CN105036520A - Deposition furnace for preparing quartz glass mound - Google Patents
Deposition furnace for preparing quartz glass mound Download PDFInfo
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- CN105036520A CN105036520A CN201510420100.4A CN201510420100A CN105036520A CN 105036520 A CN105036520 A CN 105036520A CN 201510420100 A CN201510420100 A CN 201510420100A CN 105036520 A CN105036520 A CN 105036520A
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Abstract
The present invention discloses a deposition furnace for preparing a quartz glass mound. The deposition furnace comprises a furnace body; the furnace comprises a furnace top, a furnace wall and a furnace bottom, which form a furnace hearth; a burner is disposed on the furnace top; a base rod vertically extends into the furnace from the furnace bottom, and can move on a vertical direction relative to the furnace body, and rotates with the of the axis as a rotation axis; a deposition substrate is provided on top of the base rod, and is fixedly connected with the base rod; the deposition substrate has diameter greater than the diameter of the base rod; the deposition substrate provides a basis for the deposition of the quartz glass mound; an auxiliary heating device is around the periphery of the deposition substrate within the furnace hearth and is for increasing the edge temperature of the quartz glass deposition mound. The invention reduces the temperature gradient of deposition surface, increase the distribution consistency of the ingredients of the quartz glass deposition mound, and produces quartz glass deposition mound with uniform radial and axial structure.
Description
Technical field
The present invention relates to silica glass stone roller preparing technical field, particularly relate to a kind of cvd furnace preparing silica glass stone roller.
Background technology
High evenly synthetic quartz glass is the irreplaceable key foundation material of the high-tech areas such as space flight, nuclear technique, laser, precision instrument, the uneven image quality having a strong impact on optical system of optics.
At present, the melting method of synthetic quartz glass stone roller mainly contains horizontal cvd furnace chemical Vapor deposition process and vertical cvd furnace chemical Vapor deposition process.Due to horizontal cvd furnace chemical Vapor deposition process cannot production large size, high weight silica glass stone roller, and furnace temperature is low, energy consumption is large and efficiency is low, progressively replace by vertical cvd furnace chemical vapour deposition.In existing vertical cvd furnace chemical vapour deposition technique, react with gaseous silicon in burner tremie pipe after mainly producing water vapour by hydrogen and oxygen being burnt in the burner and produce silica dioxide granule, silica dioxide granule is deposited directly on basic rod and forms silica glass stone roller.In deposition silica glass stone roller process, the centrifugal force cut or polish jade with an emery wheel by the silica glass of high-temperature fusion and action of gravity, be forced to the silica glass progressively growth and shaping to edge diffusion at center, to obtain larger-diameter silica glass stone roller.And in order to ensure the stable formation that silica glass is cut or polish jade with an emery wheel, inevitable requirement deposited weight surface exists certain thermograde, center is consistent with edge temperature else if, the flowing that glass metal at high temperature can be unlimited, and causing silica glass to cut or polish jade with an emery wheel cannot be shaped.Therefore, adopt the method deposition synthetic quartz glass, no matter how many burners are set, all require that the thermograde of depositional plane is at least more than 200 DEG C.
Larger difference is there is in the center that the thermograde of depositional plane can make silica glass cut or polish jade with an emery wheel to the structure of edge, hydroxy radical content as silica glass centrally arrives edge to be reduced gradually, which results in the specific refractory power of silica glass, density equal distribution is uneven, and then affect the structural uniformity in depositional plane direction of silica glass.Simultaneously, the sedimentation mechanism adopting this cvd furnace to manufacture silica glass stone roller relies on centrifugal force and action of gravity to be forced to progressively spread to edge by center and formed, namely whole depositional plane is normal distribution form, there is stratiform phenomenon in the genesis analysis causing silica glass to be cut or polish jade with an emery wheel, has had a strong impact on its vertical structure homogeneity.Therefore, adopt the silica glass of existing cvd furnace manufacture to cut or polish jade with an emery wheel and all there is the uneven phenomenon of structure, and then affect the performance such as optical homogeneity, stress of a peacekeeping three-dimensional of silica glass, finally destroy the image quality of the field precision optical systems such as space flight, nuclear technique, precision instrument.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of cvd furnace prepared silica glass and cut or polish jade with an emery wheel, and main purpose is the thermograde reducing depositional plane, improves the consistence of silica glass stone roller component distribution, produces radial direction and cut or polish jade with an emery wheel with the uniform silica glass of axial arrangement.
For achieving the above object, the present invention mainly provides following technical scheme:
On the one hand, embodiments provide a kind of cvd furnace preparing silica glass stone roller, comprising:
Body of heater, described body of heater is made up of furnace roof, furnace wall and furnace bottom, and described furnace roof, furnace wall and furnace bottom surround burner hearth;
Burner, is arranged at furnace roof;
Basic rod, vertically extend in described burner hearth from described furnace bottom, described basic rod can move in vertical direction relative to body of heater, and described basic rod can its axis be that turning axle rotates;
Deposition substrate, is located at the top of basic rod, is fixedly connected with basic rod, and the diameter of described deposition substrate is greater than the diameter of basic rod, and described deposition substrate provides basis for deposition that silica glass is cut or polish jade with an emery wheel;
Assisted heating device, is arranged around the periphery of deposition substrate in described burner hearth, for improving quartz glass deposition stone roller lip temperature.
As preferably, described deposition substrate is sedimentation basin, and described sedimentation basin is surrounded by bottom surface and sidewall.
As preferably, the sidewall of described sedimentation basin and the angle of bottom surface are 90 ° ~ 150 °.
As preferably, the material of described deposition substrate is refractory materials, and described refractory materials is aluminum oxide, zirconium white or zircon English.
As preferably, described assisted heating device is Resistant heating, heat rod or oxyhydrogen flame burner.
As preferably, arrange a circle furnace lining between described assisted heating device and deposition substrate, described furnace lining has multiple heat conduction through hole, the diameter of heat conduction through hole is 2mm ~ 20mm.
As preferably, described furnace lining adopts silicon carbide, silicon nitride or aluminum oxide to make.
As preferably, the angle of described burner and vertical line is 0 ° ~ 45 °.
As preferably, the number of described burner is no more than 2.
As preferably, the distance between burner outlet and deposited weight surface is 200mm ~ 400mm, and in deposition process, burner outlet is to the constant distance of depositional plane.
As preferably, the bottom of cvd furnace arranges 1 ~ 4 tail gas exhaust mouth, and adopts and force air exhausting device, the tail gas produced in deposition burner hearth is discharged in order, in guarantee deposition burner hearth, airflow field is stable, and makes to form pressure-fired in deposition burner hearth, prevents outside air from entering and deposits in burner hearth.
Compared with prior art, beneficial effect of the present invention is:
The cvd furnace of what the embodiment of the present invention provided prepare silica glass stone roller adopts assisted heating device can improve the temperature at quartz glass deposition stone roller edge, reduce the thermograde of depositional plane, make the temperature at depositional plane center to edge consistent as far as possible, to further ensure in silica glass the components such as hydroxyl radially even with axial distribution, thus improve the structural uniformity of silica glass.And assisted heating device improves depositing temperature together with burner makes silicon-dioxide free diffusing in deposition process, ensure that in silica glass, the component such as hydroxyl is radially even with axial distribution.Thus improve the structural uniformity of silica glass.Improved the edge of depositional plane and the temperature of entirety of quartz glass deposition stone roller by assisted heating device in the embodiment of the present invention, avoid and adopt multiple burner to improve depositional plane temperature to cause air turbulence in burner hearth, so cause silica glass cut or polish jade with an emery wheel in form the problem of bubble, the major quality defect such as uneven.
Accompanying drawing explanation
Fig. 1 is the structural representation of the cvd furnace of the embodiment of the present invention 1.
Fig. 2 is the structural representation of the cvd furnace of the embodiment of the present invention 2.
Fig. 3 is the structural representation of the cvd furnace of the embodiment of the present invention 3.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but not as a limitation of the invention.In the following description, the not necessarily same embodiment that different " embodiment " or " embodiment " refers to.In addition, special characteristic, structure or feature in one or more embodiment can be combined by any suitable form.
Fig. 1 to Fig. 3 is the structural representation of the cvd furnace of different embodiments of the invention.As shown in Figure 1 to Figure 3, prepare the cvd furnace of silica glass stone roller, comprising:
Body of heater, body of heater is made up of furnace roof 5, furnace wall 7 and furnace bottom 10, and furnace roof 5, furnace wall 7 and furnace bottom 10 surround burner hearth 11;
Burner 4, is arranged at furnace roof 5;
Basic rod 8, vertically extend in burner hearth 11 from furnace bottom 10, basic rod 8 can move in vertical direction relative to body of heater, and basic rod can its axis be that turning axle rotates;
Deposition substrate 1, is located at the top of basic rod 8, is fixedly connected with basic rod, and the diameter of deposition substrate 1 is greater than the diameter of basic rod 8, and deposition substrate 1 provides basis for deposition that silica glass is cut or polish jade with an emery wheel;
Assisted heating device 3, is arranged around the periphery of deposition substrate 1 in burner hearth 11, for improving quartz glass deposition stone roller lip temperature.
The cvd furnace preparing silica glass stone roller of the embodiment of the present invention adopts assisted heating device to improve the temperature at quartz glass deposition stone roller edge, reduce the thermograde of depositional plane, make the temperature at depositional plane center to edge consistent as far as possible, improve the bulk temperature of depositional plane simultaneously, to further ensure in silica glass the components such as hydroxyl radially even with axial distribution, thus improve the structural uniformity of silica glass.And assisted heating device improves depositing temperature together with maximum two burners makes silicon-dioxide free diffusing in deposition process, ensure that in silica glass, the component such as hydroxyl is radially even with axial distribution.Assisted heating device 3 avoids to be increased depositing temperature by the quantity increasing burner 4 in prior art and causes the problem of the disorder of airflow field in burner hearth.Air-flow in deposition process between each burner and flame etc. is disturbing influence mutually, upsets the airflow field in burner hearth.Have impact on the stably depositing of silica glass stone roller, and cause silica glass cut or polish jade with an emery wheel in form bubble, the major quality defect such as uneven, the silica glass stone roller obtained cannot be used.The embodiment of the present invention improves the bulk temperature of depositional plane and the temperature at depositional plane edge by assisted heating device 3, makes airflow field smooth and easy, ensure that the stably depositing that silica glass is cut or polish jade with an emery wheel, and then improves the formation of its inner quality, minimizing defect.
Preferred as above-described embodiment, deposition substrate 1 is sedimentation basin, and sedimentation basin is surrounded by bottom surface and sidewall.Sedimentation basin can ensure the unrestricted flow of deposition process silicon-dioxide, ensures the uniformity of the silica glass stone roller generated.In the present embodiment, have employed cvd furnace can make the temperature of depositional plane bring up to 1300 DEG C ~ 1800 DEG C, namely temperature is minimum is 1300 DEG C, the temperature changing the edge of depositional plane in prior art must lower than the restriction of 1300 DEG C, in the present embodiment, the temperature at the edge of depositional plane can be increased to more than 1600 DEG C, ensures the temperature distribution evenness of deposited weight surface, reduces thermograde, ensure that the free diffusing of silicon-dioxide, improve the homogeneity of silica glass stone roller.The sidewall of sedimentation basin and the angle of bottom surface are 90 ° ~ 150 °.In embodiment as shown in Figure 1, the sidewall of sedimentation basin 1 and the angle of bottom surface are 120 °; In embodiment shown in Fig. 2, the sidewall of sedimentation basin 1 and the angle of bottom surface are 140 °; In embodiment shown in Fig. 3, the sidewall of sedimentation basin 1 and the angle of bottom surface are 90 °.Be conducive to the stable and smooth and easy of airflow field, and ensure that silica glass stone roller can at high temperature be shaped, avoid deposition process to necessarily require deposited weight surface to there is the requirement of certain thermograde.The material of deposition substrate 1 is refractory materials, and the concrete material of deposition substrate 1 can select aluminum oxide, zirconium white and zircon English etc.Ensure sedimentation basin substrate intensity at high temperature, realize the function as silica deposit substrate in preparation process.
Preferred as above-described embodiment, the type of heating of assisted heating device 3 can be Resistant heating mode, heat rod type of heating or oxyhydrogen flame type of heating etc., and the concrete heating unit adopted can be heat rod (embodiment illustrated in fig. 1), Resistant heating (embodiment illustrated in fig. 2), heat rod or oxyhydrogen flame burner (embodiment illustrated in fig. 3) etc.
Preferred as above-described embodiment, arranges a circle furnace lining 2 between assisted heating device 3 and deposition substrate 1.Furnace lining 2 is set and can makes assisted heating device 3 pairs of silica glass stone roller homogeneous heatings, avoid localized hyperthermia.Further, in order to make the heat of assisted heating device 3 act on rapidly silica glass stone roller, furnace lining 2 is offered multiple heat conduction through hole, it is inner that heat enters furnace lining 2 fast by heat conduction through hole, and ensure that homogeneous heating simultaneously.Heat conduction through hole can be uniformly distributed on furnace lining 2, also can stochastic distribution.The diameter of heat conduction through hole is 2mm ~ 20mm.Can make in this pore diameter range heat quickly through, can ensure again heat homogeneity.Furnace lining 2 adopts refractory materials to make equally, and the material of furnace lining 2 specifically can adopt silicon carbide, silicon nitride or aluminum oxide etc.Can withstand higher temperatures, can not damage because of the high temperature in deposition process.
In the embodiment of the present invention, furnace wall 7 has thermal insulation layer 71, to reduce calorific loss, keeps the high temperature in burner hearth, and can the thermograde of less radial direction.Thermal insulation layer 71 adopts high-temperature-resistant thermal-insulation material to make, as resistant to elevated temperatures inorganic heat insulation materials such as rock wools.
Preferred as above-described embodiment, burner 4 mostly is two most.Avoid three even more multi-combustor time, the mutually disturbing influence such as the air-flow in deposition process between each burner and flame, upsets the airflow field in burner hearth.Because the disorder of airflow field in deposition process have impact on the stably depositing of silica glass stone roller, and cause silica glass cut or polish jade with an emery wheel in form bubble, the major quality defect such as uneven, the silica glass stone roller obtained cannot be used.During two burners 4, the circumference of furnace roof is uniformly distributed.Ensure that the silicon-dioxide drop point generated is even.Burner 4 is 0 ° ~ 45 ° with the angle of vertical line.In this angular range, can ensure that the silica dioxide granule produced all is fallen on depositional plane.Middle burner 4 embodiment illustrated in fig. 1 is 1, and burner 4 is 30 ° with the angle of vertical line.Middle burner 4 embodiment illustrated in fig. 2 is 2, and 2 burners 4 are 30 ° with the angle of vertical line.Middle burner 4 embodiment illustrated in fig. 3 is 1, and burner 4 is vertically installed in the center of furnace roof.The distance (deposited distance) that burner 4 exports between deposited weight surface is 200mm ~ 400mm, and in deposition process, burner outlet is to the constant distance (maintenance deposited distance is constant) of depositional plane.Keep that deposited distance is constant can ensure that the drop point of silicon-dioxide in deposition process and velocity of diffusion are consistent, ensure that the quality that silica glass is cut or polish jade with an emery wheel.Realize material balance in deposition process simultaneously.
Preferred as above-described embodiment, the bottom of cvd furnace arranges 1 ~ 4 tail gas exhaust mouth 9, and adopt pressure air exhausting device, the tail gas produced in deposition burner hearth is discharged in order, in guarantee deposition burner hearth, airflow field is stable, and make to form pressure-fired in deposition burner hearth, prevent outside air from entering in deposition burner hearth.Avoid the silica glass stone roller polluting burner hearth and deposition synthesis, improve the purity of silica glass stone roller, and then improve the structural uniformity of silica glass.
The process that the cvd furnace of the embodiment of the present invention 1 prepares silica glass stone roller is as follows:
The formation of silica dioxide granule: silicon tetrachloride raw material directly enters silicon tetrachloride vapo(u)rization system, produce silicon tetrachloride steam, regulated by mass flow controller and enter the silicon tetrachloride steam of burner 4 and the flow of hydrogen and oxygen, there is chemical reaction in silicon tetrachloride steam, form silica dioxide granule in the oxyhydrogen flame of burning; Flow those skilled in the art of each unstripped gas can set as required, or adopt the flow of prior art.In the present embodiment, silicon tetrachloride vapor flow rate is 20g/min, and silicon tetrachloride steam enters the center material pipe of burner 4, and in burner 4, the flow of hydrogen and oxygen is respectively 330L/min and 170L/min.The number of burner 4 and setting angle can be determined as required, or directly adopt prior art.In the present embodiment, burner is one, is uniformly distributed in the circumferential, and the angle of burner and vertical line is 30 °.
The deposition of silica dioxide granule: the silica dioxide granule formed in oxyhydrogen flame continues fusing and is progressively deposited in the spill sedimentation basin 1 of rotation with diffusion under the depositing temperature of setting, keep the thermograde of depositional plane in deposition process in the scope of setting, the thermograde of depositional plane is less, in silica glass, the component such as hydroxyl is radially more even with axial distribution, thus improves the structural uniformity of silica glass.Adopt the cvd furnace of the embodiment of the present invention to prepare the thermograde controlling depositional plane in the process of silica glass stone roller and be less than 20 DEG C, the temperature of depositional plane controls at 1300 DEG C ~ 1800 DEG C.The depositional plane temperature keeping silica glass to cut or polish jade with an emery wheel 6 in the present embodiment in deposition process is about 1500 DEG C, and the maximum temperature gradient of depositional plane from edge to center is 10 DEG C.In the present embodiment, sedimentation basin 1 adopts aluminum oxide processing and fabricating to form, and the sidewall of sedimentation basin 1 and the angle of bottom surface are 120 °.Make basic rod 8 rotate and decline by machine-control automation in deposition process, the sedimentation basin 1 being positioned at basic rod top is communicated with basic rod and together rotates and decline continuously, thus drives synthetic quartz glass stone roller 6 to decline thereupon, keeps deposited distance constant.In the present embodiment, deposited distance is 300mm.Arrange 2 symmetrical tail gas exhaust mouths 9 in the present embodiment in the below of cvd furnace, and adopt and force air exhausting device, ensure that the freeze profile of cvd furnace becomes pressure-fired, pressure is 2.5pa.
Synthetic quartz glass stone roller formation: carrying out continuously by above-mentioned steps, in sedimentation basin synthetic quartz glass stone roller grow gradually, deposit after 20 days, blowing out, obtained weight is about 80Kg, diameter is Φ 500mm, the synthetic quartz glass of high 185mm cut or polish jade with an emery wheel.Certainly, also can by the size of internal diameter of adjustment sedimentation basin and the height of sidewall to obtain the synthetic quartz glass stone roller of other specifications.
The performance that the synthetic quartz glass of above-mentioned acquisition is cut or polish jade with an emery wheel is detected: cut into the thick silica glass blank of two pieces of about 85mm by depositing the silica glass stone roller obtained, and blank is carried out fine annealing, again after the cold working operations such as round as a ball, milling, flat stone mill, grinding and polishing, obtained two block specifications are of a size of the silica glass shaped blank sheet of Φ 480mm × 80mm.The optical homogeneity utilizing planar laser interferometer to detect above-mentioned two pieces of silica glass shaped blank sheets is respectively 3.5 × 10
-6with 3.8 × 10
-6.And do not adopt the obtained silica glass optical homogeneity of the existing vertical chemical Vapor deposition process of the sedimentation basin in the embodiment of the present invention to be only 12 × 10
-6, compared with the silica glass blank optical homogeneity obtained with adopting the cvd furnace of the embodiment of the present invention, there is larger gap.The silica glass stone roller that the cvd furnace of the obvious employing embodiment of the present invention is obtained belongs to high evenly synthetic quartz glass stone roller.The silica glass stone roller adopting embodiment 2 and the cvd furnace shown in embodiment 3 to prepare reaches the standard of high evenly synthetic quartz glass stone roller equally.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (10)
1. prepare the cvd furnace of silica glass stone roller, it is characterized in that, comprising:
Body of heater, described body of heater is made up of furnace roof, furnace wall and furnace bottom, and described furnace roof, furnace wall and furnace bottom surround burner hearth;
Burner, is arranged at furnace roof;
Basic rod, vertically extend in described burner hearth from described furnace bottom, described basic rod can move in vertical direction relative to body of heater, and described basic rod can its axis be that turning axle rotates;
Deposition substrate, is located at the top of basic rod, is fixedly connected with basic rod, and the diameter of described deposition substrate is greater than the diameter of basic rod, and described deposition substrate provides basis for deposition that silica glass is cut or polish jade with an emery wheel;
Assisted heating device, is arranged around the periphery of deposition substrate in described burner hearth, for improving quartz glass deposition stone roller lip temperature.
2. the cvd furnace preparing silica glass stone roller according to claim 1, it is characterized in that, described deposition substrate is sedimentation basin, and described sedimentation basin is surrounded by bottom surface and sidewall.
3. the cvd furnace preparing silica glass stone roller according to claim 2, it is characterized in that, the sidewall of described sedimentation basin and the angle of bottom surface are 90 ° ~ 150 °.
4. the cvd furnace preparing silica glass stone roller according to claim 1, it is characterized in that, the material of described deposition substrate is refractory materials, and described refractory materials is aluminum oxide, zirconium white or zircon English.
5. the cvd furnace preparing silica glass stone roller according to claim 1, is characterized in that, described assisted heating device is Resistant heating, heat rod or oxyhydrogen flame burner.
6. the cvd furnace preparing silica glass stone roller according to claim 1, it is characterized in that, arrange a circle furnace lining between described assisted heating device and deposition substrate, described furnace lining has multiple heat conduction through hole, the diameter of heat conduction through hole is 2mm ~ 20mm.
7. the cvd furnace preparing silica glass stone roller according to claim 6, is characterized in that, described furnace lining adopts silicon carbide, silicon nitride or aluminum oxide to make.
8. the cvd furnace preparing silica glass stone roller according to claim 1, it is characterized in that, the angle of described burner and vertical line is 0 ° ~ 45 °.
9. the cvd furnace preparing silica glass stone roller according to claim 1, it is characterized in that, the number of described burner is no more than 2; Distance between burner outlet and deposited weight surface is 200mm ~ 400mm, and in deposition process, burner outlet is to the constant distance of depositional plane.
10. the cvd furnace preparing silica glass stone roller according to claim 1, it is characterized in that, the bottom of cvd furnace arranges 1 ~ 4 tail gas exhaust mouth, and adopt pressure air exhausting device, the tail gas produced in deposition burner hearth is discharged in order, in guarantee deposition burner hearth, airflow field is stable, and makes to form pressure-fired in deposition burner hearth, prevents outside air from entering and deposits in burner hearth.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106810056A (en) * | 2017-03-20 | 2017-06-09 | 无锡市孚艾科技有限公司 | A kind of high purity quartz process units |
| CN108467184A (en) * | 2018-01-30 | 2018-08-31 | 中国建筑材料科学研究总院有限公司 | The preparation method and device of a kind of high uniformly quartz glass of large scale |
| CN114349310A (en) * | 2021-12-29 | 2022-04-15 | 中建材衢州金格兰石英有限公司 | Large-diameter quartz lead smelting furnace |
| CN114735926A (en) * | 2022-03-31 | 2022-07-12 | 江苏亨芯石英科技有限公司 | Device and method for preparing high-quality quartz for semiconductor mask |
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| EP1681276A1 (en) * | 2004-09-30 | 2006-07-19 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass excelling in plasma corrosion resistance and process for producing the same |
| CN104326646A (en) * | 2014-10-23 | 2015-02-04 | 中国建筑材料科学研究总院 | Titanium-doped quartz glass and preparation method and preparation device of quartz glass |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1681276A1 (en) * | 2004-09-30 | 2006-07-19 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass excelling in plasma corrosion resistance and process for producing the same |
| CN104326646A (en) * | 2014-10-23 | 2015-02-04 | 中国建筑材料科学研究总院 | Titanium-doped quartz glass and preparation method and preparation device of quartz glass |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106810056A (en) * | 2017-03-20 | 2017-06-09 | 无锡市孚艾科技有限公司 | A kind of high purity quartz process units |
| CN106810056B (en) * | 2017-03-20 | 2022-11-15 | 杭州永通智造科技有限公司 | High-purity quartz production device |
| CN108467184A (en) * | 2018-01-30 | 2018-08-31 | 中国建筑材料科学研究总院有限公司 | The preparation method and device of a kind of high uniformly quartz glass of large scale |
| CN108467184B (en) * | 2018-01-30 | 2023-09-19 | 中国建筑材料科学研究总院有限公司 | Preparation method and device of large-size high-uniformity quartz glass |
| CN114349310A (en) * | 2021-12-29 | 2022-04-15 | 中建材衢州金格兰石英有限公司 | Large-diameter quartz lead smelting furnace |
| CN114735926A (en) * | 2022-03-31 | 2022-07-12 | 江苏亨芯石英科技有限公司 | Device and method for preparing high-quality quartz for semiconductor mask |
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