CN104974316A - Graphene/polymethacrylic acid-2-(N-carbazolyl)ethyl ester brush composite material, and preparation method and application thereof - Google Patents
Graphene/polymethacrylic acid-2-(N-carbazolyl)ethyl ester brush composite material, and preparation method and application thereof Download PDFInfo
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Abstract
The invention discloses a gaphene/polymethacrylic acid-2-(N-carbazolyl)ethyl ester brush composite material with a storage effect, and a preparation method and an application thereof. According to the invention, an initiation group is first introduced to the surface of graphene oxide; with a surface-initiated atom transfer radical polymerization technology, a functional polymer brush is grafted to the surface of graphene oxide; and the obtained material is subjected to a reaction with a reducing agent, such that the graphene/polymer brush composite material is obtained. According to the invention, the functional polymer brush is grafted to the surface of graphene, such that the processing performance of a graphene solution is improved. With the conductivity of graphene, the resistance of the functional polymer brush is reduced. With the interaction between graphene and the polymer brush functional group, the composite material is provided with a good carrier transportation performance. When the composite material provided by the invention is applied as an electrically active intermediate layer for constructing an information storage device, relatively low turn-on voltage, relatively high on/off current ratio and a good stabilizing performance are shown.
Description
Technical field
The invention belongs to information technology and field of new, be specifically related to a kind of Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material with storage effect and its preparation method and application.
Background technology
Along with the develop rapidly of information technology, increasing for the electronic product demand be exceedingly fast storage speed and high storage capacity.Its size that just running into traditional silicon-based semiconductor material and the electron device of preparation thereof reduces the puzzlement reducing the limit with cost.Due to the physical and chemical performance of nano composite material uniqueness, show one's talent in the development of electronic product of future generation gradually.Development work at present based on nano composite material memory device is still in the starting stage, and many-sided problems demand such as the performance of memory device and mechanism solve.Therefore design has the nano composite material of good memory property and the memory device tool constructing stable performance is of great significance.
The exclusive physical and chemical performance of Graphene makes it be expected to replace silicon materials.But Graphene self is difficult to dispersion in the solution, be unfavorable for the Solution processing techniques fabricate devices using low cost.
Summary of the invention
The object of the present invention is to provide a kind of Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material with storage effect and its preparation method and application, described matrix material is formed by surface of graphene oxide grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester, can be used for the memory device that there is lower cut-in voltage, higher switch current ratio and satisfactory stability performance, and the storage behavior of memory device can be realized by the component ratio regulating and controlling matrix material.
To achieve these goals, the technical solution used in the present invention is: a kind of Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material with storage effect, comprises the following steps obtained product:
1) the 2-bromine isobutyl acylbromide of 0.5-1g graphene oxide, 20-50mL and the triethylamine of 10-20mL are dispersed in the organic solvent of 50-100mL, then in ice-water bath, 24-48 hour is reacted, again through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1-0.2g being contained initiating group is dispersed in the N of 5-10mL, in dinethylformamide, under argon gas atmosphere condition, add 3-6mg catalyzer, 0.5-1.2mg anti-activator, 0.15-0.3mmol part, 1.2-2mmol methacrylic acid-2-(N-carbazyl) ethyl ester, isothermal reaction 18-36 hour at 60-70 DEG C, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1-0.2g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30-50mL water, add 0.5-0.8g reductive agent, isothermal reaction 18-24 hour at 80-90 DEG C, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
In such scheme, described organic solvent is trichloromethane or DMF.
In such scheme, described catalyzer is cuprous chloride or cuprous bromide.
In such scheme, described anti-activator is cupric chloride or cupric bromide.
In such scheme, described part is bipyridine or five methyl diethylentriamine.
In such scheme, described reductive agent is xitix or tea-polyphenol.
Above-mentioned a kind of preparation method with Graphene/polymethyl acrylic acid-2-(N-carbazyl) the ethyl ester brush matrix material of storage effect, comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 0.5-1g graphene oxide, 20-50mL and the triethylamine of 10-20mL are dispersed in the organic solvent of 50-100mL, then in ice-water bath, 24-48 hour is reacted, again through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1-0.2g being contained initiating group is dispersed in the N of 5-10mL, in dinethylformamide, under argon gas atmosphere condition, add 3-6mg catalyzer, 0.5-1.2mg anti-activator, 0.15-0.3mmol part, 1.2-2mmol methacrylic acid-2-(N-carbazyl) ethyl ester, isothermal reaction 18-36 hour at 60-70 DEG C, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1-0.2g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30-50mL water, add 0.5-0.8g reductive agent, isothermal reaction 18-24 hour at 80-90 DEG C, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
Electroactive middle-tier application is can be used as in preparing information recording device according to the Graphene with storage effect/polymethyl acrylic acid-2-(N-carbazyl) the ethyl ester brush matrix material that such scheme obtains, specifically comprise the following steps: Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is scattered in N, in dinethylformamide, spin-coating is (lower electrode) on conductive ITO/glass; Then on this ito glass evaporation metal aluminium as the top electrode of memory device.
Obtained information recording device is carried out memory property test, and result shows that the information recording device obtained has lower cut-in voltage, higher switch current ratio and satisfactory stability performance.
Beneficial effect of the present invention is:
1) by graphenic surface grafting functional polymer brush, improve the solution processability energy of Graphene, be easy to film forming, easy to use.
2) polymerization process adopted is living control polymerization, and graft polymerization density is high, and can control the polymerization degree and thickness etc. of polymer brush.
3) functional polymer brush is firmly connected to graphenic surface by carbon-carbon bond, avoids may occurring in actual applications both skewness and situation about being separated.
4) electroconductibility of Graphene reduces the resistivity of functional polymer brush, and the conjugation between Graphene and the carbazole group contained by polymer brush, makes matrix material have good carrier transmission performance.
5) matrix material that the present invention obtains is applied to prepares information recording device, can show lower cut-in voltage, higher switch current ratio and satisfactory stability performance, and the storage behavior of memory device can be realized by the component ratio regulating and controlling matrix material.
Embodiment
For a better understanding of the present invention, illustrate content of the present invention further below in conjunction with specific embodiment, but content of the present invention is not only confined to the following examples.
Embodiment 1
Have Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, its preparation method comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 0.5g graphene oxide, 30mL and the triethylamine of 15mL are dispersed in the DMF of 50mL, in ice-water bath, react 24h, then through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1g being contained initiating group is dispersed in the N of 5mL, in dinethylformamide, 3mg cuprous bromide, 0.5mg cupric bromide, 0.15mmol five methyl diethylentriamine and 1.2mmol methacrylic acid-2-(N-carbazyl) ethyl ester is added respectively under argon gas atmosphere condition, be heated to 60 DEG C of isothermal reaction 24h, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30mL water, add 0.5g xitix, be heated to 90 DEG C of isothermal reaction 18h, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
Embodiment 2
Have Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, its preparation method comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 0.6g graphene oxide, 20mL and the triethylamine of 10mL are dispersed in the trichloromethane of 60mL, in ice-water bath, react 24h, then through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1g being contained initiating group is dispersed in the N of 6mL, in dinethylformamide, 4mg cuprous chloride, 0.6mg cupric chloride, 0.2mmol five methyl diethylentriamine and 1.5mmol methacrylic acid-2-(N-carbazyl) ethyl ester is added respectively under argon gas atmosphere condition, be heated to 65 DEG C of isothermal reaction 24h, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30mL water, add 0.6g tea-polyphenol, be heated to 90 DEG C of isothermal reaction 20h, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
Embodiment 3
Have Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, its preparation method comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 0.5g graphene oxide, 20mL and the triethylamine of 20mL are dispersed in the DMF of 70mL, in ice-water bath, react 36h, then through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.15g being contained initiating group is dispersed in the N of 8mL, in dinethylformamide, 3mg cuprous bromide, 0.7mg cupric bromide, 0.25mmol bipyridine and 1.2mmol methacrylic acid-2-(N-carbazyl) ethyl ester is added respectively under argon gas atmosphere condition, be heated to 60 DEG C of isothermal reaction 20h, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.15g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30mL water, add 0.5g tea-polyphenol, be heated to 90 DEG C of isothermal reaction 18h, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
Embodiment 4
Have Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, its preparation method comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 0.8g graphene oxide, 40mL and the triethylamine of 20mL are dispersed in the DMF of 70mL, in ice-water bath, react 48h, then through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1g being contained initiating group is dispersed in the N of 7mL, in dinethylformamide, 5mg cuprous chloride, 0.5mg cupric chloride, 0.2mmol five methyl diethylentriamine and 1.6mmol methacrylic acid-2-(N-carbazyl) ethyl ester is added respectively under argon gas atmosphere condition, be heated to 70 DEG C of isothermal reaction 30h, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30mL water, add 0.5g xitix, be heated to 90 DEG C of isothermal reaction 24h, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
Embodiment 5
Have Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, its preparation method comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 1g graphene oxide, 50mL and the triethylamine of 20mL are dispersed in the trichloromethane of 80mL, in ice-water bath, react 48h, then through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1g being contained initiating group is dispersed in the N of 6mL, in dinethylformamide, 4mg cuprous bromide, 0.6mg cupric bromide, 0.15mmol bipyridine and 1.5mmol methacrylic acid-2-(N-carbazyl) ethyl ester is added respectively under argon gas atmosphere condition, be heated to 60 DEG C of isothermal reaction 24h, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30mL water, add 0.6g tea-polyphenol, be heated to 90 DEG C of isothermal reaction 24h, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
Embodiment 6
Have Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, its preparation method comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 0.8g graphene oxide, 45mL and the triethylamine of 15mL are dispersed in the DMF of 75mL, in ice-water bath, react 24h, then through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.15g being contained initiating group is dispersed in the N of 10mL, in dinethylformamide, 6mg cuprous chloride, 1.2mg cupric chloride, 0.3mmol five methyl diethylentriamine and 2mmol methacrylic acid-2-(N-carbazyl) ethyl ester is added respectively under argon gas atmosphere condition, be heated to 60 DEG C of isothermal reaction 30h, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.15g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 40mL water, add 0.5g xitix, be heated to 90 DEG C of isothermal reaction 18h, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
Embodiment 7
Have Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, its preparation method comprises the following steps:
1) the 2-bromine isobutyl acylbromide of 0.6g graphene oxide, 30mL and the triethylamine of 10mL are dispersed in the DMF of 50mL, in ice-water bath, react 36h, then through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.15g being contained initiating group is dispersed in the N of 6mL, in dinethylformamide, 4mg cuprous bromide, 0.7mg cupric bromide, 0.15mmol five methyl diethylentriamine and 1.8mmol methacrylic acid-2-(N-carbazyl) ethyl ester is added respectively under argon gas atmosphere condition, be heated to 65 DEG C of isothermal reaction 24h, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.15g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30mL water, add 0.5g tea-polyphenol, be heated to 90 DEG C of isothermal reaction 20h, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
The Graphene with storage effect/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material obtained for embodiment 1 is applied to and prepares information recording device and carry out performance test experiment, concrete steps and test result as follows: get 1mg matrix material and be dissolved in 10ml N, in dinethylformamide, spin-coating is on conductive ITO/glass, the thickness of composite material film is 100nm, then on this conductive ITO/glass, evaporation thickness is the top electrode of metallic aluminium as memory device of 150nm, obtains described information recording device.The cut-in voltage measuring gained information recording device is 1.5V and switch current ratio 5.3 × 10
4.Result shows that this information recording device has corresponding cut-in voltage, switch current ratio and satisfactory stability performance.
The Graphene with storage effect/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material obtained for embodiment 2 is applied to and prepares information recording device and carry out performance test experiment, concrete steps and test result as follows: get 1mg matrix material and be dissolved in 10ml N, in dinethylformamide, spin-coating is on conductive ITO/glass, the thickness of composite material film is 150nm, then on this conductive ITO/glass, evaporation thickness is the top electrode of metallic aluminium as memory device of 200nm, obtains described information recording device.The cut-in voltage measuring gained information recording device is 1.8V and switch current ratio 3.7 × 10
4.Result shows that this information recording device has corresponding cut-in voltage, switch current ratio and satisfactory stability performance.
Each raw material cited by the present invention can realize the present invention, and the bound value of each raw material, interval value can realize the present invention; Embodiment is not enumerated at this.The foregoing is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise of the invention, make some improvement and conversion, these all belong to protection scope of the present invention.
Claims (8)
1. there is Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material for storage effect, it is characterized in that, comprise the following steps obtained product:
1) the 2-bromine isobutyl acylbromide of 0.5-1g graphene oxide, 20-50mL and the triethylamine of 10-20mL are dispersed in the organic solvent of 50-100mL, then in ice-water bath, 24-48 hour is reacted, again through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1-0.2g being contained initiating group is dispersed in the N of 5-10mL, in dinethylformamide, under argon gas atmosphere condition, add 3-6mg catalyzer, 0.5-1.2mg anti-activator, 0.15-0.3mmol part and 1.2-2mmol methacrylic acid-2-(N-carbazyl) ethyl ester, isothermal reaction 18-36 hour at 60-70 DEG C, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1-0.2g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30-50mL water, add 0.5-0.8g reductive agent, isothermal reaction 18-24 hour at 80-90 DEG C, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
2. Graphene according to claim 1/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material, it is characterized in that, described organic solvent is trichloromethane or DMF.
3. Graphene according to claim 1/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material, it is characterized in that, described catalyzer is cuprous chloride or cuprous bromide.
4. Graphene according to claim 1/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material, it is characterized in that, described anti-activator is cupric chloride or cupric bromide.
5., according to Graphene according to claim 1/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material, it is characterized in that, described part is bipyridine or five methyl diethylentriamine.
6., according to Graphene according to claim 1/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material, it is characterized in that, described reductive agent is xitix or tea-polyphenol.
7. the preparation method of the Graphene with storage effect/polymethyl acrylic acid-2-(N-carbazyl) the ethyl ester brush matrix material described in any one of claim 1-6, is characterized in that, comprise the following steps:
1) the 2-bromine isobutyl acylbromide of 0.5-1g graphene oxide, 20-50mL and the triethylamine of 10-20mL are dispersed in the organic solvent of 50-100mL, then in ice-water bath, 24-48 hour is reacted, again through centrifugal, washing and dry, must graphene oxide containing initiating group;
2) graphene oxide 0.1-0.2g being contained initiating group is dispersed in the N of 5-10mL, in dinethylformamide, under argon gas atmosphere condition, add 3-6mg catalyzer, 0.5-1.2mg anti-activator, 0.15-0.3mmol part and 1.2-2mmol methacrylic acid-2-(N-carbazyl) ethyl ester, isothermal reaction 18-36 hour at 60-70 DEG C, then through centrifugal, washing and dry, the graphene oxide of surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is obtained;
3) graphene oxide of 0.1-0.2g surface grafting polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush is dispersed in 30-50mL water, add 0.5-0.8g reductive agent, isothermal reaction 18-24 hour at 80-90 DEG C, then through centrifugal, washing and dry, Graphene/polymethyl acrylic acid-2-(N-carbazyl) ethyl ester brush matrix material is obtained.
8. the Graphene with storage effect/polymethyl acrylic acid-2-(N-carbazyl) the ethyl ester brush matrix material described in any one of claim 1-6 is as the application of electroactive middle layer in information recording device.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59152916A (en) * | 1983-02-18 | 1984-08-31 | Res Dev Corp Of Japan | Grafted composite of fluorinated graphite and polymeric compound |
| CN101831039A (en) * | 2010-05-11 | 2010-09-15 | 武汉工程大学 | Polyvinyl carbazole/graphene composite material and synthetic method and application thereof |
| CN103204978A (en) * | 2013-04-03 | 2013-07-17 | 同济大学 | Method for preparing temperature-sensitive graphene/polymer hybrid material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59152916A (en) * | 1983-02-18 | 1984-08-31 | Res Dev Corp Of Japan | Grafted composite of fluorinated graphite and polymeric compound |
| CN101831039A (en) * | 2010-05-11 | 2010-09-15 | 武汉工程大学 | Polyvinyl carbazole/graphene composite material and synthetic method and application thereof |
| CN103204978A (en) * | 2013-04-03 | 2013-07-17 | 同济大学 | Method for preparing temperature-sensitive graphene/polymer hybrid material |
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