CN105023746A - Internal field intensity balancing method for medium-voltage mutual inductor - Google Patents
Internal field intensity balancing method for medium-voltage mutual inductor Download PDFInfo
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- CN105023746A CN105023746A CN201510453222.3A CN201510453222A CN105023746A CN 105023746 A CN105023746 A CN 105023746A CN 201510453222 A CN201510453222 A CN 201510453222A CN 105023746 A CN105023746 A CN 105023746A
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Abstract
The invention discloses an internal field intensity balancing method for medium-voltage mutual inductor. The method comprises the following steps: performing region partition according to a field intensity distribution situation between a primary winding and a secondary winding obtained through structural analysis of the mutual inductor; winding the outermost layer of the primary winding with semiconductor crinkled paper of different surface resistance values, wherein the semiconductor crinkled paper of lower surface resistance values is wound in regions with higher field intensities between the primary winding and secondary winding, and the semiconductor crinkled paper of larger surface resistance values is wound in regions with lower field intensities between the primary winding and secondary winding; and assembling the primary winding and the secondary winding, and filling the space between the primary winding and the secondary winding with a main insulator. Through adoption of the method, the field intensities between the primary winding and the secondary winding can be balanced; the partial discharge amount is reduced; the original structures of the primary winding and the secondary winding are kept constant; and the parameters of the medium-voltage mutual inductor are not reduced.
Description
Technical field
The present invention relates to instrument transformer technical field, particularly the method for middle pressure instrument transformer internal balance field intensity.
Background technology
Instrument transformer is also called instrument transformer, is the general designation of current transformer and voltage transformer.High voltage can be become low-voltage, big current becomes small area analysis, for measuring or protection system.High voltage or big current scaling transformation are mainly become normal low voltage or standard small area analysis by its function, to realize standardization, the miniaturization of measuring instrument, proterctive equipment and automatic control equipment.
Middle pressure instrument transformer refers to primary side voltage 3kV-35kV, middle pressure instrument transformer need examine inner partial discharge quantity, partial discharge quantity is the smaller the better, and the factor affecting partial discharge quantity is exactly the balanced intensity of inner field intensity, the inside of middle pressure instrument transformer comprises winding, secondary winding, insulating material and a semiconducting shield materials etc., relatively complicated, so the distribution of field intensity is not very regular.As shown in Figure 1, field intensity mainly concentrates on a winding 10 and secondary winding 20 apart from closer place, and relevant with the gap length of secondary winding 20 with a winding 10 in general, gap is less, and field intensity is then higher.(namely illustrating A district) field intensity that another winding is positioned at the end of secondary winding is the highest, its similar coaxial cable structure, and place's field intensity of lifting one's head of coaxial cable is the highest.
In order to prevent partial discharge; now many employings are at a winding and secondary winding surface wrap semiconducting shield materials; do not carry out special process and carry out balanced electric field; during as run into the project to partial discharge quantity requirement is higher; in order to reduce partial discharge quantity; often through increase once with the insulation distance of secondary winding and realizing, this mode will certainly sacrifice other parameter, and such as capacity, protection multiple and precision reduce.Or, increase metallic shield net between winding and secondary winding at one time, not only troublesome poeration, also add the probability of insulation breakdown.
Given this, the present inventor develops the method for middle pressure instrument transformer internal balance field intensity for this reason, and effectively solve the problems referred to above, this case produces thus.
Summary of the invention
The method of middle pressure instrument transformer internal balance field intensity provided by the invention, a field intensity equalization between winding and secondary winding can be made, reduce partial discharge quantity, and the structure maintaining an original winding and secondary winding is constant, presses the parameter of instrument transformer in can not reducing.
To achieve these goals, technical scheme of the present invention is as follows:
The method of middle pressure instrument transformer internal balance field intensity, first a field strength distribution situation between winding and secondary winding is obtained according to the structural analysis of instrument transformer, Region dividing is carried out again according to the size distribution situation analyzing the field intensity between winding and secondary winding obtained, the semiconductor crimped paper with different surface resistance value is wound around at a winding outermost layer, surface resistance is worth little semiconductor crimped paper and is wrapped in the high region of field intensity between winding and secondary winding, the semiconductor crimped paper that surface resistance value is large is wrapped in the low region of field intensity between winding and secondary winding, finally a winding and secondary winding are assembled, and fill main insulation at one time between winding and secondary winding.
Further, to filled main insulation assemble after a winding and secondary winding carry out partial discharge quantity detection, judging whether to exceed standard according to testing result, as exceeded, then changing the size that above-mentioned zone divides, or divide more region, change semiconductor crimped paper again, then fill main insulation and carry out partial discharge quantity detection, as partial discharge quantity also exceeds standard, then repeatedly carry out several times, till reaching standard.
Wherein main insulation is epoxy resin.
Further, a described winding is passed in the middle of secondary winding, ensure between winding and secondary winding, to there is clearance for insulation one time, the end that a winding is positioned at secondary winding is wound around surface resistance and is worth the first minimum semiconductor crimped paper, a winding is positioned at secondary winding inside and is wound around the second semiconductor crimped paper, the surface resistance value of the second semiconductor crimped paper is greater than the first semiconductor crimped paper, the outside that a winding is positioned at secondary winding is extremely far wound around the second semiconductor crimped paper and the 3rd semiconductor crimped paper respectively by near, the surface resistance value of the 3rd semiconductor crimped paper is greater than the second semiconductor crimped paper.
The surface resistance value of described semiconductor crimped paper is 10k Ω-20k Ω/cm.
After adopting such scheme, the present invention, according to the distribution situation of a different field intensity between winding and secondary winding, adopts the semiconductor crimped paper of different surface resistance value to carry out grading screen.For this instrument transformer being loaded on medium voltage network, it will have insulation characterisitic, with make high pressure and low pressure isolated, generally all fill main insulation between winding and secondary winding as spacer medium at one time.Dielectric loss is produced through the outer surface of semiconductor crimped paper shielding wrapping and the interfacial polarization of main insulation.The size of dielectric loss and the surface resistance value of semiconductor material surface have relation, it can increase with it and increase, that is, the dielectric loss of low areal resistance blind zone reduces, the dielectric loss of high surface resistance blind zone raises, the thickness being equivalent to the main insulation between winding and secondary winding there occurs trickle change, therefore make the field intensity in these regions closer to, thus reach and reduce the object of partial discharge quantity.The effect of the balanced field intensity of the present invention clearly, obviously can reduce partial discharge quantity, and due to the thinner thickness of semiconductor crimped paper, little on a clearance for insulation impact between winding and secondary winding, the structure maintaining an original winding and secondary winding is constant, press the parameter of instrument transformer in can not reducing, and adopt semiconductor crimped paper but not metallic shield net, therefore can not increase breakdown probability.
Accompanying drawing explanation
Fig. 1 is the structural representation of prior art;
Fig. 2 is the structural representation of the present embodiment;
Fig. 3 is the secondary winding structural representation that the present embodiment is wound around semiconductor crimped paper.
Label declaration
A winding 10, secondary winding 20;
A winding 1, secondary winding 2, semiconductor crimped paper 3, first semiconductor crimped paper 31, second semiconductor crimped paper the 32, three semiconductor crimped paper 33.
Embodiment
In order to explain technical scheme of the present invention further, below by specific embodiment, the present invention will be described in detail.
As shown in Figure 2, it is the method for the wherein a kind of middle pressure instrument transformer internal balance field intensity that the present invention discloses, first according to the structural analysis of instrument transformer and the field strength distribution situation obtained between a winding 1 and secondary winding 2, again according to the size cases analyzing field intensity between a winding 1 obtaining and secondary winding 2, be wound around the semiconductor crimped paper 3 with different surface resistance value at winding 1 outermost layer, be called grading screen herein.
Wherein a kind of structure of instrument transformer is, is passed by a winding 1 in the middle of secondary winding 2.Again shown in composition graphs 3, in order to specification configuration feature, in figure, the closeer surface resistance value representing semiconductor crimped paper 3 of lines is larger.
Surface resistance is worth the first minimum semiconductor crimped paper 31 and is arranged on the region that between a winding 1 and secondary winding 2, field intensity is the highest, the region A that such as in diagram, lines are the most loose, a winding 1 is positioned at the end of secondary winding 2, field intensity is the highest herein, and winding 1 outermost layer on the A of region is wound around surface resistance and is worth the first minimum semiconductor crimped paper 31.
Surface resistance value slightly little the second semiconductor crimped paper 32 be arranged on the region that between a winding 1 and secondary winding 2, field intensity is slightly low, the region B that such as in diagram, lines are slightly close, one time winding 1 is positioned at secondary winding 2 inside, or a winding 1 is positioned at the region at close secondary winding 2 two ends outside secondary winding 2, the surface resistance value that winding 1 outermost layer on the B of region is wound around the second semiconductor crimped paper 32, second semiconductor crimped paper 32 is greater than the first semiconductor crimped paper 31.
Surface resistance value minimum the 3rd semiconductor crimped paper 33 be arranged on the region that between a winding 1 and secondary winding 2, field intensity is minimum, the region C that such as in diagram, lines are the most intensive, winding 1 is positioned at the region away from secondary winding 2 two ends outside secondary winding 2, the surface resistance value that winding 1 outermost layer on the C of region is wound around the 3rd semiconductor crimped paper the 33, three semiconductor crimped paper 33 is greater than the second semiconductor crimped paper 32.
A winding 1 after winding semiconductor crimped paper 3 and secondary winding 2 are assembled, between a winding 1 and secondary winding 2, fills conventional main insulation during assembling, such as oilpaper, SF
6, epoxy resin and organic combined insulated material etc.
Because the dielectric loss at little semiconductor crimped paper 3 place of surface resistance is low, the dielectric loss at semiconductor crimped paper 3 place that surface resistance is large is high, therefore the region low from field intensity, the region that field intensity is high achieves equilibrium by the semiconductor crimped paper of this different surface resistance value, obviously can reduce partial discharge quantity.Wherein when the main insulation of filling is epoxy resin (not shown), effect is best, epoxy resin is relative to fluidic main insulation, and its dielectric loss stability produced is best, and the surface resistance value of general semiconductor crimped paper 3 selects 10k Ω-20k Ω/cm effect best.
After completing above-mentioned steps, as optimization, a winding 1 after assembling the complete main insulation of above-mentioned filling and secondary winding 2 carry out partial discharge quantity detection, judge whether to exceed standard according to testing result, as exceeded, then change the size that above-mentioned zone divides, or divide more region, then change semiconductor crimped paper 3, then fill main insulation and carry out partial discharge quantity detection, as partial discharge quantity also exceeds standard, then repeatedly carry out several times, till reaching standard.Owing to pressing the structure of instrument transformer to be fixing in each finished product, field strength distribution situation is also identical, when therefore determining the resistance of the semiconductor crimped paper 3 that instrument transformer is wound around, namely may be used on other instrument transformers homostructural with it.
The present embodiment owing to being only wound around the semiconductor crimped paper 3 of thinner thickness outside a winding 1, very little on the clearance for insulation impact between a winding 1 and secondary winding 2, the structure maintaining an original winding 1 and secondary winding 2 is constant, the parameter of instrument transformer is pressed in can not reducing, moreover adopt semiconductor crimped paper 3 but not metallic shield net, therefore can not increase breakdown probability.
These are only preferred embodiment of the present invention, the restriction not to protection scope of the present invention.All equivalent variations done according to the mentality of designing of this case, all fall into the protection range of this case.
Claims (5)
1. press the method for instrument transformer internal balance field intensity in, it is characterized in that: first obtain a field strength distribution situation between winding and secondary winding according to the structural analysis of instrument transformer; Region dividing is carried out again according to the height distribution situation analyzing the field intensity between winding and secondary winding obtained, the semiconductor crimped paper with different surface resistance value is wound around at a winding outermost layer, surface resistance is worth little semiconductor crimped paper and is wrapped in the high region of field intensity between winding and secondary winding, and the semiconductor crimped paper that surface resistance value is large is wrapped in the low region of field intensity between winding and secondary winding; Finally a winding and secondary winding are assembled, and fill main insulation at one time between winding and secondary winding.
2. the method for middle pressure instrument transformer internal balance field intensity as claimed in claim 1, it is characterized in that: to filled main insulation assemble after a winding and secondary winding carry out partial discharge quantity detection, judge whether to exceed standard according to testing result, as exceeded, then change the size that above-mentioned zone divides, or divide more region, change semiconductor crimped paper again, then fill main insulation and carry out partial discharge quantity detection, as partial discharge quantity also exceeds standard, then repeatedly carry out several times, till reaching standard.
3. the method for middle pressure instrument transformer internal balance field intensity as claimed in claim 1, is characterized in that: wherein main insulation is epoxy resin.
4. the method for middle pressure instrument transformer internal balance field intensity as claimed in claim 1, it is characterized in that: a described winding is passed in the middle of secondary winding, ensure between winding and secondary winding, to there is clearance for insulation one time, the end that a winding is positioned at secondary winding is wound around surface resistance and is worth the first minimum semiconductor crimped paper, a winding is positioned at secondary winding inside and is wound around the second semiconductor crimped paper, the surface resistance value of the second semiconductor crimped paper is greater than the first semiconductor crimped paper, the outside that a winding is positioned at secondary winding is extremely far wound around the second semiconductor crimped paper and the 3rd semiconductor crimped paper respectively by near, the surface resistance value of the 3rd semiconductor crimped paper is greater than the second semiconductor crimped paper.
5. the method for middle pressure instrument transformer internal balance field intensity as claimed in claim 1, is characterized in that: the surface resistance value of described semiconductor crimped paper is 10k Ω-20k Ω/cm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510453222.3A CN105023746B (en) | 2015-07-29 | 2015-07-29 | Method for equalizing field intensity in medium-voltage transformer |
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| CN201510453222.3A CN105023746B (en) | 2015-07-29 | 2015-07-29 | Method for equalizing field intensity in medium-voltage transformer |
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| CN105023746B CN105023746B (en) | 2020-03-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885596A (en) * | 2021-01-20 | 2021-06-01 | 浙江川丰电气科技有限公司 | Winding method of primary winding of voltage transformer coil |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5850714A (en) * | 1981-09-19 | 1983-03-25 | Toshiba Corp | Molded transformer |
| WO2006131011A1 (en) * | 2005-06-07 | 2006-12-14 | Abb Research Ltd | High-voltage bushing |
| CN104144600A (en) * | 2013-08-19 | 2014-11-12 | 国家电网公司 | Shielding ring, shielding structure and poured voltage transformer |
| CN204011030U (en) * | 2014-08-20 | 2014-12-10 | 南京智达电气有限公司 | Middle pressure pouring current transformer |
-
2015
- 2015-07-29 CN CN201510453222.3A patent/CN105023746B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5850714A (en) * | 1981-09-19 | 1983-03-25 | Toshiba Corp | Molded transformer |
| WO2006131011A1 (en) * | 2005-06-07 | 2006-12-14 | Abb Research Ltd | High-voltage bushing |
| CN104144600A (en) * | 2013-08-19 | 2014-11-12 | 国家电网公司 | Shielding ring, shielding structure and poured voltage transformer |
| CN204011030U (en) * | 2014-08-20 | 2014-12-10 | 南京智达电气有限公司 | Middle pressure pouring current transformer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885596A (en) * | 2021-01-20 | 2021-06-01 | 浙江川丰电气科技有限公司 | Winding method of primary winding of voltage transformer coil |
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| CN105023746B (en) | 2020-03-27 |
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