CN104979170B - For the platinum dopant method in the soaking solution and fast recovery diode preparation process of platinum dopant - Google Patents
For the platinum dopant method in the soaking solution and fast recovery diode preparation process of platinum dopant Download PDFInfo
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- CN104979170B CN104979170B CN201410139452.8A CN201410139452A CN104979170B CN 104979170 B CN104979170 B CN 104979170B CN 201410139452 A CN201410139452 A CN 201410139452A CN 104979170 B CN104979170 B CN 104979170B
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Abstract
The present invention relates to a kind of soaking solution for platinum dopant, contain ammonium chloroplatinite and hydrofluoric acid in the solution.The present invention also provides a kind of platinum dopant methods in fast recovery diode preparation process, and described method includes following steps：（1）Silicon chip is immersed in the soaking solution of platinum dopant, the silicon chip for having adsorbed platinum ion is obtained；（2）Annealing, obtains the silicon materials of platinum dopant.Method provided by the invention overcomes the technology prejudice that the prior art carries out platinum dopant using evaporation or sputtering, and innovative carries out platinum dopant using solution to silicon sheet material, and a kind of new thinking is provided for the platinum dopant method in fast recovery diode preparation process.
Description
Technical field
The invention belongs to the preparation fields of diode, and in particular to a kind of soaking solution for platinum dopant and restore two soon
Platinum dopant method in pole pipe preparation process.
Background technology
Fast recovery diode（Abbreviation FRD）, it is a kind of semiconductor having the characteristics that switching characteristic is good, reverse recovery time is short
Diode is mainly used in the electronic circuits such as Switching Power Supply, PWM pulse width modulators, frequency converter, as two pole of high-frequency rectification
Pipe, fly-wheel diode or damper diode use.
In fast recovery diode, silicon fast recovery diode is widely used.In order to improve switching speed, Reverse recovery is reduced
Time Trr, traditional method is adulterated using heavy metal（Such as gold doping mixes platinum）With the technologies such as electron radiation big face in the diode
Product is even generally introduced complex centre to eliminate the excess carriers in diode, and realizing reduces device reverse recovery time Trr
Purpose.Gold doping device energy level is deeper, and hot properties is poor；The defect that electron irradiation is inducted is unstable, at a lower temperature can
It degenerates and disappears, and the device creepage being prepared is bigger than normal；And the displacement atom that platinum diffuses to form is stable structure, therefore device
The high-temperature stability of part is good.
In the preparation process of fast recovery diode, common platinum technique of mixing is platinum evaporation or platinum sputtering.Restore two fast
In pole pipe, as the platinum amount very little in complex centre, platinum sputtering or platinum evaporation cause the consumption of platinum excessive, and excessive platinum is in silicon chip
On, it causes to waste, and improve cost of manufacture；And platinum evaporation or platinum sputtering are physically to be deposited on silicon chip surface, are caused
Stress brings excessive tension, influences the activation of platinum, hinders platinum to become effective complex centre, causes fast recovery diode
It can be not good enough.
Therefore, a kind of method preparing the platinum dopant in fast recovery diode preparation process, the party are badly in need of in this field
The cost of method is low, easy to operate, and condition is easily-controllable, and the platinum dopant silicon materials being prepared are used for the performance of fast recovery diode
It is excellent.
Invention content
In view of the deficiencies of the prior art, the purpose of the present invention is to provide in a kind of fast recovery diode preparation process
Platinum dopant method, this method it is easy to operate, condition is easily-controllable, and the platinum dopant silicon materials being prepared for soon restore two
The performance of pole pipe is excellent.
The method of platinum dopant in fast recovery diode preparation process provided by the invention is to impregnate silicon sheet material
In platinum dopant solution, platinum ion is made to be adsorbed on silicon chip surface in the form of free state, reaching reduces the almost nil mesh of stress
, this mode contributes to platinum to form efficient complex centre in silicon sheet material, realizes forward voltage drop（Vf）And Reverse recovery
Time（Trr）The optimization of performance.
Method innovation provided by the invention realizes the platinum dopant to silicon sheet material using platinum dopant solution, overcomes existing
There is technology to carry out the technology prejudice of platinum dopant only with vapor deposition methods such as platinum evaporation, platinum sputterings.
Present invention firstly provides a kind of soaking solution for platinum dopant, contain ammonium chloroplatinite and hydrogen in the solution
Fluoric acid.
In soaking solution of the present invention, a concentration of 0.01~10g/L deionized waters of ammonium chloroplatinite, such as 0.02g/
L、0.07g/L、0.14g/L、0.18g/L、0.5g/L、0.8g/L、1.3g/L、2.7g/L、3.3g/L、5g/L、6.4g/L、
7.8g/L, 8.7g/L, 9.5g/L, 9.9g/L etc..That is, in the soaking solution, every liter of deionized water is added 0.01
The ammonium chloroplatinite of~10g.
In soaking solution of the present invention, every gram of ammonium chloroplatinite corresponds to the hydrofluoric acid that 0.1~1000mL is added, such as often
Gram ammonium chloroplatinite correspond to be added the amount of hydrofluoric acid be 0.4mL, 0.9mL, 1.4mL, 4mL, 15mL, 27mL, 44mL, 58mL,
70mL, 120mL, 205mL, 220mL, 287mL, 356mL, 568mL, 675mL, 780mL, 956mL, 998mL etc.；Wherein, described
The hydrofluoric acid of addition is with the densimeter of 30v%.The present invention does not limit the concentration of hydrofluoric acid, and hydrofluoric acid described herein is with 30v%'s
Densimeter is intended merely to the amount of the more specific hydrofluoric acid for indicating to be actually added into, that is to say, that the hydrofluoric acid that the present invention is added
Concentration can be the concentration for the hydrofluoric acid that can arbitrarily obtain, such as 20%, 25%, 40%, 37% etc., need to only carry out accordingly converting i.e.
It can.
The present invention also provides a kind of platinum dopant methods in fast recovery diode preparation process, and the method includes as follows
Step：
（1）Silicon chip is immersed in the soaking solution for being previously described for platinum dopant, the silicon chip for having adsorbed platinum ion is obtained；Institute
It is PN junction diode silicon chip to state silicon chip；
（2）Annealing, obtains the silicon materials of platinum dopant.
In platinum dopant method in fast recovery diode preparation process provided by the invention, by the way that silicon chip is immersed in immersion
In solution, the purpose being adsorbed in platinum element on silicon chip is realized, passes through annealing process later, makes in platinum elements diffusion to silicon chip
Portion, and it is activated as effective complex centre.
Silicon chip of the present invention is the PN junction diode silicon chip of any model, is not specifically limited, this field can pass through
Professional knowledge is made or is commercially available.
Preferably, in the platinum dopant method in fast recovery diode preparation process of the present invention, the soaking time >=
0.1s, for example, 0.5s, 4s, 35s, 80s, 208s, 296s, 450s, 552s, 700s, 852s, 968s, 1058s, 1540s,
1854s, 2050s, 2358s etc.；It is preferred that 0.1~2000s；Soaking temperature be 5~50 DEG C, preferably 20~35 DEG C, for example, 22 DEG C, 25
DEG C, 29 DEG C, 34 DEG C etc..
Preferably, step（2）Step is carried out before（2’）：The silicon chip of platinum ion has been adsorbed in cleaning, removes and dissociates on silicon chip
Platinum ion.
The present invention is for " step（2’）：The silicon chip of platinum ion has been adsorbed in cleaning, removes the platinum ion to dissociate on silicon chip "
Mode is not specifically limited, and those skilled in the art can select according to the professional knowledge or actual conditions of grasp, typical
But it is unrestricted to include：The silicon chip for having adsorbed platinum ion is placed in hydrofluoric acid and impregnates or rinses；Or platinum ion will be adsorbed
Silicon chip be placed in hydrogen peroxide and sulfuric acid solution impregnate or rinse；Or the silicon chip for having adsorbed platinum ion is placed in hydrofluoric acid and fluorination
It is impregnated or is cleaned in ammonium；Or the silicon chip for having adsorbed platinum ion is placed in deionized water and is impregnated or is cleaned etc..
The present invention is not specifically limited the mode of annealing, and those skilled in the art can be according to the professional knowledge of grasp
The mode and condition of annealing are selected with actual conditions, it is typical but non-limiting include vacuum annealing, furnace anneal, connect
The annealing of touch high current, infrared annealing or induction type anneal etc..
Preferably, step（2）The mode of the annealing is selected from furnace anneal and/or infrared annealing.
The present invention is also not specifically limited the actual conditions of annealing, typical but non-limiting, the furnace anneal
Condition be：300~1200 DEG C of annealing temperature, 1~500min of annealing time.
In order to further activate the platinum ion in silicon chip, the present invention is further preferably in step（2）The annealing
Silicon chip is soaked in the solution of hydrochloric acid and hydrogen peroxide afterwards.
As optimal technical scheme, the platinum dopant method in fast recovery diode preparation process of the present invention includes as follows
Step：
（1）Silicon chip is impregnated in soaking solution described in claim 1, the silicon chip for having adsorbed platinum ion is obtained；
（2’）The silicon chip of platinum ion has been adsorbed in cleaning, removes the free platinum ion of silicon chip surface；
（2）Annealing, silicon chip is soaked in the solution of hydrochloric acid and hydrogen peroxide, takes out the silicon material for drying and obtaining platinum dopant
Material.
Invention further provides a kind of fast recovery diode, the fast recovery diode is prepared by preceding method
Platinum dopant silicon materials be prepared.
Compared with prior art, the present invention has the advantages that：
（1）Method provided by the invention overcomes the prior art using vapor deposition（It such as evaporates or sputters）Platinum is carried out to mix
Miscellaneous technology prejudice, innovative carries out platinum dopant using solution to silicon sheet material, is in fast recovery diode preparation process
Platinum dopant method provides a kind of new thinking；
（2）Platinum dopant method provided by the invention makes platinum ion be adsorbed on silicon chip surface in the form of free state, reaches drop
The almost nil purpose of low stress, this mode contribute to platinum to form efficient complex centre in silicon sheet material, realize positive
Pressure drop（Vf）And reverse recovery time（Trr）The optimization of performance；
（3）Platinum dopant method provided by the invention is easy to operate, and condition is easily-controllable, and the platinum dopant silicon materials being prepared are used
It is good in the performance of fast recovery diode.
Specific implementation mode
Of the invention for ease of understanding, it is as follows that the present invention enumerates embodiment.Those skilled in the art are it will be clearly understood that the implementation
Example is only to aid in the understanding present invention, should not be regarded as a specific limitation of the invention.
The thickness of PN junction diode silicon chip used in the specific embodiment of the invention is 390 μm, wherein P is 5 Ω/cm-1, N is 15 Ω/cm-1600V, the diode of 10A.But it will be understood by those skilled in the art that specific embodiment party of the present invention
PN junction diode silicon chip used in formula is specific example, could alternatively be what any those skilled in the art can obtain
Diode silicon wafer with PN junction.
Embodiment 1
A kind of platinum dopant method in fast recovery diode preparation process, described method includes following steps：
（1）Silicon chip is immersed in 2000s in the soaking solution of platinum dopant under the conditions of 5 DEG C, platinum ion has been adsorbed in acquisition
Silicon chip；In the soaking solution of the platinum dopant, the ammonium chloroplatinite containing 0.01g in every liter of deionized water, every gram of chloroplatinous acid
The hydrofluoric acid of 1000mL is added in ammonium（A concentration of 30v% of the hydrofluoric acid）；
（2）By step（1）The obtained silicon chip for having adsorbed platinum ion is placed in tube furnace, at 300 DEG C, annealing
500min obtains the silicon materials of platinum dopant, is denoted as silicon chip I.
Embodiment 2
A kind of platinum dopant method in fast recovery diode preparation process, described method includes following steps：
（1）Silicon chip is immersed in 0.1s in the soaking solution of platinum dopant under the conditions of 50 DEG C, platinum ion has been adsorbed in acquisition
Silicon chip；In the soaking solution of the platinum dopant, the ammonium chloroplatinite containing 10g/L in every liter of deionized water, every gram of chloroplatinous acid
The hydrofluoric acid of 0.1mL is added in ammonium（A concentration of 30v% of the hydrofluoric acid）；
（2）By step（1）The obtained silicon chip for having adsorbed platinum ion is placed in tube furnace, and at 1200 DEG C, anneal 1min,
The silicon materials for obtaining platinum dopant, are denoted as silicon chip II.
Embodiment 3
A kind of platinum dopant method in fast recovery diode preparation process, described method includes following steps：
（1）Silicon chip is immersed in 1000s in the soaking solution of platinum dopant under the conditions of 30 DEG C, platinum ion has been adsorbed in acquisition
Silicon chip；In the soaking solution of the platinum dopant, the ammonium chloroplatinite containing 5g in every liter of deionized water, every gram of ammonium chloroplatinite adds
Enter the hydrofluoric acid of 500mL（A concentration of 30v% of the hydrofluoric acid）；
（2’）By step（1）The obtained silicon chip for having adsorbed platinum ion, which is placed in the hydrofluoric acid of a concentration of 20v%, impregnates 1min
Cleaning removes the free platinum ion of silicon chip surface；
（2）By step（2’）Obtained silicon chip is placed in tube furnace, and at 1000 DEG C, anneal 200min, obtains platinum dopant
Silicon materials, be denoted as silicon chip III.
Embodiment 4
A kind of platinum dopant method in fast recovery diode preparation process, described method includes following steps：
（1）Silicon chip is immersed in 800s in the soaking solution of platinum dopant under the conditions of 20 DEG C, platinum ion has been adsorbed in acquisition
Silicon chip；In the soaking solution of the platinum dopant, the ammonium chloroplatinite containing 10g in every 6 liters of deionized waters, the hydrofluoric acid of 700mL
（A concentration of 30v% of the hydrofluoric acid）；
（2’）With volume ratio 1:1 hydrogen peroxide and sulfuric acid mixed solution is to step（1）What is obtained has adsorbed the silicon of platinum ion
Piece rinses 5min, removes the free platinum ion of silicon chip surface；
（2）By step（2’）Obtained silicon chip is placed in tube furnace, and at 1000 DEG C, anneal 200min, obtains platinum dopant
Silicon materials, be denoted as silicon chip IV.
Embodiment 5
A kind of platinum dopant method in fast recovery diode preparation process includes the following steps：
（1）Silicon chip is immersed in 1600s in the soaking solution of platinum dopant under the conditions of 30 DEG C, platinum ion has been adsorbed in acquisition
Silicon chip；In the soaking solution of the platinum dopant, the ammonium chloroplatinite containing 3g in every liter of deionized water, every gram of ammonium chloroplatinite pair
300mL hydrofluoric acid should be added（A concentration of 30v% of the hydrofluoric acid）；
（2’）With volume ratio 5:1 hydrogen peroxide and sulfuric acid mixed solution is to step（1）What is obtained has adsorbed the silicon of platinum ion
Piece rinses 5min, removes the free platinum ion of silicon chip surface；
（2）By step（2’）Obtained silicon chip is placed in tube furnace, and at 700 DEG C, anneal 400min, later soaks silicon chip
It steeps in the solution of hydrochloric acid and hydrogen peroxide, the platinum ion further activated in silicon chip is denoted as to obtain the silicon materials of platinum dopant
Silicon V.
Performance test：
In IF（Forward current）For 10A, dIF/dt（Forward current changes with time rate）For 500A/ μ s, Vr=400V items
Under part, silicon chip I that testing example 1~5 is prepared, silicon chip II, silicon chip III, silicon chip IV, silicon chip reverse recovery time（Trr）
And softness；
In IF（Forward current）Under the conditions of 10A, silicon chip I that testing example 1~5 is prepared, silicon chip II, silicon chip
The forward voltage of III, silicon chip IV, silicon chip；
Test result is as shown in table 1.
The performance test results for the platinum dopant silicon materials that 1 Examples 1 to 5 of table obtains
| Project | Vf（V） | Trr（ns） | Softness |
| Silicon chip I | 1.15±20% | 100±20% | 1.2±20% |
| Silicon chip II | 1.05±20% | 120±20% | 1.2±20% |
| Silicon chip III | 2.9±10% | 15±10% | 1.2±10% |
| Silicon chip IV | 2.8±10% | 16±10% | 1.2±10% |
| Silicon V | 2.3±10% | 30±10% | 1.2±10% |
Wherein, result above is indicated with " measure mean value ± deviation ", for example, 1.15 ± 20% mean silicon chip I forward voltage
VfTest number be 1.14V ± 20%.
So that platinum ion is adsorbed on silicon chip surface in the form of free state by 1 platinum dopant method provided by the invention of table, reaches
The almost nil purpose of stress is reduced, this mode contributes to platinum to form efficient complex centre in silicon sheet material, realizes just
To pressure drop（Vf）And reverse recovery time（Trr）The optimization of performance.
Applicant states that the present invention illustrates detailed process equipment and the technological process of the present invention by above-described embodiment,
But the invention is not limited in above-mentioned detailed process equipment and technological processes, that is, it is above-mentioned detailed not mean that the present invention has to rely on
Process equipment and technological process could be implemented.Person of ordinary skill in the field it will be clearly understood that any improvement in the present invention,
The addition of equivalence replacement and auxiliary element to each raw material of product of the present invention, the selection etc. of concrete mode all fall within the present invention's
Within protection domain and the open scope.
Claims (9)
1. a kind of soaking solution carrying out platinum dopant in silicon materials in preparing fast recovery diode technique, which is characterized in that
Contain ammonium chloroplatinite and hydrofluoric acid in the solution；
In the soaking solution, a concentration of 0.01~10g/L deionized waters of ammonium chloroplatinite；In the soaking solution, every gram
Ammonium chloroplatinite corresponds to the hydrofluoric acid that 0.1~1000mL is added；The hydrofluoric acid is with the densimeter of 30v%.
2. a kind of platinum dopant method in fast recovery diode preparation process, which is characterized in that described method includes following steps：
(1) silicon chip is impregnated in soaking solution described in claim 1, obtains the silicon chip for having adsorbed platinum ion；The silicon chip
For PN junction diode silicon chip；
(2) it anneals, obtains the silicon materials of platinum dopant.
3. method as claimed in claim 2, which is characterized in that the soaking time >=0.1s, soaking temperature are 5~50 DEG C.
4. method as claimed in claim 2, which is characterized in that the soaking time is 0.1~2000s, soaking temperature 20
~35 DEG C.
5. method as claimed in claim 2, which is characterized in that carry out step (2 ') before step (2)：Cleaning adsorbed platinum from
The silicon chip of son removes the platinum ion to dissociate on silicon chip.
6. method as claimed in claim 2, which is characterized in that the mode of step (2) described annealing be selected from furnace anneal and/or
Infrared annealing.
7. method as claimed in claim 2, which is characterized in that optional after step (2) described annealing that silicon chip is soaked in salt
In the solution of acid and hydrogen peroxide, the platinum ion in silicon chip is further activated.
8. method as claimed in claim 2, which is characterized in that described method includes following steps：
(1) silicon chip is impregnated in soaking solution described in claim 1, obtains the silicon chip for having adsorbed platinum ion；
(2 ') silicon chip of platinum ion has been adsorbed in cleaning, removes the free platinum ion of silicon chip surface；
(2) it anneals, silicon chip is soaked in the solution of hydrochloric acid and hydrogen peroxide, take out the silicon materials for drying and obtaining platinum dopant.
9. a kind of fast recovery diode, which is characterized in that the fast recovery diode is using one of claim 2~8 side
The platinum dopant silicon materials that method is prepared are prepared.
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| CN201410139452.8A CN104979170B (en) | 2014-04-08 | 2014-04-08 | For the platinum dopant method in the soaking solution and fast recovery diode preparation process of platinum dopant |
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| US7153801B2 (en) * | 2003-06-18 | 2006-12-26 | Chevron Phillips Chemical Company Lp | Aromatization catalyst and methods of making and using same |
| CN101654777B (en) * | 2009-09-08 | 2011-03-30 | 南京航空航天大学 | Method for chemically plating platinum on silicon surface |
| US8317910B2 (en) * | 2010-03-22 | 2012-11-27 | Unity Semiconductor Corporation | Immersion platinum plating solution |
| CN103227106B (en) * | 2013-04-24 | 2016-03-09 | 江阴新顺微电子有限公司 | The process of deposit and doping Pt on semi-conductor silicon chip |
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