CN105040096A - Novel spiral GaN monocrystal nanowire and preparation method thereof - Google Patents
Novel spiral GaN monocrystal nanowire and preparation method thereof Download PDFInfo
- Publication number
- CN105040096A CN105040096A CN201510353880.5A CN201510353880A CN105040096A CN 105040096 A CN105040096 A CN 105040096A CN 201510353880 A CN201510353880 A CN 201510353880A CN 105040096 A CN105040096 A CN 105040096A
- Authority
- CN
- China
- Prior art keywords
- gan
- preparation
- monocrystal nanowire
- spiral
- novel spiral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002070 nanowire Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 12
- 239000013049 sediment Substances 0.000 claims abstract description 8
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract 3
- 230000008569 process Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 238000004320 controlled atmosphere Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 16
- 239000002086 nanomaterial Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910015221 MoCl5 Inorganic materials 0.000 abstract 2
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 abstract 2
- 238000005303 weighing Methods 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 11
- 229910006295 Si—Mo Inorganic materials 0.000 description 4
- 230000005291 magnetic effect Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 1
- -1 InP compound Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- BGOFCVIGEYGEOF-UJPOAAIJSA-N helicin Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=CC=C1C=O BGOFCVIGEYGEOF-UJPOAAIJSA-N 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 208000011580 syndromic disease Diseases 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910021381 transition metal chloride Inorganic materials 0.000 description 1
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a novel spiral GaN monocrystal nanowire and a preparation method thereof, and belongs to the technical field of semiconductor nanomaterial production. According to the preparation method, a chemical vapor deposition method is adopted to prepare the spiral GaN nanowire, and the preparation method comprises the following steps: weighing a proper amount of Ga, and putting the Ga in a ceramic boat; putting the ceramic boat in the middle of a horizontal tube furnace; weighing a proper amount of MoCl5, and putting the MoCl5 in the ceramic boat; putting the ceramic boat in the upstream position 20-30 cm away from a middle temperature zone; at the same time, putting a gilded Si substrate in the position 20-25 cm away from the middle temperature zone; sealing the horizontal tube furnace; starting a vacuum system; when the vacuum degree in the furnace reaches 1*10<-3> Pa, introducing Ar gas; heating and keeping the temperature; adjusting the Ar gas flow rate to 10 sccm, and turning on an ammonia airflow valve for introducing ammonia gas at the same time; after reacting for 1-2 h, stopping ammonia gas introduction, and cooling to room temperature; finally, collecting a layer of sediment on the Si substrate, namely, the spiral GaN monocrystal nanowire. The preparation method is easy to implement, simple in technology and relatively low in cost.
Description
Technical field
The present invention relates to nano material and preparation method thereof, be specifically related to a kind of Novel spiral GaN monocrystal nanowire and preparation method thereof, relate to the preparation research of semiconductor material, belong to semiconductor nano material production technical field.
Background technology
GaN is a kind of semi-conductor with larger energy gap, belongs to the row of so-called wide bandgap semiconductor, and it is the excellent material of microwave power transistor, is also a kind of semi-conductor with significant application value in blue light luminescent device.GaN is the compound of stabilizer pole, and be again hard materials with high melting point, fusing point is about 1700 DEG C; GaN has high degree of ionization, is the highest in III-V compounds of group; At atmosheric pressure, GaN crystal is generally hexagonal wurtzite structure; It has 4 atoms in a cellular, and atomic volume is approximately the half of GaAs; Again because its hardness is high, it is a kind of good coating protection material.The research and apply of GaN material is forward position and the focus of the research of current global semiconductor, it is the novel semiconductor material of development microelectronic device, opto-electronic device, and together with the semiconductor material such as SIC, diamond, being described as is third generation semiconductor material after first-generation Ge, Si semiconductor material, s-generation GaAs, InP compound semiconductor materials.It has character and the strong Radiation hardness such as wide direct band gap, strong atomic bond, high thermal conductivity, chemical stability good (hardly by any acid corrosion), has wide prospect in photoelectron, high temperature high power device and high frequency microwave device application aspect.
GaN base dilute magnetic semiconductor has premium properties in optics, electricity, magnetics etc., and be with a wide range of applications based on the optics of GaN base dilute magnetic semiconductor material exploitation, electricity, magnetic component, its portioned product occupies a tiny space in the market.In recent years, about the various patterns of GaN nanostructure have had a large amount of report, as GaN nano-powder, nano wire, nanotube, nano belt, nanometer sheet, nano thin-film, triangular prism; Low dimensional structures GaN material can effectively reduce taking up room of device, and one-dimensional nano line can play a significant role in assemble nanometer device.The present invention mainly uses the MoCl of different concns at reaction source
5achieve the preparation of spirrillum GaN monocrystal nanowire.
Investigator is had to utilize chemical Vapor deposition process to have studied MnCl
2, CoCl
2and CrCl
3impact when growing GaN nano wire, and done the research of related mechanism aspect, insert the difference of the transition metal chloride substance withdrawl syndrome in tube furnace before the reaction, also respective change can be there is in the microscopic appearance of the GaN nanostructure grown, as there is hexagon, trilateral and square cross section, but do not relate to Z-shaped nano wire in this change, helicoidal structure occurs, consult NanoLetters, the 8th volume (the 9th phase) the 2674 to 2681 page.
From literature survey and related data, not yet report utilizes chemical Vapor deposition process to prepare a large amount of spirrillum GaN nano wire at present, utilize this legal system for spirrillum GaN nano wire, the sample purity obtained is higher, under x-ray diffractometer limit of detection condition, does not find second-phase, and method is simple, sample obtains and is easy to repetition, little to environmental hazard, be easy to the advantages such as popularization, therefore can be widely used in the preparation of III-V race's semi-conductor.
Summary of the invention
The object of this invention is to provide a kind of Novel spiral GaN monocrystal nanowire and preparation method thereof, there is spiral helicine GaN nano wire method, to fill up spirrillum GaN nano wire microscopic appearance technological gap by chemical Vapor deposition process preparation; The present invention adopts metal Ga and NH
3gas respectively as Ga source and N source, MoCl
5powder as Mo source, with obtain controllable growth spirrillum GaN nano wire; Present method is simple, cost is low, and all raw materials are all very common, can realize suitability for industrialized production.
For achieving the above object, the technical solution used in the present invention is as follows:
A preparation method for Novel spiral GaN monocrystal nanowire, comprises the steps:
(1) taking metal Ga is contained in ceramic boat, and be placed on the middle part of horizontal pipe furnace, Mo/Ga=0.15 ~ 0.20 takes MoCl in molar ratio
5powder is contained in ceramic boat, is placed in the upstream position apart from center warm area 20 ~ 30cm, simultaneously at the Si substrate placing gold-plated process apart from 20 ~ 25cm position, warm area downstream, center, and sealed horizontal tube furnace;
(2) vacuum system is started, vacuum tightness to 1 × 10 in stove
-3during Pa, pass into Ar gas, Ar entraining air stream speed is 10 ~ 80sccm, is heated to 940 ~ 1050 DEG C, is incubated 0.5 ~ 2 hour, turns on ammonia draught damper simultaneously and pass into NH with 15 ~ 100sccm flow velocity
3gas, after 1 ~ 2h is carried out in reaction, disconnect ammonia and be cooled to room temperature, finally collect a surface sediments on a si substrate, be spirrillum GaN monocrystal nanowire, the GaN nano wire prepared presents spiral shape, and is single crystal structure.
The invention has the beneficial effects as follows: direct employing chemical Vapor deposition process of the present invention prepares spirrillum GaN nano wire, and still belong to the first time report, adds the variation of GaN nano wire microscopic appearance, for preparation GaN photoelectric device adds selectable range; The method preparation technology is simple, cost is low, be easy to control; Experimental product purity compared with high, good uniformity, controllability is good, environmental pollution is little, be easy to promote, thus there is important researching value and wide application prospect, the preparation of III-V race's semi-conductor can be widely used in.
figure of description
The SEM figure of Fig. 1 spirrillum GaN nano wire;
The single spirrillum GaN nano wire SEM of Fig. 2 schemes;
The TEM figure of Fig. 3 sample;
The TEM figure of Fig. 4 sample;
The HRTEM figure of Fig. 5 sample;
The SAED figure of Fig. 6 sample;
The XRD figure of Fig. 7 sample.
Embodiment
Be described in further details the present invention below by example, these examples are only used for the present invention is described, do not limit the scope of the invention.
Embodiment 1
A preparation method for Novel spiral GaN nano wire, is realized by following technique: utilize chemical Vapor deposition process to prepare Novel spiral GaN nano wire, adopts metal Ga and NH
3gas respectively as Ga source and N source, MoCl
5powder is as Mo source, and take appropriate metal Ga and be contained in ceramic boat, be placed on the middle part of horizontal pipe furnace, Mo/Ga=0.16 takes appropriate MoCl in molar ratio
5be contained in ceramic boat, be placed in the upstream position apart from center warm area 20 ~ 30cm, simultaneously at the Si substrate placing gold-plated process apart from warm area 20 ~ 25cm position, center, sealed horizontal tube furnace; Start vacuum system, vacuum tightness to 1 × 10 in stove
-3during Pa; Pass into Ar gas, when being heated to 970 degrees Celsius, by Ar controlled atmosphere to 10sccm, turn on ammonia draught damper to pass into 30sccm flow velocity simultaneously, after 1h is carried out in reaction, disconnect ammonia and be cooled to room temperature, finally collect a surface sediments on a si substrate, be spirrillum GaN monocrystal nanowire.
The volution GaN nano wire of gained, at the growth tail end of straight nano wire, all growth has spirrillum GaN nano wire, and its radial dimension is about about 70nm, the surperficial phase relative smooth of nano wire, as shown in Figure 1, Figure 2, Figure 3 and Figure 4; Sample has obvious lattice fringe, and obvious diffraction spot, as shown in Figure 5 and Figure 6, shows that sample is single crystal structure; The XRD diffract spectral line of sample shows that it is wurtzite GaN structure (ICDD-PDFNo.50-0792), as Fig. 7.
As can be seen from above example, the spirrillum GaN nano wire adopting chemical Vapor deposition process to prepare has room-temperature ferromagnetic, the feature that its product uniformity is good, controllability is good, technique is simple, cost is low, thus has important researching value and wide application prospect.
Embodiment 2
Preparation spirrillum GaN nano wire, the horizontal pipe furnace that system for use in carrying is heated by Si-Mo rod, air-channel system and vacuum system form, and utilize chemical Vapor deposition process to prepare novel GaN spirrillum nano wire, adopt metal Ga and NH
3gas respectively as Ga source and N source, MoCl
5powder is as Mo source;
(1) taking metal Ga is contained in ceramic boat, and be placed on the middle part of horizontal pipe furnace, Mo/Ga=0.15 takes MoCl in molar ratio
5powder is contained in ceramic boat, is placed in the upstream position apart from center warm area 20 ~ 30cm, simultaneously at the Si substrate placing gold-plated process apart from 20 ~ 25cm position, warm area downstream, center, and sealed horizontal tube furnace;
(2) vacuum system is started, vacuum tightness to 1 × 10 in stove
-3during Pa, pass into Ar gas, Ar entraining air stream speed is 10sccm, is heated to 940 DEG C, is incubated 2 hours, turns on ammonia draught damper simultaneously and pass into NH with 15sccm flow velocity
3gas, after 2h is carried out in reaction, disconnect ammonia and be cooled to room temperature, finally collect a surface sediments on a si substrate, be spirrillum GaN monocrystal nanowire, the GaN nano wire prepared presents spiral shape, and is single crystal structure.
Embodiment 3
Preparation spirrillum GaN nano wire, the horizontal pipe furnace that system for use in carrying is heated by Si-Mo rod, air-channel system and vacuum system form, and utilize chemical Vapor deposition process to prepare novel GaN spirrillum nano wire, adopt metal Ga and NH
3gas respectively as Ga source and N source, MoCl
5powder is as Mo source;
(1) taking metal Ga is contained in ceramic boat, and be placed on the middle part of horizontal pipe furnace, Mo/Ga=0.20 takes MoCl in molar ratio
5powder is contained in ceramic boat, is placed in the upstream position apart from center warm area 20 ~ 30cm, simultaneously at the Si substrate placing gold-plated process apart from 20 ~ 25cm position, warm area downstream, center, and sealed horizontal tube furnace;
(2) vacuum system is started, vacuum tightness to 1 × 10 in stove
-3during Pa, pass into Ar gas, Ar entraining air stream speed is 80sccm, is heated to 1050 DEG C, is incubated 0.5 hour, turns on ammonia draught damper simultaneously and pass into NH with 100sccm flow velocity
3gas, after 1h is carried out in reaction, disconnect ammonia and be cooled to room temperature, finally collect a surface sediments on a si substrate, be spirrillum GaN monocrystal nanowire, the GaN nano wire prepared presents spiral shape, and is single crystal structure.
Embodiment 4
Preparation spirrillum GaN nano wire, the horizontal pipe furnace that system for use in carrying is heated by Si-Mo rod, air-channel system and vacuum system form, and utilize chemical Vapor deposition process to prepare novel GaN spirrillum nano wire, adopt metal Ga and NH
3gas respectively as Ga source and N source, MoCl
5powder is as Mo source;
(1) taking metal Ga is contained in ceramic boat, and be placed on the middle part of horizontal pipe furnace, Mo/Ga=0.18 takes MoCl in molar ratio
5powder is contained in ceramic boat, is placed in the upstream position apart from center warm area 20 ~ 30cm, simultaneously at the Si substrate placing gold-plated process apart from 20 ~ 25cm position, warm area downstream, center, and sealed horizontal tube furnace;
(2) start vacuum system, in stove, vacuum tightness is down to 1 × 10
-3during Pa, pass into Ar gas, Ar entraining air stream speed is 40sccm, is heated to 1000 DEG C, is incubated 1 hour, turns on ammonia draught damper simultaneously and pass into NH with 60sccm flow velocity
3gas, after 1.5h is carried out in reaction, disconnect ammonia and be cooled to room temperature, finally collect a surface sediments on a si substrate, be spirrillum GaN monocrystal nanowire, the GaN nano wire prepared presents spiral shape, and is single crystal structure.
Embodiment 5
Preparation spirrillum GaN nano wire, the horizontal pipe furnace that system for use in carrying is heated by Si-Mo rod, air-channel system and vacuum system form, and utilize chemical Vapor deposition process to prepare novel GaN spirrillum nano wire, adopt metal Ga and NH
3gas respectively as Ga source and N source, MoCl
5powder is as Mo source;
(1) taking metal Ga is contained in ceramic boat, and be placed on the middle part of horizontal pipe furnace, Mo/Ga=0.19 takes MoCl in molar ratio
5powder is contained in ceramic boat, is placed in the upstream position apart from center warm area 20 ~ 30cm, simultaneously at the Si substrate placing gold-plated process apart from 20 ~ 25cm position, warm area downstream, center, and sealed horizontal tube furnace;
(2) start vacuum system, in stove, vacuum tightness is down to 1 × 10
-3during Pa, pass into Ar gas, Ar entraining air stream speed is 60sccm, is heated to 1020 DEG C, is incubated 1.5 hours, turns on ammonia draught damper simultaneously and pass into NH with 80sccm flow velocity
3gas, after 1h is carried out in reaction, disconnect ammonia and be cooled to room temperature, finally collect a surface sediments on a si substrate, be spirrillum GaN monocrystal nanowire, the GaN nano wire prepared presents spiral shape, and is single crystal structure.
Claims (5)
1. a preparation method for Novel spiral GaN monocrystal nanowire, is characterized in that: utilize chemical Vapor deposition process to prepare Novel spiral GaN nano wire; Adopt metal Ga and NH
3gas respectively as Ga source and N source, MoCl
5as Mo source, concrete grammar comprises the steps:
(1) taking metal Ga is contained in ceramic boat, and be placed on the middle part of horizontal pipe furnace, Mo/Ga=0.15 ~ 0.20 takes MoCl in molar ratio
5be contained in ceramic boat, be placed in the upstream position apart from center warm area 20 ~ 30cm, simultaneously at the Si substrate placing gold-plated process apart from 20 ~ 25cm position, warm area downstream, center, sealed horizontal tube furnace;
(2) vacuum system is started, vacuum tightness to 1 × 10 in stove
-3during Pa, pass into Ar gas, heating and thermal insulation, by Ar controlled atmosphere to 10sccm, turn on ammonia draught damper simultaneously and pass into NH
3gas, after 1 ~ 2h is carried out in reaction, disconnects ammonia and is cooled to room temperature, finally collecting a surface sediments on a si substrate, be spirrillum GaN monocrystal nanowire.
2. the preparation method of a kind of Novel spiral GaN monocrystal nanowire according to claim 1, is characterized in that: the temperature of step (2) described heating is 940 ~ 1050 DEG C, is incubated 0.5 ~ 2 hour.
3. the preparation method of a kind of Novel spiral GaN monocrystal nanowire according to claim 1, is characterized in that: the airflow rate of the described Ar gas of step (2) is 10 ~ 80sccm, NH
3entraining air stream speed is 15 ~ 100sccm.
4. a Novel spiral GaN monocrystal nanowire, is characterized in that: utilize method described in claim 1 ~ 3 any one to prepare.
5. a kind of Novel spiral GaN monocrystal nanowire according to claim 4, is characterized in that: Novel spiral GaN monocrystal nanowire presents spiral shape, and is single crystal structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510353880.5A CN105040096B (en) | 2015-06-25 | 2015-06-25 | A kind of helical form GaN single crystal nano wire and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510353880.5A CN105040096B (en) | 2015-06-25 | 2015-06-25 | A kind of helical form GaN single crystal nano wire and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105040096A true CN105040096A (en) | 2015-11-11 |
CN105040096B CN105040096B (en) | 2018-02-02 |
Family
ID=54447059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510353880.5A Expired - Fee Related CN105040096B (en) | 2015-06-25 | 2015-06-25 | A kind of helical form GaN single crystal nano wire and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105040096B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107699863A (en) * | 2017-09-19 | 2018-02-16 | 北京工业大学 | A kind of method that MPCVD prepares GaN nano wire |
CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090098714A1 (en) * | 2007-10-15 | 2009-04-16 | National Chiao Tung University | Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate |
JP2010006670A (en) * | 2008-06-30 | 2010-01-14 | National Univ Corp Shizuoka Univ | Nanowire structure and method for producing the same |
US20130186326A1 (en) * | 2009-11-23 | 2013-07-25 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | GaN Whiskers and Methods of Growing Them from Solution |
CN103531447A (en) * | 2012-07-06 | 2014-01-22 | 中国科学院金属研究所 | Method for reducing defect density of gallium nitride nanowire array crystal |
CN103641081A (en) * | 2013-11-22 | 2014-03-19 | 西安理工大学 | Method for preparing bamboo shoot shaped GaN nano wire |
CN103774230A (en) * | 2014-01-25 | 2014-05-07 | 北京工业大学 | Method for preparing gallium nitride nano wire by non-ammoniation |
CN104313548A (en) * | 2014-10-08 | 2015-01-28 | 上海理工大学 | Preparation method of gallium nitride nanowires |
-
2015
- 2015-06-25 CN CN201510353880.5A patent/CN105040096B/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090098714A1 (en) * | 2007-10-15 | 2009-04-16 | National Chiao Tung University | Method for forming III-nitrides semiconductor epilayer on the semiconductor substrate |
JP2010006670A (en) * | 2008-06-30 | 2010-01-14 | National Univ Corp Shizuoka Univ | Nanowire structure and method for producing the same |
US20130186326A1 (en) * | 2009-11-23 | 2013-07-25 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | GaN Whiskers and Methods of Growing Them from Solution |
CN103531447A (en) * | 2012-07-06 | 2014-01-22 | 中国科学院金属研究所 | Method for reducing defect density of gallium nitride nanowire array crystal |
CN103641081A (en) * | 2013-11-22 | 2014-03-19 | 西安理工大学 | Method for preparing bamboo shoot shaped GaN nano wire |
CN103774230A (en) * | 2014-01-25 | 2014-05-07 | 北京工业大学 | Method for preparing gallium nitride nano wire by non-ammoniation |
CN104313548A (en) * | 2014-10-08 | 2015-01-28 | 上海理工大学 | Preparation method of gallium nitride nanowires |
Non-Patent Citations (2)
Title |
---|
K.P.BEH ET AL.: ""One-step growth of curled GaN nanowires using chemical vapor deposition method"", 《VACUUM》 * |
T.Y.KIM ET AL.: "Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor", 《JOURNAL OF CRYSTAL GROWTH》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107699863A (en) * | 2017-09-19 | 2018-02-16 | 北京工业大学 | A kind of method that MPCVD prepares GaN nano wire |
CN107910243A (en) * | 2017-10-18 | 2018-04-13 | 中国科学院半导体研究所 | The method for preparing GaN nano wire on substrate |
Also Published As
Publication number | Publication date |
---|---|
CN105040096B (en) | 2018-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102358938B (en) | Method for controllably synthesizing single-crystal WO2 and WO3 nanowire arrays with good field emission characteristics in low temperature and large area | |
CN103387213B (en) | A kind of gallium nitride nano-wire and preparation method thereof | |
CN105197983B (en) | Method for preparing Zn-doped p-type beta-Ga2O3 nanowire according to chemical vapor deposition method | |
CN106558475B (en) | Wafer scale single layer molybdenum disulfide film and preparation method thereof | |
Shin et al. | Low temperature and self-catalytic growth of tetragonal SnO nanobranch | |
CN103966662A (en) | Method for positioning transversely-growing zinc oxide nanowires on silicon electrode | |
CN104418380B (en) | A kind of zinc oxide nano-wire array structure and preparation method thereof | |
CN110112060A (en) | A method of III-V race's semiconductor nanowires direction of growth of high-performance is controlled using gas-solid-solid growth pattern | |
CN103160929B (en) | The preparation method of a kind of monocrystal AIN nano cone and nanometer sheet | |
CN105040096A (en) | Novel spiral GaN monocrystal nanowire and preparation method thereof | |
CN105543972B (en) | High-purity high-density MoO2The preparation method of lamellar nanostructured | |
CN101323975B (en) | Preparation of SnO2Method for preparing -ZnO heterogeneous nano branch structure | |
Goh et al. | Synthesis of nickel catalyzed Si/SiC core–shell nanowires by HWCVD | |
Chen et al. | Controlled CVD growth of Cu–Sb alloy nanostructures | |
CN101311365B (en) | Method for preparing room-temperature ferromagnetic Fe doped ZnO nanometer wire | |
CN103498190B (en) | The preparation method of high purity dendrite FeWO4/FeS nanometer nuclear shell nano-structure | |
CN102304699A (en) | Preparation method of Mn-doped AlN diluted magnetic semiconductor nanorod array | |
Cai et al. | A systematic study of chemical vapor deposition growth of InN | |
Schroeder et al. | Morphology alterations during postsynthesis oxidation of Zn nanowires | |
CN102321915A (en) | A kind of preparation method of Mn doped with Al N monocrystal nano rod | |
Yu et al. | Application of in situ chloride-generated route to Ti5Si3 nanowires from and on Si substrate | |
Hu et al. | Synthesis and Photoluminscence Properties of Morphology-and Microstructure-Controlled S-Doped ZnO Nanostructures | |
Dong et al. | Ag nanoparticle-decorated ZnO nanorod arrays: synthesis, growth mechanism, and properties | |
Lu et al. | Modified chemical vapor deposition synthesis of ultralong V2O5 nanobelt and its electronic properties | |
TW200523214A (en) | Production method of zinc oxide nanowires |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180202 |
|
CF01 | Termination of patent right due to non-payment of annual fee |