CN104917392A - Broad pulse trigger type high-power trigger boost circuit based on phase shift processing - Google Patents
Broad pulse trigger type high-power trigger boost circuit based on phase shift processing Download PDFInfo
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- CN104917392A CN104917392A CN201510307308.5A CN201510307308A CN104917392A CN 104917392 A CN104917392 A CN 104917392A CN 201510307308 A CN201510307308 A CN 201510307308A CN 104917392 A CN104917392 A CN 104917392A
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Abstract
The invention discloses a broad pulse trigger type high-power trigger boost circuit based on phase shift processing. The broad pulse trigger type high-power trigger boost circuit is composed of a rectifying and filtering circuit, a trigger circuit, a boost circuit, a phase shift processing circuit and a two-stage low-pass filtering and amplifying circuit, wherein the trigger circuit is connected with the rectifying and filtering circuit, the boost circuit is connected with the trigger circuit, the phase shift processing circuit is connected with the boost circuit, and the two-stage low-pass filtering and amplifying circuit is connected with the phase shift processing circuit. The broad pulse trigger type high-power trigger boost circuit is characterized in that a broad pulse trigger circuit is arranged between the boost circuit and the phase shift processing circuit. The broad pulse trigger type high-power trigger boost circuit adopts double trigger circuits for driving, thus the pulse trigger range of the broad pulse trigger type high-power trigger boost circuit can be broader, and the loading capacity of the broad pulse trigger type high-power trigger boost circuit can be improved.
Description
Technical field
The present invention relates to a kind of booster circuit, specifically refer to the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process.
Background technology
Along with improving constantly of people's living standard and electric equipment products performance, people are also more and more higher to the requirement triggering booster circuit.People more and more focus on production efficiency aborning, and a lot of production process all uses mechanization.But due to the design level of traditional triggering booster circuit not high, the demand of some high-power production equipments can not be met, thus have influence on production efficiency.The power that the output how enabling circuit stable is larger is that people are badly in need of solving.
Summary of the invention
The object of the invention is to overcome the defect that conventional trigger booster circuit can not meet some high-power production equipment demands, provide a kind of broad pulse trigger-type based on phase shift process high-power triggering booster circuit.
Object of the present invention is achieved through the following technical solutions: the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process, its circuits for triggering be connected with this current rectifying and wave filtering circuit by current rectifying and wave filtering circuit, the booster circuit be connected with circuits for triggering, the phase shift treatment circuit be connected with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with phase shift treatment circuit, and be arranged on the broad pulse circuits for triggering composition between booster circuit and phase shift treatment circuit.
Further, described broad pulse circuits for triggering are by triode VT7, triode VT8, unidirectional thyristor D9, field effect transistor MOS1, N pole is connected with the emitter of triode VT7 after diode D8 through diode D7 in turn, P pole is then in turn through voltage stabilizing didoe D5 that diode D6 is connected with the collector electrode of triode VT7 after resistance R21, one end is connected with the N pole of voltage stabilizing didoe D5, the potentiometer R19 that the other end is then connected with the P pole of voltage stabilizing didoe D5 after resistance R20, negative pole is connected with the P pole of voltage stabilizing didoe D5 and booster circuit respectively, the polar capacitor C17 that positive pole is then connected with the grid of field effect transistor MOS1, one end is connected with the base stage of triode VT7, the resistance R22 of the other end then ground connection, one end is connected with the source electrode of field effect transistor MOS1, the resistance R23 that the other end is then connected with the N pole of unidirectional thyristor D9, and one end is connected with the P pole of unidirectional thyristor D9, the resistance R24 that the other end is then connected with phase shift treatment circuit forms, the grid of described field effect transistor MOS1 is respectively with the positive pole of polar capacitor C17 and the collector electrode of triode VT7 is connected, its its source electrode that is then connected with the base stage of triode VT7 of draining then is connected with the control pole of unidirectional thyristor D9, the base stage of described triode VT8 is connected with the P pole of voltage stabilizing didoe D5, its collector electrode is then connected with the grid of field effect transistor MOS1, its grounded emitter, the sliding end of described potentiometer R19 is then connected with the N pole of voltage stabilizing didoe D5.
Described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT3, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R10 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R11, the polar capacitor C10 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R9, the polar capacitor C8 that negative pole is connected with the collector electrode of triode VT3, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C9 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the potentiometer R8 that the other end is connected with the collector electrode of triode VT4, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D3 that N pole is connected with the base stage of triode VT3, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D4 that N pole is connected with the emitter of triode VT4 forms, the VCC+ pin of described phase shift chip U1 is connected with booster circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R8, the emitter of triode VT3 is connected with the base stage of triode VT4, the collector electrode of triode VT4 is connected with the P pole of unidirectional thyristor D9 after resistance R24, and the negative pole of electric capacity C10 is connected with two-stage low-pass filtering amplifying circuit.
Described current rectifying and wave filtering circuit is made up of rectification circuit and filter circuit.Described rectification circuit comprises: bridge rectifier U, fuse FU, resistance R1, and polar capacitor C1; Fuse FU and resistance R1 are serially connected in that two inputs of bridge rectifier U are extremely gone up, its cathode output end ground connection, cathode output end after polar capacitor C1 are then connected with filter circuit input respectively.
Described filter circuit is by triode VT1, the diode D1 that P pole is connected with the collector electrode of triode VT1 after resistance R3, N pole is connected with cathode output end and the circuits for triggering of bridge rectifier U simultaneously, the resistance R2 that one end is connected with the N pole of diode D1, the other end is connected with the collector electrode of triode VT1, the inductance L 1 that one end is connected with the base stage of triode VT1, the other end is connected with circuits for triggering, and while positive pole is connected with the emitter of triode VT1, negative pole is connected with circuits for triggering, the polar capacitor C2 of ground connection forms.
Described circuits for triggering comprise: resistance R4, resistance R5, triode VT2, flip chip K, polar capacitor C4, resistance R6; The base stage of described triode VT2 is connected with the N pole of diode D1 after resistance R4, collector electrode after resistance R5 simultaneously with the N pole of diode D1 and booster circuit is connected, emitter is connected with the VCC1 pin of flip chip K, the base stage of triode VT2 is connected with the RST pin of flip chip K, the negative pole of polar capacitor C4 after resistance R6 respectively with the SCLK pin of flip chip K with X2 pin is connected, positive pole is connected with the I/O pin of flip chip K; The X1 pin of described flip chip K is connected with the negative pole of polar capacitor C2, VCC2 pin is connected with booster circuit, and the negative pole of polar capacitor C4 is also connected with booster circuit; The base stage of described triode VT2 is also connected with the base stage of triode VT1 after inductance L 1.
Described booster circuit, by transformer T1, is arranged on the former limit circuit on the former limit of transformer T1, and is arranged on the secondary circuit composition of transformer T1 secondary; Described secondary circuit is by the inductance coil L4 being arranged on transformer T1 secondary, one end is connected with the non-same polarity of this inductance coil L4, the other end resistance R7 of ground connection after polar capacitor C5 and polar capacitor C6 and polar capacitor C7 in turn, and the composition of the thyristor D2 that P pole is connected with the non-same polarity of inductance coil L4, N pole is connected with the tie point of polar capacitor C6 with polar capacitor C5; The Same Name of Ends of described inductance coil L4 is then connected with the tie point of polar capacitor C6 with C7; The VCC+ pin of phase shift chip U1 is then connected with the Same Name of Ends of inductance coil L4; The N pole of described thyristor D2 is also connected with the negative pole of polar capacitor C17.
Described former limit circuit is then by the inductance coil L2 and the inductance coil L3 that are serially connected in the former limit of transformer T1, and the polar capacitor C3 be serially connected between inductance coil L2 Same Name of Ends and non-same polarity forms; The Same Name of Ends of described inductance coil L3 is connected with the non-same polarity of inductance coil L2 with the VCC2 pin of flip chip K respectively, and its non-same polarity is then connected with the negative pole of polar capacitor C4, and the Same Name of Ends of inductance coil L2 is then connected with the N pole of diode D1.
Described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, triode VT5, triode VT6, positive pole is connected with the negative pole of electric capacity C10, the polar capacitor C11 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R12 that the other end is connected with the positive pole of electric capacity C11, positive pole is connected with amplifier P1 inverting input after resistance R13, the polar capacitor C12 that negative pole is connected with the negative pole of polar capacitor C11, negative pole is connected with the output of amplifier P1, the electric capacity C13 that positive pole is connected with the inverting input of amplifier P1, negative pole is connected with the output of amplifier P1, the polar capacitor C14 that positive pole is connected with the base stage of triode VT5, one end is connected with the collector electrode of triode VT5, the resistance R14 that the other end is connected with the emitter of triode VT6, positive pole is connected with the base stage of triode VT6 after resistance R15, the polar capacitor C15 of ground connection while negative pole is connected with the negative pole of polar capacitor C13, one end is connected with the positive pole of polar capacitor C15, the resistance R16 that the other end is connected with the inverting input of amplifier P2, the resistance R17 be in parallel with resistance R16, be serially connected in the polar capacitor C16 between the output of amplifier P2 and inverting input, and the resistance R18 be serially connected between the normal phase input end of amplifier P2 and output forms, the emitter of described triode VT5 is connected with the negative pole of polar capacitor C13, and the collector electrode of triode VT6 is connected with the normal phase input end of amplifier P2.
In order to reach better result of use, described phase shift chip U1 is preferably LM741 integrated chip, and described flip chip K is then preferably DS1302 integrated chip and realizes.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) the present invention adopts phase shift treatment circuit, and it can allow circuit can also ensure high stability exporting powerful while.
(2) circuit electric energy loss of the present invention is little, saves use cost.
(3) the present invention adopts two circuits for triggering to drive, and pulse-triggered scope of the present invention then can be made thus wider, thus can improve load force of the present invention.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Fig. 2 is broad pulse trigger circuit structure schematic diagram of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the circuits for triggering that the present invention is connected with this current rectifying and wave filtering circuit by current rectifying and wave filtering circuit, the booster circuit be connected with circuits for triggering, the phase shift treatment circuit be connected with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with phase shift treatment circuit, and be arranged on the broad pulse circuits for triggering composition between booster circuit and phase shift treatment circuit.
Described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT3, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R10 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R11, the polar capacitor C10 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R9, the polar capacitor C8 that negative pole is connected with the collector electrode of triode VT3, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C9 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the potentiometer R8 that the other end is connected with the collector electrode of triode VT4, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D3 that N pole is connected with the base stage of triode VT3, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D4 that N pole is connected with the emitter of triode VT4 forms.
During enforcement, the VCC+ pin of described phase shift chip U1 is connected with booster circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R8, the emitter of triode VT3 is connected with the base stage of triode VT4, the collector electrode of triode VT4 is connected with broad pulse circuits for triggering, and the negative pole of electric capacity C10 is connected with two-stage low-pass filtering amplifying circuit.
The present invention adopts phase shift treatment circuit, and it can allow circuit can also ensure high stability exporting powerful while.In order to ensure implementation result, described phase shift chip U1 is preferably LM741 integrated chip to realize.
Described current rectifying and wave filtering circuit is made up of rectification circuit and filter circuit.Rectification circuit comprises bridge rectifier U, fuse FU, resistance R1, and polar capacitor C1.During connection, this fuse FU and resistance R1 are serially connected in that two inputs of bridge rectifier U are extremely gone up, its cathode output end ground connection, cathode output end after polar capacitor C1 are then connected with filter circuit input respectively.When input voltage is too high, this fuse FU then can fuse, thus can protect the present invention.
This filter circuit is then by triode VT1, the diode D1 that P pole is connected with the collector electrode of triode VT1 after resistance R3, N pole is connected with cathode output end and the circuits for triggering of bridge rectifier U simultaneously, the resistance R2 that one end is connected with the N pole of diode D1, the other end is connected with the collector electrode of triode VT1, the inductance L 1 that one end is connected with the base stage of triode VT1, the other end is connected with circuits for triggering, and while positive pole is connected with the emitter of triode VT1, negative pole is connected with circuits for triggering, the polar capacitor C2 of ground connection forms.
Described circuits for triggering comprise resistance R4, resistance R5, triode VT2, flip chip K, polar capacitor C4, resistance R6.During connection, the base stage of this triode VT2 need be connected with the N pole of diode D1 after resistance R4, collector electrode after resistance R5 simultaneously with the N pole of diode D1 and booster circuit is connected, emitter is connected with the VCC1 pin of flip chip K, the base stage of triode VT2 is connected with the RST pin of flip chip K, the negative pole of polar capacitor C4 after resistance R6 respectively with the SCLK pin of flip chip K with X2 pin is connected, positive pole is connected with the I/O pin of flip chip K.The X1 pin of described flip chip K is connected with the negative pole of polar capacitor C2, VCC2 pin is connected with booster circuit, and the negative pole of polar capacitor C4 is also connected with booster circuit.The base stage of described triode VT2 is also connected with the base stage of triode VT1 after inductance L 1.
Described booster circuit, by transformer T1, is arranged on the former limit circuit on the former limit of transformer T1, and is arranged on the secondary circuit composition of transformer T1 secondary.Described secondary circuit is by the inductance coil L4 being arranged on transformer T1 secondary, one end is connected with the non-same polarity of this inductance coil L4, the other end resistance R7 of ground connection after polar capacitor C5 and polar capacitor C6 and polar capacitor C7 in turn, and the composition of the thyristor D2 that P pole is connected with the non-same polarity of inductance coil L4, N pole is connected with the tie point of polar capacitor C6 with polar capacitor C5.The Same Name of Ends of described inductance coil L4 is then connected with the tie point of polar capacitor C6 with C7; The VCC+ pin of phase shift chip U1 is then connected with the Same Name of Ends of inductance coil L4.The N pole of this thyristor D2 also needs to be connected with broad pulse circuits for triggering.
This former limit circuit is then by the inductance coil L2 and the inductance coil L3 that are serially connected in the former limit of transformer T1, and the polar capacitor C3 be serially connected between inductance coil L2 Same Name of Ends and non-same polarity forms.
Wherein, the Same Name of Ends of this inductance coil L3 is connected with the non-same polarity of inductance coil L2 with the VCC2 pin of flip chip K respectively, its non-same polarity is then connected with the negative pole of polar capacitor C4, and the Same Name of Ends of inductance coil L2 is then connected with the N pole of diode D1.
Described two-stage low-pass filtering amplifying circuit comprises amplifier P1, amplifier P2, triode VT5, triode VT6, positive pole is connected with the negative pole of electric capacity C10, the polar capacitor C11 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R12 that the other end is connected with the positive pole of electric capacity C11, positive pole is connected with amplifier P1 inverting input after resistance R13, the polar capacitor C12 that negative pole is connected with the negative pole of polar capacitor C11, negative pole is connected with the output of amplifier P1, the electric capacity C13 that positive pole is connected with the inverting input of amplifier P1.
Simultaneously, in order to reach better filter effect, this two-stage low-pass filtering amplifying circuit is also provided with negative pole and is connected with the output of amplifier P1, the polar capacitor C14 that positive pole is connected with the base stage of triode VT5, one end is connected with the collector electrode of triode VT5, the resistance R14 that the other end is connected with the emitter of triode VT6, positive pole is connected with the base stage of triode VT6 after resistance R15, the polar capacitor C15 of ground connection while negative pole is connected with the negative pole of polar capacitor C13, one end is connected with the positive pole of polar capacitor C15, the resistance R16 that the other end is connected with the inverting input of amplifier P2, the resistance R17 be in parallel with resistance R16, be serially connected in the polar capacitor C16 between the output of amplifier P2 and inverting input, and the resistance R18 be serially connected between the normal phase input end of amplifier P2 and output.The emitter of described triode VT5 is connected with the negative pole of polar capacitor C13, and the collector electrode of triode VT6 is connected with the normal phase input end of amplifier P2.
These broad pulse circuits for triggering are then emphasis of the present invention, as shown in Figure 2, it comprises triode VT7, triode VT8, unidirectional thyristor D9, field effect transistor MOS1, N pole is connected with the emitter of triode VT7 after diode D8 through diode D7 in turn, P pole is then in turn through voltage stabilizing didoe D5 that diode D6 is connected with the collector electrode of triode VT7 after resistance R21, one end is connected with the N pole of voltage stabilizing didoe D5, the potentiometer R19 that the other end is then connected with the P pole of voltage stabilizing didoe D5 after resistance R20, negative pole is connected with the P pole of voltage stabilizing didoe D5 and the N pole of thyristor D2 respectively, the polar capacitor C17 that positive pole is then connected with the grid of field effect transistor MOS1.
Wider trigger impulse is had in order to make it, to improve load capacity of the present invention, these broad pulse circuits for triggering are also provided with that one end is connected with the base stage of triode VT7, the resistance R22 of the other end then ground connection, the resistance R23 that one end is connected with the source electrode of field effect transistor MOS1, the other end is then connected with the N pole of unidirectional thyristor D9, and the resistance R24 that one end is connected with the P pole of unidirectional thyristor D9, the other end is then connected with the collector electrode of triode VT4 forms.
During connection, the grid of this field effect transistor MOS1 is respectively with the positive pole of polar capacitor C17 and the collector electrode of triode VT7 is connected, its its source electrode that is then connected with the base stage of triode VT7 of draining then is connected with the control pole of unidirectional thyristor D9.The base stage of described triode VT8 is connected with the P pole of voltage stabilizing didoe D5, its collector electrode is then connected with the grid of field effect transistor MOS1, its grounded emitter.The sliding end of described potentiometer R19 is then connected with the N pole of voltage stabilizing didoe D5.
After voltage input is come in, voltage stabilizing didoe D5 carries out voltage stabilizing process to voltage, then is charged to polar capacitor C17 by potentiometer R19 and resistance R20.When the charging voltage on polar capacitor C17 not yet reaches the peak point voltage of field effect transistor MOS1, the base potential of this triode VT7 is higher, and at this moment triode VT7 ends.When the charging voltage on polar capacitor C17 reaches the peak point voltage of field effect transistor MOS1, at this moment field effect transistor MOS1 then conducting, the current potential simultaneously in triode VT7 base stage sharply declines, at this moment triode VT7 then conducting.Simultaneously, voltage is charged to polar capacitor C17 by diode D7 and diode D8 and triode VT7, the current potential on polar capacitor C17 is made to maintain on the peak point voltage of field effect transistor MOS1, until just turn off during voltage zero-cross, so then broaden trigger impulse, thus make load capacity of the present invention stronger.
As mentioned above, just the present invention can well be realized.
Claims (8)
1. the high-power triggering booster circuit of the broad pulse trigger-type based on phase shift process, its circuits for triggering be connected with this current rectifying and wave filtering circuit by current rectifying and wave filtering circuit, the booster circuit be connected with circuits for triggering, the phase shift treatment circuit be connected with booster circuit, and the two-stage low-pass filtering amplifying circuit to be connected with phase shift treatment circuit forms, and it is characterized in that: be also provided with broad pulse circuits for triggering between booster circuit and phase shift treatment circuit, described broad pulse circuits for triggering are by triode VT7, triode VT8, unidirectional thyristor D9, field effect transistor MOS1, N pole is connected with the emitter of triode VT7 after diode D8 through diode D7 in turn, P pole is then in turn through voltage stabilizing didoe D5 that diode D6 is connected with the collector electrode of triode VT7 after resistance R21, one end is connected with the N pole of voltage stabilizing didoe D5, the potentiometer R19 that the other end is then connected with the P pole of voltage stabilizing didoe D5 after resistance R20, negative pole is connected with the P pole of voltage stabilizing didoe D5 and booster circuit respectively, the polar capacitor C17 that positive pole is then connected with the grid of field effect transistor MOS1, one end is connected with the base stage of triode VT7, the resistance R22 of the other end then ground connection, one end is connected with the source electrode of field effect transistor MOS1, the resistance R23 that the other end is then connected with the N pole of unidirectional thyristor D9, and one end is connected with the P pole of unidirectional thyristor D9, the resistance R24 that the other end is then connected with phase shift treatment circuit forms, the grid of described field effect transistor MOS1 is respectively with the positive pole of polar capacitor C17 and the collector electrode of triode VT7 is connected, its its source electrode that is then connected with the base stage of triode VT7 of draining then is connected with the control pole of unidirectional thyristor D9, the base stage of described triode VT8 is connected with the P pole of voltage stabilizing didoe D5, its collector electrode is then connected with the grid of field effect transistor MOS1, its grounded emitter, the sliding end of described potentiometer R19 is then connected with the N pole of voltage stabilizing didoe D5.
2. the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process according to claim 1, it is characterized in that: described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT3, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R10 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R11, the polar capacitor C10 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R9, the polar capacitor C8 that negative pole is connected with the collector electrode of triode VT3, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C9 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the potentiometer R8 that the other end is connected with the collector electrode of triode VT4, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D3 that N pole is connected with the base stage of triode VT3, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D4 that N pole is connected with the emitter of triode VT4 forms, the VCC+ pin of described phase shift chip U1 is connected with booster circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R8, the emitter of triode VT3 is connected with the base stage of triode VT4, the collector electrode of triode VT4 is connected with the P pole of unidirectional thyristor D9 after resistance R24, and the negative pole of electric capacity C10 is connected with two-stage low-pass filtering amplifying circuit.
3. the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process according to claim 2, is characterized in that: described current rectifying and wave filtering circuit is made up of rectification circuit and filter circuit;
Described rectification circuit comprises: bridge rectifier U, fuse FU, resistance R1, and polar capacitor C1; Fuse FU and resistance R1 are serially connected in that two inputs of bridge rectifier U are extremely gone up, its cathode output end ground connection, cathode output end after polar capacitor C1 are then connected with filter circuit input respectively;
Described filter circuit is by triode VT1, the diode D1 that P pole is connected with the collector electrode of triode VT1 after resistance R3, N pole is connected with cathode output end and the circuits for triggering of bridge rectifier U simultaneously, the resistance R2 that one end is connected with the N pole of diode D1, the other end is connected with the collector electrode of triode VT1, the inductance L 1 that one end is connected with the base stage of triode VT1, the other end is connected with circuits for triggering, and while positive pole is connected with the emitter of triode VT1, negative pole is connected with circuits for triggering, the polar capacitor C2 of ground connection forms.
4. the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process according to claim 3, is characterized in that: described circuits for triggering comprise: resistance R4, resistance R5, triode VT2, flip chip K, polar capacitor C4, resistance R6; The base stage of described triode VT2 is connected with the N pole of diode D1 after resistance R4, collector electrode after resistance R5 simultaneously with the N pole of diode D1 and booster circuit is connected, emitter is connected with the VCC1 pin of flip chip K, the base stage of triode VT2 is connected with the RST pin of flip chip K, the negative pole of polar capacitor C4 after resistance R6 respectively with the SCLK pin of flip chip K with X2 pin is connected, positive pole is connected with the I/O pin of flip chip K; The X1 pin of described flip chip K is connected with the negative pole of polar capacitor C2, VCC2 pin is connected with booster circuit, and the negative pole of polar capacitor C4 is also connected with booster circuit; The base stage of described triode VT2 is also connected with the base stage of triode VT1 after inductance L 1.
5. the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process according to claim 4, it is characterized in that: described booster circuit is by transformer T1, be arranged on the former limit circuit on the former limit of transformer T1, and be arranged on the secondary circuit composition of transformer T1 secondary; Described secondary circuit is by the inductance coil L4 being arranged on transformer T1 secondary, one end is connected with the non-same polarity of this inductance coil L4, the other end resistance R7 of ground connection after polar capacitor C5 and polar capacitor C6 and polar capacitor C7 in turn, and the composition of the thyristor D2 that P pole is connected with the non-same polarity of inductance coil L4, N pole is connected with the tie point of polar capacitor C6 with polar capacitor C5; The Same Name of Ends of described inductance coil L4 is then connected with the tie point of polar capacitor C6 with C7; The VCC+ pin of phase shift chip U1 is then connected with the Same Name of Ends of inductance coil L4; The N pole of described thyristor D2 is also connected with the negative pole of polar capacitor C17;
Described former limit circuit is then by the inductance coil L2 and the inductance coil L3 that are serially connected in the former limit of transformer T1, and the polar capacitor C3 be serially connected between inductance coil L2 Same Name of Ends and non-same polarity forms; The Same Name of Ends of described inductance coil L3 is connected with the non-same polarity of inductance coil L2 with the VCC2 pin of flip chip K respectively, and its non-same polarity is then connected with the negative pole of polar capacitor C4, and the Same Name of Ends of inductance coil L2 is then connected with the N pole of diode D1.
6. the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process according to claim 5, it is characterized in that: described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, triode VT5, triode VT6, positive pole is connected with the negative pole of electric capacity C10, the polar capacitor C11 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R12 that the other end is connected with the positive pole of electric capacity C11, positive pole is connected with amplifier P1 inverting input after resistance R13, the polar capacitor C12 that negative pole is connected with the negative pole of polar capacitor C11, negative pole is connected with the output of amplifier P1, the electric capacity C13 that positive pole is connected with the inverting input of amplifier P1, negative pole is connected with the output of amplifier P1, the polar capacitor C14 that positive pole is connected with the base stage of triode VT5, one end is connected with the collector electrode of triode VT5, the resistance R14 that the other end is connected with the emitter of triode VT6, positive pole is connected with the base stage of triode VT6 after resistance R15, the polar capacitor C15 of ground connection while negative pole is connected with the negative pole of polar capacitor C13, one end is connected with the positive pole of polar capacitor C15, the resistance R16 that the other end is connected with the inverting input of amplifier P2, the resistance R17 be in parallel with resistance R16, be serially connected in the polar capacitor C16 between the output of amplifier P2 and inverting input, and the resistance R18 be serially connected between the normal phase input end of amplifier P2 and output forms, the emitter of described triode VT5 is connected with the negative pole of polar capacitor C13, and the collector electrode of triode VT6 is connected with the normal phase input end of amplifier P2.
7. the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process according to claim 6, is characterized in that: described phase shift chip U1 is LM741 integrated chip.
8. the high-power triggering booster circuit of a kind of broad pulse trigger-type based on phase shift process according to claim 6, is characterized in that: described flip chip K is DS1302 integrated chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510307308.5A CN104917392A (en) | 2014-11-26 | 2015-06-07 | Broad pulse trigger type high-power trigger boost circuit based on phase shift processing |
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| CN201410691821.4A CN104410301A (en) | 2014-11-26 | 2014-11-26 | High-power trigger booster circuit based on phase shifting |
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| CN201510307308.5A CN104917392A (en) | 2014-11-26 | 2015-06-07 | Broad pulse trigger type high-power trigger boost circuit based on phase shift processing |
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| CN201510307308.5A Pending CN104917392A (en) | 2014-11-26 | 2015-06-07 | Broad pulse trigger type high-power trigger boost circuit based on phase shift processing |
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| CN104467453A (en) * | 2014-11-22 | 2015-03-25 | 成都智利达科技有限公司 | Control system based on broadband triangular waves |
| CN104880229A (en) * | 2015-04-13 | 2015-09-02 | 成都诚邦动力测试仪器有限公司 | Low-pass filtering based engine fuel consumption detection system |
| CN104807514A (en) * | 2015-04-13 | 2015-07-29 | 成都诚邦动力测试仪器有限公司 | Two-stage low-pass filter and amplification type engine fuel consumption testing system |
| CN104848907A (en) * | 2015-04-13 | 2015-08-19 | 成都诚邦动力测试仪器有限公司 | Engine fuel consumption measuring system based on trigger booster circuit |
| CN104792381A (en) * | 2015-04-13 | 2015-07-22 | 成都诚邦动力测试仪器有限公司 | Phase shifting type engine oil consumption detecting system |
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| CN204316361U (en) * | 2014-11-26 | 2015-05-06 | 成都创图科技有限公司 | A kind of high-power triggering booster circuit based on phase shift process |
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| CN204316361U (en) * | 2014-11-26 | 2015-05-06 | 成都创图科技有限公司 | A kind of high-power triggering booster circuit based on phase shift process |
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| Title |
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| 方大千，郑鹏，朱征涛: "《晶闸管实用电路详解》", 30 April 2012 * |
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