CN105016315A - Preparation method of graphene oxide composite material - Google Patents
Preparation method of graphene oxide composite material Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 50
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000007864 aqueous solution Substances 0.000 claims abstract description 17
- 239000006185 dispersion Substances 0.000 claims abstract description 17
- 239000011259 mixed solution Substances 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 5
- 239000010439 graphite Substances 0.000 claims abstract description 5
- 239000000843 powder Substances 0.000 claims abstract description 5
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 5
- 150000003624 transition metals Chemical class 0.000 claims abstract description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000003346 selenoethers Chemical class 0.000 claims abstract description 3
- 239000011669 selenium Substances 0.000 claims description 17
- 229910016001 MoSe Inorganic materials 0.000 claims description 13
- 238000001556 precipitation Methods 0.000 claims description 12
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910021382 natural graphite Inorganic materials 0.000 claims description 7
- 239000012286 potassium permanganate Substances 0.000 claims description 5
- 239000004317 sodium nitrate Substances 0.000 claims description 5
- 235000010344 sodium nitrate Nutrition 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 238000000703 high-speed centrifugation Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
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- 229910052711 selenium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010937 tungsten Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229940001516 sodium nitrate Drugs 0.000 claims 2
- 239000005864 Sulphur Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000013049 sediment Substances 0.000 claims 1
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- 238000005119 centrifugation Methods 0.000 description 36
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- 238000002296 dynamic light scattering Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 7
- 239000013590 bulk material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
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- 235000011149 sulphuric acid Nutrition 0.000 description 3
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- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 description 2
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 2
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- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种氧化石墨烯复合材料的制备方法,涉及复合材料。将MA粉末加入GO水溶液中,混合液超声后得到含有MA/GO的分散液,M为过渡金属或铋,A为氧族元素,MA为M的硫化物或M的硒化物;GO代表氧化石墨烯;MA/GO代表MA与GO的复合材料;将所得分散液的上层液低速离心,上清液高速离心,沉淀物清洗后分散在水中,得到MA/GO水溶液;或将所得分散液的上层液以2000~13000rpm进行分步离心,得到不同尺寸的MA/GO。所得的氧化石墨烯复合材料结构可调,分散液在水溶液中具有很好的稳定性,可在溶液体系中应用。可制备不同尺寸、厚度和结构的复合材料,而且该复合材料在pH3~9具有较好的分散性。The invention discloses a preparation method of a graphene oxide composite material, relating to the composite material. Add MA powder into GO aqueous solution, and the mixed solution is ultrasonically obtained to obtain a dispersion containing MA/GO, M is a transition metal or bismuth, A is an oxygen group element, MA is a sulfide of M or a selenide of M; GO stands for graphite oxide ene; MA/GO represents the composite material of MA and GO; the upper layer of the obtained dispersion is centrifuged at low speed, the supernatant is centrifuged at high speed, and the precipitate is washed and dispersed in water to obtain an MA/GO aqueous solution; or the upper layer of the obtained dispersion is centrifuged The solution was centrifuged step by step at 2000-13000rpm to obtain MA/GO with different sizes. The structure of the obtained graphene oxide composite material is adjustable, the dispersion liquid has good stability in aqueous solution, and can be applied in a solution system. Composite materials with different sizes, thicknesses and structures can be prepared, and the composite materials have good dispersibility at pH3-9.
Description
技术领域technical field
本发明涉及复合材料,具体涉及一种氧化石墨烯复合材料的制备方法。The invention relates to composite materials, in particular to a preparation method of graphene oxide composite materials.
背景技术Background technique
由于氧化石墨烯复合材料具有优异的理化性质,因此在生物传感器、光热治疗、催化剂、光电检测、锂离子电池等领域展现出比单独的二维材料更加优异的性能。[1-5]目前,氧化石墨烯复合材料的制备方法主要是化学气相沉积法(简称CVD)。[6-8]尽管通过CVD方法制备的复合材料性能很优越,但是制备过程非常复杂,而且成本较高,产率比较低。同时,制备的复合材料是固相,不能溶于水,不适合在溶液体系中应用。因此,寻找一种简单高效的方法用于水溶液中大规模制备水溶性的氧化石墨烯复合材料充满挑战性。Due to the excellent physical and chemical properties of graphene oxide composite materials, they have shown more excellent performance than individual two-dimensional materials in the fields of biosensors, photothermal therapy, catalysts, photoelectric detection, lithium-ion batteries, etc. [1-5] At present, the preparation method of graphene oxide composite material is mainly chemical vapor deposition (referred to as CVD). [6-8] Although the performance of composite materials prepared by CVD method is very superior, the preparation process is very complicated, and the cost is high, and the yield is relatively low. At the same time, the prepared composite material is a solid phase and cannot be dissolved in water, so it is not suitable for application in a solution system. Therefore, it is challenging to find a simple and efficient method for large-scale preparation of water-soluble GO composites in aqueous solution.
发明内容Contents of the invention
本发明的目的在于为了克服现有技术存在的上述缺点,提供所制得的氧化石墨烯复合材料不仅结构可调,而且在水溶液中具有良好稳定性,可用于溶液体系的一种氧化石墨烯复合材料的制备方法。The object of the present invention is to overcome the above-mentioned shortcomings existing in the prior art, and to provide the obtained graphene oxide composite material, which not only has an adjustable structure, but also has good stability in aqueous solution, and can be used in a graphene oxide composite material for solution systems. The method of preparation of the material.
本发明包括以下步骤:The present invention comprises the following steps:
1)将MA粉末加入到GO水溶液中,得到混合液,混合液超声后,得到含有MA/GO的分散液,其中,M代表过渡金属或铋,A代表氧族元素,MA代表M的硫化物或M的硒化物;GO代表氧化石墨烯;MA/GO代表MA与GO的复合材料;1) Add MA powder into the GO aqueous solution to obtain a mixed solution. After the mixed solution is ultrasonicated, a dispersion solution containing MA/GO is obtained, wherein M represents a transition metal or bismuth, A represents an oxygen group element, and MA represents a sulfide of M Or the selenide of M; GO stands for graphene oxide; MA/GO stands for the composite material of MA and GO;
2)将步骤1)所得分散液的上层液低速离心,再将低速离心后的上清液高速离心,将所得的沉淀物清洗后分散在水中,得到MA/GO水溶液;或2) centrifuging the supernatant of the dispersion obtained in step 1) at a low speed, then centrifuging the supernatant after low speed centrifugation at a high speed, washing the obtained precipitate and dispersing it in water to obtain an MA/GO aqueous solution; or
将步骤1)所得分散液的上层液以2000~13000rpm进行分步离心,得到不同尺寸的MA/GO。The supernatant of the dispersion liquid obtained in step 1) is centrifuged step by step at 2000-13000 rpm to obtain MA/GO of different sizes.
在步骤1)中,所述过渡金属可选自钨或钼等,所述氧族元素可选自硒或硫等,所述MA可选自WS2、Bi2Se3、MoSe2等中的一种;所述MA与GO的质量比可为1∶(0.1~2),优选1∶(0.5~1.7),最好为1∶0.25;所述混合液的pH可为3~9,优选6~8;所述超声的时间可为2~60h;In step 1), the transition metal can be selected from tungsten or molybdenum, etc., the oxygen group element can be selected from selenium or sulfur, etc., and the MA can be selected from WS 2 , Bi 2 Se 3 , MoSe 2 , etc. One; the mass ratio of MA and GO can be 1: (0.1~2), preferably 1: (0.5~1.7), preferably 1:0.25; the pH of the mixed solution can be 3~9, preferably 6-8; the ultrasonic time can be 2-60h;
在步骤1)中,所述GO水溶液的制备方法可为:用天然石墨粉为原料,加入硝酸钠、浓硫酸得到混合液,往混合液中加入高锰酸钾,然后在30~40℃下进行反应,再向反应混合物中加入水,并在90~100℃下继续反应,最后再加入水终止反应,再加入质量分数为30%的过氧化氢溶液,经洗涤、离心、干燥得到氧化石墨固体,氧化石墨固体在水中经超声得到分散均匀的GO水溶液;In step 1), the preparation method of the GO aqueous solution can be: use natural graphite powder as a raw material, add sodium nitrate and concentrated sulfuric acid to obtain a mixed solution, add potassium permanganate to the mixed solution, and then heat Carry out the reaction, then add water to the reaction mixture, and continue the reaction at 90-100°C, and finally add water to terminate the reaction, then add hydrogen peroxide solution with a mass fraction of 30%, wash, centrifuge, and dry to obtain graphite oxide Solid, graphite oxide solid in water is ultrasonically dispersed to obtain a uniformly dispersed GO aqueous solution;
所述浓硫酸是指浓度(浓度是指H2SO4的水溶液里H2SO4的质量百分比)大于等于70%的H2SO4的水溶液;The concentrated sulfuric acid refers to an aqueous solution of H2SO4 with a concentration (concentration refers to the mass percentage of H2SO4 in the aqueous solution of H2SO4 ) greater than or equal to 70% ;
所述天然石墨粉、硝酸钠与高锰酸钾的质量比可为2∶1∶6,所述天然石墨粉与浓硫酸的质量体积比可为1g∶23mL。The mass ratio of the natural graphite powder, sodium nitrate and potassium permanganate can be 2:1:6, and the mass volume ratio of the natural graphite powder and concentrated sulfuric acid can be 1g:23mL.
在步骤2)中,所述低速离心的速度可为400~3000rpm,高速离心的速度可为5000~20000rpm;所述分步离心包括:以2000rpm低速离心分别收集沉淀1和上清1,上清1再以6000rpm离心,分别收集沉淀2和上清2,上清2再以10000rpm离心分别收集沉淀3和上清3,上清3再以13000rpm离心分别收集沉淀4和上清4,其中所述沉淀1、沉淀2、沉淀3和沉淀4为不同尺寸的MA/GO。In step 2), the speed of the low-speed centrifugation can be 400-3000rpm, and the speed of high-speed centrifugation can be 5000-20000rpm; the step-by-step centrifugation includes: collecting the precipitate 1 and the supernatant 1 respectively by centrifuging at a low speed of 2000rpm, supernatant 1 was then centrifuged at 6000rpm to collect the precipitate 2 and supernatant 2 respectively, and the supernatant 2 was centrifuged at 10000rpm to collect the precipitate 3 and supernatant 3 respectively, and the supernatant 3 was centrifuged at 13000rpm to collect the precipitate 4 and supernatant 4 respectively, wherein Precipitation 1, Precipitation 2, Precipitation 3 and Precipitation 4 are MA/GO of different sizes.
采用本发明所得的氧化石墨烯复合材料结构可调,而且所得氧化石墨烯复合材料分散液在水溶液中具有很好的稳定性,可在溶液体系中应用。通过紫外、拉曼、原子力显微镜(AFM)、透射电镜(TEM)、XRD、动态光散射(DLS)、Zeta电位等分析方法,对复合材料的结构和分散性能进行表征证明,通过本发明可以制备不同尺寸、厚度和结构的复合材料,而且该复合材料在pH为3~9范围内具有较好的分散性,同时制备过程绿色环保,操作简单,成本较低,有利于氧化石墨烯复合材料的产业化生产。The structure of the graphene oxide composite material obtained by the invention is adjustable, and the obtained graphene oxide composite material dispersion liquid has good stability in aqueous solution, and can be applied in a solution system. Through ultraviolet, Raman, atomic force microscope (AFM), transmission electron microscope (TEM), XRD, dynamic light scattering (DLS), Zeta potential and other analytical methods, the structure and dispersion performance of the composite material are characterized and proved, and can be prepared by the present invention Composite materials with different sizes, thicknesses and structures, and the composite materials have good dispersion in the pH range of 3 to 9. At the same time, the preparation process is green and environmentally friendly, easy to operate, and low in cost, which is conducive to the development of graphene oxide composite materials. industrialized production.
附图说明Description of drawings
图1是本发明实施例1采用2000rpm离心的GO沉淀的原子力显微镜图。Fig. 1 is an atomic force microscope image of GO precipitated by centrifugation at 2000 rpm in Example 1 of the present invention.
图2是图1对应的高度对距离的曲线图。FIG. 2 is a graph of height versus distance corresponding to FIG. 1 .
图3是本发明实施例1所制备6000rpm离心后的GO沉淀的原子力显微镜图。Fig. 3 is an atomic force microscope image of GO precipitate prepared in Example 1 of the present invention after centrifugation at 6000 rpm.
图4是图3对应的高度对距离的曲线图。FIG. 4 is a graph of height versus distance corresponding to FIG. 3 .
图5是本发明实施例1所制备10000rpm离心后的GO沉淀的原子力显微镜图。Fig. 5 is an atomic force microscope image of GO precipitate prepared in Example 1 of the present invention after centrifugation at 10,000 rpm.
图6是图5对应的高度对距离的曲线图。FIG. 6 is a graph of height versus distance corresponding to FIG. 5 .
图7是本发明实施例1所制备13000rpm离心后的GO沉淀的原子力显微镜图。Fig. 7 is an atomic force microscope image of GO precipitate prepared in Example 1 of the present invention after centrifugation at 13000 rpm.
图8是图7对应的高度对距离的曲线图。FIG. 8 is a graph of height versus distance corresponding to FIG. 7 .
图9是本发明实施例1所制备13000rpm离心后的GO上清的原子力显微镜图。Fig. 9 is an atomic force microscope image of the GO supernatant after centrifugation at 13000 rpm prepared in Example 1 of the present invention.
图10是图9对应的高度对距离的曲线图。FIG. 10 is a graph of height versus distance corresponding to FIG. 9 .
图11是本发明实施例2所制备的MoS2/GO复合材料以及单独的GO和MoS2的UV-vis光谱图。Fig. 11 is the UV-vis spectrum of the MoS 2 /GO composite material prepared in Example 2 of the present invention and GO and MoS 2 alone.
图12是本发明实施例2所制备的MoS2/GO复合材料以及单独的GO和MoS2体材料的XRD图。Fig. 12 is the XRD pattern of the MoS 2 /GO composite material prepared in Example 2 of the present invention and the separate GO and MoS 2 bulk materials.
图13是本发明实施例2所制备的MoS2/GO复合材料以及MoS2体材料的Raman光谱图。Fig. 13 is a Raman spectrum of the MoS 2 /GO composite material and the MoS 2 bulk material prepared in Example 2 of the present invention.
图14是本发明实施例2所制备的MoS2/GO复合材料以及单独的GO和MoS2在不同pH条件下的zeta电位。Fig. 14 shows the zeta potentials of the MoS 2 /GO composite material prepared in Example 2 of the present invention and GO and MoS 2 alone under different pH conditions.
图15是本发明实施例2所制备的氧化石墨烯片层比较大时MoS2/GO的TEM(a)和高分辨射电镜(HRTEM,b)图。Fig. 15 is the TEM (a) and high-resolution radio microscope (HRTEM, b) images of MoS 2 /GO when the graphene oxide sheet prepared in Example 2 of the present invention is relatively large.
图16是本发明实施例2所制备的氧化石墨烯片层比较适中时形成尺寸相当MoS2/GO的TEM(a)和HRTEM(b)图。Fig. 16 is the TEM (a) and HRTEM (b) images of MoS 2 /GO with the same size when the graphene oxide sheets prepared in Example 2 of the present invention are relatively moderate.
图17是本发明实施例2所制备的氧化石墨烯片层比较适中时形成尺寸相当GO/MoS2/GO三明治结构的TEM(a)和HRTEM(b)图。Fig. 17 is the TEM (a) and HRTEM (b) images of the GO/MoS 2 /GO sandwich structure with a comparable size when the graphene oxide sheets prepared in Example 2 of the present invention are relatively moderate.
图18是本发明实施例2所制备的氧化石墨烯片层比较小时MoS2/GO的TEM(a)和HRTEM(b)图。Fig. 18 is the TEM (a) and HRTEM (b) images of MoS 2 /GO with relatively small graphene oxide sheets prepared in Example 2 of the present invention.
图19是本发明实施例2所制备的不同尺寸的MoS2/GO以及单独的GO和MoS2体材料的UV-vis光谱图。Fig. 19 is the UV-vis spectrum of MoS 2 /GO of different sizes and separate GO and MoS 2 bulk materials prepared in Example 2 of the present invention.
图20是本发明实施例2所制备的不同尺寸的MoS2/GO的DLS图。Fig. 20 is a DLS diagram of MoS 2 /GO with different sizes prepared in Example 2 of the present invention.
图21是本发明实施例2所制备的2000rpm离心后的MoS2/GO沉淀的SEM,TEM图。Fig. 21 is the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 2000 rpm prepared in Example 2 of the present invention.
图22是本发明实施例2所制备的2000rpm离心后的MoS2/GO沉淀的AFM图。Fig. 22 is an AFM image of the MoS 2 /GO precipitate after centrifugation at 2000 rpm prepared in Example 2 of the present invention.
图23是图22对应的高度对距离的曲线图。FIG. 23 is a graph of height versus distance corresponding to FIG. 22 .
图24是本发明实施例2所制备的6000rpm离心后的MoS2/GO沉淀的SEM,TEM图。Fig. 24 is the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 6000 rpm prepared in Example 2 of the present invention.
图25是本发明实施例2所制备的6000rpm离心后的MoS2/GO沉淀的AFM图。Fig. 25 is an AFM image of the MoS 2 /GO precipitate after centrifugation at 6000 rpm prepared in Example 2 of the present invention.
图26是图25对应的高度对距离的曲线图。FIG. 26 is a graph of height versus distance corresponding to FIG. 25 .
图27是本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的SEM,TEM图。Fig. 27 is the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention.
图28是本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的AFM图。Fig. 28 is an AFM image of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention.
图29是图28对应的高度对距离的曲线图。FIG. 29 is a graph of height versus distance corresponding to FIG. 28 .
图30是本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的SEM,TEM图。Fig. 30 is the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention.
图31是本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的AFM图,进一步证实在成功制备了100~200nm的MoS2/GO。Fig. 31 is an AFM image of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention, further confirming that the MoS 2 /GO of 100-200 nm was successfully prepared.
图32是图31对应的高度对距离的曲线图。FIG. 32 is a graph of height versus distance corresponding to FIG. 31 .
图33是本发明实施例3所制备的Bi2Se3/GO的TEM(a)和HRTEM(b)图。Fig. 33 is the TEM (a) and HRTEM (b) images of Bi 2 Se 3 /GO prepared in Example 3 of the present invention.
图34是本发明实施例3所制备的Bi2Se3/GO的AFM图。Fig. 34 is an AFM image of Bi 2 Se 3 /GO prepared in Example 3 of the present invention.
图35是图34对应的高度对距离的曲线图。FIG. 35 is a graph of height versus distance corresponding to FIG. 34 .
图36是本发明实施例3所制备的MoSe2/GO的TEM(a)和HRTEM(b)图。Fig. 36 is the TEM (a) and HRTEM (b) images of MoSe 2 /GO prepared in Example 3 of the present invention.
图37是本发明实施例3所制备的MoSe2/GO的AFM图。Fig. 37 is an AFM image of MoSe 2 /GO prepared in Example 3 of the present invention.
图38是图37对应的高度对距离的曲线图。FIG. 38 is a graph of height versus distance corresponding to FIG. 37 .
图39是本发明实施例3所制备的WS2/GO的TEM(a)和HRTEM(b)图。Fig. 39 is the TEM (a) and HRTEM (b) images of WS 2 /GO prepared in Example 3 of the present invention.
图40是本发明实施例3所制备的WS2/GO的AFM图。Fig. 40 is an AFM image of WS 2 /GO prepared in Example 3 of the present invention.
图41是图40对应的高度对距离的曲线图。FIG. 41 is a graph of height versus distance corresponding to FIG. 40 .
具体实施方式Detailed ways
下面通过实施例结合附图对本发明作进一步说明。The present invention will be further described below by means of embodiments in conjunction with the accompanying drawings.
实施例1 氧化石墨烯(GO)的制备Embodiment 1 The preparation of graphene oxide (GO)
准确称取2g天然石墨粉和1g硝酸钠加入圆底烧瓶,在冰浴的条件下与46mL浓硫酸混合均匀;再将6g高锰酸钾逐次缓慢地加入到上述混合液,保持混合液温度低于20℃搅拌反应2h,然后将混合液转移至35℃的油浴中继续反应30min,此时反应体系为棕褐色粘稠状液体;然后向混合液中逐次缓慢地加入92mL去离子水,并将温度升至95℃继续反应3h,混合液由棕褐色变成亮黄色,最后加入400mL纯水终止反应,同时加入6mL质量分数为30%的H2O2溶液中和未反应的高锰酸钾。待上述溶液冷却至室温后进行抽滤,依次用100mL盐酸水溶液(1∶10)和大量纯水反复洗涤滤饼,除去残留的金属离子和盐酸。再将滤饼重新分散在纯水中,超声5h使其分散,然后以2000rpm低速离心20min分别收集沉淀和上清,2000rpm离心得到的沉淀为大尺寸的GO,上清再以6000rpm离心20min,分别收集沉淀和上清;按照这个方法再分别在10000rpm和13000rpm离心,分别收集沉淀和上清。Accurately weigh 2g of natural graphite powder and 1g of sodium nitrate into a round-bottomed flask, and mix evenly with 46mL of concentrated sulfuric acid in an ice bath; then slowly add 6g of potassium permanganate to the mixture to keep the mixture at a low temperature Stir the reaction at 20°C for 2h, then transfer the mixed solution to an oil bath at 35°C and continue to react for 30min. At this time, the reaction system is a tan viscous liquid; then slowly add 92mL deionized water to the mixed solution one by one, and Raise the temperature to 95°C and continue the reaction for 3 hours. The mixed solution turns from brown to bright yellow. Finally, add 400 mL of pure water to terminate the reaction. At the same time, add 6 mL of H 2 O 2 solution with a mass fraction of 30% to neutralize unreacted permanganate potassium. After the above solution was cooled to room temperature, suction filtration was performed, and the filter cake was repeatedly washed with 100 mL aqueous hydrochloric acid (1:10) and a large amount of pure water to remove residual metal ions and hydrochloric acid. Then the filter cake was redispersed in pure water, ultrasonicated for 5h to disperse, and then centrifuged at 2000rpm at low speed for 20min to collect the precipitate and supernatant respectively. Collect the precipitate and supernatant; centrifuge at 10000rpm and 13000rpm respectively according to this method, and collect the precipitate and supernatant respectively.
本发明实施例1采用2000rpm离心的GO沉淀的原子力显微镜图参见图1。原子力显微镜图说明成功制备了尺寸1~2μm的GO纳米片。图2给出图1对应的高度对距离的曲线图。说明制备的GO纳米片厚度在1nm左右。图3给出本发明实施例1所制备6000rpm离心后的GO沉淀的原子力显微镜图。原子力显微镜图说明成功制备了尺寸700~900nm的GO纳米片。图4给出图3对应的高度对距离的曲线图。说明制备的GO纳米片厚度在1nm左右。图5给出本发明实施例1所制备10000rpm离心后的GO沉淀的原子力显微镜图。原子力显微镜图说明成功制备了尺寸300~600nm的GO纳米片。图6给出图5对应的高度对距离的曲线图。说明制备的GO纳米片厚度在1nm左右。图7给出本发明实施例1所制备13000rpm离心后的GO沉淀的原子力显微镜图。原子力显微镜图说明成功制备了尺寸200~300nm的GO纳米片。图8给出图7对应的高度对距离的曲线图。说明制备的GO纳米片厚度在1nm左右。图9给出本发明实施例1所制备13000rpm离心后的GO上清的原子力显微镜图。原子力显微镜图说明成功制备了尺寸100~200nm的GO纳米片。图10给出图9对应的高度对距离的曲线图。说明制备的GO纳米片厚度在1nm左右。Refer to FIG. 1 for the atomic force microscope image of GO precipitated by centrifugation at 2000 rpm in Example 1 of the present invention. The atomic force microscopy images show that GO nanosheets with a size of 1-2 μm were successfully prepared. FIG. 2 gives a graph of height versus distance corresponding to FIG. 1 . It shows that the thickness of the prepared GO nanosheets is about 1nm. Fig. 3 shows the atomic force microscope image of the GO precipitate after centrifugation at 6000 rpm prepared in Example 1 of the present invention. The atomic force microscopy images show that GO nanosheets with a size of 700-900 nm were successfully prepared. FIG. 4 gives a graph of height versus distance corresponding to FIG. 3 . It shows that the thickness of the prepared GO nanosheets is about 1nm. Fig. 5 shows the atomic force microscope image of GO precipitate prepared in Example 1 of the present invention after centrifugation at 10,000 rpm. The atomic force microscopy images indicate that GO nanosheets with a size of 300-600 nm were successfully prepared. FIG. 6 gives a graph of height versus distance corresponding to FIG. 5 . It shows that the thickness of the prepared GO nanosheets is about 1nm. Fig. 7 shows an atomic force microscope image of GO precipitate prepared in Example 1 of the present invention after centrifugation at 13000 rpm. The atomic force microscopy images show that GO nanosheets with a size of 200-300 nm were successfully prepared. FIG. 8 gives a graph of height versus distance corresponding to FIG. 7 . It shows that the thickness of the prepared GO nanosheets is about 1nm. Fig. 9 shows the atomic force microscope image of the GO supernatant after centrifugation at 13000 rpm prepared in Example 1 of the present invention. The atomic force microscopy images show that GO nanosheets with a size of 100-200 nm were successfully prepared. FIG. 10 gives a graph of height versus distance corresponding to FIG. 9 . It shows that the thickness of the prepared GO nanosheets is about 1nm.
实施例2 MoS2/GO复合材料的制备Preparation of Example 2 MoS 2 /GO Composite Material
准确称取500mg和325目细度的MoS2体材料粉末加入到500mL浓度为0.25mg/mL的GO溶液中,调节混合溶液的pH至7,然后将该混合体系在电功率为250W的超声仪中超声40h。将所得分散液静置48h,获取上层分散液三分之二部分。一部分放到离心机中2000rpm低速离心20min,收集离心所得的上层液部分。再将所得的上层液放到离心机中12000rpm高速离心20min,去掉上清部分。将所得的下层物质用去离子水在高速离心机中12000rpm反复离心20min清洗几次,将最终收集的物质分散在纯水中得到MoS2/GO。另一部分为了制备不同尺寸的复合材料,以2000rpm低速离心20min分别收集沉淀和上清,2000rpm离心得到的沉淀为大尺寸的GO,上清再以6000rpm离心20min,分别收集沉淀和上清;按照这个方法再分别在10000rpm和13000rpm离心,分别收集沉淀和上清。Accurately weigh 500mg and 325 mesh fineness of MoS 2 body material powder and add it to 500mL GO solution with a concentration of 0.25mg/mL, adjust the pH of the mixed solution to 7, and then put the mixed system in an ultrasonic instrument with an electric power of 250W Ultrasound 40h. The resulting dispersion was allowed to stand for 48 hours, and two-thirds of the upper dispersion was obtained. Part of it was placed in a centrifuge and centrifuged at a low speed of 2000rpm for 20min, and the supernatant obtained by centrifugation was collected. Then the obtained supernatant was placed in a centrifuge and centrifuged at a high speed of 12000rpm for 20min, and the supernatant was removed. The resulting lower layer was washed with deionized water in a high-speed centrifuge at 12,000 rpm for 20 minutes repeatedly, and the finally collected material was dispersed in pure water to obtain MoS 2 /GO. In another part, in order to prepare composite materials of different sizes, the precipitate and supernatant were collected by centrifugation at 2000rpm at a low speed for 20min. The precipitate obtained by centrifugation at 2000rpm was large-sized GO, and the supernatant was centrifuged at 6000rpm for 20min to collect the precipitate and supernatant respectively; Methods Centrifuge at 10000rpm and 13000rpm respectively, and collect the precipitate and supernatant respectively.
图11给出本发明实施例2所制备的MoS2/GO复合材料以及单独的GO和MoS2的UV-vis光谱图,从图中可以看出,与单独的MoS2和GO,MoS2/GO同时出现了两者的特征峰,GO特征峰在224nm,MoS2的特征峰出现在和612nm和672nm,初步证明成功制备了MoS2/GO。图12给出本发明实施例2所制备的MoS2/GO复合材料以及单独的GO和MoS2体材料的XRD图。XRD图显示与MoS2体材料相比,MoS2/GO的XRD很多峰都消失,但是在(002)晶面的峰增强,表明MoS2体材料被成功剥离。图13给出本发明实施例2所制备的MoS2/GO复合材料以及MoS2体材料的Raman光谱图。XRD图显示与MoS2体材料相比,MoS2/GO复合材料的E1 2g发生蓝移,表明所制备的MoS2/GO复合材料中少层MoS2的层数为1-3层。图14给出本发明实施例2所制备的MoS2/GO复合材料以及单独的GO和MoS2在不同pH条件下的zeta电位。由图可知,所制备的MoS2/GO溶液在pH为3到9相比单独的GO和MoS2具有优异的稳定性。图15给出本发明实施例2所制备的氧化石墨烯片层比较大时MoS2/GO的TEM(a)和高分辨射电镜(HRTEM,b)图。由图可知,褶皱的大片是GO,GO比较大时,主要形成较小的二硫化钼片吸附在GO表面的结构。b图0.27nm的晶面间距归结于MoS2的(100)晶面,进一步确认了吸附在褶皱的石墨烯表面的片层是MoS2。图16给出本发明实施例2所制备的氧化石墨烯片层比较适中时形成尺寸相当MoS2/GO的TEM(a)和HRTEM(b)图。由图可知,GO比较适中时,形成尺寸相当的MoS2片吸附在GO表面的结构。b图0.62nm的晶面间距归结于MoS2的(002)晶面,进一步确认了吸附在褶皱的石墨烯表面的片层是MoS2。图17给出本发明实施例2所制备的氧化石墨烯片层比较适中时形成尺寸相当GO/MoS2/GO三明治结构的TEM(a)和HRTEM(b)图。由图可知,GO比较适中时,也可以形成的GO/MoS2/GO三明治结构。b图0.62nm和0.27nm的晶面间距分别归结于MoS2的(002)和(100)晶面,GO没有明显的晶面间距,进一步确认形成的是GO/MoS2/GO三明治结构。图18给出本发明实施例2所制备的氧化石墨烯片层比较小时MoS2/GO的TEM(a)和HRTEM(b)图。由图可知,GO比较小时,主要形成较小的GO吸附在MoS2表面的结构。由于小的GO过量覆盖住了MoS2,所以看不到MoS2的晶格条纹。图19给出本发明实施例2所制备的不同尺寸的MoS2/GO以及单独的GO和MoS2体材料的UV-vis光谱图,从图中可以看出随着离心速度从2000rpm增加到13000rpm,MoS2/GO在672nm出少层MoS2的特征峰发生蓝移,表明成功制备了不同尺寸和厚度的MoS2/GO。图20给出本发明实施例2所制备的不同尺寸的MoS2/GO的DLS图。DLS进一步证实在溶液中成功制备了不同尺寸的MoS2/GO。图21给出本发明实施例2所制备的2000rpm离心后的MoS2/GO沉淀的SEM,TEM图。SEM和TEM图证实成功制备了700nm~1μm的MoS2/GO。图22给出本发明实施例2所制备的2000rpm离心后的MoS2/GO沉淀的AFM图,进一步证实在成功制备了700nm~1μm的MoS2/GO。图23给出图22对应的高度对距离的曲线图。说明2000rpm离心后制备的MoS2/GO厚度在30~50nm。图24给出本发明实施例2所制备的6000rpm离心后的MoS2/GO沉淀的SEM,TEM图。SEM和TEM图证实成功制备了300~600nm的MoS2/GO。图25给出本发明实施例2所制备的6000rpm离心后的MoS2/GO沉淀的AFM图,进一步证实在成功制备了400~600nm的MoS2/GO。图26给出图25对应的高度对距离的曲线图。说明6000rpm离心后制备的MoS2/GO厚度在10~20nm。图27给出本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的SEM,TEM图。SEM和TEM图证实成功制备了200~400nm的MoS2/GO。图28给出本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的AFM图,进一步证实在成功制备了200~400nm的MoS2/GO。图29给出图28对应的高度对距离的曲线图。说明10000rpm离心后制备的MoS2/GO厚度在4~8nm。图30给出本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的SEM,TEM图。SEM和TEM图证实成功制备了100~200nm的MoS2/GO。图31给出本发明实施例2所制备的10000rpm离心后的MoS2/GO沉淀的AFM图,进一步证实在成功制备了100~200nm的MoS2/GO。图32给出图31对应的高度对距离的曲线图。说明10000rpm离心后制备的MoS2/GO厚度在1~4nm。Figure 11 shows the UV-vis spectra of the MoS 2 /GO composite material prepared in Example 2 of the present invention and separate GO and MoS 2 , as can be seen from the figure, compared with separate MoS 2 and GO, MoS 2 / Both characteristic peaks of GO appeared at the same time, the characteristic peaks of GO appeared at 224nm, and the characteristic peaks of MoS 2 appeared at 612nm and 672nm, which preliminarily proved that MoS 2 /GO was successfully prepared. Fig. 12 shows the XRD patterns of the MoS 2 /GO composite material prepared in Example 2 of the present invention and the separate GO and MoS 2 bulk materials. The XRD pattern shows that compared with the MoS 2 bulk material, many XRD peaks of MoS 2 /GO disappear, but the peaks in the (002) crystal plane are enhanced, indicating that the MoS 2 bulk material has been successfully exfoliated. Fig. 13 shows the Raman spectra of the MoS 2 /GO composite material and the MoS 2 bulk material prepared in Example 2 of the present invention. The XRD pattern shows that the E 1 2g of the MoS 2 /GO composite is blue-shifted compared with the MoS 2 bulk material, indicating that the number of few-layer MoS 2 in the prepared MoS 2 /GO composite is 1-3 layers. Fig. 14 shows the zeta potentials of the MoS 2 /GO composite material prepared in Example 2 of the present invention and GO and MoS 2 alone under different pH conditions. It can be seen from the figure that the as-prepared MoS 2 /GO solution has excellent stability at pH 3 to 9 compared with GO and MoS 2 alone. Fig. 15 shows the TEM (a) and high-resolution radio microscope (HRTEM, b) images of MoS 2 /GO when the graphene oxide sheet prepared in Example 2 of the present invention is relatively large. It can be seen from the figure that the large wrinkled sheets are GO, and when the GO is relatively large, it mainly forms a structure in which smaller molybdenum disulfide sheets are adsorbed on the surface of GO. The interplanar spacing of 0.27nm in Figure b is attributed to the (100) crystal plane of MoS 2 , further confirming that the sheets adsorbed on the wrinkled graphene surface are MoS 2 . Fig. 16 shows the TEM (a) and HRTEM (b) images of MoS 2 /GO with a size comparable to that of MoS 2 /GO when the graphene oxide sheets prepared in Example 2 of the present invention are relatively moderate. It can be seen from the figure that when GO is relatively moderate, a structure in which MoS 2 sheets of comparable size are adsorbed on the surface of GO is formed. The interplanar spacing of 0.62nm in Figure b is attributed to the (002) crystal plane of MoS 2 , further confirming that the sheets adsorbed on the wrinkled graphene surface are MoS 2 . Fig. 17 shows the TEM (a) and HRTEM (b) images of the GO/MoS 2 /GO sandwich structure of comparable size when the graphene oxide sheets prepared in Example 2 of the present invention are relatively moderate. It can be seen from the figure that when GO is relatively moderate, a GO/MoS 2 /GO sandwich structure can also be formed. The interplanar spacings of 0.62nm and 0.27nm in Figure b are attributed to the (002) and (100) crystal planes of MoS 2 respectively. GO has no obvious interplanar spacing, which further confirms the formation of a GO/MoS 2 /GO sandwich structure. Fig. 18 shows the TEM (a) and HRTEM (b) images of MoS 2 /GO with relatively small graphene oxide sheets prepared in Example 2 of the present invention. It can be seen from the figure that when GO is relatively small, it mainly forms a structure in which smaller GO is adsorbed on the surface of MoS 2 . The lattice fringes of MoS 2 cannot be seen because the small GO covers MoS 2 in excess. Figure 19 shows the UV-vis spectra of MoS 2 /GO of different sizes and separate GO and MoS 2 bulk materials prepared in Example 2 of the present invention. It can be seen from the figure that as the centrifugal speed increases from 2000rpm to 13000rpm , MoS 2 /GO blue-shifted the characteristic peak of few-layer MoS 2 at 672nm, indicating that MoS 2 /GO with different sizes and thicknesses was successfully prepared. Fig. 20 shows the DLS diagrams of MoS 2 /GO with different sizes prepared in Example 2 of the present invention. DLS further confirmed the successful preparation of MoS 2 /GO with different sizes in solution. Fig. 21 shows the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 2000 rpm prepared in Example 2 of the present invention. SEM and TEM images confirmed the successful preparation of MoS 2 /GO with a thickness of 700nm-1μm. Fig. 22 shows the AFM image of the MoS 2 /GO precipitate after centrifugation at 2000 rpm prepared in Example 2 of the present invention, further confirming that MoS 2 /GO with a thickness of 700nm-1μm was successfully prepared. FIG. 23 presents a plot of height versus distance corresponding to FIG. 22 . It shows that the thickness of MoS 2 /GO prepared after centrifugation at 2000rpm is 30-50nm. Fig. 24 shows the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 6000 rpm prepared in Example 2 of the present invention. SEM and TEM images confirmed the successful preparation of 300-600nm MoS 2 /GO. Fig. 25 shows the AFM image of the MoS 2 /GO precipitate after centrifugation at 6000 rpm prepared in Example 2 of the present invention, further confirming that MoS 2 /GO of 400-600 nm was successfully prepared. FIG. 26 gives a graph of height versus distance corresponding to FIG. 25 . It shows that the thickness of MoS 2 /GO prepared after centrifugation at 6000rpm is 10-20nm. Fig. 27 shows the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention. SEM and TEM images confirmed the successful preparation of 200-400nm MoS 2 /GO. Fig. 28 shows the AFM image of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention, further confirming that the MoS 2 /GO of 200-400 nm was successfully prepared. FIG. 29 gives a graph of height versus distance corresponding to FIG. 28 . It shows that the thickness of MoS 2 /GO prepared after centrifugation at 10000rpm is 4-8nm. Fig. 30 shows the SEM and TEM images of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention. SEM and TEM images confirmed the successful preparation of 100-200nm MoS 2 /GO. Fig. 31 shows the AFM image of the MoS 2 /GO precipitate after centrifugation at 10,000 rpm prepared in Example 2 of the present invention, further confirming that MoS 2 /GO of 100-200 nm was successfully prepared. FIG. 32 gives a graph of height versus distance corresponding to FIG. 31 . It shows that the thickness of MoS 2 /GO prepared after centrifugation at 10000rpm is 1-4nm.
实施例3 WS2/GO、Bi2Se3/GO、MoSe2/GO复合材料的制备Example 3 Preparation of WS 2 /GO, Bi 2 Se 3 /GO, MoSe 2 /GO composite materials
准确分别称取500mg和325目细度的二硫化钨(WS2)、硒化铋(Bi2Se3)、硒化钼(MoSe2)体材料粉末分别加入到500mL浓度为0.25mg/mL的GO溶液中,调节混合溶液的pH至7,然后将该混合体系在电功率为250W的超声仪中超声40h。将所得分散液静置48h,获取上层分散液。放到离心机中2000rpm低速离心20min,收集离心所得的上层液部分。再将所得的上层液放到离心机中12000rpm高速离心20min,去掉上清部分。将所得的下层物质用去离子水在高速离心机中12000rpm反复离心20min清洗几次,将最终收集的物质分散在纯水中得到基于GO少层二硫化钨(WS2/GO)、硒化铋(Bi2Se3/GO)、硒化钼(MoSe2/GO)等二维复合材料。Accurately weigh tungsten disulfide (WS 2 ), bismuth selenide (Bi 2 Se 3 ), and molybdenum selenide (MoSe 2 ) bulk material powders with a fineness of 500 mg and 325 mesh, respectively, and add them to 500 mL of 0.25 mg/mL In the GO solution, the pH of the mixed solution was adjusted to 7, and then the mixed system was sonicated for 40 h in an ultrasonic instrument with an electric power of 250 W. The resulting dispersion was left to stand for 48 hours to obtain the upper dispersion. Put it in a centrifuge and centrifuge at a low speed of 2000rpm for 20min, and collect the supernatant obtained by centrifugation. Then the obtained supernatant was placed in a centrifuge and centrifuged at a high speed of 12000rpm for 20min, and the supernatant was removed. The obtained lower layer substance was washed several times by repeated centrifugation at 12000rpm in a high-speed centrifuge for 20min with deionized water, and the finally collected substance was dispersed in pure water to obtain a GO-based few-layer tungsten disulfide (WS 2 /GO), bismuth selenide (Bi 2 Se 3 /GO), molybdenum selenide (MoSe 2 /GO) and other two-dimensional composite materials.
图33给出本发明实施例3所制备的Bi2Se3/GO的TEM(a)和HRTEM(b)图。由a图可知,制备的Bi2Se3/GO片层尺寸在200~600nm。由b图可知,0.21nm的晶面间距归结于Bi2Se3的(110)晶面。图34给出本发明实施例3所制备的Bi2Se3/GO的AFM图。可明显看到吸附在衬度低的GO表面的少层Bi2Se3,尺寸约为200~600nm。图35给出图34对应的高度对距离的曲线图。说明所制备的Bi2Se3/GO中Bi2Se3约为2~4层。图36给出本发明实施例3所制备的MoSe2/GO的TEM(a)和HRTEM(b)图。由a图可知,制备的MoSe2/GO片层尺寸在200~400nm。由b图可知,0.28nm的晶面间距归结于Bi2Se3的(10-10)晶面。图37给出本发明实施例3所制备的MoSe2/GO的AFM图。可明显看到吸附在衬度低的GO表面的少层Bi2Se3,尺寸约为200~400nm。图38给出图37对应的高度对距离的曲线图。说明所制备的MoSe2/GO中MoSe2为1~2层。图39给出本发明实施例3所制备的WS2/GO的TEM(a)和HRTEM(b)图。由a图可知,制备的WS2/GO片层尺寸在100~300nm。由b图可知,0.27nm的晶面间距归结于WS2的(100)晶面。图40给出本发明实施例3所制备的WS2/GO的AFM图。可明显看到吸附在衬度低的GO表面的少层WS2,尺寸约为100~300nm。图41给出图40对应的高度对距离的曲线图。说明所制备的WS2/GO中WS2为1~2层。Fig. 33 shows the TEM (a) and HRTEM (b) images of Bi 2 Se 3 /GO prepared in Example 3 of the present invention. It can be seen from figure a that the prepared Bi 2 Se 3 /GO sheet size is 200-600 nm. It can be seen from Figure b that the interplanar spacing of 0.21 nm is attributed to the (110) crystal plane of Bi 2 Se 3 . Fig. 34 shows the AFM image of Bi 2 Se 3 /GO prepared in Example 3 of the present invention. It can be clearly seen that there are few layers of Bi 2 Se 3 adsorbed on the surface of GO with low contrast, and the size is about 200-600nm. FIG. 35 gives a plot of height versus distance corresponding to FIG. 34 . It shows that there are about 2-4 layers of Bi 2 Se 3 in the prepared Bi 2 Se 3 /GO. Fig. 36 shows the TEM (a) and HRTEM (b) images of MoSe 2 /GO prepared in Example 3 of the present invention. It can be seen from Figure a that the prepared MoSe 2 /GO sheet size is 200-400nm. It can be seen from Figure b that the interplanar spacing of 0.28nm is due to the (10-10) crystal plane of Bi 2 Se 3 . Fig. 37 shows the AFM image of MoSe 2 /GO prepared in Example 3 of the present invention. It can be clearly seen that there are few layers of Bi 2 Se 3 adsorbed on the surface of GO with low contrast, and the size is about 200-400nm. FIG. 38 gives a graph of height versus distance corresponding to FIG. 37 . It shows that the prepared MoSe 2 /GO has 1-2 layers of MoSe 2 . Fig. 39 shows the TEM (a) and HRTEM (b) images of WS 2 /GO prepared in Example 3 of the present invention. It can be seen from figure a that the size of the prepared WS 2 /GO sheet is 100-300nm. It can be seen from Figure b that the interplanar spacing of 0.27nm is attributed to the (100) crystal plane of WS 2 . Fig. 40 shows the AFM image of WS 2 /GO prepared in Example 3 of the present invention. It can be clearly seen that few layers of WS 2 adsorbed on the surface of GO with low contrast, the size is about 100-300nm. FIG. 41 gives a plot of height versus distance corresponding to FIG. 40 . It shows that WS 2 in the prepared WS 2 /GO has 1-2 layers.
实施例4、不同尺寸GO及其二维复合材料的检测Example 4, Detection of GO with different sizes and its two-dimensional composite material
对实施例1中的不同尺寸的GO进行原子力显微镜(AFM)的检测。对实施例2和3中的MoS2/GO复合材料进行紫外可见(UV-vis)光谱,扫描电镜(SEM),透射电镜(TEM),AFM,X-射线衍射(XRD),拉曼(Raman)光谱,动态光散射(DLS),Zeta电位测量。对于WS2/GO、Bi2Se3/GO和MoSe2/GO等二维复合材料进行TEM,AFM等表征。GO of different sizes in Example 1 was detected by atomic force microscope (AFM). Carry out ultraviolet-visible (UV-vis) spectrum to MoS in embodiment 2 and 3/GO composite material, scanning electron microscope (SEM), transmission electron microscope (TEM), AFM, X-ray diffraction (XRD), Raman (Raman ) spectroscopy, dynamic light scattering (DLS), zeta potential measurements. Conduct TEM, AFM and other characterizations for WS 2 /GO, Bi 2 Se 3 /GO and MoSe 2 /GO and other two-dimensional composite materials.
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