CN104953029A - Biodegradable substrate for flexible photoelectronic device and manufacture method thereof - Google Patents

Biodegradable substrate for flexible photoelectronic device and manufacture method thereof Download PDF

Info

Publication number
CN104953029A
CN104953029A CN201510194254.6A CN201510194254A CN104953029A CN 104953029 A CN104953029 A CN 104953029A CN 201510194254 A CN201510194254 A CN 201510194254A CN 104953029 A CN104953029 A CN 104953029A
Authority
CN
China
Prior art keywords
wire
nano
heterojunction
alloy
heterojunction nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510194254.6A
Other languages
Chinese (zh)
Inventor
于军胜
周殿力
王煦
施薇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN201510194254.6A priority Critical patent/CN104953029A/en
Publication of CN104953029A publication Critical patent/CN104953029A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The invention discloses a biodegradable substrate for a flexible photoelectronic device and a manufacture method thereof. The substrate comprises a flexible substrate and a conducting layer on the flexible substrate. The flexible substrate is made of shellac doped with polythiol-type ultraviolet-sensitive adhesive, which is composed of a polythiol-polyenoid system, monofunctional or polyfunctional crylic acid, a photoinitiator, a photosensitizer and an additive. According to the invention, by cross linking of the ultraviolet-sensitive adhesive, light scattering of the substrate is decreased, so that light transmittance of the substrate is enhanced, the performance of the flexible photoelectronic device is further significantly improved, meanwhile the ability of the substrate to block water and oxygen is increased, and the smoothness of the substrate surface and the affinity of the conducting layer are improved. The substrate has the biodegrading ability, so that the problem of serious environmental pollution at present can be solved and the substrate can be widely applied to future preparation of flexible degradable photoelectronic devices.

Description

A kind of biodegradable base board for flexible optoelectronic part and manufacture method thereof
Technical field
The invention belongs to organic optoelectronic technical field, be specifically related to a kind of biodegradable base board for flexible optoelectronic part and manufacture method thereof.
Background technology
Flexible electronic and flexible optoelectronic technology are the high-tech content industries developed rapidly after microelectric technique, are also the important directions of Electronic Development of Information Industry simultaneously.Have ultralight, flexible, rollable even collapsible, the flexible electronic product of transparent characteristic, comprise the high-tech industry that flexible liquid crystal display, flexible organic electro-luminescence display, flexible organic solar batteries etc. have developed into most prospect gradually, the competition of the field of opto-electronic information just launches at world wide.But still there are some problem demanding prompt solutions in this field: 1, the rigid substrates of flexible electronic and flexible optoelectronic subset routine used can not meet people to portability, the requirement of light weight; 2, increasing flexible electronic and flexible optoelectronic product easily cause a large amount of environmental pollution due to its non-biodegradable.Therefore, study degradable base board for flexible optoelectronic part to have very great significance to the range of application and environmental protection tool of widening flexible optoelectronic/electronic technology.
On the other hand, in order to obtain the good substrate for flexible organic opto-electronic device of tack, the conventional method such as mechanical polishing, electrochemical polish or deposition compact inorganic thin film can be adopted to process to increase compatibility between substrate and organic film to flexible substrate and good mechanical strength makes conductive film again, these methods need special equipment and technology difficulty is comparatively large, improve the production cost of substrate.Substrate is the support zone of flexible electronic and flexible optoelectronic part, and its Wuli-Shili-Renli system approach determines the scope of application of device to a great extent.Substrate material conventional in daily use comprises glass, quartz, silicon and plastics.Wherein, glass substrate, quartz base plate and silicon substrate have that quality is hard, weight is large, carry the shortcoming such as inconvenience, non-degradable, and frangible, do not possess flexibility; And although plastic base has the features such as quality is light, flexible, but the water oxygen barrier properties of most of plastics is general, and non-degradable or there is certain toxicity, mechanical strength is general, oxidizable in atmospheric environment, natural ecological environment is caused and destroys significantly.At present, research institution has started to study biodegradable substrate, but still there are some difficult problems: 1, the pliability of biodegradable substrate is general, is difficult to directly apply in flexible optoelectronic part; 2, the water oxygen obstructing capacity of biodegradable substrate is still good not, at device running when kind of a water oxygen attack can reduce device lifetime greatly; 3, the surface smoothness of biodegradable substrate is good not, and poor with conductive layer adhesion, and conductive layer is easily peeled off; 4, the light transmission of biodegradable substrate is not high enough, affects the performance of device.In sum, the existence of these problems, constrains the development in flexible optoelectronic part field largely.
Summary of the invention
The present invention is in order to solve the problems of the technologies described above, and a kind of biodegradable base board for flexible optoelectronic part and manufacture method thereof are provided, increase the pliability of flexible substrate, improve the water oxygen obstructing capacity of substrate, improve the adhesion of flexible substrate and conductive layer, improve the adhesive ability of conductive layer, improve the evenness of substrate surface and the affinity with conductive layer, add the light transmission ability of substrate; Good smoothing effect is played to substrate surface, improves the light transmittance of substrate simultaneously, and then improve photoelectricity or the electro-optical efficiency of flexible optoelectronic part.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is:
A kind of biodegradable base board for flexible optoelectronic part, comprise flexible substrate and conductive layer, described conductive layer is positioned at the top of flexible substrate, it is characterized in that, described flexible substrate is the shellac being mixed with polythiol type ultraviolet sensitivity glue, and component and the mass ratio of described polythiol type ultraviolet sensitivity glue are:
Wherein light trigger is acetophenone derivative, and sensitising agent is thia anthraquinone or Michler's keton, and auxiliary agent comprises antistatic agent, fire retardant and coupling agent.
Described polythiol-polyene systems is the material of following structural formula:
HS (CH 2cH 2o) ncH 2cH 2sH or
Described coupling agent is methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane, gamma-aminopropyl-triethoxy-silane, γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, one or more in γ mercaptopropyitrimethoxy silane or γ-Mercaptopropyltriethoxysilane.
The mass ratio of described polythiol type ultraviolet sensitivity glue shared by flexible substrate is 0.5-5.4%.
Described flexible substrate thickness is 10-900 μm, and the thickness of described conductive layer is no more than 100nm.
The material of described conductive layer is one or more in Graphene, carbon nano-tube, metal simple-substance nano wire, metal alloy nanowires, metal hetero-junction nano wire, zinc oxide, titanium oxide, tin indium oxide or polymer electrode material.
Metal simple-substance nano wire is one or more in Fe nanowire, copper nano-wire, nano silver wire, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, stannum nanowire, tungsten nanometer or Pt nanowires.
Described metal alloy nanowires is copper-iron alloy nano wire, silver ferroalloy nano wire, bule gold nano wire, alfer nano wire, dilval nano wire, ferro-cobalt nano wire, manganeisen nano wire, cadmium ferroalloy nano wire, indium ferroalloy nano wire, tin ferroalloy nano wire, ferro-tungsten nano wire, pt-fe alloy nano wire, yellow gold nano wire, gold copper nano wire, aluminium copper nano wire, monel nano wire, cobalt-copper alloy nano wire, manganin nano wire, cadmium copper alloy nano wire, gun-metal nano wire, tungsten-copper alloy nano wire, Mock gold nano wire, electrum nano wire, aluminium silver alloy nanowires, bazar metal nano wire, cobalt silver alloy nanowires, manganese silver alloy nanowires, cadmium silver nano wire, indium silver alloy nanowires, sn-ag alloy nano wire, tungsten silver alloy nanowires, platinum-silver alloys nano wire, aluminium gold alloy nano-wire, nickel billon nano wire, cobalt billon nano wire, manganese billon nano wire, cadmium billon nano wire, indium billon nano wire, Sillim's alloy nano-wire, tungsten billon nano wire, cobalt-nickel alloy nano wire, manganese-nickel nano wire, cadmium-nickel alloy nano wire, indium nickel alloy nano wire, tin-nickel alloy nano wire, tungsten nickel nano wire, platinum-nickel alloy nano wire, cadmium manganese alloy nano wire, indium manganese alloy nano wire, tin manganese alloy nano wire, tungsten manganese alloy nano wire, platinum manganese alloy nano wire, indium cadmium alloy nano wire, tin cadmium alloy nano wire, tungsten cadmium alloy nano wire, platinum cadmium alloy nano wire, tin-indium alloy nano wire, tungsten indium alloy nano wire, platinum indium alloy nano wire, tungsten ashbury metal nano wire, one or more in platinum ashbury metal nano wire or platinum-tungsten alloys nano wire.
Metal hetero-junction nano wire is copper iron heterojunction nano-wire, silver iron heterojunction nano-wire, gold iron heterojunction nano-wire, ferro-aluminum heterojunction nano-wire, ferronickel heterojunction nano-wire, ferro-cobalt heterojunction nano-wire, ferromanganese heterojunction nano-wire, cadmium iron heterojunction nano-wire, indium iron heterojunction nano-wire, tin iron heterojunction nano-wire, ferrotungsten heterojunction nano-wire, platinum iron heterojunction nano-wire, silver-bearing copper heterojunction nano-wire, gold copper heterojunction nano-wire, aluminum copper dissimilar junction nanowire, ambrose alloy heterojunction nano-wire, cobalt copper heterojunction nano-wire, copper-manganese heterojunction nano-wire, cadmium copper heterojunction nano-wire, tin copper heterojunction nano-wire, tungsten copper heterojunction nano-wire, platinoid heterojunction nano-wire, gold and silver heterojunction nano-wire, aluminium silver heterojunction nano-wire, nickeline heterojunction nano-wire, cobalt silver heterojunction nano-wire, manganese silver heterojunction nano-wire, cadmium silver heterojunction nano-wire, indium silver heterojunction nano-wire, tin silver heterojunction nano-wire, tungsten silver heterojunction nano-wire, platinum silver heterojunction nano-wire, aluminium gold heterojunction nano-wire, nickel gold heterojunction nano-wire, cobalt gold heterojunction nano-wire, manganese gold heterojunction nano-wire, cadmium gold heterojunction nano-wire, indium gold heterojunction nano-wire, Sillim's heterojunction nano-wire, tungsten gold heterojunction nano-wire, cobalt nickel heterojunction nano-wire, manganese nickel heterojunction nano-wire, cadmium nickel heterojunction nano-wire, indium nickel heterojunction nano-wire, tin nickel heterojunction nano-wire, tungsten nickel heterojunction nano-wire, platinum nickel heterojunction nano-wire, cadmium manganese heterojunction nano-wire, indium manganese heterojunction nano-wire, tin manganese heterojunction nano-wire, tungsten manganese heterojunction nano-wire, platinum manganese heterojunction nano-wire, indium cadmium heterojunction nano-wire, tin cadmium heterojunction nano-wire, tungsten cadmium heterojunction nano-wire, platinum cadmium heterojunction nano-wire, tin indium heterojunction nano-wire, tungsten indium heterojunction nano-wire, platinum indium heterojunction nano-wire, tungsten tin heterojunction nano-wire, one or more in platinum tin heterojunction nano-wire or platinum tungsten heterojunction nano-wire.
A manufacture method for biodegradable base board for flexible optoelectronic part, comprises the following steps:
1. the rigid substrates that effects on surface roughness is less than 2nm cleans, and dries up after cleaning with drying nitrogen;
2. roller coat, LB embrane method, blade coating, spin coating, a painting, spraying, czochralski method, the tape casting, dip-coating, inkjet printing, self assembly or silk screen printing is adopted to prepare flexible substrate on the rigid substrate, described flexible substrate is shellac, is mixed with polythiol type ultraviolet sensitivity glue in described shellac;
3. roller coat, LB embrane method, a painting, spraying, czochralski method, inkjet printing or silk screen print method is adopted to prepare conductive layer on flexible substrate surface;
4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains;
5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part.
Further, after substrate manufacture completes, carry out degradation characteristic, sheet resistance, surface topography, water oxygen permeability and light transmission rate to substrate again to test.
Compared with prior art, beneficial effect of the present invention is:
(1) in shellac, appropriate polythiol type ultraviolet sensitivity glue is mixed, by being cross-linked with each other between molecule after treatment with ultraviolet light, prevent molecular resin crystallization in shellac, thus light scattering is reduced, improve the light transmittance of flexible substrate, thus flexible optoelectronic part performance is had greatly improved.
(2) in shellac, mixing appropriate polythiol type ultraviolet sensitivity glue, by being cross-linked with each other between molecule after treatment with ultraviolet light, thus adding the pliability of shellac.
(3) shellac being mixed with appropriate polythiol type ultraviolet sensitivity glue after treatment with ultraviolet light, molecules align is more tight, effectively improves water oxygen obstructing capacity.
(4) conductive layer adhesion is on flexible substrates effectively increased.
Accompanying drawing explanation
Fig. 1 is the structural representation of biodegradable base board for flexible optoelectronic part of the present invention;
Mark in figure: 1, conductive layer, 2, flexible substrate.
Embodiment
Below in conjunction with embodiment, the invention will be further described, and described embodiment is only the present invention's part embodiment, is not whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments used obtained under creative work prerequisite, belongs to protection scope of the present invention.
By reference to the accompanying drawings, biodegradable base board for flexible optoelectronic part provided by the invention, comprise flexible substrate 2 and conductive layer 1, conductive layer 1 is positioned at the upper surface of flexible substrate 2, flexible substrate 2 is the support of conductive layer 1, and flexible substrate 2 has certain bending performance, has the ability of certain anti-steam and oxygen infiltration, there is good planarization, have good light transmission; Described flexible substrate is the shellac being mixed with polythiol type ultraviolet sensitivity glue, and component and the mass ratio of described polythiol type ultraviolet sensitivity glue are:
Wherein light trigger is acetophenone derivative, and sensitising agent is thia anthraquinone or Michler's keton, and auxiliary agent comprises antistatic agent, fire retardant and coupling agent.
Described polythiol-polyene systems is the material of following structural formula:
HS (CH 2cH 2o) ncH 2cH 2sH or
In the present invention, conductive layer 1 requires to have good filming performance, good conductivity, usually adopt in Graphene, carbon nano-tube, metal simple-substance nano wire, metal alloy nanowires, metal hetero-junction nano wire, zinc oxide, titanium oxide, tin indium oxide or polymer electrode material one or more.
Described coupling agent is methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane, gamma-aminopropyl-triethoxy-silane, γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, one or more in γ mercaptopropyitrimethoxy silane or γ-Mercaptopropyltriethoxysilane.
The mass ratio of described polythiol type ultraviolet sensitivity glue shared by flexible substrate is 0.5-5.4%.
Described flexible substrate thickness is 10-900 μm, and the thickness of described conductive layer is no more than 100nm.
The material of described conductive layer is one or more in Graphene, carbon nano-tube, metal simple-substance nano wire, metal alloy nanowires, metal hetero-junction nano wire, zinc oxide, titanium oxide, tin indium oxide or polymer electrode material.
Metal simple-substance nano wire is one or more in Fe nanowire, copper nano-wire, nano silver wire, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, stannum nanowire, tungsten nanometer or Pt nanowires.
Described metal alloy nanowires is copper-iron alloy nano wire, silver ferroalloy nano wire, bule gold nano wire, alfer nano wire, dilval nano wire, ferro-cobalt nano wire, manganeisen nano wire, cadmium ferroalloy nano wire, indium ferroalloy nano wire, tin ferroalloy nano wire, ferro-tungsten nano wire, pt-fe alloy nano wire, yellow gold nano wire, gold copper nano wire, aluminium copper nano wire, monel nano wire, cobalt-copper alloy nano wire, manganin nano wire, cadmium copper alloy nano wire, gun-metal nano wire, tungsten-copper alloy nano wire, Mock gold nano wire, electrum nano wire, aluminium silver alloy nanowires, bazar metal nano wire, cobalt silver alloy nanowires, manganese silver alloy nanowires, cadmium silver nano wire, indium silver alloy nanowires, sn-ag alloy nano wire, tungsten silver alloy nanowires, platinum-silver alloys nano wire, aluminium gold alloy nano-wire, nickel billon nano wire, cobalt billon nano wire, manganese billon nano wire, cadmium billon nano wire, indium billon nano wire, Sillim's alloy nano-wire, tungsten billon nano wire, cobalt-nickel alloy nano wire, manganese-nickel nano wire, cadmium-nickel alloy nano wire, indium nickel alloy nano wire, tin-nickel alloy nano wire, tungsten nickel nano wire, platinum-nickel alloy nano wire, cadmium manganese alloy nano wire, indium manganese alloy nano wire, tin manganese alloy nano wire, tungsten manganese alloy nano wire, platinum manganese alloy nano wire, indium cadmium alloy nano wire, tin cadmium alloy nano wire, tungsten cadmium alloy nano wire, platinum cadmium alloy nano wire, tin-indium alloy nano wire, tungsten indium alloy nano wire, platinum indium alloy nano wire, tungsten ashbury metal nano wire, one or more in platinum ashbury metal nano wire or platinum-tungsten alloys nano wire.
Metal hetero-junction nano wire is copper iron heterojunction nano-wire, silver iron heterojunction nano-wire, gold iron heterojunction nano-wire, ferro-aluminum heterojunction nano-wire, ferronickel heterojunction nano-wire, ferro-cobalt heterojunction nano-wire, ferromanganese heterojunction nano-wire, cadmium iron heterojunction nano-wire, indium iron heterojunction nano-wire, tin iron heterojunction nano-wire, ferrotungsten heterojunction nano-wire, platinum iron heterojunction nano-wire, silver-bearing copper heterojunction nano-wire, gold copper heterojunction nano-wire, aluminum copper dissimilar junction nanowire, ambrose alloy heterojunction nano-wire, cobalt copper heterojunction nano-wire, copper-manganese heterojunction nano-wire, cadmium copper heterojunction nano-wire, tin copper heterojunction nano-wire, tungsten copper heterojunction nano-wire, platinoid heterojunction nano-wire, gold and silver heterojunction nano-wire, aluminium silver heterojunction nano-wire, nickeline heterojunction nano-wire, cobalt silver heterojunction nano-wire, manganese silver heterojunction nano-wire, cadmium silver heterojunction nano-wire, indium silver heterojunction nano-wire, tin silver heterojunction nano-wire, tungsten silver heterojunction nano-wire, platinum silver heterojunction nano-wire, aluminium gold heterojunction nano-wire, nickel gold heterojunction nano-wire, cobalt gold heterojunction nano-wire, manganese gold heterojunction nano-wire, cadmium gold heterojunction nano-wire, indium gold heterojunction nano-wire, Sillim's heterojunction nano-wire, tungsten gold heterojunction nano-wire, cobalt nickel heterojunction nano-wire, manganese nickel heterojunction nano-wire, cadmium nickel heterojunction nano-wire, indium nickel heterojunction nano-wire, tin nickel heterojunction nano-wire, tungsten nickel heterojunction nano-wire, platinum nickel heterojunction nano-wire, cadmium manganese heterojunction nano-wire, indium manganese heterojunction nano-wire, tin manganese heterojunction nano-wire, tungsten manganese heterojunction nano-wire, platinum manganese heterojunction nano-wire, indium cadmium heterojunction nano-wire, tin cadmium heterojunction nano-wire, tungsten cadmium heterojunction nano-wire, platinum cadmium heterojunction nano-wire, tin indium heterojunction nano-wire, tungsten indium heterojunction nano-wire, platinum indium heterojunction nano-wire, tungsten tin heterojunction nano-wire, one or more in platinum tin heterojunction nano-wire or platinum tungsten heterojunction nano-wire.
Unsaturated polyester resin: unsaturated polyester (UP) to react under the effect of initator the linear polyesters made with fractional saturation binary acid (or acid anhydrides) and dihydroxylic alcohols by undersaturated binary acid (or acid anhydrides) is mixed.In its molecular structure, there is undersaturated vinyl monomer to exist, if with active vinyl monomer and this kind of undersaturated vinyl monomer copolymerization, then crosslinking curing and become three-dimensional-structure.In general, the adhesive obtained by this resin-made due to volume contraction in solidification process comparatively large, the internal stress of gluded joint is very large.Easily there is micro-crack in the inside of glue-line and cause splicing power to diminish; Meanwhile, due in macromolecular chain containing ester bond, meet acid, alkali be easily hydrolyzed, thus resistance to medium and resistance to water poor, be easily out of shape under the environment of high temperature and humidity; In addition, its curing rate is comparatively slow, therefore, shows poor combination property, therefore mostly uses as non-structural glue.By reducing unsatisfied chemical bond content, adopting the low monomer of polymerization shrinkage, adding the means such as inorganic filler and thermal plastic high polymer, its overall performance can be improved.
Acrylic resin: this resin system curing rate is fast, studies more at present.
Monomer (Styrene and its derivatives etc.) usually and resin complex use, one side, as diluent, makes glue have the viscosity of constructability; Again there is reactivity on the other hand, enter resin web network after solidification, to the final performance of solidfied material, there is certain improvement.The monomer of early application is Styrene and its derivatives, and this kind of diluent crosslinking rate is slow, volatility is large and poisonous, poor heat resistance.Now, many employings simple function group or polyfunctional group (methyl) acrylate, as methyl methacrylate, ethyl acrylate, acrylic acid propylene glycol ester, n-butyl acrylate etc., the poor problem of adhesive ubiquity thermal endurance of these esters preparation, and also there is the large defect of volatility in the lower ester of some molecular weight.If introduce aromatic rings in molecular structure, then can improve intensity and the resistance to water of glue, extend the storage period of glue.To the requirement of monomer mainly: the respond of low viscosity, highly diluted effect and height, also to take into account volatility, toxicity and peculiar smell little simultaneously, good etc. to the compatibility of resin.In order to regulate various performance parameter, often adopt mix monomer, mix monomer is as follows: free radical activity diluent and cation activity diluent.
Free radical activity diluent is divided into exploitation first generation polyfunctional acrylate monomer comparatively early, the second generation polyfunctional acrylate monomer of recent development and more excellent third generation acrylic monomers.
Monofunctional reactive diluent has: styrene, NVP, Isooctyl acrylate monomer, hydroxy-ethyl acrylate and isobornyl acrylate, methacrylate phosphate and isobornyl methacrylate, and latter two is the good toughness reinforcing monomer of plasticising.
Difunctional reactive diluents has: triethylene glycol diacrylate, tripropylene glycol diacrylate, glycol diacrylate, polyethylene glycol (200) diacrylate alcohol ester, neopentylglycol diacrylate and propoxyl group neopentylglycol diacrylate, acrylate functional monomers mainly contains 1,6-hexanediyl ester (HDDA), BDO diacrylate (BDDA), propylene glycol diacrylate (DPGDA), glycerol diacrylate (TPGDA) and trifunctional three through propane tri (TMPTA), pentaerythritol triacrylate (PETA), trihydroxy methyl propane triol triacrylate (TMPTMA), trimethylolpropane triacrylate, propoxylation three is through propane tri, pentaerythrite three propylene alcohol ester and pentaerythritol propoxylate propylene alcohol ester, N, N-dihydroxy ethyl-3 amido methyl propionate, triethylene glycolbismethyl-acrylate, long-chain fat hydrocarbon glycidol ether acrylic acid, resorcinol bisglycidyl ether, double pentaerythritol C5 methacrylate, tri (propylene glycol) diacrylate, phthalic acid diethanol diacrylate (PDDA).They instead of active little first generation acrylic acid monofunctional monomer.But along with the develop rapidly of UV curing technology, their shortcomings large to the excitant of skin reveal.
Overcome the shortcoming that excitant is large, also there is higher activity and state of cure firmly.Second generation polyfunctional acrylate monomer mainly introduces ethyoxyl or propoxyl group in the molecule, as ethoxylation trihydroxy methyl propane triol triacrylate (TMP (EO) TMA), propoxylation trihydroxy methyl propane triol triacrylate (TMP (PO) TMA), propoxylated glycerine triacrylate (G (PO) TA).Third generation acrylic monomers is mainly the acrylate containing methoxyl group, preferably resolves the contradiction of high curing rate and shrinkage, low state of cure.This kind of material has 1,6-hexylene glycol methoxyl group mono acrylic ester (HDOMEMA), ethoxylation neopentyl glycol methoxyl group mono acrylic ester (TMP (PO) MEDA).After introducing alkoxyl in molecule, the viscosity of monomer can be reduced, reduce the excitant of monomer simultaneously.
The compatibility of introducing to diluent monomer of alkoxyl also improves a lot, and vinyltriethoxysilane (A15I), gamma-methyl allyl acyloxypropyl trimethoxysilane (A174) can be used as monomer.
Cruel in various reactive epoxies diluent and various cyclic ethers, ring, vinyl ether monomers etc. can as the diluent of cation photocuring resin.Wherein vinyl ethers compound and oligomer curing rate fast, modest viscosity, tasteless, nontoxic advantage, can with epoxy resin with the use of.Vinyl ether monomers has: 1, 2, 3-propanetriol-diglycidyl-ether (EPON-812), triethyleneglycol divinylether (DVE-3), 1, 4-butanediol vinyl ethers (HBVE), cyclohexyl vinyl ether (CHVE), perfluoro methyl vinyl ether (PMVE), perfluoropropylvinylether, IVE, hydroxy butyl vinyl ether, vinyl ethyl ether, ethyl vinyl ether, ethyl vinyl ether propylene, ethylene glycol monoallyl ether, hydroxy butyl vinyl ether, butyl vinyl ether, chlorotrifluoroethylene (CTFE), triethylene glycol divinyl ether, methoxy ethylene, vinyl butyl ether, dodecyl vinyl (DDVE), cyclohexyl vinyl ether, tribenzyl-benzene phenol polyethenoxy base ether, tetrafluoroethylene-perfluoro propyl vinyl ether, tetrafluoroethylene-perfluoro propyl vinyl ether, tert-Butyl vinyl ether:
Epoxy compounds monomer has: 3,4-expoxycyclohexyl formic acid-3,4-expoxycyclohexyl methyl esters (ERL-4221), bisphenol A type epoxy resin (EP), epoxy acrylate, epoxy vinyl ester, acrylic acid epoxy ester, epoxymethacrylate, water-soluble itaconic acid epoxy ester resin:
Light trigger: in ultraviolet photo-curing cementing agent, often needs to add Photoactive compounds, to cause or the carrying out of accelerated reaction.Light trigger and sensitising agent can be divided into by the difference of its mechanism of action.Difference is that light trigger is when reacting beginning, absorbs the luminous energy of suitable wavelength and intensity, photophysical process occurs and reaches its a certain excitation state, if this excited energy is greater than the energy required for breaking bonds, then produce free radical polymerization; And after sensitiser absorption luminous energy to its a certain excitation state, just by energy in molecule or intermolecularly to shift, produce free radical polymerization by another molecule obtaining energy.Compared with light trigger, sensitising agent itself does not consume or change structure, and it can be regarded as photochemically reactive catalyst.Its mechanism of action roughly has three kinds: one to be energy transfer mechanism, and two is take hydrogen mechanism by force, and three is the photosensitive mechanism through generating Charger transfer.The light trigger with practical value developed has benzoin and its derivatives and acetophenone derivative, and sensitising agent has benzophenone, thia anthraquinone and Michler's keton.The stability of various initator, yellowing resistance, trigger rate are different, and in different resin systems, efficiency of initiation is also different, should need reasonable selection according to different occasion.As cyanacrylate and C (CH 2oCCH 2cH 2sH) system, use benzoin methyl ether, benzoin ethyl ether respectively, benzoin isopropyl ether causes, curing time is respectively 18s, 20s and 25s, and when causing with benzophenone, curing time is only 15s, and simultaneously the light transmittance of solidfied material also can difference be comparatively large because wavelength is different, and this will according to actual conditions reasonable selection.
The effect of light trigger is after it absorbs UV energy, produces free radical through decomposing, thus the unsaturated bond polymerization in initiator system, crosslinking curing becomes an entirety.Conventional radical photoinitiator has cracking and puies forward the large class of Hydrogen two.
Crack type photoinitiator: crack type photoinitiator mainly contains benzoin ethers (styrax ethers), benzil ketals and acetophenone etc.Crack type photoinitiator is homolysis after absorption ultraviolet light, produces two free radicals, and free radical causes unsaturated group polymerization.Benzoin ethers (styrax ethers) comprising: styrax (Benzoin), benzoin methyl ether, benzoin ethyl ether (Benzoin ethyl ether), benzoin isobutyl ether (Benzoin butyl ether), styrax lose (Benzoin oxime), benzoin isopropyl ether, acylphosphine oxide comprises: 2, 4, 6 trimethylbenzoyl diphenyl phosphine oxides (TPO) and (2, 4, 6-trimethylbenzoyl) phenyl phosphine oxide (BAPO phenyl bis (2, 4, 6-trimethyl benzoyl) phosphine oxide), phenyl two (2, 4, 6-trimethylbenzoyl) phosphine oxide (819), tetramethylpiperidone oxide (TMPO), triethyl phosphate (TEPO), they are more satisfactory light triggers, there is very high space charge force, absorption is had to long wave near ultraviolet ray, be applicable to whitewash and the thicker situation of film, and there is good stability, can not variable color or fade.
Carry Hydrogen initator: carry Hydrogen initator and mainly contain benzophenone and thioxanthones etc.Wherein thioxanthone photoinitiator is at the maximum absorption wavelength in black light district at 380-420nm, and absorbability and hydrogen-taking capacity are strong, have higher efficiency of initiation.Carry Hydrogen initator and must have hydrogen donor as collaborative composition, otherwise efficiency of initiation is too low, so that application can not be put to.Triplet state carbonyl free radical more likely extracts hydrogen than on secondary carbon or on methyl from the tertiary carbon of hydrogen donor molecule, and the hydrogen be connected on the hetero-atom such as oxygen or nitrogen more easily extracts than the hydrogen on carbon atom.This kind of hydrogen donor has amine, hydramine (triethanolamine, methyl diethanolamine, triisopropanolamine etc.), mercaptan, N, N-diethyl-and to dimethylamino benzamide.
Benzophenone light initiation system, benzophenone needs with alcohol, ether or amine also with vinyl monomer just can be made to carry out photopolymerization.Mainly comprise: benzophenone, thia anthraquinone, Michler's keton, dimethoxy benezene phenyl ketone (DMPA), alpha-hydroxy-2, 2 dimethyl acetophenones (1173), Alpha-hydroxy cyclohexyl-phenyl ketone (184), α-amine alkyl phenones, 2-methyl isophthalic acid (4-first coloured glaze base phenyl)-2-morpholinopropanone (MMMP), 2 ' 2-dibenzamidodiphenyl disulfide (DBMD), (4-dimethylamino phenyl)-(1-piperidyl)-ketone, isopropyl thioxanthone (ITX), (4-dimethylamino phenyl)-(4-morpholinyl)-ketone, 2-hydroxy-2-methyl-1-phenyl-1-phenyl-1-acetone, two phenoxy group benzophenone, hydroxy-2-methyl phenyl-propane-1-ketone.And mixed system, as the oxygen in glued membrane can be eliminated initiator system is coordinated to the benzophenone of the inhibition of Raolical polymerizable and tertiary ammonia; Michler's keton and benzophenone with the use of, more cheap and effectively initiator system can be obtained.
Cationic photoinitiator: aromatic sulfonium salts and this type of initator of salt compounded of iodine have excellent high-temperature stability, also have stability, so be widely used in Cationic curing systems with epoxy resin after coordinating.But their the longest absorbing wavelength does not absorb near ultraviolet band in far-ultraviolet region, generally will add light sensitizer, as: radical initiator or light-sensitive coloring agent carry out sensitizing.
This type of initator comprises: xylyl iodine hexafluorophosphate (PI810), hydroxy phenyl salt compounded of iodine (HTIB), the two detergent alkylate iodine hexafluoro antimonate of 4,4-, xylyl salt compounded of iodine, diphenyl hexafluoroarsenate salt compounded of iodine, [4-(2-hydroxyl-3-butoxy-1-propoxyl group) phenyl] iodo-hexafluoro antimonate of benzene, [4-(to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, [4-(4-benzoyl phenoxy group) benzene] phenyl-iodide hexafluorophosphate, 4-(to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, 4,4 '-dimethyl diphenyl salt compounded of iodine hexafluorophosphate (IHT-PI 820), 4,4'-diacetylamino diphenyl iodine hexafluorophosphate, 3,7 one dinitro dibenzo ring-type salt compounded of iodine and 3,7 one dinitro dibenzo ring-type bromine salt, tetrafluoro boric acid diaryl group iodized salt, 3,3'-dinitro diphenyl salt compounded of iodine, 3,3'-dinitro diphenyl salt compounded of iodine and several 2,2'-bis-replaces (iodine, bromine, chlorine)-5,5'-dinitrophenyl salt compounded of iodine, iodate 2-[2-(3-indolizine) vinyl]-1-methylquinoline salt, iodate 4-(2-benzoxazole)-N-picoline salt, 3-nitrobenzophenone diphenyl sulphur hexafluorophosphate, triaryl phosphine glyoxalidine salt, triaryl phosphine 1,1'-dinaphthalene glyoxalidine ring salt, 3,7-dinitro dibenzo bromine five rings salt, p-methyl benzenesulfonic acid triphenyl sulfosalt, bromination triphenyl sulfosalt, (4-Phenylsulfanyl-phenyl) diphenyl sulphur hexafluorophosphate, 4-(thiophenyl) triphenyl sulphur hexafluorophosphate, 3,3 '-dinitro diphenyl iodine hexafluorophosphate, 3-nitrobenzophenone diphenyl sulphur hexafluorophosphate, triphenyl sulfosalt, 4-chlorphenyl diphenyl sulphur hexafluorophosphate, 3-nitrobenzophenone diphenyl sulphur hexafluorophosphate, 4-acetamidophenyl diphenyl sulphur hexafluorophosphate, 3-benzoylphenyl diphenyl sulphur hexafluorophosphate, triphenyl sulphur borofluoride, triphenyl sulphur hexafluorophosphate, triphenyl sulphur hexafluoro antimonate, 4-tolyl diphenyl sulphur hexafluorophosphate, phosphorus hexafluoride triaryl sulfonium salts, antimony hexafluoride triaryl sulfonium salts, [4-(to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, 1-(the bromo-2'-luorobenzyl of 4'-) pyridiniujm, [4-(to benzoylphenylsulfanyl) benzene] phenyl-iodide hexafluorophosphate, { 4-[4-(p-nitrophenyl formoxyl) thiophenyl] benzene } phenyl-iodide hexafluorophosphate, { 4-[4-(to methyl benzoyl) thiophenyl] benzene } phenyl-iodide hexafluorophosphate, { 4-[4-(to methyl benzoyl) phenoxy group] benzene } phenyl-iodide hexafluorophosphate, [4-(to benzoyl phenoxy group) benzene] phenyl-iodide hexafluorophosphate, the two detergent alkylate iodine hexafluoro antimonate of 4,4-.
Luxuriant molysite class: luxuriant molysite class light initiation system is the new cation light initiator of one developed after two aromatic iodonium salt and three aromatic sulfonium salts, first luxuriant molysite ion forms aromatic radical ligand under light illumination, produce the complex compound with the unsaturated iron of an epoxy compounds molecular complexes simultaneously, the lewis acidic feature of this complex compound tool also then forms the complex compound with three epoxy compounds molecular complexes, one of them epoxy compounds open loop can form cation, it can cause cationic ring-opening polymerization, forms polymer.At normal temperatures because the formation of ferrocene salt-epoxy radicals complex, epoxy compounds cationic species needs the time, therefore under the condition that need heat in the external world, to improve polymerization speed.
This type of salt comprises: cyclopentadienyl group-iron-benzene salt, cyclopentadienyl group-iron-toluene salt, cyclopentadienyl group-iron-paraxylene salt, cyclopentadienyl group-iron-naphthalene salts, cyclopentadienyl group-iron-biphenyl salt, cyclopentadienyl group-iron-2,4-dimethyl acetophenone salt, acetyl group-cyclopentadienyl group-iron-paraxylene salt, cyclopentadienyl group-iron-methyl phenyl ethers anisole salt, cyclopentadienyl group-iron-diphenyl ether salt, cyclopentadienyl group-iron-2,4-diethoxybenzene salt, ferrocene tetrafluoroborate, the luxuriant iron tetrafluoroborate of toluene, cyclopentadienyl group-iron-methyl phenyl ethers anisole salt, cyclopentadienyl group-iron-diphenyl ether salt, cyclopentadienyl group-iron-Isosorbide-5-Nitrae-diethoxybenzene salt, cyclopentadienyl group-iron-chlorobenzene salt, cyclopentadienyl group-iron-(Isosorbide-5-Nitrae-diethoxybenzene) hexafluorophosphate, cyclopentadienyl group-iron-diphenyl ether hexafluorophosphate, 1,10-phenanthrolene ferrous perchlorate salt, 1,10-phenanthrolene ferrous sulfate cyclopentadienyl group-iron-methyl phenyl ethers anisole salt, cyclopentadienyl group-iron-diphenyl ether salt, [two (diphenylphosphine) ferrocene of 1,1'-] Nickel Chloride, vinyl ferrocene, N, N'-di-ferrocene methylene butanediamine quaternary ammonium salt, ferrocene formamide, ferrocene acyl propionic acid, ferrocenyl methyl ketone, ethyl dicyclopentadienyl iron, Butyrylferrocene, butyl ferrocene, N, N-dimethyl-amine methyl ferrocene, 1,1'-dibenzoyl ferrocene, (3-carboxyl propionyl group) ferrocene, 1,1'-dibromof errocene, Aminoferrocene.
The light trigger of macromolecule loading: in photocuring system, light trigger is not often exhaust completely in Light Curing, and the part of non-photodissociation can move to coating surface, makes coating yellowing and aging, affects the quality of product; On the other hand, some initators and system is incompatible or compatibility is bad, make it apply and are restricted.For addressing these problems, people are by light trigger producing high-molecular.The initator tool of the initator low relative molecular of producing high-molecular has the following advantages: A, in polymer chain, energy transfer and intermolecular reaction become and be more prone to, and make Polymeric photoinitiators have higher activity.B, by with nonactive group copolymerization, regulates and design the distance of photosensitive group, or changing the distance of optical active group and main chain, thus acquisition has different photoactive initator.C, different optical active groups can be introduced at same macromolecular chain, utilize their cooperative effect to improve light sensitive effect.The producing high-molecular of D, initator, limits the migration of initator, prevent coating turn yellow and aging.E, because most of photolysis debris is still connected on macromolecule matrix, therefore, smell and the toxicity of system can be reduced.
Initator can directly be connected on the chain of macromolecule or oligomer by the producing high-molecular of initator, as introduced on macromolecular chain by thioxanthone or acidic group phosphine oxide etc.; Also can introduce the functional group that can occur to be polymerized in initator, make it in Light Curing, realize producing high-molecular, as introduced in tetraacrylate by benzophenone structural.
The compatibility of various light trigger is also a research direction in recent years, re-uses, both can reduce costs, can expand again the region of absorbing wavelength after compatibility, improves the absorption of ultraviolet radiation energy, thus the solidification effect obtained.The compatibility of light trigger both can be between same type, as being both free radical type, the Irgacure-1700 that such as Ciba newly releases is exactly by 25% (2,4,6-trimethylbenzoyl) phenyl phosphine oxide (BAPO) and 75% alpha-hydroxy-2,2 dimethyl acetophenones (1173) form, and Irgacure-1800 is made up of the Alpha-hydroxy cyclohexyl-phenyl ketone (184) of the BAPO of 25% and 75%; Also can be made up of dissimilar initator, as free radical type with cationic light trigger compatibility, such as, triaryl thiaxanthene salt and benzophenone are coordinated, the curing rate of epoxy compounds can be made to be improved.
Auxiliary agent: in general, for adapting to the bonding requirement of varying environment, also needs in ultraviolet photo-curing cementing agent to add various auxiliary agent, as plasticizer, thixotropic agent, filler, antistatic agent, fire retardant, coupling agent etc.Although their components shared in adhesive are few, sometimes vital effect is produced to the processing characteristics of glue or adhesive property.As cyanacrylate and C (CH 2oCCH 2cH 2sH) under the initiation of benzophenone, if add the silicone couplet CH of l% 2=CHSi (OCH 2cH 2oCH 3) 3, after ultraviolet light polymerization, under being placed in the environment of 80 ~ 100% humidity, after 1 year, do not find change, and if do not add coupling agent, under the same terms, after 2 days just there is white erosion in bonded part, one week afterwards glue-line strip down completely.
Plasticizer comprises: diisooctyl azelate (DIOZ), dioctyl azelate (DOZ), phthalic acid two is ester (DHP), separate adipate (DOS), hexanedioic acid dioctyl ester (DOA), diisobutyl phthalate (DIBP), dioctyl phthalate (DOP), dibutyl phthalate (DBP), dipropyl phthalate (DAP), three vinyl butyl ether base phosphates, polyvinyl butyral resin, tributyl 2-acetylcitrate, repefral (DMP), diethyl phthalate (DEP), hexanedioic acid two (Butoxyethoxy) ethyl ester, isopropyl titanate, tetrabutyl titanate, triethyl citrate, tributyl citrate, tributyl 2-acetylcitrate, tri trimellitate (2-ethyl) own ester (TOTM), phthalic acid two (2-ethyl) own ester, decanedioic acid two (2-ethyl) own ester (DOS), Diethylene Glycol Dibenzoate (DEDB), phthalic anhydride, dipropylene glycol dibenzoate, separate diacid dibenzyl ester (DBS), BS (BS), chlorosulfonated polyethylene (toughening elastic body), triphenyl phosphate (TPP), tricresyl phosphate (dimethylbenzene) ester (TXP), poly-hexanedioic acid propylidene ester (PPA), epoxidized soybean oil (ESO), octyl epoxy stearate (OES2), chlorinated paraffin-42 (CP-42), chlorinated paraffin wax-48 (CP-48), chlorinated paraffin-52 (CP-52), distearyl acid diethylene glycol (DEG) (DEDR), tricresyl phosphate benzene methyl (TCP), diphenyl octyl phosphate (DPO), poly-hexanedioic acid butylidene ester (PBA), butyl epoxy stearate (BES), askarel (CDP), dimethylbenzene methylal resin (plasticizer FH), pumice wax pattern base oil (PROCESS OIL637), soybean oil, naphthenic processing oil (310), W150 softening oil (petroleum hydrocarbon, hydrogenation artificial oil), zirconium aluminium system coupling agent, WB215 (aliphatic acid 18%, fatty acid ester 52%, calcium carbonate 20%).
Coupling agent is the material that a class has both sexes structure, and a part of group in their molecules can react with the chemical group of mineral surfaces, forms strong chemical bonding; Another part group then has close organic character, can with reactive organic molecule or physical entanglement, thus the material strong bonded that two kinds of character vary in size.The coupling agent of current industrial use is divided into the large class of silanes, acyl esters of gallic acid, zirconium class and organochromium complexes four by chemical constitution.Wherein applying more in adhesive is silanes, as methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane (KH-570), gamma-aminopropyl-triethoxy-silane (KH-550), γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, γ mercaptopropyitrimethoxy silane, γ-Mercaptopropyltriethoxysilane.
Levelling agent is used to the flow leveling improving resin, prevent the generation of the defects of coatings such as shrinkage cavity and pinprick, make smooth coating, and can glossiness be improved, comprise mixed solvent, organosilicon, polyacrylate, acetate butyrate fiber, nitrocellulose and polyvinyl butyral resin.Wherein silicone based, comprise diphenylpolysiloxane, methyl phenyl silicone, Organo-modified polysiloxanes, polyether silicones.
Stabilizer is used to be polymerized when minimizing is deposited, and improves the storage stability of resin.Conventional stabilizer has hydroquinones, p methoxy phenol, 1,4-benzoquinone, 2,6 one di-t-butyl cresols, phenothiazine, anthraquinone etc.
Defoamer is used to prevent and eliminate coating and produces bubble in manufacture and use procedure, prevents coating from producing the disadvantages such as pinprick.Phosphate, fatty acid ester and organosilicon etc. can make defoamer.Specifically there is tributyl phosphate, dibutylphosphoric acid ester, phosphate foam inhibitor (AD-14L), froth breaking king (FAG470), defoamer (FAG470), defoamer (BYK-141), defoamer (BYK 037), three (butoxyethyl group) phosphate, triethyl phosphate, Tributyl phosphate ester, triethyl phosphate, tricresyl phosphate chloro isopropyl ester, three butoxy ethyl ester of phosphoric acid, the mixture (light yellow to water white transparency thick liquid) of polyoxyethylene polyoxypropylene and glycol or three alcohol ethers, dimethyl silicone polymer, glycerine polyethenoxy ether (GP330), laureth, polyoxyethylene polyoxypropylene pentaerythrite ether, polyoxyethylene polyoxy propyl alcohol amidogen ether, polypropylene glycerol aether and polyoxypropylene, polyethers, cithrol, metallic soap of stearic acid, polyureas, the fatty acid ester compounded thing of higher alcohols, silicone defoaming agent has organic silicon modified by polyether oxygen alkane, organopolysiloxane mixture, silicone emulsion.
Polymerization inhibitor is used to be polymerized when minimizing is deposited, and improves the storage stability of resin.Conventional polymerization inhibitor is generally divided into molecule-type polymerization inhibitor and stabilized free fundamental mode polymerization inhibitor, and the former mainly contains: hydroquinones, 1,4-benzoquinone, phenothiazine, beta-phenyl naphthylamines, p-tert-butyl catechol, methylene blue, three (N-nitroso-N-Phenylhydroxylamine) aluminium salt, stannous chloride, inorganic matter and the Sulfurs etc. such as ferric trichloride also can be made polymerization inhibitor stabilized free fundamental mode polymerization inhibitor and mainly contain the bitter hydrazine (DPPH) of 1,1-diphenyl-2-, TEMPO (TMP), hydroquinones, allyl acetate, MEHQ (MEHQ), NO free radical piperidine alcohols, phosphorous acid (TEMPO) mixed ester, 4-hydroxyl-2,2,6,6-tetramethyl piperidine-1-oxygen radical (TMHPHA), 8% 3 (N-nitroso-N-Phenylhydroxylamine) aluminium salt: the 2-phenolic group ethoxy acrylate of 92%, 4% 3 (N-nitroso-N-Phenylhydroxylamine) aluminium salt, 96% ethyoxyl list oil triacrylate, MEHQ hydroquinone monomethyl ether, polymerization inhibitor mantoquita, adjacent methyl hydroquinone, 2,6-di-t-butyl cresols, dimethyl hydroquinones, p-tert-butyl catechol (TBC), catechol, p methoxy phenol, 2.6-BHT, 2.5-di-tert-butyl hydroquinone, 1,4-benzoquinone, methylnaphthohydroquinone, 1.4-naphthoquinones, phenthazine, TBHQ (TBHQ), o-sec-butyl-4,6 dinitrophenol (DNBP), ethylene glycol ether, alkylbenzenesulfonate amine salt, p-t-butyl catechol, methyl methacrylate (MMA), 2,4,6-trinitrophenol (TNP), 2,4-dimethyl-6-tert-butyl phenol (TBX), N, N-diethyl hydroxylamine (DEHA), to t-butyl catechol, 2,5-ditert-butylhydro quinone, adjacent methyl is to the adjacent methyl-p-benzoquinone of benzene two, 3-tertiary butyl-4-hydroxyanisol (BHA), 2,6-dinitro-p-cresol (DNPC), polyvinyl acetal, NO free radical piperidine alcohols, 4,6-dinitro o sec-butyl phenol, DMSS (DMSS), propilolic alcohol.
Thixotropic agent adds in resin, can make resin adhesive liquid when static, have higher denseness, becomes again the material of low denseness fluid under external force.Organobentonite acrylonitrile-butadiene rubber (NBR), montmorillonite (Na x(H 2o) 4{ (Al 2-xmg 0.33) [Si 4o 10] (OH) 2), bentonite [(Na x(H 2o) 4(Al 2-xmg 0.83) Si 4o 10) (OH) 2], diatomite (unbodied SiO 2composition, and containing a small amount of Fe 2o 3, CaO, MgO, Al 2o 3and organic impurities), asbestos, wollastonite (CaSiO 3), muscovite (KAl 2(AlSi 3o 10) (OH) 2), phlogopite (KMg 3(AlSi 3o 10) (F, OH) 2), magnesium silicon muscovite [K 2((Fe 2+ Mg) (Fe 3+ Al) 3(Si 7alO 20) (OH) 4)], montmorillonite [Na x(H 2o) 4{ (Al 2-xmg 0.33) [Si 4o 10] (OH) 2], bentonite [Na x(H 2o) 4(Al 2-xmg 0.83) Si 4o 10) (OH) 2], rilanit special, fumed silica, metallic soap (lead stearate, barium, cadmium, calcium, zinc, magnesium, aluminium, rare earth).Then with cellulose derivatives such as hydroxyethylcelluloses in water-based system, polyvinyl alcohol, polyacrylic acid, poly(ethylene oxide), polymethylacrylic acid, Lauxite, melamine resin, resol, phenolic resins water-soluble resin are thickener.
The effect of filler is that part replaces binding agent, reduces the consumption of binding agent, with the effect reaching filling, reinforcement, anti-attrition and reduce costs.Filler require particle thin and even, can be scattered in slurries equably, to binding agent and other component associativities good.The consumption of filler should be suitable, otherwise also can affect serous coat quality.Comprise inorganic mineral bentonite acrylonitrile-butadiene rubber (NBR), potassium aluminosilicate sodium (nepheline), calcium carbonate, moisture Petimin [Mg 3[Si 4o 10] (OH) 2], wollastonite (CaSiO 3), muscovite [KAl 2(AlSi 3o 10) (OH) 2)], phlogopite [KMg 3(AlSi 3o 10) (F, OH) 2], magnesium silicon muscovite [K 2((Fe 2+ Mg) (Fe 3+ Al) 3(Si 7alO 20) (OH) 4)], montmorillonite [Na x(H 2o) 4{ (Al 2-xmg 0.33) [Si 4o 10] (OH) 2], bentonite [Na x(H 2o) 4(Al 2-xmg 0.83) Si 4o 10) (OH) 2], kaolin, red mud (Al 1-xo x), calcium sulfate, acrylate polymers, butyl polyacrylate, polyurethane.
Dispersant impels material particles to be dispersed in medium, forms the reagent of stable suspension.Dispersant is generally divided into inorganic dispersant and the large class of organic dispersing agent two.Conventional inorganic dispersant has silicates (such as waterglass) and alkali metal phosphonates (Amino Trimethylene Phosphonic Acid four sodium, Amino Trimethylene Phosphonic Acid five sodium, Amino Trimethylene Phosphonic Acid potassium, HEDP sodium, HEDP disodium, HEDP four sodium, HEDP potassium, ethylene diamine tetra methylene phosphonic acid five sodium, diethylene triamine pentamethylene phosphonic five sodium, diethylenetriamine penta seven sodium, diethylene triamine pentamethylene phosphonic sodium, 2-phosphonobutane-1, 2, 4-tricarboxylic acids four sodium, hexapotassium sylvite, two 1, 6 hexamethylene triamine five methylenephosphonic acid sodium, trimerization Alendronate, calgon and sodium pyrophosphate etc.).Organic dispersing agent comprises triethyl group hexyl phosphonic acids, Amino Trimethylene Phosphonic Acid, HEDP (HEDP), ethylene diamine tetra methylene phosphonic acid sodium (EDTMPS), ethylene diamine tetra methylene phosphonic acid (EDTMPA), diethylene triamine pentamethylene phosphonic (DTPMP), 2-phosphonobutane-1,2,4-tricarboxylic acids (PBTCA), PAPE (PAPE), 2-HPAA (HPAA), hexapotassium (HDTMPA), polyamino polyether base methylenephosphonic acid (PAPEMP), two 1,6 hexamethylene triamine five methylenephosphonic acids (BHMTPMPA), lauryl sodium sulfate, polyacrylic acid (PAA), Sodium Polyacrylate (PAAS), HPMA (HPMA), maleic acid-acrylic acid copolymer (MA-AA), acrylic acid-2-acrylamide-2-methyl propane sulfonic copolymer (AA/AMPS), acrylic acid-acrylic acid hydroxypropyl acrylate copolymer, acrylic acid-acrylic ester-phosphonic acids-sulfonate quadripolymer, acrylic acid-acrylic ester-sulfonate terpolymer, copolymer of phosphono carboxylic acid (POCA), polyacrylate, carboxylate-sulfonate-nonionic terpolymer, polyepoxy sodium succinate (PESA), poly (sodium aspartate) (PASP), base amylalcohol, cellulose derivative, polyacrylamide, guar gum, fatty acid polyethylene glycol ester etc.
Antioxidant, with the auxiliary agent suppressing fluoropolymer resin thermal oxidative degradation to be major function, belongs to the category of anti-oxidant reagent.Antioxidant is the topmost type of plastics stabilizing additive, and nearly all fluoropolymer resin all relates to the application of antioxidant.According to the mechanism of action, traditional antioxidant systems generally comprises primary antioxidant, auxiliary antioxidant and heavy metal ion passivator etc.Primary antioxidant, to catch polymer peroxy radical for major function, has again the title of " peroxy radical capturing agent " and " chain termination type antioxidant ", relates to aromatic amine compounds and the large series of products of hindered phenol compound two.Aromatic amine antioxidant has: diphenylamines, p-phenylenediamine (PPD), N, N-be two-and [3-(3,5-di-tert-butyl-hydroxy phenyl) propiono] hexamethylene diamine, dihydroquinoline; Hinered phenols antioxidant has: 2,5-ditert-butylhydro quinone, 2,6-di-tert-butyl-4-methy phenol, TBHQ, 2,5-ditert-butylhydro quinone (DBHQ), 2,6-tri-grades of butyl-4-methylphenols, two (3,5-tri-grades of butyl-4-hydroxy phenyls) thioether, four [β-(3,5-, tri-grades of butyl-4-hydroxy phenyls) propionic acid] pentaerythritol ester; Triphenyl phosphite (TPPi), phosphite ester three (2,4-di-tert-butyl phenyl) ester, pentaerythritol bis-phosphite two (2,4-di-tert-butyl phenyl) ester, the dimer of many alkyl bisphenol A phosphite ester and trimerical compound, 3,5-di-tert-butyl-4-hydroxyl benzyl diethyl phosphonate, tricresyl phosphite (2,4-di-tert-butyl-phenyl) ester, β-(4-hydroxy phenyl-3,5-di-t-butyl) the positive octadecanol ester of propionic acid, 1,3,5-trimethyl-2,4,6-tri-(3,5-di-t-butyl-4-hydroxyphenylmethyl) benzene.Auxiliary antioxidant has the effect of decomposing copolymer per-compound, also claims " peroxide decomposer ", comprises sulfo-dicarboxylic ester class and bi-ester of phosphite, usually and primary antioxidant with the use of.The two lauryl of the two octadecyl ester (DSTP) of two Lauryl Alcohol ester, two ten four carbon alcohols esters, thio-2 acid, thio-2 acid dibasic acid esters, two octadecanol ester, thio-2 acid, three monooctyl esters, three the last of the ten Heavenly stems ester, three (Lauryl Alcohol) esters and three (16 carbon alcohol) ester, 3,6,9-trioxa decane-1,11-glycol-bis--n-dodecane mercaptopropionic acid ester, triphenyl phosphate TPP, trisnonyl phenyl phosphite, phosphorous acid octyl diphenyl.
Heavy metal ion passivator, is commonly called as " copper resistant agent ", can complexed transition metal ion, and prevent the oxidative degradation of its catalytic polymerization resin, typical structure is as hydrazide kind compound etc.Recent years, along with going deep into of polymer antioxygen theoretical research, the classification of antioxidant also there occurs certain change, and the most outstanding feature is the introduction of the concept of " carbon free radical trapers ".This radical scavenger is different from traditional primary antioxidant, and they can catch polymer alkyl diradical, is equivalent to set up one defence line in traditional antioxidant system.This type of stabilizing additive mainly comprises 2-ethyl benzofuran ketone, 2-methyl benzofuran ketone, Dihydrobenzofuranes ketone, benzofuranone, dibenzopyrone, 3-aryl-benzofuran-2-ones, 3-arylben-zofuranone, 2-aryl Dihydrobenzofuranes ketone, 2-arylben-zofuranone, 5-cyano group-1-(4-fluorophenyl)-1,3-dihydroisobenzofuran ketone, 5-replaces 1-(4-fluorophenyl)-1,3-dihydroisobenzofuran ketone, 2,3-dihydroxy-2,2-dimethyl-7-benzofuran phenol, 3-(2-acyloxyethoxyphenyl) benzofuran-2-ones, isobenzofuranone, 5-[(imidazo [4,5-b] pyridin-3-yl) methyl] benzofuranone, 1,2,3,4-tetrahydrochysene-benzofuranone, 2,3-dihydro-2-methyl-2-alkyl furanone, 4-ethoxylated bisphenol-A-diacrylate, (2-10)-ethoxylated bisphenol-A-dimethylacrylate, 2-[1-(2-hydroxyl-3,5-bis-tertiary amyl phenyl)-ethyl]-4,6-bis-tertiary amyl phenyl acrylates, bisphenol-A-glycerol double methyl methacrylate, bisphenol-A-dimethylacrylate, 4-ethoxylated bisphenol-A-dimethylacrylate, N, N-dibenzyl hydroxylamine, N-ethyl-N-hvdroxv ethamine, N, N-diethyl hydroxylamine, IPD acrylamide HAS, isopropylhydroxyla, hydroxylamine hydrochloride, hydroxylammonium chloride, hydrogen chlorine azanol, N-methyl-hydroxylamine, acetohydroxamic acid, N-hydroxyl acetamide.
Modifier is intended to improve plasticizing capacity, improves resin melt viscoelasticity and promotes the modified additive that resin melting flows, and this analog assistant is based on acrylic acid esters co-polymer (ACR).
Anti-impact modifier improves the auxiliary agent of hard polymer article shock resistance.Mainly comprise haloflex (CPE), acrylate copolymer (ACR), methacrylate-diene-ethylene copolymer (MBS), ethene-thiazolinyl acetate copolymer (EVA) and acrylonitrile-diene-ethylene copolymer (ABS) etc.The ethylene propylene diene rubber (EPDM) of polypropylene toughness-increasing modified middle use also belongs to rubber toughened scope.
The function of antistatic agent is the sheet resistance reducing polymer product, eliminates the electrostatic hazard that accumulation of static electricity may cause, mainly comprises for cationic surfactant and anion surfactant.Cationic surfactant has: alkyl phosphate diethanolamine salt, stearyl dimethyl benzyl ammonium chloride, stearyl trimethyl ammonium chloride, stearmide, stearoyl dimethyl-penten ammonium chloride, two (2-the ethoxy)-N-of N, N-(3 '-dodecyloxy-2 '-hydroxypropyl) first ammonium Methylsulfate salt, trihydroxyethyl methyl quaternary ammonium Methylsulfate salt, stearamidopropyl dimethyl-beta-hydroxyethyl ammonium dihydrogen orthophosphate, N, N-cetyl ethyl morpholine ethyl-sulfate salt, (dodecanamide propyl trimethyl ammonium) Methylsulfate salt dibrominated N, N-bis-(octadecyldimethyl)-3-oxa--1,5-penta 2 ammonium, styrene polymer type quaternary ammonium salt, palmitate quaternary ammonium salt, alkylphenol-polyethenoxy based quaternary ammonium salt, dialkyl quaternary ammonium salt, polyacrylamide quaternary ammonium salt, octadecyldimethyl ethoxy quaternary ammonium nitrate, ammonium polystyrene sulphonate salt, propyl-dimethyl-beta-hydroxyethyl nitrate, (3-dodecanamide propyl) trimethyl ammonium Methylsulfate salt, the polymer of 2,2'-nitrilo-di-methylcarbinol and poly-(oxygen-1, the 2-second two base) phosphate of α-three decyl-ω-hydroxyl, polyethylene glycol tridecyl ether phosphate, diethanolamine salt, oleic acid diethanolamine salt, triethanol amine oleate, ethoxylated amine, N, N-dihydroxy ethyl octadecylamine, N, N-dihydroxyethyl p-toluidine, alkylphenol-polyethenoxy based quaternary ammonium salt, ethoxyl quaternary ammonium salt, the fluorine-containing quaternary ammonium salt of oxa-, anion surfactant has: fatty alcohol ether phosphate, phenolic ether phosphate (TXP-4), phenolic ether phosphate (TXP-10), different tridecyl alcohol phosphate ester, Tryfac 5573 (MA24P), fatty alcohol ether phosphate potassium (MOA-3PK), phenolic ether phosphate kalium salt (NP-4PK), phenolic ether phosphate kalium salt (NP-10PK), different tridecanol ether phosphate sylvite, Tryfac 5573 sylvite (MA24PK), fatty alcohol phosphate sylvite, ALS, non-ionic surface active agent: the condensation product of alkylamine and oxirane, alkanolamide, AEO, aliphatic acid polyethenoxy ether, two (beta-hydroxyethyl) coco amine, two (beta-hydroxyethyl) stearylamine, two (beta-hydroxyethyl) beef tallow amine, HMPA, perfluoroalkyl ethanol APEO.
Negative and positive amphoteric surfactant comprises: dodecyl-dimethyl quaternary ammonium second inner salt, dodecyl dimethyl quaternary ammonium second inner salt, alkyl dihydroxy ethyl ammonium second inner salt, N-alkylaminoacid salts, epoxy tripolymer acid inner salt, carboxybetaine, tridecyl dimethyl (2-sulfurous acid) ethyl ammonium second inner salt, N-dodecyl alanine, 3-chloro propyl amine hydrochloric acid salt, N-tertbutyloxycarbonyl-D-3-(2-naphthyl)-alanine, N-tert-butoxycarbonyl-D-2-naphthylalanine, tertbutyloxycarbonyl-D-2-naphthylalanine, tertbutyloxycarbonyl-D-3-(2-naphthyl)-alanine, N-tertbutyloxycarbonyl-L-2-trifluoromethyl-phenylalanine, glyphosate isopropyl amine salt.
Polymer Antistatic Agent comprises: poly(ethylene oxide) (PEO), polyether ester acid imide, polyethylene glycol methacrylic acid copolymer body, polyether ester amides (PEEA), polyether ester acetamide (PEAI), polyethylene glycol oxide, epoxy propane copolymer (PEO-ECH), polyethylene glycol methacrylate-styrene polymer (PEGMA), methacrylic acid (MAA), the amphipathic copolymer that octadecyl methacrylate (SMA)+polyethylene glycol methacrylate-styrene polymer (PEGMA) forms.
In fire retardant, inorganic combustion inhibitor comprises antimonous oxide, zinc molybdate, zinc oxide, iron oxide, tin oxide, aluminium hydroxide, magnesium hydroxide, antimony oxide, Firebrake ZB and red phosphorus, organic fire-retardant comprises deca-BDE, three (2, 3-dibromopropyl) phosphate, HBCD, poly-2, 6-dibromobenzene aether, chlorinated paraffin wax, polyphosphate, red phosphorus, two (tetrabromo phthalimide) ethane, Dowspray 9 homopolymers, melamine, cyanurate, isodecyl diphenyl phosphate, ethylhexyl diphenyl phosphate, tricresyl phosphate isopropyl phenyl ester, two (2 chloroethyl) vinylphosphonate, ethylene two [three (2 cyanoethyl) bromination microcosmic salt], N, two (2 ethoxy) the AminomethylphosphoniAcid Acid diethylester of N, polyphenylene phosphonic acids diphenyl sulphone (DPS) ester, polyazodiphenylene phenyiphosphonate, polyphenylene phosphonic acids bisphenol-A ester.
Mould inhibitor, also known as microbial inhibitor, is the growth of microorganism such as a class mould fungus inhibition, prevents the stabilizing additive that fluoropolymer resin is degraded by microbial attack.Most polymeric material is insensitive to mould, but due to its goods work in-process with the addition of plasticizer, lubricant, fatty acid soaps class etc. can mould growth class material and there is mould sensitivity.The chemical substance that plastics mould inhibitor comprises is a lot, and more common kind comprises organo-metallic compound (as organic mercury, organotin, organic copper, organo-arsenic etc.), organic compounds containing nitrogen, organic compounds containing sulfur, organic halogen compound and phenol derivatives etc.Comprising phenol, pentachlorophenol, phenyl mercury oleate, copper 8-quinolinolate, chlorination three second or tributyl tin, copper sulphate, mercury chloride, sodium fluoride.
Sensitizer is to dimethylamino benzamide; In promoter, aminopropyl silsesquioxane and Versamid mass ratio are 3:1.
Shellac is a kind of natural resin, has unique good characteristic, be widely used in food, medicine, plastics, military affairs, electrically, the industry such as rubber, ink, leather, coating, dyestuff and adhesive.Shellac is nontoxic, is mainly used in the capsule etc. of nutrients that the moistureproof sugar-coat of pill tablet, medication containment, glazing, enteric cartridge bag clothing and developed recently get up and cosmetics at present in medical industry.Shellac coating can be used for a lot of aspects of food industry equally, can be absorbed by the body, can natural degradation, such as, after candy and cake have been coated with shellac coating, can become very attractive in appearance, bright, can protection against the tide, anti-caking, anti-metamorphic and prolongation period of storage etc.Fruit, with after shellac coating film, can suppress moisture to evaporate over a period to come, keep fresh, reduces and rots, improve outward appearance, produces the effect of increasing economic efficiency.Shellac product has good tensile strength, resistance to wear, resilience and hardness, has desirable mechanical performance.Electric property aspect, the dielectric strength of shellac is high, and after arranging by electric arc, without conductivity, adds that it has good adherence and thermoplasticity, electrical apparatus insulation has special purposes.In addition, the film that the film that the shellac be hydrolyzed is formed is formed than natural shellac is more soft, and this is relevant with the increase of barras in shellac.But the steam impregnability of hydrolysis shellac film is than lower with natural shellac film, so need to carry out the water oxygen obstructing capacity that some process ensure shellac.
Described flexible substrate thickness is 10-900 μm, and the thickness of described conductive layer is no more than 100nm.
The material of described conductive layer is one or more in Graphene, carbon nano-tube, metal simple-substance nano wire, metal alloy nanowires, metal hetero-junction nano wire, zinc oxide, titanium oxide, tin indium oxide or polymer electrode material.
Metal simple-substance nano wire is one or more in Fe nanowire, copper nano-wire, nano silver wire, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, stannum nanowire, tungsten nanometer or Pt nanowires.
Described metal alloy nanowires is copper-iron alloy nano wire, silver ferroalloy nano wire, bule gold nano wire, alfer nano wire, dilval nano wire, ferro-cobalt nano wire, manganeisen nano wire, cadmium ferroalloy nano wire, indium ferroalloy nano wire, tin ferroalloy nano wire, ferro-tungsten nano wire, pt-fe alloy nano wire, yellow gold nano wire, gold copper nano wire, aluminium copper nano wire, monel nano wire, cobalt-copper alloy nano wire, manganin nano wire, cadmium copper alloy nano wire, gun-metal nano wire, tungsten-copper alloy nano wire, Mock gold nano wire, electrum nano wire, aluminium silver alloy nanowires, bazar metal nano wire, cobalt silver alloy nanowires, manganese silver alloy nanowires, cadmium silver nano wire, indium silver alloy nanowires, sn-ag alloy nano wire, tungsten silver alloy nanowires, platinum-silver alloys nano wire, aluminium gold alloy nano-wire, nickel billon nano wire, cobalt billon nano wire, manganese billon nano wire, cadmium billon nano wire, indium billon nano wire, Sillim's alloy nano-wire, tungsten billon nano wire, cobalt-nickel alloy nano wire, manganese-nickel nano wire, cadmium-nickel alloy nano wire, indium nickel alloy nano wire, tin-nickel alloy nano wire, tungsten nickel nano wire, platinum-nickel alloy nano wire, cadmium manganese alloy nano wire, indium manganese alloy nano wire, tin manganese alloy nano wire, tungsten manganese alloy nano wire, platinum manganese alloy nano wire, indium cadmium alloy nano wire, tin cadmium alloy nano wire, tungsten cadmium alloy nano wire, platinum cadmium alloy nano wire, tin-indium alloy nano wire, tungsten indium alloy nano wire, platinum indium alloy nano wire, tungsten ashbury metal nano wire, one or more in platinum ashbury metal nano wire or platinum-tungsten alloys nano wire.
Metal hetero-junction nano wire is copper iron heterojunction nano-wire, silver iron heterojunction nano-wire, gold iron heterojunction nano-wire, ferro-aluminum heterojunction nano-wire, ferronickel heterojunction nano-wire, ferro-cobalt heterojunction nano-wire, ferromanganese heterojunction nano-wire, cadmium iron heterojunction nano-wire, indium iron heterojunction nano-wire, tin iron heterojunction nano-wire, ferrotungsten heterojunction nano-wire, platinum iron heterojunction nano-wire, silver-bearing copper heterojunction nano-wire, gold copper heterojunction nano-wire, aluminum copper dissimilar junction nanowire, ambrose alloy heterojunction nano-wire, cobalt copper heterojunction nano-wire, copper-manganese heterojunction nano-wire, cadmium copper heterojunction nano-wire, tin copper heterojunction nano-wire, tungsten copper heterojunction nano-wire, platinoid heterojunction nano-wire, gold and silver heterojunction nano-wire, aluminium silver heterojunction nano-wire, nickeline heterojunction nano-wire, cobalt silver heterojunction nano-wire, manganese silver heterojunction nano-wire, cadmium silver heterojunction nano-wire, indium silver heterojunction nano-wire, tin silver heterojunction nano-wire, tungsten silver heterojunction nano-wire, platinum silver heterojunction nano-wire, aluminium gold heterojunction nano-wire, nickel gold heterojunction nano-wire, cobalt gold heterojunction nano-wire, manganese gold heterojunction nano-wire, cadmium gold heterojunction nano-wire, indium gold heterojunction nano-wire, Sillim's heterojunction nano-wire, tungsten gold heterojunction nano-wire, cobalt nickel heterojunction nano-wire, manganese nickel heterojunction nano-wire, cadmium nickel heterojunction nano-wire, indium nickel heterojunction nano-wire, tin nickel heterojunction nano-wire, tungsten nickel heterojunction nano-wire, platinum nickel heterojunction nano-wire, cadmium manganese heterojunction nano-wire, indium manganese heterojunction nano-wire, tin manganese heterojunction nano-wire, tungsten manganese heterojunction nano-wire, platinum manganese heterojunction nano-wire, indium cadmium heterojunction nano-wire, tin cadmium heterojunction nano-wire, tungsten cadmium heterojunction nano-wire, platinum cadmium heterojunction nano-wire, tin indium heterojunction nano-wire, tungsten indium heterojunction nano-wire, platinum indium heterojunction nano-wire, tungsten tin heterojunction nano-wire, one or more in platinum tin heterojunction nano-wire or platinum tungsten heterojunction nano-wire.
Below specific embodiments of the invention:
Embodiment 1
Board structure as shown in Figure 1, flexible substrate 2 is for being mixed with the shellac of polythiol type ultraviolet sensitivity glue, and conductive layer 1 is Graphene.Preparation method is as follows:
1. the rigid substrates that first effects on surface roughness is less than 2nm cleans, and utilizes washing agent, acetone, deionized water, isopropyl alcohol to carry out ultrasonic cleaning respectively, dries up after cleaning with drying nitrogen; 2. adopt spin coating to prepare shellac and polythiol type ultraviolet sensitivity glue mixed film (mass ratio shared by ultraviolet sensitivity glue is 0.5%) on the rigid substrate, thickness is 10 μm, and described polythiol type ultraviolet sensitivity collagen material comprises following composition:
3. in the film surface spraying process that step is 2. obtained, Graphene aqueous dispersions is prepared conductive layer, height 15cm, spraying air pressure 0.4MPa, spray rate 0.4mL/min, conductive layer thickness is 100nm; 4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains, processing time 35s; 5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part.6. the degradation characteristic of base board for flexible optoelectronic part, sheet resistance, surface topography, water oxygen permeability and light transmission rate is tested.Test gained, prepared base board for flexible optoelectronic part square resistance is 82 Ω/.
Embodiment 2
Board structure as shown in Figure 1, flexible substrate 2 is for being mixed with the shellac of polythiol type ultraviolet sensitivity glue, and conductive layer 1 is carbon nano-tube.Preparation method is as follows: the rigid substrates that 1. first effects on surface roughness is less than 2nm cleans, and utilizes washing agent, acetone, deionized water, isopropyl alcohol to carry out ultrasonic cleaning respectively, dries up after cleaning with drying nitrogen; 2. adopt spin coating to prepare shellac and polythiol type ultraviolet sensitivity glue mixed film (mass ratio shared by ultraviolet sensitivity glue is 1.0%) on the rigid substrate, thickness is 40 μm, and described polythiol type ultraviolet sensitivity collagen material comprises following composition:
3. in the film surface spraying process that step is 2. obtained, carbon nano-tube aqueous dispersions is prepared conductive layer, height 15cm, spraying air pressure 0.4MPa, spray rate 0.4mL/min, conductive layer thickness is 97nm; 4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains, processing time 35s; 5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part; 6. the degradation characteristic of base board for flexible optoelectronic part, sheet resistance, surface topography, water oxygen permeability and light transmission rate is tried.Test gained, prepared base board for flexible optoelectronic part square resistance is 92 Ω/.
Embodiment 3
Board structure as shown in Figure 1, flexible substrate 2 is for being mixed with the shellac of polythiol type ultraviolet sensitivity glue, and conductive layer 1 is nano silver wire.Preparation method is as follows: the rigid substrates that 1. first effects on surface roughness is less than 2nm cleans, and utilizes washing agent, acetone, deionized water, isopropyl alcohol to carry out ultrasonic cleaning respectively, dries up after cleaning with drying nitrogen; 2. adopt spin coating to prepare shellac and polythiol type ultraviolet sensitivity glue mixed film (mass ratio shared by ultraviolet sensitivity glue is 1.5%) on the rigid substrate, thickness is 60 μm, and described polythiol type ultraviolet sensitivity collagen material comprises following composition:
3. in the film surface spraying process that step is 2. obtained, nano silver wire isopropyl alcohol dispersion liquid is prepared conductive layer, height 15cm, spraying air pressure 0.4MPa, spray rate 0.4mL/min, conductive layer thickness is 95nm; 4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains, processing time 35s; 5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part; 6. the degradation characteristic of base board for flexible optoelectronic part, sheet resistance, surface topography, water oxygen permeability and light transmission rate is tried.Test gained, prepared base board for flexible optoelectronic part square resistance is 60 Ω/.
Embodiment 4
Board structure as shown in Figure 1, flexible substrate 2 is for being mixed with the shellac of polythiol type ultraviolet sensitivity glue, and conductive layer 1 is gold copper nano wire.Preparation method is as follows: the rigid substrates that 1. first effects on surface roughness is less than 2nm cleans, and utilizes washing agent, acetone, deionized water, isopropyl alcohol to carry out ultrasonic cleaning respectively, dries up after cleaning with drying nitrogen; 2. adopt spin coating to prepare shellac and polythiol type ultraviolet sensitivity glue mixed film (mass ratio shared by ultraviolet sensitivity glue is 2.0%) on the rigid substrate, thickness is 150 μm, and described polythiol type ultraviolet sensitivity collagen material comprises following composition:
3. in the film surface spraying process that step is 2. obtained, gold copper nano wire aqueous dispersions is prepared conductive layer, height 15cm, spraying air pressure 0.4MPa, spray rate 0.4mL/min, conductive layer thickness is 93nm; 4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains, processing time 35s; 5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part; 6. the degradation characteristic of base board for flexible optoelectronic part, sheet resistance, surface topography, water oxygen permeability and light transmission rate is tried.Test gained, prepared base board for flexible optoelectronic part square resistance is 64 Ω/.
Embodiment 5
Board structure as shown in Figure 1, flexible substrate 2 is for being mixed with the shellac of polythiol type ultraviolet sensitivity glue, and conductive layer 1 is tin indium oxide.Preparation method is as follows: the rigid substrates that 1. first effects on surface roughness is less than 2nm cleans, and utilizes washing agent, acetone, deionized water, isopropyl alcohol to carry out ultrasonic cleaning respectively, dries up after cleaning with drying nitrogen; 2. adopt spin coating to prepare shellac and polythiol type ultraviolet sensitivity glue mixed film (mass ratio shared by ultraviolet sensitivity glue is 2.5%) on the rigid substrate, thickness is 250 μm, and described polythiol type ultraviolet sensitivity collagen material comprises following composition:
3. prepare conductive indium-tin oxide layer in the film surface silk screen print method that step is 2. obtained, conductive layer thickness is 91nm; 4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains, processing time 35s; 5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part; 6. the degradation characteristic of base board for flexible optoelectronic part, sheet resistance, surface topography, water oxygen permeability and light transmission rate is tested.Test gained, prepared base board for flexible optoelectronic part square resistance is 45 Ω/.
Embodiment 6
Board structure as shown in Figure 1, flexible substrate 2 is for being mixed with the shellac of polythiol type ultraviolet sensitivity glue, and conductive layer 1 is poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS).Preparation method is as follows:
1. the rigid substrates that first effects on surface roughness is less than 2nm cleans, and utilizes washing agent, acetone, deionized water, isopropyl alcohol to carry out ultrasonic cleaning respectively, dries up after cleaning with drying nitrogen; 2. adopt spin coating to prepare shellac and polythiol type ultraviolet sensitivity glue mixed film (mass ratio shared by ultraviolet sensitivity glue is 4.0%) on the rigid substrate, thickness is 550 μm, and described polythiol type ultraviolet sensitivity collagen material comprises following composition:
3. prepare PEDOT:PSS conductive layer in the film surface ink-jet printing process that step is 2. obtained, conductive layer thickness is 60nm; 4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains, processing time 35s; 5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part; 6. the degradation characteristic of base board for flexible optoelectronic part, sheet resistance, surface topography, water oxygen permeability and light transmission rate is tested.Test gained, prepared base board for flexible optoelectronic part square resistance is 250 Ω/.
Embodiment 7
Board structure as shown in Figure 1, flexible substrate 2 is for being mixed with the shellac of polythiol type ultraviolet sensitivity glue, and conductive layer 1 is ferronickel heterojunction nano-wire.Preparation method is as follows: the rigid substrates that 1. first effects on surface roughness is less than 2nm cleans, and utilizes washing agent, acetone, deionized water, isopropyl alcohol to carry out ultrasonic cleaning respectively, dries up after cleaning with drying nitrogen; 2. adopt spin coating to prepare shellac and polythiol type ultraviolet sensitivity glue mixed film (mass ratio shared by ultraviolet sensitivity glue is 5.4%) on the rigid substrate, thickness is 900 μm, and described polythiol type ultraviolet sensitivity collagen material comprises following composition:
3. prepare ferronickel heterojunction nano-wire conductive layer in the film surface ink-jet printing process that step is 2. obtained, conductive layer thickness is 65nm; 4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains, processing time 35s; 5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part; 6. the degradation characteristic of base board for flexible optoelectronic part, sheet resistance, surface topography, water oxygen permeability and light transmission rate is tested.Test gained, prepared base board for flexible optoelectronic part square resistance is 111 Ω/.
Table 1 is the light transmission rate test result of embodiment 1-7 flexible substrate, and a kind of is the shellac being mixed with polythiol type ultraviolet sensitivity glue, and another kind is the shellac of non-polythiol type ultraviolet sensitivity glue.

Claims (10)

1. a biodegradable base board for flexible optoelectronic part, comprise flexible substrate and conductive layer, described conductive layer is positioned at the top of flexible substrate, it is characterized in that, described flexible substrate is the shellac being mixed with polythiol type ultraviolet sensitivity glue, and component and the mass ratio of described polythiol type ultraviolet sensitivity glue are:
Wherein light trigger is acetophenone derivative, and sensitising agent is thia anthraquinone or Michler's keton, and auxiliary agent comprises antistatic agent, fire retardant and coupling agent.
2. biodegradable base board for flexible optoelectronic part according to claim 1, is characterized in that, described polythiol-polyene systems is one or more of the material of following structural formula:
3. biodegradable base board for flexible optoelectronic part according to claim 1, is characterized in that, described coupling agent is methylvinyldichlorosilane, methyl hydrogen dichlorosilane, dimethyldichlorosilane, chlorodimethyl silane, vinyl trichlorosilane, γ-aminopropyltrimethoxysilane, dimethyl silicone polymer, poly-hydrogen methylsiloxane, poly-methyl methoxy radical siloxane, γ-methacrylic acid third vinegar base trimethoxy silane, gamma-aminopropyl-triethoxy-silane, γ-glycidol ether propyl trimethoxy silicane, aminopropyl silsesquioxane, γ-methacryloxypropyl trimethoxy silane, chain alkyl trimethoxy silane, vinyltriethoxysilane, vinyltrimethoxy silane, γ-chloropropyl triethoxysilane, two-(the silica-based propyl group of γ-triethoxy), anilinomethyl triethoxysilane, N-β (aminoethyl)-γ-aminopropyltrimethoxysilane, N-(β-aminoethyl)-gamma-aminopropyl-triethoxy-silane, N-β (aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane, γ-(2,3-epoxy third oxygen) propyl trimethoxy silicane, γ-(methacryloxypropyl) oxypropyl trimethyl silane, one or more in γ mercaptopropyitrimethoxy silane or γ-Mercaptopropyltriethoxysilane.
4. biodegradable base board for flexible optoelectronic part according to claim 1, is characterized in that, the mass ratio of described polythiol type ultraviolet sensitivity glue shared by flexible substrate is 0.5-5.4%.
5. biodegradable base board for flexible optoelectronic part according to claim 4, is characterized in that, described flexible substrate thickness is 10-900 μm, and the thickness of described conductive layer is no more than 100nm.
6. biodegradable base board for flexible optoelectronic part according to claim 1, it is characterized in that, the material of described conductive layer is one or more in Graphene, carbon nano-tube, metal simple-substance nano wire, metal alloy nanowires, metal hetero-junction nano wire, zinc oxide, titanium oxide, tin indium oxide or polymer electrode material.
7. biodegradable base board for flexible optoelectronic part according to claim 6, it is characterized in that, described metal simple-substance nano wire is one or more in Fe nanowire, copper nano-wire, nano silver wire, nanowires of gold, aluminium nano wire, nickel nano wire, cobalt nanowire, manganese nano wire, cadmium nano wire, indium nano wire, stannum nanowire, tungsten nanometer or Pt nanowires.
8. biodegradable base board for flexible optoelectronic part according to claim 6, is characterized in that, described metal alloy nanowires is copper-iron alloy nano wire, silver ferroalloy nano wire, bule gold nano wire, alfer nano wire, dilval nano wire, ferro-cobalt nano wire, manganeisen nano wire, cadmium ferroalloy nano wire, indium ferroalloy nano wire, tin ferroalloy nano wire, ferro-tungsten nano wire, pt-fe alloy nano wire, yellow gold nano wire, gold copper nano wire, aluminium copper nano wire, monel nano wire, cobalt-copper alloy nano wire, manganin nano wire, cadmium copper alloy nano wire, gun-metal nano wire, tungsten-copper alloy nano wire, Mock gold nano wire, electrum nano wire, aluminium silver alloy nanowires, bazar metal nano wire, cobalt silver alloy nanowires, manganese silver alloy nanowires, cadmium silver nano wire, indium silver alloy nanowires, sn-ag alloy nano wire, tungsten silver alloy nanowires, platinum-silver alloys nano wire, aluminium gold alloy nano-wire, nickel billon nano wire, cobalt billon nano wire, manganese billon nano wire, cadmium billon nano wire, indium billon nano wire, Sillim's alloy nano-wire, tungsten billon nano wire, cobalt-nickel alloy nano wire, manganese-nickel nano wire, cadmium-nickel alloy nano wire, indium nickel alloy nano wire, tin-nickel alloy nano wire, tungsten nickel nano wire, platinum-nickel alloy nano wire, cadmium manganese alloy nano wire, indium manganese alloy nano wire, tin manganese alloy nano wire, tungsten manganese alloy nano wire, platinum manganese alloy nano wire, indium cadmium alloy nano wire, tin cadmium alloy nano wire, tungsten cadmium alloy nano wire, platinum cadmium alloy nano wire, tin-indium alloy nano wire, tungsten indium alloy nano wire, platinum indium alloy nano wire, tungsten ashbury metal nano wire, one or more in platinum ashbury metal nano wire or platinum-tungsten alloys nano wire.
9. biodegradable base board for flexible optoelectronic part according to claim 6, is characterized in that, described metal hetero-junction nano wire is copper iron heterojunction nano-wire, silver iron heterojunction nano-wire, gold iron heterojunction nano-wire, ferro-aluminum heterojunction nano-wire, ferronickel heterojunction nano-wire, ferro-cobalt heterojunction nano-wire, ferromanganese heterojunction nano-wire, cadmium iron heterojunction nano-wire, indium iron heterojunction nano-wire, tin iron heterojunction nano-wire, ferrotungsten heterojunction nano-wire, platinum iron heterojunction nano-wire, silver-bearing copper heterojunction nano-wire, gold copper heterojunction nano-wire, aluminum copper dissimilar junction nanowire, ambrose alloy heterojunction nano-wire, cobalt copper heterojunction nano-wire, copper-manganese heterojunction nano-wire, cadmium copper heterojunction nano-wire, tin copper heterojunction nano-wire, tungsten copper heterojunction nano-wire, platinoid heterojunction nano-wire, gold and silver heterojunction nano-wire, aluminium silver heterojunction nano-wire, nickeline heterojunction nano-wire, cobalt silver heterojunction nano-wire, manganese silver heterojunction nano-wire, cadmium silver heterojunction nano-wire, indium silver heterojunction nano-wire, tin silver heterojunction nano-wire, tungsten silver heterojunction nano-wire, platinum silver heterojunction nano-wire, aluminium gold heterojunction nano-wire, nickel gold heterojunction nano-wire, cobalt gold heterojunction nano-wire, manganese gold heterojunction nano-wire, cadmium gold heterojunction nano-wire, indium gold heterojunction nano-wire, Sillim's heterojunction nano-wire, tungsten gold heterojunction nano-wire, cobalt nickel heterojunction nano-wire, manganese nickel heterojunction nano-wire, cadmium nickel heterojunction nano-wire, indium nickel heterojunction nano-wire, tin nickel heterojunction nano-wire, tungsten nickel heterojunction nano-wire, platinum nickel heterojunction nano-wire, cadmium manganese heterojunction nano-wire, indium manganese heterojunction nano-wire, tin manganese heterojunction nano-wire, tungsten manganese heterojunction nano-wire, platinum manganese heterojunction nano-wire, indium cadmium heterojunction nano-wire, tin cadmium heterojunction nano-wire, tungsten cadmium heterojunction nano-wire, platinum cadmium heterojunction nano-wire, tin indium heterojunction nano-wire, tungsten indium heterojunction nano-wire, platinum indium heterojunction nano-wire, tungsten tin heterojunction nano-wire, one or more in platinum tin heterojunction nano-wire or platinum tungsten heterojunction nano-wire.
10., according to the manufacture method of the arbitrary described biodegradable base board for flexible optoelectronic part of claim 1-9, it is characterized in that, comprise the following steps:
1. the rigid substrates that effects on surface roughness is less than 2nm cleans, and dries up after cleaning with drying nitrogen;
2. roller coat, LB embrane method, blade coating, spin coating, a painting, spraying, czochralski method, the tape casting, dip-coating, inkjet printing, self assembly or silk screen printing is adopted to prepare flexible substrate on the rigid substrate, described flexible substrate is shellac, is mixed with polythiol type ultraviolet sensitivity glue in described shellac;
3. roller coat, LB embrane method, a painting, spraying, czochralski method, inkjet printing or silk screen print method is adopted to prepare conductive layer on flexible substrate surface;
4. treatment with ultraviolet light is carried out to the flexible substrate that 3. step obtains;
5. the flexible substrate after the step 4. process of medium ultraviolet light is peeled off from rigid substrates, form base board for flexible optoelectronic part.
CN201510194254.6A 2015-04-22 2015-04-22 Biodegradable substrate for flexible photoelectronic device and manufacture method thereof Pending CN104953029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510194254.6A CN104953029A (en) 2015-04-22 2015-04-22 Biodegradable substrate for flexible photoelectronic device and manufacture method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510194254.6A CN104953029A (en) 2015-04-22 2015-04-22 Biodegradable substrate for flexible photoelectronic device and manufacture method thereof

Publications (1)

Publication Number Publication Date
CN104953029A true CN104953029A (en) 2015-09-30

Family

ID=54167551

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510194254.6A Pending CN104953029A (en) 2015-04-22 2015-04-22 Biodegradable substrate for flexible photoelectronic device and manufacture method thereof

Country Status (1)

Country Link
CN (1) CN104953029A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105618778A (en) * 2015-12-29 2016-06-01 中国石油化工股份有限公司 Preparation method for copper nanotube with copper oxide nano-particles embedded therein
CN107019024A (en) * 2017-03-13 2017-08-08 舟山汇丰冷藏物流发展有限公司 A kind of drying device of large yellow croaker
CN108615971A (en) * 2018-03-07 2018-10-02 厦门信达光电物联科技研究院有限公司 A kind of RFID antenna and preparation method thereof
CN113788686A (en) * 2020-05-26 2021-12-14 中国科学院化学研究所 3D printing ceramic part with complex structure and preparation method and application thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425560A (en) * 2008-12-08 2009-05-06 电子科技大学 Substrate for flexible organic optoelectric device and preparation thereof
CN101887908A (en) * 2010-03-09 2010-11-17 电子科技大学 Active drive organic electroluminescent device and preparation method thereof
CN101916813A (en) * 2010-07-09 2010-12-15 电子科技大学 Light-emitting diode (LED) and preparation method thereof
CN102208563A (en) * 2011-04-18 2011-10-05 电子科技大学 Substrate for flexible luminescent device and preparation method thereof
CN102299118A (en) * 2011-05-20 2011-12-28 电子科技大学 Method for packaging photoelectronic device
CN103302910A (en) * 2013-06-25 2013-09-18 电子科技大学 Biodegradable flexible conductive base plate and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101425560A (en) * 2008-12-08 2009-05-06 电子科技大学 Substrate for flexible organic optoelectric device and preparation thereof
CN101887908A (en) * 2010-03-09 2010-11-17 电子科技大学 Active drive organic electroluminescent device and preparation method thereof
CN101916813A (en) * 2010-07-09 2010-12-15 电子科技大学 Light-emitting diode (LED) and preparation method thereof
CN102208563A (en) * 2011-04-18 2011-10-05 电子科技大学 Substrate for flexible luminescent device and preparation method thereof
CN102299118A (en) * 2011-05-20 2011-12-28 电子科技大学 Method for packaging photoelectronic device
CN103302910A (en) * 2013-06-25 2013-09-18 电子科技大学 Biodegradable flexible conductive base plate and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105618778A (en) * 2015-12-29 2016-06-01 中国石油化工股份有限公司 Preparation method for copper nanotube with copper oxide nano-particles embedded therein
CN107019024A (en) * 2017-03-13 2017-08-08 舟山汇丰冷藏物流发展有限公司 A kind of drying device of large yellow croaker
CN108615971A (en) * 2018-03-07 2018-10-02 厦门信达光电物联科技研究院有限公司 A kind of RFID antenna and preparation method thereof
CN113788686A (en) * 2020-05-26 2021-12-14 中国科学院化学研究所 3D printing ceramic part with complex structure and preparation method and application thereof

Similar Documents

Publication Publication Date Title
CN101425560B (en) Substrate for flexible organic optoelectric device and preparation thereof
CN103594624B (en) A kind of organic field effect tube and preparation method thereof
CN101436644B (en) Substrate for flexible organic optoelectronic device and preparation method thereof
CN102208563B (en) Substrate for flexible luminescent device and preparation method thereof
CN103560207B (en) A kind of organic thin film solar cell and preparation method thereof
CN103579504B (en) A kind of organic thin film solar cell and preparation method thereof
CN103594628B (en) A kind of organic thin film solar cell and preparation method thereof
CN102208540B (en) Substrate for flexible photoelectronic device and preparation method thereof
CN102208545B (en) Substrate for flexible optoelectronic device and preparation method thereof
CN104953029A (en) Biodegradable substrate for flexible photoelectronic device and manufacture method thereof
CN101916814A (en) Light emitting diode and preparation method thereof
CN104953034B (en) Degradable base board for flexible optoelectronic part and preparation method thereof
CN102208541B (en) Flexible substrate used in opto electronic device and preparation method thereof
CN102208539B (en) Substrate for flexible photoelectronic device and preparation method thereof
CN102208555B (en) Substrate used in luminescent device and preparation method thereof
CN101887908B (en) Active drive organic electroluminescent device and preparation method thereof
CN102208544B (en) Substrate for flexible optoelectronic device and preparation method thereof
CN102208537B (en) Substrate for flexible photoelectronic device and preparation method thereof
CN102208564B (en) Flexible substrate used in luminescent device and preparation method thereof
CN104733615A (en) Degradable substrate for flexible photoelectric device and production method of substrate
CN102208549B (en) Flexible substrate used in optoelectronic device and preparation method thereof
CN102208570B (en) Substrate for flexible luminescent device and preparation method thereof
CN102208565B (en) Substrate for flexible luminous device and preparation method thereof
CN102208566A (en) Substrate used in luminescent device and preparation method thereof
CN102208543A (en) Substrate for flexible optoelectronic device and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20150930

RJ01 Rejection of invention patent application after publication