CN104947194B - A kind of magnetostriction materials and preparation method thereof - Google Patents

A kind of magnetostriction materials and preparation method thereof Download PDF

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CN104947194B
CN104947194B CN201510221641.4A CN201510221641A CN104947194B CN 104947194 B CN104947194 B CN 104947194B CN 201510221641 A CN201510221641 A CN 201510221641A CN 104947194 B CN104947194 B CN 104947194B
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fega
directional solidification
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CN104947194A (en
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蒋成保
吴煜烨
孟崇峥
王敬民
张天丽
刘敬华
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Beihang University
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Abstract

本发明提供一种磁致伸缩材料及其制备方法。该磁致伸缩材料成分为(Fe1‑xGax)100‑yREy,其中0.17≤x≤0.19,0.01≤y≤0.2,RE选自Tb、La、Sm、Dy、Lu、Ho、Er和Tm中的一种或多种。在将按照成分要求配备的Fe、Ga和RE熔炼成母合金铸锭并制成母合金棒后,将母合金棒和<100>取向的FeGa单晶籽晶置于定向凝固设备中,对定向凝固设备抽真空并充入保护气体后,加热使母合金棒完全熔融并且FeGa单晶籽晶上部熔融,将熔融的材料沿着FeGa单晶籽晶下部抽拉到冷却液中进行定向凝固,并控制温度梯度为1×105~9×105K/m,生长速度为1000~20000mm/h。本方法制备的磁致伸缩材料为<100>取向的单晶材料,稀土元素完全固溶到FeGa基体中,其饱和磁场仅为100~500Oe,磁致伸缩系数高达300~1500ppm,综合使用性好,应用前景广阔。

The invention provides a magnetostrictive material and a preparation method thereof. The composition of the magnetostrictive material is (Fe 1‑x Ga x ) 100‑y RE y , wherein 0.17≤x≤0.19, 0.01≤y≤0.2, and RE is selected from Tb, La, Sm, Dy, Lu, Ho, Er and one or more of Tm. After smelting Fe, Ga and RE prepared according to the composition requirements into master alloy ingots and making master alloy rods, the master alloy rods and <100> oriented FeGa single crystal seeds were placed in the directional solidification equipment, and the orientation After the solidification equipment is evacuated and filled with protective gas, it is heated to completely melt the master alloy rod and the upper part of the FeGa single crystal seed crystal, and the molten material is pulled along the lower part of the FeGa single crystal seed crystal into the cooling liquid for directional solidification, and The temperature gradient is controlled to be 1×10 5 -9×10 5 K/m, and the growth rate is 1000-20000 mm/h. The magnetostrictive material prepared by this method is a <100> oriented single crystal material, the rare earth elements are completely dissolved in the FeGa matrix, the saturation magnetic field is only 100-500Oe, the magnetostriction coefficient is as high as 300-1500ppm, and the comprehensive usability is good. , the application prospect is broad.

Description

一种磁致伸缩材料及其制备方法A kind of magnetostrictive material and preparation method thereof

技术领域technical field

本发明涉及一种磁性材料,特别是涉及一种磁致伸缩材料及其制备方法。The invention relates to a magnetic material, in particular to a magnetostrictive material and a preparation method thereof.

背景技术Background technique

磁致伸缩材料作为一类重要的铁磁功能材料,其几何尺寸会随磁化状态的改变在各个方向发生可逆变化,这种磁场诱发的可逆形变被称作磁致伸缩。自1842年焦耳提出磁致伸缩效应以来,磁致伸缩材料就被广泛应用到航空、航海、机器人、新能源、生物医学等诸多领域,在国民经济和工业生产中发挥着重要作用。FeGa合金作为最新一代的磁致伸缩材料,以饱和磁场低、力学性能好、磁致伸缩大等良好的综合使用性能而被广泛关注,成为二十一世纪的战略新材料。As an important class of ferromagnetic functional materials, magnetostrictive materials will reversibly change their geometric dimensions in all directions with changes in the magnetization state. This reversible deformation induced by a magnetic field is called magnetostriction. Since Joule proposed the magnetostrictive effect in 1842, magnetostrictive materials have been widely used in aviation, navigation, robotics, new energy, biomedicine and many other fields, playing an important role in the national economy and industrial production. FeGa alloy, as the latest generation of magnetostrictive material, has attracted widespread attention due to its low saturation magnetic field, good mechanical properties, and large magnetostriction. It has become a strategic new material in the 21st century.

尽管FeGa合金的综合使用性能良好,然而传统的FeGa二元合金饱和磁致伸缩系数仅为Terfenol-D合金的1/5,因此优化工艺制备<100>取向的单晶材料以及设计合金成分使FeGa基体具有更大的磁致伸缩系数,成为进一步提高FeGa基体磁致伸缩性能的必然选择。目前,国内外针对FeGa合金的研究也主要集中在提高磁致伸缩性能和优化材料制备工艺上。Although the comprehensive performance of FeGa alloy is good, the saturation magnetostriction coefficient of traditional FeGa binary alloy is only 1/5 of that of Terfenol-D alloy. The substrate has a larger magnetostrictive coefficient, which becomes an inevitable choice to further improve the magnetostrictive performance of the FeGa substrate. At present, research on FeGa alloys at home and abroad is mainly focused on improving the magnetostrictive properties and optimizing the material preparation process.

公开号为CN101086912A的中国专利公开了一种FeGa-RE系磁致伸缩材料及其制造工艺,该磁致伸缩材料为多晶体。其主要成分为Fe、Ga和RE,其中加入了La、Ce、Pr、Nd、Tb、Dy中的一种或一种以上,含量为0.01-20at%。该磁致伸缩材料的制造工艺包括将原料精炼后的合金浇注成所需要的圆棒、对合金棒用高温度梯度快速凝固法或提拉法或Bridgman法,进行晶体定向生长,最终得到<100>和<110>取向的磁致伸缩材料。然而,该材料的磁致伸缩系数仅为300ppm左右,使用此方法制备的材料磁致伸缩性能未得到明显提升,其原因可能在于稀土原子是以第二相形式析出钉扎在晶界处而并未固溶到FeGa基体中。The Chinese patent with publication number CN101086912A discloses a FeGa-RE system magnetostrictive material and its manufacturing process. The magnetostrictive material is polycrystalline. Its main components are Fe, Ga and RE, wherein one or more of La, Ce, Pr, Nd, Tb and Dy is added, and the content is 0.01-20at%. The manufacturing process of the magnetostrictive material includes casting the alloy after refining the raw material into the required round rod, and using the high temperature gradient rapid solidification method or the pulling method or the Bridgman method on the alloy rod to perform crystal directional growth, and finally obtain <100 > and <110> orientation magnetostrictive materials. However, the magnetostriction coefficient of this material is only about 300ppm, and the magnetostrictive performance of the material prepared by this method has not been significantly improved. The reason may be that the rare earth atoms are precipitated and pinned at the grain boundary in the form of a second phase No solid solution into the FeGa matrix.

公开号为CN103556045A的中国专利公开了一种基于FeGa-RFe2磁晶各向异性补偿原理设计的新型磁致伸缩材料及其制备方法,该磁致伸缩多晶材料的成分为(Fe100-XGaX)Y(RFe2)Z,其中10≤X≤40,Y与Z调节赝二元系中补偿成分的比例Y:Z=1~20,RFe2为TbFe2、SmFe2、DyFe2、HoFe2、ErFe2、TmFe2中的一种或者几种。该专利通过在FeGa合金中添加Tb、Sm等稀土元素,并使用真空甩带工艺制备出<100>取向的单相均匀多晶条带。然而,真空甩带工艺制备的多晶条带厚度仅为几十微米,而且条带样品由于特殊的形状各向异性导致低场(<500Oe)磁致伸缩性能极差(<50ppm),不能满足大功率换能器等磁致伸缩器件对于低场高性能三维晶体材料的使用需求。The Chinese patent with the publication number CN103556045A discloses a novel magnetostrictive material designed based on the principle of FeGa- RFe2 magnetocrystalline anisotropy compensation and its preparation method. The composition of the magnetostrictive polycrystalline material is (Fe 100-X Ga X ) Y (RFe 2 ) Z , where 10≤X≤40, Y and Z adjust the ratio of compensation components in the pseudo-binary system Y:Z=1~20, RFe 2 is TbFe 2 , SmFe 2 , DyFe 2 , One or more of HoFe 2 , ErFe 2 , TmFe 2 . This patent adds rare earth elements such as Tb and Sm to the FeGa alloy, and uses a vacuum spinning process to prepare <100>-oriented single-phase uniform polycrystalline strips. However, the thickness of polycrystalline strips prepared by the vacuum stripping process is only tens of microns, and the low-field (<500Oe) magnetostrictive properties of the strip samples are extremely poor (<50ppm) due to the special shape anisotropy, which cannot meet Magnetostrictive devices such as high-power transducers require the use of low-field high-performance three-dimensional crystal materials.

发明内容Contents of the invention

本发明提供一种磁致伸缩材料,其为<100>取向的单晶材料,并且材料中稀土元素完全固溶到FeGa基体中,不仅磁致伸缩系数明显提高,此外饱和磁场相对较低,综合使用性好。The invention provides a magnetostrictive material, which is a <100>-oriented single crystal material, and the rare earth elements in the material are completely dissolved into the FeGa matrix, so that not only the magnetostrictive coefficient is obviously improved, but also the saturation magnetic field is relatively low, comprehensively Good usability.

本发明还提供一种磁致伸缩材料的制备方法,其操作简单、工艺易于控制,并且能够制得磁致伸缩性能和综合使用性良好的磁致伸缩材料。The invention also provides a preparation method of the magnetostrictive material, which has simple operation, easy process control, and can produce the magnetostrictive material with good magnetostrictive performance and comprehensive usability.

本发明提供一种磁致伸缩材料,其成分为(Fe1-xGax)100-yREy,其中0.17≤x≤0.19,0.01≤y≤0.2,RE选自Tb、La、Sm、Dy、Lu、Ho、Er和Tm中的一种或多种。The invention provides a magnetostrictive material whose composition is (Fe 1-x Ga x ) 100-y RE y , wherein 0.17≤x≤0.19, 0.01≤y≤0.2, and RE is selected from Tb, La, Sm, Dy , one or more of Lu, Ho, Er and Tm.

进一步地,所述磁致伸缩材料的成分为(Fe0.83Ga0.17)99.95Tb0.05、(Fe0.83Ga0.17)99.95Sm0.05、(Fe0.83Ga0.17)99.95Dy0.05、(Fe0.83Ga0.17)99.95Ho0.05、(Fe0.83Ga0.17)99.95Er0.05、(Fe0.83Ga0.17)99.95Tm0.05、(Fe0.81Ga0.19)99.95Tb0.05、(Fe0.81Ga0.19)99.95Sm0.05、(Fe0.81Ga0.19)99.95Dy0.05、(Fe0.81Ga0.19)99.95Ho0.05、(Fe0.81Ga0.19)99.95Er0.05、(Fe0.81Ga0.19)99.95Tm0.05、(Fe0.83Ga0.17)99.97Lu0.03、(Fe0.81Ga0.19)99.96Dy0.04、(Fe0.82Ga0.18)99.98Sm0.02、(Fe0.81Ga0.19)99.9Tm0.1、(Fe0.81Ga0.19)99.8La0.2、(Fe0.82Ga0.18)99.8(HoEr)0.2、(Fe0.83Ga0.17)99.84(SmTm)0.16、(Fe0.82Ga0.18)99.85(HoErTm)0.15或(Fe0.81Ga0.19)99.85(TbDyHo)0.15Further, the composition of the magnetostrictive material is (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 , (Fe 0.83 Ga 0.17 ) 99.95 Sm 0.05 , (Fe 0.83 Ga 0.17 ) 99.95 Dy 0.05 , (Fe 0.83 Ga 0.17 ) 99.95 Ho 0.05 , (Fe 0.83 GA 0.17 ) 99.95 ER 0.05 , (Fe 0.83 GA 0.17 ) 99.95 TM 0.05 , (Fe 0.81 GA 0.19 ) 99.95 TB 0.05 , (Fe 0.81 GA 0.19 ) 99.95 SM 0.05 , (Fe 0.81 GA 0.19 ) 99.95 DY 0.05 , (Fe 0.81 GA 0.19 ) 99.95 HO 0.05 , (Fe 0.81 GA 0.19 ) 99.95 ER 0.05 , (Fe 0.81 GA 0.19 ) 99.95 TM 0.05 , (Fe 0.83 GA 0.17 ) 99.97 Lu 0.03 , (Fe 0.81 GA 0.19 ) 99.96 DY 0.04 , (Fe 0.82 Ga 0.18 ) 99.98 Sm 0.02 , (Fe 0.81 Ga 0.19 ) 99.9 Tm 0.1 , (Fe 0.81 Ga 0.19 ) 99.8 La 0.2 , (Fe 0.82 Ga 0.18 ) 99.8 ( HoEr ) Ga 0.2 , ( HoEr ) 0.2 99.84 (SmTm) 0.16 , (Fe 0.82 Ga 0.18 ) 99.85 (HoErTm) 0.15 or (Fe 0.81 Ga 0.19 ) 99.85 (TbDyHo) 0.15 .

进一步地,所述磁致伸缩材料为<100>取向的单晶材料。特别是,所述磁致伸缩材料在2θ为27°~28°之间具有(200)衍射峰,并且在2θ为56°~57°之间具有(400)衍射峰;此外,该磁致伸缩材料不同晶面族衍射斑点四重对称。Further, the magnetostrictive material is a <100> oriented single crystal material. In particular, the magnetostrictive material has a (200) diffraction peak at 2θ of 27° to 28°, and a (400) diffraction peak at 2θ of 56° to 57°; in addition, the magnetostrictive The diffraction spots of different crystal face groups of the material are four-fold symmetric.

进一步地,所述磁致伸缩材料中,RE在FeGa基体中完全固溶。本发明对所述完全固溶并不严格限制,其中也可以包括基本完全固溶的情形。具体地,可以通过BSE图像上没有或基本没有RE元素析出相的形貌证明RE在FeGa基体中完全固溶。Further, in the magnetostrictive material, RE is completely dissolved in the FeGa matrix. The present invention is not strictly limited to the complete solid solution, which may also include the situation of substantially complete solid solution. Specifically, it can be proved that RE is completely dissolved in the FeGa matrix by the appearance of no or substantially no RE element precipitates on the BSE image.

进一步地,所述磁致伸缩材料存在多条位错线。特别是,多条位错线中的至少两条位错线形成交叉;尤其是,多条位错线相互交叉于一处而形成从该处向四周辐射的放射线状。该位错线的长度可以为30~150nm。Further, there are multiple dislocation lines in the magnetostrictive material. In particular, at least two dislocation lines in the plurality of dislocation lines intersect each other; in particular, the plurality of dislocation lines intersect each other at one place to form radial lines radiating from the place to the surroundings. The length of the dislocation line may be 30-150 nm.

进一步地,所述磁致伸缩材料的饱和磁场为100~500Oe,例如为300~500Oe,优选为300~400Oe,进一步优选为300~350Oe。Further, the saturation magnetic field of the magnetostrictive material is 100-500 Oe, for example, 300-500 Oe, preferably 300-400 Oe, more preferably 300-350 Oe.

进一步地,所述磁致伸缩材料的饱和磁致伸缩系数为300~1500ppm,优选为450~1500ppm,进一步优选为650~1500ppm,更进一步优选为1000~1500ppm。Further, the saturation magnetostriction coefficient of the magnetostrictive material is 300-1500 ppm, preferably 450-1500 ppm, more preferably 650-1500 ppm, still more preferably 1000-1500 ppm.

进一步地,所述磁致伸缩材料为棒状材料,其直径为1~10mm,长度为1~20mm,优选为直径5~10mm,长度10~20mm。Further, the magnetostrictive material is a rod-shaped material with a diameter of 1-10 mm and a length of 1-20 mm, preferably a diameter of 5-10 mm and a length of 10-20 mm.

本发明还提供一种上述任一所述的磁致伸缩材料的制备方法,包括如下步骤:The present invention also provides a method for preparing any one of the magnetostrictive materials described above, comprising the steps of:

1)按照磁致伸缩材料的成分要求配备Fe、Ga和RE原料;1) Prepare Fe, Ga and RE raw materials according to the composition requirements of magnetostrictive materials;

2)将配备的Fe、Ga和RE原料熔炼成母合金铸锭;2) Melting the equipped Fe, Ga and RE raw materials into master alloy ingots;

3)将所述母合金铸锭熔化,并通过真空吸铸制成母合金棒;3) melting the master alloy ingot, and making a master alloy rod by vacuum suction casting;

4)将所述母合金棒和<100>取向的FeGa单晶籽晶置于定向凝固设备中,并使FeGa单晶籽晶下部浸入冷却液,对定向凝固设备抽真空并充入保护气体后,加热使母合金棒完全熔融并且FeGa单晶籽晶上部熔融,将熔融的材料沿着FeGa单晶籽晶下部抽拉到冷却液中进行定向凝固,并且控制所述定向凝固的温度梯度为1×105~9×105K/m,生长速度为1000~20000mm/h,制得所述磁致伸缩材料。4) Place the master alloy rod and <100> oriented FeGa single crystal seed crystal in the directional solidification equipment, and immerse the lower part of the FeGa single crystal seed crystal in the cooling liquid, vacuumize the directional solidification equipment and fill it with protective gas , heating to completely melt the master alloy rod and melt the upper part of the FeGa single crystal seed crystal, draw the molten material along the lower part of the FeGa single crystal seed crystal into the cooling liquid for directional solidification, and control the temperature gradient of the directional solidification to be 1 ×10 5 ~9×10 5 K/m, the growth rate is 1000~20000mm/h, and the magnetostrictive material is produced.

在本发明中,定向凝固指的是在凝固金属(即未熔融金属)和未凝固金属熔融体中建立特定方向的温度梯度(G),使熔融体沿着与热流相反的方向凝固的一种铸造工艺;生长速度指的是将熔融体向冷却液中抽拉的速度。本发明所选择的特定稀土元素具有大尺寸和大磁晶各向异性,同时在上述特定的温度梯度和生长速度下进行定向凝固有利于实现稀土元素在FeGa基体中的完全固溶以及磁致伸缩材料的单晶取向。进一步地,温度梯度优选为1×105~5×105K/m;生长速度(V)优选为1000~10000mm/h,进一步优选为2000~8000mm/h。In the present invention, directional solidification refers to the establishment of a temperature gradient (G) in a specific direction in the solidified metal (that is, unmelted metal) and the unsolidified metal melt, so that the melt solidifies along the direction opposite to the heat flow. Casting process; growth rate refers to the speed at which the melt is drawn into the cooling fluid. The specific rare earth elements selected in the present invention have large size and large magnetocrystalline anisotropy, and at the same time, directional solidification under the above-mentioned specific temperature gradient and growth rate is conducive to realizing complete solid solution and magnetostriction of rare earth elements in the FeGa matrix The single crystal orientation of the material. Furthermore, the temperature gradient is preferably 1×10 5 -5×10 5 K/m; the growth rate (V) is preferably 1000-10000 mm/h, more preferably 2000-8000 mm/h.

本发明在定向凝固时采用<100>取向FeGa单晶籽晶作为籽晶,并且在使用该籽晶时使其成为部分熔融状态;具体地,通过控制加热和冷却的方式使籽晶上部熔融、下部凝固,从而在定向凝固时使固液相变过程中固液界面沿着籽晶下部推进,使籽晶的优势取向被保留,从而新形成的晶体沿着籽晶的晶格堆垛,更易于单晶生长;此外,通过较快的生长速度(1000mm/h以上)使固液界面由凹变平,同时较高的温度梯度(1×105K/m以上)抑制形核,最终导致单晶长大,从而实现稀土元素在FeGa基体中的完全固溶以及磁致伸缩材料的<100>单晶取向。The present invention adopts the <100> orientation FeGa single crystal seed crystal as the seed crystal during directional solidification, and makes it into a partially molten state when using the seed crystal; specifically, the upper part of the seed crystal is melted by controlling heating and cooling, The lower part is solidified, so that the solid-liquid interface advances along the lower part of the seed crystal during the solid-liquid phase transition during directional solidification, so that the dominant orientation of the seed crystal is preserved, so that the newly formed crystals are stacked along the lattice of the seed crystal, and more It is easy to grow single crystal; in addition, the solid-liquid interface is flattened from concave through a faster growth rate (above 1000mm/h), and a higher temperature gradient (above 1×10 5 K/m) inhibits nucleation, which eventually leads to The single crystal grows, so as to realize the complete solid solution of rare earth elements in the FeGa matrix and the <100> single crystal orientation of the magnetostrictive material.

本发明选用的原料Fe、Ga和RE的纯度均大于99.99wt%。The purity of the raw materials Fe, Ga and RE selected in the present invention are all greater than 99.99wt%.

在本发明的步骤4)中,对定向凝固设备抽真空并充入保护气体包括实施以下操作至少一次:In step 4) of the present invention, evacuating the directional solidification equipment and filling the protective gas includes implementing the following operations at least once:

对定向凝固设备抽真空至1.0×10-3~5.0×10-3Pa后充入保护气体,待定向凝固设备内的真空度上升至1.0×10-1~5×10-1Pa后停止充气。Vacuum the directional solidification equipment to 1.0×10 -3 ~ 5.0×10 -3 Pa and then fill it with protective gas, and stop inflating after the vacuum degree in the directional solidification equipment rises to 1.0×10 -1 ~ 5×10 -1 Pa .

优选地,实施上述操作三至四次。Preferably, the above operation is carried out three to four times.

进一步地,本发明步骤4)中,将所述母合金棒和FeGa单晶籽晶上部置于中空石墨加热体的内部,通过感应线圈加热所述石墨加热体,以使母合金棒完全熔融并且FeGa单晶籽晶上部熔融。Further, in step 4) of the present invention, the master alloy rod and the upper part of the FeGa single crystal seed crystal are placed inside the hollow graphite heating body, and the graphite heating body is heated by an induction coil to completely melt the master alloy rod and The upper part of the FeGa single crystal seed crystal is melted.

上述加热方式通过设置在石墨加热体外侧的感应线圈将石墨加热体加热到指定温度之后,通过石墨加热体的热辐射对设置在其内部的材料进行放热,从而实现对材料的加热。该加热方式易于使材料受热均匀,并且可实现较大的热度、较小的径向温度梯度等,有利于材料的单晶取向。The above-mentioned heating method heats the graphite heating body to a specified temperature through the induction coil arranged outside the graphite heating body, and then releases heat to the material arranged inside it through the heat radiation of the graphite heating body, thereby realizing heating of the material. This heating method is easy to heat the material evenly, and can achieve greater heat, smaller radial temperature gradient, etc., which is beneficial to the single crystal orientation of the material.

进一步地,本发明步骤4)中,所述加热包括实施以下操作至少一次:Further, in step 4) of the present invention, the heating includes implementing the following operations at least once:

以30~40℃/min的升温速度将石墨加热体加热至1550~1700℃,待母合金棒和FeGa单晶籽晶上部熔融后保温5~15min,然后以20~30℃/min的降温速度将石墨加热体降温至1450~1550℃并保温3~8min,再以30~40℃/min的升温速度将石墨加热体加热至1550~1700℃并保温5~15min。Heat the graphite heating body to 1550-1700°C at a heating rate of 30-40°C/min, keep the temperature for 5-15 minutes after the master alloy rod and the upper part of the FeGa single crystal seed crystal are melted, and then lower the temperature at a cooling rate of 20-30°C/min Cool the graphite heating body to 1450-1550°C and keep it warm for 3-8 minutes, then heat the graphite heating body to 1550-1700°C at a heating rate of 30-40°C/min and keep it warm for 5-15 minutes.

在本发明中,通过加热使材料的温度超过其熔点温度50~200℃以上,并且采用上述特定方式进行加热不仅有利于材料充分熔融,还有利于熔融体中异质形核的钝化和失效,从而减少熔融体中的异质形核,并有利于材料的单晶取向。优选地,实施上述操作三至四次。In the present invention, the temperature of the material exceeds its melting point by 50-200°C by heating, and heating in the above-mentioned specific way is not only conducive to the full melting of the material, but also to the passivation and failure of heterogeneous nucleation in the melt , thereby reducing heterogeneous nucleation in the melt and favoring single-crystal orientation of the material. Preferably, the above operation is carried out three to four times.

此外,步骤4)中,使FeGa单晶籽晶下部浸入冷却液并且下端接触水冷金属件,所述冷却液为Ga-In合金。In addition, in step 4), the lower part of the FeGa single crystal seed crystal is immersed in the cooling liquid and the lower end contacts the water-cooled metal piece, and the cooling liquid is a Ga-In alloy.

也就是说,本发明可以通过对FeGa单晶籽晶上部进行加热,同时对FeGa单晶籽晶下部进行冷却的方式实现籽晶的部分熔融状态。特别是,在定向凝固时,采用Ga-In合金(液态金属冷却液)和水冷金属件相结合的方式进行冷却,其中采用Ga-In合金对材料的侧面进行冷却,同时采用水冷金属件对材料的下端进行冷却,该方式易于实现较大的温度梯度,同时实现更好的轴向冷却效果。水冷金属件指的是采用水作为冷却介质进行冷却的金属部件,对金属部件的结构和材质不作严格限制,例如可以为水冷铜夹具。That is to say, the present invention can realize the partially molten state of the seed crystal by heating the upper part of the FeGa single crystal seed crystal and cooling the lower part of the FeGa single crystal seed crystal. In particular, during directional solidification, a combination of Ga-In alloy (liquid metal cooling liquid) and water-cooled metal parts is used for cooling, in which Ga-In alloy is used to cool the side of the material, and water-cooled metal parts are used to cool the material. The lower end of the shaft is cooled, which is easy to achieve a large temperature gradient and achieve better axial cooling effect. Water-cooled metal parts refer to metal parts that use water as a cooling medium for cooling, and there are no strict restrictions on the structure and material of the metal parts, such as water-cooled copper fixtures.

进一步地,步骤2)包括:Further, step 2) includes:

将配备的Fe、Ga和RE原料置于熔炼设备中,对熔炼设备抽真空至5.0×10-2~5.0×10-3Pa后充入保护气体,待熔炼设备内的真空度上升至1.0×10-1~5.0×10-1Pa后停止充气,实施上述操作至少一次后,在熔炼电流为100~150A的条件下熔炼原料一次以上,控制每次熔炼的时间为3~5分钟,制成母合金铸锭。Put the equipped Fe, Ga and RE raw materials in the smelting equipment, vacuumize the smelting equipment to 5.0×10 -2 ~5.0×10 -3 Pa, then fill the protective gas, and wait until the vacuum degree in the smelting equipment rises to 1.0× 10 -1 ~ 5.0×10 -1 Pa, stop the inflation, carry out the above operation at least once, melt the raw material more than once under the condition of melting current of 100 ~ 150A, control the time of each melting for 3 ~ 5 minutes, and make Master alloy ingot.

优选地,在上述条件下熔炼原料三至五次。Preferably, the raw material is smelted three to five times under the above conditions.

进一步地,步骤3)包括:Further, step 3) includes:

将所述母合金铸锭置于熔炼设备中,对熔炼设备抽真空至1.0×10-3~5.0×10- 3Pa后充入保护气体,待熔炼设备内的真空度上升至1.0×10-1~5.0×10-1Pa后停止充气,在熔炼电流为100~300A的条件下将所述母合金铸锭熔化成合金液,并将合金液吸铸至模具中制成母合金棒。Place the master alloy ingot in the smelting equipment, vacuumize the smelting equipment to 1.0×10 -3 ~ 5.0×10 - 3 Pa, and then fill the protective gas until the vacuum degree in the smelting equipment rises to 1.0×10 - After 1 to 5.0×10 -1 Pa, the inflation is stopped, and the master alloy ingot is melted into an alloy liquid under the condition of a melting current of 100 to 300A, and the alloy liquid is suction-cast into a mold to make a master alloy rod.

在本发明具体方案中,所述熔炼设备可以为本领域的常规设备,例如真空非自耗电弧熔炼炉;所述保护气体可以为纯度99.99%以上的氩气等。In the specific solution of the present invention, the smelting equipment can be conventional equipment in the field, such as a vacuum non-consumable arc melting furnace; the protective gas can be argon with a purity of 99.99% or more.

本发明的实施,至少具有以下优势:Implementation of the present invention has at least the following advantages:

1、本发明通过在FeGa基体中添加微量的具有大尺寸和大磁晶各向异性的稀土元素,同时结合具有较高的温度梯度和较快的生长速度的定向凝固工艺,从而实现了稀土元素在FeGa基体中的完全固溶以及磁致伸缩材料的<100>单晶取向。1. The present invention realizes rare earth elements by adding a small amount of rare earth elements with large size and large magnetocrystalline anisotropy in the FeGa matrix, and at the same time combining a directional solidification process with a higher temperature gradient and a faster growth rate. Complete solid solution in FeGa matrix and <100> single crystal orientation of magnetostrictive materials.

2、本发明的制备方法操作简单、工艺易于控制、稀土元素添加量少、制备周期短,特别是特定的加热方式有利于材料充分熔融以及熔融体中异质形核的钝化和失效,特定的冷却方式易于获得较大的温度梯度、冷却效果好,制得的磁致伸缩材料的磁致伸缩性能和综合使用性良好,适用范围广泛。2. The preparation method of the present invention is simple in operation, easy to control the process, less in the addition of rare earth elements, and short in the preparation cycle. In particular, the specific heating method is conducive to the full melting of the material and the passivation and failure of heterogeneous nucleation in the melt. The cooling method is easy to obtain a large temperature gradient, and the cooling effect is good. The magnetostrictive performance and comprehensive usability of the prepared magnetostrictive material are good, and the application range is wide.

3、通过本发明制备方法制备的磁致伸缩材料为<100>取向的单晶材料,该材料中稀土元素完全固溶到FeGa基体中,饱和磁场仅为100~500Oe,磁致伸缩系数高达300~1500ppm,综合使用性好,应用前景广阔。3. The magnetostrictive material prepared by the preparation method of the present invention is a <100> oriented single crystal material, and the rare earth elements in the material are completely dissolved in the FeGa matrix, the saturation magnetic field is only 100-500Oe, and the magnetostriction coefficient is as high as 300 ~1500ppm, good comprehensive usability and broad application prospects.

附图说明Description of drawings

图1为本发明实施例1制备的母合金铸锭的BSE图像;Fig. 1 is the BSE image of the master alloy ingot prepared in Example 1 of the present invention;

图2为本发明实施例1制备的母合金棒的XRD图谱;Fig. 2 is the XRD spectrum of the master alloy rod prepared in Example 1 of the present invention;

图3为本发明实施例1制备的磁致伸缩材料的BSE图像;Fig. 3 is the BSE image of the magnetostrictive material prepared in Example 1 of the present invention;

图4为本发明实施例1制备的磁致伸缩材料的同步辐射XRD图谱与Laue衍射图谱。Fig. 4 is the synchrotron radiation XRD pattern and the Laue diffraction pattern of the magnetostrictive material prepared in Example 1 of the present invention.

图5为本发明实施例1采用的Fe83Ga17单晶籽晶的TEM图像;Fig. 5 is a TEM image of the Fe 83 Ga 17 single crystal seed used in Example 1 of the present invention;

图6为本发明实施例1制备的磁致伸缩材料的TEM图像;Fig. 6 is the TEM image of the magnetostrictive material prepared in Example 1 of the present invention;

图7为本发明实施例1采用的Fe83Ga17单晶籽晶及制备的磁致伸缩材料的磁致伸缩曲线。Fig. 7 is the magnetostriction curve of the Fe 83 Ga 17 single crystal seed crystal and the prepared magnetostrictive material used in Example 1 of the present invention.

具体实施方式detailed description

为使本发明的目的、技术方案和优点更加清楚,下面将结合本发明的附图和实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings and embodiments of the present invention. Obviously, the described embodiments are the Some, but not all, embodiments are invented. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

实施例1制备(Fe0.83Ga0.17)99.95Tb0.05 Preparation of Example 1 (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05

制备成分为(Fe0.83Ga0.17)99.95Tb0.05的磁致伸缩材料的方法,包括如下步骤:A method for preparing a magnetostrictive material whose composition is (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 comprises the following steps:

1、配料1. Ingredients

选用的原料Fe、Ga和Tb(RE原料)的纯度均大于99.99wt%,并且为了防止熔炼过程中元素烧损,在按照上述成分配备Fe、Ga和Tb原料时,按照约1wt%的烧损量分别补加Ga和Tb。具体地,称取27.72g的Fe、7.158g的Ga和0.048g的Tb,备用。The purity of the selected raw materials Fe, Ga and Tb (RE raw materials) is greater than 99.99wt%, and in order to prevent the burning of elements during the smelting process, when the Fe, Ga and Tb raw materials are prepared according to the above composition, the burning loss of about 1wt% Add Ga and Tb respectively. Specifically, 27.72g of Fe, 7.158g of Ga and 0.048g of Tb were weighed and set aside.

2、制备母合金铸锭2. Preparation of master alloy ingot

将上述配备的原料Fe、Ga和RE放入真空非自耗电弧熔炼炉的坩埚内,在放置时,将易烧损的金属元素置于坩埚底部,不易烧损的金属元素置于坩埚上方。Put the above-mentioned raw materials Fe, Ga and RE into the crucible of the vacuum non-consumable arc melting furnace. When placing, put the metal elements that are easy to burn at the bottom of the crucible, and the metal elements that are not easy to burn at the top of the crucible .

对真空非自耗电弧熔炼炉进行抽真空至4.0×10-3Pa后,向炉体内充入高纯氩气,氩气的体积百分含量(纯度)为99.99%以上,待炉内的真空度上升至1.0×10-1Pa以后停止充气,反复此步操作三次后,将熔炼电流设置为150A,对原料进行熔炼,控制每次熔炼的时间为4分钟左右,反复熔炼四次,制得母合金铸锭,对该母合金铸锭进行电子探针测试,其背散射电子(BSE)图像如图1所示;从图1可知,铸态下的母合金铸锭材料中Tb元素以第二相的形式广泛分布于FeGa基体晶界处。After the vacuum non-consumable arc melting furnace is evacuated to 4.0×10 -3 Pa, high-purity argon gas is filled into the furnace body. The volume percentage (purity) of argon gas is above 99.99%. After the vacuum degree rises to 1.0×10 -1 Pa, stop inflating. After repeating this step three times, set the melting current to 150A to melt the raw materials. Control the time of each melting to about 4 minutes. Repeat the melting four times to produce Obtain master alloy ingot, this master alloy ingot is carried out electron probe test, its backscattered electron (BSE) image as shown in Figure 1; Known from Fig. 1, Tb element in the master alloy ingot material under as-cast state is The form of the second phase is widely distributed at the grain boundary of FeGa matrix.

3、制备母合金棒3. Preparation of master alloy rods

将上述制得的母合金锭置于真空非自耗电弧熔炼炉内,对真空非自耗电弧熔炼炉抽真空至3.0×10-3Pa后,向炉体内充入体积百分含量为99.99%以上的高纯氩气,待炉内真空度上升至1.0×10-1Pa以后停止充气。Place the master alloy ingot prepared above in a vacuum non-consumable arc melting furnace, and after the vacuum non-consumable arc melting furnace is evacuated to 3.0×10 -3 Pa, fill the furnace with a volume percentage of For the high-purity argon gas with more than 99.99%, stop charging after the vacuum in the furnace rises to 1.0×10 -1 Pa.

将熔炼电流设置为150A,熔炼母合金锭,待母合金锭快要熔化时迅速将熔炼电流调节至300A,对准母合金锭中心、模具孔洞处吹弧,同时打开真空吸铸阀门,利用负压将瞬间熔化的母合金液吸铸到模具中制成母合金棒,其XRD图谱如图2所示;结果表明:该母合金棒为多晶组织,多晶取向以<110>、<100>为主。Set the melting current to 150A to melt the master alloy ingot. When the master alloy ingot is about to melt, quickly adjust the melting current to 300A, aim at the center of the master alloy ingot and blow the arc at the mold hole, and open the vacuum suction casting valve at the same time, using negative pressure The instantly melted master alloy liquid was absorbed and cast into a mold to make a master alloy rod, and its XRD pattern is shown in Figure 2; the results show that the master alloy rod is a polycrystalline structure, and the polycrystalline orientation is <110>, <100> Mainly.

4、制备磁致伸缩材料4. Preparation of magnetostrictive materials

将上述制得的母合金棒外表面打磨均匀,与<100>取向的Fe83Ga17单晶籽晶一同浸泡于丙酮中,在50KHz的频率下超声清洗10min,清洗后放于烘箱内,于120℃烘干20min,获得清洗试样。Grind the outer surface of the above-prepared master alloy rod evenly, soak it in acetone together with the <100> oriented Fe 83 Ga 17 single crystal seed crystal, ultrasonically clean it at a frequency of 50KHz for 10min, put it in an oven after cleaning, and Dry at 120°C for 20 minutes to obtain a cleaned sample.

采用定向凝固炉对材料进行定向凝固,首先将石墨加热体放置在保温圈上,并将保温圈放置在GaIn合金罐上;其次将清洗试样放入氧化铝坩埚中,在放置时,将母合金棒放置在Fe83Ga17单晶籽晶的上方,并将坩埚放置于圆筒形中空石墨加热体内部正中心以及GaIn合金罐的上方;再将坩埚降入GaIn合金罐内,使坩埚内的Fe83Ga17单晶籽晶的下部浸入GaIn合金罐内的GaIn合金并使Fe83Ga17单晶籽晶与母合金棒的接触面位于GaIn合金的液面上方;同时,在籽晶下方设置水冷铜夹具,并使籽晶的下端与水冷铜夹具形成接触,水冷铜夹具采用5℃左右的冷水进行循环冷却。Directional solidification of materials is carried out in a directional solidification furnace. First, the graphite heating body is placed on the heat preservation ring, and the heat preservation ring is placed on the GaIn alloy tank; secondly, the cleaned sample is placed in an alumina crucible. The alloy rod is placed above the Fe 83 Ga 17 single crystal seed crystal, and the crucible is placed in the center of the cylindrical hollow graphite heating body and above the GaIn alloy tank; then the crucible is lowered into the GaIn alloy tank, so that the inside of the crucible The lower part of the Fe 83 Ga 17 single crystal seed crystal is immersed in the GaIn alloy in the GaIn alloy tank and the contact surface of the Fe 83 Ga 17 single crystal seed crystal and the master alloy rod is located above the liquid level of the GaIn alloy; at the same time, under the seed crystal A water-cooled copper jig is set, and the lower end of the seed crystal is brought into contact with the water-cooled copper jig, and the water-cooled copper jig is cooled by circulating cold water at about 5°C.

随后,对定向凝固炉抽真空至3.0×10-3Pa以后,向炉体内充入体积百分含量为99.99%以上的高纯氩气,待炉内真空度上升至1.0×10-1Pa以后停止充气,反复此步操作三次后,以35℃/min的升温速度将石墨加热体加热至1600℃,待母合金棒完全熔融并且Fe83Ga17单晶籽晶上部熔融后保温10min,然后以25℃/min的降温速度将石墨加热体的温度降至1500℃,在该温度下保温5min,再以相同的升温速度将石墨加热体加热至1600℃并保温10min,循环以上操作三次后保温30min,母合金棒完全熔融并且Fe83Ga17单晶籽晶成为上部熔融、下部凝固的部分熔融状态。Subsequently, after vacuuming the directional solidification furnace to 3.0×10 -3 Pa, fill the furnace body with high-purity argon gas with a volume percentage of more than 99.99%, and wait until the vacuum degree in the furnace rises to 1.0×10 -1 Pa Stop inflating, repeat this step three times, and heat the graphite heating body to 1600°C at a heating rate of 35°C/min. After the master alloy rod is completely melted and the upper part of the Fe 83 Ga 17 single crystal seed crystal is melted, keep it warm for 10 minutes, and then use The cooling rate of 25°C/min will reduce the temperature of the graphite heating body to 1500°C, keep it at this temperature for 5 minutes, then heat the graphite heating body to 1600°C at the same heating rate and keep it warm for 10 minutes, repeat the above operation three times and then keep it warm for 30 minutes , the master alloy rod is completely melted and the Fe 83 Ga 17 single crystal seed crystal becomes a partially molten state in which the upper part is molten and the lower part is solidified.

控制温度梯度为1×105K/m,生长速度为20000mm/h,将熔融的材料沿着FeGa单晶籽晶下部平稳地向下抽拉到GaIn合金中进行定向凝固,定向凝固时,通过GaIn合金冷却液对材料侧面进行冷却,同时通过水冷铜夹具对材料下端进行冷却,使单晶生长;待生长结束后,将炉内温度降至室温,取出生长后的单晶,制得成分为(Fe0.83Ga0.17)99.95Tb0.05的棒状磁致伸缩材料(尺寸Φ7mm×20mm),其BSE图像和同步辐射XRD图谱与Laue衍射图谱分别如图3和图4所示,图3表明该磁致伸缩材料中没有RE元素析出相,图4表明该磁致伸缩材料在2θ为27°~28°之间具有(200)衍射峰,并且在2θ为56°~57°之间具有(400)衍射峰,此外,该磁致伸缩材料不同晶面族衍射斑点四重对称。由此说明:该(Fe0.83Ga0.17)99.95Tb0.05磁致伸缩材料中Tb元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料。Control the temperature gradient to 1×10 5 K/m, and the growth rate to 20,000 mm/h. The molten material is pulled down smoothly along the lower part of the FeGa single crystal seed crystal into the GaIn alloy for directional solidification. During directional solidification, through The GaIn alloy cooling liquid cools the side of the material, and at the same time cools the lower end of the material through a water-cooled copper fixture to grow the single crystal; after the growth is completed, the temperature in the furnace is lowered to room temperature, and the grown single crystal is taken out to obtain the composition: (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 rod-shaped magnetostrictive material (size Φ7mm×20mm), its BSE image, synchrotron radiation XRD pattern and Laue diffraction pattern are shown in Figure 3 and Figure 4, respectively, Figure 3 shows that the magnetostrictive There is no RE element precipitated phase in the stretchable material. Figure 4 shows that the magnetostrictive material has a (200) diffraction peak between 2θ of 27° and 28°, and a (400) diffraction peak of 2θ of 56° to 57°. In addition, the diffraction spots of different crystal face groups of the magnetostrictive material are four-fold symmetric. This shows that the Tb element in the (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 magnetostrictive material is completely dissolved in the FeGa matrix, and the material is a <100>-oriented single crystal material.

分别对Fe83Ga17单晶籽晶和制备的(Fe0.83Ga0.17)99.95Tb0.05磁致伸缩材料进行透射电镜测试,沿<100>晶带轴观察材料STEM模式下的暗场像,结果如图5和图6所示。结果表明:普通的Fe83Ga17单晶内部微观组织均匀一致(图5),而制备的(Fe0.83Ga0.17)99.95Tb0.05材料中明显可以观察到大量的位错线,多条位错线相互交叉于一处而形成从该处向四周辐射的放射线状,并且位错线的长度为30~150nm,原因可能在于Tb元素的固溶导致FeGa基体产生四方畸变,畸变导致基体材料中产生了内应力,内应力通过位错线的形式表现出来。The TEM test was carried out on the Fe 83 Ga 17 single crystal seed crystal and the prepared (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 magnetostrictive material, and the dark field image of the material in STEM mode was observed along the <100> crystal zone axis. The results are as follows Figure 5 and Figure 6 show. The results show that the internal microstructure of the ordinary Fe 83 Ga 17 single crystal is uniform (Fig. 5), while a large number of dislocation lines can be observed in the prepared (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 material, and many dislocation lines Intersect each other at one place to form radial lines radiating from this place to the surroundings, and the length of the dislocation line is 30-150nm. The reason may be that the solid solution of Tb element causes the square distortion of the FeGa matrix, and the distortion leads to the generation of dislocation in the matrix material. Internal stress, internal stress is expressed in the form of dislocation lines.

此外,采用磁致伸缩测量系统(北京物科光电技术有限公司生产)测量(Fe0.83Ga0.17)99.95Tb0.05材料和Fe83Ga17单晶的磁致伸缩应变值,其中应变片采用日本共和KFG-1-120-C1-11L3M2R型电阻应变片,结果如图7所示。结果表明:(Fe0.83Ga0.17)99.95Tb0.05材料的饱和磁致伸缩系数为463ppm,其比Fe83Ga17单晶的磁致伸缩系数提高了50%左右;此外,(Fe0.83Ga0.17)99.95Tb0.05材料的饱和磁场仅为300Oe左右,磁致伸缩性能和综合使用性良好。In addition, the magnetostrictive strain value of the (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 material and the Fe 83 Ga 17 single crystal was measured using a magnetostrictive measurement system (produced by Beijing Wuke Optoelectronics Technology Co., Ltd.), where the strain gauges are from Kyowa KFG -1-120-C1-11L3M2R resistance strain gauge, the result is shown in Figure 7. The results show that: (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 material has a saturation magnetostriction coefficient of 463ppm, which is about 50% higher than that of Fe 83 Ga 17 single crystal; in addition, (Fe 0.83 Ga 0.17 ) 99.95 The saturation magnetic field of Tb 0.05 material is only about 300Oe, and the magnetostrictive performance and comprehensive usability are good.

实施例2制备(Fe0.83Ga0.17)99.97Lu0.03 Preparation of Example 2 (Fe 0.83 Ga 0.17 ) 99.97 Lu 0.03

除配料步骤中,称取28.05g的Fe、7.242g的Ga和0.031g的Lu备用;制备磁致伸缩材料步骤中,将石墨加热体加热至1575℃,并控制温度梯度为5×105K/m,生长速度为8000mm/h之外,其它步骤与实施例1相同,制得成分为(Fe0.83Ga0.17)99.97Lu0.03的磁致伸缩材料(尺寸Φ7mm×20mm)。In addition to the batching step, weigh 28.05g of Fe, 7.242g of Ga and 0.031g of Lu for later use; in the step of preparing the magnetostrictive material, heat the graphite heating body to 1575°C, and control the temperature gradient to 5×10 5 K /m, except that the growth rate is 8000mm/h, other steps are the same as in Example 1, and a magnetostrictive material (dimension Φ7mm×20mm) with a composition of (Fe 0.83 Ga 0.17 ) 99.97 Lu 0.03 is produced.

经检测,该(Fe0.83Ga0.17)99.97Lu 0.03磁致伸缩材料中Lu元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.83Ga0.17)99.97Lu0.03材料的饱和磁致伸缩系数为330ppm,饱和磁场为350Oe左右,磁致伸缩性能和综合使用性良好。After testing, the (Fe 0.83 Ga 0.17 ) 99.97 Lu 0.03 magnetostrictive material completely dissolves the Lu element in the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the (Fe 0.83 Ga 0.17 ) 99.97 The saturation magnetostriction coefficient of Lu 0.03 material is 330ppm, the saturation magnetic field is about 350Oe, and the magnetostriction performance and comprehensive usability are good.

实施例3制备(Fe0.81Ga0.19)99.96Dy0.04 Preparation of Example 3 (Fe 0.81 Ga 0.19 ) 99.96 Dy 0.04

制备成分为(Fe0.81Ga0.19)99.96Dy0.04的磁致伸缩材料的方法,包括如下步骤:The preparation composition is the method for the magnetostrictive material of (Fe 0.81 Ga 0.19 ) 99.96 Dy 0.04 , comprises the following steps:

1、配料1. Ingredients

称取27.88g的Fe、8.25g的Ga和0.04g的Dy,备用。Weigh 27.88g of Fe, 8.25g of Ga and 0.04g of Dy for later use.

2、制备母合金铸锭2. Preparation of master alloy ingot

将上述配备的原料Fe、Ga和Dy放入真空非自耗电弧熔炼炉的坩埚内,对真空非自耗电弧熔炼炉进行抽真空至1.0×10-3Pa后,向炉体内充入纯度为99.99%以上的高纯氩气,待炉内的真空度上升至5.0×10-1Pa以后停止充气,反复此步操作三次后,将熔炼电流设置为120A,对原料进行熔炼,控制每次熔炼的时间为5分钟左右,反复熔炼四次,制得母合金铸锭。Put the above-mentioned raw materials Fe, Ga and Dy into the crucible of the vacuum non-consumable arc melting furnace, vacuumize the vacuum non-consumable arc melting furnace to 1.0×10 -3 Pa, and fill the furnace body with For high-purity argon with a purity of more than 99.99%, stop inflating after the vacuum degree in the furnace rises to 5.0×10 -1 Pa. After repeating this step three times, set the melting current to 120A to melt the raw materials. The time for the first smelting is about 5 minutes, and the smelting is repeated four times to obtain the master alloy ingot.

3、制备母合金棒3. Preparation of master alloy rods

将上述制得的母合金锭置于真空非自耗电弧熔炼炉内,对真空非自耗电弧熔炼炉抽真空至1.0×10-3Pa后,向炉体内充入纯度为99.99%以上的高纯氩气,待炉内真空度上升至5.0×10-1Pa以后停止充气。Place the master alloy ingot prepared above in a vacuum non-consumable arc melting furnace, and after the vacuum non-consumable arc melting furnace is evacuated to 1.0×10 -3 Pa, fill the furnace body with The high-purity argon gas is used, and the gas filling is stopped after the vacuum degree in the furnace rises to 5.0×10 -1 Pa.

将熔炼电流设置为120A,熔炼母合金锭,待母合金锭快要熔化时迅速将熔炼电流调节至300A,对准母合金锭中心、模具孔洞处吹弧,同时打开真空吸铸阀门,利用负压将瞬间熔化的母合金液吸铸到模具中制成母合金棒,该母合金棒为多晶组织,多晶取向以<110>、<100>为主。Set the melting current to 120A to melt the master alloy ingot. When the master alloy ingot is about to melt, quickly adjust the melting current to 300A, aim at the center of the master alloy ingot and blow the arc at the mold hole, and open the vacuum suction casting valve at the same time, using negative pressure The instantly melted master alloy liquid is suction-cast into a mold to make a master alloy rod, which has a polycrystalline structure, and the polycrystalline orientation is mainly <110> and <100>.

4、制备磁致伸缩材料4. Preparation of magnetostrictive materials

对上述制得的母合金棒和<100>取向的Fe81Ga19单晶籽晶进行清洗,获得清洗试样。The above-prepared master alloy rod and <100> oriented Fe 81 Ga 19 single crystal seed crystal were cleaned to obtain a cleaned sample.

采用定向凝固炉对材料进行定向凝固,按照实施例1方法放置好材料后,对定向凝固炉抽真空至1.0×10-3Pa,向炉体内充入纯度为99.99%以上的高纯氩气,待炉内真空度上升至5.0×10-1Pa以后停止充气,反复此步操作三次后,以40℃/min的升温速度将石墨加热体加热至1575℃,待母合金棒完全熔融并且Fe81Ga19单晶籽晶上部熔融后保温5min,然后以30℃/min的降温速度将石墨加热体的温度降至1500℃,在该温度下保温3min,再以相同的升温速度将石墨加热体加热至1575℃并保温5min,循环以上操作三次后保温30min,母合金棒完全熔融并且Fe81Ga19单晶籽晶成为上部熔融、下部凝固的部分熔融状态。Use a directional solidification furnace to directional solidify the material. After placing the material according to the method in Example 1, evacuate the directional solidification furnace to 1.0×10 -3 Pa, and fill the furnace body with high-purity argon gas with a purity of more than 99.99%. After the vacuum degree in the furnace rises to 5.0×10 -1 Pa, stop inflating. After repeating this step three times, heat the graphite heating body to 1575°C at a heating rate of 40°C/min. After the master alloy rod is completely melted and the Fe 81 Melt the upper part of the Ga 19 single crystal seed and keep it warm for 5 minutes, then lower the temperature of the graphite heating body to 1500 °C at a cooling rate of 30 °C/min, keep it at this temperature for 3 minutes, and then heat the graphite heating body at the same heating rate Heat to 1575°C and hold for 5 minutes, repeat the above operation three times and then hold for 30 minutes, the master alloy rod is completely melted and the Fe 81 Ga 19 single crystal seed crystal becomes a partially molten state in which the upper part is molten and the lower part is solidified.

控制温度梯度为4×105K/m,生长速度为5000mm/h,将熔融的材料沿着FeGa单晶籽晶下部平稳地向下抽拉到GaIn合金中进行定向凝固,定向凝固时,通过GaIn合金冷却液对材料侧面进行冷却,同时通过水冷铜夹具对材料下端进行冷却,使单晶生长;待生长结束后,将炉内温度降至室温,取出生长后的单晶,制得成分为(Fe0.81Ga0.19)99.96Dy0.04的磁致伸缩材料(尺寸Φ7mm×20mm)。Control the temperature gradient to 4×10 5 K/m, and the growth rate to 5000mm/h. The molten material is pulled down smoothly along the lower part of the FeGa single crystal seed crystal into the GaIn alloy for directional solidification. During directional solidification, through The GaIn alloy cooling liquid cools the side of the material, and at the same time cools the lower end of the material through a water-cooled copper fixture to grow the single crystal; after the growth is completed, the temperature in the furnace is lowered to room temperature, and the grown single crystal is taken out to obtain the composition: (Fe 0.81 Ga 0.19 ) 99.96 Dy 0.04 magnetostrictive material (size Φ7mm×20mm).

经检测,该(Fe0.81Ga0.19)99.96Dy0.04磁致伸缩材料中Dy元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.81Ga0.19)99.96Dy0.04材料的饱和磁致伸缩系数为454ppm,饱和磁场为300Oe左右,磁致伸缩性能和综合使用性良好。It has been detected that the Dy element in the (Fe 0.81 Ga 0.19 ) 99.96 Dy 0.04 magnetostrictive material is completely dissolved in the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the (Fe 0.81 Ga 0.19 ) 99.96 The saturation magnetostriction coefficient of the Dy 0.04 material is 454ppm, the saturation magnetic field is about 300Oe, and the magnetostriction performance and comprehensive usability are good.

实施例4制备(Fe0.82Ga0.18)99.98Sm0.02 Preparation of Example 4 (Fe 0.82 Ga 0.18 ) 99.98 Sm 0.02

除配料步骤中,称取28.12g的Fe、7.79g的Ga和0.019g的Sm备用;制备磁致伸缩材料步骤中,采用Fe82Ga18单晶籽晶作为籽晶,并控制温度梯度为10×105K/m,生长速度为1000mm/h之外,其它步骤与实施例1相同,制得成分为(Fe0.82Ga0.18)99.98Sm0.02的磁致伸缩材料(尺寸Φ7mm×20mm)。In addition to the batching step, 28.12g of Fe, 7.79g of Ga and 0.019g of Sm were weighed for subsequent use; in the step of preparing magnetostrictive material, Fe 82 Ga 18 single crystal seed crystal was used as the seed crystal, and the temperature gradient was controlled to be 10 ×10 5 K/m, except that the growth rate is 1000mm/h, the other steps are the same as in Example 1, and a magnetostrictive material (dimension Φ7mm×20mm) with a composition of (Fe 0.82 Ga 0.18 ) 99.98 Sm 0.02 is obtained.

经检测,该(Fe0.82Ga0.18)99.98Sm0.02磁致伸缩材料中Sm元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.82Ga0.18)99.98Sm0.02材料的饱和磁致伸缩系数为315ppm,饱和磁场为400Oe左右,磁致伸缩性能和综合使用性良好。After testing, the Sm element in the (Fe 0.82 Ga 0.18 ) 99.98 Sm 0.02 magnetostrictive material is completely dissolved in the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the (Fe 0.82 Ga 0.18 ) 99.98 The saturation magnetostriction coefficient of the Sm 0.02 material is 315ppm, the saturation magnetic field is about 400Oe, and the magnetostriction performance and comprehensive usability are good.

实施例5制备(Fe0.81Ga0.19)99.9Tm0.1 Preparation of (Fe 0.81 Ga 0.19 ) 99.9 Tm 0.1 in Example 5

制备成分为(Fe0.81Ga0.19)99.9Tm0.1的磁致伸缩材料的方法,包括如下步骤:The method for preparing the magnetostrictive material whose composition is (Fe 0.81 Ga 0.19 ) 99.9 Tm 0.1 comprises the following steps:

1、配料1. Ingredients

称取27.76g的Fe、8.21g的Ga和0.105g的Tm,备用。Weigh 27.76g of Fe, 8.21g of Ga and 0.105g of Tm for later use.

2、制备母合金铸锭2. Preparation of master alloy ingot

将上述配备的原料Fe、Ga和Tm放入真空非自耗电弧熔炼炉的坩埚内,对真空非自耗电弧熔炼炉进行抽真空至5.0×10-2Pa后,向炉体内充入纯度为99.99%以上的高纯氩气,待炉内的真空度上升至1.0×10-1Pa以后停止充气,反复此步操作三次后,将熔炼电流设置为100A,对原料进行熔炼,控制每次熔炼的时间为5分钟左右,反复熔炼四次,制得母合金铸锭。Put the above-mentioned raw materials Fe, Ga and Tm into the crucible of the vacuum non-consumable arc melting furnace, vacuumize the vacuum non-consumable arc melting furnace to 5.0×10 -2 Pa, and fill the furnace body with For high-purity argon gas with a purity of more than 99.99%, stop inflating after the vacuum degree in the furnace rises to 1.0×10 -1 Pa. After repeating this step three times, set the melting current to 100A to melt the raw materials. The time for the first smelting is about 5 minutes, and the smelting is repeated four times to obtain the master alloy ingot.

3、制备母合金棒3. Preparation of master alloy rods

将上述制得的母合金锭置于真空非自耗电弧熔炼炉内,对真空非自耗电弧熔炼炉抽真空至5.0×10-2Pa后,向炉体内充入纯度为99.99%以上的高纯氩气,待炉内真空度上升至1.0×10-1Pa以后停止充气。Place the master alloy ingot prepared above in a vacuum non-consumable arc melting furnace, and after the vacuum non-consumable arc melting furnace is evacuated to 5.0×10 -2 Pa, fill the furnace body with The high-purity argon gas is used, and the gas filling is stopped after the vacuum degree in the furnace rises to 1.0×10 -1 Pa.

将熔炼电流设置为100A,熔炼母合金锭,待母合金锭快要熔化时迅速将熔炼电流调节至300A,对准母合金锭中心、模具孔洞处吹弧,同时打开真空吸铸阀门,利用负压将瞬间熔化的母合金液吸铸到模具中制成母合金棒,该母合金棒为多晶组织,多晶取向以<110>、<100>为主。Set the melting current to 100A to melt the master alloy ingot. When the master alloy ingot is about to melt, quickly adjust the melting current to 300A, aim at the center of the master alloy ingot and blow the arc at the mold hole, and open the vacuum suction casting valve at the same time, using negative pressure The instantly melted master alloy liquid is suction-cast into a mold to make a master alloy rod, which has a polycrystalline structure, and the polycrystalline orientation is mainly <110> and <100>.

4、制备磁致伸缩材料4. Preparation of magnetostrictive materials

对上述制得的母合金棒和<100>取向的Fe81Ga19单晶籽晶进行清洗,获得清洗试样。The above-prepared master alloy rod and <100> oriented Fe 81 Ga 19 single crystal seed crystal were cleaned to obtain a cleaned sample.

采用定向凝固炉对材料进行定向凝固,按照实施例1方法放置好材料后,对定向凝固炉抽真空至5.0×10-2Pa,向炉体内充入纯度为99.99%以上的高纯氩气,待炉内真空度上升至1.0×10-1Pa以后停止充气,反复此步操作三次后,以30℃/min的升温速度将石墨加热体加热至1650℃,待母合金棒完全熔融并且Fe81Ga19单晶籽晶上部熔融后保温15min,然后以20℃/min的降温速度将石墨加热体的温度降至1500℃,在该温度下保温8min,再以相同的升温速度将石墨加热体加热至1650℃并保温15min,循环以上操作三次后保温35min,母合金棒完全熔融并且Fe81Ga19单晶籽晶成为上部熔融、下部凝固的部分熔融状态。Use a directional solidification furnace to directional solidify the material. After placing the material according to the method in Example 1, vacuum the directional solidification furnace to 5.0×10 -2 Pa, and fill the furnace body with high-purity argon gas with a purity of more than 99.99%. After the vacuum degree in the furnace rises to 1.0×10 -1 Pa, stop inflating. After repeating this step three times, heat the graphite heating body to 1650°C at a heating rate of 30°C/min. After the master alloy rod is completely melted and the Fe 81 Melt the upper part of the Ga 19 single crystal seed crystal and keep it warm for 15 minutes, then lower the temperature of the graphite heating body to 1500 °C at a cooling rate of 20 °C/min, keep it at this temperature for 8 minutes, and then heat the graphite heating body at the same heating rate to 1650°C and keep it warm for 15 minutes, repeat the above operation three times and keep it warm for 35 minutes, the master alloy rod is completely melted and the Fe 81 Ga 19 single crystal seed crystal becomes a partially molten state in which the upper part is molten and the lower part is solidified.

控制温度梯度为5×105K/m,生长速度为6000mm/h,将熔融的材料沿着FeGa单晶籽晶下部平稳地向下抽拉到GaIn合金中进行定向凝固,定向凝固时,通过GaIn合金冷却液对材料侧面进行冷却,同时通过水冷铜夹具对材料下端进行冷却,使单晶生长;待生长结束后,将炉内温度降至室温,取出生长后的单晶,制得成分为(Fe0.81Ga0.19)99.9Tm0.1的磁致伸缩材料(尺寸Φ7mm×20mm)。Control the temperature gradient to 5×10 5 K/m, and the growth rate to 6000mm/h. The molten material is pulled down smoothly along the lower part of the FeGa single crystal seed crystal into the GaIn alloy for directional solidification. During directional solidification, through The GaIn alloy cooling liquid cools the side of the material, and at the same time cools the lower end of the material through a water-cooled copper fixture to grow the single crystal; after the growth is completed, the temperature in the furnace is lowered to room temperature, and the grown single crystal is taken out to obtain the composition: (Fe 0.81 Ga 0.19 ) 99.9 Tm 0.1 magnetostrictive material (size Φ7mm×20mm).

经检测,该(Fe0.81Ga0.19)99.9Tm0.1磁致伸缩材料中Tm元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.81Ga0.19)99.9Tm0.1材料的饱和磁致伸缩系数为667ppm,饱和磁场为370Oe左右,磁致伸缩性能和综合使用性良好。After testing, the Tm element in the (Fe 0.81 Ga 0.19 ) 99.9 Tm 0.1 magnetostrictive material is completely dissolved in the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the (Fe 0.81 Ga 0.19 ) 99.9 The saturation magnetostriction coefficient of Tm 0.1 material is 667ppm, the saturation magnetic field is about 370Oe, and the magnetostriction performance and comprehensive usability are good.

实施例6制备(Fe0.81Ga0.19)99.8La0.2 Preparation of Example 6 (Fe 0.81 Ga 0.19 ) 99.8 La 0.2

除配料步骤中,称取27.55g的Fe、8.15g的Ga、0.086g的La备用;制备磁致伸缩材料步骤中,采用Fe81Ga19单晶籽晶作为籽晶,并将石墨加热体加热至1650℃,此外控制温度梯度为8×105K/m,生长速度为7000mm/h之外,其它步骤与实施例1相同,制得成分为(Fe0.81Ga0.19)99.8La0.2的磁致伸缩材料(尺寸Φ7mm×20mm)。In addition to the batching step, weigh 27.55g of Fe, 8.15g of Ga, and 0.086g of La for later use; in the step of preparing magnetostrictive materials, use Fe 81 Ga 19 single crystal seed crystal as the seed crystal, and heat the graphite heating body to 1650°C, except that the temperature gradient is controlled to be 8×10 5 K/m, and the growth rate is 7000 mm/h, the other steps are the same as in Example 1, and a magnetotropic film with a composition of (Fe 0.81 Ga 0.19 ) 99.8 La 0.2 is obtained. Telescopic material (size Φ7mm×20mm).

经检测,该(Fe0.81Ga0.19)99.8La0.2磁致伸缩材料中La元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.81Ga0.19)99.8La0.2材料的饱和磁致伸缩系数为1316ppm,饱和磁场为500Oe左右,磁致伸缩性能和综合使用性良好。It has been detected that the (Fe 0.81 Ga 0.19 ) 99.8 La 0.2 magnetostrictive material completely dissolves the La element into the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the (Fe 0.81 Ga 0.19 ) 99.8 The saturation magnetostriction coefficient of the La 0.2 material is 1316ppm, the saturation magnetic field is about 500Oe, and the magnetostriction performance and comprehensive usability are good.

实施例7制备(Fe0.82Ga0.18)99.8(HoEr)0.2 Preparation of Example 7 (Fe 0.82 Ga 0.18 ) 99.8 (HoEr) 0.2

除配料步骤中,称取27.3g的Fe、7.55g的Ga、0.099g的Ho和0.1g的Er备用;制备磁致伸缩材料步骤中,采用Fe82Ga18单晶籽晶作为籽晶,并将石墨加热体加热至1650℃,此外控制温度梯度为3×105K/m,生长速度为4000mm/h之外,其它步骤与实施例1相同,制得成分为(Fe0.82Ga0.18)99.8(HoEr)0.2的磁致伸缩材料(尺寸Φ7mm×20mm)。In addition to the batching step, take 27.3g of Fe, 7.55g of Ga, 0.099g of Ho and 0.1g of Er for subsequent use; in the step of preparing magnetostrictive material, adopt Fe 82 Ga 18 single crystal seed crystal as seed crystal, and The graphite heating body was heated to 1650°C, and the temperature gradient was controlled to be 3×10 5 K/m, and the growth rate was 4000mm/h. The other steps were the same as in Example 1, and the obtained composition was (Fe 0.82 Ga 0.18 ) 99.8 (HoEr) 0.2 magnetostrictive material (size Φ7mm×20mm).

经检测,该(Fe0.82Ga0.18)99.8(HoEr)0.2磁致伸缩材料为<100>取向的单晶材料;此外,该(Fe0.82Ga0.18)99.8(HoEr)0.2材料的饱和磁致伸缩系数为1120ppm,饱和磁场为490Oe左右,磁致伸缩性能和综合使用性良好。After testing, the (Fe 0.82 Ga 0.18 ) 99.8 (HoEr) 0.2 magnetostrictive material is a <100> oriented single crystal material; in addition, the saturation magnetostrictive coefficient of the (Fe 0.82 Ga 0.18 ) 99.8 (HoEr) 0.2 material It is 1120ppm, the saturation magnetic field is about 490Oe, and the magnetostrictive performance and comprehensive usability are good.

实施例8制备(Fe0.83Ga0.17)99.84(SmTm)0.16 Preparation of Example 8 (Fe 0.83 Ga 0.17 ) 99.84 (SmTm) 0.16

除配料步骤中,称取28.39g的Fe、7.33g的Ga、0.075g的Sm和0.084g的Tm备用;制备磁致伸缩材料步骤中,将石墨加热体加热至1650℃,并控制温度梯度为2×105K/m,生长速度为10000mm/h之外,其它步骤与实施例1相同,制得成分为(Fe0.83Ga0.17)99.84(SmTm)0.16的磁致伸缩材料(尺寸Φ7mm×20mm)。Except in the batching step, the Fe of 28.39g, the Ga of 7.33g, the Sm of 0.075g and the Tm of 0.084g are standby; 2×10 5 K/m, except that the growth rate is 10000mm/h, the other steps are the same as in Example 1 , and the magnetostrictive material (size Φ7mm × 20mm ).

经检测,该(Fe0.83Ga0.17)99.84(SmTm)0.16磁致伸缩材料中Sm和Tm元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.83Ga0.17)99.84(SmTm)0.16材料的饱和磁致伸缩系数为998ppm,饱和磁场为500Oe左右,磁致伸缩性能和综合使用性良好。After testing, the Sm and Tm elements in the (Fe 0.83 Ga 0.17 ) 99.84 (SmTm) 0.16 magnetostrictive material are completely dissolved in the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the (Fe 0.83 The saturation magnetostriction coefficient of Ga 0.17 ) 99.84 (SmTm) 0.16 material is 998ppm, the saturation magnetic field is about 500Oe, and the magnetostriction performance and comprehensive usability are good.

实施例9制备(Fe0.82Ga0.18)99.85(HoErTm)0.15 Preparation of Example 9 (Fe 0.82 Ga 0.18 ) 99.85 (HoErTm) 0.15

除配料步骤中,称取28.53g的Fe、7.63g的Ga、0.052g的Ho、0.052g的Er和0.053g的Tm备用;制备磁致伸缩材料步骤中,采用Fe82.5Ga17.5单晶籽晶作为籽晶,并将石墨加热体加热至1675℃,此外控制温度梯度为5×105K/m,生长速度为3000mm/h之外,其它步骤与实施例1相同,制得成分为(Fe0.82Ga0.18)99.85(HoErTm)0.15的磁致伸缩材料(尺寸Φ7mm×20mm)。In addition to the batching step, weigh 28.53g of Fe, 7.63g of Ga, 0.052g of Ho, 0.052g of Er and 0.053g of Tm for later use; in the step of preparing magnetostrictive materials, use Fe 82.5 Ga 17.5 single crystal seed As a seed crystal, the graphite heating body is heated to 1675°C, and the temperature gradient is controlled to be 5×10 5 K/m, and the growth rate is 3000 mm/h. The other steps are the same as in Example 1, and the obtained composition is (Fe 0.82 Ga 0.18 ) 99.85 (HoErTm) 0.15 magnetostrictive material (size Φ7mm×20mm).

经检测,该(Fe0.82Ga0.18)99.85(HoErTm)0.15磁致伸缩材料中Ho、Er和Tm元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.82Ga0.18)99.85(HoErTm)0.15材料的饱和磁致伸缩系数为1015ppm,饱和磁场为500Oe左右,磁致伸缩性能和综合使用性良好。After testing, the Ho, Er and Tm elements in the (Fe 0.82 Ga 0.18 ) 99.85 (HoErTm) 0.15 magnetostrictive material are completely dissolved in the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the ( The saturation magnetostriction coefficient of Fe 0.82 Ga 0.18 ) 99.85 (HoErTm) 0.15 material is 1015ppm, the saturation magnetic field is about 500Oe, and the magnetostriction performance and comprehensive usability are good.

实施例10制备(Fe0.81Ga0.19)99.85(TbDyHo)0.15 Preparation of Example 10 (Fe 0.81 Ga 0.19 ) 99.85 (TbDyHo) 0.15

除配料步骤中,称取27.92g的Fe、8.26g的Ga、0.049g的Tb、0.05g的Dy和0.051g的Ho备用;制备磁致伸缩材料步骤中,采用Fe81Ga19单晶籽晶作为籽晶,并将石墨加热体加热至1650℃,此外控制温度梯度为1×105K/m,生长速度为15000mm/h之外,其它步骤与实施例1相同,制得成分为(Fe0.81Ga0.19)99.85(TbDyHo)0.15的磁致伸缩材料(尺寸Φ7mm×20mm)。In addition to the batching step, weigh 27.92g of Fe, 8.26g of Ga, 0.049g of Tb, 0.05g of Dy and 0.051g of Ho for later use; in the step of preparing magnetostrictive material, use Fe 81 Ga 19 single crystal seed As a seed crystal, the graphite heating body is heated to 1650°C. In addition, the temperature gradient is controlled to be 1×10 5 K/m, and the growth rate is 15000 mm/h. The other steps are the same as in Example 1, and the obtained composition is (Fe 0.81 Ga 0.19 ) 99.85 (TbDyHo) 0.15 magnetostrictive material (size Φ7mm×20mm).

经检测,该(Fe0.81Ga0.19)99.85(TbDyHo)0.15磁致伸缩材料中Tb、Dy和Ho元素完全固溶到FeGa基体中,并且材料为<100>取向的单晶材料;此外,该(Fe0.81Ga0.19)99.85(TbDyHo)0.15材料的饱和磁致伸缩系数为1300ppm,饱和磁场为490Oe左右,磁致伸缩性能和综合使用性良好。After testing, the Tb, Dy and Ho elements in the (Fe 0.81 Ga 0.19 ) 99.85 (TbDyHo) 0.15 magnetostrictive material are completely dissolved in the FeGa matrix, and the material is a <100>-oriented single crystal material; in addition, the ( The saturation magnetostriction coefficient of Fe 0.81 Ga 0.19 ) 99.85 (TbDyHo) 0.15 material is 1300ppm, the saturation magnetic field is about 490Oe, and the magnetostriction performance and comprehensive usability are good.

对比例1Comparative example 1

对实施例1制得的母合金棒进行清洗,获得清洗试样。将清洗试样放入定向凝固炉的氧化铝坩埚中,对定向凝固炉抽真空至3.0×10-3Pa以后,向炉体内充入纯度为99.99%以上的高纯氩气,待炉内真空度上升至1.0×10-1Pa以后停止充气,反复此步操作三次后,将母合金棒在1600℃左右加热至熔融状态。The master alloy rod prepared in Example 1 was cleaned to obtain a cleaned sample. Put the cleaned sample into the alumina crucible of the directional solidification furnace, and after vacuuming the directional solidification furnace to 3.0×10 -3 Pa, fill the furnace body with high-purity argon gas with a purity of more than 99.99%, and wait for the furnace to vacuum After the temperature rises to 1.0×10 -1 Pa, the inflation is stopped. After repeating this step three times, the master alloy rod is heated to a molten state at about 1600°C.

控制温度梯度为1×102K/m,生长速度为500mm/h,将熔融的材料平稳地抽拉到GaIn合金中,在定向凝固时进行单晶生长;待生长结束后,将炉内温度降至室温,取出生长后的单晶,制得成分为(Fe0.83Ga0.17)99.95Tb0.05的磁致伸缩材料(尺寸Φ7mm×20mm)。Control the temperature gradient to 1×10 2 K/m, and the growth rate to 500mm/h, draw the molten material into the GaIn alloy smoothly, and perform single crystal growth during directional solidification; after the growth is completed, lower the temperature in the furnace to After cooling down to room temperature, the grown single crystal was taken out to obtain a magnetostrictive material (diameter Φ7mm×20mm) with a composition of (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 .

经检测,该(Fe0.83Ga0.17)99.95Tb 0.05磁致伸缩材料中Tb元素并未完全固溶到FeGa基体中,而是以析出钉扎在晶界处,并且该材料为<100>和<110>取向的多晶材料;此外,该(Fe0.83Ga0.17)99.95Tb 0.05材料的饱和磁致伸缩系数为300ppm左右,材料的性能并未明显提高。It was detected that the Tb element in the (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 magnetostrictive material did not completely dissolve into the FeGa matrix, but was pinned at the grain boundary by precipitation, and the material was <100> and <110> oriented polycrystalline material; in addition, the saturation magnetostriction coefficient of the (Fe 0.83 Ga 0.17 ) 99.95 Tb 0.05 material is about 300ppm, and the performance of the material has not been significantly improved.

最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (6)

1. a kind of magnetostriction materials, it is characterised in that its composition is (Fe1-xGax)100-yREy, wherein 0.17≤x≤0.19, The one or more of 0.01≤y≤0.2, RE in Tb, La, Sm, Dy, Lu, Ho, Er and Tm;
It is<100>The monocrystal material of orientation;
Saturation magnetic field is 100~500Oe, and saturation magnetostriction constant is up to 300~1500ppm.
2. magnetostriction materials according to claim 1, it is characterised in that its composition is (Fe0.83Ga0.17)99.95Tb0.05、 (Fe0.83Ga0.17)99.95Sm0.05、(Fe0.83Ga0.17)99.95Dy0.05、(Fe0.83Ga0.17)99.95Ho0.05、(Fe0.83Ga0.17)99.95Er0.05、(Fe0.83Ga0.17)99.95Tm0.05、(Fe0.81Ga0.19)99.95Tb0.05、(Fe0.81Ga0.19)99.95Sm0.05、 (Fe0.81Ga0.19)99.95Dy0.05、(Fe0.81Ga0.19)99.95Ho0.05、(Fe0.81Ga0.19)99.95Er0.05、(Fe0.81Ga0.19)99.95Tm0.05、(Fe0.83Ga0.17)99.97Lu0.03、(Fe0.81Ga0.19)99.96Dy0.04、(Fe0.82Ga0.18)99.98Sm0.02、 (Fe0.81Ga0.19)99.9Tm0.1、(Fe0.81Ga0.19)99.8La0.2、(Fe0.82Ga0.18)99.8(HoEr)0.2、(Fe0.83Ga0.17)99.84 (SmTm)0.16、(Fe0.82Ga0.18)99.85(HoErTm)0.15Or (Fe0.81Ga0.19)99.85(TbDyHo)0.15
3. the preparation method of any magnetostriction materials of claim 1 to 2, it is characterised in that comprise the following steps:
1) Fe, Ga and RE raw material are equipped with according to the component requirements of magnetostriction materials;
2) Fe, Ga and RE raw material of outfit are smelted into mother alloy ingot;
3) mother alloy ingot is melted, and foundry alloy rod is made by suction pouring;
4) by the foundry alloy rod and<100>The FeGa single crystal seeds of orientation are placed in apparatus for directional solidification, and make FeGa monocrystalline Coolant is immersed in seed crystal bottom, and after being vacuumized to apparatus for directional solidification and being filled with protective gas, heating makes foundry alloy rod completely molten Melt and FeGa single crystal seeds top melts, the material of melting is carried out along FeGa single crystal seeds bottom pull into coolant Directional solidification, and control the directional solidification thermograde be 1 × 105~9 × 105K/m, the speed of growth be 1000~ 20000mm/h, the magnetostriction materials are made;
In step 4), the foundry alloy rod and FeGa single crystal seeds top are placed in the inside of hollow graphite calandria, pass through sense Graphite heating body described in coil heats is answered, so that the melting completely of foundry alloy rod and the melting of FeGa single crystal seeds top;
In step 4), the heating includes implementing following operation at least once:
Graphite heating body is heated to 1550~1700 DEG C with 30~40 DEG C/min programming rate, treats that foundry alloy rod and FeGa are mono- 5~15min is incubated after the melting of grain of crystallization crystalline substance top, is then cooled to graphite heating body with 20~30 DEG C/min cooling rate 1450~1550 DEG C and 3~8min is incubated, then graphite heating body is heated to 1550 with 30~40 DEG C/min programming rate~ 1700 DEG C and 5~15min of insulation;
In step 4), make FeGa single crystal seeds bottom immersion coolant and lower end in contact water-cooled metal part, the coolant are Ga-In alloys.
4. preparation method according to claim 3, it is characterised in that in step 4), vacuumized simultaneously to apparatus for directional solidification Being filled with protective gas includes implementing following operation at least once:
1.0 × 10 are evacuated to apparatus for directional solidification-3~5.0 × 10-3Protective gas is filled with after Pa, is treated in apparatus for directional solidification Vacuum rise to 1.0 × 10-1~5 × 10-1Stop inflation after Pa.
5. according to any described preparation method of claim 3 to 4, it is characterised in that step 2) includes:
Fe, Ga and RE raw material of outfit are placed in smelting equipment, 5.0 × 10 are evacuated to smelting equipment-2~5.0 × 10- 3Protective gas is filled with after Pa, treats that the vacuum in smelting equipment rises to 1.0 × 10-1~5.0 × 10-1Stop inflation after Pa, it is real After applying aforesaid operations at least once, under conditions of melting electric current is 100~150A melting raw material once more than, control molten every time The time of refining is 3~5 minutes, and mother alloy ingot is made.
6. according to any described preparation method of claim 3 to 4, it is characterised in that step 3) includes:
The mother alloy ingot is placed in smelting equipment, 1.0 × 10 are evacuated to smelting equipment-3~5.0 × 10-3Filled after Pa Enter protective gas, treat that the vacuum in smelting equipment rises to 1.0 × 10-1~5.0 × 10-1Stop inflation after Pa, in melting electricity Flow for the mother alloy ingot is fused into aluminium alloy under conditions of 100~300A, and aluminium alloy is inhaled into casting and is made into mould Foundry alloy rod.
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CN109023505B (en) * 2018-08-27 2019-04-09 北京航空航天大学 A method for regulating magnetic domains of FeGa magnetostrictive alloys by unidirectional solidification stress
JP2020035887A (en) * 2018-08-30 2020-03-05 パナソニックIpマネジメント株式会社 Magnetostrictive element and magnetostrictive vibration power generation device using the same
JP2020050920A (en) * 2018-09-27 2020-04-02 パナソニックIpマネジメント株式会社 Magnetostrictive element and method of manufacturing magnetostrictive element
JP7125711B2 (en) * 2018-09-27 2022-08-25 住友金属鉱山株式会社 Method for producing seed crystal for growing single crystal of iron-gallium alloy and method for growing single crystal of iron-gallium alloy
JP7318884B2 (en) * 2019-06-12 2023-08-01 住友金属鉱山株式会社 Single crystal growth method for iron-gallium alloy
JP7523248B2 (en) 2020-04-23 2024-07-26 パナソニックホールディングス株式会社 Magnetostrictive material and magnetostrictive device using same
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