CN105006735A - Double-crystal multi-pass type femtosecond laser amplification system - Google Patents

Double-crystal multi-pass type femtosecond laser amplification system Download PDF

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Publication number
CN105006735A
CN105006735A CN201510514165.5A CN201510514165A CN105006735A CN 105006735 A CN105006735 A CN 105006735A CN 201510514165 A CN201510514165 A CN 201510514165A CN 105006735 A CN105006735 A CN 105006735A
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CN
China
Prior art keywords
pumping device
convex lens
crystal
semiconductor laser
gain
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CN201510514165.5A
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Chinese (zh)
Inventor
刘博文
宋寰宇
池涵
柴路
胡明列
王清月
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Tianjin University
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Tianjin University
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Priority to CN201510514165.5A priority Critical patent/CN105006735A/en
Publication of CN105006735A publication Critical patent/CN105006735A/en
Pending legal-status Critical Current

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Abstract

The present invention discloses a double-crystal multi-pass type femtosecond laser amplification system which comprises a bi-directional pumping device, a double-crystal amplification gain medium formed by first and second crystal gain mediums of different substrates, and a multi-pass signal amplification cavity formed by first and second plane reflection mirrors of a dichroic mirror. A forward pumping source device convex lens and a reverse pumping source device convex lens are arranged between a forward pumping device semiconductor laser pump source and a reverse pumping device semiconductor laser pump. The distance between the convex lens and a pumping device is the focal length of the respective convex lens. Two crystal gain mediums are as close as possible in the condition of no contact damage, and the crystal centers of the two crystals are at the centers of the respective pumping light. The first and second plane reflection mirrors are respectively arranged between the crystal gain mediums and the pumping device convex lenses. According to the system, the width of a gain spectrum can be expanded appropriately, the gain narrowing effect to light spectrum by the gain spectrum is reduced, and thus the output of a narrow pulse and high energy is obtained.

Description

Bicrystal multi-way Femtosecond Laser Amplification System
Technical field
The present invention relates to a kind of multi-way femtosecond laser amplifier based on doped crystal.
Background technology
Femtosecond laser amplifier is the key promoting femtosecond laser power and energy.Conventional amplifier schema has two kinds, and one is fiber amplifier, another kind of bulk crystals amplifier.The waveguiding structure that fiber amplifier is thin and long by feat of optical fiber, has good heat dissipation characteristics, is applicable to realizing high-average power femtosecond laser and amplifies.But waveguiding structure increases its non linear coefficient greatly, make femtosecond laser accumulate too much nonlinear phase shift in the process of amplifying thus cause pulse quality deterioration, limiting amplifier and export pulse energy.For bulk crystals amplifier, when amplifying femto-second laser pulse, because focal beam spot is comparatively large, and shorter in intracrystalline operating distance, what accumulate non-linear is correspondingly far smaller than fiber amplifier, can obtain higher single pulse energy.The femtosecond laser majority that current acquisition single pulse energy is greater than 100 μ J all adopts bulk crystals amplifier.
For femtosecond laser amplifier, the important parameter of another one is exactly the gain spectral of gain media, directly determines the most narrow spaces amplifying afterpulse.According to Fourier transform relation, the time domain width that wider spectrum support is narrower.But in amplification process, the output spectrum after restriction femtosecond laser amplifies by Gain-narrowing effect, the gain coefficient of amplifier is larger, and gain narrowing is more obvious, and the spectrum after amplification is narrower.For the flashlight that spectrum is wider, due to the Gain-narrowing effect under high-gain, output spectral width is often less than incident spectral width, and the transform limit time domain width of amp pulse can be wider than incident pulse.Burst pulse is obtained because which limit bulk crystals amplifier.
Not enough in order to overcome this, expand the gain spectra width of bulk crystals amplifier further, much new wide-range crystal is suggested, but due to new crystal complex manufacturing technology, quality is also relatively poor, the more important thing is, the gain bandwidth of new crystal can not unrestrictedly increase.Therefore, need that research is a kind of solves gain bandwidth and the limited problem of the pulse duration that causes badly, use conventional bulk crystals gain media to obtain high-energy simultaneously, the femtosecond laser of burst pulse amplifies and export.
Summary of the invention
For in prior art, use single Yb crystal of mixing as stage gain medium, gain bandwidth is limited, gain narrowing phenomenon is there is when gain is higher, limit the problem of amplifying afterpulse time domain width, the invention provides a kind of bicrystal multi-way Femtosecond Laser Amplification System, suitably can expand the width of gain spectral, reduce the gain narrowing effect that gain spectral produces spectrum, thus obtain burst pulse, high-octane output.
In order to solve the problems of the technologies described above, a kind of bicrystal multi-way Femtosecond Laser Amplification System that the present invention proposes, comprising: the two directional pump device be made up of forward pumping device semiconductor laser for pumping source, forward pumping device convex lens, backward pumping device semiconductor laser for pumping source and backward pumping device convex lens; The bicrystal gain amplifier medium be made up of first piece of crystal gain medium and second piece of crystal gain medium of different substrates; The multi-way signal enlarged cavity be made up of the first plane mirror and the second plane mirror respectively for dichroic mirror; Wherein: described forward pumping device semiconductor laser for pumping source and backward pumping device semiconductor laser for pumping source are arranged in integrally-built two ends; Described forward pumping device convex lens and backward pumping device convex lens are arranged between described forward pumping device semiconductor laser for pumping source and backward pumping device semiconductor laser for pumping source; Described forward pumping device convex lens and forward pumping device semiconductor laser for pumping source spacing and distance between described backward pumping device convex lens and backward pumping device semiconductor laser for pumping source be the focal length of respective convex lens self respectively; Described first piece of crystal gain medium and second piece of crystal gain medium close as far as possible when not contact failure, and the germ nucleus of described first piece of crystal gain medium and second piece of crystal gain medium lays respectively at the center of respective pump light; Described first plane mirror is arranged between described first piece of crystal gain medium and forward pumping device convex lens, and described second plane mirror is arranged between described second piece of crystal gain medium and backward pumping device convex lens; Spacing between described first plane mirror and described second plane mirror order of reflection as required and incident angle adjust.
Compared with prior art, the invention has the beneficial effects as follows:
Suitably can expand the width of gain spectral, reduce the gain narrowing effect that gain spectral produces spectrum, thus obtain burst pulse, high-octane output.
Accompanying drawing explanation
Fig. 1 is bicrystal multi-way Femtosecond Laser Amplification System structural representation of the present invention.
In figure:
1-forward pumping device semiconductor laser for pumping source 2-forward pumping device convex lens
3-first plane mirror 4-first piece of crystal gain medium
5-second piece of crystal gain medium 6-second plane mirror
7-backward pumping device convex lens 8-backward pumping device semiconductor laser for pumping source
Embodiment
Be described in further detail technical solution of the present invention below in conjunction with the drawings and specific embodiments, described specific embodiment only explains the present invention, not in order to limit the present invention.
As shown in Figure 1, a kind of bicrystal multi-way of the present invention Femtosecond Laser Amplification System, comprises following device:
The two directional pump device be made up of forward pumping device semiconductor laser for pumping source 1, forward pumping device convex lens 2, backward pumping device semiconductor laser for pumping source 8 and backward pumping device convex lens 7;
The bicrystal gain amplifier medium be made up of first piece of crystal gain medium 4 and second piece of crystal gain medium 5 of different substrates;
The multi-way signal enlarged cavity be made up of the first plane mirror 3 and the second plane mirror 6 respectively for dichroic mirror.
Position relationship between above-mentioned each device is:
Described forward pumping device semiconductor laser for pumping source 1 and backward pumping device semiconductor laser for pumping source 8 are arranged in integrally-built two ends;
Described forward pumping device convex lens 2 and backward pumping device convex lens 7 are arranged between described forward pumping device semiconductor laser for pumping source 1 and backward pumping device semiconductor laser for pumping source 8; Described forward pumping device convex lens 2 and forward pumping device semiconductor laser for pumping source 1 spacing and distance between described backward pumping device convex lens 7 and backward pumping device semiconductor laser for pumping source 8 be the focal length of respective convex lens self respectively;
Described first piece of crystal gain medium 4 and second piece of crystal gain medium 5 close as far as possible when not contact failure, and the germ nucleus of described first piece of crystal gain medium 4 and second piece of crystal gain medium 5 lays respectively at the center of respective pump light;
Described first plane mirror 3 is arranged between described first piece of crystal gain medium 4 and forward pumping device convex lens 2, and described second plane mirror 6 is arranged between described second piece of crystal gain medium 5 and backward pumping device convex lens 7; Spacing between described first plane mirror 3 and described second plane mirror 6 order of reflection as required and incident angle adjust, and ensure that incident pulse and outgoing pulse do not stop by dichroic mirror simultaneously.
Bicrystal gain amplifier medium in the present invention is by different substrates, first piece of crystal gain medium 4 and second piece of crystal gain medium 5 of identical doping particle form, two pieces of crystal should have close but inconsistent emission cross section, gain spectral when gain spectral individually works wider than two crystal after two crystal superpositions.Conventional doped crystal has different centre wavelength and bandwidth usually, and bandwidth relative narrower, form multiplexing for two crystal is used in amplifying stage, the complementation of its gain bandwidth can be effectively utilized, thus expansion gain bandwidth, finally realize flashlight and amplify in whole spectral region.Simultaneously, industry personnel can also by calculating and designing, the crystal of different-thickness, different levels of doping, different Doped ions, different base is used to obtain comparatively smooth gain spectral, thus realize more uniform gain curve in crystal amplification, narrow on the impact of flashlight compared with low gain as much as possible.
Two directional pump device in the present invention realizes pumping to two pieces of crystal before and after it from both direction respectively, utilizes the adjustment respectively that this two directional pump device can realize two crystal pumping light intensity, thus realizes the effect optimizing amplifier parameter.Two directional pump device is made up of the identical pump arrangement of two covers, often overlap and comprise pumping source and convex lens respectively, namely form forward pumping device by forward pumping device semiconductor laser for pumping source 1 and forward pumping device convex lens 2, form backward pumping device by backward pumping device semiconductor laser for pumping source 8 and backward pumping device convex lens 7.Pumping source sends disperses pump light, planoconvex lens collimating and correcting, and beaten by light beam uniformly on first piece of crystal, in like manner backward pump light is beaten on second piece of crystal by backward pumping device.Realize amplification efficiency by the relative position optimizing focal length of convex lens parameter and convex lens and pumping source and crystal to maximize.
Multi-way signal enlarged cavity in the present invention is made up of two plane mirrors (first plane mirror 3 and the second plane mirror 6), and these two speculums are dichroic mirror, i.e. reflects laser transmission pump light.Incident pulse is incided in large chamber, multi-way signal side with a less angle (non-zero-degree), and by a bicrystal amplification medium, pulse forms reflection on level crossing, again pass through bicrystal, incident pulse like this is reflected successively and Multiple through then out bicrystal between two speculums, thus realizes the Multiple through then out of incident pulse and the structure of amplification.By the spacing of the incident angle and two level crossings that regulate incident pulse and plane mirror can control impuls at the number of times of intracavity reflecting, thus can the gain system of control amplifier indirectly, optimization amplifying parameters.Use multi-way signal enlarged cavity that flashlight can be made repeatedly progressively to amplify through bicrystal structure, utilize the gain spectral that two kinds of crystal are close but different, monocrystal can be avoided as far as possible to amplify the impact of the gain narrowing brought.
Although invention has been described by reference to the accompanying drawings above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under enlightenment of the present invention; when not departing from present inventive concept, can also make a lot of distortion, these all belong within protection of the present invention.

Claims (2)

1. a bicrystal multi-way Femtosecond Laser Amplification System, is characterized in that, comprising:
The two directional pump device be made up of forward pumping device semiconductor laser for pumping source (1), forward pumping device convex lens (2), backward pumping device semiconductor laser for pumping source (8) and backward pumping device convex lens (7);
The bicrystal gain amplifier medium be made up of first piece of crystal gain medium (4) and second piece of crystal gain medium (5) of different substrates;
The multi-way signal enlarged cavity be made up of the first plane mirror (3) and the second plane mirror (6) respectively for dichroic mirror;
Wherein:
Described forward pumping device semiconductor laser for pumping source (1) and backward pumping device semiconductor laser for pumping source (8) are arranged in integrally-built two ends;
Described forward pumping device convex lens (2) and backward pumping device convex lens (7) are arranged between described forward pumping device semiconductor laser for pumping source (1) and backward pumping device semiconductor laser for pumping source (8); Described forward pumping device convex lens (2) and forward pumping device semiconductor laser for pumping source (1) spacing and distance between described backward pumping device convex lens (7) and backward pumping device semiconductor laser for pumping source (8) be the focal length of respective convex lens self respectively;
Described first piece of crystal gain medium (4) and second piece of crystal gain medium (5) close as far as possible when not contact failure, and the germ nucleus of described first piece of crystal gain medium (4) and second piece of crystal gain medium (5) lays respectively at the center of respective pump light;
Described first plane mirror (3) is arranged between described first piece of crystal gain medium (4) and forward pumping device convex lens (2), and described second plane mirror (6) is arranged between described second piece of crystal gain medium (5) and backward pumping device convex lens (7); Spacing between described first plane mirror (3) and described second plane mirror (6) order of reflection as required and incident angle adjust.
2. bicrystal multi-way Femtosecond Laser Amplification System according to claim 1, it is characterized in that, the position of described first plane mirror (3) is finely tuned to exit end, the position of described second plane mirror (6) is finely tuned slightly toward incidence end, thus ensures that incident pulse and outgoing pulse do not stop by dichroic mirror.
CN201510514165.5A 2015-08-19 2015-08-19 Double-crystal multi-pass type femtosecond laser amplification system Pending CN105006735A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109119875A (en) * 2018-09-21 2019-01-01 深圳市杰普特光电股份有限公司 Bicrystal infrared laser

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CN104577687A (en) * 2015-01-04 2015-04-29 中国科学院上海光学精密机械研究所 All-solid-state laser device of 1030 nm

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070297481A1 (en) * 2006-06-26 2007-12-27 Fujifilm Corporation Laser device and optical amplifier
CN104185933A (en) * 2012-01-13 2014-12-03 新拉塞有限公司 Non-regenerative optical amplifier
CN104319603A (en) * 2014-11-05 2015-01-28 中国工程物理研究院激光聚变研究中心 Strip laser amplifier and laser output method thereof
CN104577687A (en) * 2015-01-04 2015-04-29 中国科学院上海光学精密机械研究所 All-solid-state laser device of 1030 nm

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109119875A (en) * 2018-09-21 2019-01-01 深圳市杰普特光电股份有限公司 Bicrystal infrared laser

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Application publication date: 20151028