CN104934844A - 拥有同相位高功率单波长半导体激光的新型超连续谱光源系统 - Google Patents

拥有同相位高功率单波长半导体激光的新型超连续谱光源系统 Download PDF

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CN104934844A
CN104934844A CN201510381191.5A CN201510381191A CN104934844A CN 104934844 A CN104934844 A CN 104934844A CN 201510381191 A CN201510381191 A CN 201510381191A CN 104934844 A CN104934844 A CN 104934844A
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杨惟佳
陈抗抗
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Wuhan Anyang Laser Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
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    • H01ELECTRIC ELEMENTS
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    • H01S5/00Semiconductor lasers
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar

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Abstract

拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,包括同源多路时钟,超连续谱光源和多个单波长半导体激光器,各个单波长半导体激光器的频率通过同源多路时钟调节为超连续谱光源的频率的整数倍或整除倍。本发明通过增加单波长半导体激光来弥补传统超连续谱光源难以覆盖400nm以下波长以及在400-2400nm处单波长功率密度小于10mW/nm的弱点,所加的单波长半导体激光器波长可以覆盖375nm-2400nm,最高单波长功率密度可以到200mW/nm,使之组成的新型超连续谱光源适用于375-400nm范围内的光谱显微等领域应用。此外通过对单波长半导体激光器和传统超连续谱光源的脉冲产生电路的时钟控制,可以使单波长半导体激光与传统超连续谱光源保持同相位输出,并且相对的脉冲延时灵活可调。

Description

拥有同相位高功率单波长半导体激光的新型超连续谱光源系统
技术领域
本发明涉及超连续谱光源系统领域,特别涉及一种拥有同相位高功率单波长半导体激光的新型超连续谱光源系统。
背景技术
超连续谱是指短脉冲通过非线性介质时,由于一系列非线性效应与光纤的群速度色散的共同作用而使脉冲频谱展宽的一种现象。超连续谱光源由于输出光谱范围大、稳定性好、重复频率高接近于准连续等特点,使其在光学相干成像、光学显微成像,光学仪器测试、光纤陀螺、超短脉冲产生以及材料光谱学、环境测量、光纤传感、光计量学、激光光谱学、生物医学及光学采样等很多领域拥有重要的应用价值。
目前光纤激光器的迅速发展为超连续谱的产生提供了更多选择,例如公开号为CN202487963 U的中国实用新型专利《一种超连续谱光纤激光器》提供一种超连续谱光纤激光器,它是由1064nm半导体激光器直接作为种子源,然后通过脉冲发生器进行脉冲调制得到1064nm的皮秒激光器,该1064nm的皮秒种子源通过多级光纤放大器,得到高功率1064nm的皮秒激光器,最后高功率的皮秒激光器通过和光子晶体光纤的熔接,光谱不断向1064nm两端延伸,得到400-2200nm宽的超连续谱光源,其输出具有光谱宽、功率高、单模、重复频率可调等特点。该传统超连续谱光纤激光器存在的主要问题是很难覆盖400nm以下的紫外光谱范围,不能满足大量需要紫外光谱成分的测量需求。并且它的单波长的功率密度不够,一般小于10mW/nm,使它在需要紫外光谱的领域,例如紫外光谱激发的荧光光谱成像等领域和需要单点功率密度>50mW/nm的领域,如流式细胞仪或者高速超分辨光学成像等领域受到了限制。
发明内容
本发明要解决的技术问题是,针对现有技术存在的上述不足,提供一种拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,能够同时实现覆盖400nm以下的光,解决超连续谱单点功率存在的不足,实现所有输出端的脉冲在时域上可调。
本发明为解决上述技术问题所采用的技术方案是:
拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,包括同源多路时钟、超连续谱光源和多个单波长半导体激光器,所述各个单波长半导体激光器的频率通过同源多路时钟调节为超连续谱光源的频率的整数倍或整除倍。
按上述方案,所述同源多路时钟由时钟、同频同相位模块以及多个延时和倍频/差频模块构成。
按上述方案,所述超连续谱光源包括依次连接的脉冲发生器、半导体激光器、一级光纤放大器、二级光纤放大器、三级光纤放大器、PCF光子晶体光纤。
本发明的工作原理:同源多路时钟用于控制各个单波长半导体激光器的频率和相位,单波长半导体激光器用于拓宽超连续谱光源的波段以及单点光功率,使用单波长半导体激光器来弥补超连续谱光源中没有覆盖的波段并且补充超连续谱光源中单点功率的不足,同源多路时钟让所有单波长半导体激光器输出端的脉冲在时域上可调。
本发明与现有技术相比具有以下有益效果:
1、通过增加单波长半导体激光来弥补传统超连续谱光源难以覆盖400nm以下波长以及在400-2400nm处单波长功率密度小于10mW/nm的弱点,所加的单波长半导体激光器波长可以覆盖375nm-2400nm,最高单波长功率密度可以到200mW/nm,使之组成的新型超连续谱光源适用于375-400nm范围内的光谱显微等领域应用,并且更适合于需要高功率密度的共聚焦显微,超分辨光学成像以及流式细胞仪等领域应用;
2、通过对单波长半导体激光器和传统超连续谱光源的脉冲产生电路的时钟控制,可以使单波长半导体激光与传统超连续谱光源保持同相位输出,并且相对的脉冲延时灵活可调,同相位脉冲延时可控的混合型超连续谱光源可以满足超分辨显微技术以及与时间分辨相关的瞬态光谱,显微等领域的应用。
附图说明
图1为本发明新型超连续谱光源系统的结构示意图;
图2为图1中超连续谱光源的结构图;
图3为传统超连续谱光源的光谱图;
图4为本发明新型超连续谱光源系统弥补375nm处波长空白图;
图5为本发明新型超连续谱光源系统提高780nm波长处功率密度图;
图6为本发明新型超连续谱光源系统各输出端输出的脉冲图。
图中:1、同源多路时钟,11、时钟,12、同频同相位模块,13、延时和倍频/差频模块,2、超连续谱光源SC,21、脉冲发生器,22、半导体激光器,23、一级光纤放大器,24、二级光纤放大器,25、三级光纤放大器,26、PCF光子晶体光纤,3、单波长半导体激光器,31、375nm-70mW的单波长半导体激光器,32、780nm-7mW的单波长半导体激光器。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。
参照图1~图2所示,本发明所述的拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,包括同源多路时钟1、超连续谱光源2和多个单波长半导体激光器3,所述各个单波长半导体激光器3的频率f1~fn通过同源多路时钟1调节为超连续谱光源2的频率f0的整数倍或整除倍。
所述同源多路时钟1由时钟11、同频同相位模块12以及多个延时和倍频/差频模块13构成。
所述超连续谱光源2包括依次连接的脉冲发生器21、半导体激光器22、一级光纤放大器23、二级光纤放大器24、三级光纤放大器25、PCF光子晶体光纤26。
本发明的核心在于使用单波长半导体激光器3来弥补超连续谱光源2中没有覆盖的波段并且补充超连续谱光源2中单点功率的不足,同源多路时钟1让所有单波长半导体激光器3输出端的脉冲在时域上可调。
实施例1:
如图1所示,本发明的一种拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,包括同源多路时钟1,超连续谱光源2,375nm-6mW的单波长半导体激光器31(LD1),此种新型超连续谱光源系统输出光谱图如图4所示,对比图3和图4可知,本发明新型超连续谱光源系统弥补375nm处波长空白。
实施例2:
如图1所示,本发明的一种拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,包括同源多路时钟1,超连续谱光源2,780nm-7mW的单波长半导体激光器32(LD1)。此种新型超连续谱光源系统输出光谱图如图5所示,对比图3和图5可知,本发明新型超连续谱光源系统提高了780nm波长处的功率密度。
实施例3:
如图1所示,本发明的一种拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,包括同源多路时钟1,超连续谱光源2,375nm-70mW的单波长半导体激光器31(LD1),780nm-250mW的单波长半导体激光器32(LD2)。可通过同源多路时钟1中的各个延时和倍频/差频模块13来控制单波长半导体激光器LD1的频率f1、单波长半导体激光器LD2的频率f2以及相位,如图6所示,此种新型超连续谱光源系统各输出端输出的脉冲为同相位,且f1=1/2f0,f2=2f0,可根据应用需求调节。
本发明并不仅仅限于说明书和实施方式中所列运用,对于本领域的技术人员来说,可根据本发明作出各种相应的更改和变型,而所有这些相应的更改和变型都属于本发明权利要求的保护范围。

Claims (3)

1.拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,其特征在于:包括同源多路时钟、超连续谱光源和多个单波长半导体激光器,所述各个单波长半导体激光器的频率通过同源多路时钟调节为超连续谱光源的频率的整数倍或整除倍。
2.如权利要求1所述的拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,其特征在于:所述同源多路时钟由时钟、同频同相位模块以及多个延时和倍频/差频模块构成。
3.如权利要求1所述的拥有同相位高功率单波长半导体激光的新型超连续谱光源系统,其特征在于:所述超连续谱光源包括依次连接的脉冲发生器、半导体激光器、一级光纤放大器、二级光纤放大器、三级光纤放大器、PCF光子晶体光纤。
CN201510381191.5A 2015-07-02 2015-07-02 拥有同相位高功率单波长半导体激光的新型超连续谱光源系统 Pending CN104934844A (zh)

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US15/740,812 US10277000B2 (en) 2015-07-02 2016-06-17 Broadband light source composed of supercontinuum light source and single-wavelength semiconductor laser diodes
PCT/CN2016/086246 WO2017000799A1 (zh) 2015-07-02 2016-06-17 拥有同相位高功率单波长半导体激光的新型超连续谱光源系统

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