CN104990537A - Inclinometer sensing head structure, and making technology and signal processing circuit thereof - Google Patents

Inclinometer sensing head structure, and making technology and signal processing circuit thereof Download PDF

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Publication number
CN104990537A
CN104990537A CN201510463225.5A CN201510463225A CN104990537A CN 104990537 A CN104990537 A CN 104990537A CN 201510463225 A CN201510463225 A CN 201510463225A CN 104990537 A CN104990537 A CN 104990537A
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beryllium
bronze
sensing head
head structure
copper
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王宏伟
黄旭
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Beijing Information Science and Technology University
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Beijing Information Science and Technology University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C9/00—Measuring inclination, e.g. by clinometers, by levels

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

The invention discloses an inclinometer sensing head structure, and a making technology and a signal processing circuit thereof. The inclinometer sensing head structure comprises: a beryllium bronze vibration element arranged on the interlayer of the sensing head structure and comprising a beryllium bronze outline frame, a beryllium bronze elastic beam and a beryllium bronze mass block, wherein the beryllium bronze mass block is connected with the beryllium bronze outline frame through the beryllium bronze elastic beam; and bronze-coated organic plates respectively arranged at the upper layer and the lower layer of the vibration element, wherein a position of the lower surface of the upper layer organic plate facing the beryllium bronze mass block and a position of the upper surface of the lower layer organic plate facing the beryllium bronze mass block are respectively coated with a bronze layer, and a gap is residual between each of the upper layer organic plate and the lower layer organic plate and the beryllium bronze mass block. The inclinometer sensing head structure has good stability and small size, can be used in an automatic control system, allows interference to be eliminated through differential capacity, is slightly affected by the temperature and has high sensitivity, and the making technology of the structure is simple.

Description

Obliquity sensor sensing head structure, manufacture craft and signal processing circuit thereof
Technical field
The present invention relates to automatic field, in particular to a kind of obliquity sensor sensing head structure, manufacture craft and signal processing circuit thereof.
Background technology
Inclinator has wide application in fields such as earthquake, military affairs, ocean, building, agricultural and electronic products.
In correlation technique, mercury bead horizon equipment or liquid pendulum-type obliquity sensor is usually adopted to carry out measurement of dip angle.But above-mentioned apparatus measures scope is little, the stably measured time is longer, inconvenient kinetic measurement, can not be used for automatic control system.The obliquity sensor of the principle development utilizing solid to put can acquire comparatively high measurement accuracy, but sensor bulk is comparatively large and shock resistance is poor.
Therefore, designing a kind of good stability, compact, and may be used for the obliquity sensor of automatic control system, is current problem demanding prompt solution.
Summary of the invention
Fundamental purpose of the present invention is open a kind of obliquity sensor sensing head structure, manufacture craft and signal processing circuit thereof, and to solve in correlation technique, to go back deficient in stability good, compact, and the problem that may be used for the obliquity sensor of automatic control system.
According to an aspect of the present invention, a kind of obliquity sensor sensing head structure is provided.
Obliquity sensor sensing head structure according to the present invention comprises: beryllium copper vibrating elements, be arranged at the middle layer of described sensing head structure, comprise: beryllium-bronze housing, beryllium-bronze elastic beam, beryllium-bronze mass, wherein, described beryllium-bronze mass is connected with described beryllium-bronze housing by described beryllium-bronze elastic beam; Apply copper organic plates, be arranged at the upper and lower of described beryllium copper vibrating elements respectively, wherein, the position that the upper surface of the position that the lower surface of upper strata organic plates is relative with described beryllium-bronze mass and lower floor's organic plates is relative with described beryllium-bronze mass, all be covered with layers of copper, and described upper strata organic plates and described lower floor organic plates leave gap respectively and between described beryllium-bronze mass.
According to a further aspect in the invention, a kind of signal processing circuit of obliquity sensor sensing head structure is provided.
Signal processing circuit according to obliquity sensor sensing head structure of the present invention comprises: for the stabilized voltage supply of powering; Pulse generating circuit, is connected with described stabilized voltage supply, for exporting periodic square wave; Capacitance voltage translation circuit, be connected with described pulse generating circuit, comprise: sensing head structure, wherein, the upper strata organic plates copper-clad of described sensing head structure and the contact conductor of lower floor's organic plates copper-clad welding are connected to the positive-negative input end of operational amplifier in differential amplifier circuit respectively, the contact conductor ground connection that the beryllium copper vibrating elements of described sensing head structure welds; Described differential amplifier circuit, is connected with described capacitance voltage translation circuit, amplifies for the voltage exported by described capacitance voltage translation circuit.
According to another aspect of the invention, a kind of manufacture craft of obliquity sensor sensing head structure is provided.
Manufacture craft according to obliquity sensor sensing head structure of the present invention comprises: by salpeter solution concentration adjustment to predetermined concentration, the beryllium-bronze after mask is put into the salpeter solution configured and carries out corroding the sensing head structure to needing; The corrosion prevention film of deposited copper organic plates band pole plate domain is covered, put into ferric chloride solution and corrode, the described deposited copper organic plates after corrosion is cut, and welding electrode goes between on copper-clad; Between described deposited copper organic plates and the beryllium-bronze housing of described sensing head structure, bond insulating cell circle to make to be formed between beryllium-bronze oscillating mass and described deposited copper organic plates the gap of pre-sizing, after adhesive glue solidifies, on beryllium-bronze mass, welding electrode goes between.
Compared with prior art, the embodiment of the present invention at least has the following advantages: due to beryllium-bronze material good springiness, and density is large, endurance, is suitable for doing inertia vibrating elements.Adopt beryllium-bronze material as vibrating elements, in conjunction with " sandwich " formula differential capacitor detection architecture, the obliquity sensor designed and produced, good stability, compact, and may be used for automatic control system, and differential capacitor can eliminate interference, and temperature influence is little, highly sensitive, structure fabrication processes is simple.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the obliquity sensor sensing head structure according to the embodiment of the present invention;
Fig. 2 is the structured flowchart of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention;
Fig. 3 is the schematic diagram of the stabilized voltage supply of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention;
Fig. 4 is the schematic diagram of the pulse generating circuit of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention;
Fig. 5 is the schematic diagram of the capacitance voltage translation circuit of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention;
Fig. 6 is the schematic diagram of the differential amplifier circuit of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention;
Fig. 7 is the process flow diagram of the manufacture craft of obliquity sensor sensing head structure according to the embodiment of the present invention.
Embodiment
Below in conjunction with Figure of description, specific implementation of the present invention is made a detailed description.
According to the embodiment of the present invention, provide a kind of obliquity sensor sensing head structure.
Fig. 1 is the schematic diagram of the obliquity sensor sensing head structure according to the embodiment of the present invention.As shown in Figure 1, this obliquity sensor sensing head structure comprises:
Beryllium copper vibrating elements 10, is arranged at the middle layer of described sensing head structure, comprises: beryllium-bronze housing 100, beryllium-bronze elastic beam 101, beryllium-bronze mass 102, wherein, described beryllium-bronze mass 102 is connected with described beryllium-bronze housing 100 by described beryllium-bronze elastic beam 101;
Apply copper organic plates 12, be arranged at the upper and lower of described beryllium copper vibrating elements respectively, wherein, the position that the upper surface of the position that the lower surface of upper strata organic plates 120 is relative with described beryllium-bronze mass and lower floor's organic plates 121 is relative with described beryllium-bronze mass, all be covered with layers of copper 122, and described upper strata organic plates 120 and described lower floor organic plates 121 leave gap respectively and between described beryllium-bronze mass 102.
As can be seen here, between beryllium-bronze mass and upper bottom crown, all there is gap, form electric capacity C1 and C2, when sensor run-off the straight, beryllium-bronze mass just produces and departs from direction, causes two electric capacity that change relatively occurs, measure the size of capacitance variations, just can obtain the size at inclination angle.Due to beryllium-bronze material good springiness, density is large, endurance, is suitable for doing inertia vibrating elements.Adopt beryllium-bronze material as vibrating elements, in conjunction with " sandwich " formula differential capacitor detection architecture, the obliquity sensor designed and produced, good stability, compact, and may be used for automatic control system, and differential capacitor can eliminate interference, and temperature influence is little, highly sensitive, structure fabrication processes is simple.
Wherein, described upper strata organic plates 120 copper-clad is welded with contact conductor, and described lower floor organic plates 121 copper-clad is welded with contact conductor, and described vibrating elements is welded with contact conductor.Like this, the beryllium copper vibrating elements of levels organic plates and centre is welded with three contact conductors altogether.
By above-mentioned contact conductor, above-mentioned obliquity sensor sensing head structure is formed signal processing circuit in conjunction with other components and parts, the change of differential capacitor is converted into voltage, according to the size measuring the voltage determination sensorless tilt obtained.
In preferred implementation process, between the beryllium copper mass of the beryllium-bronze vibrating elements in middle layer and left and right pole plate, there is gap, form electric capacity C1 and C2.For two plane-parallel capacitors, the large I of its electric capacity is determined by following formula:
C＝εS/d
Wherein, S is two plate area coverages of electric capacity, and d is the spacing of two plates.Can see that the change of capacitance size can be realized by two kinds of approach, area changes and spacing changes.
Electric capacity C1 and C2 formed between beryllium copper mass and left and right pole plate, because angle of inclination difference can change the spacing between beryllium copper mass and left and right pole plate.So just change C1, the size of C2.Again the change of this electric capacity is converted to voltage by signal processing circuit, the voltage according to exporting determines inclination angle size.
Wherein, between described upper strata organic plates and described beryllium-bronze housing, and be all bonded with insulating cell circle between described lower floor organic plates and described beryllium-bronze housing, vibrate the effect in gap with satisfied insulation and adjustment.
Bond insulating cell circle between deposited copper organic plates and beryllium-bronze housing, it is the gap in order to make to be formed between beryllium-bronze oscillating mass and deposited copper organic plates pre-sizing, preferably, described upper strata organic plates and described lower floor organic plates respectively and the gap left between described beryllium-bronze mass be 500 μm.
The capacitance type sensor adopting beryllium-bronze material to make has the following advantages: (1) impedance is very high, and power is extremely low, and thus required power input is little, and input energy is also less demanding.(2) good temperature stability.Capacitive sensor structure is fairly simple comparatively speaking, and is easily produced, and easily ensures high-precision advantage.Capacitance type sensor is normally by metal electrode, and therefore it can be operated in extreme temperature, and can in high radiation and strong magnetic field circumstance, when greatly can stand temperature variation, high pressure resistant, shock-resistant, overload; Also can UHV (ultra-high voltage) and comparatively low voltage difference time measure, can also magnetic element be measured.(3) structure is very simple and adaptable, and testee can be conductor also can be semiconductor, can be operated among any rugged environment.Capacitance type sensor, the electrostatic attraction between two-plate is little, and required energy is also very little, and its moving part shape can be very little, very thin, and quality also can be very light, and therefore natural vibration frequency is very high, and dynamic response required time is also very short.It also can be used for fast-changing parameter measurement, the measurement such as vibrated, the measurement of instantaneous pressure.(4) fast dynamic response, automatic heating impact little, highly sensitive, error is relatively little.(5) to working environment not too large demand, can work too under rugged environment.
According to the embodiment of the present invention, provide a kind of signal processing circuit of obliquity sensor sensing head structure.
Fig. 2 is the structured flowchart of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention.As shown in Figure 2, this signal processing circuit comprises: for the stabilized voltage supply 20 of powering; Pulse generating circuit 21, is connected with described stabilized voltage supply, for exporting periodic square wave; Capacitance voltage translation circuit 22, be connected with described pulse generating circuit, comprise: sensing head structure, wherein, in the upper strata organic plates of described sensing head structure, in copper-clad and lower floor's organic plates, the contact conductor of copper-clad welding is connected to the positive-negative input end of operational amplifier in differential amplifier circuit respectively, the contact conductor ground connection that the vibrating elements of described sensing head structure welds; Described differential amplifier circuit 23, is connected with described capacitance voltage translation circuit, amplifies for the voltage exported by described capacitance voltage translation circuit.
As can be seen here, Fig. 2 provides a kind of signal processing circuit of differential capacitor sensitive sensor.In this signal processing circuit, the change of the differential capacitor of obliquity sensor sensing head structure is converted into voltage by capacitance voltage translation circuit, and thus according to measuring the size of voltage determination sensorless tilt obtained, circuit design simply and easily realize.
Above-mentioned signal processing circuit is further described below in conjunction with Fig. 3 to Fig. 6.
Fig. 3 is the schematic diagram of the stabilized voltage supply of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention.As shown in Figure 3, this stabilized voltage supply is the REF-02 that ANALOG DEVICE company produces, and it can accurately provide 5V voltage, is with temperature to export simultaneously.The temperature coefficient of REF-02 is 8.5ppm/ DEG C (max) (2ppm/ DEG C (type)), therefore temperature stability is better.This voltage source price is low, noise is low, power is low, and exports with temperature.Electric capacity in Fig. 3 is in circuit in order to further burning voltage.
Fig. 4 is the schematic diagram of the pulse generating circuit of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention.As shown in Figure 4, this pulse generating circuit comprises: Schmidt trigger, the first resistance (R in figure 1), and the first electric capacity (C in figure 1), wherein, described first resistance C 1between the input end being connected to described Schmidt trigger and output terminal, between the input end that described first electric capacity is connected to described Schmidt trigger and ground.Because Schmidt trigger is when input voltage reaches certain value, be just turned to duty from stationary state, and after input voltage drops to certain value, be turned to stationary state from duty again, add R 1feedback and C 1discharge and recharge, finally export periodic square wave.
Fig. 5 is the schematic diagram of the capacitance voltage translation circuit of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention.As shown in Figure 5, this capacitance voltage translation circuit comprises: the mass of described upper strata organic plates copper-clad and described sensing head structure forms the first differential capacitor C s1, the mass of described lower floor organic plates copper-clad and described sensing head structure forms the second differential capacitor C s2; First diode D 1and the second diode D 2, the second resistance R 2and the 3rd resistance R 3; Wherein, described first diode D 1with the second resistance R 2with described first differential capacitor C after being connected in parallel s1be connected in series between described pulse generating circuit output terminal and ground, described second diode D 2with the 3rd resistance R 3with described second differential capacitor C after being connected in parallel s2be connected in series between described pulse generating circuit output terminal and ground, described first diode D 1and the second diode D 2negative pole and described pulse generating circuit output terminal Ugen link together.
Fig. 6 is the schematic diagram of the differential amplifier circuit of the signal processing circuit of obliquity sensor sensing head structure according to the embodiment of the present invention.As shown in Figure 6, this differential amplifier circuit comprises: operational amplifier A D620, the 4th resistance R 4, the 5th resistance R 5, the 6th resistance R 6, the second electric capacity C 2, the 3rd electric capacity C 3, wherein, the positive-negative input end of described AD620 is respectively by described 4th resistance R 4with described 5th resistance R 5the contact conductor welded with described copper-clad is connected, and is connected to described second electric capacity C between the positive-negative input end of described AD620 and ground 2with described 3rd electric capacity C 3, the R of described AD620 gdescribed 6th resistance R is connected with between pin 6.Wherein, differential amplification is realized by AD620, and its inner structure is actually the instrument amplifier be made up of three operational amplifiers, and its enlargement factor is by R 6size determines.
Below further describe the principle of work of foregoing circuit.
Pulse producer produces a frequency by R 1and C 1the rectangle determined, pulse voltage U gen, its high voltage is+5V, and low-voltage is 0V, and sensor scale-up factor is proportional to amplitude U gen.
Variable voltage U genbe added on electric bridge, the two-arm above of electric bridge is resistance R 2, R 3and D 1, D 2parallel connection, below two-arm be pickoff signals capacitor C s1and C s2, electric current passes through R 2, R 3to capacitor C s1and C s2charging, also passes through backward dioded certainly.But, little by the electric current of diode, in practical situations both, can ignore, particularly consider that the output signal of device can not be subject to the impact of the absolute value of inverse current, and only relevant with their difference.Like this, capacitor C s1and C s2the voltage of pickup is pulse voltage U sens.
At t=0 ~ T 1(U gen=5V) time, the voltage U of capacitor pickup sensdepend on the value of capacitor, and at t=T 1~ T (U gen=0V) time, voltage is determined by the characteristic of diode, can be considered as 0.
Analyze charging and discharging process respectively below, and obtain the relation of output signal and capacitance variations.
In charging process, i.e. kT≤t≤kT+T 1
Obtained by Kirchhoff's law:
IR 2 + U C s e n s 1 = U m I - C S 1 dU C s e n s 1 d t = 0 - - - ( 1 )
(1) in formula, U mfor pumping signal U genamplitude, U sens1for capacitor C s1voltage, I is for flowing through R 1electric current, as shown in Figure 4.Solve an equation (1) obtain:
U a = U m ( 1 - e - t R 2 C S 1 ) - - - ( 2 )
In like manner:
U b = U m ( 1 - e - t R 3 C S 2 ) - - - ( 3 )
In discharge process, namely
kT+T 1≤t≤(k+1)T k＝0,±1,±2…，
Because the forward conduction resistance of diode is very little, capacitor C s1electric charge be 0 by the D1 abrupt release of diode, so U a=0.
The flip-flop that electric bridge exports piezoelectricity at a end is:
U ‾ a = 1 T ∫ 0 T 1 U a d t = U m T [ T 1 - R 2 C S 1 ( 1 - e - T 1 R 2 C S 1 ) ] - - - ( 4 )
Consider the practical structures of sensing head, if C s1=C 0-Δ C, C s2=C 0+ Δ C,
Wherein, C 0for the natural capacity of sensing head when not stressing between pole plate, Δ C be stressed after capacitance change, due to
Δ C " C 0, so C s1=C 0-Δ C ≈ C 0, therefore
U ‾ a ≈ U m T [ T 1 - R 2 ( C 0 - Δ C ) ( 1 - e - T 1 R 2 C 0 ) ] - - - ( 5 )
In like manner:
U ‾ b ≈ U m T [ T 1 - R 3 ( C 0 + Δ C ) ( 1 - e - T 1 R 3 C 0 ) ] - - - ( 6 )
Get R2=R3, then
U ‾ a b ≈ U ‾ a - U ‾ b = 2 U m R 2 T ( 1 - e - T 1 R 2 C 0 ) · Δ C - - - ( 7 )
Amplifier AD620 is expressed as after amplifying the magnitude of voltage exported by electric bridge:
U o u t = G U ‾ a b - - - ( 8 )
Wherein G is the enlargement factor of AD620, G=49.4k Ω/R 6+ 1, as shown in Figure 5.
(8) formula is expressed as further:
U out＝KΔC (9)
Can obtain thus K = 2 U m R 2 T ( 1 - e - T 1 R 2 C 0 ) · G - - - ( 10 )
Due to R 2, R 3, R 6, R 1, C 1be selected, G is constant, T and T 1the R be connected with it by pulse producer 1, C 1determining, is fixed value, pumping signal U genamplitude U mdetermined by REF-02, therefore K is constant.The size of output signal and capacitance variations is directly proportional, and K is the scale-up factor of output signal to capacitance variations.
According to the embodiment of the present invention, additionally provide a kind of manufacture craft of obliquity sensor sensing head structure.
Fig. 7 is the process flow diagram of the manufacture craft of obliquity sensor sensing head structure according to the embodiment of the present invention.As shown in Figure 7, the manufacture craft of this obliquity sensor sensing head structure comprises:
Step S701: by salpeter solution concentration adjustment to predetermined concentration, puts into the salpeter solution configured and carries out corroding the sensing head structure to needing by the beryllium-bronze after mask;
Step S702: the corrosion prevention film of deposited copper organic plates band pole plate domain is covered, put into ferric chloride solution and corrode, the described deposited copper organic plates after corrosion is cut, and welding electrode goes between on copper-clad;
Step S703: the insulating cell circle that bonds between described deposited copper organic plates and the beryllium-bronze housing of described sensing head structure is to make to be formed between beryllium-bronze oscillating mass and described deposited copper organic plates the gap of pre-sizing, and welding electrode goes between on beryllium-bronze mass after adhesive glue solidifies.
It should be noted that, above-mentioned steps S701 and step S702 is priority execution sequence not, namely can first perform step S701 and perform step S702 again, also can first perform step S702 and perform step S701 again, or performs step S701 and step S702 simultaneously.
In preferred implementation process, above-mentioned steps S701 may further include following process: usually at room temperature, the beryllium-bronze after mask is put into the salpeter solution configured and corrodes, and obtains the beryllium-bronze structure after corroding; Adopt another mask the beryllium-bronze construction packages after corrosion, only exposed beryllium-bronze elastic beam position, again puts into described salpeter solution and corrodes, and controls the thickness of described beryllium-bronze elastic beam, until obtain the sensing head structure of described needs.Thickness due to beryllium-bronze elastic beam is less than beryllium-bronze housing and beryllium-bronze mass, so carry out corrosion processing to the other mask set of beryllium-bronze elastic beam.
In sum, by above-described embodiment provided by the invention, utilize the resilient characteristic that beryllium-bronze material is excellent, manufacture vibrating elements, and upper and lower electrode forms " sandwich " structure, form capacitance-sensitive formula obliquity sensor sensing head.Circuit and sensing head are combined, the change of the differential capacitor of obliquity sensor sensing head structure is converted into voltage, thus according to the size measuring the voltage determination sensorless tilt obtained.This obliquity sensor, good stability, compact, and may be used for automatic control system, and differential capacitor can eliminate interference, and temperature influence is little, and highly sensitive, structure fabrication processes is simple.
Be only several specific embodiment of the present invention above, but the present invention is not limited thereto, the changes that any person skilled in the art can think of all should fall into protection scope of the present invention.

Claims (10)

1. an obliquity sensor sensing head structure, is characterized in that, comprising:
Beryllium copper vibrating elements, is arranged at the middle layer of described sensing head structure, comprises: beryllium-bronze housing, beryllium-bronze elastic beam, beryllium-bronze mass, and wherein, described beryllium-bronze mass is connected with described beryllium-bronze housing by described beryllium-bronze elastic beam;
Apply copper organic plates, be arranged at the upper and lower of described beryllium copper vibrating elements respectively, wherein, the position that the upper surface of the position that the lower surface of upper strata organic plates is relative with described beryllium-bronze mass and lower floor's organic plates is relative with described beryllium-bronze mass, all be covered with layers of copper, and described upper strata organic plates and described lower floor organic plates leave gap respectively and between described beryllium-bronze mass.
2. obliquity sensor sensing head structure according to claim 1, is characterized in that,
In the organic plates of described upper strata, copper-clad is welded with a contact conductor, and in described lower floor organic plates, copper-clad is welded with a contact conductor, described beryllium copper vibrating elements is welded with a contact conductor.
3. obliquity sensor sensing head structure according to claim 1, is characterized in that,
Between described upper strata organic plates and described beryllium-bronze housing, and be all bonded with insulating cell circle between described lower floor organic plates and described beryllium-bronze housing.
4. obliquity sensor sensing head structure according to claim 1, is characterized in that,
Described upper strata organic plates and described lower floor organic plates respectively and the described gap left between described beryllium-bronze mass be 500 μm.
5. a signal processing circuit for obliquity sensor sensing head structure according to any one of claim 1 to 4, is characterized in that, comprising:
For the stabilized voltage supply of powering;
Pulse generating circuit, is connected with described stabilized voltage supply, for exporting periodic square wave;
Capacitance voltage translation circuit, be connected with described pulse generating circuit, comprise: sensing head structure, wherein, in the upper strata organic plates of described sensing head structure, in copper-clad and lower floor's organic plates, the contact conductor of copper-clad welding is connected to the positive-negative input end of operational amplifier in differential amplifier circuit respectively, the contact conductor ground connection that the beryllium copper vibrating elements of described sensing head structure welds;
Described differential amplifier circuit, is connected with described capacitance voltage translation circuit, amplifies for the voltage exported by described capacitance voltage translation circuit.
6. signal processing circuit according to claim 5, it is characterized in that, described pulse generating circuit comprises: Schmidt trigger, the first resistance, with the first electric capacity, wherein, between the input end that described first resistance is connected to described Schmidt trigger and output terminal, between the input end that described first electric capacity is connected to described Schmidt trigger and ground.
7. signal processing circuit according to claim 5, is characterized in that, comprising:
The first differential capacitor that the mass of described upper strata organic plates copper-clad and described sensing head structure is formed, the mass of described lower floor organic plates copper-clad and described sensing head structure forms the second differential capacitor, first diode and the second diode, the second resistance and the 3rd resistance;
Wherein, described first diode and the second resistor coupled in parallel connect afterwards and described first differential capacitor is connected in series between described pulse generating circuit output terminal and ground, described second diode and the 3rd resistor coupled in parallel connect afterwards and described second differential capacitor is connected in series between described pulse generating circuit output terminal and ground, and negative pole and the described pulse generating circuit output terminal of described first diode and the second diode link together.
8. signal processing circuit according to claim 5, it is characterized in that, described differential amplifier circuit comprises: operational amplifier A D620, the 4th resistance, the 5th resistance, the 6th resistance, the second electric capacity, the 3rd electric capacity, wherein, the positive-negative input end of described AD620 is connected with the contact conductor that described copper-clad welds with described 5th resistance respectively by described 4th resistance, described second electric capacity and described 3rd electric capacity is connected to, the R of described AD620 between the positive-negative input end of described AD620 and ground gdescribed 6th resistance is connected with between pin.
9. the manufacture craft of obliquity sensor sensing head structure according to any one of Claims 1-4, is characterized in that, comprising:
By salpeter solution concentration adjustment to predetermined concentration, the beryllium-bronze after mask is put into the salpeter solution configured and carry out corroding the sensing head structure to needing;
The corrosion prevention film of deposited copper organic plates band pole plate domain is covered, put into ferric chloride solution and corrode, the described deposited copper organic plates after corrosion is cut, and welding electrode goes between on copper-clad;
Between described deposited copper organic plates and the beryllium-bronze housing of described sensing head structure, bond insulating cell circle to make to be formed between beryllium-bronze oscillating mass and described deposited copper organic plates the gap of pre-sizing, after adhesive glue solidifies, on beryllium-bronze mass, welding electrode goes between.
10. manufacture craft according to claim 9, is characterized in that, the beryllium-bronze after mask is put into the salpeter solution configured carry out corrode to need sensing head structure comprise:
Beryllium-bronze after mask is put into the salpeter solution configured corrode, obtain the beryllium-bronze structure after corroding;
Adopt another mask the beryllium-bronze construction packages after corrosion, only exposed beryllium-bronze elastic beam position, again puts into described salpeter solution and corrodes, and controls the thickness of described beryllium-bronze elastic beam, until obtain the sensing head structure of described needs.
CN201510463225.5A 2015-07-31 2015-07-31 Inclinometer sensing head structure, and making technology and signal processing circuit thereof Pending CN104990537A (en)

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CN109682523A (en) * 2019-02-20 2019-04-26 天津师范大学 Optical fibre grating acceleration sensor and application for the measurement of stem slamming load

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Application publication date: 20151021