CN105006417A - Ion implantation apparatus - Google Patents
Ion implantation apparatus Download PDFInfo
- Publication number
- CN105006417A CN105006417A CN201510419657.6A CN201510419657A CN105006417A CN 105006417 A CN105006417 A CN 105006417A CN 201510419657 A CN201510419657 A CN 201510419657A CN 105006417 A CN105006417 A CN 105006417A
- Authority
- CN
- China
- Prior art keywords
- ion
- electric field
- axis
- implantation apparatus
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 33
- 230000005684 electric field Effects 0.000 claims abstract description 103
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 47
- 230000000694 effects Effects 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 abstract description 138
- 238000010790 dilution Methods 0.000 abstract description 9
- 239000012895 dilution Substances 0.000 abstract description 9
- 238000002513 implantation Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the field of electronic devices, and discloses an ion implantation apparatus. The ion implantation apparatus comprises an ion source used for generating and emitting ion beams and a first electrode device arranged on a path from the ion source to a sample, the first electrode device is used for generating a tapered electric field distributed along the direction of the central axis of the ion source and enabling ions which do not move along the direction of the central axis of the ion source in the ion beams to deflect along the direction vertical to the central axis and not to be implanted into the sample under the effect of the tapered electric field, a second electrode device is arranged at the downstream position of the first electrode device and used for generating an electric field for assisting the ions to deflect, when the electric field is applied, the ions along the direction of the central axis deflect and are not implanted into the sample, and when the electric filed is not applied, the ions along the direction of the central axis penetrate through the second electrode device and are implanted into the sample. According to the ion implantation apparatus, the dilution of the ion beams is performed via the tapered electric field, an ion gate is formed via the transverse electric field, and the implantation of a few ions or even a single ion is realized.
Description
Technical field
The present invention relates to field of electronic devices, particularly, relate to a kind of ion implantation apparatus.
Background technology
Along with the further raising of the integrated level of integrated circuit, the size of microelectronic component narrows down to nano-scale further from micron-scale, even arrives the size of several nanometer.The thing followed is, the correlation technique of making devices and technique also must change, and ion implantation is exactly a kind of key technology wherein.It is well known in the art that, in small device nano-scale, inject the ion of finite number with specific spatial distribution, the reasonable characteristics of device could be formed.And injecting a small amount of ion, even several ion cannot realize by simple Flied emission technology, therefore needs the single ion implantation technique considering at every turn only to inject several or even single ion.But it is still very difficult to realize single ion implantation, how improving single ion implantation technique has also become urgent technical need.
Summary of the invention
The object of this invention is to provide a kind of ion implantation apparatus, for solving the injection problem of a small amount of ion or even single ion.
To achieve these goals, the invention provides a kind of ion implantation apparatus, for by ion implantation sample, comprising:
Ion source, its for generation of and launch ion beam; And first electrode assembly, it is arranged on described ion source on the path of described sample, for generation of the tapered electric field along described ionogenic axis directional spreding, and the ion do not moved along direction, ionogenic axis in described ion beam is made not inject described sample along the direction deflection perpendicular to described axis under the effect of this tapered electric field.
Preferably, described first electrode assembly comprises: be with foraminate electric pole plate, and it is arranged on described ion source on the path of described sample, and near described ion source; Be with foraminate lower electrode plate, it is arranged on described ion source on the path of described sample, and near described sample; And first grid bias power supply, it is for powering to described electric pole plate and described lower electrode plate, to make to form the tapered electric field along described ionogenic axis directional spreding between described electric pole plate and described lower electrode plate; Wherein, described electric pole plate is not identical with described lower electrode plate size, and the center of aperture on described electric pole plate and described lower electrode plate is all on described ionogenic axis, the aperture of ion beam on described electric pole plate that described ion source is launched enters described tapered electric field, and the aperture of ion on lower electrode plate moved along direction, ionogenic axis leaves described tapered electric field.
Preferably, described electric pole plate and described lower electrode plate are plane electrode plate parallel to each other.
Preferably, described electric pole plate and described lower electrode plate are curved surface electrode plate.
Preferably, described electric pole plate and described lower electrode plate are annular electro polar circle.
Preferably, described electric pole plate and described lower electrode plate parallel to each other, and described electric pole plate is plane electrode plate, and described lower electrode plate is the narrow meshed cantilever beam in needle point center.
Preferably, described first electrode assembly comprises: with the first cantilever beam of needle point aperture, and the upper and lower surface of this first cantilever beam is all coated with annular electrode; And first grid bias power supply, it is for powering to the upper and lower surface of the first cantilever beam, to make to form the tapered electric field along direction, described ionogenic axis between the upper and lower surface of the first cantilever beam; Wherein, the center of described needle point aperture is on described ionogenic axis, the ion beam that described ion source is launched enters described tapered electric field through the upper end of needle point aperture, and the ion moved along direction, ionogenic axis leaves described tapered electric field through the lower end of needle point aperture.
Preferably, described ion implantation apparatus also comprises: the second electrode assembly, it is arranged on the downstream of described first electrode assembly, for generation of the electric field of assisting ion deflection, when this electric field is applied in, the ion entering the second electrode assembly along direction, axis deflects and does not inject described sample, and when this electric field is not applied in, the ion entering the second electrode assembly along direction, axis passes the second electrode assembly and is injected into described sample.
Preferably, described second electrode assembly comprises: electrode pair, and it is arranged on the downstream of described first electrode assembly, for generation of the electric field of assisting ion deflection; Second grid bias power supply, it is in powering to described electrode pair, to make the electric field forming the deflection of described assisting ion between described electrode pair; And be with foraminate stop part, it is arranged on the lower end of electric field of described assisting ion deflection, and near described sample, and being centrally located on described ionogenic axis of aperture on this stop part.
Preferably, described second electrode assembly comprises: narrow meshed second cantilever beam of needle point, and aperture on needle point be centrally located on described ionogenic axis; And second grid bias power supply, it is for powering for described second cantilever beam, to make the electric field forming assisting ion deflection up and down between two tops of the needle point of the second cantilever beam.
Pass through technique scheme, the invention has the beneficial effects as follows: the present invention carries out ion beam dilution by tapered electric field, greatly reduce the ion populations by corresponding aperture, add and realize minority ion or even isolated son by the possibility of aperture, meanwhile also collimation has been done to ion beam.In addition, also devise ion gate in the downstream of tapered electric field, utilize the electric field of the assisting ion deflection produced and stop part that one or several ion are passed through, and block passing through of ion afterwards, furthermore achieved that the injection of the even isolated son of a small amount of ion.
Other features and advantages of the present invention are described in detail in embodiment part subsequently.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
Fig. 1 is the exit path schematic diagram of intermediate ion source of the present invention emitting ions bundle;
Fig. 2 is the structural representation of embodiments of the invention one intermediate ion injection device;
Fig. 3 is the structural representation of embodiments of the invention two intermediate ion injection device;
Fig. 4 is the structural representation of embodiments of the invention three intermediate ion injection device;
Fig. 5 is the structural representation of embodiments of the invention four intermediate ion injection device;
Fig. 6 is the vertical view of annular electro polar circle in embodiments of the invention four;
Fig. 7 is the structural representation of embodiments of the invention five intermediate ion injection device;
Fig. 8 is the structural representation of embodiments of the invention six intermediate ion injection device;
Fig. 9 is the vertical view of cantilever beam in embodiments of the invention six;
Figure 10 is the upward view of cantilever beam in embodiments of the invention six;
Figure 11 is the structural representation of embodiments of the invention seven intermediate ion injection device;
Figure 12 is the structural representation of embodiments of the invention eight intermediate ion injection device.
Description of reference numerals
1, ion source, 2, ion beam, 3, axis, 4, sample, the 5, first electrode assembly, 6, tapered electric field, 7, ion deflecting path, 8, sample stage, 9, vacuum cavity, the 10, second electrode assembly;
501, electric pole plate, 502, lower electrode plate, the 503, first grid bias power supply, the 504, first cantilever beam;
5041, needle point root, 5042, needle point aperture, 5043, cantilever beam top annular electrode, 5044, needle point top annular electrode, 5045, contact conductor;
101, electrode pair, the 102, second grid bias power supply, 103, stop part, 104, the second cantilever beam.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
In the present invention, when not doing contrary explanation, the noun of locality used such as " upper and lower, left and right " typically refers to the upper and lower, left and right of respective profile, and " inside and outside " refers to the interior and outer of respective profile, and " far away, near " refers to the far away and near of respective profile.
Generally, the ion number that ion source is launched is huge, is unfavorable for the injection realizing a small amount of ion or even single ion.Therefore, need to consider how from the ion that ion source is launched, to choose very small amount of ion.
General ion beam emittance is not out parallel afterwards, as shown in Figure 1, the ion beam 2 launched from ion source 1 not all along the outgoing of ionogenic axis 3 (axis of the following stated all refers to ionogenic axis), but have certain dispersion angle and diameter.Particularly, the diameter of the ion beam of outgoing can by the size control of ion source outlet, and because the ion beam of outgoing has certain diameter, then the direction of ion beam also necessarily has difference, and namely ion beam exists dispersing to a certain degree.
Accordingly, can consider to make to emit ion beam from ion source and fly into a tapered electric field along direction, axis along the direction of axis, in this tapered electric field, only have the ion moved along axis not to be subject to the effect of the cross stream component of tapered electric field.For not being the ion moved along axis, as the direction of motion departs from the ion of axis certain angle, or depart from the ion at center, axis, by the cross stream component effect by tapered electric field along deflecting perpendicular to axis direction with axis parallel.
Therefore, consider the impact of tapered electric field on ion, The present invention gives following embodiment, to realize the injection of a small amount of ion or even single ion.
Embodiment one
This gives and a kind ofly as shown in Figure 2, to comprise: ion source 1 for by the ion implantation apparatus in ion implantation sample 4, its for generation of and launch ion beam 2; And first electrode assembly 5, it is arranged on described ion source 1 on the path of described sample 4, for generation of the tapered electric field 6 along described ionogenic axis directional spreding, and the ion do not moved along direction, axis 3 in described ion beam 2 is made not inject described sample along the direction deflection perpendicular to axis 3 under the effect of this tapered electric field 6.
In the present embodiment, described first electrode assembly 5 comprises: be with foraminate electric pole plate 501, and it is arranged on described ion source 1 on the path of described sample 4, and near described ion source 1; Be with foraminate lower electrode plate 502, it is arranged on described ion source 1 on the path of described sample 4, and near described sample 4, and first grid bias power supply 503, it is for powering to described electric pole plate 501 and described lower electrode plate 502, to make the tapered electric field 6 formed between described electric pole plate 501 and described lower electrode plate 502 along axis directional spreding.This tapered electric field 6 is preferably the conical distribution electric field of symmetry axis with axis.
Wherein, described electric pole plate 501 is not identical with described lower electrode plate 502 size, and the center of described electric pole plate 501 and the aperture on described lower electrode plate 502 is all on described ionogenic axis 3, the size of aperture can regulate, pass through close to the ion of axis to make exit direction, departing from axis ion far away then cannot by aperture, directly stop by two battery lead plates.The aperture of ion beam 2 on described electric pole plate 501 that described ion source 1 is launched enters described tapered electric field 6, and under the effect of the cross stream component of described tapered electric field 6, the ion do not moved along axis in ion beam is deflected along the direction perpendicular to this axis, the ion moved along axis then leaves tapered electric field 6 by the aperture on described lower electrode plate 502, and can be injected into described sample 4.As shown in Figure 2, the ion deflecting path 7 of the ion do not moved along axis is illustrated.
In the present embodiment, described electric pole plate 501 is plane electrode plate parallel to each other with described lower electrode plate 502, and the size of lower electrode plate 502 is less than upper flat plate electrode 501.
In addition, by the generation and the electric field strength that regulate the first grid bias power supply 503 can regulate tapered electric field, switch as corresponding first grid bias power supply 503 disconnects, and makes cannot produce tapered electric field between two battery lead plates, then the ion beam that ion source is launched does not deflect.In addition, the sample stage 8 possessing high accuracy XY displacement function in the present embodiment, is also provided with, for placing sample 4.
In the present embodiment, whole ion implantation apparatus is in vacuum cavity 9, at utmost to ensure the purity of ion beam, and can reduce the scattering of ion beam and other particles.Meanwhile, because the injection of ion needs higher positioning precision, so under whole vacuum cavity all needs to be in damping environment.
In the present embodiment, after ion beam 2 enters tapered electric field 6 along axis 3, it not the ion moved along axis, as the direction of motion departs from the ion of axis certain angle, or depart from the ion at center, axis with axis parallel, can be accelerated by the cross stream component of tapered electric field or deflection of slowing down, thus more depart from axis, the ion moved along axis 3 then injects described sample 4 by the aperture on this lower electrode plate 502, thus reaches the effect of dilution ion beam.
Embodiment two
Relative to embodiment one, as shown in Figure 3, in the present embodiment, the size of lower electrode plate 502 is larger than upper flat plate electrode 501, and change the sense of current of the first grid bias power supply accordingly, thus the electric field line direction of the tapered electric field formed is contrary with embodiment one, by this tapered electric field, the effect of dilution ion beam also can be reached.
Embodiment three
Relative to embodiment one, as shown in Figure 4, electric pole plate 501 in the present embodiment is the curved surface electrode plate that size is not identical with described lower electrode plate 502, the tapered electric field along direction, described ionogenic axis is formed by these two curved surface electrode plates, and by this tapered electric field, the effect of dilution ion beam also can be reached.
Embodiment four
Relative to embodiment one, as shown in Figure 5, electric pole plate 501 in the present embodiment is the annular electro polar circle that size is not identical with described lower electrode plate 502, the structure of this annular electro polar circle as shown in Figure 6, the tapered electric field along direction, described ionogenic axis is formed by these two annular electrode circles, and by this tapered electric field, the effect of dilution ion beam also can be reached.
Embodiment five
Relative to embodiment one, as shown in Figure 7, electric pole plate 501 in the present embodiment is parallel to each other with described lower electrode plate 502, and described electric pole plate 501 is plane electrode plate, described lower electrode plate 502 is the narrow meshed cantilever beam in needle point center, to make to form the tapered electric field along direction, described ionogenic axis between described electric pole plate and described lower electrode plate, and by this tapered electric field, also can reach the effect of dilution ion beam.
Embodiment six
As shown in Fig. 8 to Figure 10, described in the present embodiment, the first electrode assembly 5 comprises: the first cantilever beam 504 of band needle point aperture 5042, and the upper and lower surface of this first cantilever beam 504 (comprising needle point top) is all coated with annular electrode; And first grid bias power supply 503, it is for powering to the upper and lower surface of the first cantilever beam, to make to form the tapered electric field along direction, described ionogenic axis between the upper and lower surface of the first cantilever beam, between cantilever beam top annular electrode 5043 and needle point top annular electrode 5044, namely form the tapered electric field along described ionogenic axis directional spreding.Wherein, needle point root 5041 illustrates the boundary line between the surface plate of needle point and cantilever beam lower surface, thus easily knows that tapered electric field produces between cantilever beam top annular electrode 5043 and needle point top annular electrode 5044.
Wherein, the center of described needle point aperture 5042 is on described ionogenic axis, the ion beam 2 that described ion source 1 is launched enters described tapered electric field, the ion beam 2 that described ion source is launched enters described tapered electric field 6 through the upper end of needle point aperture 5042, and the ion moved along direction, ionogenic axis 3 leaves described tapered electric field 6 through the lower end of needle point aperture 5042.Under the effect of the cross stream component of this tapered electric field, the ion do not moved along ionogenic axis in ion beam deflects along the direction perpendicular to described ionogenic axis, and the ion moved along ionogenic axis then can be injected into sample by needle point aperture.
As shown in Figures 9 and 10, cantilever beam top annular electrode 5043 and needle point top annular electrode 5044 are provided with contact conductor 5045, the first grid bias power supply 503 can be connected by contact conductor 5045, this first grid bias power supply 503 is that two annular electrodes are powered, by the tapered electric field regulating this grid bias power supply can regulate the formation between two annular electrodes.Wherein, for needle point top annular electrode 5044, it can be selected according to needle point radius of curvature.In addition, in the present embodiment, be also provided with the sample stage 8 possessing high accuracy XY displacement function, for placing sample 4.
In the present embodiment, utilize two annular electrodes of cantilever beam to form tapered electric field, by this tapered electric field, the effect of dilution ion beam can be reached.
Embodiment seven
In any embodiment of embodiment one to embodiment six, along with the electric field strength of tapered electric field increases, will be reduced by the ion beam line of aperture, along with tapered electric field two battery lead plates between distance increase, will be reduced by the ion beam line of aperture.The state reducing within a certain period of time only single ion by can make ion beam to the adjustment of tapered electric field voltage and pass through, realizes the dilution to ion beam.
But after these a small amount of ion beams of formation or even single ion, if there is no corresponding ion gate, one or several ion are passed through, and block passing through of ion afterwards, then when sequential filming ion beam, multiple ion still may be caused to inject sample in different time points, thus a small amount of ion or single ion implantation cannot be realized.
Therefore, on the basis of the arbitrary ion implantation apparatus in above-described embodiment one to embodiment six, as shown in figure 11, the present embodiment, outside the little hole exits in the lower end of tapered electric field, is also provided with the second electrode assembly 10.Described second electrode assembly is arranged on the downstream of described first electrode assembly 5, for generation of the electric field of assisting ion deflection, when this electric field is applied in, the ion entering the second electrode assembly 10 along direction, axis 3 deflects and does not inject described sample 4, and this electric field is not when being applied in, the ion entering the second electrode assembly 10 along direction, axis 3 is through the second electrode assembly 10 and be injected into described sample 4.
In the present embodiment, described second electrode assembly 10 comprises: electrode pair 101, and it is arranged on the downstream of described first electrode assembly, for generation of the electric field of assisting ion deflection; Second grid bias power supply 102, it is for powering to described electrode pair, to make the electric field forming assisting ion deflection between described electrode pair; And be with foraminate stop part 103, it is arranged on the lower end of described transverse electric field, and near described sample 4, and being centrally located on described ionogenic axis 3 of aperture on this stop part.
In the present embodiment, electrode pair 101 preferably adopts the parallel-plate electrode pair arranged along direction, axis, is the transverse electric field perpendicular to direction, axis with the electric field making the assisting ion of generation deflect.And described second grid bias power supply 102 is powered for electrode pair 101, when the power is turned on, the electric field of assisting ion deflection is applied in, otherwise the electric field of assisting ion deflection is not applied in.
Therefore, produced the electric field of assisting ion deflection to 101 by the second grid bias power supply 102 control electrode, the second electrode assembly is made to become an ion gate, when the electric field of assisting ion deflection is not applied in, the ion entering the second electrode assembly along direction, axis does not deflect, and be injected in sample through the aperture on described stop part 103, and the electric field of assisting ion deflection is when being applied in, there is enough deflection in the ion entering the second electrode assembly along direction, axis, stopped by described stop part 103, thus cannot sample be injected.Therefore, by the second electrode assembly, the first electrode assembly is coordinated, can realize making one or several ion to pass through, and block passing through of ion afterwards.
In the present embodiment, described stop part 103 is preferably back bias voltage battery lead plate with holes, and it is connected with back bias voltage power supply, can deflect by assisting ion, manipulates the outgoing situation of ion more accurately, injects to realize single-particle.
Therefore, as long as the present embodiment defines one apply the electric field of sufficient intensity, ion deflection along the outgoing of direction, axis and cannot through the aperture on stop part can be made, thus define a controlled micro ion injection device or single ion implantation apparatus.
Embodiment eight
As Figure 12, the present embodiment is relative to embodiment seven, and the structure of its second electrode assembly is different, and wherein said second electrode assembly 10 comprises: narrow meshed second cantilever beam 104 of needle point, and on the axis 3 being centrally located at described ion source 1 of aperture on needle point; And second grid bias power supply 102, it is for powering for described second cantilever beam 104, to make the electric field forming assisting ion deflection up and down between two tops of the needle point of the second cantilever beam 104.The effect of the electric field of this assisting ion deflection is identical with embodiment seven, is not repeated.
In the present embodiment, described second grid bias power supply is preferably back bias voltage power supply, and this back bias voltage power supply is used for powering to produce transverse electric field to cantilever beam, and cantilever beam is because needle point is with aperture, can play the barrier effect of the ion to deflection simultaneously.
In sum, embodiments of the invention one to embodiment six considers that the ion beam that ion source is launched has certain dispersion angle and diameter, ion beam is made to fly into a tapered electric field, thus only have the ion moved along axis not to be subject to the effect of the cross stream component of tapered electric field, for not being the ion moved along axis, as the direction of motion departs from the ion of axis certain angle, or with axis parallel but the ion at off-axis center, by the cross stream component effect by tapered electric field along deflecting perpendicular to axis direction, when ion arrives bottom, just create lateral displacement, thus the RC aperture in axis can not be positioned at through bottom.So just greatly reduce by aperture ion populations, considerably increase and realize minority ion or even isolated son by the possibility of aperture, meanwhile also collimation has been done to ion beam.On the basis of the ion implantation apparatus of embodiment one to embodiment six, embodiment seven and embodiment eight have carried out the design of ion gate, utilize electric field and the stop part of the assisting ion produced, one or several ion are passed through, and block passing through of ion afterwards, furthermore achieved that the injection of the even isolated son of a small amount of ion.
Below the preferred embodiment of the present invention is described in detail by reference to the accompanying drawings; but; the present invention is not limited to the detail in above-mentioned execution mode; within the scope of technical conceive of the present invention; can carry out multiple simple variant to technical scheme of the present invention, these simple variant all belong to protection scope of the present invention.
It should be noted that in addition, each the concrete technical characteristic described in above-mentioned embodiment, in reconcilable situation, can be combined by any suitable mode.In order to avoid unnecessary repetition, the present invention illustrates no longer separately to various possible compound mode.
In addition, also can carry out combination in any between various different execution mode of the present invention, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.
Claims (10)
1. an ion implantation apparatus, for by ion implantation sample, is characterized in that, comprising:
Ion source (1), its for generation of and launch ion beam (2); And
First electrode assembly (5), it is arranged on described ion source (1) on the path of described sample (4), for generation of the tapered electric field (6) along described ionogenic axis (3) directional spreding, and the ion not along the motion of ionogenic axis (3) direction in described ion beam (2) is made not inject described sample (4) along the direction deflection perpendicular to described axis (3) under the effect of this tapered electric field (6).
2. ion implantation apparatus according to claim 1, is characterized in that, described first electrode assembly (5) comprising:
Be with foraminate electric pole plate (501), it is arranged on described ion source (1) on the path of described sample (4), and near described ion source (1);
Be with foraminate lower electrode plate (502), it is arranged on described ion source (1) on the path of described sample (4), and near described sample (4); And
First grid bias power supply (503), it is for described electric pole plate (501) and described lower electrode plate (502) power supply, to make the tapered electric field (6) of axis (3) directional spreding formed between described electric pole plate (501) and described lower electrode plate (502) along described ion source (1);
Wherein, described electric pole plate (501) is not identical with described lower electrode plate (502) size, and the center of aperture on described electric pole plate (501) and described lower electrode plate (502) is all on the axis (3) of described ion source (1), the aperture of ion beam (2) on described electric pole plate (501) that described ion source (1) is launched enters described tapered electric field (6), and the aperture of ion on lower electrode plate (502) along the motion of ionogenic axis (3) direction leaves described tapered electric field (6).
3. ion implantation apparatus according to claim 2, is characterized in that, described electric pole plate (501) and described lower electrode plate (502) are plane electrode plate parallel to each other.
4. ion implantation apparatus according to claim 2, is characterized in that, described electric pole plate (501) and described lower electrode plate (502) are curved surface electrode plate.
5. ion implantation apparatus according to claim 2, is characterized in that, described electric pole plate (501) and described lower electrode plate (502) are annular electro polar circle.
6. ion implantation apparatus according to claim 2, it is characterized in that, described electric pole plate (501) is parallel to each other with described lower electrode plate (502), and described electric pole plate (501) is plane electrode plate, described lower electrode plate (502) is the narrow meshed cantilever beam in needle point center.
7. ion implantation apparatus according to claim 1, is characterized in that, described first electrode assembly (5) comprising:
With first cantilever beam (504) of needle point aperture (5042), and the upper and lower surface of this first cantilever beam (504) is all coated with annular electrode; And
First grid bias power supply (503), it is for powering to the upper and lower surface of the first cantilever beam (504), to make the tapered electric field (6) in axis (3) direction formed between the upper and lower surface of the first cantilever beam (504) along described ion source (1);
Wherein, the center of described needle point aperture (5042) is on the axis (3) of described ion source (1), the ion beam (2) that described ion source (1) is launched enters described tapered electric field (6) through the upper end of needle point aperture (5042), and the ion along the motion of ionogenic axis (3) direction leaves described tapered electric field (6) through the lower end of needle point aperture (5042).
8. ion implantation apparatus according to any one of claim 1 to 7, is characterized in that, described ion implantation apparatus also comprises:
Second electrode assembly (10), it is arranged on the downstream of described first electrode assembly (5), for generation of the electric field of assisting ion deflection, when this electric field is applied in, the ion entering the second electrode assembly (10) along axis (3) direction deflects and does not inject described sample (4), and this electric field is not when being applied in, the ion entering the second electrode assembly (10) along axis (3) direction is through the second electrode assembly (10) and be injected into described sample (4).
9. ion implantation apparatus according to claim 8, is characterized in that, described second electrode assembly (10) comprising:
Electrode pair (101), it is arranged on the downstream of described first electrode assembly (5), for generation of the electric field of assisting ion deflection;
Second grid bias power supply (102), it is in described electrode pair (101) power supply, to make the electric field forming the deflection of described assisting ion between described electrode pair (101); And
Be with foraminate stop part (103), it is arranged on the lower end of the electric field of described assisting ion deflection, and near described sample (4), and on the axis (3) being centrally located at described ion source (1) of aperture on this stop part (103).
10. ion implantation apparatus according to claim 8, is characterized in that, described second electrode assembly (10) comprising:
Narrow meshed second cantilever beam (104) of needle point, and on the axis (3) being centrally located at described ion source (1) of aperture on needle point; And
Second grid bias power supply (102), it is for being described second cantilever beam (104) power supply, to make the electric field forming assisting ion deflection up and down between two tops of the needle point of the second cantilever beam (104).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510419657.6A CN105006417B (en) | 2015-07-16 | 2015-07-16 | A kind of ion implantation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510419657.6A CN105006417B (en) | 2015-07-16 | 2015-07-16 | A kind of ion implantation apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105006417A true CN105006417A (en) | 2015-10-28 |
| CN105006417B CN105006417B (en) | 2017-06-13 |
Family
ID=54379046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510419657.6A Active CN105006417B (en) | 2015-07-16 | 2015-07-16 | A kind of ion implantation apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105006417B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109212398A (en) * | 2017-07-01 | 2019-01-15 | 微龛（北京）半导体科技有限公司 | A kind of method of parasitical bipolar transistor effect amplification coefficient caused by measurement single particle effect |
| CN115637414A (en) * | 2022-10-31 | 2023-01-24 | 江苏省特种设备安全监督检验研究院 | Ultrasonic-assisted ion implantation device and processing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100351248B1 (en) * | 1994-07-06 | 2002-12-11 | 주식회사 하이닉스반도체 | Ion implantation method and apparatus using electric field |
| JP2006260880A (en) * | 2005-03-16 | 2006-09-28 | Kyoto Univ | Ion source and aperture forming method |
| CN101930894A (en) * | 2009-06-19 | 2010-12-29 | 东京毅力科创株式会社 | Charged particle separation apparatus and charged particle bombardment apparatus |
| CN204834561U (en) * | 2015-07-16 | 2015-12-02 | 周向前 | Ion implantation device |
-
2015
- 2015-07-16 CN CN201510419657.6A patent/CN105006417B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100351248B1 (en) * | 1994-07-06 | 2002-12-11 | 주식회사 하이닉스반도체 | Ion implantation method and apparatus using electric field |
| JP2006260880A (en) * | 2005-03-16 | 2006-09-28 | Kyoto Univ | Ion source and aperture forming method |
| CN101930894A (en) * | 2009-06-19 | 2010-12-29 | 东京毅力科创株式会社 | Charged particle separation apparatus and charged particle bombardment apparatus |
| CN204834561U (en) * | 2015-07-16 | 2015-12-02 | 周向前 | Ion implantation device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109212398A (en) * | 2017-07-01 | 2019-01-15 | 微龛（北京）半导体科技有限公司 | A kind of method of parasitical bipolar transistor effect amplification coefficient caused by measurement single particle effect |
| CN115637414A (en) * | 2022-10-31 | 2023-01-24 | 江苏省特种设备安全监督检验研究院 | Ultrasonic-assisted ion implantation device and processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105006417B (en) | 2017-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2158796B1 (en) | Beam transport system and method for linear accelerators | |
| US7576499B2 (en) | Sequentially pulsed traveling wave accelerator | |
| US7710051B2 (en) | Compact accelerator for medical therapy | |
| KR20080059395A (en) | Sequentially pulsed traveling wave accelerator | |
| CN103841745B (en) | Cyclotron | |
| CN206774500U (en) | A kind of new array radio frequency-ion source device | |
| CN103310865B (en) | A kind of light anode proton source | |
| WO2017148460A3 (en) | Device and method for structure-controlled electrospinning | |
| CN105006417A (en) | Ion implantation apparatus | |
| CN204834561U (en) | Ion implantation device | |
| CN104703381B (en) | Circular accelerator and particle beam therapeutic apparatus | |
| US20160379793A1 (en) | Beam focusing and accelerating system | |
| JP7318935B2 (en) | Accelerators and accelerator systems | |
| CN108811299B (en) | Online adjusting system and method for central area beam current intensity of proton cyclotron | |
| KR101949921B1 (en) | A device for extraction of electrical charge carriers from a charge carrier generating space and a method for operating such a device | |
| CN208093168U (en) | Charged particle beam disperser and X-ray emission device | |
| CN209056459U (en) | A kind of focusing ring | |
| CN112657072A (en) | Ultrahigh-dose-rate proton treatment device based on linear accelerator and scanning method | |
| US10278276B2 (en) | Short pulse neutron generator | |
| Son et al. | Electron gun and collector for RAON EBIS charge breeder | |
| CN112911784B (en) | Focusing device of laser acceleration pulse proton beam | |
| Alessi et al. | Design and performance of the matching beamline between the BNL EBIS and an RFQ | |
| WO2019058511A1 (en) | Ion source device | |
| Pikin et al. | Ion optics of RHIC EBIS | |
| Celata et al. | Transverse combining of four beams in MBE-4 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200709 Address after: 2 / F, building 13, No. 27, Xinjinqiao Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Baiji Nanotechnology (Shanghai) Co., Ltd Address before: 100083, room 1408, block B, Tiangong building, No. 30, Haidian District, Beijing, Xueyuan Road Patentee before: Zhou Xiangqian |
|
| TR01 | Transfer of patent right |