CN104979327A - Semiconductor element - Google Patents
Semiconductor element Download PDFInfo
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- CN104979327A CN104979327A CN201410136060.6A CN201410136060A CN104979327A CN 104979327 A CN104979327 A CN 104979327A CN 201410136060 A CN201410136060 A CN 201410136060A CN 104979327 A CN104979327 A CN 104979327A
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- interconnection structure
- semiconductor element
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Abstract
A semiconductor element provide by the present invention comprises at least one chip, a cutting path, a protection ring, a crack stop ring and an interconnection structure. The cutting path surrounds the chip, the protection ring is configured between the chip and the cutting path and possesses at least one opening, the crack stop ring is configured between the cutting path and the protection ring and is communicated with the opening, and the interconnection structure penetrates the opening of the protection ring and is connected with an internal element in the chip and an external element in the cutting path, wherein the interconnection structure is formed by stacking a plurality of metal layers and a plurality of conductive plugs alternatively.
Description
Technical field
The invention relates to a kind of integrated circuit, and relate to a kind of semiconductor element especially.
Background technology
Along with the evolution of integrated circuit technique, in order to reduce the size of chip (chip), increasing detection welding pad (test pad) is moved to Cutting Road (scribe line).But once detection welding pad is moved to Cutting Road, degree of difficulty inside chip signal being connected to outer pad also can improve.
Known way utilizes the metal level of the superiors and the oxide skin(coating) of bulk to make interconnection structure.But, along Cutting Road by the process of multiple chip cutting, many irregular cracks or be full of cracks can be produced, and can split along oxide skin(coating) and destroy the inner member of chip in these cracks, cause the usefulness of chip to reduce.
Summary of the invention
In view of this, the invention provides a kind of semiconductor element, the composition of its interconnection structure is based on metal level and conductive plunger, but not known bulk oxide, therefore can avoid the problem of the inner member of be full of cracks or the Crack failure chip produced when cutting.
The invention provides a kind of semiconductor element, it comprises stop ring and interconnection structure at least one chip, Cutting Road, guard ring, crack.Cutting Road is around chip.Guard ring to be configured between described chip and described Cutting Road and to have at least one opening.In crack, stop ring is configured between described Cutting Road and described guard ring, and in described crack, stop ring communicates with described opening.Interconnection structure is through the described opening of described guard ring and the inner member connected in described chip and the outer member in described Cutting Road, and wherein said interconnection structure replaces stacking forming by multiple metal level and multiple conductive plunger.
In one embodiment of this invention, above-mentioned interconnection structure is to the distance increasing or decreasing of the sidewall of described opening.
In one embodiment of this invention, above-mentioned interconnection structure comprises main part through opening and at least one extension, and described extending part is in the side of described opening and be connected with described main part.
In one embodiment of this invention, aforementioned body portion is identical to the distance of the sidewall of described opening.
In one embodiment of this invention, the bearing of trend in aforementioned body portion is different from the bearing of trend of described extension.
In one embodiment of this invention, the bearing of trend in aforementioned body portion is vertical with the bearing of trend of described extension.
In one embodiment of this invention, the shape of above-mentioned interconnection structure is linearity, T-shaped, H type or stepped.
In one embodiment of this invention, the composition of above-mentioned interconnection structure is identical with the composition of described guard ring.
In one embodiment of this invention, above-mentioned inner member comprises interior bond pad.
In one embodiment of this invention, said external element comprises outer pad or detection welding pad.
Based on above-mentioned, in interconnection structure of the present invention, in X-direction and Y-direction, all replace known bulk oxide with metal level and conductive plunger, the be full of cracks produced when therefore effectively can stop cutting or crack penetrate into the problem of active region in chip.Thus, significantly can improve the usefulness of chip, increase competitiveness.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate appended accompanying drawing to be described in detail below.
Accompanying drawing explanation
Figure 1A is the upper schematic diagram of a kind of semiconductor element according to one embodiment of the invention.
Figure 1B and Fig. 1 C is respectively along the A-A ' line of Figure 1A and the generalized section of B-B ' line.
Fig. 2 is the upper schematic diagram of a kind of semiconductor element according to another embodiment of the present invention.
Fig. 3 is the upper schematic diagram of a kind of semiconductor element according to another embodiment of the present invention.
Fig. 4 is the upper schematic diagram of a kind of semiconductor element according to one more embodiment of the present invention.
Wherein, description of reference numerals is as follows:
10,20,30,40: semiconductor element
100: chip
102: Cutting Road
104: guard ring
105: opening
106: stop ring in crack
108,208,308,408: interconnection structure
108a, 208a: main part
108b, 108c, 208b: extension
110: inner member
112: outer member
CP1, CP2, CP3: conductive plunger
M1, M2, M3, TM1, TM2: metal level
OX1, OX2, OX3: oxide
S: substrate
STI: shallow slot isolation structure
Embodiment
Figure 1A is the upper schematic diagram of a kind of semiconductor element according to one embodiment of the invention.Figure 1B and Fig. 1 C is respectively along the A-A ' line of Figure 1A and the generalized section of B-B ' line.
Please refer to Figure 1A, Figure 1B and 1C, semiconductor element 10 of the present invention has multiple chip 100, and separates with Cutting Road 102 between chip 100, can form independently chip after dicing.With the chip 100 in left side, it is described at this, wherein Cutting Road 102 is around chip 100, and other chip 100 also has similar structure.
Semiconductor element 10 of the present invention more comprises stop ring (crack stop ring) 106 and multiple interconnection structure (interconnectionstructure) 108 in multiple guard ring (protection ring) 104, multiple crack.
At least one guard ring 104 to be configured between each chip 100 and corresponding Cutting Road 102 and to have at least one opening 105.Each guard ring 104 replaces stacking forming by multiple metal level and multiple conductive plunger.The material of metal level comprises copper, aluminium or its alloy etc.The material of conductive plunger comprises tungsten, copper, titanium, tantalum, titanium nitride or tantalum nitride etc.In Figure 1A, Figure 1B and Fig. 1 C, each guard ring 104 has two openings 105 and comprises three-layer metal layer M1 ~ M3 and three the alternately stacking conductive plunger CP1 ~ CP3 be positioned in substrate S separately, but the present invention is not as limit.In other words, the present invention does not limit the quantity of opening, metal level, conductive plunger.In one embodiment, in guard ring 104, the both sides of each conductive plunger are configured with oxide layer.The material of oxide layer comprises silica etc.More specifically, as shown in Figure 1 C, the both sides of strips of conductive connector CP1 are configured with two strip oxide layer OX1, and the both sides of strips of conductive connector CP2 are configured with two strip oxide layer OX2, and the both sides of strips of conductive connector CP3 are configured with two strip oxide layer OX3.
In at least one crack, stop ring 106 is configured between each Cutting Road 102 and corresponding guard ring 104, and in crack, stop ring 106 communicates with opening 105.In this embodiment, in each crack, stop ring 106 contacts with corresponding guard ring 104, but the present invention is not as limit.(do not illustrate) in another embodiment, in each crack, stop ring 106 does not contact with corresponding guard ring 104.In one embodiment, any material layer is not all configured with in stop ring 106 and opening 105 in crack.Therefore, the opening 105 of guard ring 104 also can be considered a part for stop ring 106 in crack, and in this crack, stop ring 106 more extends in the chip 100 of part.
At least one interconnection structure 108 passes the opening 105 of guard ring 104 and connects the inner member 110 in chip 100 and the outer member 112 in Cutting Road 102.As shown in Figure 1A, interconnection structure 108 can comprise two extension 108b, 108c of main part 108a through opening 105 and opening 105 both sides.The main part 108a of interconnection structure 108 is as the crow flies by opening 105.In other words, the main part 108a of interconnection structure 108 is identical to the distance of opening 105 sidewall, and namely the main part 108a of interconnection structure 108 be arranged in parallel relative to the sidewall of opening 105.Extension 108b, 108c are connected with the two ends of main part 108a respectively.More specifically, extension 108b can be arranged in Cutting Road 102, and extension 108c can be arranged in chip 100.In the embodiment of Figure 1A, extension 108c does not contact with guard ring 104, and extension 108b contacts with stop ring in crack 106, but the present invention is not as limit.(do not illustrate) in another embodiment, extension 108c also can contact with guard ring 104.(do not illustrate) in another embodiment, main part 108a also can more extend in Cutting Road 102, and extension 108b is not contacted with stop ring in crack 106.
In addition, the bearing of trend of main part 108a is different from the bearing of trend of extension 108b, 108c.In one embodiment, the bearing of trend of main part 108a is vertical with the bearing of trend of extension 108b, 108c.For example, the bearing of trend of main part 108a is such as X-direction, and the bearing of trend of extension 108b, 108c is such as Y-direction.
In one embodiment, interconnection structure 108 replaces stacking forming by multiple metal level and multiple conductive plunger.In this embodiment, consider manufacturing process utilizability (process availability), the composition of interconnection structure 108 can be identical with the composition of guard ring 104.More specifically, interconnection structure 108 comprise separately (such as but not limited to) be positioned at three-layer metal layer M1 ~ M3 and three alternately stacking conductive plunger CP1 ~ CP3 on shallow slot isolation structure STI.In one embodiment, in interconnection structure 108, the both sides of each conductive plunger are configured with oxide layer.The material of oxide layer comprises silica etc.More specifically, as shown in Figure 1B, 1C, the both sides of strips of conductive connector CP1 are configured with two strip oxide layer OX1, and the both sides of strips of conductive connector CP2 are configured with two strip oxide layer OX2, and the both sides of strips of conductive connector CP3 are configured with two strip oxide layer OX3.Certainly, optionally, the composition of interconnection structure 108 also can be different from the composition of guard ring 104.
Inner member 110 is such as interior bond pad.Outer member 112 is such as outer pad or detection welding pad.Interconnection structure 108 is electrically connected with inner member 110, outer member 112 respectively by metal level TM1, TM2 of the such as the superiors.In this embodiment, metal level TM1, TM2 of the superiors and interconnection structure 108 can be formed as same layer with the metal level M3 in guard ring 104.But the present invention is not as limit.Metal level TM1, TM2 of the superiors also can be formed on chip 100 by routing (wire bonding).
Be noted that especially compared with known interconnection structure, interconnection structure of the present invention can be imitated the be full of cracks that produces or crack when preventing from cutting and be penetrated into the problem of active region in chip.Inventor finds, the be full of cracks produced when chip cutting or crack, mostly can split along the oxide existed with amorphous silicon or irregular form.Therefore, if the ratio of oxide effectively can be reduced, then the be full of cracks produced when cutting effectively can be prevented.
In this embodiment, the both sides of the main part 108a of interconnection structure 108 are not all configured with material layer, or, can be considered stop ring 106(or opening 105 in partial fracture) be configured at the both sides of the main part 108a of interconnection structure 108.Stop ring 106(or opening 105 in the crack of this part) can effectively stop advancing of crack.In addition, in interconnection structure 108 of the present invention, replace known bulk oxide with metal level and conductive plunger, owing to significantly reducing the ratio of oxide, therefore effectively can prevent the crack performance produced when cutting.In other words, the metal level in interconnection structure 108 and conductive plunger can effectively stop advancing of crack.
In addition, the interconnection structure 108 of Figure 1A is designed to H type, in the main part 108a of X-direction, replaces known bulk oxide with metal level and conductive plunger, therefore can effectively stop the crack of advancing along Y-direction.Similarly, in extension 108b, 108c of Y-direction, replace known bulk oxide with metal level and conductive plunger, therefore can effectively stop the crack of advancing in X direction.
Certainly, interconnection structure of the present invention can have various change, conceives as long as according to the invention.This means, make a kind of interconnection structure with X-direction component and Y-direction component, and the composition of interconnection structure is based on metal level and conductive plunger, but not known bulk oxide, so can effectively stops in X direction and crack that Y-direction is advanced.
Below enumerate several exemplary embodiment, but not in order to limit the present invention.Such as, in order to reduce the area shared by interconnection structure, also can be designed as and only have an extension (as shown in Figure 2) or extension is removed (as shown in Figure 3, Figure 4) completely.
In the embodiment of fig. 2, interconnection structure 208 is designed to T-shaped, and can comprise through opening 105 main part 208a and be positioned at the extension 208b of side of opening 105.Extension 208b is connected with one end of main part 208a.Extension 208b can be positioned on Cutting Road 102.In addition, opening 105 does not contact with interconnection structure 208.The composition of interconnection structure 208 and the composition of interconnection structure 108 similar, be all form by multiple metal level and multiple conductive plunger are alternately stacking.It is to be particularly noted that as shown in the interconnection structure 208 of Fig. 2, in the main part 208a of X-direction, replace known bulk oxide with metal level and conductive plunger, therefore can effectively stop the crack of advancing along Y-direction.Similarly, in the extension 208b of Y-direction, replace known bulk oxide with metal level and conductive plunger, therefore can effectively stop the crack of advancing in X direction.
In the embodiments of figure 3, interconnection structure 308 is designed to linearity, and the interconnection structure 308 of this linearity is obliquely through opening 105.More specifically, the distance increasing or decreasing of the sidewall of interconnection structure 308 to opening 105, namely interconnection structure 308 is arranged relative to the sidewall slope of opening 105.As shown in Figure 3, by the direction of chip 100 to Cutting Road 102, the distance of a sidewall of interconnection structure 308 to opening 105 increases progressively, and the distance of the opposing sidewalls of the opening 105 that arrives is successively decreased.In addition, opening 105 does not contact with interconnection structure 308.The composition of interconnection structure 308 and the composition of interconnection structure 108 similar, be all form by multiple metal level and multiple conductive plunger are alternately stacking.It is to be particularly noted that as shown in Figure 3, interconnection structure 308 is designed to obliquely through opening 105, be therefore no matter X-direction and Y-direction crack all can by effectively by the metal level in interconnection structure 308 and conductive plunger stop.In other words, interconnection structure 308 does not need the crack that extension can effectively stop in X direction and Y-direction is advanced.
In the fig. 4 embodiment, interconnection structure 408 is designed to stepped.In addition, opening 105 does not contact with interconnection structure 408.The composition of interconnection structure 408 and the composition of interconnection structure 108 similar, be all form by multiple metal level and multiple conductive plunger are alternately stacking.It is to be particularly noted that as shown in Figure 4, interconnection structure 408 is designed to stepped, be therefore no matter X-direction and Y-direction crack all can by effectively by the metal level in interconnection structure 308 and conductive plunger stop.
In sum, in interconnection structure of the present invention, in X-direction and Y-direction, all replace known bulk oxide with metal level and conductive plunger, therefore can effectively stop in X direction and crack that Y-direction is advanced.In addition, the both sides of at least part of interconnection structure 108 are configured with stop ring in partial fracture, also can stop advancing of crack further.Therefore, in the process of chip cutting, the be full of cracks produced or crack all can be effectively blocked, and the problem of the inner member of Crack failure chip can not occur.Thus, significantly can improve the usefulness of chip, increase competitiveness.
Although the present invention discloses as above with embodiment; so itself and be not used to limit the present invention; technical staff in any art; not departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on the appended claim person of defining.
Claims (10)
1. a semiconductor element, is characterized in that comprising:
At least one chip;
Cutting Road, around described chip;
Guard ring, to be configured between described chip and described Cutting Road and to have at least one opening;
Stop ring in crack, is configured between described Cutting Road and described guard ring, and in described crack, stop ring communicates with described opening; And
Interconnection structure, through the outer member in the described opening of described guard ring and the inner member connected in described chip and described Cutting Road, wherein said interconnection structure is by multiple metal level and multiple conductive plunger is alternately stacking forms.
2. semiconductor element according to claim 1, wherein said interconnection structure is to the distance increasing or decreasing of the sidewall of described opening.
3. semiconductor element according to claim 1, wherein said interconnection structure comprises main part through described opening and at least one extension, and described extending part is in the side of described opening and be connected with described main part.
4. semiconductor element according to claim 3, wherein said main part is identical to the distance of the sidewall of described opening.
5. semiconductor element according to claim 3, the bearing of trend of wherein said main part is different from the bearing of trend of described extension.
6. semiconductor element according to claim 3, the bearing of trend of wherein said main part is vertical with the bearing of trend of described extension.
7. semiconductor element according to claim 1, the shape of wherein said interconnection structure is linearity, T-shaped, H type or stepped.
8. semiconductor element according to claim 1, the composition of wherein said interconnection structure is identical with the composition of described guard ring.
9. semiconductor element according to claim 1, wherein said inner member comprises interior bond pad.
10. semiconductor element according to claim 1, wherein said outer member comprises outer pad or detection welding pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410136060.6A CN104979327B (en) | 2014-04-04 | 2014-04-04 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410136060.6A CN104979327B (en) | 2014-04-04 | 2014-04-04 | Semiconductor element |
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| Publication Number | Publication Date |
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| CN104979327A true CN104979327A (en) | 2015-10-14 |
| CN104979327B CN104979327B (en) | 2018-07-27 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1830079A (en) * | 2003-07-28 | 2006-09-06 | 国际商业机器公司 | Crack stop for low K dielectrics |
| US20070013071A1 (en) * | 2005-06-24 | 2007-01-18 | International Business Machines Corporation | Probing pads in kerf area for wafer testing |
| US20100001405A1 (en) * | 2008-07-01 | 2010-01-07 | XMOS Ltd. | Integrated circuit structure |
| US20130256826A1 (en) * | 2012-04-02 | 2013-10-03 | International Business Machines Corporation | Discontinuous guard ring |
-
2014
- 2014-04-04 CN CN201410136060.6A patent/CN104979327B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1830079A (en) * | 2003-07-28 | 2006-09-06 | 国际商业机器公司 | Crack stop for low K dielectrics |
| US20070013071A1 (en) * | 2005-06-24 | 2007-01-18 | International Business Machines Corporation | Probing pads in kerf area for wafer testing |
| US20100001405A1 (en) * | 2008-07-01 | 2010-01-07 | XMOS Ltd. | Integrated circuit structure |
| US20130256826A1 (en) * | 2012-04-02 | 2013-10-03 | International Business Machines Corporation | Discontinuous guard ring |
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| CN104979327B (en) | 2018-07-27 |
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