmission time transmitance T
for, high forward transmitance brings low insertion loss; Two is transmitance T of backward wave
backwith the ratio of forward wave transmitance, i.e. isolation, is expressed as Iso=-10log (T
back/ T
for), backward wave is less, forward wave is larger, and isolation is larger, and the one-way transmission ability of device is stronger.
Isolator is usually needed to introduce magneto-optic memory technique in the devices and could be realized by the nonreciprocal transmission of light, because the nonreciprocal material at terahertz wave band with magneto-optical response is very limited, Terahertz one-way transmission device rarely has report in the past, up to date, the research of the nonreciprocal transmission mechanism of some THz wave and device just has preliminary progress.Fan etc. propose the Terahertz photon crystal tunable circulator [Opt.Commun.2012 based on ferrite gyromagnetic material, 285:3763-3769.], although the isolation of this circulator is up to 65dB, such devices needs (to be greater than 7T, 1 tesla=10 in very large external magnetic field
4gauss) under work, and frequency of operation is low, narrow bandwidth.Hu etc. propose use semiconductor and revolve the one-way transmission that electric material formation metal-insulator semiconductor (MIS) structure realizes THz wave, the magnetic field needed for semiconductor material that this device uses is about 1T [Opt.Lett.2012,37,1895-1897].But the one-way transmission ability of magnetic surface plasmon modes produced due to its induction of MIS structure is very weak, make the transmission transmitance of such device lower than 60% and isolation lower than 30dB.Shalaby etc. utilize SrFe
12o
19permanent magnetic material demonstrates the one-way transmission function of Terahertz faraday isolator first experimentally, and its shortcoming is that this magneto-optic memory technique is comparatively strong to the absorption of THz wave, causes device insertion loss to be greater than 5dB [NatureCommun., 2013,4:1558].Therefore, it is large to there is externally-applied magnetic field in existing Terahertz magneto optic isolator, and device magnetic hysteresis loss and insertion loss greatly, are difficult to the shortcomings such as processing, make the development of Terahertz isolator run into very large bottleneck.
Also there is the report not utilizing magneto-optic effect optoisolator in recent years, there is very tempting prospect.2012, Fan etc. put forward a kind of optical diode [Science based on nonlinear effect, 2012,335 (6067): 447-450], it has one-way conduction function as electronic diode, can reach 28dB at communication band isolation, but be limited to the intensity of Terahertz nonlinear material and THz source, terahertz wave band does not also have the report of such device.Utilize asymmetric photonic crystal [ScientificReports, 2012,2], double-deck unsymmetrical metal grating [OptLett, 2013,38 (6): 839-841] and chirality Meta Materials [Phys.Rev.A, 2013, the asymmetric artificial electromagnetic microstructure such as 88 (2): 023823], the asymmetric transmission of THz wave can be realized, namely the THz wave of same polarization state is different along forward and reverse its transmitance of incident device, these devices do not comprise magneto-optic effect or nonlinear effect, but have certain one-way transmission function.Wherein their mechanism of first two device is scattering or the angle of diffraction difference of front reverse transfers, and cause the one-way transmission of certain orientation incident light, these two kinds of devices not yet appear in the newspapers at terahertz wave band; And chirality Meta Materials oneself be in the news at terahertz wave band, it has a very large shortcoming to be that the polarization state of its emergent light usually can turn over 90 ° compared with incident light as isolator, and this does not wish to run in numerous applications.
In sum, the development of development to high-performance Terahertz isolator of Terahertz application system has urgent demand on the one hand, the domestic and international research to Terahertz isolator is but also in the starting stage on the other hand, the Terahertz isolator of current report also cannot meet the actual demand of application system in isolation, insertion loss, bandwidth of operation etc., is badly in need of the Terahertz isolator of development without the need to the high-isolation of externally-applied magnetic field, normal temperature work, low-loss, easily processing.
Summary of the invention
The object of the present invention is to provide a kind of double-deck asymmetric Subwavelength Dielectric Gratings Terahertz isolator, the key technical problems such as in solution background technology, the magnetic field of Terahertz isolator is large, low-temperature working, isolation are low, loss is large, making is difficult.
Technical scheme of the present invention is: the structure adopting double-deck asymmetric Subwavelength Dielectric Gratings, two-layer before and after utilizing have zero level guided mode resonance effects different in the sub-wave length grating of different structure and first-order diffraction effect, the light path that the THz ripple forward of this grating of normal incidence and reverse transfer are experienced is asymmetric, this asymmetric Subwavelength Dielectric Gratings incident can be through along front for the THz wave of certain frequency range, and can not be through along reverse side, realize the insulator functionality of one-way transmission.
Double-deck asymmetric Subwavelength Dielectric Gratings Terahertz isolator comprises: the Subwavelength Dielectric Gratings that two pieces of grating constants are all different with line width, be designated as sub-wave length grating 1 and sub-wave length grating 2, the all complete High Resistivity Si being greater than 10K Ω cm by resistivity is formed, 500 μm of thick High Resistivity Si wafers are by mask plate photoetching and plasma etch process etching depth the groove of 120 μm, form the high relief type optical grating construction of periodically wire ridge and groove composition, wherein the screen periods of sub-wave length grating 1 is 400 μm, ridge is wide 180 μm, the screen periods of sub-wave length grating 2 is 440 μm, ridge is wide 220 μm, two grating silicon substrates are thick is 380 μm.Encapsulate with the embossment groove face head to head close alignment bonding of UV resin glue by sub-wave length grating 1 and sub-wave length grating 2, form one piece of asymmetric Subwavelength Dielectric Gratings of bilayer.Grating 2 basal surface is designated as the front of unsymmetrical grating, grating 1 basal surface is designated as reverse side.Size of devices is 1.5mm × 1.5mm × 0.5mm.
The method of work of double-deck asymmetric Subwavelength Dielectric Gratings Terahertz isolator is: device is put into Terahertz light path, because device is passive passive device, without the need to applying any extra electricity, magnetic or light as driven by energy, to environment temperature and humidity etc. also without particular/special requirement, under normal temperature, get final product work.The incident angle of device to incident light has stronger dependence, needs the working method adopting normal incidence grating planar, front transmission THz wave, and the not saturating THz wave of reverse side; The frequency range of one-way transmission must operate in the Free Spectral Range of sub-wave length grating 1 and grating 20 grade and 1 order diffraction; When incident light polarization direction is along when being parallel to grating line direction (TE polarized wave), center operating frequency is 0.5,1.15 and 1.55THz, when incident light polarization direction is along during perpendicular to grating line direction (TM polarized wave), center operating frequency is 0.5,0.8 and 1.45THz.
Beneficial effect of the present invention and advantage are:
1. adopt double-deck Subwavelength Dielectric Gratings structure, utilize zero level guided mode resonance effects different in the sub-wave length grating that two-layer grating constant and live width are slightly different and first-order diffraction effect, realize the asymmetric unidirectional isolation transmission of device.The method adopting all dielectric material to form unsymmetrical grating still belongs to the first time both at home and abroad, double-deck unsymmetrical metal grating of comparing to over must could obtain asymmetric transmission and compare more than first-order diffraction, the outgoing beam quality of this device is greatly improved, and maximum isolation degree is close to 20dB.
2. adopt all dielectric material to form one-way transmission device, compared to magneto optic isolator, without the need to adding magneto-optic memory technique, without the need to using externally-applied magnetic field, particular/special requirement be there is no to device operating temperature and environment, substantially increasing the practicality of device;
3. adopt High Resistivity Si to be made into Subwavelength Dielectric Gratings as dielectric material, compared with metal grating, reduce spillage of material and the insertion loss of device, this isolator forward loss is less than 5dB;
4. adopt High Resistivity Si as element manufacturing material, lower cost for material; Adopt semiconductor lithography and plasma etch process processing grating device, manufacture craft is simple, robustness good; Utilize ultraviolet glue to be encapsulated two pieces of different dielectric gratings dexterously, be easy to make, protect again grating relief face not to be damaged simultaneously, improve device serviceable life and stability.
Accompanying drawing explanation
Fig. 1 (a) is double-deck asymmetric Subwavelength Dielectric Gratings Terahertz isolator top view;
Fig. 1 (b) is double-deck asymmetric Subwavelength Dielectric Gratings Terahertz isolator three-dimensional structure schematic diagram;
Fig. 2 (a) is the microphotograph of sub-wave length grating 1;
Fig. 2 (b) is the microphotograph of sub-wave length grating 2;
Fig. 3 (a) is the transmission spectral line under TE polarized wave and TM polarized wave of sub-wave length grating 1;
Fig. 3 (b) is the transmission spectral line under TE polarized wave and TM polarized wave of sub-wave length grating 2;
Fig. 4 (a) is that the TE polarized wave of forward and oppositely incidence is to the transmission spectral line of this isolator;
Fig. 4 (b) is that the TM polarized wave of forward and oppositely incidence is to the transmission spectral line of this isolator;
Fig. 5 is that TE polarized wave and TM polarized wave are to the isolation spectral line of this isolator;
Fig. 6 is the distribution map of the electric field of this isolator forward and backpropagation during the incidence of TM polarized wave under 1.45THz frequency;
In figure: sub-wave length grating 1, sub-wave length grating 2, forward entrance THz wave 3, oppositely enter THz wave 4.
Embodiment
Principle of work of the present invention and method are by example explanation below:
The structure of device as shown in Figure 1, the Subwavelength Dielectric Gratings that two pieces of grating constants are all different with line width, be designated as sub-wave length grating 1 and sub-wave length grating 2, the all complete High Resistivity Si being greater than 10K Ω .cm by resistivity is formed, 500 μm of thick High Resistivity Si wafers are by mask plate photoetching and plasma etch process etching depth the groove of 120 μm, form the high relief type optical grating construction of periodically wire ridge and groove composition.As shown in Figure 2, the screen periods of sub-wave length grating 1 is 400 μm, and ridge is wide 180 μm, and the screen periods of sub-wave length grating 2 is 440 μm, and ridge is wide 220 μm, and two grating silicon substrates are thick is 380 μm.Encapsulate with the embossment groove face head to head close alignment bonding of UV resin glue by sub-wave length grating 1 and sub-wave length grating 2, form one piece of asymmetric Subwavelength Dielectric Gratings of bilayer.Grating 2 basal surface is designated as the front of unsymmetrical grating, grating 1 basal surface is designated as reverse side.Size of devices is 15mm × 15mm × 0.5mm.
The basic functional principle of this device is as follows: the structure adopting double-deck asymmetric Subwavelength Dielectric Gratings, two-layer before and after utilizing have zero level guided mode resonance effects different in the sub-wave length grating of different structure and first-order diffraction effect, the light path that the THz ripple forward of this grating of normal incidence and reverse transfer are experienced is asymmetric, realizes the insulator functionality of one-way transmission.As shown in Figure 3, the guided mode resonance frequency of sub-wave length grating 1 and intensity are all slightly different from sub-wave length grating 2, the resonance of TE ripple all occurs near 0.55 and 1.15THz, the resonance of TM ripple all occurs near 0.7 and 1.2THz, the resonance frequency of sub-wave length grating 2 moves slightly to low frequency than sub-wave length grating 1, and resonant intensity reduces.From grating equation,
d(sini+sinθ)＝mλm＝0，±1，±2...
Wherein d is grating constant, and two gratings are respectively d
1=400 μm, d
2=440 μm, i is incident angle, and during normal incidence, i=0, θ are angle of diffraction, and λ is lambda1-wavelength, and m is the order of diffraction time, and get λ=200 μm, the first-order diffraction angle of two gratings is respectively θ
1=30 °, θ
2=27 °.The first-order diffraction angle of sub-wave length grating 1 is greater than sub-wave length grating 2.After the grating face of the two fits together and forms the new asymmetric Subwavelength Dielectric Gratings of bilayer, when the incident device of forward light, because light is first by sub-wave length grating 2, its guided mode resonance is more weak, grating constant is large, the little sub-wave length grating 1 later in first-order diffraction angle, thus can not excite mode-interference effect significantly between two-layer grating, intensity in transmission near resonance frequency is not subject to grating and significantly modulates, can through grating.As shown in Figure 4, and when the incident device of backlight, because light is first by sub-wave length grating 1, its guided mode resonance is stronger, the large sub-wave length grating 2 later in first-order diffraction angle, thus excite mode-interference effect significantly between two-layer grating layer, is in the state of coherence stack for the phase place of two grating modes of resonance TE ripple, cause resonant intensity to superpose enhancing further, resonant bandwidth is widened; The state of coherent subtraction is in for the phase place of two grating modes of resonance TM ripple, former resonance frequency place is caused to occur the effect that the transmitance of an arrowband strengthens, namely induce transparent effect, and new transmission peaks frequency (as 0.67THz in Fig. 4 b) both sides produce two new strong resonance paddy (as 0.5THz and 0.8THz in Fig. 4 b).As can be seen from Figure 5, no matter be TE or TM polarization, the coherence stack of mode of resonance or coherent subtraction when no matter being reverse transfer, all result in the forward and reverse asymmetry transmission of this grating device, achieve the function of unidirectional isolation transmission.
The method of work of this device is: device is put into Terahertz light path, because device is passive passive device, without the need to applying any extra electricity, magnetic or light as driven by energy, to environment temperature and humidity etc. also without particular/special requirement, gets final product work under normal temperature.Because the incident angle of device to incident light has stronger dependence, need the working method adopting normal incidence grating planar, front transmission THz wave, and the not saturating THz wave of reverse side; The frequency range of one-way transmission must operate in the Free Spectral Range of sub-wave length grating 1 and grating 20 grade and 1 order diffraction; As shown in Figure 5, when TE polarized wave, center operating frequency is 0.5,1.15 and 1.55THz, and when TM polarized wave, center operating frequency is 0.5,0.8 and 1.45THz.
Different zero level guided mode resonance effects and first-order diffraction effect in the sub-wave length grating that the two-layer grating constant of this devices use is slightly different with live width, achieve asymmetric unidirectional isolation transmission.As shown in Figure 5, this device maximum isolation degree is close to 20dB, and forward loss is less than 5dB.Fig. 6 show this isolator TM polarized wave under 1.45THz frequency incident time forward and the distribution map of the electric field of backpropagation, demonstrate its forward intuitively through THz wave, oppositely forbid THz wave through.
The method adopting all dielectric material to form unsymmetrical grating still belongs to the first time both at home and abroad, and double-deck unsymmetrical metal grating of comparing to over must could obtain asymmetric transmission and compare more than first-order diffraction, and the outgoing beam quality of this device is greatly improved.Adopt all dielectric material to form one-way transmission device, compared to magneto optic isolator, without the need to adding magneto-optic memory technique, without the need to using externally-applied magnetic field, particular/special requirement be there is no to device operating temperature and environment, substantially increasing the practicality of device; Adopt High Resistivity Si to be made into Subwavelength Dielectric Gratings as dielectric material, compared with metal grating, reduce spillage of material and the insertion loss of device.Element manufacturing lower cost for material, manufacture craft is simple, robustness good, utilizes ultraviolet glue to be encapsulated two pieces of different dielectric gratings dexterously, is easy to make, and protects again grating relief face not to be damaged simultaneously, improves device serviceable life and stability.Device breadth can flexible design, both can be integrated in small-sized Terahertz solid electronic device and system, the large format device that can be designed to again the above size of millimeter is placed in the systems such as free space THz wave spectrum, imaging, communication and radar and uses, and has wide range of applications.
Claims (6)
1. a bilayer asymmetric Subwavelength Dielectric Gratings Terahertz isolator, it is characterized in that comprising two pieces of grating constants Subwavelength Dielectric Gratings all different with line width, be designated as sub-wave length grating 1 and sub-wave length grating 2, and two blocks of gratings are pressed the close alignment bonding each other of grating line face, be combined as one block of grating.
2. bilayer according to claim 1 asymmetric Subwavelength Dielectric Gratings Terahertz isolator, it is characterized in that sub-wave length grating 1 and all complete High Resistivity Si being greater than 10K Ω cm by resistivity of sub-wave length grating 2 are formed, 500 μm of thick High Resistivity Si wafers are by mask plate photoetching and plasma etch process etching depth the groove of 120 μm, form the high relief type optical grating construction of periodically wire ridge and groove composition, wherein the screen periods of sub-wave length grating 1 is 400 μm, ridge is wide 180 μm, the screen periods of sub-wave length grating 2 is 440 μm, ridge is wide 220 μm, two grating silicon substrates are thick is 380 μm.
3. bilayer according to claim 1 asymmetric Subwavelength Dielectric Gratings Terahertz isolator, it is characterized in that encapsulating with the embossment groove face head to head close alignment bonding of UV resin glue by sub-wave length grating 1 and sub-wave length grating 2, form one piece of asymmetric Subwavelength Dielectric Gratings, grating 2 basal surface is designated as the front of unsymmetrical grating, grating 1 basal surface is designated as reverse side, the basic function of this device is that this asymmetric Subwavelength Dielectric Gratings incident can be through along front for the THz wave of certain frequency range, and can not be through along reverse side, realize the insulator functionality of one-way transmission.
4. bilayer according to claim 1 asymmetric Subwavelength Dielectric Gratings Terahertz isolator, it is characterized in that this device is sub-wave length grating, the frequency range realizing one-way transmission must operate in the Free Spectral Range of grating 1 and grating 20 grade and 1 order diffraction, i.e. 0.2THz to 1.6THz frequency range.
5. bilayer according to claim 1 asymmetric Subwavelength Dielectric Gratings Terahertz isolator, it is characterized in that device has very strong polarization dependence, when incident light polarization direction is along when being parallel to grating line direction (TE polarized wave), frequency of operation is 0.5,1.15 and 1.55THz, when incident light polarization direction is along during perpendicular to grating line direction (TM polarized wave), frequency of operation is 0.5,0.8 and 1.45THz.
6. bilayer according to claim 1 asymmetric Subwavelength Dielectric Gratings Terahertz isolator, it is characterized in that the incident angle of this device to incident light has stronger dependence, when this grating uses as isolator, adopt the working method of normal incidence grating planar.
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| CN106840386A (en) * | 2017-01-05 | 2017-06-13 | 北京环境特性研究所 | Double-deck photonic crystal 0.325THz quality factor resonators |
| CN107765450A (en) * | 2017-10-17 | 2018-03-06 | 北京邮电大学 | Broadband Terahertz line polarization wave asymmetric transmission device based on Meta Materials |
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| CN110058431A (en) * | 2019-04-24 | 2019-07-26 | 南开大学 | The super surface magneto-optic Ke Er polarization converter of Terahertz |
| CN110515254A (en) * | 2019-09-02 | 2019-11-29 | 南开大学 | A kind of nonreciprocal magneto-optic terahertz wave beam scanner |
| CN113031139A (en) * | 2019-12-25 | 2021-06-25 | 南开大学 | Transmission type large-angle deflection double-layer uniform grating for 3D printing |
| CN113031139B (en) * | 2019-12-25 | 2022-07-05 | 南开大学 | Transmission type large-angle deflection double-layer uniform grating for 3D printing |
| CN112904550A (en) * | 2021-01-29 | 2021-06-04 | 华中科技大学 | Terahertz wave amplitude modulator based on multilayer silicon-based grating and preparation method |
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| CN117405604B (en) * | 2023-10-30 | 2024-03-29 | 河北工程大学 | Graphene biosensor based on double-layer sub-wavelength grating |
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