CN105005147A - Pixel design method and naked eye 3D stereoscopic display device - Google Patents
Pixel design method and naked eye 3D stereoscopic display device Download PDFInfo
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- CN105005147A CN105005147A CN201510458202.5A CN201510458202A CN105005147A CN 105005147 A CN105005147 A CN 105005147A CN 201510458202 A CN201510458202 A CN 201510458202A CN 105005147 A CN105005147 A CN 105005147A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
- G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
- G02B30/26—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type
- G02B30/27—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type involving lenticular arrays
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B30/00—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images
- G02B30/20—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes
- G02B30/26—Optical systems or apparatus for producing three-dimensional [3D] effects, e.g. stereoscopic images by providing first and second parallax images to an observer's left and right eyes of the autostereoscopic type
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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Abstract
The invention relates to the technical field of naked eye 3D, and particularly relates to a pixel design method and a naked eye 3D stereoscopic display device. According to the naked eye 3D stereoscopic display device, sub-pixels in the same row in a 2D display are same sub-pixels; each sub-pixel is divided into a first quadrant region, a second quadrant region, a third quadrant region and a fourth quadrant region from left to right and from top to bottom; a thin film transistor TFT corresponding to each sub-pixel is arranged in a predetermined quadrant region of the corresponding sub-pixel; a scan line which is used for controlling on and off of a TFT is arranged corresponding to each row of sub-pixel, and a signal line which is used for charging and discharging of a TFT is arranged corresponding to each column of sub-pixel; and a TFT corresponding to each sub-pixel is connected with an adjacent scan line and signal line. According to the naked eye 3D stereoscopic display device provided by the invention, moire produced by the naked eye 3D stereoscopic display device can be reduced, and the viewing comfort is improved.
Description
Technical field
The present invention relates to bore hole 3D technical field, in particular to a kind of Pixel Design method and bore hole 3D 3 d display device.
Background technology
Bore hole 3D 3 d display device obtains applying comparatively widely at individual consumer's goods and commercial kitchen area owing to possessing good viewing degree of freedom, as small size bore hole 3D mobile phone, small-medium size bore hole 3D flat board, notebook, desktop displays and large scale commercial advertisement machine etc.In these bore hole 3D 3 d display devices, the depth perception comparatively commonly utilizing the binocular parallax of people and convergence to form realizes the post lens display technique of stereo display and utilizes the slit grating stereo display technique of disparity barrier principle.
Fig. 1 is a kind of liquid crystal lens pillar film 3 d display device of the common individual consumer's goods field that is applied to.This liquid crystal lens pillar film 3 d display device 100 comprises three parts generally, and namely 2D shows module 110, rotatory device 120 and liquid crystal lens pillar film 130.Wherein, 2D shows module 110 and mainly comprises backlight 111, upper (colored filter) glass substrate 115, under (array) glass substrate 114, the liquid crystal layer (not shown) being attached at the upper polaroid 113 on top glass substrate 115 and lower glass substrate 114 surface and lower polaroid 112 respectively and being sealed between top glass substrate 115 and lower glass substrate 114.116 is be formed at the array of sub-pixels on lower glass substrate 114, and 117 is be formed at the black matrix" on top glass substrate 115, is jointly defined the actual transmission region of sub-pixel by array of sub-pixels 116 and black matrix" 117.Rotatory device 120 mainly comprises top glass substrate 122 and lower glass substrate 121, be formed at the electrode 124 of top glass substrate 122 side, the electrode 123 being formed at lower glass substrate 121 side and the liquid crystal layer (not shown) be sealed between top glass substrate 122 and lower glass substrate 121.Liquid crystal lens pillar film 130 mainly comprises two parts, i.e. lens coating material 131 and the uv-curing type liquid crystal layer 132 that is formed in each lens unit 133 groove of lens coating 131.Liquid crystal lens pillar film 130 and rotatory device 120 generally carry out face subsides by Optical transparent adhesive or liquid optical cement, and rotatory device 120 and 2D show between module 110 and generally carry out face subsides by liquid optical cement.By the refractive index n of matched lenses the membrane material 131 and birefraction (ne of uv-curing type liquid crystal layer 132 liquid crystal material, no), make ne>no=n, and control the switch of rotatory device 120,2D and 3D can be realized and freely switch.
Fig. 2 is the liquid crystal slit grating 3 d display device in the another kind of common individual consumer's goods field that is applied to.This 3 d display device 200 comprises two parts, and namely 2D shows module 210 and liquid crystal slit grating 220.Wherein liquid crystal slit grating 220 mainly comprises: just to the top glass substrate 222 arranged and lower glass substrate 221, be attached at the upper polaroid 228 outside top glass substrate 222 and lower glass substrate 221 and lower polaroid 227 respectively, and the upper transparency electrode 224 be separately positioned on inside top glass substrate 222 and lower glass substrate 221 and lower transparency electrode 223.2D shows module 210 and generally carries out face subsides by liquid optical cement with liquid crystal slit grating 220.When liquid crystal slit grating 220 is opened, 225 are lightproof area, and 226 is transmission region.Freely switch although this 3 d display device 200 can realize 2D and 3D, significantly do not affect when liquid crystal slit grating 220 is closed on 2D display quality, compare the 3 d display device 100 shown in Fig. 1 during 3D display, brightness is subject to very large loss.
It is a kind of 2D incompatible lens pillar film 3 d display device shown in Fig. 3.This 3 d display device 300 comprises 2D and shows module 310 and lens pillar film 330 two major parts.Wherein, 2D shows module 310 and mainly comprises backlight 311, top glass substrate 315, lower glass substrate 314, the liquid crystal layer (not shown) being attached at the upper polaroid 313 on top glass substrate 315 and lower glass substrate 314 surface and lower polaroid 312 respectively and being sealed between top glass substrate 315 and lower glass substrate 314.316 is be formed at the array of sub-pixels on lower glass substrate 314, and 317 is be formed at the black matrix" on top glass substrate 315, is jointly defined the actual transmission region of sub-pixel by array of sub-pixels 316 and black matrix" 317.Lens pillar film 330 comprises matrix material 331 and the lens arra 332 be formed on matrix material 331, and wherein lens arra 332 comprises multiple lens unit 333.This 3 d display device 300 is when carrying out 3D display, compare slit grating 3 d display device and still possess higher brightness, but due to can not compatible 2D, the resolution that 2D is shown is had a strong impact on, therefore lessly individual consumer's goods and routine office work field is applied in, the full 3D be generally exclusively used in brightness has higher requirements shows occasion, as the commercial advertisement etc. of open air;
It is the incompatible slit grating 3 d display device of a kind of 2D shown in Fig. 4.This 3 d display device 400 comprises 2D and shows module 410 and slit grating film 430 two major parts.Wherein the structure of 2D display module 410 is identical with the structure that the 2D in Fig. 1-3 shows module, repeats no more.Slit grating film 430 comprises matrix material 431 and is formed at the black light shield layer 435 of matrix material 431 side, and wherein 436 is transmission region.This display device can not show by compatible 2D, and its brightness and resolution etc. when 2D shows all are had a strong impact on; When 3D shows, because the area of black light shield layer 435 is much larger than the area of transmission region 436, when causing 3D to show, brightness is very low, and its application is very restricted.
Above-mentioned various bore hole 3D 3 d display device, no matter be that 2D/3D is compatible or only suitable 3D shows, no matter be adopt slit grating class stereo display technique or adopt post lens class stereo display technique, usually moire fringes is there is when 3D shows, namely human eye can observe wide or narrow chequered with black and white striped on a display screen, affects stereo display quality.Generally speaking, the appearance of this moire fringes because the grating fringe that on 2D display panel colored filter, black matrix" and the slit grating periodicity of periodic arrangement occurs or cylindrical lens array superpose to produce to interfere mutually causes.For overcoming the moire fringes of stereo display, the technology such as the angle of inclination of such as adjustment column lens arra or slit grating obtain to be applied comparatively widely, but in a lot of situation, the moire fringes of 3 d display device is still very serious.
Summary of the invention
The object of the present invention is to provide a kind of Pixel Design method and bore hole 3D 3 d display device, to cut down the moire fringes produced in bore hole 3D 3 d display device, improve viewing comfort level.
First aspect, embodiments provides a kind of bore hole 3D 3 d display device, is identical sub-pixel with the sub-pixel of a line in 2D display screen; Each described sub-pixel is divided into first quartile region, the second quadrant area, third quadrant region and fourth quadrant region according to order from left to right, from top to bottom; The thin film transistor (TFT) TFT corresponding with each described sub-pixel is separately positioned on the set quadrant area of the sub-pixel corresponding to it; Corresponding often capable described sub-pixel arranges the sweep trace for control TFT switch respectively, and correspondence often arranges described sub-pixel and arranges for the signal wire for described TFT discharge and recharge respectively; The described TFT corresponding with each sub-pixel is connected with its contiguous described sweep trace and described signal wire.
In conjunction with first aspect, embodiments provide the first possible embodiment of first aspect, wherein, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the first subelement; Wherein, described first subelement comprises the TFT of four sub-pixels, and four described arrangement of subpixels are two row two row; TFT corresponding to the first row first row sub-pixel is distributed in described first quartile region; TFT corresponding to the first row secondary series sub-pixel is distributed in described third quadrant region; TFT corresponding to second row first row sub-pixel is distributed in described fourth quadrant region; TFT corresponding to second row secondary series sub-pixel is distributed in described second quadrant area.
In conjunction with first aspect, embodiments provide the embodiment that the second of first aspect is possible, wherein, the TFT being positioned at the sub-pixel of odd-numbered line is all arranged on the first quartile region of the sub-pixel corresponding to it; The TFT being positioned at the sub-pixel of even number line is all arranged on the second quadrant area of the sub-pixel corresponding to it.
In conjunction with first aspect, embodiments provide the third possible embodiment of first aspect, wherein, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the second subelement; Wherein, in described second subelement, comprise the TFT of four lines four row sub-pixel; First row and the TFT corresponding to the 4th row sub-pixel lay respectively at the first quartile region of the sub-pixel corresponding to it; TFT corresponding to secondary series level the 3rd row sub-pixel lays respectively at the third quadrant region of the sub-pixel corresponding to it.
In conjunction with first aspect, embodiments provide the 4th kind of possible embodiment of first aspect, wherein, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 3rd subelement; Wherein, in described second subelement, comprise the TFT of four lines four row sub-pixel; First row and the TFT corresponding to secondary series sub-pixel lay respectively at the first quartile region of the sub-pixel corresponding to it; 3rd row and the TFT corresponding to the 4th row sub-pixel lay respectively at the third quadrant region of the sub-pixel corresponding to it.
In conjunction with first aspect, embodiments provide the 5th kind of possible embodiment of first aspect, wherein, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 4th subelement; Wherein, described 4th subelement comprises the TFT of adjacent two row sub-pixels; TFT corresponding to first row sub-pixel lays respectively at the first quartile region of the sub-pixel corresponding to it; TFT corresponding to secondary series sub-pixel lays respectively at the second quadrant area of the sub-pixel corresponding to it.
In conjunction with first aspect, embodiments provide the 6th kind of possible embodiment of first aspect, wherein, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 5th subelement; Wherein, described 5th subelement comprises the TFT of adjacent two row sub-pixels; TFT corresponding to first row sub-pixel lays respectively at the first quartile region of the sub-pixel corresponding to it; TFT corresponding to secondary series sub-pixel lays respectively at the fourth quadrant region of the sub-pixel corresponding to it.
In conjunction with first aspect, embodiments provide the 7th kind of possible embodiment of first aspect, wherein, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 6th subelement; Wherein, described 6th subelement comprises the TFT of adjacent four row sub-pixels; TFT corresponding to first row sub-pixel lays respectively at the first quartile region of the sub-pixel corresponding to himself; TFT corresponding to secondary series sub-pixel lays respectively at the fourth quadrant region of the sub-pixel corresponding to himself; TFT corresponding to 3rd row sub-pixel lays respectively at the third quadrant region of the sub-pixel corresponding to himself; TFT corresponding to 4th row sub-pixel lays respectively at the second quadrant area of the sub-pixel corresponding to himself.
In conjunction with first aspect, embodiments provide the 8th kind of possible embodiment of first aspect, wherein, when have employed H type common electrode in 2D display screen and increasing memory capacitance, comprise: the transverse electrode in the H type electrode of 2D display screen sub-pixel is according to the arrangement mode repeated arrangement of the first mirror image unit, wherein said first mirror image unit comprises first module and the second unit of mutual specular, wherein said first module comprises the transverse electrode of a row sub-pixel, the transverse electrode of this row sub-pixel line by line after convergence axis of symmetry line by line away from axis of symmetry, or, transverse electrode in the H type electrode of 2D display screen sub-pixel is according to the arrangement mode repeated arrangement of the second mirror image unit, wherein said second mirror image unit comprises Unit the 3rd and Unit the 4th of mutual specular, wherein said Unit the 3rd comprises the transverse electrode of two identical row sub-pixels of distribution form, often row transverse electrode line by line after convergence axis of symmetry line by line away from axis of symmetry, or, transverse electrode in the H type electrode of 2D display screen sub-pixel is according to the arrangement mode repeated arrangement of the 3rd mirror image unit, wherein said 3rd mirror image unit comprises Unit the 5th and Unit the 6th of mutual specular, wherein said Unit the 5th comprises the transverse electrode of two identical row sub-pixels of distribution form, often row transverse electrode convergence axis of symmetry line by line.
Second aspect, the embodiment of the present invention additionally provides a kind of Pixel Design method, comprising: be identical sub-pixel with the sub-pixel of a line in 2D display screen; Each described sub-pixel is divided into first quartile region, the second quadrant area, third quadrant region and fourth quadrant region according to order from left to right, from top to bottom; The thin film transistor (TFT) TFT corresponding with each described sub-pixel is separately positioned on the set quadrant area of the sub-pixel corresponding to it; Corresponding often capable described sub-pixel arranges the sweep trace for control TFT switch respectively, and correspondence often arranges described sub-pixel and arranges for the signal wire for described TFT discharge and recharge respectively; The described TFT corresponding with each sub-pixel is made to be connected with its contiguous described sweep trace and described signal wire.
In bore hole 3D display device, the 2D display screen that 2D display module comprises adopts thin film transistor (TFT) TFT mode to drive, namely each liquid crystal pixel point of 2D display screen is driven by the TFT be integrated in after pixel, in the Pixel Design method of the embodiment of the present invention and bore hole 3D display device, by optimizing the Pixel Design of 2D display screen, by the difference of the TFT design attitude of different pixels, thus the shape of black matrix" profile or actual transmission region in change 3 d display device, break the periodicity that in 3 d display device, identical black matrix" occurs, cut down black matrix" and superpose with slit grating or cylindrical lens array the moire fringes produced, improve viewing comfort level.
For making above-mentioned purpose of the present invention, feature and advantage become apparent, preferred embodiment cited below particularly, and coordinate appended accompanying drawing, be described in detail below.
Accompanying drawing explanation
Fig. 1 shows the structural representation of liquid crystal lens pillar film 3 d display device in prior art;
Fig. 2 shows the structural representation of liquid crystal slit grating 3 d display device in prior art;
Fig. 3 shows the structural representation of the incompatible lens pillar film of 2D in prior art 3 d display device;
Fig. 4 shows the structural representation of the incompatible slit grating 3 d display device of 2D in prior art;
Fig. 5 shows the structural representation of the bore hole 3D 3 d display device of first embodiment of the invention;
Fig. 6 shows first embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Fig. 7 shows the structural representation of the bore hole 3D 3 d display device of second embodiment of the invention;
Fig. 8 shows second embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Fig. 9 shows the structural representation of the bore hole 3D 3 d display device of third embodiment of the invention;
Figure 10 shows third embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Figure 11 shows the structural representation of the bore hole 3D 3 d display device of fourth embodiment of the invention;
Figure 12 shows fourth embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Figure 13 shows the structural representation of the bore hole 3D 3 d display device of fifth embodiment of the invention;
Figure 14 shows fifth embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Figure 15 shows the structural representation of the bore hole 3D 3 d display device of sixth embodiment of the invention;
Figure 16 shows sixth embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Figure 17 shows the structural representation of the bore hole 3D 3 d display device of seventh embodiment of the invention;
Figure 18 shows seventh embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Figure 19 shows the design diagram that H type common electrode increases memory capacitance;
Figure 20 shows the structural representation of the bore hole 3D 3 d display device of eighth embodiment of the invention;
Figure 21 shows eighth embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Figure 22 shows the structural representation of the bore hole 3D 3 d display device of ninth embodiment of the invention;
Figure 23 shows ninth embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram;
Figure 24 shows the structural representation of the bore hole 3D 3 d display device of tenth embodiment of the invention;
Figure 25 shows tenth embodiment of the invention bore hole 3D 3 d display device printing opacity schematic diagram.
Embodiment
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.
As shown in Figure 5,1000 is bore hole 3D 3 d display device Pixel Design first embodiment vertical views, wherein D1-D5 etc. represent signal wire, G1-G7 etc. represent sweep trace, Col1, Col2, Col3 and Col4 etc. represent a row sub-pixel respectively, and in figure, 1001 represent the TFT position corresponding to sub-pixel, and 1002 represent a sub-pixel, each sub-pixel is divided into I, II, III and IV tetra-regions as 1002, and each sub-pixel such as "+" on 1002 and "-" represent the positive-negative polarity of sub-pixel.If every a line is identical sub-pixel, as the first behavior R sub-pixel, the second behavior G sub-pixel, the third line is B sub-pixel etc.For post lens 3 d display device, each lens unit L1 covers two row sub-pixels.Specifically, the sub-pixel being set in capable n-th row of m is P
m/n, namely the sub-pixel of the first row first row is P
1/1, the sub-pixel of the first row secondary series is P
1/2, the sub-pixel of the second row first row is P
2/1deng, then sub-pixel P
1/1corresponding TFT is positioned at I district, sub-pixel P
2/2corresponding TFT is positioned at II district, sub-pixel P
1/2corresponding TFT is positioned at III district, sub-pixel P
2/1corresponding TFT is positioned at IV district.In whole 3 d display device, with sub-pixel P
1/1, sub-pixel P
2/2, sub-pixel P
1/2and sub-pixel P
2/1be a repetitive, namely the sub-pixel of every a line carries out switch by adjacent two sweep traces respectively, and the sub-pixel of each row carries out discharge and recharge, as P by two adjacent signal line respectively
1/1its switch is controlled and by signal wire D1 discharge and recharge, P by sweep trace G1
1/2its switch is controlled and by signal wire D2 discharge and recharge, P by sweep trace G2
2/1its switch is controlled and by signal wire D2 discharge and recharge etc. by sweep trace G3.Within each frame i.e. a frame, as sweep trace G1, G2, ..., when Gm opens successively, each signal line remains that same polarity is carried out discharge and recharge and can be realized a reversion to reduce film flicker (flicker), so also can arrive the object of power saving, as within a frame, signal wire D1, signal wire D3, signal wire D5 etc. is always high voltage (high voltage here, the relative common voltage of low-voltage, when the voltage of signal wire is positive polarity "+" higher than sub-pixel during common electrode voltage), signal wire D2, signal wire D4 and signal wire D6 etc. are always low-voltage (when the voltage of signal wire is negative polarity "-" lower than sub-pixel during common electrode voltage).After a frame end, again the polarity of each sub-pixel is reversed when next frame starts, if signal wire D1, signal wire D3 and signal wire D5 are low-voltage (corresponding sub-pixel becomes negative polarity by positive polarity) by high-voltage variable, signal wire D2, signal wire D4 and signal wire D6 etc. become high voltage (corresponding sub-pixel becomes positive polarity by negative polarity) from low-voltage.
Pixel Design according to Fig. 5 and 3 d display device, because of the difference of TFT position corresponding to each sub-pixel, the black matrix" profile causing colored filter corresponding and actual transmission region change.If Fig. 6 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, wherein 1003 is actual transmission region, 1004 is black matrix", for lens unit L1, two the sub-pixel profiles or the actual transmission region that every a line correspond to right and left eyes are all not identical, as can be seen here, factor pixel TFT position is changed, broken all sub-pixels in whole 3 d display device and possessed the regularity of identical appearance, the change by black matrix" or actual transmission region profile reduces the moire fringes of whole 3 d display device.
Shown in Fig. 7,2000 is 3 d display device Pixel Design second embodiment vertical view.Wherein 2001 is the TFT position that sub-pixel is corresponding.When each sub-pixel being divided into I, II, III and IV tetra-regions, the TFT that odd rows is corresponding is positioned at I district, the TFT that even number line sub-pixel is corresponding is positioned at II district, in whole 3 d display device, the TFT corresponding with the sub-pixel of a line carries out switch by same sweep trace, and the sub-pixel of same row then carries out discharge and recharge by two adjacent signal line.Within each frame, when sweep trace G1, G2 ..., Gm open successively, each signal line remains that same polarity is carried out discharge and recharge and can be realized a reversion to reduce film flicker, so can arrive the object of power saving, as within a frame, signal wire D1, D3 and D5 etc. are always high voltage, and signal wire D2, D4 and D6 etc. are always low-voltage.After a frame end, the polarity of each sub-pixel reversed when next frame starts, if D1, D3 and D5 are low-voltage by high-voltage variable, D2, D4 and D6 etc. become high voltage from low-voltage again.
Pixel Design according to Fig. 7 and naked-eye stereoscopic display device, the difference of the TFT position that the sub-pixel because of adjacent rows is corresponding, the black matrix" profile causing colored filter corresponding and actual transmission region difference.If Fig. 8 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, wherein 2003 is actual transmission region, 2004 is black matrix", as can be seen here, factor pixel TFT position is changed, odd-numbered line and even number line sub-pixel profile produce difference, have broken all sub-pixels in whole 3 d display device and have possessed the regularity of identical appearance, and the change by black matrix" or actual transmission region profile reduces the moire fringes of whole 3 d display device.
Shown in Fig. 9,3000 is 3 d display device Pixel Design the 3rd embodiment vertical view.When each sub-pixel being divided into I, II, III and IV tetra-regions, first row and TFT corresponding to the 4th row sub-pixel are positioned at I district, and secondary series and TFT corresponding to the 3rd row sub-pixel are positioned at III district.In whole 3 d display device, with first row to the 4th row Pixel Design be a repetitive, the TFT corresponding with the sub-pixel of a line carries out switch by adjacent two sweep traces, and the sub-pixel of same row then carries out discharge and recharge by same signal wire, as sub-pixel P
1/1and sub-pixel P
1/4switch is carried out, sub-pixel P by sweep trace G1
1/2and sub-pixel P
1/3switch is carried out by sweep trace G2.For realizing some reversion, within each frame, as sweep trace G1, G2 ..., when Gm opens successively, each signal line must change its positive-negative polarity to reduce film flicker after corresponding sweep trace is opened, as within a frame, when sweep trace G1 opens, signal wire D1 and signal wire D2 etc. are high voltage, and signal wire D3 and signal wire D4 etc. are low-voltage; When sweep trace G2 opens, signal wire D1 and signal wire D2 etc. are low-voltage, and signal wire D3 and signal wire D4 etc. are high voltage; Open situation when sweep trace G3 opens with sweep trace G1 identical, signal wire D1 and signal wire D2 etc. are high voltage, and signal wire D3 and signal wire D4 etc. are low-voltage.After a frame end, again the polarity of each sub-pixel is reversed when next frame starts, as when sweep trace G1 opens again, signal wire D1 and signal wire D2 etc. are low-voltage by the high-voltage variable of previous frame, and signal wire D3 and signal wire D4 etc. become high voltage from the low-voltage of previous frame.
Pixel Design according to Fig. 9, the TFT position corresponding because of the sub-pixel of every two row is different, the black matrix" profile causing colored filter corresponding and actual transmission region change, the sub-pixel shape corresponding to right and left eyes in each lens coverage is different, and odd column is different from the sub-pixel shape that even column lens unit covers.If Figure 10 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, wherein 3003 is actual transmission region, 3004 is black matrix", as can be seen here, because every two row sub-pixel TFT positions are changed, the sub-pixel profiles of every two row produce differences, and broken all sub-pixels in whole 3 d display device and possessed the regularity of identical appearance, the change by black matrix" or actual transmission region profile reduces the moire fringes of whole 3 d display device.
Shown in Figure 11,4000 is 3 d display device Pixel Design the 4th embodiment vertical view.When each sub-pixel being divided into I, II, III and IV tetra-regions, first row and TFT corresponding to secondary series sub-pixel are positioned at I district, and the 3rd row and TFT corresponding to the 4th row sub-pixel are positioned at III district.In whole 3 d display device, with first row to the 4th row Pixel Design be a repetitive, the TFT corresponding with the sub-pixel of a line carries out switch by adjacent two sweep traces, and the sub-pixel of same row then carries out discharge and recharge by same signal wire, as sub-pixel P
1/1and P
1/2switch is carried out, sub-pixel P by sweep trace G1
1/3and sub-pixel P
1/4switch is carried out by sweep trace G2.For realizing some reversion, within each frame, when sweep trace G1, G2 ..., Gm open successively, each signal line must change its positive-negative polarity to reduce film flicker after corresponding sweep trace is opened, as within a frame, when sweep trace G1 opens, signal wire D1 and signal wire D4 etc. are high voltage, and signal wire D2 and signal wire D3 etc. are low-voltage; When sweep trace G2 opens, signal wire D1 and signal wire D4 etc. are low-voltage, and signal wire D2 and signal wire D3 etc. are high voltage; Open situation when sweep trace G3 opens with sweep trace G1 identical, signal wire D1 and signal wire D4 etc. are high voltage, and signal wire D2 and signal wire D3 etc. are low-voltage.After a frame end, again the polarity of each sub-pixel is reversed when next frame starts, as when sweep trace G1 opens again, signal wire D1 and signal wire D4 etc. are low-voltage by the high-voltage variable of previous frame, and signal wire D2 and signal wire D3 etc. become high voltage from the low-voltage of previous frame.
Pixel Design according to Figure 11, the TFT position corresponding because of the sub-pixel of every two row is different, the black matrix" profile causing colored filter corresponding and actual transmission region change, the sub-pixel shape corresponding to right and left eyes in each lens coverage is identical, but odd column is different from the sub-pixel shape that even column lens unit covers.If Figure 12 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, wherein 4003 is actual transmission region, 4004 is black matrix", as can be seen here, because every two row sub-pixel TFT positions occur once to change, the sub-pixel profile of every two row produces difference, contributes to the moire fringes reducing whole 3 d display device.
Shown in Figure 13,5000 is 3 d display device Pixel Design the 5th embodiment vertical view.When each sub-pixel being divided into I, II, III and IV tetra-regions, the TFT that first row sub-pixel is corresponding is positioned at I district, and the TFT that secondary series sub-pixel is corresponding is positioned at II district.In whole 3 d display device, be a repetitive with the Pixel Design of first row and secondary series, the TFT corresponding with the sub-pixel of a line carries out switch by same sweep trace, the sub-pixel of same row carries out discharge and recharge by same signal wire, but every two signal line are arranged on adjacent position, namely to be separated by between signal wire D1 and signal wire D2 two sub-pixels, and to there is no sub-pixel between signal wire D2 and signal wire D3.For realizing some reversion, within each frame, as sweep trace G1, G2 ..., when Gm opens successively, each signal line must change its positive-negative polarity to reduce film flicker after corresponding sweep trace is opened, as within a frame, when sweep trace G1 opens, signal wire D1 and signal wire D3 etc. are high voltage, and signal wire D2 and signal wire D4 etc. are low-voltage; When sweep trace G2 opens, signal wire D1 and signal wire D3 etc. are low-voltage, and signal wire D2 and signal wire D4 etc. are high voltage; Open situation when sweep trace G3 opens with sweep trace G1 identical, signal wire D1 and signal wire D3 etc. are high voltage, and signal wire D2 and signal wire D4 etc. are low-voltage.After a frame end, again the polarity of each sub-pixel is reversed when next frame starts, as when sweep trace G1 opens again, signal wire D1 and signal wire D3 etc. are low-voltage by the high-voltage variable of previous frame, and signal wire D2 and signal wire D4 etc. become high voltage from the low-voltage of previous frame.
Pixel Design according to Figure 13, because the TFT position that often row sub-pixel is corresponding is different, the black matrix" profile causing colored filter corresponding and actual transmission region change, and correspond to the sub-pixel shape mirror image each other of right and left eyes in each lens coverage.If Figure 14 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, as can be seen here, because every row sub-pixel TFT position occurs once to change, often the profile of row sub-pixel or actual transmission region different, contribute to the moire fringes reducing whole 3 d display device.
Shown in Figure 15,6000 is 3 d display device Pixel Design the 6th embodiment vertical view.When each sub-pixel being divided into I, II, III and IV tetra-regions, the TFT that first row sub-pixel is corresponding is positioned at I district, and the TFT that secondary series sub-pixel is corresponding is positioned at IV district.In whole 3 d display device, be a repetitive with the Pixel Design of first row and secondary series, the TFT corresponding with the sub-pixel of a line carries out switch by adjacent two sweep traces, the sub-pixel of same row then carries out discharge and recharge by same signal wire, every two signal line are arranged on adjacent position, namely to be separated by between signal wire D1 and signal wire D2 two sub-pixels, and to there is no sub-pixel between signal wire D2 and signal wire D3.For realizing some reversion, within each frame, as sweep trace G1, G2 ..., when Gm opens successively, each signal line must change its positive-negative polarity to reduce film flicker after corresponding sweep trace is opened, as within a frame, when sweep trace G1 opens, signal wire D1, signal wire D2, signal wire D3 and signal wire D4 etc. are high voltage; When sweep trace G2 opens, signal wire D1, signal wire D2, signal wire D3 and signal wire D4 etc. are low-voltage; Open situation when sweep trace G3 opens with sweep trace G1 identical, signal wire D1, signal wire D2, signal wire D3 and signal wire D4 etc. are high voltage.After a frame end, the polarity of each sub-pixel reversed when next frame starts, as when sweep trace G1 opens again, signal wire D1, signal wire D2, signal wire D3 and signal wire D4 etc. are all low-voltage by the high-voltage variable of previous frame again.
Pixel Design according to Figure 15, the TFT position corresponding because of the sub-pixel often arranged is different, and the black matrix" profile causing colored filter corresponding and actual transmission region change.In each lens coverage, the sub-pixel shape corresponding to right and left eyes is different from each other.If Figure 16 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, as can be seen here, because often row sub-pixel TFT position occurs once to change, the profile of adjacent two row sub-pixels is different, will contribute to the moire fringes reducing whole 3 d display device.
Shown in Figure 17,7000 is 3 d display device Pixel Design the 7th embodiment vertical view.When each sub-pixel being divided into I, II, III and IV tetra-regions, the TFT that first row sub-pixel is corresponding is positioned at I district, the TFT that secondary series sub-pixel is corresponding is positioned at IV district, and the TFT that the 3rd row sub-pixel is corresponding is positioned at III district, and the TFT that the 4th row sub-pixel is corresponding is positioned at II district.In whole 3 d display device, with first row to the 4th row Pixel Design be a repetitive, the TFT corresponding with the sub-pixel of a line carries out switch by adjacent two sweep traces, the sub-pixel of same row then carries out discharge and recharge by same signal wire, every two signal line are arranged on adjacent position, namely to be separated by between signal wire D1 and signal wire D2 two sub-pixels, and to there is no sub-pixel between signal wire D2 and signal wire D3.For realizing some reversion, within each frame, as sweep trace G1, G2 ..., when Gm opens successively, each signal line must change its positive-negative polarity to reduce film flicker after corresponding sweep trace is opened, as within a frame, when sweep trace G1 opens, signal wire D1 and signal wire D2 etc. are high voltage, and signal wire D3 and signal wire D4 etc. are low-voltage; When sweep trace G2 opens, signal wire D1 and signal wire D2 etc. are low-voltage, and signal wire D3 and signal wire D4 is high voltage; Open situation when sweep trace G3 opens with sweep trace G1 identical, signal wire D1 and signal D2 etc. are high voltage, and signal wire D3 and signal wire D4 etc. are low-voltage.After a frame end, again the polarity of each sub-pixel is reversed when next frame starts, as when sweep trace G1 opens again, signal wire D1 and signal wire D2 etc. are low-voltage by the high-voltage variable of previous frame, and signal wire D3 and signal wire D4 etc. become high voltage from the low-voltage of previous frame.
Pixel Design according to Figure 17 and naked-eye stereoscopic display device, the TFT region corresponding because of arbitrary neighborhood two row sub-pixel is different, and the black matrix" profile causing colored filter corresponding and actual transmission region change.In each lens coverage, the sub-pixel shape corresponding to right and left eyes is different from each other, and the right and left eyes sub-pixel profile difference that adjacent two lens are corresponding respectively.If Figure 18 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, as can be seen here, because arbitrary neighborhood two row sub-pixel TFT position occurs once to change, the sub-pixel profile often arranged produces difference, will contribute to the moire fringes reducing whole 3 d display device.
As shown in figure 19, for the design adopting " H " type common electrode to increase memory capacitance, (namely in letter " H " one is horizontal for part in diagram dotted line frame, follow-uply be called transverse electrode), although do not have blocking of black matrix" herein, the existence of metal electrode still have impact on the shape of the actual transmission region of each sub-pixel.For weakening the moire fringes formed because structural periodicity arranges mutual superposition when pel array is assembled with slit grating or post lens further, the design attitude of H type common electrode can be changed further, that part especially in dotted line frame when Pixel Design.To any one Pixel Design above-mentioned, every employing similar H type common electrode increases the structural design of memory capacitance, all can implement, and only just the dot structure shown in Figure 17 is described below.
Shown in Figure 20,8000 is 3 d display device Pixel Design the 8th embodiment vertical view.In this design, the TFT distribution mode of sub-pixel is identical with the distribution mode in Figure 17 and a little reverse for realizing, and shown in type of drive with Figure 17, Pixel Design is identical, repeats no more.With the 7th embodiment unlike, in the H type of arbitrary neighborhood two row sub-pixel, transverse electrode design attitude is different, for the first row, as from the first row to the 7th row transverse electrode from I/III district gradually to the transition of II/IV district, 7th row to 13 row transverse electrodes from II/IV district gradually to the transition of I/III district, namely, only with regard to transverse electrode position, with the 7th behavior center up and down for mirror-image structure, certainly concrete line number is not limited here.In same lens unit, the sub-pixel transverse electrode mirror-image structure each other corresponding to right and left eyes, and the design of the transverse electrode of adjacent two lens units is identical.
Pixel Design according to Figure 20 and bore hole 3D display device, the TFT region corresponding because of arbitrary neighborhood two row sub-pixel is different, and between arbitrary neighborhood two row in H type electrode transverse electrode design attitude different, the black matrix" profile causing colored filter corresponding and actual transmission region change.In each lens coverage, the sub-pixel shape corresponding to right and left eyes has larger difference.If Figure 21 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, as can be seen here, because one-shot change occurs in arbitrary neighborhood two row sub-pixel TFT position, and in arbitrary neighborhood two row sub-pixel " H " type electrode " " electrode design position is different, the sub-pixel profile of each row and every a line all produces difference, will reduce the moire fringes of whole 3 d display device further.
Shown in Figure 22,9000 is 3 d display device Pixel Design the 9th embodiment vertical view.With the 8th embodiment shown in Figure 20 unlike, in the H type of arbitrary neighborhood two row sub-pixel, transverse electrode design attitude is different, and first row sub-pixel from the first row to the 6th row transverse electrode from I/III district gradually to the transition of II/IV district, 6th row to ten a line transverse electrodes from II/IV district gradually to the transition of I/III district, namely only with regard to transverse electrode, with the 6th behavior center up and down for mirror-image structure, and the design of secondary series sub-pixel transverse electrode is identical with first row.First secondary series sub-pixel and the three or four row sub-pixel are with signal wire D2 and signal wire D3 center line mirror-image structure each other.In same lens unit, identical and the sub-pixel in sub-pixel transverse electrode position corresponding to right and left eyes or transmission region profile different, the transverse electrode design of the sub-pixel corresponding to adjacent two lens unit right and left eyes, sub-pixel or transmission region profile are not identical.
Pixel Design according to Figure 22, the TFT region corresponding because of arbitrary neighborhood two row sub-pixel is different, and between arbitrary neighborhood two row in H type electrode transverse electrode design attitude different, the black matrix" profile causing colored filter corresponding and actual transmission region change.In each lens coverage, there is larger difference corresponding to the sub-pixel shape of right and left eyes or actual transmission region.If Figure 23 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, as can be seen here, because of arbitrary neighborhood two row sub-pixel TFT position difference, and transverse electrode design attitude is different in arbitrary neighborhood two row sub-pixel H type electrode, make the sub-pixel profile of each row and every a line or the actual transmission region of sub-pixel produce difference, contribute to the moire fringes reducing 3 d display device further.
Shown in Figure 24,10000 is 3 d display device Pixel Design the tenth embodiment vertical view.With the 8th embodiment shown in Figure 20 unlike, first row sub-pixel from the first row to the 6th row transverse electrode from I/III district gradually to the transition of II/IV district, 7th row to 12 row transverse electrodes also from I/III district gradually to the transition of II/IV district, and secondary series sub-pixel transverse electrode design identical with first row.First secondary series sub-pixel and the three or four row sub-pixel are with signal wire D2 and signal wire D3 center line mirror-image structure each other.In same lens unit, identical and the sub-pixel in sub-pixel transverse electrode position corresponding to right and left eyes or transmission region profile different, the different and sub-pixel in the transverse electrode position of the sub-pixel corresponding to adjacent two lens unit right and left eyes or transmission region profile different.
Pixel Design according to Figure 24, the TFT region corresponding because of arbitrary neighborhood two row sub-pixel is different, and between arbitrary neighborhood two row in H type electrode transverse electrode design attitude different, the black matrix" profile causing colored filter corresponding and actual transmission region produce difference.In each lens coverage, still have larger difference corresponding to the sub-pixel shape of right and left eyes or actual transmission region.If Figure 25 is corresponding black matrix" profile and actual transmission region schematic diagram when adopting this Pixel Design, as can be seen here, because of arbitrary neighborhood two row sub-pixel TFT position difference, and transverse electrode design attitude is different in arbitrary neighborhood two row sub-pixel H type electrode, the sub-pixel profile of each row and every a line or the actual transmission region of sub-pixel are all not quite similar, contribute to the moire fringes reducing 3 d display device further.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should described be as the criterion with the protection domain of claim.
Claims (10)
1. a bore hole 3D 3 d display device, is characterized in that, is identical sub-pixel with the sub-pixel of a line in 2D display screen;
Each described sub-pixel is divided into first quartile region, the second quadrant area, third quadrant region and fourth quadrant region according to order from left to right, from top to bottom;
The thin film transistor (TFT) TFT corresponding with each described sub-pixel is separately positioned on the set quadrant area of the sub-pixel corresponding to it;
Corresponding often capable described sub-pixel arranges the sweep trace for control TFT switch respectively, and correspondence often arranges described sub-pixel and arranges for the signal wire for described TFT discharge and recharge respectively;
The described TFT corresponding with each sub-pixel is connected with its contiguous described sweep trace and described signal wire.
2. bore hole 3D 3 d display device according to claim 1, is characterized in that, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the first subelement;
Wherein, described first subelement comprises the TFT of four sub-pixels, and four described arrangement of subpixels are two row two row;
TFT corresponding to the first row first row sub-pixel is distributed in described first quartile region;
TFT corresponding to the first row secondary series sub-pixel is distributed in described third quadrant region;
TFT corresponding to second row first row sub-pixel is distributed in described fourth quadrant region;
TFT corresponding to second row secondary series sub-pixel is distributed in described second quadrant area.
3. bore hole 3D 3 d display device according to claim 1, is characterized in that, the TFT being positioned at the sub-pixel of odd-numbered line is all arranged on the first quartile region of the sub-pixel corresponding to it;
The TFT being positioned at the sub-pixel of even number line is all arranged on the second quadrant area of the sub-pixel corresponding to it.
4. bore hole 3D 3 d display device according to claim 1, is characterized in that, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the second subelement;
Wherein, in described second subelement, comprise the TFT of four lines four row sub-pixel;
First row and the TFT corresponding to the 4th row sub-pixel lay respectively at the first quartile region of the sub-pixel corresponding to it;
TFT corresponding to secondary series level the 3rd row sub-pixel lays respectively at the third quadrant region of the sub-pixel corresponding to it.
5. bore hole 3D 3 d display device according to claim 1, is characterized in that, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 3rd subelement;
Wherein, in described second subelement, comprise the TFT of four lines four row sub-pixel;
First row and the TFT corresponding to secondary series sub-pixel lay respectively at the first quartile region of the sub-pixel corresponding to it;
3rd row and the TFT corresponding to the 4th row sub-pixel lay respectively at the third quadrant region of the sub-pixel corresponding to it.
6. bore hole 3D 3 d display device according to claim 1, is characterized in that, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 4th subelement;
Wherein, described 4th subelement comprises the TFT of adjacent two row sub-pixels;
TFT corresponding to first row sub-pixel lays respectively at the first quartile region of the sub-pixel corresponding to it;
TFT corresponding to secondary series sub-pixel lays respectively at the second quadrant area of the sub-pixel corresponding to it.
7. bore hole 3D 3 d display device according to claim 1, is characterized in that, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 5th subelement;
Wherein, described 5th subelement comprises the TFT of adjacent two row sub-pixels;
TFT corresponding to first row sub-pixel lays respectively at the first quartile region of the sub-pixel corresponding to it;
TFT corresponding to secondary series sub-pixel lays respectively at the fourth quadrant region of the sub-pixel corresponding to it.
8. bore hole 3D 3 d display device according to claim 1, is characterized in that, the described TFT corresponding with sub-pixel is according to the arrangement mode repeated arrangement of the 6th subelement;
Wherein, described 6th subelement comprises the TFT of adjacent four row sub-pixels;
TFT corresponding to first row sub-pixel lays respectively at the first quartile region of the sub-pixel corresponding to himself;
TFT corresponding to secondary series sub-pixel lays respectively at the fourth quadrant region of the sub-pixel corresponding to himself;
TFT corresponding to 3rd row sub-pixel lays respectively at the third quadrant region of the sub-pixel corresponding to himself;
TFT corresponding to 4th row sub-pixel lays respectively at the second quadrant area of the sub-pixel corresponding to himself.
9. bore hole 3D 3 d display device according to claim 8, is characterized in that, when have employed H type common electrode in 2D display screen and increasing memory capacitance, comprising:
Transverse electrode in the H type electrode of 2D display screen sub-pixel is according to the arrangement mode repeated arrangement of the first mirror image unit, wherein said first mirror image unit comprises first module and the second unit of mutual specular, wherein said first module comprises the transverse electrode of a row sub-pixel, the transverse electrode of this row sub-pixel line by line after convergence axis of symmetry line by line away from axis of symmetry; Or,
Transverse electrode in the H type electrode of 2D display screen sub-pixel is according to the arrangement mode repeated arrangement of the second mirror image unit, wherein said second mirror image unit comprises Unit the 3rd and Unit the 4th of mutual specular, wherein said Unit the 3rd comprises the transverse electrode of two identical row sub-pixels of distribution form, often row transverse electrode line by line after convergence axis of symmetry line by line away from axis of symmetry; Or,
Transverse electrode in the H type electrode of 2D display screen sub-pixel is according to the arrangement mode repeated arrangement of the 3rd mirror image unit, wherein said 3rd mirror image unit comprises Unit the 5th and Unit the 6th of mutual specular, wherein said Unit the 5th comprises the transverse electrode of two identical row sub-pixels of distribution form, often row transverse electrode convergence axis of symmetry line by line.
10. a Pixel Design method, is characterized in that, comprising: be identical sub-pixel with the sub-pixel of a line in 2D display screen;
Each described sub-pixel is divided into first quartile region, the second quadrant area, third quadrant region and fourth quadrant region according to order from left to right, from top to bottom;
The thin film transistor (TFT) TFT corresponding with each described sub-pixel is separately positioned on the set quadrant area of the sub-pixel corresponding to it;
Corresponding often capable described sub-pixel arranges the sweep trace for control TFT switch respectively, and correspondence often arranges described sub-pixel and arranges for the signal wire for described TFT discharge and recharge respectively;
The described TFT corresponding with each sub-pixel is made to be connected with its contiguous described sweep trace and described signal wire.
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| CN106959483A (en) * | 2017-06-01 | 2017-07-18 | 宁波视睿迪光电有限公司 | A kind of Grating Film and 3 d display device |
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