CN104952906B - Pixel structure of display panel - Google Patents
Pixel structure of display panel Download PDFInfo
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- CN104952906B CN104952906B CN201510247569.2A CN201510247569A CN104952906B CN 104952906 B CN104952906 B CN 104952906B CN 201510247569 A CN201510247569 A CN 201510247569A CN 104952906 B CN104952906 B CN 104952906B
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- 239000010410 layer Substances 0.000 claims abstract description 147
- 239000011247 coating layer Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 33
- 239000011368 organic material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000570 polyether Chemical class 0.000 description 2
- 229920001470 polyketone Chemical class 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920006389 polyphenyl polymer Polymers 0.000 description 2
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- RQIPKMUHKBASFK-UHFFFAOYSA-N [O-2].[Zn+2].[Ge+2].[In+3] Chemical compound [O-2].[Zn+2].[Ge+2].[In+3] RQIPKMUHKBASFK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Abstract
A pixel structure of a display panel comprises an active element, a first electrode, a pixel definition layer, a coating layer, a light-emitting layer and a second electrode. The active element is located on the substrate. The first electrode is located above the active element and electrically connected with the active element. The pixel defining layer is positioned on the first electrode, wherein the pixel defining layer is provided with an opening to expose the first electrode. The covering layer covers the pixel defining layer. The light-emitting layer is positioned in the opening and covers the exposed first electrode, wherein the light-emitting layer and the pixel defining layer are separated by the covering layer. The second electrode is positioned on the light-emitting layer. The invention not only reduces the chance of the pixel definition layer absorbing water vapor, but also prevents the pixel definition layer from releasing water vapor to the internal elements of the display panel.
Description
Technical field
The invention relates to a kind of dot structures, and in particular to a kind of dot structure of display panel.
Background technology
It is currently the epoch of a 3C, that is, computer (Computer), communication (Communication) and consumer
The epoch of electronic product (Consumer electronics).In such life, there are many dazzling on the market
Information equipment, for example, mobile phone, PDA, GPS, digital camera and display etc..However, most information equipment is all with plane
Display is as main communication interface.Therefore, diversified in information equipment so that the choosing of flat-panel screens type
Selecting property is also quite diversified, for example, liquid crystal display, plasma display panel and organic light emitting diode display panel etc..
Organic light emitting diode display panel is in addition to high brightness, power saving, high contrast, fast-response time and low
Outside the advantages that driving voltage, the light and short trend of information equipment is also complied with.Therefore, organic light emitting diode display surface in recent years
The product of plate is constantly weeded out the old and bring forth the new.According to the type of drive of organic light emitting diode, it can generally be divided into passive organic light emission
Diode (PMOLED) display panel and active organic light emitting diode (hereinafter referred to as AMOLED) display panel.Wherein,
AMOLED display panels can be used for developing large-sized display panel, so attracting attention.
However, AMOLED display panels contain is formed by film layer (such as by organic material：Pixel defining layer), wherein due to
Organic material has water absorption character, and in the case of high temperature, high current, aqueous vapor will be diffused to by pixel defining layer determines positioned at pixel
Internal element arround adopted layer is (such as：Organic light emitting diode, OLED), make organic light emitting diode failure or leads to pixel edge
Region generates dark space or dim spot, and then makes AMOLED display panel accelerated deteriorations, reduces the reduced service life of panel.
Invention content
The invention relates to a kind of dot structures of display panel, can be spread via pixel defining layer to avoid aqueous vapor
The problem of causing display panel not show normally to the internal element of display panel.
A kind of dot structure of display panel, including active member, first electrode, pixel defining layer, coating layer, luminescent layer
And second electrode.Active member is located on substrate.First electrode is located above active member and is electrically connected with active member.
Pixel defining layer is located in first electrode, and wherein pixel defining layer has opening to expose first electrode.Coating layer coats picture
Plain definition layer.Luminescent layer is located in opening and covers the first electrode being exposed, and wherein luminescent layer is draped over one's shoulders with pixel defining layer
Coating separates.Second electrode is located on luminescent layer.
Based on above-mentioned, since pixel defining layer is coated by coating layer, not only make pixel defining layer absorption aqueous vapor
Chance is reduced, and can more be stopped in pixel defining layer release aqueous vapor to the internal element of display panel.Therefore, display panel of the present invention
Dot structure can stop that the aqueous vapor in pixel defining layer spreads outward to the internal element of display panel, to avoid display panel
Internal element generate dark space or dim spot because of damp failure and/or in pixel edge region, and then ensure that display panel is aobvious
Show service life that is normal and extending display panel.
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail, but not as a limitation of the invention.
Description of the drawings
Figure 1A is the sectional view of the dot structure of the display panel of one embodiment of the invention.
Figure 1B is the partial schematic diagram of the embodiment of Figure 1A of the present invention.
Fig. 2A is the sectional view of the dot structure of the display panel of one embodiment of the invention.
Fig. 2 B are the partial schematic diagrams of the embodiment of Fig. 2A of the present invention.
Wherein, reference numeral
110：Substrate
120：Semiconductor layer
120S：Source area
120C：Channel region
120D：Drain area
125：Semiconductor pattern layer
130：Lock insulating layer
140：Bridging line
150：Protective layer
160:Storage electrode pattern layer
170：Flatness layer
180：First electrode
190：Pixel defining layer
200：Coating layer
210：Luminescent layer
220：Second electrode
B：The bottom of opening
C：Reservior capacitor
D：Drain
D1,D2：The thickness of coating layer
G：Gate
OLED：Organic light emitting diode
S：Source electrode
T：Active member
V1：First opening
V1'：It is open for the first time
V2：Second opening
V2'：Second of opening
V3：Third is open
V4：4th opening
Ws：The side wall of opening
Specific implementation mode
Technical solution of the present invention is described in detail in the following with reference to the drawings and specific embodiments, to be further understood that
The purpose of the present invention, scheme and effect, but it is not intended as the limitation of scope of the appended claims of the present invention.
The dot structure of the present invention is, for example, that can be applied among organic light emitting diode display panel, therefore, in order to detailed
Carefully illustrate that the design of the dot structure of the present invention, the following description are by taking single dot structure as an example with word, and coordinates institute
Accompanying drawings, to explain.This field technology personnel should will be seen that the pel array of organic light emitting diode display panel be by
Multiple same or analogous dot structures are formed.Therefore, this field technology personnel can be according to below for single pixel knot
The explanation of structure, and understand the structure or layout of the pel array in organic light emitting diode display panel.In Figure 1A and Fig. 2A
Active member be to illustrate by taking the active member being electrically connected with organic light emitting diode as an example；Although not being painted in schema
Go out other active members, but in fact, the active element that the structure of other active members is electrically connected with organic light emitting diode
The structure of part is same or similar.
Figure 1A is the sectional view of the dot structure of the display panel of one embodiment of the invention.In order to clearly demonstrate this hair
Bright embodiment, Figure 1A only show the main member of dot structure：The active being electrically connected with organic light emitting diode OLED
Element T, organic light emitting diode OLED and reservior capacitor C.It is not painted that is, Figure 1A omits other components, wherein
The component that these omissions are not painted can have the structure well known to those of ordinary skill in the art, therefore herein not
It repeats again.
Figure 1A is please referred to, dot structure is located on substrate 110, and the material of substrate 110 is, for example, glass, quartz, You Jiju
Close object or metal etc..
Dot structure includes active member T, semiconductor pattern layer 125, bridging line 140, storage electrode pattern layer 160,
One electrode 180, pixel defining layer 190, coating layer 200, luminescent layer 210 and second electrode 220.It is exhausted that dot structure further includes lock
Edge layer 130, protective layer 150 and flatness layer 170.Wherein, semiconductor pattern layer 125, bridging line 140 and storage electrode pattern
Layer 160 constitutes reservior capacitor C.First electrode 180, luminescent layer 210 and second electrode 220 constitute organic light emitting diode
OLED。
Specifically, active member T is located on substrate 110, and includes semiconductor layer 120, gate G, source S and drain
D.Semiconductor layer 120 and semiconductor pattern layer 125 are located on substrate 110, and semiconductor layer 120 has source area 120S, draws
Polar region 120D and channel region 120C, and channel region 120C is between source area 120S and drain area 120D.Wherein, it partly leads
Body layer 120 and semiconductor pattern layer 125 are not attached to each other.The material of semiconductor layer 120 and semiconductor pattern layer 125 is for example
Be non-crystalline silicon, polysilicon, microcrystal silicon, monocrystalline silicon, organic semiconducting materials, oxide semiconductor material (such as：Indium zinc aoxidizes
Object, indium germanium zinc oxide or other suitable materials or combinations of the above) or other suitable materials or containing doping
Object (dopant) is in above-mentioned material or combinations of the above.
Lock insulating pattern 130 is located on semiconductor layer 120 and semiconductor pattern layer 125, and lock insulating pattern 130 has sudden and violent
Expose the first time opening V1 ' of source area 120S and exposes second of opening V2 ' of drain area 120D.Lock insulating pattern
130 material includes silica, silicon nitride, silicon oxynitride, other suitable materials or other suitable materials or above-mentioned
Combination.
Gate G and bridging line 140 are located at the channel region 120C and semiconductor pattern layer 125 of semiconductor layer 120
On, gate G and bridging line 140 are not attached to each other.Wherein, lock insulating pattern 130 is located at semiconductor layer 120 and gate G
Between, and between semiconductor pattern layer 125 and bridging line 140.The material of gate G and bridging line 140 include metal,
Metal oxide, organic conductive material or combinations of the above.
Protective layer 150 is located on gate G and bridging line 140.There is protective layer 150 first opening V1 and second to open
Mouth V2, wherein the first opening V1 is connected with first time opening V1 ' to expose source area 120S；Second opening V2 and second
Opening V2 ' is connected to expose drain area 120D.The material of protective layer 150 include inorganic material (such as：Silica, nitridation
The stack layer of silicon, silicon oxynitride, other suitable materials or above-mentioned at least two kinds materials), organic material (such as：Polyesters
(PET), polyalkenes, poly- propionyl class, polycarbonate-based, polyalkylene oxide class, polyphenyl alkenes, polyethers, polyketone class, polyalcohols, poly-
Aldehydes or other suitable materials or combinations of the above) or other suitable materials or combinations of the above.
Source S and drain D are located on semiconductor layer 120, and storage electrode pattern layer 160 is located at semiconductor pattern layer
On 125.Wherein, source S runs through protective layer 150 and lock insulating pattern through the first opening V1 and the V1 ' that is open for the first time
130 to be electrically connected source area 120S.Drain D through the second opening V2 and second opening V2 ' through protective layer 150 and
Lock insulating pattern 130 is to be electrically connected drain area 120D.So far, semiconductor layer 120, gate G, source S and drain D constitute this
The active member T of embodiment, and semiconductor pattern layer 125, bridging line 140 and storage electrode pattern layer 160 constitute storage electricity
Container C.Active member T and reservior capacitor C electrical connections (not being painted).In the present embodiment, active member T is with top lock
For for polar form membrane transistor, however, the present invention is not limited thereto.According to other embodiment, active member T can also be bottom
Gate type membrane transistor.
Flatness layer 170 is located on active member T and reservior capacitor C.Flatness layer 170, which has, exposes active member T
Drain D third be open V3.First electrode 180 is located on active member T and reservior capacitor C, and covers third opening V3.
Wherein, first electrode 180 by third be open V3 and active member T drain D electrical connections.The material of flatness layer 170 includes
Inorganic material (such as：The stacking of silica, silicon nitride, silicon oxynitride, other suitable materials or above-mentioned at least two kinds materials
Layer), organic material (such as：Polyesters (PET), polyalkenes, poly- propionyl class, polycarbonate-based, polyalkylene oxide class, polyphenyl alkenes,
Polyethers, polyketone class, polyalcohols, polyacetals class or other suitable materials or combinations of the above) or other suitable materials,
Or combinations of the above.
Pixel defining layer 190 is located in first electrode 180.Pixel defining layer 190 has the 4th opening V4, to expose the
One electrode 180.4th opening V4 has bottom B and side wall Ws.In the present embodiment, the material of pixel defining layer 190 is for example
It includes organic material to be, but invention is not limited thereto.
Coating layer 200 is located in pixel defining layer 190, to coat pixel defining layer 190 and expose first electrode 180.
It is D1 (as shown in Figure 1B) that coating layer 200 in pixel defining layer 190, which has a thickness,.Coating layer 200 is more covered in
On the side wall Ws of four openings, and it is D2 (such as Figure 1B institutes that the coating layer 200 on the side wall Ws of the 4th opening, which has a thickness,
Show).Wherein thickness D1 and thickness D2 is, for example, more than 0 micron and to be less than or equal to 1 micron.In the present embodiment, coating layer
200 thickness D1 is, for example, the thickness D2 not equal to coating layer 200, but invention is not limited thereto.In other embodiments, coating
The thickness D1 of layer 200 can also be identical as the thickness D2 of coating layer 200.The material of coating layer 200 includes silicon oxide or silicon nitride.
By taking the present embodiment as an example, if the material of coating layer 200 be oxide or nitride, thickness D1 be more than 0 micron and be less than or
Equal to 1 micron and thickness D2 is more than 0 micron and to be less than or equal to 1 micron.In the present embodiment, due to pixel defining layer 190
It is coated by coating layer 200, therefore when display panel is in during processing procedure or the use of high temperature, not only reduces pixel defining layer
The chance of 190 absorption aqueous vapors, can more stop that pixel defining layer 190 discharges in aqueous vapor to the internal element of display panel, to avoid
The internal element of display panel is because of damp failure.
Luminescent layer 210 is located in the 4th opening V4 and covers the first electrode 180 being exposed.Wherein, luminescent layer 210 with
Pixel defining layer 190 is separated by coating layer 200.Second electrode 220 is located on luminescent layer 210.So far, first electrode
180, luminescent layer 210 and second electrode 220 constitute organic light emitting diode OLED.
In the present embodiment, the material of first electrode 180 and second electrode 220 is the conductions such as metal or metal oxide
Material, invention is not limited thereto.In one embodiment, one of first electrode 180 and second electrode 220 are, for example, metal
Layer, then another one is, for example, transparent electrode layer.The material of the luminescent layer 210 of the present embodiment be by taking luminous organic material as an example, but
The invention is not limited thereto.In an embodiment, luminescent layer 210 can be that the luminescent layer either main light emission layer of single layer is passed plus electronics
The combination of defeated layer, electron injecting layer, electric hole transport layer and electric hole implanted layer.Main light emission layer be, for example, white light emitting material layer or
It is the luminous material layer of other specific coloured light (such as red, green, blue etc.).In another embodiment, can select electron transfer layer,
Electron injecting layer, electric hole transport layer and electric hole implanted layer at least one of which and main light emission layer are arranged in pairs or groups, with constitute two layers, three
The stack layer of layer, four layers or five layers, and then promote the luminous efficiency of luminescent layer 210.In addition, organic light emitting diode OLED's is other
The detailed material of film layer and structure are known to one skilled in the art, therefore repeat no more.
Based on above-mentioned, in this example it is shown that the pixel defining layer of the dot structure of panel is coated by coating layer, because
This is in when display panel during processing procedure or the use of high temperature, not only reduces the chance of pixel defining layer absorption aqueous vapor, more may be used
Stop that pixel defining layer discharges aqueous vapor to organic light emitting diode.In other words, the dot structure of display panel of the present invention can avoid
Cause organic light emitting diode because of damp failure because of the diffusion of moisture in pixel defining layer to organic light emitting diode and/or
Person leads to the problem of dark space or dim spot in pixel edge region, and then ensures that display panel shows normal and extension display panel
Service life.
Fig. 2A is the sectional view of the dot structure of the display panel of another embodiment of the present invention.As shown in Figure 2 A, Fig. 2A
Embodiment volume dot structure it is similar to the dot structure of above-mentioned Figure 1A, therefore same or analogous element is with identical or similar
Symbolic indication, and be not repeated to illustrate.The embodiment of Fig. 2A and the embodiment main difference of Figure 1A are in coating layer 200
In pixel defining layer 190 and pixel defining layer 190 is coated, and coating layer 200 is more covered by the 4th of pixel defining layer 190 the
The first electrode 190 that opening V4 is exposed.In the present embodiment, first electrode 180 is covered by coating layer 200, and is shone
Layer 210 is located on the coating layer 200 in the 4th opening.
Fig. 2 B are the partial schematic diagrams of the embodiment of Fig. 2A of the present invention.Fig. 2 B are please referred to, coating layer 200 is with a thickness
D3, wherein thickness D3 are, for example, more than 0 angstrom and to be less than or equal to 100 angstroms.The material of coating layer 200 includes silica or nitridation
Silicon.By taking the present embodiment as an example, if the material of coating layer 200 be oxide or nitride, thickness D3 be more than 0 angstrom and be less than or
Equal to 100 angstroms.In the present embodiment, it is coated by coating layer 200 by pixel defining layer 190, keeps luminescent layer 210 fixed with pixel
Adopted layer 190 is separated by coating layer 200, therefore during processing procedure of the display panel in high temperature or use, is not only subtracted
Few pixel defining layer 190 adsorbs the chance of aqueous vapor, can more stop that pixel defining layer 190 discharges aqueous vapor to luminescent layer 210, to avoid
Luminescent layer 210 is because of moisture damage.
Thereby, in the present embodiment dot structure can avoid because of the diffusion of moisture in pixel defining layer to organic light emission two
Polar body and cause organic light emitting diode because of damp failure and/or generate asking for dark space or dim spot in pixel edge region
Topic, and then ensure that display panel shows service life that is normal and extending display panel.
In conclusion the pixel defining layer of the dot structure of the present invention is coated by coating layer, therefore at display panel
During the processing procedure of high temperature or use, the chance of pixel defining layer absorption aqueous vapor can be not only reduced, can more stop pixel definition
Layer release aqueous vapor to display panel internal element (such as：Organic light emitting diode).In other words, the picture of display panel of the present invention
Plain structure can avoid cause because of the diffusion of moisture in pixel defining layer to organic light emitting diode organic light emitting diode because by
Tide failure and/or lead to the problem of dark space or dim spot in pixel edge region, and then ensure display panel show normally with
And extend the service life of display panel.
Certainly, the present invention can also have other various embodiments, without deviating from the spirit and substance of the present invention, ripe
It knows those skilled in the art and makes various corresponding change and deformations, but these corresponding changes and change in accordance with the present invention
Shape should all belong to the protection domain of appended claims of the invention.
Claims (7)
1. a kind of dot structure of display panel, which is characterized in that including：
One active member is located on a substrate；
One first electrode is located above the active member and is electrically connected with the active member；
One pixel defining layer is located in the first electrode, and the wherein pixel defining layer has an opening to expose first electricity
Pole；
One coating layer coats the pixel defining layer；
One luminescent layer in the opening and covers the first electrode being exposed, the wherein luminescent layer and the pixel definition
Layer is separated by the coating layer；And
One second electrode is located on the luminescent layer；
Wherein, which directly coats the pixel defining layer, and the coating layer is located at the second electrode and the pixel defining layer
Between, the material of the pixel defining layer includes organic material.
2. the dot structure of display panel as described in claim 1, which is characterized in that the thickness of the coating layer is micro- more than 0
Rice and be less than or equal to 1 micron.
3. the dot structure of display panel as described in claim 1, which is characterized in that the opening of the pixel defining layer has
One bottom and one side wall, which covers the side wall, and the coating layer is more than 0 micron in the thickness on the side wall and is less than
Or it is equal to 1 micron.
4. the dot structure of display panel as described in claim 1, which is characterized in that the coating layer is more covered to be determined by the pixel
The first electrode that the opening of adopted layer is exposed, and the luminescent layer is located on the coating layer.
5. the dot structure of display panel as claimed in claim 4, which is characterized in that the thickness of the coating layer be more than 0 angstrom and
Less than or equal to 100 angstroms.
6. the dot structure of display panel as described in claim 1, which is characterized in that the material of the coating layer includes oxide
Or nitride.
7. the dot structure of display panel as described in claim 1, which is characterized in that the first electrode and the second electrode its
One of be a metal layer, and another is a transparent electrode layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104109537A TWI552334B (en) | 2015-03-25 | 2015-03-25 | Pixel structure of display panel |
| TW104109537 | 2015-03-25 |
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| CN104952906A CN104952906A (en) | 2015-09-30 |
| CN104952906B true CN104952906B (en) | 2018-10-26 |
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| CN108550711A (en) * | 2018-04-23 | 2018-09-18 | 深圳市华星光电半导体显示技术有限公司 | OLED device and its manufacturing method, OLED display |
| CN109671859B (en) * | 2018-12-12 | 2020-05-12 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN110085772A (en) * | 2019-06-04 | 2019-08-02 | 京东方科技集团股份有限公司 | A kind of organic LED display panel and preparation method thereof |
| CN110518053A (en) * | 2019-08-29 | 2019-11-29 | 合肥鑫晟光电科技有限公司 | Display base plate and preparation method thereof, display device |
| CN111725422A (en) * | 2020-06-09 | 2020-09-29 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
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|---|---|---|---|---|
| TW200939339A (en) * | 2008-03-03 | 2009-09-16 | Chi Mei Optoelectronics Corp | Pixel structure, color filter substrate and mathods of fabricating the same |
| CN101847652A (en) * | 2010-04-21 | 2010-09-29 | 友达光电股份有限公司 | Electroluminescent display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI552334B (en) | 2016-10-01 |
| CN104952906A (en) | 2015-09-30 |
| TW201635513A (en) | 2016-10-01 |
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