CN104923561A - Rolling method for metal substrate for LED - Google Patents
Rolling method for metal substrate for LED Download PDFInfo
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- CN104923561A CN104923561A CN201410105621.6A CN201410105621A CN104923561A CN 104923561 A CN104923561 A CN 104923561A CN 201410105621 A CN201410105621 A CN 201410105621A CN 104923561 A CN104923561 A CN 104923561A
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- metal substrate
- rolling
- deformation quantity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/38—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling sheets of limited length, e.g. folded sheets, superimposed sheets, pack rolling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/38—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling sheets of limited length, e.g. folded sheets, superimposed sheets, pack rolling
- B21B2001/386—Plates
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metal Rolling (AREA)
Abstract
The invention relates to the technical field of pressure machining, and discloses a rolling method for a metal substrate for an LED. The method is used for carrying out cold rolling or warm rolling of a metal substrate blank for many times under indoor temperature or the temperature from 50 degrees to 200 degrees. The method is characterized in that the method comprises the following steps: S1, carrying out the rolling of the metal substrate blank in one direction, and generating a first deformation value; S2, changing the rolling direction of the metal substrate, i.e., enabling the metal substrate blank to rotate by 90 degrees, carrying out rolling in a direction perpendicular to the direction in step 1, and generating a second deformation value, wherein the second deformation value and the first deformation value are consistent with each other; S3, carrying out the annealing of the metal substrate blank when the first and second deformation values do not reach needed thickness, and repeatedly carrying out the steps S1 and S2 till the needed thickness is reached. The method enables the deviation of the overall thickness to be reduced, improves the uniformity of surface smoothness of a product, improves the grain uniformity of the product, improves the machining efficiency, reduces the energy consumption of a single product, saves the cost, and meets the demands of LED chip scale package.
Description
Technical field
The present invention relates to pressure processing technology field, particularly relate to a kind of milling method of LED metal substrate.
Background technology
LED(English Light Emitting Diode by name, Chinese light emitting diode by name) current conversion can be light by semiconductor layer in lamp chip, semiconductor layer is adulterated by electronic area and N-type and void area and the doping of P type form, electric current passes through semiconductor layer, electronics is combined with hole, sends light with form of photons.Dump energy discharges with heat radiation form, temperature can reach 85 DEG C or higher, existing base substrate is owing to being sapphire or silicon chip composition, the heat dissipation problem of substrate is LED life-span less the biggest factor, and improve constantly along with to the requirement of brightness, can be increasing to the demand of heat radiation, because it all has with being representative with sapphire, silicon chip, substrate has identical or close thermal coefficient of expansion to the metal materials such as tungsten copper, molybdenum copper, pure molybdenum, thus this material is using as the desirable alternative materials of substrate or ideal complement material.
But traditional fabrication mode tungsten copper out, molybdenum copper, pure molybdenums etc. have crystal grain threadiness as its processing mode of refractory metal of encapsulation, surface roughness is uneven, integral thickness deviation is larger etc. cause there is thermal conductivity as substrate application, the material key propertys such as conductance exists the performance of forced people's will, and traditional approach makes tungsten copper, molybdenum copper ultra thin plate, as adopted infiltration method, hot isostatic pressing method, lqiuid phase sintering method etc., wherein, infiltration method is first pre-burning W skeleton, then by copper by carrying out liquid-phase sintering in atmosphere protection stove, by the effect infiltration of capillary force in exoskeletal, the method is applicable to the tungsten-copper alloy making 2mm and above thickness, it also easily produces closed pore, easily cause copper solidifying phase thick and skewness.Hot isostatic pressing method is higher to equipment requirement owing to existing, and the problems such as equipment operating cost is higher, cannot realize the production that bulk thickness is below 0.5mm.Lqiuid phase sintering method itself is difficult to reach the higher material of density, density is improved by ways such as follow-up forge hot, hot rollings, but a large amount of productions that relatively large thickness is below 0.2mm cannot be realized, and integral thickness deviation is poor, cannot meet the requirement of LED wafer-level package.
Summary of the invention
The problems such as the metal substrate processing mode that the technical problem to be solved in the present invention is the same sapphire of prior art, silicon wafer substrate has identical or close thermal coefficient of expansion has crystal grain threadiness, surface roughness is uneven, integral thickness deviation is larger.
In order to solve the problems of the technologies described above, the invention provides a kind of milling method of LED metal substrate, under the cold rolling or warm-rolling of multi-pass is carried out at room temperature or 50 ~ 200 DEG C to metal substrate blank, comprise following steps:
S1, blank is first carried out to the rolling in a direction, produce the first deformation quantity;
S2, change the rolling direction of metal substrate, by blank half-twist, form the direction mutually orthogonal with step S1, be rolled, produce the second deformation quantity, the second deformation quantity and the first deformation quantity in the same size;
When S3, the first deformation quantity and the second deformation quantity do not reach the thickness of needs, blank is annealed, repeat step S1 to S2, until be rolling to the thickness of needs.
Wherein, the material of described metal substrate is tungsten-copper alloy, molybdenum-copper or pure molybdenum.
Wherein, described metal substrate sotck thinkness is at 0.1 ~ 1.5mm.
Wherein, roll Rockwell hardness is more than 50, and during rolling, roll rotational speed is not more than 60r/min.
Wherein, nip pressure is not more than 60T.
Wherein, anneal and to carry out in the hydrogen of 600 ~ 1100 DEG C or vacuum drying oven.
Technique scheme tool of the present invention has the following advantages: the milling method of LED metal substrate provided by the present invention is by being rolled to required thickness from a direction by changing 90 degree after roll-in to certain deformation quantity, guarantee that vertical direction deformation quantity is in the same size, thus integral thickness deviation is reduced, the uniformity of improving product surface smoothness, improving product grain uniformity, effectively can avoid the tonsillotome grainiess of conventional production method, the circle structure from the tonsillotome shape of unidirection rolling to class, improve working (machining) efficiency, reduce single product energy consumption, save cost, meet LED core chip level package requirements.
Accompanying drawing explanation
Fig. 1 is the FB(flow block) of the milling method of embodiment of the present invention LED metal substrate.
Detailed description of the invention
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
The milling method of a kind of LED metal substrate provided by the invention, at room temperature or 50 ~ 200 DEG C, carry out the cold rolling or warm-rolling of multi-pass to metal substrate blank, room temperature is 25 DEG C ± 5 DEG C, comprises following steps:
S1, blank is first carried out to the rolling in a direction, produce the first deformation quantity;
S2, change the rolling direction of metal substrate, by blank half-twist, form the direction mutually orthogonal with step S1, be rolled, produce the second deformation quantity, the second deformation quantity and the first deformation quantity in the same size;
When S3, metal substrate do not reach the thickness of needs, blank is annealed, repeat step S1 to S2, until be rolling to the thickness of needs.
The tissue of threadiness or tonsillotome shape is obtained along a direction rolling, integral thickness deviation is minimum is 0.01mm, even if use convex rolling system, also the phenomenon avoiding integral thickness deviation larger is difficult to, the demand of LED wafer-level package cannot be met, comparatively forced for a deformation quantity, be difficult to the level reaching needs, so realized by tandem rolling, only need to ensure that deformation quantity can reach balanced, such as sotck thinkness is 0.8mm, wish to get the baseplate material of 0.5mm thickness, 0.65mm can be rolling to along a direction, change 90 ° to continue to be rolling to 0.5mm, obtain the substrate sheet material of required 0.5mm, tandem rolling improves product thickness uniformity, integral thickness deviation is decreased to 0.006mm from 0.01mm by method provided by the invention, improve the uniformity of product surface fineness, such as from surface smoothness Ra90 °, measure difference 0.06um and be promoted to difference 0.04um, improve product grains uniformity, effectively can avoid the tonsillotome grainiess of conventional production method, the circle structure from the tonsillotome shape of unidirection rolling to class, improve working (machining) efficiency, reduce single product energy consumption, save cost, meet LED core chip level package requirements.
The material of metal substrate is tungsten-copper alloy, molybdenum-copper or pure molybdenum, and in tungsten-copper alloy, the mass percent of tungsten is 40% ~ 97%, and in molybdenum-copper, the mass percent of molybdenum is 40% ~ 97%, and in pure molybdenum, the mass percent of molybdenum is more than 99.9%; First during rolling, tungsten copper alloy blank first deformation quantity is 5% ~ 20%, successively reduce later, cold rolling total deformation quantity controls below 50%, rolling can be continued after annealing, pure molybdenum thickness deformation quantity when 0.5 ~ 1.5mm controls within 40%, and pure molybdenum thickness deformation quantity when 0.2 ~ 0.5mm controls within 70%, and pure molybdenum thickness deformation quantity when being less than 0.2mm does not control.
Embodiment 1, be that to be rolling to thickness be 0.2mm for the metal substrate blank of 0.8mm by thickness, the Rockwell hardness of roll is 57, rotating speed is 30r/min, draught pressure is 30T to the maximum, the metal substrate of 0.8mm is rolling to 0.5mm along a direction, the metal substrate two being rolled into 0.5mm is sheared neat, changes 90 ° of directions, then be rolling to 0.2mm thickness.
Embodiment 2, be that to be rolling to thickness be 0.04mm for the metal substrate blank of 0.1mm by thickness, the Rockwell hardness of roll is 60, rotating speed is 50r/min, draught pressure is 60T to the maximum, the metal substrate of 0.1mm is rolling to 0.07mm along a direction, the metal substrate two being rolled into 0.07mm is sheared neat, changes 90 ° of directions, then be rolling to 0.04mm thickness.
Embodiment 3, be that to be rolling to thickness be 0.8mm for the metal substrate blank of 1.5mm by thickness, the Rockwell hardness of roll is 62, rotating speed is 55r/min, draught pressure is 40T to the maximum, the metal substrate of 1.5mm is rolling to 1.35mm along a direction, the metal substrate two being rolled into 1.35mm is sheared neat, change 90 ° of directions, be rolling to 1.2mm thickness again, total deformation quantity 0.3mm of the first deformation quantity 0.15mm and the second deformation quantity 0.15mm does not reach the thickness 0.8mm of needs, carry out annealing to metal stock in the hydrogen of 600 ~ 1100 DEG C or vacuum drying oven, the metal substrate of 1.2mm is rolling to 1mm along a direction, the metal substrate two being rolled into 1mm is sheared neat, change 90 ° of directions, be rolling to 0.8mm thickness again.
As shown in Figure 1, the milling method of LED metal substrate of the present invention, cold rolling or the warm-rolling of multi-pass is carried out at room temperature or 50 ~ 200 DEG C to metal substrate blank, blank is first carried out to the rolling in a direction, produce the first deformation quantity, change the rolling direction of metal substrate, by blank half-twist, form the direction mutually orthogonal with step S1, be rolled, produce the second deformation quantity, second deformation quantity and the first deformation quantity in the same size, when metal substrate does not reach the thickness of needs, blank is annealed, repeat said method, until be rolling to the thickness of needs, the size of crystal grain is controlled with this, the similar round shape of tandem rolling is converted to from the tonsillotome shape of unidirection rolling, to reach best conduction, heat-conducting effect.
In sum, the milling method of LED metal substrate provided by the present invention is by being rolled to required thickness from a direction by changing 90 degree after roll-in to certain deformation quantity, guarantee that vertical direction deformation quantity is in the same size, thus integral thickness deviation is reduced, the uniformity of improving product surface smoothness, improving product grain uniformity, effectively can avoid the tonsillotome grainiess of conventional production method, the circle structure from the tonsillotome shape of unidirection rolling to class, improve working (machining) efficiency, reduce single product energy consumption, save cost, meet LED core chip level package requirements.
Above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (6)
1. a milling method for LED metal substrate, carries out the cold rolling or warm-rolling of multi-pass to metal substrate blank, it is characterized in that comprising following steps at room temperature or 50 ~ 200 DEG C:
S1, blank is first carried out to the rolling in a direction, produce the first deformation quantity;
S2, change the rolling direction of metal substrate, by blank half-twist, form the direction mutually orthogonal with step S1, be rolled, produce the second deformation quantity, the second deformation quantity and the first deformation quantity in the same size;
When S3, the first deformation quantity and the second deformation quantity do not reach the thickness of needs, blank is annealed, repeat step S1 to S2, until be rolling to the thickness of needs.
2. the milling method of LED metal substrate according to claim 1, is characterized in that: the material of described metal substrate is tungsten-copper alloy, molybdenum-copper or pure molybdenum.
3. the milling method of LED metal substrate according to claim 1, is characterized in that: described metal substrate sotck thinkness is at 0.1 ~ 1.5mm.
4. the milling method of LED metal substrate according to claim 1, is characterized in that: roll Rockwell hardness is more than 50, and during rolling, roll rotational speed is not more than 60r/min.
5. the milling method of LED metal substrate according to claim 1, is characterized in that: nip pressure is not more than 60T.
6. the milling method of LED metal substrate according to claim 1, is characterized in that: anneal and to carry out in the hydrogen of 600 ~ 1100 DEG C or vacuum drying oven.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105621.6A CN104923561A (en) | 2014-03-20 | 2014-03-20 | Rolling method for metal substrate for LED |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410105621.6A CN104923561A (en) | 2014-03-20 | 2014-03-20 | Rolling method for metal substrate for LED |
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| CN104923561A true CN104923561A (en) | 2015-09-23 |
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| CN201410105621.6A Pending CN104923561A (en) | 2014-03-20 | 2014-03-20 | Rolling method for metal substrate for LED |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107363093A (en) * | 2016-05-12 | 2017-11-21 | 鞍钢股份有限公司 | Thin-specification steel plate rolling method for improving shape of intermediate billet before rolling |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05212408A (en) * | 1992-02-05 | 1993-08-24 | Nippon Steel Corp | Production of thick plate with high efficiency |
| CN101862752A (en) * | 2010-05-18 | 2010-10-20 | 上海六晶金属科技有限公司 | Cold-rolling method of molybdenum-copper alloy thin plate |
| CN102489504A (en) * | 2011-12-06 | 2012-06-13 | 无锡乐普金属科技有限公司 | Cross rolling method for tungsten-copper alloy foil |
| CN102489508A (en) * | 2011-12-06 | 2012-06-13 | 无锡乐普金属科技有限公司 | Cross rolling method of molybdenum-copper alloy foil |
| CN102806229A (en) * | 2012-08-09 | 2012-12-05 | 上海瑞钼特金属新材料有限公司 | Low-temperature rolling method for preparing tungsten copper alloy foil |
| CN102873095A (en) * | 2012-10-22 | 2013-01-16 | 上海瑞钼特金属新材料有限公司 | Low-temperature rolling method for preparing molybdenum-copper alloy |
-
2014
- 2014-03-20 CN CN201410105621.6A patent/CN104923561A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05212408A (en) * | 1992-02-05 | 1993-08-24 | Nippon Steel Corp | Production of thick plate with high efficiency |
| CN101862752A (en) * | 2010-05-18 | 2010-10-20 | 上海六晶金属科技有限公司 | Cold-rolling method of molybdenum-copper alloy thin plate |
| CN102489504A (en) * | 2011-12-06 | 2012-06-13 | 无锡乐普金属科技有限公司 | Cross rolling method for tungsten-copper alloy foil |
| CN102489508A (en) * | 2011-12-06 | 2012-06-13 | 无锡乐普金属科技有限公司 | Cross rolling method of molybdenum-copper alloy foil |
| CN102806229A (en) * | 2012-08-09 | 2012-12-05 | 上海瑞钼特金属新材料有限公司 | Low-temperature rolling method for preparing tungsten copper alloy foil |
| CN102873095A (en) * | 2012-10-22 | 2013-01-16 | 上海瑞钼特金属新材料有限公司 | Low-temperature rolling method for preparing molybdenum-copper alloy |
Non-Patent Citations (1)
| Title |
|---|
| 娄花芬: "《铜及铜合金板带生产》", 31 December 2010 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107363093A (en) * | 2016-05-12 | 2017-11-21 | 鞍钢股份有限公司 | Thin-specification steel plate rolling method for improving shape of intermediate billet before rolling |
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Application publication date: 20150923 |