CN104977600A - Systems and methods for providing a shared charge in pixelated image detectors - Google Patents

Systems and methods for providing a shared charge in pixelated image detectors Download PDF

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Publication number
CN104977600A
CN104977600A CN201510436221.8A CN201510436221A CN104977600A CN 104977600 A CN104977600 A CN 104977600A CN 201510436221 A CN201510436221 A CN 201510436221A CN 104977600 A CN104977600 A CN 104977600A
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anode
pixel
pixels
pixelation
anode pixels
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CN104977600B (en
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J-P.布尼克
J.W.休格
I.布勒维斯
Y.赫菲茨
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General Electric Co
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General Electric Co
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/249—Measuring radiation intensity with semiconductor detectors specially adapted for use in SPECT or PET
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

Systems and methods for providing a shared charge in pixelated image detectors are provided. One method includes providing a plurality of pixels for a pixelated solid state photon detector in a configuration such that a charge distribution is detected by at least two pixels and obtaining charge information from the at least two pixels. The method further includes determining a position of an interaction of the charge distribution with the plurality of pixels based on the obtained charge information.

Description

For providing the system and method for shared electric charge in pixelation image detector
Background technology
Theme disclosed herein is usually directed to image detector, relates more specifically to pixelation solid-state image detector and utilizes the photon detection of described detector.
For the detector of diagnostic imaging system, the detector of (SPECT) and computed tomography (CT) imaging system of such as taking a picture for single photon emission computed tomography, usually be made up of semiconductor material, wherein such as cadmium zinc telluride (CdZnTe is usually referred to as CZT), cadmium telluride (CdTe) and silicon (Si).These semiconductor detectors typically comprise the array of pixelated detector module.The spatial resolution of the solid-state gamma-ray detector of pixelation is limited by the size of detector pixel.Minimum Pixel Dimensions is also limited by solid state physics and engineering science.
Gamma ray in CZT detector forms charge cloud gradually during interacting between continuous print negative electrode and pixelated anode.The growth of this cloud is moved towards the anode-side of detector.In the conventional system, each pixel anode is connected on prime amplifier and a large amount of read-out channel (such as 256 read-out channels) of every pixel.Therefore, along with Pixel Dimensions reduces to improve spatial resolution, the quantity of total read-out channel increases, thus adds electronic equipment, controller, cost and thermogenetic complexity.Therefore, the gamma and x-ray detector that use direct conversion semiconductor material (such as CZT or CdTe) is manufactured, to reduce the complexity (such as reducing application-specific IC (ASIC) complexity) of electronic equipment and reduce or avoid the charge cloud shared between adjacent pixels with relatively large Pixel Dimensions.
But, for x-ray and CT application, this large Pixel Dimensions show and unsatisfactory.In addition, in SPECT system, image property is directly relevant to the quantity of detector pixel.
Summary of the invention
According to various embodiment, provide the method for the CHARGE DISTRIBUTION for controlling pixelation solid state optical detectors.The method is included in for pixelation solid state optical detectors provides multiple pixel to make to detect CHARGE DISTRIBUTION by least two pixels in configuration, and obtains charge information from described at least two pixels.The method also comprises determines CHARGE DISTRIBUTION and the interactional position of multiple pixel based on obtained charge information.
According to other embodiment, provide the pixelation solid state optical detectors of the multiple anode pixels comprised on a surface of Semiconductor substrate and Semiconductor substrate.Each in described anode pixels has tensile elongation at least one direction.Pixelation solid state optical detectors also comprises the negative electrode on another surface of the Semiconductor substrate contrary with multiple anode pixels.
According to other embodiments, provide the pixelation solid state optical detectors of the multiple anode pixels comprised on a surface of Semiconductor substrate and Semiconductor substrate.Each in described anode pixels is divided into multiple sub-pixel.Pixelation solid state optical detectors also comprises the negative electrode on another surface of the Semiconductor substrate contrary with multiple anode pixels.
Accompanying drawing explanation
Fig. 1 is the viewgraph of cross-section of the simplification of a part for the pixelated detectors formed according to various embodiment.
Fig. 2 is according to various embodiment, for controlling the process flow diagram of the method for the interelement CHARGE DISTRIBUTION of multiple pixelations of pixelated detectors.
Fig. 3 is the top perspective of the pixelation photon detector according to an embodiment formation.
Fig. 4 is the top perspective of the gamma camera of the multiple pixelation photon detectors comprising Fig. 3.
Fig. 5 is the vertical view of the pixelated detectors formed according to various embodiment and shows different pixel arrangement.
Fig. 6 is the vertical view of the pixelated detectors formed according to various embodiment and shows row and column and connect and arrange.
Fig. 7 forms according to various embodiment, has the vertical view of the pixelated detectors of stretched pixels.
Fig. 8 is according to various embodiment, the process flow diagram utilizing the method for the position of pixelated detectors determination charge interaction.
Fig. 9 illustrates that the pixel formed according to various embodiment connects the diagram of arranging.
Figure 10 illustrates that the another kind of pixel formed according to various embodiment connects the diagram of arranging.
Figure 11 is the diagram of the charge detection illustrated according to various embodiment.
Figure 12 is the diagram that the charge detection without combination of channels is described.
Figure 13 is the diagram that the charge detection do not had in y-axis in the interpolation situation of position is described.
Figure 14 illustrates according to various embodiment, the diagram using the charge detection of the anode staggered.
Figure 15 illustrates according to various embodiment, the diagram using the charge detection of the anode staggering and stretch.
Figure 16 forms according to various embodiment, has the vertical view of the pixelated detectors of stretched pixels.
Figure 17 is according to being illustrated as the vertical view with the pixelated detectors of stretched pixels formed the various embodiments of the anode pixels connected.
Figure 18 is formed according to various embodiment, in two-dimensional array, have the vertical view of the pixelated detectors of stretched pixels.
Figure 19 is the viewgraph of cross-section that basis has the simplification of a part for the pixelated detectors of the various embodiments formation of resistive layer.
Figure 20 is that basis has the diagram of the viewgraph of cross-section of a part for the pixelated detectors of the various embodiments formation of pixelated anode and pixelated cathode and describes the interactional degree of depth (DOI).
Figure 21 is the diagram of the viewgraph of cross-section of a part for the two-layer pixelated detectors formed according to various embodiment.
Figure 22 is the diagram that the multilayer halved belt detector formed according to various embodiment is described.
The skeleton view of the nuclear medicine imaging system that Figure 23 builds according to various embodiment, demonstrate.
Figure 24 is the block diagram of the nuclear medicine imaging system built according to various embodiment.
Embodiment
When reading together with accompanying drawing, will be better understood the detailed description of aforesaid summary of the invention and some embodiment below.Just illustrate the diagram of the functional block of various embodiment, functional block not necessarily represents the division between hardware circuit.Therefore, such as one or more functional block (such as processor or storer) can realize in single hardware (such as general purpose signal processor or random access memory, hard disk etc.) or multiple hardware.Similarly, program can be independently program, can merge as subroutine in an operating system, can be the function in the software package installed, etc.Should be appreciated that various embodiment is not limited to the layout shown in figure and instrument.
As used herein, with odd number record and the element started with word " a " or " an " or step should be understood to not get rid of the plural number of described element or step, this eliminating unless explicitly claimed.In addition, mention that " embodiment " does not intend to be interpreted as getting rid of the existence of other embodiment also incorporating described feature.In addition, unless there are clearly contrary statement, the embodiment of element or multiple element that " comprising " or " having " has special properties can comprise additional such element without that character.
As also used herein, the data but the embodiment being observable image that wherein generate expression image do not intended to get rid of in phrase " reconstruction image ".Therefore, term as used herein " image " broadly refers to observable image and represents the data of observable image.But many embodiments generate or are configured to generate at least one observable image.
Various embodiment provides the system and method for controlling the CHARGE DISTRIBUTION in pixelation solid-state (such as semiconductor) detector, shares to allow detection electric charge and utilizes pixelated detectors identification electric charge to share interactional position.The pixel of configuration pixelated detectors, makes to detect the CHARGE DISTRIBUTION that can be limited by electron charge cloud by least two pixels or sub-pixel.Provide the difference configuration of pixelated detectors and arrange, such as, there is different shapings and the pixel of location or the pixelation gamma camera of sub-pixel elements.When not rolling up in relevant electronic equipment, provide higher spatial resolution according to the pixelated detectors that various embodiment is formed.The technique effect of at least one embodiment in various embodiment there is provided sensitiveer imaging, and such as sensitiveer single photon emission computed tomography is taken a picture (SPECT) and/or x-ray or computed tomography (CT) imagine scanner.In addition, when implementing various embodiment, the operation under more low power consumption levels can be provided.Various embodiment also allows the dual purpose pixelated detectors being provided for comprising picture x-ray and gamma-ray detector.
It should be noted that, although described various embodiment is relevant with the nuclear medicine imaging system with particular elements (comprising customized configuration or the layout of pixelated detectors), various embodiment is not limited to nuclear medicine imaging system or specific pixelated detectors described herein.Therefore, the various embodiments relevant with the diagnostic imaging system of any type can be realized, such as medical diagnostic imaging system (as CT or X-ray system), non-destructive testing (NDT) system, safety monitoring system (as air transport luggage or airport security imaging system) etc.In addition, configuration can be revised and arrange, making to keep at least some embodiment in various embodiments the position of CHARGE DISTRIBUTION and relation between the corresponding signal received from the anode of pixelated detectors.
Various embodiment provides detection of photons (such as launching gamma ray photon or transmission x-ray photon) and uses configuration and layout to share the pixelated detectors of the position of the photon that identification detects according to the electric charge between the pixel of pixelated detectors or sub-pixel.Therefore, owing to detecting the CHARGE DISTRIBUTION shared between neighbor, so can be included in producing between neighbor interactional electric charge in the response function being used for detected gamma-ray emission as described in detail herein.
Fig. 1 is the cross-sectional elevational view of the simplification of the pixelated detectors 30 formed according to various embodiment.Pixelated detectors 30 comprises the substrate 32 formed by the radiometric response semiconductor material of such as cadmium zinc telluride (CZT) crystal or cadmium telluride (CdTe).The pixellated structure (as described in detail herein) with multiple pixel or sub-pixel is limited to form multiple pixel electrode being designated anode 34 by depositing multiple conductive electrode.Deposition is performed to limit electrode structure by mask.As alternative, at the deposited on silicon continuous print conductive layer (such as metal level) of crystal, and formed the electrode of multiple electric isolution by chemistry or laser-induced thermal etching, photoetching process or other method known in the art.Just as described in detail herein, the spacing between the shape of anode 34 and configuration and each anode 34 is convenient to determine that electric charge shares the position of interaction 36 according to producing electric charge by detected photon.Just as described in detail herein, when incide the photon on substrate 32 by ionizing event off-energy and in the region of substrate 32, leave paired mobile electron (e-) and hole (+) (illustrate only pair of electrons/hole for the sake of simplicity) time, charge interaction 36 occurs.
Pixelated detectors 30 is also included in the negative electrode 38 on the surface of the substrate 32 contrary with anode 34 or side, side, and negative electrode 38 can be formed by single cathode electrode.It should be noted that anode 34 can limit pixel or can be divided to make to form sub-pixel.Should also be noted that and one or more collimating apparatus can be set before the radiation-detecting surface limited by negative electrode 38.Should also be noted that according to various embodiment, laser-induced thermal etching and photoetching process and other micromachining and nanometer technology method can create the structure that has and reach submicrometer and several nano level fine detail for using.
Fig. 2 is the process flow diagram of method 40 for controlling multiple pixelation elements of pixelated detectors, the CHARGE DISTRIBUTION (also referred to as charge cloud) especially between pixel anode.Particularly, at 42 places, the quantity of electric charge arriving the anode of pixelated detectors is controlled as function interactional with anode.As described in detail herein, by limiting the difference configuration of pixelation element and arranging (such as by being the setting of pixelation element and spacing) and connect pixelation element that to control electric charge with the relation limited between the position of the electric charge detected and anode signal shared.Such as by controlling the quantity of electric charge arriving anode, such as, by being anode setting as described in detail herein, provide location and the detection of radiation interaction event, i.e. charge sharing even.
In operation, from the negative electrode of photon (such as launching gamma ray and/or transmission x-ray) the difference collision detector of source (radioactive nuclide of decay in such as patient body or x-ray tube).Especially, as shown in Figure 1, negative electrode 38 can be single cathode electrode and anode 34 can be shaped pixel electrode array.The voltage difference be applied to during operation between anode 34 and negative electrode 38 produces electric field (detector field) in substrate 32.Detector field can be such as approximately every centimetre one kilovolt to every centimetre three kilovolts.When photon incides (collision negative electrode 38) on substrate 32, usually can lose all photon energies by ionizing event photon in substrate 32 and leave paired mobile electron and hole in the little regional area of substrate 32.
Depend on photon energy, before interacting with crystal, photon can penetrate in crystal usually.It should be noted that energy is higher, the possibility that photon penetrates crystal darker is larger.Initial ionizing event produces the electronics (e-) of movement fast and stays in " hole " that just ionizing in crystal.The electronics of quick movement makes the more parts ionization of crystal with other electron interaction at once.Therefore, the electron amount (equaling number of cavities) produced and the size of ionized region increase with photon energy.As the result of detector field, hole (+) to drift about and electronics (e-) drifts about towards anode 34, induced charge on negative electrode 38 and anode 34 accordingly towards negative electrode 38.Between drift episode, due to initial residual speed, result of random thermal motion, mutually Coulomb repulsion and with impurities impinge in crystal and cause electronics (and hole) to scatter.As described in detail herein, the induced charge on detection anode 34, and determine to detect the time of photon, the energy of the photon be detected be deposited in substrate 32 has where in how many, substrate 32 to there occurs photon to interact.Especially, as described in detail herein, for the ease of detecting the location of pixels (and other charge information) that gamma and x-ray photon and identification are detected, by controlling for anode setting the quantity of electric charge arriving anode.
Refer again to the method 40 of Fig. 2, at 44 places, the electric charge produced by as above detected photon produces the signal obtained from multiple anode.Described signal is corresponding with the one or more anodes (or subpixellated anode) detecting energy (energy such as shared by two adjacent anode).At 46 places, this signal message is used to estimate interactional position.According to position, CHARGE DISTRIBUTION with determine location estimation having the known relation between the signal observed at the anode place of this controlled quantity of electric charge.Such as, as described in detail herein, Charge sites estimation can based on the estimation of two anodes from the shared electric charge detected.In addition, at 48 places, use such as from the determined estimation of two anodes, use the estimated position of CHARGE DISTRIBUTION to determine correction factor.
The subpixellated detector 50 shown in using method 40, Fig. 3 can be carried out together with the pixelated detectors shown in Fig. 1 or such as subpixellated detector 50 as shown in Figure 3 and can be configured to subpixellated photonic semiconductor detector and subpixellated detector 50 in various embodiments shown in Fig. 3 is formed by CZT.Although it should be noted that sub-pixel elements is shown as be dimensioned in a specific way and formalize (showing the square electrode for separating in Fig. 3), the size of electrode, shape and connection can be revised according to the expectations or needs.In addition, As described in detail below, can be differentially pixel sizing and setting, such as, the pixellated electrodes array of serrate or zigzag can be provided.
It should be noted that in various embodiments, pixelated detectors 50 is formed by CZT or CdTe.Pixelated detectors 50 comprises the crystal 52 formed by semiconductor material.In certain embodiments (as described), the crystal face 54 of crystal 52 comprises single cathode electrode 56.The contrary crystal face 58 of crystal 52 comprises the anode 60 with anode pixels 62 array.Anode pixels 62 can have size identical in fact and be illustrated as square separately, namely forms the triangular shaped sub-pixel 63 of the pixel 62 of square shape.The size of anode pixels 62 and sub-pixel 62 can at such as 0.01 millimeter 2with 4 millimeters 2between change.Such as, in certain embodiments, pixel 62 has about 0.1x0.1 millimeter or less size.The quantity of anode pixels 62 also can be greater than or less than shown 16, such as, can provide 32 anode pixels 62.Should also be noted that the thickness of crystal 52 can be less than change between a millimeter to several centimetres.In certain embodiments, the thickness of several millimeters is used to absorb in fact at least most of impinging photon.Therefore, thickness depends on the energy of the photon that will detect.
In operation, as described in detail herein, the voltage difference put between cathode electrode 56 and anode 60 produces electric field in crystal 52.In the pixelated detectors used in the art, the electronics belonging to similar events arrives in fact an anode.In many such detectors, if the electronics produced by event spreads all over two or more electrodes, then event is rejected or by error logging.Thus, restriction is placed in the resolution of such detector, because Pixel Dimensions must be more much larger than the distribution of electronics, otherwise the event loss caused owing to partly collecting electric charge will occur.In these detectors, determine spatial resolution by anode dimension, because determine the position of event by the electrode receiving the whole or most of electric charges produced by this event.
By implementing various embodiment of the present invention, be provided at least two and alternatively more interelectrode electric charge share, and based on the electric charge detected by multiple electrode as described herein, determine event location by algorithm.In certain embodiments, the size of electrode is less than in fact the distribution of electronics.In other embodiments, for electrode setting makes to share this electric charge by adjacent electrode.In other embodiments, effective resolution scatter than electronics, electrode size or both good.
In operation; when having energy, the photon that typically is the energy of the photon used in SPECT, x-ray, CT or PET application is when inciding on crystal 52; photon can interact with crystal 52 usually, and in the little regional area of crystal 52, produces paired mobile electron and hole by secondary ionization process.As described in detail herein, as the result of applied electric field, hole drift to negative electrode 56 and electron drift to anode 60, induced charge (being also called as charge cloud or electron cloud) in anode pixels 62 and negative electrode 56 accordingly.By in detector base 64 and the suitable electronic circuit (such as application-specific IC (ASICs)) it being provided with pixelated detectors 50 sense and induced charge in part pre-service anode pixels 62.Such as, the multiple passages forming sensor amplifier chain can be provided.Detector base 64 comprises connecting elements, such as, for being installed to motherboard (not shown) and from ASICs to the connecting pin 66 of motherboard signal transmission.(such as use the method for row/column summation) as described in detail herein, use and determine charge information from the signal of the induced charge in anode pixels 62, comprise any time when detecting photon or institute's energy that is free, the photon detected be deposited in crystal have how many and in crystal where there occurs photon interaction.Then this information reconstruction image can be used as known in the art.
Fig. 4 shows the rectangle gamma cameras 70 that are multiple, such as 20 pixelated detectors 50 comprising the rectangular array being arranged to formation 5 row 4 detectors 50.The pixelated detectors 50 illustrated is arranged on motherboard 72.The gamma camera that can provide and have greater or lesser pixelated detectors 50 array is provided.Should also be noted that when the material of photon and crystal 52 interacts, usually determine the energy of the photon detected by pixelated detectors 50 according to the estimation of the total quantity of the electron-hole pair produced in the crystal 52 of detector 50.This counting is determined according to the electron amount produced in ionizing event usually, and it uses various embodiment to be estimated by the electric charge that the anode 60 of detector 50 is collected.
If fully have collected by detector electrodes all electronics and hole that the photon that detects in detector 50 produces, then the induced charge on the anode 60 of detector 50 or negative electrode 56 is the right metric of photon energy.But the energy response of each pixel, the peak of especially each peak value can move and affect the data obtained for rebuilding image in power spectrum.Use various embodiment, utilize As described in detail below, by the setting of pixel with connect that control, between location of pixels and anode signal known relation and can make mobilely to minimize or correct mobile.
For the detector used in nuclear medicine (NM) field of detecting, detector can have the crystal of 40x40x4 millimeter and larger, crystal face comprise 2.5x2.5 millimeter, a 16x16=256 anode.Thus, spatial resolution is 2.5 millimeters.One of each anode to be connected in 256 electron channels.The noise limit energy resolution provided by following fundamental component in this configuration: by the 2.5x2.5=6.25 millimeter of crystal 2dark current, electron-hole produce statistical fluctuations and single pass electronic noise.If the distribution of such as electron cloud is 0.1 millimeter, then will be limited in one and the probability of the event of a unique electrode is: [(2.5-0.1) 2]/[(2.5) 2]=0.92.Thus, the event of about 8 percent at least in part two or more electrodes (when event appear at pixel angle place or near time reach 4) between share.
For resolution is brought up to 0.5 millimeter, 80x80=6 can be used, the array of 400 anodes, each 0.5x0.5 millimeter.In this case, the probability for non-shared events is (0.4/0.5) 2=0.64.Thus, the efficiency of detection reduces greatly.In addition, must 6 be used, 400 passages.Noise is provided: by the 2*0.5x0.5=0.5 millimeter of crystal by (assuming that use two neighborhood pixels) 2the statistical fluctuations that produces of dark current, electron-hole and the single pass electronic noise of twice.But, even if the resolution of 0.5 of appropriateness millimeter (for needs 0.1 millimeter of resolution mammography be inadequate) also need 6,400 passages, this may be difficult to connect, encapsulation, cooling and there is high cost.
One or more by what implement in various embodiment, the detector with the number of channels of minimizing comprise multiplely be divided into two sub-pixel 63(i.e. two electrodes) anode pixels 62.With reference to figure 5, for the detector of 40x40 millimeter, the pixel of each 2.5x2.5 millimeter is divided into two electrodes: column electrode (the top-right sub-pixel 63 of each pixel 62) and row electrode (the bottom-right sub-pixel 63 of each pixel 62).In various embodiments, electronics must be shared and the position of no matter event by column electrode and row electrode by electrode patterning.
The shape of sub-pixel 63 can be changed according to the expectations or needs.Such as except there is the anode pixels 62a of triangular shaped sub-pixel, also can provide following shape: the anode pixels 62d of there is the anode pixels 62b of concentric circles sub-pixel, there is the anode pixels 62c of rectangular shape sub-pixel, have inner square shape and outer square boundary shape sub-pixel, have semi-circular shape sub-pixel anode pixels 62e, there is the anode pixels 62f of (finger type) sub-pixel of interdigitated and there is the anode pixels 62b of segmentation toroidal sub-pixel.In addition, in certain embodiments, which provide shared electric charge, anode pixels 62h is square shape, does not have sub-pixel.It should be noted that relative to anode pixels 62a-62g, anode pixels 62f is used to various embodiment, unless Pixel Dimensions is less than 0.1 millimeter (as discussed in detail below), it comprises the characteristic pattern polarizing electrode utilizing and be less than 0.1 millimeter.
All column electrodes in every a line are connected to line (shown in Fig. 5).By all row Electrode connection in every a line to alignment (shown in Fig. 5).Every bar alignment and every bar line are connected to electron channel.In the illustrated embodiment of fig. 5, the detector of 16x16 pixel only needs 16+16=32 passage.Position be confirmed as wherein detecting event, the point of crossing of row of channels and row passage.Noise is provided as follows: by the 40*40/32=50 millimeter of crystal by (assuming that electric charge is shared by two electrodes of same pixel) 2the statistical fluctuations that produces of dark current, electron-hole and the single pass electronic noise of twice.
Identical configuration can be expanded to less Pixel Dimensions, such as 0.5x0.5 millimeter pixel.In this case, have 80 row and 80 row, and 160 passages are used.About event of 40 percent will drop on two neighbors, therefore in this embodiment, to 4 passages (two adjacent row and column) summation to produce total electrical charge.Noise is provided as follows: by the 4*40*40/160=40 millimeter of crystal by (4 passages) 2the statistical fluctuations that produces of dark current, electron-hole and the single pass electronic noise of four times.Noise is provided as follows: by the 2*40*40/160=20 millimeter of crystal by (two passages) 2the statistical fluctuations that produces of dark current, electron-hole and the single pass electronic noise of twice.
Therefore, can provide and use more small pixel or the configuration by each expanding channels to be increased number of channels to the pixel of the only part in row (column).Such as shown in Figure 6, number of channels can be made to double by connecting electrode.If reduced to by Pixel Dimensions about 0.1 millimeter (400+400=800 passage), then also can use pixel anode 62a, 62c, 62e, 62f and 62g.
As shown in Figure 9, for the Pixel Dimensions being less than 0.1x0.1 millimeter, at least four pixels to be activated in two or three row and two or three row.It should be noted that the circular electronic cloud assuming 0.1 mm dia.Because activate at least two row and two row, followingly provide subpixel resolution by calculating:
X=（x1*sx1+x2*s2x…）/(sx1+sx2+sx2…),
Wherein x1 (2,3 ...) be first (the second ...) the x position that arranges; And sx1(2,3 ...) be first (the second ...) signal (" 0 " passage for not being activated) measured in row.
Also according to row signal, identical calculating is performed to Y position.It should be noted that and can use different algorithms, such as, be similar to the Anger algorithm that uses in based on PMT detector and the Row-column algorithm as described in detail herein for providing coherent signal to strengthen (CSE).Should also be noted that and adopt this number of channels to reduce and the method (2*40/0.1=800) of increase with Pixel Dimensions, number of channels adds.Number of channels with resolution improve square and increase.Because each passage produces heat, active cooling can be provided.
Connected by the difference between pixel and arrange, can number of channels be reduced.Such as about Fig. 9 and 11 of connection that anode pixels 100 is shown, and as visible herein, each event (such as charge interaction) produces signal at least four adjacent electrodes.Therefore, if activate the unique combinations of four passages, then event location can be limited uniquely.The quantity of the unique combinations of the n item in N by N! / (n! ) 2provide.For the Pixel Dimensions of 0.1 millimeter, the total quantity of position is (40/0.1) 2=160,000.By comparison, the quantity of unique group of 4 passages in 256 is 210,165,935.It should be noted that it may is enough less as 43 passages, because such passage allows more than 160,000 combination.
As shown in Figure 11, nearly 9 passages may be needed to collect all electric charges completely.But as shown in figure 12, compared with electron charge, too large anode can cause electric charge to be only collected on an anode.In this case, the combination of passage can not be used to determine position.If electric charge in particular directions (as in Figure 13) be collected on an anode (pixel 100), then the position along axle can not be interpolated.But as Figure 14, by making anode stagger, the minimum number of the passage activated by event is 5 to 7, which reduces noise.Make anode stagger permission " stretching " configuration (as shown in figure 15), use the anode of rectangular anode (instead of square) or other shape, there is the length breadth ratio up to 1:2 thus further reduce number of channels (number of channels is reduced to original 1/2).
It should be noted that some interelectrode CHARGE DISTRIBUTION and position are non-linear, and can cause reducing the validity of " subpixel interpolation " and the error of precision, and provide complicated linearity correction.By providing less pixel to solve linear problem, but will cause having to sue for peace to many passages, thus add the contribution of electronic noise.As alternative, the electrode configuration of the intertexture of (and as described in detail herein) can be used as shown in Figure 7 to increase linear, allow to increase anode dimension simultaneously.
By using the diode arrangement of the intertexture of Figure 16, the further stretching of anode can be provided, and the ability (and the interpolation added along that axle is linear) of carrying out interpolation along the axle stretched can not be lost.The electric charge that the anode interweaved is collected is approximated to ratio with the overlapping of electric charge " footprint " on that anode.Because electric charge is not uniformly dispersing, which results in departs from linear, correct by linearity correction conversion as known in the art.Along on the axle stretched, determine positional precision by signal to noise ratio (S/N ratio).Thus, the stretching of 1:10 can be provided to preserve effective resolution simultaneously.
Figure 17 shows and utilizes the anode interweaved to determine position with " two combination of pixels ", how one dimension (1D) array with 5 passages allows the length of leap 11 pixels, wherein each pixel can be longer than electric charge size (such as 3 to 10 times), and wherein good resolution is in electric charge footprint.In addition, Figure 18 show utilize combination with the position of interpolation determine all these Combination of Methods to become a tensile axis, intertexture and staggered pixel.
Therefore, refer again to Fig. 4 to 6, pixelated detectors 50 can comprise the subpixellated element of multirow and the multiple row formed by anode pixels 62 and the sub-pixel 63 be shaped.In the illustrated embodiment, pixelated detectors 50 comprises the anode pixels 62 of 16 row and columns, can utilize the crystal of 4 millimeters thick by the size making case of anode pixels 62 as about 0.3 millimeter 2/ pixel.Therefore, use 256 passages relevantly with pixelated detectors 50.Also guide grid 90 can be set around anode pixels 62 to concentrate electric charge to share, i.e. charge cloud between the sub-pixel 63 of anode pixels 62 and/or shaping.As described in detail herein or such as at United States Patent (USP) 5,504, describe in 334, then can determine positional information according to the output summation from row and column.It should be noted that in various embodiments, the size of the sub-pixel 63 of shaping is less than charge cloud (such as desired minimum electron cloud).
In addition, can be anode pixels 62 formalize and differentially arrange.Such as, as shown in Figure 7, the anode pixels 74 of multiple stretching can be provided, define the electrode defining intertexture with the overlapping region 76(of the serrate of adjacent anode pixels 74 or zigzag and configure).Therefore, the pixel edge of intertexture is formed by adjacent anode pixels 74.In this embodiment, anode pixels 62 is made anode pixels 74 be stretched in a dimension by stripping and slicing or cutting, such as in the direction of the x axis.Therefore, anode pixels 74 is elongated in one direction or stretches and makes anode pixels 74 longer than the length along another axle along the length of an axle.Utilize any suitable process, in the substrate cutting or etching anode pixels 74.In certain embodiments, utilize cut, form anode pixels 74, to limit serrate or zigzag pattern by cutting process.Any suitable method can be utilized to perform cut, and it can be provided for etch substrate or by substrate stripping and slicing, such as, can use for photoetching process, etching semiconductor material substrate or any cutting method by this area of semiconductive material substrate stripping and slicing.
Use one or more pixelated detectors of various embodiment, provide pixel arrangement to make CHARGE DISTRIBUTION (such as charge cloud described herein) induced signal (if especially charge interaction is eccentric) on main pixel and on one or more neighbor.Main pixel is confirmed as the pixel with highest signal (such as maximum set becomes electric charge).According to various embodiment, comprise charge information, from have the highest electric charge pixel anode output information (as described in detail above) and from one or more adjacent or contiguous anode (8 such as contiguous anodes), the output information of the anode with low signal intensity is used to determine initial photon and the interactional position of anode.As described in detail herein, this position is determined.
It should be noted that alternatively, the further correcting image distorsion of calibration chart of such as linear graph, energy correction figure and susceptibility figure can be used.As described herein, also depth information can be used for energy correction, if such as charge cloud appears in the three or more pixels in row or column.
Therefore, in certain embodiments, can implementation method 80(as shown in Figure 8) to utilize pixelated detectors to determine the position of charge interaction.Particularly, at 82 places, use the pixelated detectors with Charge controlled as described herein configuration to utilize pixelated detectors acquisition about the charge information of charge interaction.Such as, by providing Charge controlled for anode pixels wherein or sub-pixel setting.
It should be noted that according to various embodiment, reducing dark current, the electric current namely responded in detector when not detecting photon.Such as, negative electrode can be formed to limit detector dark current by current blockade (such as Schottky type) contact, and can thermal detector be added to increase hole charge mobility.In addition, higher bias voltage can be used to collect more electric charge quickly.In addition, use guide grid 90 to reduce anode and collect area, therefore also reduce dark current.
In addition, according to various embodiment, row and column can be used to sue for peace and to obtain charge information.Such as, as described in detail herein, pixel can be divided into the row sequence of partial sums part corresponding with each part of sub-pixel, sub-pixel is shaped and is configured to provide the electric charge between two sub-pixel portion to share.Each pixel portion is attached to printed circuit board (PCB) (PCB), wherein utilizes one of every row and column to read connection and row and column is connected to the prime amplifier that can reside on PCB that is identical or that separate.Each passage comprises threshold test and sample-and-hold circuit.Therefore, when all detecting at row and column passage the event exceeding threshold value, then contiguous row and column digitizing is used for further event handling.
Use connection as shown in Figures 9 and 10 to arrange and can complete summation, Fig. 9 and 10 shows a part for the pixelated detectors of the multiple pixels had for anode pixels 100.Such as, as shown in Figure 9, when anode pixels 100 is configured to provide charge cloud to share as described herein, row and column can be provided to sue for peace.The checkerboard pattern illustrated and anode pixels 100 are only used to explanation.In addition, although merely illustrate 6x6 pixel, pixel but more can be provided as the part of pixelated detectors.Such as, for 4 centimetres of x4 centimetre of modules with 0.5 millimeter of anode pixels spacing, provide 80x80=6400 anode pixels and 160 passages (80 row+80 arrange).
In this embodiment, the electrical connection 102 between pixel (illustrating with point) can be conduction or capacitive, and can comprise for each pixel anode 100 or the prime amplifier of row or column only for suing for peace.Between a pixel anode 100, connection 102 is provided respectively in every row and column.It should be noted that if each pixel anode 100 comprises analog to digital converter (ADC), then the line of connected row pixel or row pixel is the data bus for numeral instead of simulation summation.Should also be noted that (such as 2n scaling) in certain embodiments, in order to from pixel anode 100 read output signal to prime amplifier, the electric capacity of every bar line is significantly less than Preamp capacitors, wherein reduces with the thicker electric capacity of CZT material.
When pixel anode 100 need not be configured to provide (such as guaranteeing) charge cloud to share, connection is as shown in Figure 10 arranged and be can be used for row and column summation, and can be used for less anode pixels.Pixel anode 100(stain illustrates) between electrical connection 104 can be conduction or capacitive.Connection 104 is provided between each anode pixels 100 in every row and column and between every row, column.In addition, with each pixel anode 100 about provide prime amplifier to reduce or to avoid the crosstalk between row and column.It should be noted that if each pixel anode 100 comprises ADC, then the line of connected row pixel or row pixel is the data bus for numeral instead of simulation summation.
Refer again to the method 80 of Fig. 8, such as, use the charge information of the reading being used for one or more anode pixels, then identify the anode pixels sharing electric charge at 84 places.Thereafter, the energy at shared pixel place is determined at 86 places.Such as, all digitized passages are sued for peace to determine the energy of gamma ray or the x-ray event detected.Then determine the position of energy cloud, such as, estimate at 88 places.Especially, because the charge cloud of having a mind to is shared, for each event presents the signal distributions between multiple row of channels and row passage.As described in detail herein, calculate by charge centroid or center of gravity (Anger type) position determining subpixel accuracy.In addition, can storage detector to the response of the pencil beam calibration of scanning, and then determine maximum likelihood position during use.As alternative, for single pixel resolution, peak row and column signal can be used.
Thereafter, the interactional degree of depth (DOI) can be determined at 90 places.Such as, differential time of flight between anode (electronics) and negative electrode (hole) signal can be used to determine DOI.Determine in some embodiment of DOI in explanation, the mobility of hole and electronics is different, differs by more than an order of magnitude.Determine to use the difference (hole capture relevant by the degree of depth causes) in the integrated electric charge of negative electrode and anode or cathode signal rise time according to other DOI of various embodiment.
It should be noted that, as shown in figure 20, also can by cathode pixels (need not with the size identical with anode pixels), this will provide the positional information of redundancy and reduce the paralysis ability of detector, and higher counting rate can be provided, such as use in x-ray application.In addition, little pixelated cathode will be also only responsive to hole.As shown in figure 20, the multiple spaced cathode pixels 140 that negative electrode 38 is formed by multiple contact is formed.Illustrated embodiment is measurement event in three-dimensional (3D), namely adds DOI information.Use this configuration, the rise time by the cathode pixels 140 of the time delay (Δ t) between measuring-signal 142 and signal 144 or integration ratio or summation determines DOI.The pencil beam of the side such as entering detector can be used calibrate the DOI relative with the mistiming.It should be noted that the different mobility [mu] having e-and h+ charge carrier.Should also be noted that can use to block contact and heat and increase hole mobility.
Therefore, use various embodiment and refer again to such as Fig. 7, detection is as shown the charge cloud for electron cloud 110, and charge cloud such as collides an anode pixels 74 and at least one other anode pixels in overlapping region 76.It should be noted that for the purpose of simple declaration, electron cloud 110 is illustrated as circular.Therefore, use various embodiment, such as, by increasing likelihood or guaranteeing that electron cloud 110 collides the quantity of electric charge that at least two different anode pixels 74 control to arrive anode in overlapping region 76.
Such as, as shown in figure 16, configuration can form the anode pixels 74 of the part of Anger gamma camera, makes by least two anode pixels 74 and is that three or more anode pixels 74 detects each electron cloud 110 sometimes.Exemplarily, the size of electron cloud 110 is 1 millimeter, and anode pixels 74 is about 0.4 millimeter to 1.0 millimeters.
In other embodiments, such as, as shown in figure 17, output channel is reduced further by the paired jointed anode pixel 74 illustrated by the numeral of arranging anode pixels 74 and as above surface anode pixel 74.As depicted, 5 passages limit 10 antianode pixels 74, and it can be arranged to detector tlv triple, i.e. triplets.It is additional right that additional passage can limit, and such as 7 passages limit 21 antianode pixels 74.
As shown in figure 18, the anode pixels 74 with overlapping region 76 can also be realized in two-dimensional arrangement.As shown, array anode pixels 74 is offset in 120 in every line or stagger make in every line 120 in the direction of the x axis overlapping region 76 be in different positions.In embodiment shown in this, electron cloud 110 can collide two or more anode pixels 74 in overlapping region 76.In addition, contiguous anode pixels 74 can experience less charge effect.In this embodiment, the size of the width (W) of row 120 is decided to be the desired size approximating greatly electron cloud 110(such as electron cloud 110), be expert in 102 simultaneously, anode pixels 74 can be stretched as many times of the size of electron cloud 110, such as four times large or more.
Contemplate change and amendment.Such as, as shown in figure 19, the resistive layer being depicted as resistance-type anode 130 is set between substrate 32 and anode 34, such as, on substrate 32, forms resistive layer by the deposition process of this area.In this embodiment, by being set to the resistance-type anode 130 of resistive layer, in anode 34(and contact) between scatter electric charge.In CZT application, the resistance of resistance-type anode 130 is less than the resistance of the CZT material forming substrate 32.
As another example, and as shown in figure 21, can provide detector 150, it is configured to the sandwich detector of the common cathode 152 had between two substrate layers 154 and 156, forms two-layer detector accordingly.In an illustrated embodiment, multiple pixelated anode 158 is formed on substrate layer 154 and multiple pixelated anode 160 is formed on substrate layer 156.
As another example, can provide as shown in figure 22, the multilayer halved belt detector 170 of the multiple substrate layers 172 with the diode limited between anode 174 and negative electrode 176.Multilayer halved belt detector 170 can be divided into even number plane as shown in the figure and odd number plane.
Further contemplate the change to the system with pixelated detectors and amendment.Such as in x-ray transmission application, the power of radiation source can be reduced to increase the size of charge cloud.Therefore, the pixel with larger overall size can be used.
Therefore, various embodiment provides pixelated detectors, makes to detect charge cloud by least two pixel anode of pixelated detectors.Therefore, provide the configuration of pixelated detectors, wherein have the relation between the position of charge cloud and corresponding anode signal.In various embodiments, can be detector pixel setting, sizing, division and/or location to allow at least two pixel detection charge clouds.Additional element can be provided to facilitate detection, such as linear resistance plate.
The pixelated detectors of various embodiment can be provided as the part of dissimilar imaging system, such as NM imaging system, wherein as positron emission computerized tomography (PET) imaging system, SPECT imaging system and/or x-ray imaging system and CT imaging system.Such as, Figure 23 is the skeleton view of the exemplary embodiment of the medical image system 210 built according to various embodiment, and it is SPECT imaging system in this embodiment.System 210 comprises integrated saddle 212, and saddle 212 comprises the rotor 214 around saddle center pit 232 orientation further.Rotor 214 is configured to support one or more NM pixelation camera 218(and shows two cameras 218), such as but not limited to gamma camera, SPECT detector, multilayer pixelation camera (such as Compton camera) and/or pet detector.It should be noted that when medical image system 210 comprises CT camera or x-ray camera, medical image system 210 also comprises x-ray tube (not shown) for launching x-ray radiation towards detector.In various embodiments, camera 218 is formed by pixelated detectors as described in detail herein.Rotor 214 is configured to axially rotate around inspection axle 219 further.
Patient table 220 can comprise the bed 222 being coupled to a support system 224 slidably, and bed support system 224 can be directly coupled to floor or the base 226 by being coupled to saddle 212 is coupled to saddle 212.Bed 222 can comprise the stretcher 228 of the upper surface 230 being coupled to bed 222 slidably.Patient table 220 is configured to facilitate patient's (not shown) to pass in and out the inspection position of arranging in a line with inspection axle 219 in fact.During image scanning, patient table 220 can be controlled so that moving bed 222 and/or stretcher 228 axially manhole appendix 232.Any mode known in the art can perform operation and the control of imaging system 210.It should be noted that can realize various embodiment relevantly with the imaging system comprising rotating gantry or stationary gantry.
Figure 24 illustrates the block diagram of the imaging system 250 of multiple pixelation imaging detectors having and to be arranged on saddle, to configure according to various embodiment.It should be noted that imaging system can also be multi-mode imaging system, such as NM/CT imaging system.The imaging system 250 being illustrated as SPECT imaging system generally includes and is arranged on multiple pixelation imaging detector 252 on saddle 256 and 254(shows two).It should be noted that and additional imaging detector can be provided.Imaging detector 252 and 254 is located in multiple position (such as with L-pattern configurations) relative to the patient 258 in the hole 260 of saddle 256.Patient 258 is supported on patient table 262, make it possible to gather specially in patient 258 body pay close attention to radiation or the imaging data of structure (such as heart).It should be noted that, although imaging detector 252 and 254 is arranged to the movable operation along (or around) saddle 256, but in some imaging system, imaging detector is fixedly attached to saddle 256 and on fixed position, such as in pet imaging systems (ring of such as imaging detector).Should also be noted that imaging detector 252 and 254 can be formed by different materials as described herein and provide with difference configuration known in the art.
One or more collimating apparatus can be set before the radiation detection face (not shown) of one or more imaging detector 252 and 254.Imaging detector 252 and 254 obtains the 2D image that can be defined by the position of x and the y position of pixel and imaging detector 252 and 254.Make radiation detection face (not shown) towards the patient 258 that can be such as human patients or animal.It should be noted that shape that can be different configures saddle 256, such as, as " C ", " H " or " L ".
Control module 264 can control patient table 262 relative to the movement of imaging detector 252 and 254 and location and imaging detector 252 and 254 relative to the movement of patient 258 and location, so that in the dissection desired by the field of view (FOV) inner position patient 258 of imaging detector 252 and 254, this can perform before the image obtaining the dissection paid close attention to.Control module 264 can have separately can by processing unit 268 autocommand, by operator's Non-follow control or its platform controller 264 combined and gantry motor controller 266.Platform controller 264 movable patient platform 258 is so that relative to the FOV position patient 258 of imaging detector 252 and 254.In addition, or alternatively, under the control of gantry motor controller 266, imaging detector 252 and 254 can be made to move relative to patient 258, to locate or directed or rotate around patient 258.
Imaging data can be combined and be reconstructed into the image that can comprise 2D image, 3D volume or 3D volume (4D) in time.
As described in detail herein, data acquisition system (DAS) (DAS) 270 receives the simulation and/or digital telecommunication number that are produced by imaging detector 252 and 254, and decoded data is used for subsequent treatment.Image reconstruction processor 272 receives the data from DAS 270, and uses any process of reconstruction known in the art to rebuild image.Data storage device 274 can be provided to store the view data of data from DAS 270 or reconstruction.Input media 276 also can be provided to receive user's input and display 278 can be provided to show the image of reconstruction.
In addition, as described in detail herein, Charge sites determination module 280 can be provided to determine the position of electric charge or the charge cloud produced by photon (such as launching gamma-ray photon or transmission x-ray photon).Charge sites determination module 280 can realize in software, hardware or its combination.
Various embodiment and/or parts, such as module or parts wherein and controller, also can be embodied as the part of one or more computing machine or processor.Computing machine or processor can comprise calculation element, input media, display unit and such as accessing the interface of internet.Computing machine or processor can comprise microprocessor.Microprocessor can be connected to communication bus.Computing machine or processor also can comprise storer.Storer can comprise random-access memory (ram) and ROM (read-only memory) (ROM).Computing machine or processor also can comprise memory storage, and memory storage can be hard disk drive or mobile storage means, such as floppy disk driver, CD drive etc.Memory storage can also be for by computer program or other instruction load to other similar devices in computing machine or processor.
As used herein, term " computing machine " or " module " can comprise comprising and use microcontroller, risc (RISC), ASICs, logical circuit and can perform any based on processor or the system based on microprocessor of other circuit any of function described herein or the system of processor.Above example is only exemplary, does not therefore intend to limit by any way definition and/or the implication of term " computing machine ".
Computing machine or processor perform the instruction set be stored in one or more memory element, so that process input data.Memory element also can store data or out of Memory according to the expectations or needs.Memory element can be the form of the physical memory element in information source or processor.
Instruction set can comprise the various orders indicated as the computing machine of processor or the specific operation of the processor execution such as Method and Process of various embodiment.Instruction set can be the form of software program.Software can be various forms, such as system software or application software.In addition, software can be the form of a part for program module in set, the more large program of stand-alone program or module or program module.Software also can comprise the modeled programming of the form of Object-oriented Programming Design.Can operation response person order or respond the result of first pre-treatment or respond the request that another processor makes by the process of the input data of processor.
As used herein, term " software " and " firmware " are interchangeable, comprise any computer program of storage in memory for being performed by computing machine, storer comprises RAM storer, ROM storer, eprom memory, eeprom memory and non-volatile RAM (NVRAM) storer.Above type of memory is only exemplary, does not therefore limit about the type of memory for storing computer program.
Will be understood that, above description is intended to illustrative, instead of restrictive.Such as above-described embodiment (and/or aspect wherein) can be combined with each other use.In addition, many amendments can be carried out be suitable for the instruction of various embodiment to make specific situation or material and their scope can not be deviated from.Although the overall size of material described herein and type are used to the parameter limiting various embodiment, the embodiment that embodiment is restrictive but exemplary anything but.When browsing foregoing description, other embodiments many will be apparent for a person skilled in the art.Therefore, should with reference to appending claims, the scope determining various embodiment together with the four corner of the equivalent of such claim institute entitle.In the appended claims, term " comprises (including) " and " wherein (in which) " " comprises (comprising) " as corresponding term and the simple English equivalent of " wherein (wherein) " uses.In addition, in claims below, term " first (first) ", " second (second) " and " the 3rd (third) " etc., only with marking, do not intend numerical requirements to force on their object.In addition, the restriction of following claim book is not write as device and is added function form, do not intend to make an explanation based on 35 U.S.C. § 112 the 6th section yet, unless and until such claim limit employ significantly phrase " (means for) parts, for ... " lack further structure with there being function statement below.
This written description uses example to disclose the various embodiments comprising preferred forms, and makes those skilled in the art can implement various embodiment, comprises the method manufacturing and use any device or system and perform any merging.The scope of patenting of various embodiment is limited by claims, and can comprise other example that those skilled in the art expect.If other such example has there is no different textural elements from the literal language of claims, if or other such example comprises the textural element be equal to that there is no substantial differences with the literal language of claims, then other such example is determined to be within the scope of claims.

Claims (12)

1. a pixelation solid state optical detectors, comprising:
Semiconductor substrate;
Multiple anode pixels on a surface of described Semiconductor substrate, each in described anode pixels is divided into multiple sub-pixel; And
Negative electrode on another surface of the described Semiconductor substrate contrary with described multiple anode pixels.
2. pixelation solid state optical detectors according to claim 1, wherein said negative electrode comprises pixelated cathode.
3. pixelation solid state optical detectors according to claim 1, each in wherein said sub-pixel forms the anode pixels of common square shape.
4. pixelation solid state optical detectors according to claim 1, also comprises the multiple substrate layers separated by common cathode.
5. pixelation solid state optical detectors according to claim 1, is wherein divided into two sub-pixels by each in described anode pixels.
6. pixelation solid state optical detectors according to claim 1, also comprises the guide grid around described multiple pixel.
7. pixelation solid state optical detectors according to claim 1, wherein said multiple pixel is included in interconnective anode pixels in multiple row and column.
8. a pixelation solid state optical detectors, comprising:
Semiconductor substrate;
Multiple anode pixels on a surface of described Semiconductor substrate, described anode pixels has tensile elongation at least one direction, and comprises the overlapping region between described anode pixels, and described overlapping region has zigzag arrangement; And
Negative electrode on another surface of the described Semiconductor substrate contrary with described multiple anode pixels.
9. pixelation solid state optical detectors according to claim 8, wherein said overlapping region arranges with two-dimensional arrangement.
10. pixelation solid state optical detectors according to claim 8, also comprises the multirow anode pixels with tensile elongation.
11. pixelation solid state optical detectors according to claim 8, the described anode pixels wherein with tensile elongation is connected in couples.
12. pixelation solid state optical detectors according to claim 8, wherein said overlapping region forms configuration and makes to detect CHARGE DISTRIBUTION to determine that electric charge shares information by least two anode pixels in described multiple anode pixels, and described electric charge shares CHARGE DISTRIBUTION described in information definition and the described interactional position of multiple anode pixels.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108291976A (en) * 2015-11-20 2018-07-17 皇家飞利浦有限公司 Probe value determines system
CN108351425A (en) * 2015-07-09 2018-07-31 皇家飞利浦有限公司 Device and method for being carried out at the same time x-ray imaging and gammaphoton imaging using stacked type photodetector
CN108496065A (en) * 2016-02-10 2018-09-04 国立研究开发法人情报通信研究机构 Signal processing circuit
CN111863847A (en) * 2020-07-23 2020-10-30 湖南正芯微电子探测器有限公司 Comb-shaped silicon pixel detection unit and comb-shaped silicon pixel detector

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8405038B2 (en) * 2009-12-30 2013-03-26 General Electric Company Systems and methods for providing a shared charge in pixelated image detectors
US8466420B2 (en) * 2010-06-04 2013-06-18 General Electric Company Charge loss correction
FR2972268B1 (en) * 2011-03-01 2013-03-29 Sagem Defense Securite HIGH-RESOLUTION COMPACT GAMMA SURGE SURVEILLANCE DETECTOR
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
WO2013012809A1 (en) * 2011-07-15 2013-01-24 Brookhaven Science Associates, Llc Radiation detector modules based on multi-layer cross strip semiconductor detectors
US9423515B2 (en) 2011-08-30 2016-08-23 Koninklijke Philips N.V. Photon counting detector
WO2013041114A1 (en) * 2011-09-21 2013-03-28 Cern - European Organization For Nuclear Research A single layer 3d tracking semiconductor detector
DE102011083832B4 (en) * 2011-09-30 2013-07-18 Siemens Aktiengesellschaft A method of obtaining an X-ray image with a direct-converting counting X-ray detector and direct-converting counting X-ray detector
DE102011085080A1 (en) * 2011-10-24 2013-04-04 Siemens Ag Method and device for detecting x-ray quanta
EP2613178A3 (en) * 2011-11-25 2014-08-06 Albert-Ludwigs-Universität Freiburg Detector and method for detection of ionising radiation
FR2996648A1 (en) * 2012-10-08 2014-04-11 Commissariat Energie Atomique METHOD AND DEVICE FOR DETECTING IONIZING RADIATION BY A PIXELLIZED PHOTODETECTOR
RU2015126867A (en) * 2012-12-04 2017-01-11 Конинклейке Филипс Н.В. X-RAY DETECTOR WITH PHOTON COUNT
DE102013202630B4 (en) * 2013-02-19 2017-07-06 Siemens Healthcare Gmbh Radiation detector and medical diagnostic system
US9002084B2 (en) 2013-08-30 2015-04-07 Ge Medical Systems Israel, Ltd Systems and methods for summing signals from an imaging detector
DE102014201772B4 (en) * 2014-01-31 2017-10-12 Siemens Healthcare Gmbh Direct-conversion X-ray detector, CT system and method
DE102014207324A1 (en) * 2014-04-16 2015-10-22 Siemens Aktiengesellschaft Direct conversion X-ray detector and CT system
JP6355747B2 (en) * 2014-10-16 2018-07-11 株式会社日立製作所 Radiation detector, radiation imaging apparatus, computed tomography apparatus, and radiation detection method
JP6670305B2 (en) * 2014-10-17 2020-03-18 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． PET detector scintillator arrangement using light sharing and interaction depth estimation
JP6262919B2 (en) * 2014-12-05 2018-01-17 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． X-ray detector device for detecting X-ray radiation at an inclination angle
RU2705717C2 (en) * 2014-12-17 2019-11-11 Конинклейке Филипс Н.В. Detector and method for detecting ionizing radiation
US20160206255A1 (en) * 2015-01-16 2016-07-21 Kabushiki Kaisha Toshiba Hybrid passive/active multi-layer energy discriminating photon-counting detector
US9927539B2 (en) 2015-02-20 2018-03-27 General Electric Company Systems and methods for improving imaging by sub-pixel calibration
US9696440B2 (en) * 2015-02-20 2017-07-04 General Electric Company Systems and methods for improving energy resolution by sub-pixel energy calibration
US9482764B1 (en) 2015-05-28 2016-11-01 General Electric Company Systems and methods for charge-sharing identification and correction using a single pixel
US9891328B2 (en) * 2015-09-30 2018-02-13 General Electric Company Systems and methods for reduced size detector electronics
US10529753B2 (en) 2015-11-03 2020-01-07 Sensors Unlimited, Inc. Pixels
US10122946B2 (en) * 2015-11-11 2018-11-06 Fei Company Method for detecting particulate radiation
WO2017120201A1 (en) 2016-01-05 2017-07-13 Board Of Regents, The University Of Texas System Apparatus and methods for optical emission detection
US10408951B2 (en) * 2016-01-29 2019-09-10 Board Of Trustees Of Michigan State University Radiation detector
EP3433639A1 (en) * 2016-03-23 2019-01-30 Koninklijke Philips N.V. Nano-material imaging detector with an integral pixel border
CN108271411B (en) * 2016-03-31 2021-10-15 株式会社蛟簿 X-ray detection system, X-ray device, and device and method for processing X-ray detection data
US10393891B2 (en) * 2016-05-03 2019-08-27 Redlen Technologies, Inc. Sub-pixel segmentation for semiconductor radiation detectors and methods of fabricating thereof
KR101769476B1 (en) 2016-06-16 2017-08-18 한국과학기술원 Apparatus and method for increasing spatial resolution of medical image using charge sharing
CN106324649B (en) * 2016-08-31 2023-09-15 同方威视技术股份有限公司 semiconductor detector
DE102016221481B4 (en) 2016-11-02 2021-09-16 Siemens Healthcare Gmbh Radiation detector with an intermediate layer
US10156645B2 (en) * 2016-12-23 2018-12-18 General Electric Company Systems and methods for sub-pixel location determination at sidewalls and corners of detectors
US9983320B1 (en) 2017-05-15 2018-05-29 General Electric Company Systems and methods for improved collimation sensitivity
US10145964B1 (en) 2017-05-15 2018-12-04 General Electric Company Systems and methods for improved collimation sensitivity
US10324200B2 (en) 2017-05-15 2019-06-18 General Electric Company Systems and methods for improved collimation sensitivity
EP3659513B1 (en) * 2017-06-05 2021-08-11 General Electric Company Methods for improving imaging by sub-pixel calibration
EP3658960B1 (en) * 2017-07-26 2022-09-07 Shenzhen Xpectvision Technology Co., Ltd. X-ray detector capable of managing charge sharing at its periphery
US10205033B1 (en) * 2017-12-14 2019-02-12 Sensl Technologies Ltd. ESD protected semiconductor photomultiplier
RU2672039C1 (en) * 2017-12-27 2018-11-08 Объединенный Институт Ядерных Исследований (Оияи) Planar semiconductor detector
US10324202B1 (en) * 2018-01-02 2019-06-18 General Electric Company Systems and methods for collecting radiation detection
US10254163B1 (en) 2018-03-15 2019-04-09 Kromek Group, PLC Interaction characteristics from a plurality of pixels
US10627530B2 (en) * 2018-05-07 2020-04-21 Ka Imaging Inc. Method and apparatus for a high resolution, high speed radiation imaging
KR102069306B1 (en) * 2018-06-04 2020-01-22 세종대학교산학협력단 Method and apparatus for detecting radiation using cadmium zinc telluride sensor
US10761224B2 (en) 2018-06-06 2020-09-01 General Electric Company Systems and methods for improved detector assembly sizing
US11169286B2 (en) 2018-06-18 2021-11-09 Redlen Technologies, Inc. Methods of calibrating semiconductor radiation detectors using K-edge filters
US10481285B1 (en) 2018-08-13 2019-11-19 General Electric Company Systems and methods for determination of depth of interaction
US10976452B2 (en) 2018-08-13 2021-04-13 General Electric Medical Systems Israel, Ltd. (Il) Systems and methods for improved medical imaging
US10591619B2 (en) 2018-08-15 2020-03-17 GE Precision Healthcare LLC Anodes for improved detection of non-collected adjacent signals
US10247834B1 (en) 2018-08-15 2019-04-02 General Electric Company Anodes for improved detection of non-collected adjacent signal
JP7391499B2 (en) * 2018-09-05 2023-12-05 キヤノンメディカルシステムズ株式会社 Radiation detector, radiation diagnostic equipment, and charge sharing determination method
EP3847481B1 (en) * 2018-09-07 2023-11-29 Shenzhen Xpectvision Technology Co., Ltd. A radiation detector
CN109298438B (en) * 2018-09-30 2020-05-19 重庆邮电大学 Semiconductor detector and manufacturing method thereof
US10928527B2 (en) 2018-11-09 2021-02-23 Redlen Technologies, Inc. Charge sharing correction methods for pixelated radiation detector arrays
JP7219887B2 (en) * 2018-11-19 2023-02-09 プリズマティック、センサーズ、アクチボラグ Method and system for enabling estimation of initial point of X-ray photon interaction in a photon-counting X-ray detector
US11372120B2 (en) 2019-08-26 2022-06-28 Redlen Technologies, Inc. Charge sharing correction methods for sub-pixellated radiation detector arrays
WO2021154851A1 (en) * 2020-01-27 2021-08-05 The Johns Hopkins University Photon counting detector
US11255984B2 (en) * 2020-05-07 2022-02-22 Kromek Group, PLC Photon interaction characteristics from a subset of pixels
US11320545B2 (en) 2020-07-07 2022-05-03 GE Precision Healthcare LLC Systems and methods for improved medical imaging
US11092701B1 (en) 2020-07-07 2021-08-17 GE Precision Healthcare LLC Systems and methods for improved medical imaging
JP2023542627A (en) * 2020-09-03 2023-10-11 ザ・リサーチ・ファウンデーション・フォー・ザ・ステイト・ユニヴァーシティ・オブ・ニューヨーク Systems and methods for crystal-channel coupling
FR3125338B1 (en) * 2021-07-14 2023-11-03 Commissariat Energie Atomique Method for forming a sub-pixelated gamma image, taking into account spatial non-uniformity of sensitivity.
IT202200002993A1 (en) * 2022-02-17 2023-08-17 Istituto Naz Fisica Nucleare SILICON SENSORS WITH RESISTIVE READING WITHOUT IMAGE DISTORTION
EP4235226A1 (en) 2022-02-24 2023-08-30 Koninklijke Philips N.V. Radiation detector and detection method
US11860319B2 (en) 2022-03-10 2024-01-02 GE Precision Healthcare LLC High-resolution detector having a reduced number of pixels

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825033A (en) * 1996-10-31 1998-10-20 The Arizona Board Of Regents On Behalf Of The University Of Arizona Signal processing method for gamma-ray semiconductor sensor
US5847398A (en) * 1997-07-17 1998-12-08 Imarad Imaging Systems Ltd. Gamma-ray imaging with sub-pixel resolution
US20020079456A1 (en) * 1995-10-13 2002-06-27 Digirad Corporation, A California Corporation Semiconductor radiation detector with enhanced charge collection
US20040195512A1 (en) * 2000-05-16 2004-10-07 Crosetto Dario B. Method and apparatus for anatomical and functional medical imaging
US20050098730A1 (en) * 2002-04-02 2005-05-12 Kazuma Yokoi Radiation detector and radiation apparatus
US20090086070A1 (en) * 2007-10-02 2009-04-02 Olympus Corporation Solid-state imaging apparatus
CN102782524B (en) * 2009-12-30 2015-08-26 通用电气公司 For providing the system and method for shared electric charge in pixelation image detector

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2255702B1 (en) * 1973-12-21 1976-10-08 Commissariat Energie Atomique
JPH02108992A (en) * 1988-10-18 1990-04-20 Toshiba Corp Radiation detector and radiation detecting device using same
JPH0619466B2 (en) * 1989-09-22 1994-03-16 理化学研究所 Two-dimensional charge position detection electrode
GB9314398D0 (en) * 1993-07-12 1993-08-25 Gen Electric Signal processing in scintillation cameras for nuclear medicine
US5754690A (en) * 1995-10-27 1998-05-19 Xerox Corporation Position sensitive detector based image conversion system capable of preserving subpixel information
IL119875A (en) * 1996-12-20 1999-12-31 Israel State Technique for obtaining sub-pixel spatial resolution and corrected energy determinsation from room temperature solid state gamma and x-ray detectors with segmented readout
FR2759837B1 (en) * 1997-02-14 2001-10-19 Commissariat Energie Atomique DEVICE AND METHOD FOR PROCESSING SIGNALS OF A SEMICONDUCTOR RADIATION DETECTOR
US6169287B1 (en) * 1997-03-10 2001-01-02 William K. Warburton X-ray detector method and apparatus for obtaining spatial, energy, and/or timing information using signals from neighboring electrodes in an electrode array
US20030128324A1 (en) * 2001-11-27 2003-07-10 Woods Daniel D. Pixel size enhancements
US6618185B2 (en) * 2001-11-28 2003-09-09 Micronic Laser Systems Ab Defective pixel compensation method
DE10240062A1 (en) * 2002-08-30 2004-03-11 Philips Intellectual Property & Standards Gmbh detector array
JP4178232B2 (en) * 2003-02-28 2008-11-12 独立行政法人放射線医学総合研究所 Incident position detector
FR2864731B1 (en) * 2003-12-30 2006-02-03 Commissariat Energie Atomique RADIATION DETECTION SYSTEM FOR BETTER EVENT COUNTING
US7508509B2 (en) * 2004-05-04 2009-03-24 Metso Automation Oy Measurement of an object from an image consisting of a pixel matrix
DE102004048962B4 (en) * 2004-10-07 2006-09-21 Siemens Ag Digital x-ray imaging device or method for recording x-ray images in a digital x-ray imaging device
JP4748567B2 (en) * 2005-02-25 2011-08-17 株式会社東芝 Radiation incident position detector
US7692156B1 (en) * 2006-08-23 2010-04-06 Radiation Monitoring Devices, Inc. Beam-oriented pixellated scintillators for radiation imaging
IL191154A0 (en) * 2007-05-04 2008-12-29 Gen Electric Photon counting x-ray detector with overrange logic control
EP2073040A2 (en) * 2007-10-31 2009-06-24 FUJIFILM Corporation Radiation image detector and phase contrast radiation imaging apparatus
US7495228B1 (en) * 2008-03-31 2009-02-24 General Electric Company Dual function detector device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020079456A1 (en) * 1995-10-13 2002-06-27 Digirad Corporation, A California Corporation Semiconductor radiation detector with enhanced charge collection
US5825033A (en) * 1996-10-31 1998-10-20 The Arizona Board Of Regents On Behalf Of The University Of Arizona Signal processing method for gamma-ray semiconductor sensor
US5847398A (en) * 1997-07-17 1998-12-08 Imarad Imaging Systems Ltd. Gamma-ray imaging with sub-pixel resolution
US20040195512A1 (en) * 2000-05-16 2004-10-07 Crosetto Dario B. Method and apparatus for anatomical and functional medical imaging
US20050098730A1 (en) * 2002-04-02 2005-05-12 Kazuma Yokoi Radiation detector and radiation apparatus
US20090086070A1 (en) * 2007-10-02 2009-04-02 Olympus Corporation Solid-state imaging apparatus
CN102782524B (en) * 2009-12-30 2015-08-26 通用电气公司 For providing the system and method for shared electric charge in pixelation image detector

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108351425A (en) * 2015-07-09 2018-07-31 皇家飞利浦有限公司 Device and method for being carried out at the same time x-ray imaging and gammaphoton imaging using stacked type photodetector
CN108351425B (en) * 2015-07-09 2021-09-24 皇家飞利浦有限公司 Apparatus and method for simultaneous X-ray imaging and gamma photon imaging with stacked detectors
CN108291976A (en) * 2015-11-20 2018-07-17 皇家飞利浦有限公司 Probe value determines system
CN108291976B (en) * 2015-11-20 2022-06-24 皇家飞利浦有限公司 Detection value determination system
CN108496065A (en) * 2016-02-10 2018-09-04 国立研究开发法人情报通信研究机构 Signal processing circuit
CN108496065B (en) * 2016-02-10 2020-04-28 国立研究开发法人情报通信研究机构 Signal processing circuit
CN111863847A (en) * 2020-07-23 2020-10-30 湖南正芯微电子探测器有限公司 Comb-shaped silicon pixel detection unit and comb-shaped silicon pixel detector
CN111863847B (en) * 2020-07-23 2024-06-07 湖南脉探芯半导体科技有限公司 Comb-shaped silicon pixel detection unit and comb-shaped silicon pixel detector

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