CN104993007A - Photoelectric color sensor based on one-dimensional semiconductor nanomaterial and manufacturing method thereof - Google Patents
Photoelectric color sensor based on one-dimensional semiconductor nanomaterial and manufacturing method thereof Download PDFInfo
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The present invention provides a photoelectric color sensor based on a one-dimensional semiconductor nanomaterial and a manufacturing method thereof. The photoelectric color sensor comprises at least two sensor units having different spectral response characteristics, wherein the sensor unit adopts the one-dimensional semiconductor nanomaterial as a light absorbing material and an electrically conducting channel; two ends of the one-dimensional semiconductor nanomaterial are two electrodes made by different metal materials, one metal electrode is made by high-work-function metal such as gold and palladium, and the other metal electrode is made by low-work-function metal such as scandium, yttrium, lanthanum, and aluminum. The one-dimensional semiconductor nanomaterial is perferably a carbon nanotube, external layers of multiwalled carbon nanotubes are stripped and channels with different stripping degrees can have different spectral responses, or the carbon nanotubes with different spectral responses are respectively deposited in different unit regions through a method such as positioning deposition, then the electrode can be manufactured. According to the photoelectric color sensor and the manufacturing method in the present invention, interference in realization of traditional materials can be greatly reduced, and stability and a spectral response range can be improved.
Description
Technical field
The present invention relates to photoelectric color detector, particularly based on One, Dimensional Semiconductor Nano Materials, such as semiconductor carbon nanometer tube, the photoelectric color detector (transducer) of structure, with and preparation method thereof.
Background technology
Photo-detector is widely used in scientific domain and industry, Military Application, comprises monitoring, manufacturing process control, optical communication, biology and detection at military night etc.Photo-detector based on various material is the study hotspot of various countries scientist at present.Based on the Infrared Detectors of the such as bulk semiconductor material such as indium gallium arsenic, antimony cadmium mercury, limit detection performance good under although higher quantum efficiency and low temperature can be realized, and very high detection degree and very fast response speed can be realized, but because technical difficulty is large, complex process, price is higher, is difficult to more large-scale application, and high-performance wide range Infrared Detectors especially at ambient temperature fails better to be realized always.
Along with the development of photoelectric sense technology, from single spectrum detection to multispectral sensing development, thus there is color detector in technical need, the sensing unit (US4677289A) that the detector that namely one group of spectral response is different is formed.Multispectral sensing, relative to single spectrum detection in the past, can obtain the more information of incident light, thus more easily extract feature recognition object.Multispectral sensor has been widely used in the fields such as medical treatment, environmental monitoring, space probation.In addition, third generation infrared detector array proposes the requirement (Rogalski, a.Infrared Phys.Technol.2011,54 (3), 136 – 154) of multispectral sensing.
Carbon nano-tube, as the representative of one dimension semiconductor material, has the excellent properties built required for efficient nano opto-electronic device.As the emerging photoelectric material of one, be expected to deficiencies such as making up existing photoelectric material poor stability, size cannot be reduced.First, semiconductor nano carbon pipe is direct band gap material, has good extinction characteristic.Secondly, carbon nano-tube has high room temperature mobilities, is good conductive pathway material.In addition, carbon nano-tube film has extremely low luminous reflectivity.Its spectral absorption scope covers ultraviolet, as seen to infrared band.Finally the particularly important is, semiconductor carbon nanometer tube has electron type contacting metal scandium (Sc) (the Doping-Free Fabrication of Carbon Nanotube Based BallisticCMOS Devices and Circuits of almost Perfect simultaneously, Z.Y.Zhang, X.L.Liang, S.Wang, K.Yao, Y.F.Hu, Y.Z.Zhu, Q.Chen, W.W.Zhou, Y.Li, Y.G.Yao, J.Zhang, and L.-M.Peng, Nano Letters 7 (12) (2007) 3603) and metallic yttrium (Y) (Y-Contacted High-Performance n-Type Single-Walled Carbon NanotubeField-Effect Transistors:Scaling and Comparison with Sc-Contacted Devices, L.Ding, S.Wang, Z.Y.Zhang, Q.S.Zeng, Z.X.Wang, T.Pei, L.J.Yang, X.L.Liang, J.Shen, Q.Chen, R.L.Cui, Y.Li, and L.-M.Peng, Nano Letters 9 (2009) 4209), and cavity type contacting metal Pd (Ballistic carbonnanotube field-effect transistors, A.Javey, J.Guo, Q.Wang, M.Lundstrom, H.J.Dai, Nature 424 (2003) 654).The ohmic contact adopting different metals to realize electronics and hole is respectively that the high-performance solar cell built based on carbon nano-tube provides guarantee.Adopt Pd and Sc contact electrode successfully to prepare high performance photodiode (Photovoltaic Effects in Asymetrically Contacted CNT Barrier-FreeBipolar Diode respectively at semiconductor carbon nanometer tube two ends, S.Wang, L.H.Zhang, Z.Y.Zhang, L.Ding, Q.S.Zeng, Z.X.Wang, X.L.Liang, M.Gao, J.Shen, H.L.Xu, Q.Chen, R.L.Cui, Y.Li and Lian-Mao Peng, J.Phys.Chem.C 113 (2009) 6891), the photodiode of this structure has good light transfer characteristic.
As the development trend of photoelectric sensor, the realization of color Application in Sensing on this material of carbon nano-tube has realistic meaning.
Summary of the invention
The object of the present invention is to provide a kind of photoelectric color transducer based on One, Dimensional Semiconductor Nano Materials and preparation method thereof, stability and the spectral response range of color sensor can be improved.
Technical scheme of the present invention is as follows:
A kind of photoelectric color transducer, comprise the sensor unit that at least two spectral response characteristics are different, described sensor unit is using One, Dimensional Semiconductor Nano Materials as light absorbent and conductive channel, and the two ends of described One, Dimensional Semiconductor Nano Materials adopt the electrode of metal material not of the same race.
Further, described One, Dimensional Semiconductor Nano Materials preferably adopts carbon nano-tube.
Further, the sensor unit that described spectral response is different can realize by the following method: use semiconductive double-walled or multi-walled carbon nano-tubes, after completing electrode, certain voltage is applied to raceway groove, the skin of double-walled or multi-walled carbon nano-tubes can be made to peel off, and namely the raceway groove that extent of exfoliation is different has different spectral responses.Different photosensitive unit can respond to the different-waveband of incidence the compositional information obtaining incident light respectively.The sensor unit that spectral response is different also can realize by the following method: use semiconductor single wall or double-walled, multi-walled carbon nano-tubes, first by pin deposition method, carbon pipes different for spectral response is deposited on different units region respectively, then makes electrode.
Further, the electrode of described two metal materials not of the same race, one of them metal electrode is made up of high-work-function metals such as gold, palladiums, is called P-type electrode, and another metal electrode is made up of low workfunction metal such as scandium, yttrium, lanthanum, aluminium, is called N-type electrode.
Further, be provided with multiple described One, Dimensional Semiconductor Nano Materials between the electrode of described two metal materials not of the same race, form multiple sensor unit.
Further, described photoelectric color transducer is laminated construction, and every one deck comprises at least one sensor unit, is provided with planarized dielectric and interconnect architecture between each layer.
Further, the wave-length coverage of described spectral response is 300-30000 nanometer.
Further, the size of the whole device of described photoelectric color transducer is 10 nanometer-1 millimeter.
Prepare a method for photoelectric color transducer, it is characterized in that, comprise the steps:
1) the intrinsic semiconductor double-walled be positioned on substrate or multi-walled carbon nano-tubes is obtained;
2) formed the pattern form of electrode on the carbon nanotubes by electron beam exposure or optical exposure method, then adopt film plating process to prepare metal electrode, form the electrode of different metal material at carbon nano-tube two ends;
3) peel off the skin of double-walled or multi-walled carbon nano-tubes, namely the raceway groove that extent of exfoliation is different has different spectral response characteristics, thus obtains the color sensor based on carbon nano-tube making.
Prepare a method for photoelectric color transducer, comprise the steps:
1) by semi-conductive single-walled or double-walleds different for spectral response characteristic, multi-walled carbon nano-tubes pin deposition in the different units region on substrate;
2) formed the pattern form of electrode on the carbon nanotubes by electron beam exposure or optical exposure method, then adopt film plating process to prepare metal electrode, form the electrode of different metal material at carbon nano-tube two ends.
Further, described film plating process can be the methods such as electron beam plated film, magnetron sputtering, hot evaporation.
Further, forming the photoelectric color transducer of refracting films by increasing planarized dielectric, between each layer, being provided with interconnect architecture.
Beneficial effect of the present invention is to propose a kind of color sensor structure based on One, Dimensional Semiconductor Nano Materials and manufacture method.The technique made is simple, without the need to doping, by using the asymmetric contact of carbon nano-tube as photosensitive unit, greatly can reduce the crosstalk in traditional material realization, and improving stability and spectral response range.
Accompanying drawing explanation
Fig. 1 is the structural representation of a carbon nano-tube color sensor, and wherein: 1-carbon nano-tube, 2-N type contacts, and 3-P type contacts, 4-substrate.
Fig. 2 utilizes control to blow to peel off the outer field electric current of multi-walled carbon nano-tubes, voltage curve.
Fig. 3 is the respective spectral response of two photosensitive units and its ratio of a color sensor.
Fig. 4 is the schematic diagram of the another kind of implementation of color sensor, wherein: 1-carbon nano-tube, and 2-N type contact (N-type electrode), 3-P type contact (P-type electrode), 4-substrate.
Fig. 5 is the schematic diagram of the multilayer implementation of color sensor, and wherein: 1-carbon nano-tube, 2-N type contacts, and 3-P type contacts, 4-substrate, 5-planarized dielectric.
Embodiment
Below by embodiment, the present invention is described in further detail, but the scope do not limited the present invention in any way.
Embodiment 1:
Shown in Fig. 1 is the structural representation of the one dimension single-root carbon nano-tube color sensor that the present invention realizes.On semiconductive carbon nano tube 1, take palladium as P-type electrode 3, scandium is N-type electrode 2, and the length of conducting channel and carbon nano-tube 1 is 200 nanometers.
The concrete preparation process of this color sensor is as follows:
1, acquisition is positioned at Si/SiO
2intrinsic semiconductor double-walled carbon nano-tube on substrate;
2, formed the pattern form of palladium electrode on the carbon nanotubes by the method for electron beam exposure, then use electron beam evaporation plating 70 nanometer thickness Metal Palladium electrode, then peel off the unwanted metal level of removal;
3, formed the pattern form of scandium electrode on the carbon nanotubes by the method for electron beam exposure, then electron beam evaporation plating 90 nanometer thickness metal scandium electrode, then peel off the unwanted metal level of removal;
4, the carbon outer tube layer that electric current peels off double-walled carbon nano-tube is added.Namely the raceway groove that extent of exfoliation is different has different spectral responses.
Based on said method, color sensor can be made based on a carbon nano-tube.
Embodiment 2:
Shown in Fig. 4 is the carbon nano-tube color sensor of more polychrome of the present invention, higher response forms, comprises multiple sensor unit, forms array structure.In a sensor unit structure, the two ends as the carbon nano-tube 1 of conductive channel and light absorbent are electrodes that two metal materials not of the same race are made, i.e. N-type electrode 2 and P-type electrode 3.As shown in FIG., between the electrode of two different materials, be provided with multiple carbon nano-tube, namely form multiple sensor unit.
The sensor unit that spectral response is different can realize by the following method: use semi-conductive single-walled or double-walled, multi-walled carbon nano-tubes, respectively by carbon tube material pin deposition different for spectral response on the different units region shown in Fig. 4, then carry out electrode and subsequent technique.In addition, the mode outside pin deposition can be adopted to the making of variety classes probe unit, as etching, covalent modification, control blow, location shifts.
Fig. 2 utilizes control to blow to peel off the outer field electric current of multi-walled carbon nano-tubes, voltage curve.Can find out and there will be precipitous current step after being continuously applied voltage, indicate that carbon outer tube layer is stripped.
Fig. 3 is the respective spectral response of two photosensitive units and its ratio of a color sensor.Ratio refers to the ratio of two unit light electric currents under the irradiation of identical incident light.Wherein comprise spectral content information.Can find out, the spectral response characteristic of two unit is different.
Embodiment 3:
Shown in Fig. 5 is the carbon nano-tube color sensor of a kind of refracting films of the present invention.
Basic structure, as Fig. 5, adopts the form of similar traditional infrared double-color detector here, and the carbon nano-tube film of combination different-diameter distribution realizes the difference of different units spectral response, and unit is here laminate structure.
The making step of the carbon nano-tube color sensor of this refracting films is as follows:
1. be the long-wave response carbon nano-tube material of 3 nanometers at deposited on substrates diameter;
2. make electrode and interconnection line;
3. carry out planarization, as shown in planarized dielectric in figure 5;
4. on the planarized dielectric of step 3 formation, deposited on substrates diameter is wave response carbon tube material in 2 nanometers;
5. make electrode and interconnection line;
6. carry out planarization;
7. on the planarized dielectric of step 6 formation, deposited on substrates diameter is the long-wave response carbon tube material of 1 nanometer;
8. make electrode and interconnection line;
9. carry out planarization;
10. with interconnect architecture between universal standard multilayer wiring technique making layer.
The carbon pipe photoelectric color transducer of large area, high response can be produced thus.
Above embodiment is only in order to illustrate technical scheme of the present invention but not to be limited; those of ordinary skill in the art can modify to technical scheme of the present invention or equivalent replacement; and not departing from the spirit and scope of the present invention, protection scope of the present invention should be as the criterion with described in claims.
Claims (10)
1. a photoelectric color transducer, it is characterized in that, comprise the sensor unit that at least two spectral response characteristics are different, described sensor unit is using One, Dimensional Semiconductor Nano Materials as light absorbent and conductive channel, and the two ends of described One, Dimensional Semiconductor Nano Materials adopt the electrode of metal material not of the same race.
2. photoelectric color transducer as claimed in claim 1, it is characterized in that, described One, Dimensional Semiconductor Nano Materials is carbon nano-tube.
3. photoelectric color transducer as claimed in claim 2, is characterized in that, one of sensor unit employing following manner that described spectral response characteristic is different obtains:
1) by electric current, the skin of semiconductive double-walled or multi-walled carbon nano-tubes is peeled off, namely the raceway groove that extent of exfoliation is different has different spectral responses;
2) use semi-conductive single-walled or double-walled, multi-walled carbon nano-tubes, adopt orientation deposition method that carbon nano-tube different for spectral response is deposited on different units region respectively, then make electrode;
3) employing etching, covalent modification, control are blown or are located transfer method and makes the different sensor unit of spectral response characteristic.
4. photoelectric color transducer as claimed in claim 3, is characterized in that, the electrode of described metal material not of the same race, one of them metal electrode is made up of high-work-function metal, be called P-type electrode, another metal electrode is made up of low workfunction metal, is called N-type electrode; Described high-work-function metal is gold or palladium, and described low workfunction metal is scandium, yttrium, lanthanum or aluminium.
5. the photoelectric color transducer according to any one of Claims 1-4, is characterized in that, is provided with multiple described One, Dimensional Semiconductor Nano Materials, forms multiple sensor unit between the electrode of two metal materials not of the same race.
6. the photoelectric color transducer according to any one of Claims 1-4, is characterized in that, be laminated construction, every one deck comprises at least one sensor unit, is provided with planarized dielectric and interconnect architecture between each layer.
7. the photoelectric color transducer according to any one of Claims 1-4, is characterized in that, the wave-length coverage of described spectral response is 300-30000 nanometer.
8. prepare a method for photoelectric color transducer, it is characterized in that, comprise the steps:
1) the intrinsic semiconductor double-walled be positioned on substrate or multi-walled carbon nano-tubes is obtained;
2) formed the pattern form of electrode on the carbon nanotubes by electron beam exposure or optical exposure method, then adopt film plating process to prepare metal electrode, form the electrode of different metal material at carbon nano-tube two ends;
3) peeled off the skin of double-walled or multi-walled carbon nano-tubes by electric current, namely the raceway groove that extent of exfoliation is different has different spectral response characteristics.
9. prepare a method for photoelectric color transducer, it is characterized in that, comprise the steps:
1) by semi-conductive single-walled or double-walleds different for spectral response characteristic, multi-walled carbon nano-tubes pin deposition in the different units region on substrate;
2) formed the pattern form of electrode on the carbon nanotubes by electron beam exposure or optical exposure method, then adopt film plating process to prepare metal electrode, form the electrode of metal material not of the same race at carbon nano-tube two ends.
10. method as claimed in claim 8 or 9, is characterized in that, forming the photoelectric color transducer of refracting films, being provided with interconnect architecture between each layer by increasing planarized dielectric.
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| CN111599889A (en) * | 2020-05-25 | 2020-08-28 | 华南师范大学 | Self-driven photoelectric detector and optical communication system thereof |
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| JP2003282924A (en) * | 2002-03-25 | 2003-10-03 | Fujitsu Ltd | Photo detector and method of manufacturing the same |
| US20080290437A1 (en) * | 2007-05-23 | 2008-11-27 | Cheon-Man Shim | Image sensor and method for manufacturing the same |
| CN102270673A (en) * | 2011-07-22 | 2011-12-07 | 重庆科技学院 | Multirange photoelectric detector |
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2015
- 2015-06-25 CN CN201510358886.1A patent/CN104993007A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003282924A (en) * | 2002-03-25 | 2003-10-03 | Fujitsu Ltd | Photo detector and method of manufacturing the same |
| US20080290437A1 (en) * | 2007-05-23 | 2008-11-27 | Cheon-Man Shim | Image sensor and method for manufacturing the same |
| CN102270673A (en) * | 2011-07-22 | 2011-12-07 | 重庆科技学院 | Multirange photoelectric detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111599889A (en) * | 2020-05-25 | 2020-08-28 | 华南师范大学 | Self-driven photoelectric detector and optical communication system thereof |
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