CN105000882A - Low-inherent-sintering-temperature low-loss-temperature stable microwave dielectric ceramic material - Google Patents
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 19
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 238000000498 ball milling Methods 0.000 claims abstract description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims abstract description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 abstract description 7
- 238000001035 drying Methods 0.000 abstract description 3
- 238000007873 sieving Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003836 solid-state method Methods 0.000 description 1
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Abstract
本发明公开了一种低固有烧结温度低损耗温度稳定型微波介质陶瓷材料,其化学式为0.6MgMoO4+0.4TiO2;先将MgO、MoO3按化学计量式MgMoO4进行配料,球磨后于100~120℃烘干,过筛;再于700~850℃预烧,另将TiO2粉料于800~950℃预烧;将两种粉料按化学计量式0.6MgMoO4+0.4TiO2进行配料,经球磨、烘干、过筛后压制成坯体;坯体于800℃~950℃烧结,制成微波介质陶瓷。本发明的电常数εr为8.17~9.78,品质因数Qf为41585~53557GHz,谐振频率温度系数τf为-75.45~-62.87×10-6/℃的;本发明简化了制备工艺,节省了时间成本和能源成本。The invention discloses a microwave dielectric ceramic material with low inherent sintering temperature, low loss and stable temperature. Its chemical formula is 0.6MgMoO 4 + 0.4TiO 2 ; Dry at ~120°C and sieve; then pre-fire at 700-850°C, and pre-fire TiO 2 powder at 800-950°C; mix the two powders according to the stoichiometric formula 0.6MgMoO 4 +0.4TiO 2 , After ball milling, drying, and sieving, press into a green body; the green body is sintered at 800 ° C to 950 ° C to make microwave dielectric ceramics. The electric constant ε r of the present invention is 8.17-9.78, the quality factor Qf is 41585-53557 GHz, and the temperature coefficient τ f of the resonant frequency is -75.45--62.87×10 -6 /°C; the present invention simplifies the preparation process and saves time costs and energy costs.
Description
技术领域technical field
本发明属于一种以成分为特征的陶瓷组合物,尤其涉及一种以0.6MgMoO4+0.4TiO2为化学式的具有低烧结温度,中介电常数的微波介质陶瓷及其制备方法。The invention belongs to a ceramic composition characterized by components, in particular to a microwave dielectric ceramic with a chemical formula of 0.6MgMoO 4 +0.4TiO 2 , which has a low sintering temperature and a medium dielectric constant and a preparation method thereof.
背景技术Background technique
电子技术伴随着21世纪无线通信技术的飞速发展逐渐步向更微型化、集成化、表面组装化、多维化以及高频化等。低温共烧陶瓷(Low Temperature Co-fired Ceramics,简称LTCC)技术是促进这一发展趋势的关键途径。LTCC技术主要包括以下三个方面:材料、设计、以及工艺与设备。其中材料是生产LTCC器件的基础。对微波介质材料来说,LTCC技术的主要要求如下所示:较低的烧结温度(950℃以下)、合适的介电常数、较低的介质损耗(较高的品质因数Q值)及近零的谐振频率温度系数。With the rapid development of wireless communication technology in the 21st century, electronic technology is gradually moving towards miniaturization, integration, surface assembly, multi-dimensionality and high frequency. Low Temperature Co-fired Ceramics (LTCC) technology is a key way to facilitate this development trend. LTCC technology mainly includes the following three aspects: materials, design, and process and equipment. Among them, the material is the basis for producing LTCC devices. For microwave dielectric materials, the main requirements of LTCC technology are as follows: lower sintering temperature (below 950°C), appropriate dielectric constant, lower dielectric loss (higher quality factor Q value) and near zero The resonant frequency temperature coefficient.
目前大多数具有优异微波介电性能的微波介质陶瓷(如:BaTi4O9,Ba2Ti9O20等)的烧结温度都比较高,一般都在1300℃以上,远远高于Cu、Ag的熔点,难以满足低温共烧的要求。为了降低微波介质陶瓷材料的烧结温度,一般在已有的材料中添加一定量的低熔点氧化物或玻璃等,但对那些固有烧结温度较高的材料而言,往往需要添加大量的低熔点烧结助剂才能降低其烧结温度,而这样会对微波介电性能带来不同程度的损坏,如损耗增大,温度系数增大等,以致于材料的低温化与优异微波介电性能难以兼备。但是对于低固有烧结温度的微波介质陶瓷而言,在烧结过程中由于其固有烧结温度较低,同时也能保持材料优异的微波介电性能。所以,探索新型低固有烧结温度的材料,成为近年来微波介质材料研究的热点。At present, the sintering temperature of most microwave dielectric ceramics with excellent microwave dielectric properties (such as: BaTi 4 O 9 , Ba 2 Ti 9 O 20 , etc.) is relatively high, generally above 1300 ° C, much higher than that of Cu and Ag It is difficult to meet the requirements of low temperature co-firing. In order to reduce the sintering temperature of microwave dielectric ceramic materials, a certain amount of low melting point oxide or glass is generally added to the existing materials, but for those materials with inherently higher sintering temperature, it is often necessary to add a large amount of low melting point sintering Additives can reduce the sintering temperature, which will damage the microwave dielectric properties to varying degrees, such as increased loss, increased temperature coefficient, etc., so that it is difficult to achieve both low temperature and excellent microwave dielectric properties. However, for microwave dielectric ceramics with low intrinsic sintering temperature, the excellent microwave dielectric properties of the material can be maintained at the same time due to the lower intrinsic sintering temperature during the sintering process. Therefore, exploring new materials with low intrinsic sintering temperature has become a hot spot in the research of microwave dielectric materials in recent years.
发明内容Contents of the invention
本发明的目的,是调节低固有烧结温度的MgMoO4微波介质陶瓷的谐振频率温度系数,适应电子信息技术不断向高频化和数字化方向发展的需要。以MgO、MoO3、TiO2为原料,通过简单固相法制备一种具有高品质因数的0.6MgMoO4+0.4TiO2微波介质陶瓷材料。The purpose of the present invention is to adjust the resonant frequency temperature coefficient of MgMoO 4 microwave dielectric ceramics with low intrinsic sintering temperature, so as to meet the needs of the continuous development of electronic information technology in the direction of high frequency and digitalization. Using MgO, MoO 3 , TiO 2 as raw materials, a 0.6MgMoO 4 +0.4TiO 2 microwave dielectric ceramic material with high quality factor was prepared by a simple solid-state method.
本发明通过如下技术方案予以实现。The present invention is realized through the following technical solutions.
一种低固有烧结温度低损耗温度稳定型微波介质陶瓷材料,其化学式为:0.6MgMoO4+0.4TiO2;A low intrinsic sintering temperature, low loss and temperature stable microwave dielectric ceramic material, the chemical formula of which is: 0.6MgMoO 4 +0.4TiO 2 ;
该微波介质陶瓷材料的制备方法,具体实施步骤如下:The preparation method of the microwave dielectric ceramic material, the specific implementation steps are as follows:
(1)将MgO、MoO3按化学计量式MgMoO4进行配料;将粉料放入聚酯罐中,加入去离子水和锆球后,球磨4~8小时;(1) Mix MgO and MoO 3 according to the stoichiometric formula MgMoO 4 ; put the powder into a polyester tank, add deionized water and zirconium balls, and ball mill for 4 to 8 hours;
(2)将步骤(1)球磨后的粉料放入干燥箱中,于100~120℃烘干,然后过40目筛;(2) Put the ball-milled powder in step (1) into a drying oven, dry at 100-120°C, and pass through a 40-mesh sieve;
(3)将步骤(2)烘干、过筛后的粉料放入中温炉中,于700~850℃预烧,保温4~8小时,另将TiO2粉料于800~950℃预烧,保温2~4小时;(3) Put the dried and sieved powder in step (2) into a medium temperature furnace, pre-fire at 700-850°C, keep it warm for 4-8 hours, and pre-fire the TiO2 powder at 800-950°C , keep warm for 2 to 4 hours;
(4)将步骤(3)预烧后的两种粉料按化学计量式0.6MgMoO4+0.4TiO2进行配料,放入球磨罐中,加入氧化锆球和去离子水,球磨9~12小时,烘干后过筛,再用粉末压片机以5~9MPa的压力压制成坯体;(4) Mix the two powders pre-calcined in step (3) according to the stoichiometric formula 0.6MgMoO 4 +0.4TiO 2 , put them into a ball mill jar, add zirconia balls and deionized water, and ball mill for 9 to 12 hours , dried, sieved, and then pressed into a green body with a powder tablet press at a pressure of 5-9 MPa;
(5)将步骤(4)的坯体于800℃~950℃烧结,保温2~8小时,制成低损耗温度稳定型的微波介质陶瓷。(5) Sintering the green body in step (4) at 800° C. to 950° C. and keeping it warm for 2 to 8 hours to produce a low-loss temperature-stable microwave dielectric ceramic.
所述步骤(1)采用行星式球磨机进行球磨,球磨机转速为600转/分。The step (1) adopts a planetary ball mill for ball milling, and the ball mill speed is 600 rpm.
所述步骤(4)的生坯直径为10mm,厚度为5mm。The green body in the step (4) has a diameter of 10mm and a thickness of 5mm.
所述步骤(5)优选的烧结温度为900℃。The preferred sintering temperature of the step (5) is 900°C.
本发明通过简单固相法制备了一种新型的微波介质陶瓷材料0.6MgMoO4+0.4TiO2。其介电常数εr为8.17~9.78,品质因数Qf为41585~53557GHz,谐振频率温度系数τf为-75.45~-62.87×10-6/℃的。本发明简化了制备工艺,节省了时间成本和能源成本。The invention prepares a novel microwave dielectric ceramic material 0.6MgMoO 4 +0.4TiO 2 through a simple solid phase method. Its dielectric constant ε r is 8.17~9.78, quality factor Qf is 41585~53557GHz, and resonant frequency temperature coefficient τ f is -75.45~-62.87×10 -6 /℃. The invention simplifies the preparation process and saves time cost and energy cost.
具体实施方式Detailed ways
本发明以MgO(分析纯)、MoO3(分析纯)、TiO2(分析纯)为初始原料,通过简单固相法制备微波介质陶瓷0.6MgMoO4+0.4TiO2。具体实施步骤如下:The invention uses MgO (analytical pure), MoO 3 (analytical pure) and TiO 2 (analytic pure) as initial raw materials, and prepares microwave dielectric ceramics 0.6MgMoO 4 +0.4TiO 2 through a simple solid phase method. The specific implementation steps are as follows:
1.将MgO、MoO3按化学计量式MgMoO4进行配料,粉料配比为:3.2813g MgO、11.7186g MoO3,将上述粉料混合后放入聚酯罐中,加入200ml去离子水,加入150g的锆球后,在行星式球磨机上球磨6小时,转速为600转/分;1. Mix MgO and MoO 3 according to the stoichiometric formula MgMoO 4 , the powder ratio is: 3.2813g MgO, 11.7186g MoO 3 , mix the above powders and put them into a polyester tank, add 200ml of deionized water, After adding 150g of zirconium balls, ball mill on a planetary ball mill for 6 hours at a speed of 600 rpm;
2.将球磨后的原料置于干燥箱中,于100℃烘干,而后过40目筛;2. Put the ball-milled raw materials in a drying oven, dry them at 100°C, and then pass them through a 40-mesh sieve;
3.将烘干过筛后的粉料放入中温炉,于750℃预烧,保温4小时,另将TiO2于900℃预烧,保温3小时;3. Put the dried and sieved powder into a medium-temperature furnace, pre-fire at 750°C, and keep warm for 4 hours, and pre-burn TiO 2 at 900°C, and keep warm for 3 hours;
4.将步骤3预烧后的两种粉料按化学计量式0.6MgMoO4+0.4TiO2进行配料,放入球磨罐中,加入氧化锆球和去离子水,球磨12小时,烘干后过筛,再用粉末压片机以6MPa的压力压制成坯体;4. Mix the two powders pre-fired in step 3 according to the stoichiometric formula 0.6MgMoO 4 +0.4TiO 2 , put them into a ball mill jar, add zirconia balls and deionized water, ball mill for 12 hours, dry and pass Sieve, and then use a powder tablet press to press into a green body with a pressure of 6MPa;
5.将坯体在800~950℃烧结,保温6小时,制成低损耗温度稳定型的微波介质陶瓷。5. The green body is sintered at 800-950°C and kept for 6 hours to make low-loss and temperature-stable microwave dielectric ceramics.
通过网络分析仪测试所得制品的微波特性。The microwave characteristics of the obtained products were tested by a network analyzer.
本发明具体实施例的相关工艺参数和微波介电性能详见表1。The relevant process parameters and microwave dielectric properties of specific embodiments of the present invention are shown in Table 1.
表1Table 1
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Cited By (4)
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CN106904966A (en) * | 2017-01-23 | 2017-06-30 | 山东科技大学 | Microwave complex phase ceramic Li2MoO4‑TiO2And preparation method thereof |
CN107619277A (en) * | 2017-09-24 | 2018-01-23 | 天津大学 | The low-temperature sintering microwave medium material of Dope nano-power fluxing agent |
CN112830780A (en) * | 2021-01-15 | 2021-05-25 | 华中科技大学 | A kind of regulator, LTCC microwave dielectric material and preparation method thereof |
CN117342870A (en) * | 2023-09-28 | 2024-01-05 | 南方科技大学 | Microwave dielectric ceramic material and preparation method thereof and microwave communication device |
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